Ing. Gucmann Filip, PhD.

Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.

1. Girolami, M.: J. Mater. Chem. C 11 (2023) 3759.

Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M.,  Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

1. Zhao, K.: Nanomater. 12 (2022) 172.
2. Goikhman, B.V.: J. Mater. Chem. A 10 (2022) 8413.
3. Singh, R.: J. Mater Sci-Mater. Electron. 33 (2022) 6969.
4. Fedorov, F.S.: Applied Surface Sci 606 (2022) 154717.

Šimkovic, I., Gucmann, F., Mendichi, R., Schieroni, A.G., Piovani, D., Dobročka, E., and Hricovíni, M.: Extraction and characterization of polysaccharide films prepared from Furcellaria lumbricalis and Gigartina skottsbergii seaweeds, Cellulose 28 (2021) 9567–9588.

1. Joshi, J.: Polymers 14 (2022) 1267.
2. Kulikova, Y.: Applied Sci-Basel 12 (2022) 3599.
3. Liu, J.: ACS Applied Polymer Mater. 4 (2022) 5608-.
4. Kruk, J.: Food Hydrocolloids 135 (2023) 108214.

Gucmann, F., Pomeroy, J.W., and Kuball, M.: Scanning thermal microscopy for accurate nanoscale device thermography, Nano Today 39 (2021) 101206.

1. Fujii, S.: J. Amer. Chem. Soc 143 (2021) 18777.
2. Li, Y.F.: J. Thermal Sci 31 (2022) SI976.
3. Nam, K.: Nanotechnol. 34 (2023) 105202.

Egyenes-Pörsök, F., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.: Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002.

1. Tak, B.R.: J. Phys. D 54 (2021) 453002.
2. Zhou, J.G.: J. Mater. Res. 36 (2021) 4832.
3. Yang, D.: Electron. Mater. Lett. 18 (2022) 113.
4. Biswas, M.: APL Mater. 10 (2022) 060701.
5. Liu, Z.: J. Phys. D 56 (2023) 093002.
6. Jewel, M.U.: Physica Status Solidi A 220 (2023) 2300036.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.
2. Kim, H.: IEEE Access 10 (2022) 68724.

Kuball, M., Pomeroy, J. W., Gucmann, F., and Oner, B.: Thermal analysis of semiconductor devices and materials – Why should I not trust a thermal simulation?. In  IEEE BiCMOS and Compound Semicond. Integrated Circuits Technol. Symp. (BCICTS). Nashville 2019, pp. 1-5. (Not IEE SAS)

1. El Helou, A.: IEEE Trans. Electron Dev. 67 (2020) 5415.
2. El-Helou, A.: Semicond. Sci Technol. 36 (2021) 014008.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Liang, J., Zhou, Y., Masuya, S., Gucmann, F., Singh, M., Pomeroy, J., Kim, S., Kuball, M., Kasu, M., and Shigekawa, N.: Annealing effect of surface-activated bonded diamond/Si interface, Diamond Related Mater. 93 (2019) 187-192. (Not IEE SAS)

 1. Matsumae, T. Proc. 2019 6th Inter. Workshop on Low Temp. Bonding for 3d Integration (LTB-3D), p. 70.
2. Matsumae, T.: Electron. Compon. Technol. Conf. 2020‏, pp. 1436-1441.
3. Liu, H.: Tribol. Inter. 148 (2020) 106298.
4. Matsumae, T.: Mater. Sci. Forum 1004 MSF (2020) 206.
5. Liu, H.: Comput. Mater. Sci 186 (2021) 110069.
6. Matsumae, T.: Scripta Mater. 191 (2021) 52.
7. Yang, S.: Mater. Res. Express 8 (2021) 085901.
8. Fukumoto, S.: Inter. Conf. Electron. Packaging – ICEP 2021, 9451935, p. 41.
9. Yuan, Z.H.:Proc. ASME – INTERPACK 2021. Art. No. V001T01A002.
10. Yang, S.: Materials 15 (2022) 3115.
11. Wang, H.C.: Diamond Related Mater. 127 (2022) 109213.

