Ing. Osvald Jozef, DrSc.

Osvald, J., Hrubčín, L., and Zaťko, B.: Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes, Mater. Sci Semicond. Process. 140 (2022) 106413.

1. Deniz, AR.: J. Mater. Sci-Mater. Electr. ‏ 33 (2022) 26954.
2. Efeoglu, H.: J. Electron. Mater. 52 (2023) 1410.
3. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.

Osvald, J.: Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance, Semicond. Sci Technol. 37 (2022) 125003.

1. Saadaoui, S.: Brazil. J. Phys. 53 (2023) 26.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: Study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

1. Ozdemir, A.F.: Physica B 616 (2021) 413125.
2. Gullu, H.H.: J. Electron. Mater. 50 (2021) 7044.
3. Wang, X.: J. Semicond. 42 (2021) 112802.
4. Kacha, A.H.: Semiconductors 55 (2021) S54.
5. Gao, R.: Sensors Actuators A 333 (2022) 113241.
6. Li, X.X.: J. Mater. Res. Technol.-JMR&T 18 (2022) 2152.
7. Capan, I.: Electronics 11 (2022) 532.
8. Napoli, M.D.: Front. Phys. 10 (2022) 898833.
9. Bernat, R.: Materials 16 (2023) 2202.
10. Huang, Z.: J. Mater. Sci-Mater. Electron. 34 (2023) 1046.
11. Mandal, K.C.: IEEE Trans. Nuclear Sci 70 (2023) 823.
12. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.
13. Long, Z.: Nuclear Instr. Methods in Phys. Res. A 1056 (2023) 168585.
14. Capan, I.: Materials 17 (2024) 1147.

Osvald, J., Hrubčín, L., and Zaťko, B.: Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors, Applied Surface Sci 533 (2020) 147389.

1. Feng, B.Y.: Applied Phys. Lett. 118 (2021) 181602.
2. Ozdemir, A.F.: Physica B 616 (2021) 413125.
3. Huang, L.Q.: Japan. J. Applied Phys. 61 (2022) 014003.
4. Yan, Q.L.: Applied Phys. Lett. 120 (2022) 092106.
5. Duman, S.: Sensors Actuators A 338 (2022) 113457.

Osvald, J.: Simulation of structure parameters’influence on the threshold voltage of normally-off p-GaN/AlGaN/GaN transistors, Phys. Status Solidi a 216 (2019) 1900453.

1. Duan, B.X.: IEEE Trans. Electron Dev. 69 (2022) 1200.

Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206.

1. Sun, S.: Mater. Sci Semicond. Process. 114 (2020) 105084.
2. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
3. Hou, C.: Applied Phys. Lett. 117 (2020) 203502.
4. Ozdemir, M.C.: Mater. Sci Semicond. Process. 125 (2021) 105629.
5. Turut, A.: Turkish J. Phys.‏ 45 (2021)‏ 268.
#     6. Sreejith, S.: Emerging Low-Power Semiconductor Devices. CRC Press 2022, pp. 127-152. ISBN 978-100-324-077-8

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.
4. Xie, X.-M.: Trans. Nonferr. Metals Soc China‏ 30 (2020)‏ 3058.
5. Jiang, L.: Nuclear Instr. Methods in Phys. Res. A 1048 (2023) 167917.

Osvald, J.: Fast and slow traps in Al2O3/(GaN)/AlGaN/GaN heterostructures studied by conductance technique, Physica E 97 (2018) 126-129.

1. Taoka, N.: Semicond. Sci Technol. 34 (2019) 025009.
2. Kim, H.: Optik 184 (2019) 527.

Osvald, J.: Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies, Physica E 93 (2017) 238-242.

1. Ghosh, J.: Microelectr. Engn. 216 (2019) 111097.
2. Luo, X. J.: J. Alloys Comp. 814 (2020) UNSP 152185.
3. Viswanathan, S.: Inter. J. Numer. Modell.-Electron. Networks Dev. Fields 35 (2022) 2936.
4. Fiorenza, P.: Applied Surface Sci 579 (2022) 152136.
5. Hasan, S.: Crystals 13 (2023) 231.
#     6. Chanchal: Comm. Computer Inf. Sci 1687 (2022) 76.

Osvald, J., Vanko, G., Chow, L., Chen, N.C., and Chang, L.B.: Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas,  Microelectron. Reliab. 78 (2017) 243–248.

1. Hsieh, Y.L.: Microelectron. Reliab. 142 (2023) 114905.

Osvald, J., Stoklas, R., and Kordoš, P.: Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps, Mater. Sci in Semicond. Process. 31 (2015) 525-529.

1. Ziane, A.: J. Electron. Mater. 47 (2018) 5283.
2. Hoshii, T.: Japan. J. Applied Phys. 58 (2019) 061006.
3. Mao, W.: Applied Phys. Express 15 (2022) 016504.
4. Lin, X.Y.: IEEE Trans. Electron Dev. 70 (2023) 537.

Osvald, J.Back-to-back connected asymmetric Schottky diodes with series resistance as a single diode, Phys. Status Solidi A 212 (2015) 2754-2758.

1. Qiao, S.: ACS Nano 10 (2016) 8233.
2. Banerjee, A.: European Phys. J.-Applied Phys. 80 (2017) 20101.
3. Lin, X.: Nature Comm. 8 (2017) 613.
4. Chou, S.-Y.: ACS Nano 11 (2017) 11368.
5. Hajzus, J.R.: Nanoscale 10 (2018) 319.
6. Nouchi, R.: Adv. Mater. Interf. 5 (2018) 1801261.
7. de Melo, C.: ACS Applied Mater. Interf. 10 (2018) 40958.
8. Qiao, S.: ACS Applied Mater. Interf. 10 (2018) 35344.
9. Dai, M.: ACS Nano 12 (2018) 8739.
#    10. Rahman, S.F.A.: Telkomnika (Telecomm. Comput. Electron. Control) 17 (2019) 2427.
11. Parsonnet, E.: Phys. Rev. Lett. 125 (2020) 067601.
12. Rodriguez, J.R.: Applied Phys. Lett. 117 (2020) 052901.
13. Wang, Z.: Physica Status Solidi A 217 (2020) 1901018.
14. Miranda, E.: IEEE Trans. Nanotechnol. 19 (2020)‏ 297.
15. Kumar, N.: Physica B 599 (2020) 412547.
16. Li, S.: NPJ 2D Mater. Appl.‏ 5 (2021) 1.
17. Ortiz, W.: Nano Express 2 (2021) 010020.
18. Mao, SJ.: IEEE Trans. Electron Dev. 68 (2021) 1835.
19. Banerjee, A.: Physica B 618 (2021) 413142.
20. Zhang, M.: Nanoscale 13 (2021) 17147.
21. Labar, R.: J. Electron. Mater. 51 (2022) 223.
22. Park, S.: Applied Surface Sci 581 (2022) 152421.
23. Rhiger, D.R.: J. Electron. Mater. 51 (2022) SI4721.
24. Sun, T.Y.: Cell Rep. Phys. Sci 3 (2022) 100939.
25. Bhattacharya, G.: J. Phys. D 55 (2022) 435101.
26. Zhao, Q.H.: Nano Energy 108 (2023) 108238.
27. Oz, D.: ACS Photon. 10 (2023) 1783.

Osvald, J., Stoklas, R., and Kordoš, P.: Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance, Phys. Status Solidi B 252 (2015) 996-1000.

1. Suria, A.J.: Semicond. Sci Technol. 31  (2016) 115017.
2. Yatabe, Z.: J. Phys. D 49  (2016) 393001.
3. Nishiguchi, K.: Japan. J. Applied Phys. 56 (2017) 101001.
4. Hashizume, T.: Mater. Sci Semicond. Process. 78 (2018) 85.
5. Kuzmin, M.: Adv. Mater. Interfaces 6 (2019) 1802033.
6. Ouduangvilai, K.: J. Semicond. Technol. Sci 19 (2019) 540.
7. Viswanathan, S.: Inter. J. Numer. Modell.-Electron. Networks Dev. Fields 35 (2022) 2936.

Osvald, J.: Influence of interface deep traps on capacitance of AlGaN/GaN heterojunctions In: Phys. Semicond. Devices. Eds. V.K. Jain, A. Verma. Heidelberg: Springer 2014. ISBN 978-3-319-03002-9. P. 215-217.

         1. Loan, S.A.: Electron. Lett. 52 (2016) 656.
2. Verma, S.: Superlatt. Microstr. 119 (2018) 181.
3. Verma, S.: J. Comput. Electron. 17 (2018) 256.

Kaushal, P., Chand, S., and Osvald, J.Current–voltage characteristics of Schottky diode simulated using semiconductor device equations, Inter. J. Electron. 100 (2013) 686-698.

1. Biyikli, N.: Physica Scripta 89 (2014) 095804.
2. Guzeldir, B.: J. Alloys Comp. 627 (2015) 200.
3. Aydin, H.: J. Alloys Comp. 625 (2015) 18.
4. Andrei, G.: Proc. 7th Inter. Conf. on Electron., Computers and Artificial Intellig. – ECAI 2015. Art. no. 7301251, p. P49.
5. Donarelli, M.: Proc. 18th AISEM Annual Conf. 2015. Art. no. 7066814.
6. Tataroglu, A.: Dyes Pigments 132 (2016) 64.
7. Ejderha, K.: Surface Rev. Lett. 24 (2017) 1750052.
8. Khairir, N.S.: Surfaces Interf. 6 (2017) 229.
9. Turut, A.: J. Optoelectron. Adv. Mater. 19 (2017) 424.
10. Tataroglu, A.: Silicon 10 (2018) 683.
11. Fritah, A.: Inter. Conf. Comm. Electr. Engn. – ICCEE 2018, p. 10.
12. Zeghdar, K.: Japan. J. Applied Phys. 58 (2019) 014002.
13. Baltakesmez, A.: Vacuum 168 (2019) UNSP 108825.
14. Kup, S.: Mater. Today-Proc. 18 (2019) SI1936.
15. Lewerenz, H.J.: RSC Energy Environment Ser. 22 (2019) 3.
16. Ziko, M.H.: Crystals 10 (2020)‏ 636.
17. Nafradi, B.: Proc. National Acad. Sci USA 117 (2020)‏ 6417.
18. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
#     19. Ziko, M.H.: Mater. Sci Forum 1004 MSF (2020)‏ 960.
#     20. Chatterjee, S.: Inter. J. Electron. Lett. 8 (2020)‏ 223.
#     21. Banerjee, S.N.: 4th Inter. Conf. Electron., Mater. Engn. Nano-Technol. – IEMENTech 2020, no. 9270092.
22. Kumar, A.: Solar Energy 220 (2021) 35.
23. Ejderha, K.: J. Electron. Mater. 50 (2021) 6741.
24. Basov, M.: Sensors Actuators A 331 (2021) 112930.
25. Li, Y.F.: J. Thermal Sci 31 (2022) 976.
#     26. Nagasai, R.K.K.B.: IEEE 5NANO 2022, pp. 1-4.
27. Ejderha, K.: J. Electron. Mater. 52 (2023) 1410.
#   28. Devi, A.V.N.: IEEE Inter. Conf. Emerg. Electron. ICEE 2022.

Osvald, J.Interface electron traps as a source of anomalous capacitance in AlGaN/GaN heterostructures, J. Electr. Mater. 42 (2013) 1184-1189.

1. Cetinkaya, H. G.: J. Alloys Compounds 721 (2017) 750.
2. Cetinkaya, H. G.: J. Alloys Compounds 728 (2017) 896.

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., and Dzuba, J.: Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation, Applied Surface Sci 283 (2013) 160-167.

1. Jung, S.M.: Semicond. Sci Technol.  30 (2015) 075012.
2. Eisner, S.R.: IEEE Aerospace Conf. Proc. – AEROCONF 2021.

Chand, S., Kaushal, P., and Osvald, J.Numerical simulation study of current-voltage characteristic of a Schottky diode with inverse doped surface layer, Mater. Sci in Semicond. Process. 16 (2013) 454-460.

1. Biyikli, N.: Physica Scripta 89 (2014) 095804.
2. Kosec, G.: Engn. Analysis with Boundary Elements 50 (2015) 69.
3. Varma, T.: J. Nanoelectron. Optoelectron. 10 (2015) 761.
4. Kuang, Y.: Optical Quantum Electron. 48 (2016) 199.
5. Ejderha, K.: Silicon 9 (2017) 395.
#     6. Sreejith, S.: Emerging Low-Power Semiconductor Devices. CRC Press 2022, pp. 127-152. ISBN 978-100-324-077-8

Osvald, J.Simulation of the influence of interface states on capacitance characteristics of insulator/AlGaN/GaN heterojunctions, Phys. Status Solidi A 210 (2013) 1340-1344.

