Ing. Marcel PORGES, CSc.


PorgesM., Šafránková, J., Lalinský, T., Kostič, I., Rangelow, I.W., Tegude, F.J.: Asymmetric (Schottky — Ohmic) MSM photodetector, Solid State Electr. 38 (1995) 425.


Gregušová, D., Lalinský, T., Mozolová, Ž., Machajdík, D., Pochaba, I., Vávra, I., and PorgesM.: Characterization of WN x metallization prepared by ion implantation of nitrogen, Thin Solid Films 249 (1994) 250.


Šafránková, J., PorgesM., Lalinský, T., Mozolová, Ž., Hudek, P., Kostič, I., Kraus, J., von Wendorff, W., Tegude, F.J., and Jäger, D.: Photoelectrica l properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET, Physica Status Solidi A 140 (1993) K111.

PorgesM., Lalinský, T., Šafránková, J., Hudek, P., Kraus, J., Tegude, F.J., von Wendorff, W., and Jäger, D.: GaAs MSM photodiode using the highly doped channel layer of a heterostructure MESFET, Physica Status Solidi A 136 (1993) K65.


Papaioannou, G.J., Ioannou-Sougleridis, V., Lalinský, T., Kuzmík, J., Porges M., and Kourkoustas, C.D.: The PHOTOFET method in submicrometer GaAs MESFETs: substrate leakage current effect, Semicond. Sci Technol. (1992) 935.

PorgesM. and Lalinský, T.: Characterization of planar ohmic contacts – the effect of position of probes on contact area, Solid State Electr. 35 (1992) 157-158.


Kuzmík, J., Lalinský, T., Mozolová, Ž., and Porges M.: DC performance of short ion-implanted GaAsMESFETs, the role of gate length shortening, Solid-State Electr. 33 (1990) 1223.

Porges M., Lalinský, T., Mozolová, Ž., and Kuzmík, J.: A three layer model of p lanar alloyed ohmic contacts to n-GaAs, Solid-State Electr. 33 (1990) 1531.