Búran, M., Melišek, T., Kováč, P., and Kopera, L.: Multi-pulse current technique used for Ic and thermal stability assessment of HTS superconductors, Supercond. Sci Technol. 39 (2026) 025018. (APVV-18-15287, VEGA 2/0140/19)
Talipova, A.B., Buranych, V., Savitskaya, I.S., Abashidze, I., Malchik, F.I., Shokatayeva, D.H., Sahul, M., Rokosz, K., Čaplovičová, M., and Pogrebnjak, A.D.: Advanced biomaterials in tissue engineering based on antibacterial and antibiofilm nanocomposites for multidrug-resistant wound pathogens, ACS Omega 11 (2026) 14806-14820. (EU Next Generation EU RRP No. 09I03-03-V01-00026)
Chidambaram, J.R., Rosová, A., Dobročka, E., Švec, P.Jr., Hušeková, K., Kumar, S.,Ťapajna, M., and Gucmann, F.: Variation of surface morphology in (201) β-Ga2O3 epitaxial layers on c-plane sapphire substrates connected with {310}/(201) volume ratio. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 111-114. (EU Next Generation EU RRP No. 09I05-03-V02-00030, APVV-24-0325, SK-TW-RD-24-0006, VEGA 2/0156/25)
Chidambaram, R.J., Rosová, A., Dobročka, E., Švec, P., Hušeková, K., Ťapajna, M., and Gucmann, F.: Real rotational domain microstructure driven by pseudo symmetry of oxygen sublattice in heteroepitaxial of β-Ga2O3 layers. In: WOCSDICE-EXMATEC 2026: 49th Workshop on Compound Semicond. Dev. Integrated Circuits. Gdansk, 2026, p. 116-117. (EU Next Generation EU RRP No. 09I05-03-V02-00030, APVV-24-0325, VEGA 2/0156/25)
Egyenes, F., Moško, M., Chi, Z., Vincze, A., Hušeková, K., Dobročka, E., Rosová, A., Precner, M., Ondrejka, P., Chikoidze, E., Mikolášek, M., Mičušík, M., Ťapajna, M., and Gucmann, F.: Anomalous hopping regime at the Mott transition from disordered semiconductor to disordered metal in Si-doped Ga2O3, Phys. Rev. B 113 (2026) 195205.
Hornáčková, S., Pekarčíková, M., Frolek, L., Šouc, J., Necpal, J.M., Pašák, M., and Ferenčík, F.: Photolithographic fabrication of multifilamentary superconducting tapes with reduced AC losses for cable fabrication, IEEE Trans. Applied Supercond. 36 (2026) 6603305.
Gömöry, F., Šouc, J., Solovyov, M., Kucharovič, M., Pekarčíková, M., Landvogt, S., Bahl, C.R.H., and Wulff, A.C.: Coupling loss model for multifilamentary coated conductor tapes valid in wide range of frequencies, Superconductivity 18 (2026) 100258. (VEGA 2/0098/24, APVV-24-0061, EU Next Generation EU RRP No. 09I04-03-V04-00020)
Gregušová, D., Pohorelec, O., Ťapajna, M., Hrdá, J., Laurenčíková, A., Krajčovičová, T.E., Kozak, A., Stoklas, R., Hulman, M., Maťko, M., Vretenár, V., and Sojková, M.: Concept of electrical contacts for semiconductor devices based on 2D materials. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 47-50. (APVV-21-0278, APVV-21-0231)
Zdurienčík, M., Mrena, D., Gregušová, D., Laurenčíková, A., Hušeková, K., Dobročka, E., Zápražný, Z., Dérer, J., Gucmann, F., Goraus, M., Jandura, D., Benedikovič, D., Pikulíková, V., and Pudiš, D.: Diffraction gratings for gallium oxide photonic devices. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 151-154. (APVV-24-0325)
Zdurienčík, M., Gucmann, F., and Pudiš, D.: Preparation of microstructures for gallium oxide photonic devices, Transport. Research Procedia 93 (2026) 612-617. (APVV 20-0264)
Pikulíková, V., Pipíška, M., Petrovič, A., Zdurienčík, M., Holá, M., Litvík, J., Pudiš, D., Gucmann, F., and Benedikovič, D.: Optical waveguides and power splitters for gallium oxide photonic integrated circuits. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 245-248. (EU Next Generation EU RRP No. 09I05-03-V02-00030)
Hrdá, J., Vegso, K., Shaji, A., Nádaždy, P., Krajčovičová, T.E., Pribusová Slušná, L., Bernstorff, S., Jergel, M., Šiffalovič, P., Hulman, M., and Sojková, M.: In situ x-ray scattering investigation of PtSe2 grown via thermally assisted conversion, Nano Express 7 (2026) 025015. (APVV-23-0564, -24-0321, -22-0132, VEGA 2 /0075/25, EU Next Generation EU RRP No. 09I01-03-V04-00001, 09I01-03-V04-00002)