1. Stoklas, R.: Semicond. Sci Technol.  29 (2014) 045003.
2. Yoon, Y.J.: J. Korean Phys. Soc 65 (2014) 1579.
3. Bakeroot, B.: J. Applied Phys. 116 (2014) 134506.
4. Molnar, M.: Applied Surface Sci 312 (2014) 157.
5. El-Amin, A. A.: Silicon 9 (2017) SI47.
6. Panda, D.K.: AEU-Inter. J. Electron. Comm.82 (2017) 467.

Osvald, J.Surface states influence on capacitance properties of dielectric/AlGaN/GaN heterostructures, Japan. J. Applied Phys. 52 (2013) 08JN09.

       1. Colon, A.: Solid-State Electron. 99 (2014) 25.

Chand, S., Kaushal, P., and Osvald, J.: Effect of inverse doped surface layer in Schottky barrier modification: a numerical study, J. Electr. Mater. 41 (2012) 3387-3392.

1. Baltakesmez, A.: Vacuum 168 (2019) UNSP 108825.

Osvald, J.: Interface traps in insulator/AlGaN/GaN heterostructure capacitors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 59-62.

        1. Ma, X.: Physica Status Solidi A 212 (2015) 2928.

Osvald, J.: Interface electron traps and capacitance characteristics of AlGaN/GaN. In: Proc. 18th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2012). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 121-124.

1. Song, Y.L.: Micromach. 12 (2021) 751.

Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., and Kostič, I.: Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs, Microelectr. Engn. 88 (2011) 166-169.

1. Ketteniss, N.: IEEE Electron Device Lett. 33 (2012) 519.
2. Bisi, D.: Europ. Solid-State Device Research Conf. 2013, p. 61.
3. Loghmany, A.: Solid-State Electron. 103 (2015) 162.
4. He, Y.: IEEE SSL China – IFWS 2016. P. 116.
*     5. Fornasiero, Q.: WOCSDICE EXMATEC 2021, p. 50.
6. Mauduit, C.: Microelectron. Engn. 277 (2023) 112020.

Osvald, J.Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures. J. Applied Phys. 110 (2011) 073702.

1. Ho, J.-W.: 2012 38TH IEEE Photovoltaic Spec. Conf. (PVSC) (2012) P. 1898.
2. Yang, Y.-N.: Acta Phys. Sinica 62 (2013) 177302.
3. Bera, L.K.: ECS Solid State Lett. 2 (2013) Q105.
4. Yang, G.: J. Applied Phys. 115 (2014)
5. Jia, C.H.: Applied Phys. Lett. 104 (2014) 043501.
6. Dogan, H.: Physica B 457 (2015) 48.
7. Zhao, M.: Chinese Phys. Lett. 32 (2015) 048501.
8. Ruzzarin, M.: IEEE Trans. Electron Dev. 65 (2018) 2778.
9. Wang, C.A.: J. Applied Phys. 123 (2018)134502.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., and Vincze, A.: CV characterization of SF6 plasma treated AlGaN/GaN heterostructures, Microelectr. Engn. 87 (2010) 2208-2210.

1. Wang, R.: J. Phys. D 51 (2018) 065108.
2. Wang, R.: Phys. Rev. Applied 11 (2019) 054021.
3. Fornasiero, Q.: J. Vacuum Sci Technol. B 41 (2023) 012202.

Osvald, J., : Influence of interface states on C-V characteristics of AlGaN/GaN heterostructures. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 167-170.

1. Kumar, M.: ECS Trans. 44 (2012) 1285.
2. Harmatha, L.: Applied Surface Sci 312 (2014) 102.
3. Mostefaoui, M.: J. Optoelectron. Adv. Mater. 16 (2014) 849.

Osvald, J.Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics, J. Applied Phys. 106 (2009) 013708.

1. Ferng, Y.C.: Electrochem. Solid State Lett. 13 (2010) H350.
2. Zhang, J.: Rev. Sci Instrum. 81 (2010) 103704.
3. Tan, G.: Modern Phys. Lett. B 25 (2011) 1293.
4. Chen, Z.: Japan. J. Applied Phys. 50 (2011) 081001.
5. Li, L.: Solid-St. Electron. 68 (2012) 98.
6. Dogan, H.: Physica B 457 (2015) 48.
7. Tham, W.H.: IEEE Trans. Electron Dev. 63 (2016) SI345.
8. Pandit, B.: AIP Adv. 11 (2021) 045314.
9. Fukuhara, N.: J. Applied Phys. 133 (2023)085702.

Osvald, J.Temperature dependence of barrier height parameters of inhomogeneous Schottky diodes, Microelectron. Engn. 86 (2009) 117-120.

1. Yildirim, N.: Microelectr. Engn. 86 (2009) 2270.
2. Ejderha, K.: J. Alloys. Compounds 484 (2009) 870.
3. Bacaksiz, E.: J. Alloys. Compounds 496 (2010) 560.
4. Kavasoglu, A.S.: J. Alloys. Compounds 492 (2010) 421.
5. Ejderha, K.: Superlatt. Microstr. 47 (2010) 241.
6. Boyarbay, B.: Thin Solid Films 518 (2010) 2216.
7. Tascioglu, I.: J. Applied Phys. 108 (2010) 064506.
8. Harrabi, Z.: Physica B 405 (2010) 3745.
9. Soylu, M.: J. Alloys. Compounds 509 (2011) 5105.
10. Bacaksiz, E.: Thin Solid Films 519 (2011) 3679.
11. Kavasoglu, A.S.: J. Alloys. Compounds 509 (2011) 9394.
12. El-Nahass, M.M.: Synthetic Metals 161 (2011) 2253.
13. Guzeldir, B.: J. Phys. Chem. Solids 72 (2011) 1506.
14. Peta, K.R.: Microelectr. Engn. 93 (2012) 100.
15. Tripathi, S. K.: J. Applied Phys. 111 (2012) 074513.
16. Kinaci, B.: Mater. Sci Semicond. Process. 15 (2012) 531.
17. Sharma, M.: J. Applied Phys. 112  (2012)  024521.
18. Tugluoglu, N.: Phys. Status Solidi A 209 (2012) 2313.
19. Saglam, M.: J. Phys. Chem. Solids 74 (2013) 370.
20. Birel, O.: Physica B 412 (2013) 64.
21. Zhao, M.: Mater. Sci Engn. B 178 (2013) 465.
22. Yeganeh, M.A.: J. Semicond. 34 (2013) 082002.
23. Tombak, A.: Mater. Sci Semicond. Process. 28 (2014) 98.
24. Bestas, A.N.: Applied Surface Sci 318 (2014) 280.
25. El-Menyawy, E.M.: J. Mater. Sci-Mater. Electron. 25 (2014) 3939.
26. Mamor, M.: Superlatt. Microstr. 72 (2014) 344.
27. Hendi, A. A.: Synthetic Metals 199 (2015) 388.
28. Maril, E.: Philosoph. Magazine 95 (2015) 1049.
29. Zhao, M.: Chinese Phys. Lett. 32 (2015) 048501.
30. Soliman, I.M.: Synthetic Metals 209 (2015) 55.
31. Deniz, A.R.: J. Colloid Interface Sci 473 (2016) 172.
32. Filali, W.: Superlatt. Microstr. 111 (2017) 1010.
33. Coskun, F. M.: J. Applied Phys. 125(2019) 214104.
34. Nawar, A.M.: Applied Phys. A 126 (2020) 113.
35. Blond, J.: Solid-State Electron. 170 (2020) 107838.
36. Li, S.: IEEE Trans. Electron Dev. 68 (2021) ‏443.
37. Caldiran, Z.: J. Alloys. Compounds 865 (2021) 158856.
38. Bilgili, A.K.: Brazil. J. Phys. 51 (2021) 527.
39. Mondal, S.: Mater. Sci Semicond. Process. 130 (2021) 105834.
40. Kim, H.: Applied Phys. A 127 (2021) 647.
41. Narayanan, P.V.: ACS Applied Electron. Mater. 4 (2022) 6038.
42. Bekaddour, A.: Micro Nanostruct. 173 (2023) 207464.

Srnánek, R., Irmer, G., Donoval, D., Osvald, J., McPhail, D., Christoffi, A., Sciana, B., Radziewicz, D., Tlaczala, M., : Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures. Microelectr. J. 39 (2008) 1439-1443.

            1. Sanson, A.: J. Raman Spectros. 45 (2014) 197.

Osvald, J.Numerical analysis of gate leakage current in AlGaN Schottky diodes. Applied Surface Sci 255 (2008) 793-795.

 1. Dobos, L.: Vacuum 82 (2008) 794.
2. Korkut, H.: AIP Conf. Proc. 1400 (2011) 497.
3. Chen, F.: Mater. Sci Engn. B 183 (2014) 24.

Osvald, J.: Simulation of influence of AlGaN/GaN heterojunction parameters on its capacitance curves. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 319-322.

       1. Pardeshi, H.: Superlatt. Microstr. 60 (2013) 47.

Osvald, J.Numerical simultation of tunneling current in GaN Schottky diodes. J. Applied Phys. 101 (2007) 103701.

 1. Lu, H.: Solid-St. Electron. 52 (2008) 817.
2. Wu, T.: Electronics Lett. 44 (2008) 883.
3. Horvath, Z.J.: Applied Surface Sci 256 (2010) 5614.
4. Lin, Y.J.: Thin Solid Films 519 (2010) 829.
5. Ejderha, K.: European Phys. J.-Applied Phys. 68 (2014) Iss. 2.
6. Nirwal, V.S.: Mater. Research Express 3 (2016) 125901.
7. Dan, M.J.: Nano Energy 98 (2022) 107275.

Osvald, J.Polarization effects and energy band diagram in AlGaN/GaN heterostructures. Applied Phys. A 87 (2007) 679-682.

 1. Huang, S.: Inter. Conf. Solid-State Integr. Circuits Technol. Proc., ICSICT, art. no. 4734648 (2008) 692.
2. Huang, S.: Semicond. Sci Technol. 24 (2009) 055005.
3. Jampana, B.R.: Mater. Res. Soc Symp. Proc. 1167 (2009) 3.
4. Faucher, M.: IEEE Inter. Frequency Control Symp. (2011) 1021.
5. Yotsuhashi, S.: Applied Phys. Lett.  100 (2012) 243904.
6. Yotsuhashi, S.: AIP Advan. 2 (2012) 042160.
#  7. Sun, J.: Guangxue Xuebao/Acta Optica Sinica 32 (2012) 0214002.
8. Sharma, N.: J. Comput. Electron. 13 (2014) 503.
9. Sharma, N.: IETE Technical Rev. 33 (2016) 34.
10. Hirose, K.: Japan. J. Applied Phys. 55 (2016) 08NB13.
11. Sharma, N.: J. Nanoelectron. Optoelectron. 11 (2016) 694.
12. Dhakad, S.: Superlatt. Microstr. 111 (2017) 922.
13. Sharma, N.: J. Nanosci Nanotechnol. 18 (2018) 4580.
14. Chen, G.: Applied Phys. Express 12 (2019) 111003.
15. Sharma, N.: IEEE Trans. Electron Dev. 67 (2020) 289.
16. Sharma, N.: J. Electron. Mater.‏ 49 (2020) 5687.
#      17. Sharma, N.: Lecture Notes in Networks and Syst. 204 (2021) 13.
#       18. Gupta, Y.: VLSI and Hardware Implementations using Modern Machine Learning Methods. CRC 2022, pp. 163-179. ISBN 978-100-320-103-8

Osvald, J.Influence of lateral current spreading on the apparent barrier parameters of inhomogeneous Schottky diodes, J. Applied Phys. 99 (2006) 033708.

