- 2026
Chidambaram, J.R., Rosová, A.,* Dobročka, E., Švec, P.Jr., Hušeková, K., Kumar, S.,Ťapajna, M., and Gucmann, F.: Variation of surface morphology in (201) β-Ga2O3 epitaxial layers on c-plane sapphire substrates connected with {310}/(201) volume ratio. In Proc. ADEPT. Zilina: Univ. Zilina in EDIS, 2026, p. 111-114.
Gucmann, F., Chouhan, H., Dobročka, E., Hušeková, K., Gregušová, D., Vadlamudi, S.G., Rosová, A., Chidambaram, R.J., and Ťapajna, M.: Rotational domains in heteroepitaxial β-Ga2O3 films grown by MOCVD. In: Inter. VLSI Symp. on Technol., Systems and Appl. (VLSI TSA), HsinChu, Taiwan. IEEE 2026. ISBN 979-8-3315-6238-0. Invited.
- 2025
Chidambaram, R.J., Rosová, A., Dobročka, E., Hušeková, K., Ťapajna, M., and Gucmann, F.: Structural characterization of twinning in β-Ga₂O₃ filament inclusions on Ga₂O₃ thin films epitaxially grown on sapphire substrates by MOCVD. In: Proc. ELITECH’25. Bratislava, Spektrum STU 2025. ISBN 978-80-227-5492-7.