Hrubišák, F., Ťapajna, M., Egyenes, F., Pohorelec, O., Dobročka, E., Rosová, A., Hušeková, K., Vincze, A., Noga, P., Izsák, T., Hudec, B., Ščepka, T., and Gucmann, F.: The effect of hydrogen annealing on the electrical properties of β-Ga2O3/4H-SiC MOSFETs grown by liquid-injection MOCVD, Mater. Sci Semicond. Process. 206 (2026) 110402. ( (APVV-20-0220, 24-0325, SK-TW-RD-24-0006, VEGA 2/0156/25, IVF 22320095, CAS-SAS-2024-08, SAS-TUBITAK/JRP/2024/1107.C/COPS, EU Next Generation EU RRP No. 09I05-03-V02-00030)
Lin, Jun-Yan, Velmurugan, R., Lin, Jing-Jie, Huang, Z.-T., Lu, M.-N., Hulman, M., Hsieh, C.-K., and Lin, Jeng-Yu: Synthesis of ZIF-8 derived porous carbon via morphology-controlled electrodeposited ZnO thin films for in-plane micro-supercapacitors, Chem. Engn. J. 536 (2026) 175845.
Vobořil, J., Matvieiev, O., Dubnová, L., Kamarád, D., Marton, M., Vojs, M., Ižák, T., and Šelešovská, R.: Enhanced electrochemical performance of boron-doped diamond electrodes via e-beam-evaporated platinum nanoparticles, Electrochimica Acta 573 (2026) 149445.
Kováč, P., Hušek, I., and Kopera, L.: Small-size superconducting joints of MgB2 wires manufactured by IMD and PIT in-situ or ex-situ processes, Supercond. Sci Technol. 39 (2026) 075006. (VEGA 2/0017/22, APVV24-0654)
Kováč, P., Hušek, I., Berek, D., Kováč, J., Melišek, T., Búran, M., and Kopera, L.: Square filamentary MgB2 wire fabricated by the internal Mg diffusion method, Superconductivity 17 (2026) 100238. (APVV-24-0654, VEGA 2/0064/26)
Kováč, P. and Kováč, J.: Properties of filamentary MgB2 superconducting wires commercially produced by ex-situ and in-situ process, Cryogenics 155 (2026) 104288. (APVV-24-0654, EU Horizon Europe SCARLET).
Kozak, I., Izsák, T., Vretenár, V., Maťko, M., Ondič, L., Kozak, A., Hulman, M., Kromka, A., and Varga, M.: Impact of temperature and excitation wavelength on SiV and NV luminescence in CVD diamond. In NANOMAT 2026: Inter. Conf. on Functional Nanomater. Nanodev. 2026. Sofia: ENNA, 2026, p. 162.
Krajčovičová, T.E., Kotrusz, P., Skákalová, V., Laurenčíková, A., Hulman, M., Mustonen, K., and Sojková, M.: STEM study of graphene/PtSe₂ heterostructures: toward controlled 2D growth. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 33-36. (APVV-23-0564)
Krettová, M., Hušeková, K., Wosko, M., Dobročka, E., Zápražný, Z., Kozak, I., Pohorelec, O., Ťapajna, M., Paszkiewicz, R., and Gucmann, F.: Heteroepitaxial growth of β-Ga2O3 films on AlN/Si substrates by liquid-injection MOCVD. In: WOCSDICE-EXMATEC 2026: 49th Workshop on Compound Semicond. Dev. Integrated Circuits. Gdansk, 2026, p. 81-82. (EU Next Generation EU RRP No. 09I05-03-V02-00030, APVV-24-0325, SK-TW-RD-24-0006, VEGA 2/0156/25)
Kucharovič, M., Kujovič, T., Gömöry, F., Pekarčíková, M., Bahl, C., Wulff, A., and Landvogt, S.: Investigation of current redistribution in multifilamentary REBCO tapes with bridges, IEEE Trans. Applied Supercond. 36 (2026) 8200605. (APVV-24-0061, VEGA 2/0098/24)
Cuninková, E., Kujovič, T., Frolek, L., Šouc, J., Dobrovodský, J., Ferenčík, F., Száraz, Z., and Skarba, M.: Characterization of electromechanical properties of striated tapes with different gap geometries, Supercond. Sci Technol. 39 (2026) 025016. (EU Next Generation EU RRP No. 09I03-03-V04-00402)
Pardo, E., Dadhich, A., Jerance, N., and Fazilleau, P.: Screening currents increase thermal quench propagation speed in ultra-high-field REBCO magnets, Results in Engn. 29 (2026) 108933. (EU Horizon Europe SuperEMFL, APVV-24-0654, VEGA 2/0098/24, EU Next Generation EU RRP No. 09I04-03-V02-00039)
Chaud, X., Herrmannsdörfer, T., Zeitler, U., Fazilleau, P., Senatore, C., Dhallé, M., Pardo, E. Smara, A., Twin, A., and Revilak, P.: Design of all-superconducting user magnets for EMFL, IEEE Trans. Applied Supercond. 36 (2026) 4300705.