1. Rouag, N.: Semicond. Sci Technol. 22 (2007) 369.
2. Liu, J.: Acta Physica Sinica 56 (2007) 3483.
3. Chand, S.: In: ASDAM 2008. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P.139.
4. Yildiz, D.E.: J. Applied Phys. 103 (2008) 124502.
5. Yildirim, N.: Microelectr. Engn. 86  (2009) 2270.
6. Bacaksiz, E.: J. Alloys. Compounds 496 (2010) 560.
7. Ru, G.P.: Chinese Phys. B 19 (2010) 097304.
8. Bacaksiz, E.: Thin Solid Films 519 (2011) 3679.
9. Latreche, A.: Inter. J. Numerical Modell. 28 (2015) 231.
10. Latreche, A.: Semicond. Sci Technol. 31 (2016) 085008.
11. Splith, D.: Proc. SPIE 10533 (2018) 105330C.
12. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
13. Polat, O.: J. Phys.-Cond. Matt.‏ 33 (2021) 035704.
14. Splith, D.: Phys. Status Solidi A 218 (2021) 2100121.
15. Amiri, P.: J. Optoelectron. Adv. Mater. 23 (2021) 605.
16. Altindal, S.: J. Mater. Sci-Mater. Electron. 33 (2022) 12210.

Osvald, J.Intersecting behaviour of nanoscale Schottky diodes I-V curves, Solid State Comm. 138 (2006) 39-42.

1. Dokme, I.: Semicond. Sci Technol. 21 (2006) 1053.
2. Tekeli, Z.: J. Applied Phys. 102 (2007) Art. No. 054510.
3. Perez-Garcia, B.: Nano Lett. 7 (2007) 1505.
4. Pakma, O.: Semicond. Sci Technol. 23 (2008) 105014.
5. Kraya, R.: Nano Lett. 10 (2010) 1224.
6. Demirezen, S.: Current Applied Phys. 10 (2010) 1188.
7. Tascioglu, I.: Radiation Phys. Chem. 79 (2010) 457.
8. Song, J.Q.: Surface Sci 604 (2010) 361.
9. Yildirim, N.: Microelectr. Engn. 87 (2010) 2225.
10. Kim, H.: J. Applied Phys. 108 (2010) 074514.
11. Ru, G. P.: Chinese Phys. B 19 (2010) 097304.
12. Demirezen, S.: Rad. Effects Defects Solids 165 (2010) 920.
13. Saadaoui, S.: J. Applied Phys. 110 (2011) 013701.
14. Tascioglu, I.: J. Applied Phys. 109 (2011) 054502.
15. Kraya, R.A.: Applied Phys. Lett. 99 (2011) 053107.
16. Tascioglu, I.; AIP Conf. Proc. 1400 (2011) 307.
#  17. Jiang, Y.: Nanjing Hangkong Hangtian Daxue Xuebao/J. Nanjing Univ. Aeronaut. Astronaut. 43 (2011) 837.
18. Tripathi, S. K.: J. Applied Phys. 111 (2012) 074513.
19. Sharma, M.: Optoelectr. Advanced Mater. 6 (2012) 200.
20. Kim, H.: Semicond. Sci Technol. 27 (2012) 035010.
21. Korucu, D.: Science China-Phys. Mechan. Astron. 55 (2012) 1604.
22. Bouzazi, B.: J. Alloys. Compounds 552 (2013) 469.
23. Kim, H.: J. Electr. Packaging, Trans. ASME 135 (2013) 011010.
24. Wang, M.-Z.: Particle Particle Syst. Character. 30 (2013) 630.
25. Lee, H.: Applied Phys. Lett. 103 (2013) 173103.
26. Arslan, E.: Thin Solid Films 548 (2013) 411.
27. Ruzin, A.: J. Applied Phys. 117 (2015) 164502.
28. Lin, Y.-J.: Current Applied Phys. 15 (2015) 213.
29. Ruzin, A.: J. Applied Phys. 118 (2015) 204502.
30. Oliver, S.M.: Applied Phys. Lett. 109 (2016) 203101.
31. Guo, E.: Langmuir 32 (2016) 10589.
32. Ejderha, K.: Surface Rev. Lett. 24 (2017) 1750052.
33. Liu, Y.: Nanoscale 10 (2018) 3606.
34. Karabulut, A.: Bull. Mater. Sci 42 (2019) 5.
35. Saadaoui, S.: J. Phys. Chem. Solids 132 (2019) 157.
36. Abbas, Y.: Nanotechnol. 31 (2020) 125708.
37. Saadaoui, S.: Mater. Sci Semicond. Process. 115 (2020) 105100.
38. Arslan, E.: J. Mater. Sci-Mater. Electron. 31 (2020) 13167.
39. Jabbari, I.: Chinese J. Phys. 73 (2021) 719.
40. Amiri, P.: J. Optoelectron. Adv. Mater. 23 (2021) 605.
41. Saadaoui, S.: Brazil. J. Phys. 53 (2023) 26.
42. Bengi, S.: J. Mater. Sci-Mater. Electron. 34 (2023) Iss. 3.

Osvald, J.Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I–V curves. Solid-State Electr. 50 (2006) 228-231.

1. Dogan, H.: Semicond. Sci Technol. 21 (2006) 822.
2. Dokme, I.: Semicond. Sci Technol. 21 (2006) 1053.
3. Karatas, S. Nuclear Instrum. Methods Phys. Res. A 566 (2006) 584.
4. Dogan, H.: Applied Surface Sci 253 (2007) 7467.
5. Cimilli, F.E.: Semicond. Sci Technol. 22 (2007) 851.
#   6. Vilada, A.: Revista Mexicana de Fisica 53 (2007) 236.
7. Asubay, S.: Semicond. Sci Technol. 23 (2008) art. no. 035006.
8. Asubay, S.: Applied Surface Sci 254 (2008) 3558.
9. Boyarbay, B.: Microelectron. Engn. 85 (2008) 721.
10. Pakma, O.: Semicond. Sci Technol. 23 (2008) 105014.
11. Guler, G.: Physica B 403 (2008) 2211.
12. Ravinandan, M. : Semicond. Sci Technol. 24 (2009) 035004.
13. Cimilli, F.E.: Physica B 404 (2009) 1558.
14. Kavasoglu, A.S.: J. Phys. D 42 (2009) 145111.
15. Asubay, S.: Vacuum 83 (2009) 1470.
16. Tataroglu, A.: J. Alloys. Compounds 484 (2009) 405.
17. Yildirim, N.: Microelectr. Engn. 86  (2009) 2270.
18. Saglam, M.: Current Applied Phys. 10 (2010) 513.
19. Yildirim, N.: Microelectr. Engn. 87 (2010) 2225.
20. Tripathi, S.K.: J. Mater. Sci 45 (2010) 5468.
21.Yildirim, N.: J. Applied Phys. 108 (2010) 114506.
22. Uslu, H.: J. Applied Phys. 108 (2010) 104501.
23. Uslu, H. J. Applied Polymer. Sci 120 (2011) 322.
24. Pakma, O.: J. Sol-Gel Sci Technol. 58 (2011) 244.
25. Kinaci, B.: Optoelectr. Adv. Mater.-Rapid Comm. 5 (2011) 434.
26. Tascioglu, I.: J. Applied Phys. 109 (2011) 054502.
27. Rahmatallahpur, Sh.: Physica B 406 (2011) 1351.
28. Latreche, A.: Semicond. Sci Technol. 26 (2011) 085003.
29. Kim, H.: Japan. J. Applied Phys. 50 (2011) 105702.
30. Farag, A.A.M.: Synthetic Metals 161 (2012) 2759.
31. Pur, F.Z.: Physica Scripta 86 (2012) 035802.
32. Afandiyeva, I. M.: J. Alloys Compounds 552 (2013) 423.
33. Altuntas, H.: J. Alloys Compounds 577 (2013) 143.
34. Arslan, E.: Thin Solid Films 548 (2013) 411.
35. Bobby, A.: Physica B 431 (2013) 6.
36. Tataroglu, A.: Chinese Phys. B 23 (2014) 057504.
37. Dhibi, O.: Microelectr. Engn. 129 (2014) 24.
38. Ertugrul, R.: Radiation Effects Defects in Solids 169 (2014) 791.
39. Tataroglu, A.: J. Sol-Gel Sci Technol. 71 (2014) 421.
40. Tataroglu, A.: J. Electroceram. 32 (2014) 369.
41. Latreche, A.: Inter. J. Numerical Modell. 28 (2015) 231.
42. Yakuphanoglu, F.: Solar Energy Mater. Solar Cells 133 (2015) 69.
43. Tataroglu, A.: Synthetic Metals 206 (2015) 15.
44. Al-Hazmi, F.: J. Alloys Compounds 653 (2015) 561.
45. Rainy, R.H.: J. Nanoelectron. Optoelectron. 10 (2015) 739.
46. Al-Ghamdi, A.A.: J. Alloys Compounds 650 (2015) 692.
47. Khusayfan, N.M.: J. Alloys Compounds 666 (2016) 501.
48. Khusayfan, N.M.: J. Nanoelectron. Optoelectron. 11 (2016) 723.
49. Ozerli, H.: J. Alloys Compounds 718 (2017) 75.
50. Tataroglu, A.: Silicon 11 (2019) 1275.
51. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
52. Ozdemir, M.C.: Mater. Sci Semicond. Process. 125 (2021) 105629.
53. Duman, S.: Optical Mater. 125 (2022) 112138.

Osvald, J.Ohmic contacts to moderately doped semiconductors—are they really Ohmic or low-barrier Schottky contacts?, Semicond. Sci Technol. 20 (2005) 611-614.

1. Jiang, Y.L.: J. Applied Phys. 101 (2007) 053705.
2. Ghosh, B.: Solid State Sci 11 (2009) 461.
3. Horvath, Z.J.: Applied Surface Sci 256 (2010) 5614.
4. Chattopadhyay, P.: Inter. J. Electr. 99 (2012) 1051.
5. Kim, D.-H.: J. Electron. Mater. 46 (2017) 4750.
6. Banotra, A.: AIP Conf. Proc. 1953 (2018) 100050.

Osvald, J., Kuzmík, J., Konstantinidis, G., Lobotka, P., Georgakilas, A., : Temperature dependence of GaN Schottky diodes I–V characteristics. Microelectronic Engn. 81 (2005) 181-187.

1. Das, S.N.: Vacuum 81 (2007) 843.
2. Chiang, H.P.: Thin Solid Films 515 (2007) 6953.
3. Das, S.N.: J. Phys. D 40 (2007) 7291.
4. Pipinys, P.: Lithuanian J. Phys. 47 (2007) 51.
5. Cho, H.K.: J. Phys. D 41 (2008) 175107.
6. Lu, C.Z.: J. Vacuum Sci Technol. B 26 (2008) 1987.
7. Kim, H.: Applied Phys. Lett.  93 (2008) 192902.
8. Ravinandan, M.: J. Optoelectr. Advanced Mater. 10 (2008) 2787.
9. Quai, R.: Gallium Nitride Electronics. Springer Ser. Mater. Sci. Berlin: Springer-Verlag (2008) Chap. 2. ISBN 978-3-540-71890.
10. Ravinandan, M. : Semicond. Sci Technol. 24 (2009) 035004.
11. Dogan, S.: Physica E 41 (2009) 646.
12. Cinar, K.: J. Applied Phys. 106 (2009) 073717.
13. Yildrim, N.: J. Applied Phys. 108 (2010) 114506.
14. Lin, Y.: Thin Solid Films 519 (2010) 829.
15. Pipinys, P.: Adv. Cond. Matt. Phys. (2010) 526929.
16. Ejderha, K.: Mater. Sci Semicond. Process. 14 (2011) 5.
17. Chen, Y.: Proc. SPIE 7980 (2011) 79801E.
18. Ameur, K.: Sensor Lett. 9 (2011) SI. 2268.
19. Reddy, N.: Bull. Mater. Sci 35 (2012) 53.
20. Peta, K.R.: J. Crystal Growth 378 (2013) 299.
21. Elgawadi, A.: J. Phys. Cond. Matt. 25 (2013) 335803.
22. Grodzicki, M.: Applied Surface Sci 304 (2014) 24.
23. Ejderha, K.: European Phys. J.-Applied Phys. 68 (2014) Iss. 2.
24. Reddy, P.: J. Applied Phys. 116 (2014) 123701.
#     25. Munir, T.: Adv. Mater. Research 895 (2014) 439.
#     26. Wang, R.X.: In Gallium Nitride: Structure, Thermal Properties and Applications. Nova Sci Publ 2014 ISBN: 978-163321388-3. P. 119.
27. Dogan, H.: Physica B 457 (2015) 48.
28. Liu, C.: Comput. Mater. Sci 107 (2015) 170.
29. Tao, X.: Proc. Inter. Symp. Phys. Failure Analysis of Integrated Circuits –  IPFA 2015. Art. no. 7224418, p. 430.
30. Ejderha, K.: Silicon 9 (2017) 395.
31. Tao, X.-H.: Chinese Phys. Lett. 34 (2017) 038501.
32. Turut, A.: J. Optoelectron. Adv. Mater. 19 (2017) 424.
33. Asha, B.: J. Electronic Mater.47 (2018) 4140.
34. Wang, T.-T.: Chinese Phys. Lett. 36 (2019) 057101.
35. Khachariya, D.: J. Applied Phys. 128 (2020) 064501.
36. Reddy, P.: Semicond. Sci Technol. 35 (2020) 055007.
37. Ahmed, N.: Digest J. Nanomater. Biostruct.‏ 15 (2020) 399.
38. Liu, W.: IEEE Electron Dev. Lett.‏ 41 (2020) 1468.
39. Khachariya, D.: Applied Phys. Lett. 118 (2021) 122103.
40. Jadhav, A.: J. Electron Mater. 50 (2021) 3731.
41. Helal, H.: Inter. J. Numer. Modell.-Electron. Networks Dev. Fields (2021) 2916.
42. Ahmed, N.: Physica Scripta 96 (2021) 065211.
43. Deniz, A.R.: J. Mater. Sci-Mater. Electron. 33 (2022 ) 5233.
44. Helal, H.: Europ. Phys. J. Plus 137 (2022) 450.
45. Khachariya, D.: Applied Phys. Lett. 120 (2022) 172109.