Liang, J.B., Zhou, Y., Masuya, S., Gucmann, F., Singh, M.,  Pomeroy, J., Kim, S.,  Kuball, M., Kasu, M., and Shigekawa, N.: Effect of annealing temperature on diamond/Si interfacial structure. In: Proc. 2019 6th Inter. Workshop on Low Temp. Bonding for 3d Integration (LTB-3D), p. 3. (Not IEE SAS)

1. Li, M.: Forensic Sci Inter.-Genetics 44 (2020) 102169.
2. Ilyas, T.: Electronics 9 (2020) 383.
3. Pan, L.: IEEE Conf. Computer Vision Pattern Recog. (2020)‏ 1669.
4. Naveed, S.: Environment. Pollution 261 (2020) 114233.
5. French, M.A.: J. Infect. Diseases 221 (2020) 1232.
6. Naveed, S.: Ecotoxicol. Environment. Safety 206 (2020) 111200.
7. Zhang, P.: Electrochim. Acta 363 (2020) 137220.
8. Yang, J.: Environment. Res. 189 (2020) 109950.
9. Lin, J.-R.: Automat. Construct. 115 (2020) 103212.
10. Guo, J.F.: IEEE/CVF Conf. On Comp. Vision Pattern Recog., CVPR 2021, p. 14693.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

1. Biswas, D.: J. Applied Phys. 125 (2019) 225707.
2. Toprak, A.: Mater. Res. Express 8 (2021) 126302.
#     3. Wang, X.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 42 (2022) 151.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

1. Song, K.: J. Phys. D 53 (2020) 345107.
2. Shi, Y.: IEEE Trans. Electron Dev. 67 (2020) 2290.
3. Duong D.N.: J. Applied Phys. 127 (2020) 094501.
4. Kaushik, P.K.: Nanoscale Res. Lett. 16 (2021) 159.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

1. Huang, H.: J. Phys. D 51(2018) 345102.
2. Jo, Y.J.: Electron. Mater. Lett. 15 (2019) 179.
3. Shi, Y.: IEEE Trans. Electron Dev. 66 (2019) 4164.
4. He, F.: Chinese J. Catal. 41 (2020) SI9.
5. Shi, Y.: IEEE Trans. Electron Dev. 67 (2019) 2290.
6. Asubar, J.T.: IEEE Electron Dev. Lett. 41 (2020) ‏ 693.
7. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
8. Low, R.S.: Applied Phys. Express 14 (2021) 031004.
9. Dashtian, K.: Coord. Chem. Rev. 445 (2021) 214097.
10. Vauche, L.: ACS Applied Electron. Mater. 3 (2021) 1170.
11. Kaushik, P.K.: Nanoscale Res. Lett. 16 (2021)159.
12. Kaplar, R.: Ultrawide Bandgap Semicond. 107 (2021) 191.
13. Ahbab, S.S.: Proc. IEEE Inter. Women in Engn. (WIE) Conf. Electr. Computer Engn., WIECON-ECE 2021. IEEE 2022, p. 59.
14. Gong, J.R.: Japan. J. Applied Phys. 61 (2022) 011003.
15. Lin, Y.S.: Sci Adv. Mater. 4 (2022) 1419.
16. Nautiyal, P.: Microelectron. Reliab. 139 (2022) 114800.

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.

1. Toyoshima, R.: Chem. Comm. 56 (2020) 14905.
2. Wang, J.J.: Mater. Sci Semicond. Process. 159 (2023) 107372.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B., and Kuzmík, J.: Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density, J. Vacuum Sci Technol. B 35 (2017) 01A107.

