Publikačná činnosť

Kováčová, Eva

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Publikácie za rok 2024:
  • HRUBČÍN, Ladislav** – ZAŤKO, Bohumír – KOVÁČOVÁ, Eva. Silicon radiation detectors with rectifier junction prepared by different technological procedures. In AIP Conference Proceedings. – AIP, 2024, vol. 3251, no. 080005. (2023: 0.152 – SJR). ISBN 978-0-7354-1697-0. ISSN 0094-243X. Dostupné na: https://doi.org/10.1063/5.0239936 (APVV 22-0382) Typ: ADMB
  • HURAN, Jozef – SKRYPNIK, A.V. – DUJNIČ, Viera – DOROSHKEVICH, A.S. – NOZDRIN, Mikhail A. – KOVÁČOVÁ, Eva – SHIRKOV, G.D. Photoelectron emission properties of very thin carbon films prepared by electron beam-plasma vacuum deposition and reactive magnetron sputtering. In 12th International Conference on Advances in Electronic and Photonic Technologies – ADEPT 2024 : Proceedings of ADEPT. Editors: M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. – Zilina : University of Zilina in EDIS-Publishing Centre of UZ, 2024, s. 41-44. ISBN 978-80-554-2109-4. (International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2024)) Typ: AFD
  • KURUCOVÁ, N. – ŠAGÁTOVÁ, A. – PAVLOVIČ, M. – ZAŤKO, Bohumír – KOVÁČOVÁ, Eva – BOHÁČEK, Pavol – ŠKRINIAROVÁ, Jaroslava – PREDANOCY, Martin. Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles. In Journal of Instrumentation, 2024, vol. 19, art. no. C03049. (2023: 1.3 – IF, Q3 – JCR, 0.58 – SJR, Q2 – SJR). ISSN 1748-0221. Dostupné na: https://doi.org/10.1088/1748-0221/19/03/C03049 Typ: ADCA
  • KURUCOVÁ, N.** – ŠAGÁTOVÁ, A. – KOVÁČOVÁ, Eva – ZAŤKO, Bohumír. Influence of quasi-ohmic electrode on performance of semi-insulting GaAs detectors. In AIP Conference Proceedings : Applied Physics of Condensed Matter (APCOM 2023), 2024, vol. 3054, no. 050005. (2023: 0.152 – SJR). ISSN 0094-243X. Dostupné na: https://doi.org/10.1063/5.0192046 Typ: ADMB
  • ŠAGÁTOVÁ, A.** – HRUBČÍN, Ladislav – KURUCOVÁ, N. – NEČAS, V. – KOVÁČOVÁ, Eva – EVSEEV, S.A. – ZAŤKO, Bohumír. Electrical properties study of the 4H-SiC detectors based on thick epitaxial layer. In AIP Conference Proceedings : Applied Physics of Condensed Matter (APCOM 2023), 2024, vol. 3054, no. 050011. (2023: 0.152 – SJR). ISSN 0094-243X. Dostupné na: https://doi.org/10.1063/5.0187794 Typ: ADMB
  • ŠAGÁTOVÁ, A.** – KOVÁČOVÁ, Eva – BENČUROVÁ, Anna – KONEČNÍKOVÁ, Anna – GREGUŠOVÁ, Dagmar – NEČAS, V. – ZAŤKO, Bohumír. The bias effect on alpha spectrometry of very thin semi-insulating GaAs detectors. In AIP Conference Proceedings. – AIP, 2024, vol. 3251, no. 080010. (2023: 0.152 – SJR). ISBN 978-0-7354-1697-0. ISSN 0094-243X. Dostupné na: https://doi.org/10.1063/5.0235495 (APVV 22-0382. APVV 18-0273) Typ: ADMB
  • ZAŤKO, Bohumír** – ŠAGÁTOVÁ, A. – HRUBČÍN, Ladislav – KOVÁČOVÁ, Eva – NOVÁK, A. – KURUCOVÁ, N. – POLANSKY, Š. – JAKUBEK, J. Imaging and spectrometric performance of SiC Timepix3 radiation camera. In Journal of Instrumentation, 2024, vol. 19, no. C01003. (2023: 1.3 – IF, Q3 – JCR, 0.58 – SJR, Q2 – SJR). ISSN 1748-0221. Dostupné na: https://doi.org/10.1088/1748-0221/19/01/C01003 Typ: ADCA
  • ZAŤKO, Bohumír** – ŠAGÁTOVÁ, A. – KOVÁČOVÁ, Eva. Detection and spectrometric properties of the 4H-SiC Schottky detectors based on thick epitaxial layers. In AIP Conference Proceedings. – AIP, 2024, vol. 3251, no. 080006. (2023: 0.152 – SJR). ISBN 978-0-7354-1697-0. ISSN 0094-243X. Dostupné na: https://doi.org/10.1063/5.0234963 (APVV 22-0382. APVV 18-0243) Typ: ADMB