Osvald, J.Comment on “Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts”. Solid-State Electronics 48 (2004) 2347-2349.

1. Tao, M.: Solid-State Electronics 48 (2004) 2351.
2. Dobos, L.: Vacuum 82 (2008) 794.
3. Khosravizadeh, S.: Phys. Rev. B 79 (2009) 235203.
4. Lin, Y.J.: J. Phys. D 42 (2009) 165104.
5. Horvath, Z.J.: Applied Surface Sci 256 (2010) 5614.
6. Stamenov, P.: J. Phys.: Conf. Ser. 200 (2010) 072094.
7. Tong, Y.: IEEE Trans. Electron Devices 60 (2013) SI746.
8. Tong, Y.: IEEE Trans. Electron Dev. 61 (2014) 3499.
9. Jaiswal, H.N.: Adv. Mater.‏ 32 (2020) 2002716.

Osvald, J.Electronic properties of a near surface Si δ-doped GaAs under an applied electric field. J. Phys. D: Appl. Phys. 37 (2004) 2655-2659.

1. Dakhlaoui, H.: J. Magnetism Magnetic Mater. 293 (2005) 215.
2. Rodriguez-Vargas, I.: J. Applied Phys. 99 (2006)  Art. No. 033702.
3. Rodriguez-Vargas, I.: Superlattices Microstr. 40 (2006) 100.
#     4. Miteva, A.M.: Revista Mexicana de Fisica 53 (2007) 74.
5. Miteval, A.M.: PIERS 2008 Hangzhou: Progress in Electromagn. Research Symp. 2008. P. 979.
6. Ozturk, E.: Chinese Phys. Lett. 25 (2008) 1415.
7. Ozturk, E.: European Phys. J.-Applied Phys. 41 (2008) 195.
8. Ozturk, E.: Superlatt. Microstruct. 46 (2009) 752.
9. Ozturk, E.: Chinese Phys. Lett. 27 (2010) 077302.
10. Dakhlaoui, H.: Superlatt. Microstruct. 77 (2015) 196.
11. Sari, H.: Chem. Phys. 487 (2017) 11.
12. Dakhlaoui, H.: J. Comput. Electron. 21 (2022) 378.
13. Sayrac, M.: Europ. Phys. J. Plus 137 (2022) 840.
14. Sahu, A.K.: Lecture Notes in Electrical Engn. 904 (2023) 79.

Osvald, J.Self-consistent analysis of Si δ-doped layer placed in a non-central position in GaAs structure. Physica E 23 (2004) 147-151.

1. Blacksberg, J.: Applied Phys. Lett. 87 (2005)  254101.
2. Khabarov, Y.V.: Semiconductors 40 (2006) 558.
3. Rodriguez-Vargas, I.: J. Applied Phys. 99 (2006) Art. No. 033702.
4. Rodriguez-Vargas, I.: Superlattices Microstr. 40 (2006) 100.
5. Ozturk, E.: Chinese Phys. Lett. 25 (2008) 1415.
6. Ozturk, E.: Superlatt. Microstruct. 46 (2009) 752.
7. Dakhlaoui, H.: J. Applied Phys. 117 (2015) 135705.
8. Dakhlaoui, H.: Superlatt. Microstruct. 77 (2015) 196.
9. Almansour, S.: Chinese Phys. Lett. 33 (2016) 027301.
10. Dakhlaoui, H.: Optik 157 (2018) 1342.
11. Chrafih, Y.: Europ. Phys. J.-Applied Phys. 86 (2019) 20101.
12. Dakhlaoui, H.: Results in Phys. 15 (2019) 102618.
13. Dakhlaoui, H.: Superlatt. Microstruct. 136 (2019) 106292.
14. Ungan, F.: Physica Scripta 95 (2020) 055808.
15. Rodriguez-Magdaleno, K.A.: Superlatt. Microstruct. 156 (2021) 106988.
16. Dakhlaoui, H.: J. Comput. Electron. 21 (2022) 378.
17. Dakhlaoui, H, H.: Europ. Phys. J. Plus 137 (2022) 526.
18. Dakhlaoui, H.: Physica E 147 (2023) 115623.

Osvald, J. and Horvath, Z.: Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer, Applied Surface Sci 234 (2004) 349-354.

1. Dokme, I.: Semicond. Sci Technol. 21 (2006) 1053.
2. Ozdemir, A.F.: Semicond. Sci Technol. 21 (2006) 298.
3. Biber, M.: Semicond. Sci Technol. 21 (2006) 1.
4. Karatas, S.: Applied Surface Sci 252 (2006) 2209.
5. Chand, S.: Physica B 390 (2007) 179.
6. Duman, S.: Applied Surface Sci 253 (2007) 3899.
7. Aydin, M.E.: J. Applied Phys. 102 (2007) Art. No. 043701
8. Tekeli, Z.: J. Applied Phys. 102 (2007) Art. No. 054510.
9. Gullu, O.: Applied Surface Sci 253 (2007) 7246.
10. Dogan, H.: Applied Surface Sci 253 (2007) 7467.
11. Cimilli, F.E.: Semicond. Sci Technol. 22 (2007) 851.
12. Asubay, S.: Semicond. Sci Technol. 23 (2008) art. no. 035006
13. Asubay, S.: Applied Surface Sci 254 (2008) 3558.
14. Aydin, M.E.: Physica B 403 (2008) 131.
15. Gullu, O.: Microelectr. Engn. 85 (2008) 2250.
16. Gullu, O.: Thin Solid Films 516 (2008) 7851.
17. Pakma, O.: J. Applied Phys. 104 (2008) 014501.
18. Guler, G.: Physica B 403 (2008) 2211.
19. Duman, S.: Semicond. Sci Technol. 23 (2008) 075042.
20. Pakma, O.: Semicond. Sci Technol. 23 (2008) 105014.
21. Cimilli, F.E.: J. Materials Sci 20 (2009) 105-112.
22. Toumi, S.: Microelectr. Engn. 86 (2009) 303.
23. Dogan, S.: Physica E 41 (2009) 646.
24. Kumar, A.A.: Superlatt. Microstruct. 45 (2009) 22.
25. Korkut, H.: Microelectr. Engn. 86 (2009) 111.
26. Guler, G.: Physica B 404 (2009) 1494.
27. Reddy, M.B.: Current Applied Phys. 9 (2009) 972.
28. Farag, A.A.M.: Inter. J. Hydrogen Energy 34 (2009) 4906.
29. Altuntas, H.: Microelectr. Reliability 49 (2009) 904.
30. Asubay, S.: Vacuum 83 (2009) 1470.
31. Cimilli, F.E.: Physica B 404 (2009) 1558.
32. Ejderha, K.: J. Alloys. Compounds 484 (2009) 870.
33. Yildirim, N.: Microelectr. Engn. 86  (2009) 2270.
34. Altuntas, H.: Mater. Sci Semicond. Process. 12 (2009) 224.
35. Saglam, M.: Current Applied Phys. 10 (2010) 513.
36. Ucar, N.: Superlattices Microstr. 47 (2010) 586.
37. Demirezen, S.: Current Applied Phys. 10 (2010) 1188.
38. Ejderha, K.: Superlatt. Microstr. 47 (2010) 241.
39. Dokme, I.: Microelectr. Reliability 50 (2010) 39.
40. Guzeldir, B.: J. Alloys Compounds 506 (2010) 388.
41. Lin, Y.-J.: Thin Solid Films 519 (2010) 829.
42. Gullu, O.: J. Alloys Compounds 509 (2011) 571.
43. Saadaoui, S.: J. Applied Phys. 110 (2011) 013701.
44. Mathai, A.J.: IEEE Trans. Electron Devices 58 (2011) 4283.
45. Altuntas, H.: Semiconductors 45 (2011) 1286.
46. Demircioglu, O.: Microelectr. Engn. 88 (2011) 2997.
47. Karatas, S.: Microelectr. Reliability 51 (2011) 2205.
48. Dokme, I.: J. Applied Polymer Sci 125 (2012) 1185.
49. Aydogan, S.: Microelectr. Reliability 52 (2012)1362.
50. Oylumluoglu, G.: J. Alloys Comp. 523 (2012) 16.
51. Peta, K.R.: Microelectr. Engn. 93 (2012) 100.
52. Tripathi, S. K.: J. Applied Phys. 111 (2012) 074513.
53. Jo, H.-J.: J. Korean Phys. Soc 60 (2012) 787.
54. Sharma, M.: Optoelectr. Advanced Mater. 6 (2012) 200.
55. Soylu, M.: Superlatt. Microstruct. 52 (2012) 470.
56. Sharma, M.: J. Applied Phys. 112 (2012) 024521.
57. Korucu, D.: Mater. Sci Semicond. Process. 15 (2012) 480.
58. Kinaci, B.: Mater. Sci Semicond. Process. 15 (2012) 531.
59. Arslan, E.: Microelectr. Engn. 100 (2012) 51.
#   60. Sankar Naik, S.: Advan. Mater. Lett. 3 (2012) 188.
61. Afandiyeva, I.M.: J. Alloys Comp. 552 (2013) 423.
62. Yuksel, O.F.: Thin Solid Films 534 (2013) 614.
63. Korucu, D.: Physica B 414 (2013) 35.
64. Korucu, D.: Thin Solid Films 531 (2013) 436.
65. Korkut, H.: Nano-Micro Lett. 5 (2013) 34.
66. Kim, H.: J. Electr. Packaging, Trans. ASME 135 (2013) 011010.
67. Yeganeh, M.A.: J. Semicond. 34 (2013) 082002.
68. Reddy, M.S.P.: J. Applied Polymer Sci 131 (2014) 39773.
69. Ozerli, H.: Mater. Research Bull. 53 (2014) 211.
70. Bestas, A.N.: Applied Surface Sci 318 (2014) 280.
71. Biyikli, N.: Physica Scripta 89 (2014) 095804.
72. Dogan, H.: Physica E 63 (2014) 186.
73. Guzeldir, B.: J. Alloys Comp. 627 (2015) 200.
74. Mosbahi, H.: J. Optoelectron. Adv. Mater. 17 (2015) 767.
75. Dey, A.: J. Mater. Sci-Mater. in Electron. 27 (2016) 6325.
76. Nirwal, V.S.: Mater. Research Express 3 (2016) 125901.
77. Güzeldir, B.: J. Phys.: Conf. Ser. 707 (2016) 012016.
78. Saǧlam, M.: J. Phys.: Conf. Ser. 707 (2016) 012025.
79. Sevgili, O.: Proc. Nat. Acad. Sci India Sec. A 87 (2017) 409.
80. Karabulut, A.: J. Semicond. 38 (2017) 054003.
81. Das, B.: ACS Applied Mater. Interf. 9 (2017) 22788.
82. Kim, H.: Korean J. Mater. Res. 27 (2017) 362.
83. Turut, A.: J. Optoelectron. Adv. Mater. 19 (2017) 424.
84. Al-Dharob, M.H.: Materials Sci Semicond Process. 85 (2018) 98.
*    85. Çatır, F.E.C.:  2nd Inter. Congress on Semicond. Mater. Devices – ICSMD 2018, p. 102-111. ISBN 978-605-245-277-6.
86. Ulusan, A. Buyukbas.: Indian J. Phys. 92 (2018) 1397.
87. Kumar, A.: Superlatt. Microstruct. 128 (2019) 373.
88. Ben Nasrallah, T.: Engn. Technol. Applied Sci Res. 9 (2019) 4695.
89. Saadaoui, S.: Materials Sci Semicond Process. 115 (2020) 105100.
90. Ahmed, N.: Digest J. Nanomater. Biostruct.‏ 15 (2020) 399.
91. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
92. Oksuzoglu, F.: J. Photonics for Energy 10 (2020) 025502.
93. Altan, H.: Superlatt. Microstruct. 146 (2020) 106658.
94. Baydilli, E. E.: J. Electr. Mater. 49 (2020) 7427.
95. Baydilli, E. E.: J. Mater. Sci-Mater. Electr.‏ 31 (2020) 17147.
96. Baydilli, E. E.: Physica B‏ 598 (2020) 412457.
97. Helal, H.: Europ. Phys. J. Plus 135 (2020) 895.
98. Biswas, A.: J. Phys. Chem. Solids 150 (2021) 109878.
99. Sevgili, O.: Microelectron. Reliab. 117 (2021) 114040.
100. Kacus, H.: J. Mater. Sci-Mater. Electr.‏ 32 (2021) 6586.
101. Sevgili, O.: J. Mater. Sci-Mater. Electr.‏ 32 (2021) 10112.
102. Turut, A.: J. Mater. Sci-Mater. Electr.‏ 32 (2021) 22680.
103. Ejderha, K.: J. Electr. Mater. 50 (2021) 6741.
104. Helal, H.: Materials 14 (2021) 5909.
105. Amiri, P.: J. Optoelectron. Adv. Mater. 23 (2021) 605.
106. Ashery, A.: ECS J. Solid State Sci Technol. (2022) 041009.
107. Helal, H.: Europ. Phys. J. Plus 137 (2022) 450.
108. Coskun, F.M.: J. Mater. Sci-Mater. Electr. ‏ 33 (2022) 19138.
109. Lee, S.: Adv. Function. Mater. 32 (2022) 2204383.
110. Saadaoui, S.: Brazil. J. Phys. 53 (2023) 26.
111. Efeoglu, H.: J. Electron. Mater. 52 (2023) 1410.
112. Bodur, M.C.: Optics Laser Technol. 162 (2023) 109251.

