2005

Ahoranta, M., Bukva, P., Kováč, P., Mikkonen, R., Tarhasaari, T., : Estimation of the stress state of axially tensioned Bi-2223/Ag tapes. Physica C 432 (2005) 239-249.

Balog, M., Sedlačková, K., Zifcak, P., Janega, J., : Liquid phase sintering of SiC with rare-earth oxides Ceramics-Silikaty 49 (2005) 259-262.

Bartolome, E., Gömöry, F., Granados, X., Puig, T., Obradors, X., : Transport versus magnetization technique for determination of critical current densities in superconducting tapes with macroscopic defects. Supercond. Sci Technol. 18 (2005) 388-394.

Bartolome, E., Granados, X., Cambel, V., Fedor, J., Kováč, P., Hušek, I., : Critical current density analysis of ex situ MgB2 wire by in-field and temperature Hall probe imaging. Supercond. Sci Technol. 18 (2005) 1135-1140.

Bartolome, E., Granados, X., Palau, A., Puig, T., Obradors, X., Navau, C., Pardo, E., Sanchez, A., Claus, H., : Magnetization and critical current of finite superconducting YBa2Cu3O7 rings. Phys. Rev. B 72 (2005) 024523.(not IEE SAS).

Bernát, J., Gregušová, D., Heidelberg, G., Fox, A., Marso, M., Lüth, H., Kordoš, P., : SiO2/AlGaN/GaN MOSHFET with 0.7 μm gate-length and fmax/fT of 40/24 GHz Electronics Lett. 41 (2005) 667-668.

Bychikhin, S., Vandamme, L., Kuzmík, J., Meneghesso, G., Levada, S., Zanoni, E., Pogany, D., : Accelerated aging og GaN light emitting diodes studied by 1/f and RTS noise, AIP Conf. Proc. 780 (2005) 709-712.

Cambel, V., Fedor, J., Gregušová, D., Kováč, P., Hušek, I., : Large-scale high-resolution scanning Hall probe microscope used for MgB2 filament characterization. Supercond. Sci Technol. 18 (2005) 417-421.

Čičo, K., Rosová, A., Fröhlich, K., Hušeková, K., Valent, P., Jergel, M., : Characterization of Al2O3 gate dielectric films grown on Si substrate. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 196-199.

Dhalle, M., van Weeren, H., Wessel, S., den Ouden, A., ten Kate, H., Hušek, I., Kováč, P., Schlachter, S., Goldacker, W., : Scaling the reversible strain response of MgB2 conductors. Supercond. Sci Technol. 18 (2005) S253-S260.

Dhar, S., Kosina, H., Palankovski, V., Ungersboeck, S., Selberherr, S., : Electron mobility model-for strained-Si devices. IEEE Trans. Electron Devices 52 (2005) 527-533. (Not IEE SAS).

Dubecký, F., Zaťko, B., Gombia, E., Sekáčová, M., Boháček, P., Huran, J., : Recent progress in development of monolithic strip line X-ray detectors based on semi-insulating InP. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 157-160.

Dubecký, F., Hulicius, E., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Sekáčová, M., Boháček, P., Pangrác, J., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with blocking electrode formed by P+ homo- and heterojunction. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 153-156.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., Huran, J., : Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images. Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

Eliáš, P., Martaus, J., Šoltýs, J., Kostič, I., : Micromachining of mesa and pyramidal-shaped objects in (1 0 0) InP substrates. J. Micromech. Microengn. 15 (2005) 1007-1014.

Farinon, S., Fabbricatore, P., Gömöry, F., Greco, M., Seiler, E., : Modeling of current density distributions in critical state by commercial FE codes. IEEE Trans. Applied Supercond. 15 (2005) 2867-2870.

Ferrari, C., Pernot, P., Mikulík, P., Helfen, L., Verdi, N., Baumbach, T., Lübbert, D., Korytár, D., : Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging. J. Applied Crystallography 38 (2005) 91-96.

Formisano, A., Ilyin, Y., Muzzi, L., Martone, R., Gislon, P., Nijhuis, A., Polák, M., Sborchia, C., Stepanov, B., : DC and transient current distribution analysis from self-field measurements on ITER PFIS conductor Fusion Engn. Design 75-79 (2005) 11-15.

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., : Properties of Ru/HfxSi1-xOy/SI MOS gate stack structures grown by MOCVD. In: Proc. 207th Electrochemical Soc Meeting. Eds. E.P.Gusev et al. Pennington: The Electrochem. Soc, 2005. P. 339.

Frolek, L., Demenčík, E., : Measurement of AC profiles of magnetic field above HTSc tape using Hall probe technique with help of DAQ cards and triggering. IEEE Trans. Applied Supercond. 15 (2005) 3660-3663.

