MSc. Keshtar Javad

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
2. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
3. Akyol, F.: Mater. Sci Semicond. Process. 170 (2024) 107968.