Osvald, J.New aspects of the temperature dependence of the current in inhomogeneous Schottky diodes. Semicond. Sci Technol. 18 (2003) L24-L26.

 1. Chand, S.: Semicond. Sci Techn. 19 (2004) 82.
#      2. Chand, S.: ASDAM 2004. Piscataway: IEEE 2004. P.  251.
3. Blasciuc-Dimitriu, C.: Semicond. Sci Technol. 20 (2005) 10.
4. Chand, S.: Applied Surface Sci 252 (2005) 358.
5. Chand, S.: Semicond. Sci Technol. 20 (2005) 1143.
6. Rouag, N.: Semicond. Sci Technol. 22 (2007) 369.
7. Gullu, O.: Applied Surface Sci 253 (2007) 7246.
8. Aydin, M.E.: Physica B 403 (2008) 131.
9. Gullu, O.: Microelectr. Engn. 85 (2008) 2250.
10. Pakma, O.: Semicond. Sci Technol. 23 (2008) 105014.
11. Yildirim, N.: Microelectr. Engn. 86  (2009) 2270.
12. Sonmezoglu, S.: Physica B 405 (2010) 287.
13. Vural, O.: Current Applied Phys. 10 (2010) 761.
14. Ashery, A.: Microelectron. 87 (2010) 2218.
15. Ru, G.P.: Chinese Phys. B 19 (2010) 097304.
16. Gullu, O.: J. Alloys Compounds 509 (2011) 571.
17. Demircioglu, O.: J. Alloys Compounds 509 (2011) 6433.
18. Devi, V.L.: Canadian J. Phys. 90 (2012) 73.
19. Fiat, S.: J. Alloys Comp. 585 (2014) 178.
20. Karatas, S.: Mater. Sci Semicond. Process. 28 (2014) 135.
21. Guzeldir, B.: J. Alloys Comp. 627 (2015) 200.
22. Latreche, A.: Inter. J. Numerical Modell. 28 (2015) 231.
23. Klyuev, A.V.: Fluctuation Noise Lett. 14 (2015) 1550029.
24. Jyothi, I.: Mater. Sci Semicond. Process. 39 (2015) 390.
25. Karabulut, A.: Surface Rev. Lett. 26 (2019) 1950045.
26. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
27. Ozdemir, M.C.: Mater. Sci in Semicond. Process.‏ 125 (2021) 105629.
28. Splith, D.: Phys. Status Solidi A 218 (2021) 2100121.

Osvald, J.Doping concentration dependence of apparent parameters of Schottky diodes with low-barrier defects. Semicond. Sci Technol. 16 (2001) 197-201.

#    1. Modi, B.P.: J. Nano- and Electr. Phys. 3 (1 PART4) (2011) 680.

Osvald, J.Schottky diodes with a δ-doped near-surface layer. J. Applied Phys. 90 (2001) 6205-6209.

#     1. Horvath, Zs. J.: Proc. SPIE 4746 (2002) 265.
2. Shashkin, V.: J. Applied Phys. 95 (2004) 2190.
3. Roccaforte, F.: Applied Phys. Lett. 85 (2004) 6152.
4. Roccaforte, F.: J. Applied Phys. 97 (2005)  123502.
5. Horvath, Z.J.: Current Applied Phys. 6 (2006) 205.
6. Mramor, M.: J. Phys. D 40 (2007) 1351.
7. Al-heuseen, K.: AIP Conf. Proc. 1250 (2010) 77.

Osvald, J.: Delta-doped layer influence on Schottky diodes parameters. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 391-394.

   1. Chiu, H.-C.: IEEE Trans. Electron Dev. 55 (2008) 256.

Osvald, J.Response to “Comment on ‘Numerical study of electrical transport in inhomogeneous Schottky diodes’ ” [J. Appl. Phys. 88, 7366 (2000)]. J. Applied Phys. 88 (2000) 7368-7369.

1. Jiang, Y.L.: Chinese Phys. Lett. 19 (2002) 553.
*    2. Rossi, R.C.: PhD thesis. Pasadena, California Inst. of Technol. 2002.
3. Ru, G.P.: Solid-State Electron. 49 (2005) 606.
4. Yildirim, Y.N.: J. European Phys. J.-Applied Phys. 45 (2009) 10302.
5. Gorji, M.S.: Critical Rev. In Solid State Mater. Sci 40 (2015) 197.
6. Mahato, S.: AIP Adv. 7 (2017) 085313.
7. Chang Y.: Chin. J.Electron. 28 (2019) 497.

Osvald, J.: Numerical study of electrical transport in inhomogeneous Schottky diodes, J. Applied Phys. 85 (1999) 1935-1942.

1. Tung, R.T.: J. Applied Phys. 88 (2000) 7366.
2. Rossi, R. C.: Applied Phys. Lett. 77 (2000) 2698.
3. Dmitriev, S.G.: J. Comm. Technol. Electr. 45 (2000) 201.
4. Bezak, V.: Czechosl. J. Phys. 51 (2001) 829.
5. Tung, R.T.: Materials Sci Engn. R 35 (2001) 1.
6. Rossi, R.C.: J. Phys. Chemistry B 105 (2001) 12303.
*     7. Pelucchi, E.: Ph.D. Thesis. Bremen: Univ. Bremen 2001.
8. Guliants, E.A.: Applied Phys. Lett. 80 (2002) 1474.
9. Zhdanov, V.P.: Surface Sci 512 (2002) L331.
10. Karpov, V.G.: Applied Phys. Lett. 80 (2002) 4256.
11. Jiang, Y.L.: Chinese Phys. Lett. 19 (2002) 553.
12. Karpov, V.G.: Conf. Record IEEE Photovoltaic Specialists Conf. (2002) 708.
*    13. Rossi, R.C.: PhD Thesis. Pasadena, California Inst. of Technol. 2002.
14. Bai, S.: Mater. Research Soc. Symp. – Proc. 742 (2002) 151.
15. Ru, G.P.: Solid-State Electron. 49 (2005) 606.
16. Aydogan, S.: Polymer 46 (2005) 10982.
17. Dogan, H.: Semicond. Sci Technol. 21 (2006) 822.
18. Pelucchi, E.: J. Vacuum Sci Technol. B 24 (2006) 1259.
19. Aydin, M.E.: Applied Surface Sci 253 (2006) 1304.
20. Bozhkov, V.G.: J. Comm. Technol. Electron. 52 (2007) 87.
21. Dogan, H.: Applied Surface Sci 252 (2007) 7467.
22. Cimilli F.E., Semicond. Sci Technol. 22 (2007) 851.
23. Mattheis, J.: J. Applied Phys. 101 (2007) 113519.
24. Asubay, S.: Semicond. Sci Technol. 23 (2008) art. no. 035006
25. Parish, G.: Solid-State Electron. 52 (2008) 171.
26. Dogan, H.: Microelectron. Engn. 85 (2008) 655.
27. Guler, G.: Physica B 403 (2008) 2211.
28. Yildirim, Y.N.: J. European Phys. J.-Applied Phys. 45 (2009) 10302.
29. Cimilli, F.E.: J. Materials Sci 20 (2009) 105.
30. Korkut, H. : Microelectr. Engn. 86 (2009) 111.
31. Cimilli, F.E.: Physica B 404 (2009) 1558.
32. Yildirim, N.: Inter. J. Modern Phys. B 23 (2009) 5237.
33. Yildirim, N.: Microelectr. Engn. 86  (2009) 2270.
34. Ejderha, K.: J. Alloys. Compounds 484 (2009) 870.
35. Guzeldir, B.: J. Alloys Compounds, 506 (2010) 388.
36. Yıldırım. N.: J. Applied Phys. 108 (2010) 114506.
#    37. Ejderha, K.: Superlatt. Microstr. 47 (2010) 241.
38. Guzeldir, B.: J. Phys. Chem. Solids 72 (2011) 1506.
#   39. Güzeldir, B.: Microelectr. Reliab. 51 (2011) 2179.
#   40. Güzeldir, B.: Turkish J. Phys. 35 (2011) 1.
41. Kang, M.-S.: Nanoscale Research Lett. 7 (2012) 1.
42. Tecimer, H.: Sensors Actuators A 185 (2012) 73.
43. Chand, S.: ASDAM 2012. (2012) art. no. 6418548, pp. 95.
44. Bobby, A.: Physica B 431 (2013) 6.
45. Benamara, M.: J. Alloys Comp. 603 (2014) 197.
46. Biyikli, N.: Physica Scripta 89 (2014) 095804.
47. Chand, S.: Environment. Sci Engn. 2014. P. 243.
48. Guzeldir, B.: J. Alloys Comp. 627 (2015) 200.
49. Latreche, A.: Inter. J. Numerical Modell. 28 (2015) 231.
50. Gorji, M.S.: Critical Rev. In Solid State Mater. Sci 40 (2015) 197.
51. Das, M.: RSC Adv. 5 (2015) 101582.
52. Gullu, O.: Acta Phys. Polonica A 128 (2015) 383.
53. Das, M.: J. Electron. Mater. 45 (2016) 4293.
54. Kaushal, P.: Inter. J. Electron. 103 (2016) 937.
55. Dey, A.: J. Mater. Sci-Mater. in Electron. 27 (2016) 6325.
56. Zheng, H.: Sci Rep. 6 (2016) 25234.
57. Cavdar, S.: J. Electron. Mater. 45 (2016) 3908.
58. Kahveci, O.: Surface Rev. Lett. 24 (2017) 1750047.
59. Karabulut, A.: J. Semicond. 38 (2017)054003.
60. Li, L.: Superlatt. Microstr. 123(2018) 274.
61. Bhattacharjee, S.: Physica B 547 (2018) 101.
62. Li, X.: IEEE Electron Device Lett.‏ 41 (2020) 601.
63. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
64. Ozdemir, M.C.: Mater. Sci in Semicond. Process.‏ 125 (2021) 105629.
65. Liu, D.-P.: Chinese Phys. B 30 (2021) 038101.
66. He, L.: IEICE Electron. Express 18 (2021) 20210332.
67. Li, L.A.: IEEE Sensors J. 22 (2022) 1933.
#   68. Devi, A.V.N.: IEEE Inter. Conf. Emerg. Electron. ICEE 2022.