Krbal, M., Prikryl, J., Prokop, V., Cicmancova, V., Pereira, J.R., Hrabovsky, J., and Píš, I.: Horizontal to vertical growth of from amorphous thin films controlled by tuning repetition rate of pulsed KrF laser during deposition, Applied Surface Sci 740 (2026) 166956. (VEGA 1/0707/24)
Krbal, M., Prikryl, J., Prokop, V., Pereira, J.R., Slang, S., Mistrik, J., and Píš, I.: Tunability of amorphous MoS2 thin film properties through pulsed KrF laser deposition rate, ACS Applied Mater. Interfaces 18 (2026) 18111-18119.(VEGA 1/0707/24)
Píš, I., Bondino, F., Sojková, M., Hrdá, J., Panasci, S.E., and Giannazzo, F.: Synchrotron radiation photoelectron and soft X-ray absorption spectroscopy of 2D materials. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 23-28. (VEGA 1/0707/24)
Vegso, K., Pribusová Slušná, L., Hulman, M., Hrdá, J., Krajčovičová, T.E., Sojková, M., Jergel, M., and Šiffalovič, P.: Crystallite orientation and lateral material distribution in transition metal dichalcogenide thin films studied by laboratory GIWAXS, J. Applied Crystall. 59 (2026) 316-325. (APVV-22-0132, 23-0564, 24-0321, EU Next Generation EU RRP No. 09I01-03-V04-00001, 09I01-03-V04-00002, VEGA 2/0046/23)
Ries, R.,Solovyov, M., Kujovič, T., Šouc, J., Gömöry, F., Cuninková, E., Pekarčíková, M., Hintze, C., Landvogt, S., Bahl, C.R.H., Brock-Hansen, M.B., Christiansen, J.J., Olden-Jørgensen, N., and Wulff, A.C.: Effect of bending on microstructure and transport properties of filamentized high-temperature superconductor tapes manufactured by low-cost industrial process, Superconductivity 17 (2026) 100233. (VEGA 2/0098/24, APVV-20-0056, EU Next Generation EU RRP 09I04-03-V04-00020)
Rosová, A., Hasenöhrl, S., Švec, P., Dobročka, E., Gucmann, F., Stoklas, R., Kučera, M., Blaho, M., Pomeroy, J.W., Kuball, M., and Kuzmík, J.: Impact of flow modulation on MOCVD-grown In-rich N-polar InAlN films on sapphire, J. Alloys Comp. 1063 (2026) 187698. (VEGA 2/005/22, 2/0120/25, APVV-24–0166, 23–0281, EU Next Generation EU RRP No. 09I01–03-V04–00019).
Shendi, A., Zápražný, Z., Nádaždy, P., Straňovský, A., Mikolášek, M., and Sojková, M.: Optimizing synthesis parameters for enhanced supercapacitive performance of 2D MoS2. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 115-118.
