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Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

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Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

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Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.

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Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., and Georgakilas, A.: Current conduction mechanism and electrical break-down in InN grown on GaN, Applied Phys. Lett. 110 (2017) 232103.

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Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., and Kordoš, P.:Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

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Ščepka, T., Polakovič, J., Šoltýs, J., Tóbik, J., Kulich, M., Kúdela, R., Dérer, J., and Cambel, V.: Individual vortex nucleation/annihilation in ferromagnetic nanodots with broken symmetry observed by micro/Hall magnetometry, AIP Adv. 5 (2015) 117205.

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Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., and Gregušová, D.: III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap, J. Vacuum Sci Technol. B 33 (2015) 01A111.

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Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, M., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., and Georgakilas, A.: Elimination of surface band bending on N-polar InN with thin GaN capping, Applied Phys. Lett. 107 (2015) 191605.

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Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., and Kordoš, P.: InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator, Applied Phys. Lett. 105 (2014) 183504.

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Kúdela, R., Šoltýs, J., Vincze, A., Novák, J., : Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy. Phys. Status Solidi RRL 7 (2013) 443–446.

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Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., and Novák, J.: Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113.

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Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., Fedor, J., : 50-nm local anodic oxidation technology of semiconductor heterostructures. J. Nanosci Nanotechnol. 10 (2010) 4448-4453.

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Gregušová, D., Martaus, J., Fedor, J., Kúdela, R., Kostič, I., and Cambel, V.: On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography. Ultramicroscopy 109 (2009) 1080-1084.

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Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices. Ultramicroscopy 108 (2008) 1021-1024.

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Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : New approach to local anodic oxidation of semiconductor heterostructures. Ultramicroscopy 108 (2008) 1086-1089.

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Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : AFM nanooxidation process – technology perspective for mesoscopic structures. Surface Sci. 601 (2007) 2717-2723. (APVV 51-045705).

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Cambel, V., Karapetrov, G., Novosad, V., Bartolome, E., Gregušová, D., Fedor, J., Kúdela, R., Šoltýs, J., :Novel Hall sensors developed for magnetic field imaging systems. J. Magnetism Magn. Mater. 316 (2007) 232-235. (APVV 51-045705).

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