Osvald, J. and Burian, E.: C-V dependence of inhomogeneous Schottky diodes Solid State Electron. 42 (1998) 191.

1. Jones, F.E.: J. Applied Phys. 90 (2001) 1001.
2. Lonergan, M.C.: J. Chemistry Phys. 115 (2001) 433.
3. Shigiltchoff, O.: Materials Sci Forum 433-4 (2002) 705.
*    4. Rossi, R.C.: PhD thesis. Pasadena: California Inst. Technol. (2002).
#    5. Bai, S.: Mater. Research Soc. Symp. – Proc. 742 (2002) 151.
6. Moscatelli, F. Mater. Sci Forum 457-460 (2004) 993.
7. Roy, S.: Solid State Sci 6 (2004) 377.
8. Aydogan, S.: Polymer 46 (2005) 563.
9. Altindal, S.: Solar Energy Mater. Solar Cells 85 (2005) 345.
10. Kanbur, H.: Applied Surface Sci 252 (2005) 1732.
11. Selcuk, A.B.: Physica B 396 (2007) 181.
12. Aydogan, S.: Microelectronic Engn. 85 (2008) 278.
13. Bengi, A.: Vacuum 83 (2008) 276.
14. Bengi, A.: Optoelectr. Advanced Mater. 3 (2009) 1155.
15. Durmus, P.: J.  Optoelectron. Adv. Mater. 12 (2010) 1472.
16. Aydogan, S.: Solid State Sci 13 (2011) 1369.
17. Guzeldir, B.: Superlatt. Microstr. 52 (2012) 416.
18. Karatas, S.: Superlatt. Microstr. 64 (2013) 483.
19. Fouad, S.S.: Mater. Res. Bull. 49 (2014) 369.
20. Orak, I.: Mater. Res. Bull. 61 (2015) 463.
21. Orak, I.: Current Applied Phys. 15 (2015) 1054.
22. El-Amin, A. A.: Silicon 9 (2017) SI47.
23. Nikravan, A.: J. Electronic Mater.46 (2017) 5728.
24. Yeriskin, S.A.: J. Material. Sci-Mater. Electr. 28 (2017) 14040.
25. Korucu, D.: Silicon 11 (2019) 1055.
26. Sevgili, O.: J. Phys. Chem. Solids 136 (2020) 109128.
27. Orak, I.: J. Electronic Mater.49 (2020) SI402.
28. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.

Lalinský, T., Breza, J., Vogrinčič, P., Osvald, J., Mozolová, Ž., Šišolák, J., : Iridium-based multilayer contacts to n-GaAs Solid State Electron. 42 (1998) 205.

*     1. Dubecký, F.: APCOM 2015. P. 216.

Osvald, J. and Burian, E.: C-V dependencies of inhomogeneous schottky diodes. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 177.

     1. Horvath, Zs.: Proc. SPIE 3359 (1997) 65.
*   2. Horvath, Z.: Physics of Semicond. Devices 2 . New Delphi: Narosa Publ House 1998. P. 1085.

Osvald, J. and Dobročka, E.: Generalized approach to the parameter extraction from Schttky diodes I.-V. characteristics Semicond. Sci Technol. 11 (1996) 1198-1202.

 1. LeLay, G.: J. de Physique IV 7 (1997) 115.
*     2. Jayavel, P.: In: Phys. Semicond. Devices 1. New Delphi: Narosa Publ House 1998. P. 321.
*     3. Horvath, Zs.: In: Phys. Semicond. Devices 2. New Delphi: Narosa Publ House 1998. P. 1085.
4. Ortizconde, A.: Solid-State Electr. 43 (1999) 845.
5. Bezak, V.: Czechosl. J. Phys. 51 (2001) 829.
6. Wong, H.: Proc. IEEE Hong Kong Electr. Dev. Meeting 2001. P. 38.
7. Ferhat-Hamida, A.: Solid-St. Electron. 46 (2002) 615.
*     8. Rossi, R.C.: PhD thesis. Pasadena: California Inst. Technol. 2002.
9. Biber, M.: Semicond. Sci Technol. 21 (2006) 1.
10. Gür, E.: J. Phys.: Cond. Matt. 19 (2007) 196206.
11. Bezak, V.: J. Mathem. Phys. 48 (2007)  no. 11.
#    12. Baranov, V.V.: ESTC 2006 – 1st Electr. Systemintegration Technol. Conf. 1, (2007) art. no. 4060743, pp. 324-327.
13. Gullu, O.: Applied Surface Sci 254 (2008) 3039.
14. Bezak, V.: J. Phys. A 41 (2008) 025301.
15. Gullu, O.: J. Mater. Sci 19 (2008) 986.
16. Liu, C.C.: Solid-State Electron. 52 (2008) 839.
17. Yildirim, Y.N.: J. European Phys. J.-Applied Phys. 45 (2009) 10302.
18. Yildirim, N.: Inter. J. Modern Phys. B 23 (2009) 5237.
19. Ejderha, K.: J. Alloys. Compounds 484 (2009) 870.
20. Kavasoglu, A.S.: Microelectr. Engn. 87 (2010) 108.
21. Ejderha, K.: Superlatt. Microstr. 47 (2010) 241.
22. Gullu, O.: European Phys. J. 50 (2010) 10401.
23. Laloe, J. B.: Applied Phys. Lett. 97 (2010) 222105.
24. Latreche, A.: Semicond. Sci Technol. 26 (2011) 085003.
25. Guzeldir, B.: AIP Conf. Proc. 1400 (2011) 56.
26. Sellai, A.: Semicond. Sci Technol. 27 (2012) 035014.
27. Sellai, A.: IEEE Mediterranean Electrotechn. Conf.-MELECON (2012) 179.
28. Efeoglu, H.: Inter. J. Modern Phys. B 27 (2013) 1350088.
29. Korucu, D.: Inter. J. Electron. 101 (2014) 1595.
30. Klyuev, A.V.: Fluctuation Noise Lett. 14 (2015) 1550029.
31. Munthali, K.V.: J. Electronic Mater. 44 (2015) 3265.
32. Orak, I.: Current Applied Phys. 15 (2015) 1054.
33. Latreche, A.: Semicond. Sci Technol. 31 (2016) 085008.
34. Toumi, S.: Solid-State Electron. 122 (2016) 56.
35. Turut, A.: J. Semicond. 37 (2016) UNSP 044001.
36. Dhimmar, J. M.: Mater. Today-Proc. 3 (2016) 1658.
37. Güzeldir, B.: J. Phys.: Conf. Ser. 707 (2016) 012016.
38. Saǧlam, M.: J. Phys.: Conf. Ser. 707 (2016) 012025.
39. Yang, F.: J. Infrared Millim. Terahertz Waves 38 (2017) 630.
40. Latry, O.: J. Semicond. 38 (2017) 014007.
41. Arsel, I.: J. Non-Oxide Glasses 9 (2017) 33.
42. Belgacem, C.H.: Silicon 10 (2018) 1469.
43. Toumi, S.: Indian J. Phys. 93 (2019) 1155.
44. Toumi, S.: Physica B‏ 585 (2020) 412125.
45. Wang, Z.: Phys. Status Solidi A 217 (2020) 1901018.
46. Latreche, A.: J. Active Passive Electron. Dev. 15 (2020) 43.
47. Latreche, A.: Semicond. Phys. Quantum Electr. Optoelectr. 23 (2020) 271.
48. Skachkov, D.: Phys. Rev. B 104 (2021) 045429.
49. Toumi, S.: Applied Phys. A 27 (2021) 661.
50. Filali, W.: Superlatt. Microstr. 160 (2021) 107085.
51. Aazou, S.: Energies 15 (2022) 1667.
#      52. Toumi S.: In Power Electronics for Next-Generation Drives and Energy Systems: Converters and control for drives. IET Digital Lib. 2022. ISBN-13: 978-1-83953-468-3

Lalinský, T., Osvald, J., Machajdík, D., Mozolová, Ž., Šišolák, J., Constantinidis, G., Kobzev, A., : High-temperature stable Ir-Al/n-GaAs Schottky diodes: Effect of the barrier height controlling J. Vacuum Sci Technol. 14 (1996) 657.

1. Elkhakani, M.A.: J. Vacuum Sci Technol. A 16 (1998) 885.
2. Chen, C.P.: J. Vacuum Sci Technol. B 17 (1999) 432.
*   3. Venger, E.F.: Mežfaznyje vzaimodeistvija i mechanizmy degradacii v strukturach metall-InP i metall-GaAs. Kyjev: Nac. Akad. Nauk Ukrajiny 1999.
4. Jang, J.H.: Electronics Lett. 40 (2004) 1550.
5. Jang, J.H.: Electronics Lett. 40 (2004) 77.
6. Jang, J.H.: J. Electrochem. Soc. 154 (2007) H389.
7. Zenkin, S.: Surface Coat. Technol. 412 (2021) 127038.

Lalinský, T., Osvald, J., Breza, J., Vogrinčič, P., Mozolová, Ž., Šišolák, J., : Indium-based multilayer contact systems to n-GaAs. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 33.

*     1. Venger, E.F.: Mežfaznyje vzaimodeistvija i mechanizmy degradacii v strukturach metall-InP i metall-GaAs. Kyjev: NAN Ukrain 1999.

Osvald, J., Hricovini, K., LeLay, L., Aristov, V., : Pb/Si(111)1y1-H Schottky barrier height, Fizika A 4 (1995) 191.

1. Horvath, Z.J.: Vacuum 46 (1995) 963.
2. Chan, T.-L.: Solid State Comm. 217 (2015) 43.
3. Thebe, M.J.: Mater. Sci Engn. B 273 (2021) 115392.

Dobročka, E., Osvald, J., : Response to „Comment on Influence of barrier height distribution on the parameters of Schottky diodes“ Applied Phys. Lett. 66 (1995) 3069.

   1. Bezak, V.: J. Mathem. Phys. 48 (2007)  no. 11.
2. Bezak, V.: J. Phys. A 41 (2008) 025301

Aristov, V., Le Lay, G., Soukiassian, P., Hricovini, K., Bonnet, J., Osvald, J., Olsson, O., : Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum Europhys. Lett. 26 (1994) 359.

1. Betti, M.G.: Europhys. Lett. 32 (1995) 235.
2. Olsson, L.O.: Phys. Rev B 52 (1995) 1470.
3. Flores, F.: Surface Rev. Lett. 2 (1995) 513.
4. Betti, M.G.: Phys. Rev B 53 (1996) 13605
5. Betti,  N.G.: J. Electron. Spectr. Relat. Phys. 76 (1995) 459.
6. Neuhold, G.: Phys. Rev. B 54 (1996) 8623.
7. Betti, M.G.: Phys. Rev. B 57 (1998) 4544.
8. Biagi, R.: Surface Sci 404 (1998) 547
9. Karlsson, H.S.: Surface Sci 404 (1998) 590
10. Karlsson, H.S.: Surface Sci 407 (1998) L687
11. Morgenstern, M.: Phys. Rev. B 62 (2000) 7257.
12. Morgenstern, M.: Phys. Rev. B 61 (2000) 13805.
13. Modesti, S.: Surface Sci 447 (2000) 133.
14. Biagi, R.: Phys. Rev. B 64 (2001) 195407.
15. Getzlaff, M.: Phys. Rev. B 63 (2001) 205305.
16. Schieffer, P.: Surface Sci 497 (2002) 341.
17. Morgenstern, M.: Phys. Rev. B 65 (2002) 155325.
18. Abe, S.: Phys. Rev. B 66 (2002) 205309.
19. Morgenstern, M.: Japan. J. Applied Phys. 42 (2003) 4809.
20. Biagi, R.: Phys. Rev. B 67 (2003) 155325.
21. Rickert, K.A.: Applied Phys. Lett. 82 (2003) 3254.
22. Morgenstern,  M.: Surface Rev. Lett. 10 (2003) 933.
23. Tsuji, Y.: Applied Phys. Lett. 87 (2005) 062103, also cond. matt. 0507135.
24. Tsuji, Y.: Physica E 34 (2006) 156.
25. Masutomi, R.: Applied Phys. Lett. 90 (2007) 202104.
26. Mochizuki, T.: Phys. Semicond. 893 (2007) 1475.
27. Wu, C.L.: Phys. Rev. Lett. 101 (2008) 106803.
28. Minowa, M.: Phys. Rev. B 77 (2008) 233301.
29. Masutomi, R.: AIP Conf. Proc. 1199 (2009) 27.
30. Becker, S.: Phys. Rev. B 81 (2010) 155308.
31. Takeshita, N.: J. Applied Phys. 107 (2010) 033702.
32. Philipp, P.: Surface Interface Anal. 42 (2010) 1499.
33. Morgenstern, M.: Quantum Materials: Lateral Semicond. Nanostruct., Hybrid Systems and Nanocrystals. Springer 2010. ISBN 978-3-642-10552-4. P. 217-243.
34. Okamoto, T.: J. Applied Phys. 109 (2011) 102416.
35. Becker, S.: Phys. Rev. Lett. 106 (2011) 156805.
36. Morgenstern, M.: Physica E 44 (2012) 1795.
37. Floehr, K.: Applied Phys. Lett. 101 (2012) 243101.
38. Zhang, X.: Sensors Actuators B 209 (2015) 456.
#  39. Brede, J.: In Handbook of Spintronics. Springer 2016 ISBN: 978-94-007-6891-8. P. 757.
40. Khanbabaee, B.: J. Applied Phys. 120 (2016) 145703.
41. Zhang, T.: Phys. Rev. B 97 (2018) 214514.
42. Gambaryan, K.M.: ACS Applied Electron. Mater. 2 (2020) 646.
43. Vrubel, I.I.: Phys. Chem. Chem. Phys. 23 (2021) 4811.

