RNDr. Jaroslava ŠAFRÁNKOVÁ, CSc.


Huran, J., ŠafránkováJ., and Kobzev, A.P.: Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition, Vacuum 50 (1998) 103.

ŠafránkováJ., Huran, J., Hotový, I., Kobzev, A.P., and Korenev, S.A.: Characterization of nitrogen-doped amorphous silicon carbide thin films, Vacuum 51 (1998) 165.


Porges, M., ŠafránkováJ., Lalinský, T., Kostič, I., Rangelow, I.W., Tegude, F.J.: Asymmetric (Schottky — Ohmic) MSM photodetector, Solid State Electr. 38 (1995) 425.


ŠafránkováJ., Porges, M., Lalinský, T., Mozolová, Ž., Hudek, P., Kostič, I., Kraus, J., von Wendorff, W., Tegude, F.J., and Jäger, D.: Photoelectrica l properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET, Physica Status Solidi A 140 (1993) K111.

Porges, M., Lalinský, T., ŠafránkováJ., Hudek, P., Kraus, J., Tegude, F.J., von Wendorff, W., and Jäger, D.: GaAs MSM photodiode using the highly doped channel layer of a heterostructure MESFET, Physica Status Solidi A 136 (1993) K65.


Hrubčín, L., ŠafránkováJ., and Hudek, P.:Effect of proton bombardement on the dark current of GaAs MSM structures, Physica Status Solidi A 133 (1992) K53.


ŠafránkováJ. and Kordoš, P.: Photocurrent multiplicaion in GaAs Schottky photodiodes, Solid-State Electr. 30 (1987) 93.