- 2026
Sobota, M., Lukáč, T., Moško, M., Hušeková, K., Vadlamundi, S.G., Gregušová, D., Greguš, J., Egyenes, F., Pohorelec, O., Ťapajna, M., and Gucmann, F.: Urbach energy analysis, and electrical properties of polycrystalline Β-Ga2O3. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 37-40.
Vadlamudi, S.G., Hušeková, K., Dobročka, E., Gregušová, D., Pohorelec, O., Mičušík, M., Ťapajna, M., and Gucmann, F.: Influende of graded (AlxGa1-x)2O3 buffer layer on structural and electrical properties of β-Ga2O3 films grown on sapphire substrates using MOCVD. In: WOCSDICE-EXMATEC 2026: 49th Workshop on Compound Semicond. Dev. Integrated Circuits. Gdansk, 2026, p. 120-121.
Gucmann, F., Chouhan, H., Dobročka, E., Hušeková, K., Gregušová, D., Vadlamudi, S.G., Rosová, A., Chidambaram, R.J., and Ťapajna, M.: Rotational domains in heteroepitaxial β-Ga2O3 films grown by MOCVD. In: Inter. VLSI Symp. on Technol., Systems and Appl. (VLSI TSA), HsinChu, Taiwan. IEEE 2026. ISBN 979-8-3315-6238-0. Invited.
- 2025
Vadlamudi, S.G., Ťapajna, M., and Sobota, M.: Theory of electronics – development of Ga2O3 transistors for applications in kV range. In: Proc. ELITECH’25. Bratislava, Spektrum STU 2025. ISBN 978-80-227-5492-7.