Aristov, V., Le Lay, G., Soukiassian, P., Hricovini, K., Bonnet, J., Osvald, J., Olsson, O., : Cs-induced highest EF jump above InAs(110) conduction-band minimmum J. Vacuum Sci Technol. B 12 (1994) 2709.

     1. Betti, N.G.: J. Electron Spectrosc. Relat. 76 (1995) 459.
2. Martinelli, V.: Surface Sci 391 (1997) 73.
3. Grupp, C.: Surface Science 408 (1998) 160
4. Frost, F.: J. Applied Phys. 85 (1999) 8378.
5. Betti, M.G.: Solid State Comm. 110 (1999) 661.
6. Morgenstern, M.: Phys. Rev. B 61 (2000) 13805.
7. Betti, M.G.: Surface Sci 454 (2000) 539.
#    8. Frost, F.: Diffusion and Defect Data A 183 (2000) 127.
9. Betti, M.G.: Surface Sci 477 (2001) 35.
10. Getzlaff, M.: Phys. Rev. B 63 (2001) 205305.
11. Betti, M.G.: Phys. Rev. B 63 (2001)  155315.
12. Morgenstern, M.: Phys. Rev. B 65 (2002) 155325.
13. Morgenstern,  M.: Surface Rev. Lett. 10 (2003) 933.
14. Paggel, J.J.: Phys. Rev. B 69 (2004) 035310.
#   15. Ozawa, K.: e-J. Surface Sci Nanotechnol. 3 (2005) 299.
16. King, P.D.C.: Phys. Rev. B 77 (2008) 125305.
17. King, P.D.C.: Phys. Rev. Lett. 104 (2010) 256803.
18. Eisenhardt, A.: J. Applied Phys. 115 (2014) 043716.
19. Olszowska, N.: Phys. Rev. B 94 (2016) 115305.
20. Zhang, T.: Phys. Rev. B 97 (2018) 214514.

Dobročka, E. and Osvald, J.: Influence of barrier height distribution on the parameters of Schottky diodes, Applied Phys. Lett. 65 (1994) 575.

1. Sands, D.: J. Applied Phys. 77 (1995) 3295.
2. Horvath, Z.J.: Applied Phys. Lett. 66 (1995) 3068.
3. Didio, M.: Solie State Electr. 38 (1995) 1923.
4. Chand, S.: Semicond. Sci. Technol. 11 (1996) 1203.
5. Chand, S.: J. Applied Phys. 80 (1996) 288.
#     6. Anderson, W.A.: Diffusion and Defect Data A 136-137 (1996) 21.
*     7. Horváth, Zs.: ASDAM 96. Bratislava 1996. P. 197.
*     8. Horváth, Zs.: ASDAM 96. Bratislava 1996. P. 263.
*     9. Horváth, Zs.: MIEL 96. Nova Gorica 1996. P. 365.
*    10. Horváth, Zs.: MIEL 96. Nova Gorica 1996. P. 371.
#    11. Horvath, Zs.: Proc. SPIE 3359 (1997) 65.
12. Chand, S.: J. Applied Phys. 82 (1997) 5005.
13. Chand, S.: Semicond. Sci Technol. 12 (1997) 899.
14. Horvath, Z.J.: Solid-State Electr. 42 (1998) 221
15. Ivančo, J.: Solid-State Electr. 42 (1998) 229.
*    16. Horvath, Zs.: In: Phys. Semicond. Devices 2. New Delphi: Narosa Publ House 1998. P. 1085.
17. Pipinys, P.: J. Applied Phys. 86 (1999) 6875.
18. Jones, F.E.: J. Applied Phys. 86 (1999) 6431.
19. Anilturk, O.S.: Semicond. Sci Technol. 14 (1999) 1060.
20. Singh, R.: Bulletin Mater. Sci 23 (2000) 471.
21. Chand, S.: Indian J. Engn. Mater. S7 (2000) 268.
22. Anilturk, O.S.: Solid-State Electr. 44 (2000) 41.
23. Horváth, Zs.: ASDAM 2000. Bratislava 2000. P. 39.
24. Bezak, V.: Czechosl. J. Phys. 51 (2001) 829.
25. Maeda, K.: Applied Surface Sci. 190 (2002) 445.
26. Pipinys, P.: Solid-State Electr. 46 (2002) 1283.
27. Chand, S.: Semicond. Sci Technol. 17 (2002) L36.
28. Alonso, C.F.: Applied Phys. Lett. 80 (2002) 3751.
29. Shigiltchoff, O.: Materials Sci Forum 433-4 (2002) 705.
*    30. Rossi, R.C.: PhD thesis. Pasadena: California Inst. Technol. 2002.
31. Jiang, Y.L.: J. Applied Phys. 93 (2003) 866.
32. Nuhoglu, C.: Semicond. Sci Techn. 18 (2003) 642.
33. Karatas S.: Applied Surface Sci 217 (2003) 250.
*    34. Dmitruk, N. L.: Phys. Stat. Solidi (c) 0 (2003) 933.
35. Horváth, Zs.: Proc. SPIE 5136 (2003) 200.
36. Chand, S.: ASDAM 2004. Piscataway: IEEE 2004. P. 251.
37. Tugluoglu, N.: Semicond. Sci Techn. 19 (2004) 1092.
38. Tugluoglu, N.: Chinese Phys. Lett. 21 (2004) 1795.
39. Acar, S.: Applied Surface Sci 233 (2004) 373.
40. Saglam, M.: Physica B 348 (2004) 397.
41. Chand, S.: Semicond. Sci Techn. 19 (2004) 82.
42. Akkilic, K.: Physica Scripta 70 (2004) 364.
43. Aydogan, S.: Polymer 46 (2005) 563.
44. Nuhoglu, C.: Applied Surface Sci 250 (2005) 203.
45. Cetin, H.: Semicond. Sci Techn. 20 (2005) 625.
46. Madaleno, J.C.: Diamond Related Mater. 14 (2005) 584.
47. Horvath, Zs.: Physica Status Solidi c 2 (2005) 1423.
48. Chand, S.: Semicond. Sci Technol. 20 (2005) 1143.
49. Ramadan, W.: Phys. Rev. B 72 (2005) 205333.
50. Chand, S.: Applied Surface Sci 252 (2006) 358.
51. Ayyildiz, E.: Applied Surface Sci 252 (2006) 1153.
52. Ozdemir, A.E.: Semicond. Sci Technol. 21 (2006) 298.
53. Karatas, S.: Applied Surface Sci 252 (2006) 2209.
54. Jin, L.J.: Thin Solid Films 504 (2006) 149.
55. Dogan, H.: Semicond. Sci Technol. 21 (2006) 822.
57. Madaleno, J.C.: Thin Solid Films 515 (2006) 106.
58. Rouag, N.: Semicond. Sci Technol. 22 (2007) 369.
59. Duman, S.: Applied Surface Sci 253 (2007) 3899.
60. Yakuphanoglu, F.: Physica B 392 (2007) 188.
61. Yakuphanoglu, F.: J. Phys. Chemistry C 111 (2007) 1840.
62. Jevtic, M.M.: Microelectron. Reliability 47 (2007) 51.
63. Kumar, A.A.: J. Optoelectr. Advanced Mater. 9 (2007) 3877.
64. Bezak, V.: J. Mathem. Phys. 48 (2007)  no. 11.
65. Aydin, M.E.: J. Applied Phys. 102 (2007)  043701.
66. Gullu, O.: Applied Surface Sci 253 (2007) 7246.
67. Cimilli, F.E.: Semicond. Sci Technol. 22 (2007) 851.
68. Bozhkov, V.G.: J. Comm. Technol.Electr. 52 (2007) 87.
69. Asubay, S.: Semicond. Sci Technol. 23 (2008) 035006.
70. Asubay, S.: Applied Surface Sci 254 (2008) 3558.
71. Zhang, M.: IEEE Trans. Electron Devices 55 (2008) 858.
72. Panchal, C.J. .: Semicond. Sci Technol. 23 (2008) 015003.
73. Bezak, V.: J. Physics A 41 (2008) 025301
74. Aydin, M.E.: Physica B 403 (2008) 131.
75. Boyarbay, B.: Microelectron. Engn. 85 (2008) 721.
76. Yakuphanoglu, F.: Synthetic Metals 158 (2008) 821.
77. Gullu, O.: Microelectr. Engn. 85 (2008) 2250.
78. Gullu, O.: Thin Solid Films 516 (2008) 7851.
79. Akkilic, K.: Microelectr. Engn. 85 (2008) 1826.
80. Pakma, O.: J. Applied Phys. 104 (2008) 014501.
81. Guler, G.: Physica B 403 (2008) 2211.
82. Duman, S.: Semicond. Sci Technol. 23 (2008) 075042.
83. Feste, S.F.: ULIS 2008. P. 27.
84. Yildirim, Y.N.: J. European Phys. J.-Applied Phys. 45 (2009) 10302.
85. Asubay, S.: Vacuum 83 (2009) 1470.
86. Tataroglu, A.: J. Alloys Compounds 479 (2009) 893.
87. Cimilli, F.E.: Physica B 404 (2009) 1558.
88. Feste, S.F.: Solid-State Electr. 53 (2009) 418.
89. Dogan, S.: Physica E 41 (2009) 646.
90. Korkut, H.: Mater. Sci Engn. B 157 (2009) 48.
91. Soylu, M.: Microelectr. Engn. 86 (2009) 88.
92. Korkut, H.: Microelectr. Engn. 86 (2009) 111.
93. Yildirim, N.: Microelectr. Engn. 86  (2009) 2270.
94. Korkut, H.: Physica B 404 (2009) 4039.
95. Yildirim, N.: Inter. J. Modern Phys. B 23 (2009) 5237.
96. Goksu, T.: Microelectr. Engn. 87 (2010) 1781.
97. Naik, S.S.: Superlatt. Microstruct. 48 (2010) 330.
98. Guzeldir, B.: J. Alloys Compounds 506 (2010) 388.
99. Yildirim, N.: Microelectr. Engn. 87 (2010) 2225.
100. Tripathi, S.K.: J. Mater. Sci 45 (2010) 5468.
101. Tascioglu, I.: J. Applied Phys. 108 (2010) 064506.
102. Ru, G.P.: Chinese Phys. B 19 (2010) 097304.
103. Yildirim, N.: J. Applied Phys. 108 (2010) 14506.
104. Chawanda, A.: J. Korean Phys. Soc 57 (2010) 1970.
105. Farag, A.A.M.: Synthetic Metals 161 (2011) 32.
106. Gullu, O.: J. Alloys Compounds 509 (2011) 571.
107. Saadaoui, S.: J. Applied Phys. 110 (2011) 013701.
108. Bozhkov, V.G.: J. Applied Phys. 109 (2011) 073714.
109. Pakma, O.: J. Sol-Gel Sci Technol. 58 (2011) 244.
110. Li, J.: Phys. Rev. B 83 (2011) 125317.
111. Tataroglu, A.: Optoelectr. Adv. Mater.-Rapid Comm. 5 (2011) 438.
112. Ejderha, K.: Mater. Sci Semicond. Process. 14 (2011) 5.
113. Soylu, M.: Optoelectr. Advanced Materials-Rapid Comm. 5 (2011) 135.
114. Cetin, H.: Synthetic Metals 161 (2011) 2384.
115. Sumesh, C.K.: European Phys. J.-Applied Phys. 56 (2011) 10103.
116. Sumesh, C.K.: Chinese Phys. Lett. 28 (2011) 087201.
# 117. Modi, B.P.: J. Nano- and Electron. Phys. 3 (2011) 680.
118. Ejderha, K.: European Phys. J.-Applied Phys. 57 (2012) 10102.
119. Pakma, O.: Inter. J. Photoenergy  (2012) 858350.
120. Bozhkov, V. G.: J. Applied Phys. 111 (2012) 053707.
121. Fiat, S.: Physica B 407 (2012) 2560.
122. Asghar, M.: Key Engn. Mater. 510-511 (2012) 265.
123. Tecimer, H.: Sensors Actuators A 185 (2012) 73.
124. Modi, B.P.: Proc. 2012 1st Inter. Conf. Emerg. Technol. Trends in Electron., Comm. Networking, ET2ECN 2012 (2012) art. no. 6470063.
125. Afandiyeva, I. M.: J. Alloys Compounds 552 (2013) 423.
126. Reddy, Y.M.: Brazilian J. Phys. 43 (2013) 13.
127. Tataroglu, A.: Phys. Scripta 88 (2013)  015801.
128. Gedikpinar, M.: Superlatt. Microstr. 59 (2013) 123.
129. Korucu, D.: Physica B 414 (2013) 35.
130. Korucu, D.: Thin Solid Films 531 (2013) 436.
131. Bobby, A.: Physica B 431 (2013) 6.
132. Reddy, M.S.P.: J. Applied Polymer Sci 131 (2014) 39773.
133. Elhaji, A.: Mater. Sci Semicond. Process. 17 (2014) 94.
134. Ozerli, H.: Mater. Research Bull. 53 (2014) 211.
135. Ejderha, K.: J. Applied Phys. 116 (2014) 234503.
136. Ejderha, K.: European Phys. J.-Applied Phys. 68 (2014) Iss. 2.
137. Akkaya, A.: Thin Solid Films 564 (2014) 367.
138. Kumar, R.: Environment. Sci Engn. 2014. P. 359.
139. Hirose, S.: Applied Phys. Lett. 106 (2015) 191602.
140. Latreche, A.: Inter. J. Numerical Modell. 28 (2015) 231.
141. Guzeldir, B.: J. Alloys. Compounds 627 (2015) 200.
142. Kavasoglu, N.: Mater. Research Bull. 70 (2015) 804.
143. Ocaya, R. O.: Synthetic Metals 209 (2015) 164.
144. Kaushal, P.: Inter. J. Electron. 103 (2016) 937.
145. Kavasoglu, N.: Semiconductors 50 (2016) 616.
146. Hendi, A.A.: J. Alloys Compounds 665 (2016) 418.
147. Turut, A.: J. Semicond. 37 (2016) UNSP 044001.
148. Mekki, A.: J. Nanoelectron. Optoelectron. 11 (2016) 153.
149. Ozden, S.: Inter. J. Photoenergy (2016) 6157905.
*   150. Li, S.T.: Chin. Phys. Lett. 26 (2009) 077201.
151. Canbay, C.: J. Alloys. Compounds 688 (2016) 762.
152. Khusayfan, N.M.: Synthetic Metals 222 (2016) 299.
#   153. Tataroglu, A.: Dyes Pigments 132 (2016) 64.
154. Karabulut, A.: J. Semicond. 38 (2017) 054003.
155. Ejderha, K.: Silicon 9 (2017) 395.
156. Reddy, P.: Applied Phys. Lett. 110 (2017) 011603.
157. Dere, A.: Physica B 520 (2017) 76.
158. Ocaya, R.O.: Physica E 93 (2017) 284.
159. Yildirim, N.: Surface Rev. Lett. 25 (2018) 1850082.
160. Reddy, P.: Semicond. Sci Technol. 34 (2019) 035004.
161. Chourasiya, Hemant K.: Nuclear Instr. Methods in Phys. Res. B 443 (2019) 43.
162. Yildirm, N.: Inter. J. Modern Phys. B 33 (2019) 1950232.
163. Budak, H.: J. Electron. Mater. 49 (2020) 5698.
164. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
165. Aslan, F.: Silicon 12 (2020) 2149.
166. Polat, O.: J. Phys.-Cond. Matt. 33 (2021) 035704.
167. Visvkarma, A.K.: Semicond. Sci Technol. 36 (2021) 065012.
168. Skachkov, D.: Phys. Rev. B 104 (2021) 045429.
169. Kleppinger, J.W.: Applied Phys. Lett. 119 (2021) 063502.
170. Turut, A.: Turkish J. Phys.‏ 45 (2021)‏ 268.
171. Ejderha, K.: J. Electron. Mater. 50 (2021) 6741.
172. Khalili, S.: J. Alloys. Compounds 889 (2021) 161647.
173. Kim, H.: ACS Omega 7 (2022) 41606.
174. Torkhov, N.A.: Semicond. Sci Technol. 38 (2023) 015019.
175. Bengi, S.: J. Mater. Sci-Mater. Electron. 34 (2023) Iss. 3.
176. Ahmed, M.A.: J. Mater. Sci-Mater. Electron. 34 (2023) 1312.

