Publikačná činnosť

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Publikácie za rok 2025:
  • BABCHENKO, Oleg – SOJKOVÁ, Michaela – HULMAN, Martin – ČERMÁK, Jan – KROMKA, A. – CLAERBOUT, V.E.P. – NICOLINI, Pierre – LÓPEZ-CARBALLEIRA, D. – KULIČEK, J. – REZEK, B. Self-oriented MoS2 nanosheets on microcrystalline diamond layers: controlled synthesis and optoelectronic effects. In ACS Applied Electronic Materials, 2025, vol. 7, p. 1004-1018. ISSN 2637-6113. Dostupné na: https://doi.org/10.1021/acsaelm.4c01704 (APVV 21-0231. VEGA 2/0059/21. VEGA 2/0046/23) Typ: ADCA
  • FLOROVIČ, M. – DZURIŠ, M. – HARŤANSKÝ, R. – KOVÁČ, Jaroslav Jr. – CHVÁLA, A. – GREGUŠOVÁ, Dagmar – GUCMANN, Filip – ŤAPAJNA, Milan. Simple RF on-chip calibration for high-frequency transistor measurements. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. – IEEE, 2024, p. 46-49. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Typ:
  • KUZMÍK, Ján** – BLAHO, Michal – GREGUŠOVÁ, Dagmar – ELIÁŠ, Peter – POHORELEC, Ondrej – HASENÖHRL, Stanislav – HAŠČÍK, Štefan – GUCMANN, Filip – ZÁPRAŽNÝ, Zdenko – DOBROČKA, Edmund – KYAMBAKI, M. – KONSTANTINIDIS, G. Growth and performance of n++ GaN cap layer for HEMTs applications. In Materials science in semiconductor processing, 2025, vol. 185, no. 108959. ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2024.108959 (VEGA 2/0005/22. Horizont Európa-101091433. VEGA 2/0068/21) Typ: ADCA
  • MATÚŠ, M. – STUCHLÍKOVÁ, Ľ. – GREGUŠOVÁ, Dagmar – MORALES, M. – WEIS, M. – MAREK, J. – RUTERANA, P. Impact of Indium content on defect distribution in InGaN/GaN QW structures. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. – IEEE, 2024, p. 38-41. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21) Typ:
  • ROSOVÁ, Alica – ČAPLOVIČOVÁ, M. – RUTERANA, P. – DOBROČKA, Edmund – ELIÁŠ, Peter – GUCMANN, Filip – HASENÖHRL, Stanislav – STOKLAS, Roman – KUZMÍK, Ján. Influence of InAlN layer Mg doping on the quality of InN/In0.61Al0.39N heterostructure deposited by MOCVD. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. – IEEE, 2024, p. 30-33. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Typ:
  • STOKLAS, Roman – HASENÖHRL, Stanislav – GREGUŠOVÁ, Dagmar – DOBROČKA, Edmund – GUCMANN, Filip – ELIÁŠ, Peter – ROSOVÁ, Alica – MIČUŠÍK, Matej – CHROBÁK, Š. – KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. – IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Typ:
  • VACULA, P. – VANKO, Gabriel – HUSÁK, M. – GRESL, T. – BARRI, D. – KOTĚ, V. – VACULA, M. – NEMAZAL, J. – NÁHLÍK, J. – ANDRLE, M. – SOROKINA, K. – URBAN, M. – MANCUSO, F. Enhancing of the GaN HEMTs devices through advanced innovative topologies. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. – IEEE, 2024, p. 1-4. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Typ: