Ing. Hrubišák Fedor

Gucmann, F., Meng, B., Chvála, A., Kúdela, R., Yuan, C., Ťapajna, M., Florovič, M., Egyenes, F., Eliáš, P., Hrubišák, F., Kováč, J.Jr., Fedor, J., and Gregušová, D.: Improved thermal performance of InGaAs/GaAs nanomembrane HEMTs transferred onto various substrates by epitaxial lift-off, ACS Applied Electron. Mater. 6 (2024) 5651–5660.

1. Wang, J.Q.: J. Mater. Process. Technol. 337 (2025) 118712.
2. Zhang, J.Y.: Mater. Res. Express 12 (2025) 025902.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
2. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
3. Akyol, F.: Mater. Sci Semicond. Process. 170 (2024) 107968.
4. Saquib, T.: J. Applied Phys. 135 (2024) 065701.
5. Hu, Y.: Mater. Sci Semicond. Process. 178 (2024) 108453.
6. Ferdous, N.: Sci Rep. 14 (2024) 12748.
7. Ku, C.W.: Applied Surface Sci Adv. 24 (2024)100661.
8. Su, J.: J. Mater. Sci Technol. 210 (2025) 20.

Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.

1. Girolami, M.: J. Mater. Chem. C 11 (2023) 3759.
2. Aarik, L.: Crystal Growth Design 23 (2023) 5899.
3. Chen, S.J.: J. Alloys Comp. 989 (2024) 174388.
4. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
5. He, Y.J.: Mater. 17 (2024) 1870.
6. Hu, Y.: Mater. Sci Semicond. Process. 178 (2024) 108453.
7. Aarik, L.: J. Mater. Chem. C 12 (2024) 10562.