Aristov, V., Le Lay, G., Hricovini, K., Taleb-Ibrahimi, A., Dumas, P., Gunther, R., Osvald, J., Indlekofer, G., : Nearly complete tuning of the Fermi level position at a prototypical metal-silicon interface: lead on unpinned Si(111)1×1-H J. Spectroscopy Related Phenomena 68 (1994) 419.

    1. Leisenberger, F.P.: Surface Sci 383 (1997) 25.
2. Ziegler, J.C.: Electrochim. Acta 45 (1999) 827.
3. Hirschauer, B.: Applied Surface Sci 148 (1999) 164.
4. Grupp, C.: J. Electron Spectros. Related Phenomena 103 (1999) 309.
5. Grupp, C.: Surface Sci 435 (1999) 585.
6. Ziegler, J.C.: Surface Sci 452 (2000) 150.
7. Khaliq, A.: J. Phys. Chem. C 118 (2014) 22499.

LeLay, L., Aristov, V., Hricovini, K., Taleb-Ibrahimi, A., Dumas, P., Osvald, J., Indlekofer, G., : Schottky limit on ideally H-terminated unpinned silicon(111) surfaces. In: Control of Semicond. Interfaces. Ed.: I.Ohdomari. Amsterdam: Elsevier 1994. P. 39.

      1. Morgen, P.: Applied Surface Sci 117 (1997) 72.
#   2. Hara, S.: Bull. Electrochem. Labor. 63 (1999)  13.
3. Hara, S.: Applied Surface Sci 162 (2000) 19.
4. Hara, S.: Surface Sci 494 (2001) L805.
5. Teraji, T.: Phys. Rev. B 70 (2004) 035312.

Aristov, V., LeLay, L., Hricovini, K., Taleb-Ibrahimi, A., Osvald, J., Dumas, P., Gunther, R., Indlekofer, G., : Tunning the Fermi level position through nearly the whole gap at a non-reactive metal-silcon interface. In: Formation of Semicond. Interfaces. Proc. 4th Int. Conf. Forschungszentrum Jülich. Ed.: B.Lengeler, H. Lüth. Singapore: World Sci. 1993. P. 245.

     1. Nishiyama, A.: Surface Sci 350 (1996) 229.
#   2. Würde, K.: Surface Rev. Lett. 5 (1998) 105.

Osvald, J.: On the barrier height inhomogeneities at polycrystalline metal semiconductor contacts, Solid State Electr. 35 (1992) 1629.

1. Horvath, Zs.J.:Vacuum 46 (1995) 963.
2. Chand, S.: Semicond. Sci Technol. 12 (1997) 899.
3. Donoval, D.: Solid-State Electr. 42 (1998) 235.
*    4. Horvath, Z.: In: Physics of Semicond. Devices 2 . New Delphi: Narosa Publ House 1998. P. 1085.
*    5. Rang, T.: In: MICROSIM II – Simulation and Design of Microsystems and Microstructures. Southampton: Comput. Mechanics Inc 1998. P. 23.
6. Anilturk, O.S.: Semicond. Sci Technol. 14 (1999) 1060.
7. Drobny, V.: ASDAM’98  New York: IEEE (1999) 133.
8. Campos, M.: Polymers Polymer Composites 7 (1999) 325.
9. Anilturk, O.S.: Solid-State Electr. 44 (2000) 41.
10. Lewis, N.S.: J. Electroanalyt. Chem. 508 (2001) 1.
*   11. Rossi, R.C.: PhD Thesis. Pasadena: California Inst. Technol. 2002.
12. Jiang, Y.L.: Chinese Phys. Lett. 19 (2002) 553.
13. Yildirim, Y.N.: J. European Phys. J.-Applied Phys. 45 (2009) 10302.
14. Gulnahar, M.: Solid-State Electr. 53 (2009) 972.
15. Yildirim, N.: Inter. J. Modern Phys. B 23 (2009) 5237.
16. Taşçıoğlu, İ: J. Applied Phys. 108 (2010) 064506.
17. Ru, G. P.: Chin Phys. B 19 (2010) 097304.
18. Gulnahar, M.: J. Alloys Compounds 509 (2011) 7317.
19. Ejderha, K.: European Phys. J.-Applied Phys. 57 (2012) 10102.
20. Rhodes, D.: Nature Mater. 18 (2019) 541.
21. Toumi, S.: Indian J. Phys. 93 (2019) 1155.
22. Gulnahar, M.: J. Mater. Sci-Mater. in Electron. 32 (2021) ‏1092.
23. Icking, E.: Adv. Electron. Mater. 8 (2022) ‏2200510.

Missous, M., Morgan, D., Wood, J., Grovenor, C., Kendelewicz, T., McGlip, J., Duke, C., Osvald, J., Schwartz, G., Wieder, H., : In: Properites of Gallium Arsenide. 2nd ed. London: INSPEC 1990. P. 383.

     1. Gombia, E.: J. Applied Phys. 84 (1998) 5337.

Osvald, J., Šándrik, R., : Interdifussion between some refractory metal silicides and GaAs Thin Solid Films 169 (1989) 223.

     1. Mathew, S.: Thin Solid Films 254 (1995) 278.

Osvald, J., : Influence of electron lithography on electrical parameters of MOS structures Phys. Status Solidi A 90 (1985) K225.

     1. Eden, K.: Applied Surface Sci. 36 (1989) 421.

Vávra, I., Lobotka, P., Zachar, F., Osvald, J., : TEM in situ observation of electromigration damage in Al-Cu stripe Physica Status Solidi A 63 (1981) 363.

     1. Rodbell, K.P.: Thin Solid Films 108 (1983) 95.
2. Zehe, A.: J. Phys. F 16 (1986) 407.
3. Luby, S.: Thin Solid Films 116 (1984) 97.
4. Fantini, F.: Microelectr. Reliability 24 (1984) 275.
*    5. Chang, C.Y: Mater. Res. Soc. Symp. Proc. 255. Materials Research 1991. P. 125.
6. Lloyd, J.R.: J. Applied Phys. 71 (1992) 3231.
7. Vook, R.W.: Applied Surface Sci 60-1 (1992) 71.
8. Fritzsch, B.: Crystal Research Technol. 28 (1993) K44.
9. Vook, R.W.: Mater. Chem. Phys. 36 (1994) 199.
10. Patrinos, A.J.: J. Applied Phys. 75 (1994) 7292.
11. Arzt, E.: J. Applied Phys. 76 (1994) 1563.
12. Lloyd, J.R.: Applied Phys. Lett. 69 (1996) 2486.
13. Rirge, S.P.: Applied Phys. Lett. 69 (1996) 2367.
14. Okabayashi, H.: Applied Phys. Lett. 68 (1996) 1066.
15. Okabayashi, H.: Japan. J. Applied Phys. 35 (1996) 1102.
16. Shih, W.C.: Thin Solid Films 292 (1997) 103.
17. Zehe, A.: Microelectron. Reliab. 42 (2002) 1849.
18. Zehe, A.: Crystal Research Technol. 37 (2002) 817.
19. Zehe, A.: Modern Phys. Lett. B 16 (2002) 299.
20. Zehe, A.: Mater. Lett. 57 (2003) 3729.