1. Meer, M.: Semicond. Sci Technol. 32 (2017) 04LT02.
2. Duan, T. L.: Nanoscale Res. Lett. 12 (2017) 499.
3. Gao, J.: Physica Status Solidi A 215 (2018) 1700498.
4. Le, S.P.: J. Applied Phys. 123(2018) 034504.
5. Takhar, K.: Applied Surface Sci 481 (2019) 219.
6. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.
7. Schiliro, E.: AIP Adv. 10 (2020) 125017.
8. Nguyen, D.D.: J. Applied Phys. 130 (2021) 014503.
9. Bhardwaj, N.: Applied Surface Sci 572 (2022) 151332.
10. Fiorenza, P.: Applied Surface Sci 579 (2022) 152136.
11. Schiliro, E.: ACS Applied Electr. Mater. 4 (2022) 406.
12. Lo Nigro, R.: Materials 15 (2022) 830.
13. Calzolaro, A.: Materials 15 (2022) 791.
14. Meer, M.: Semicond. Sci Technol. 37 (2022) 085007.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., :Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

1. Silva, J.C.F.: J. Molecular Model. 23 (2017) 204.
2. Kumar, J.: J. Alloys Compounds 727 (2017) 1089.
3. Sharma, I.: J. Alloys Compounds 723 (2017) 50.
4. Zhou, Y.: J. Colloid Interface Sci 560 (2020) 769.
#    5. Panda, S.: Proc. DevIC 2021, pp. 71-74.
6. Gil-Corrales, J.A.: Inter. J. Molecular Sci 23 (2022) 5169.
7. Panda, S.R.: Physica Scripta 97 (2022) 114006.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., and Kuzmík, J.: Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

1. Ding, L.: IEEE Conf. Computer Vision Pattern Recogn. 2018, pp. 6508-6516.
2. Dashtian, K.: Coord. Chem. Rev. 445 (2021) 214097.
3. Kim, H.: IEEE Access 10 (2022) 68724.

Ťapajna, M., Stoklas, R., Gregušová, D., Válik, L., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., Hashizume, T., and Kuzmík, J.: On the origin of surface donors in AlGaN/GaN metal-oxide semiconductor heterostructures with Al2O3 gate dielectric—correlation of electrical, structural, and chemical properties. In: Inter. Workshop on Nitride Semicond. (IWN 2016) Orlando 2016.

1. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

1. Hasan, Md. R.: J. Vacuum Sci Technol. B 35 (2017) 052202.
2. Pan, T.: Materiali in Tehnologije 52 (2018) 795.

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., and Gregušová, D.: III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap, J. Vacuum Sci Technol. B 33 (2015) 01A111.

1. Grabnic, T.: Surface Sci 692 (2020) 121516.

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., and Kordoš, P.: InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator, Applied Phys. Lett. 105 (2014) 183504.

1. Kim, S.-H.: IEEE Electron Device Lett. 36 (2015) 884.
2. Kim, S.-H.: J. Nanosci Nanotechnol. 16 (2016) 10389.
3. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.
4. Bazaka, K.: Nanoscale 10 (2018) 17494.
5. Kim, S.-H.: ACS Applied Mater. Interfaces 10 (2018) 26378.

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., and Fedor, J.: Properties of Al2O3 thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

1. Naumann, F.: J. Vacuum Sci Technol. B 38 (2020) 014014.
2. Kim, Y.: ACS Applied Mater. Interfac. 12 (2020) 44912.
3. Burwell, G.: Adv. Engn. Mater. 25 (2023) Iss. 12.

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.

1. Freedsman, J.J.: IEEE Trans. Electron Dev. 60 (2013) 6579632.
2. Samanta, P.: Semicond. Sci Technol. 34 (2019) 115008.
3. Zhao, S.: J. Mater. Sci 56 (2021) 17478.
4. Arroyo, J.M.: J. Mater. Chem. C 11 (2023) 1824.

Rodière, P., Klein,T., Lemberger, L., Hasselbach, K., Demuer, A., Kačmarčik, J., Wang, Z.S., Luo, H.Q., Lu, X.Z., Wen, H.H., Gucmann, F., and Marcenat, C.: Scaling of the physical properties in Ba(Fe,Ni)2As2 single crystals: Evidence for quantum fluctuations, Phys. Rev. B 85 (2012) 214506.

1. Shipulin, I.: Materials 13 (2020) 630.
2. Kurokawa, H.: Phys. Rev. B 104 (2021) 014505.