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Hušeková, Kristína

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Publikácie za rok 2023:
  • DOBROČKA, Edmund – GUCMANN, Filip – HUŠEKOVÁ, Kristína – NÁDAŽDY, Peter – HRUBIŠÁK, Fedor – EGYENES, Fridrich – ROSOVÁ, Alica – MIKOLÁŠEK, M. – ŤAPAJNA, Milan**. Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD. In Materials, 2023, vol. 16, no. 20. (2022: 3.4 – IF, Q2 – JCR, 0.563 – SJR, Q2 – SJR). ISSN 1996-1944. Dostupné na: https://doi.org/10.3390/ma16010020 Typ: ADCA
  • EGYENES, Fridrich** – GUCMANN, Filip – ROSOVÁ, Alica – DOBROČKA, Edmund – HUŠEKOVÁ, Kristína – HRUBIŠÁK, Fedor – KESHTKAR, Javad – ŤAPAJNA, Milan. Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions. In Journal of Physics D: Applied Physics, 2023, vol. 56, no. 045102. (2022: 3.4 – IF, Q2 – JCR, 0.689 – SJR, Q1 – SJR). ISSN 0022-3727. Dostupné na: https://doi.org/10.1088/1361-6463/aca775 Typ: ADCA
  • GUCMANN, Filip** – NÁDAŽDY, Peter – HUŠEKOVÁ, Kristína – DOBROČKA, Edmund – PRIESOL, J. – EGYENES, Fridrich – ŠATKA, A. – ROSOVÁ, Alica – ŤAPAJNA, Milan. Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD. In Materials science in semiconductor processing, 2023, vol. 156, no. 107289. (2022: 4.1 – IF, Q2 – JCR, 0.688 – SJR, Q1 – SJR). ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2022.107289 Typ: ADCA
  • HRUBIŠÁK, Fedor – HUŠEKOVÁ, Kristína – ZHENG, X – ROSOVÁ, Alica – DOBROČKA, Edmund – ŤAPAJNA, Milan – MIČUŠÍK, Matej – NÁDAŽDY, Peter – EGYENES, Fridrich – KESHTKAR, Javad – KOVÁČOVÁ, Eva – POMEROY, J.W. – KUBALL, M. – GUCMANN, Filip. Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices : Special Collection: Gallium Oxide Materials and Devices. In Journal of Vacuum Science and Technology A, 2023, vol. 41, no. 042708. (2022: 2.9 – IF, Q2 – JCR, 0.55 – SJR, Q2 – SJR). ISSN 0734-2101. Dostupné na: https://doi.org/10.1116/6.0002649 (APVV 20-0220. VEGA 2/0100/21. DoktoGrant APP0424. ITMS2014+: 313021T081 : Vybudovanie Centra pre využitie pokročilých materiálov Slovenskej akadémie vied) Typ: ADCA
  • HRUBIŠÁK, Fedor** – HUŠEKOVÁ, Kristína – ZHENG, X – ROSOVÁ, Alica – DOBROČKA, Edmund – ŤAPAJNA, Milan – MIČUŠÍK, Matej – NÁDAŽDY, Peter – EGYENES, Fridrich – KESHTKAR, Javad – KOVÁČOVÁ, Eva – POMEROY, J.W. – KUBALL, M. – GUCMANN, Filip. Material properties of MOCVD-grown β- and κ-Ga2O3 thin films on 4H-SiC substrates. In Proceedings of ADEPT 2023 : 11th International Conference on Advances in Electronic and Photonic Technologies, held in Podbanské, High Tatras, Slovakia, June 12th – 15th, 2023. Eds. D. Jandura, I. Lettrichová, J. Kováč, jr. – Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2023, p. 87-90. ISBN 978-80-554-1977-0. (APVV 20-0220. VEGA 2/0100/21. DoktoGrant APP0424) Typ: AFD
  • ŤAPAJNA, Milan** – KESHTKAR, Javad – SZABÓ, O. – SHAGIEVA, E. – HUŠEKOVÁ, Kristína – DOBROČKA, Edmund – FEDOR, Ján – DÉRER, Ján – KROMKA, A. – GUCMANN, Filip. Growth of nanocrystalline diamond on gallium oxide using various interlayers. In Proceedings of ADEPT 2023 : 11th International Conference on Advances in Electronic and Photonic Technologies, held in Podbanské, High Tatras, Slovakia, June 12th – 15th, 2023. Eds. D. Jandura, I. Lettrichová, J. Kováč, jr. – Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2023, p. 28-31. ISBN 978-80-554-1977-0. (VEGA 2/0100/21. APVV 20-0220) Typ: AFD
  • YUAN, C. – MAO, Y. – MENG, Baozhong – YANG, Xiaojun – HRUBIŠÁK, Fedor – EGYENES, Fridrich – DOBROČKA, Edmund – HUŠEKOVÁ, Kristína – ROSOVÁ, Alica – ELIÁŠ, Peter – KESHTKAR, Javad – ŤAPAJNA, Milan – GUCMANN, Filip. Thermal properties of Ga2O3 films and interfaces grown by MOCVD. In Proceedings of ADEPT 2023 : 11th International Conference on Advances in Electronic and Photonic Technologies, held in Podbanské, High Tatras, Slovakia, June 12th – 15th, 2023. Eds. D. Jandura, I. Lettrichová, J. Kováč, jr. – Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2023, p. 36-39. ISBN 978-80-554-1977-0. (APVV 20-0220. VEGA 2/0100/21) Typ: AFD