Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.
1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
2. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
3. Akyol, F.: Mater. Sci Semicond. Process. 170 (2024) 107968.