Sobota, M., Lukáč, T., Moško, M., Hušeková, K., Vadlamundi, S.G., Gregušová, D., Greguš, J., Egyenes, F., Pohorelec, O., Ťapajna, M., and Gucmann, F.: Urbach energy analysis, and electrical properties of polycrystalline Β-Ga2O3. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 37-40. (EU Next Generation EU RRP No. 09I05-03-V02-00030, APVV-24-0325, VEGA 2/0156/25)
Sojková, M., Pohorelec, O., Hrdá, J., Krajčovičová, T.E., Kozak, A., Dérer, J., Hulman, M., Ťapajna, M., Egorov, S., Kotrusz, P., Skákalová, V., Mustonen, K., Bondino, F., Píš, I., and Gregušová, D.: Scalable transfer-free fabrication of PtSe2 FETs, FlatChem 59 (2026) 101091. (SK-AT-23-0021, APVV-21-0231, -23-0564, APVV-21-0278, VEGA 2 /0075/25)
Kumar, N., Hotový, I., Kadlečíková, M., Sojková, M., Kostič, I., Gregušová, D., Pohorelec, O., Stopjaková, V., and Dobročka, E.: Low-Temperature ammonia sensing using sulfurized WS2 thin films, Sensors 26 (2026) 4429. (VEGA 1/0480/25, 2/0075/25, APVV-21-0278)
Kadlečíková, M., Hotový, I., Kumar, N., Kostič, I., and Sojková, M.: E12g band of Raman spectral characteristics of nanostructured WS2 films sputtered on sapphire, AIP Conf. Proc. 3455 (2026) 020001.
Baránek, M., Lorenc, D., Ščepka, T., Šoltýs, J., Vetrova, I., Haščík, Š., Grajcar, M., and Neilinger, P.: Photothermal resistivity alignment of optical fibers to superconducting nanowire single-photon detectors, Rev. Sci Instrum. 97 (2026) 033105.
Vadlamudi, S.G., Hušeková, K., Dobročka, E., Gregušová, D., Pohorelec, O., Mičušík, M., Ťapajna, M., and Gucmann, F.: Influende of graded (AlxGa1-x)2O3 buffer layer on structural and electrical properties of β-Ga2O3 films grown on sapphire substrates using MOCVD. In: WOCSDICE-EXMATEC 2026: 49th Workshop on Compound Semicond. Dev. Integrated Circuits. Gdansk, 2026, p. 120-121. (EU Next Generation EU RRP No. 09I05-03-V02-00030, APVV-24-0325, SK-TW-RD-24-0006)
Varga, M., Keshtkar, J., Hušeková, K., Kozak, I., Remeš, Z., Gregušová, D., Sharma, D.K., Kováčová, E., Dobročka, E., Kozak, A., Sobota, M., Izsák, T., Szabó, O., Ťapajna, M., Kromka, A., and Gucmann, F.: Towards Ga2O3/diamond-based solar-blind UV photodetectors. In NANOMAT 2026: Inter. Conf. on Functional Nanomater. Nanodev. 2026. Sofia: ENNA, 2026, p. 69.
Llewelyn, C.P., Zápražný, Z., Dobročka, E., Gucmann, F., and Lamb, D.: Scalable growth and properties of (AlxGa1−x)2O3 thin films on 2- and 4-inch sapphire via close-coupled showerhead MOCVD, Phys. Status Solidi A 223 (2026) e202500608. (APVV-24-0325, SK-TW-RD-24-0006)
Zaťko, B., Varga, M., Šagátová, A., Kršjak, V., Szabó, O., and Kromka, A.: Radiation detection with polycrystalline CVD diamond films: effects of film thickness and irradiation on detector performance, J. Instrument. 21 (2026) C02034. (APVV SK-CZRD-21-0116, 18-0243, 22-0382, VEGA 2/0084/20, EU Next Generation EU RRP No. 09I05-03-V02-00073, SAV IMPULZ IM-2023-87)
Oancea, C., Granja, C., Pavelková, K., Magrin, G., Barna, S., Grevillot, L., Resch, A., Balan, C., Gajewski, J., Rucinski, A., Stasica-Dudek, P., Krzempek, D., Poklop, D., Kurucz, S., Šagátová, A., Zaťko, B., Sivertz, M., Jakubek, J., and Rydygier, M.: SiC MiniPIX Timepix3 detectors for beam characterization and UHDR monitoring in particle therapy, J. Instrument. 21 (2026) C04082.
Kotorová, S., Šagátová, A., Osvald, J., and Zaťko, B.: Effect of temperature on the electrical properties of CdTe radiation detector, AIP Conf. Proc. 3455 (2026) 060011.
Kurucová, N., Šagátová, A., Kováčová, E., and Zaťko,B.: Effect of epitaxial layer thickness on the electrical properties of SiC detectors, AIP Conf. Proc. 3455 (2026) 060007.