Gendiar, A., Moško, M., Vagner, P., Németh, R., : Tunneling of interacting fermions in 1D systems Acta Phys. Polonica 108 (2005) 661-667.

Gendiar, A., Nishino, T., : Phase diagram of the three-dimensional axial next-nearest-neighbor Ising model. Phys. Rev. B 71 (2005) 024404.

Gendiar, A., Nishino, T., Derian, R., : Estimation of the magnetic critical exponent by tensor product variational approach Acta Phys. Slovaca 55 (2005) 141-148.

Gömöry, F., Frolek, L., Šouc, J., : Non-uniform current distribution as the cause of false voltage signals in the ac loss measurement on a superconducting cable. Supercond. Sci Technol. 18 (2005) 780-790.

Gömöry, F., Frolek, L., Šouc, J., Grilli, F., : Phase shifts of parallel currents in a single-layer model of superconducting cables. IEEE Trans. Applied Supercond. 15 (2005) 1779-1782.

Grančič, B., Mikula, M., Hruba, L., Gregor, M., Štefečka, M., Csuba, A., Dobročka, E., Plecenik, A., Kúš, P., : The influence of deposition parameters on TiB2 thin films prepared by DC magnetron sputtering, Vacuum 80 (2005) 174. (not IEE SAS).

Gregušová, D., Bernát, J., Držík, M., Marso, M., Uherek, F., Novák, J., Kordoš, P., : Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs. Phys. Status Solidi c 2 (2005) 2619-2622.

Haigh, S., Kováč, P., Prikhna, T., Savchuk, Y., Kilburn, M., Salter, C., Hutchinson, J., Grovenor, C., : Chemical interactions in Ti doped MgB2 superconducting bulk samples and wires. Supercond. Sci Technol. 18 (2005) 1190-1196.

Hartmanová, M., Jergel, M., Navratil, V., Navratil, K., Gmucová, K., Gandarilla, F., Zemek, J., Chromik, Š., Kundracik, F., : Effect of structural imperfections on the characteristics of YSZ dielectric layers grown by E-beam evaporation from the crystalline targets, Acta Phys. Slovaca 55 (2005) 247-259.

Holúbek, T., Kováč, P., Melišek, T., : Current transfer length in MgB2/Fe mono-core wire and approximation of the interface layer resistivity. Supercond. Sci Technol. 18 (2005) 1218-1221.

Hotový, I., Huran, J., McPhail, D., Řeháček, V., : Enhanced magnetron sputtering deposition of NiO by gas flow modulation. In: ISPC 17. Eds. J. Mostaghimi et al. Toronto: Univ. Toronto Press Inc. 2005. P. 570-571.

Hotový, I., Huran, J., Spiess, L., Gubisch, M., Romanus, H., Schawohl, J., : Hydrogen microsensors based on NiO modified thin film. In: 50. Inter. Wissenschaft. Kolloquium. Ilmenau: TU 2005. P. 193-194.

Hulman, M., Skákalová, V., Roth, S., Kuzmany, H., : Raman spectroscopy of single-wall carbon nanotubes and graphite irradiated by γ rays. J. Applied Phys. 98 (2005) 024311. (Not IEE SAS).

Hulman, M., Krause, M., Dubay, O., Kresse, G., Vietze, K., Seifert, G., Wang, C., Shinohara, H., Kuzmany, H., : Quantized rotational states in endohedral fullerenes AIP Conf. Proc. 786 (2005) 56. (Not IEE SAS).

Huran, J., Hotový, I., Balalykin, N., : Plasma enhanced chemical vapour deposited amorphous silicon carbide films. In: ISPC 17. Eds. J. Mostaghimi et al. Toronto: Univ. Toronto Press Inc. 2005. P. 528-529.

Hurd, F., Sborchia, C., Salpietro, E., Duglue, D., Keefe, C., Bates, S., Pesenti, P., della Corte, A., Bruzzone, P., Polák, M., : Design and manufacture of a full size joint sample (FSJS) for the qualification of the poloidal field (PF) insert coil. IEEE Trans. Applied Supercond. 15 (2005) 1379-1382.

Chen, D., Pardo, E., Sanchez, A., : Demagnetizing factors for rectangular prisms. IEEE Trans. Magnetics 41 (2005) 2077-2088.(not IEE SAS).

Chen, D., Pardo, E., Sanchez, A., Wang, S., Han, Z., Bartolome, E., Puig, T., Obradors, X., : Anomalous ac magnetic susceptibility of high-temperature YBa2Cu3O7−δ superconductors. Phys. Rev. B 72 (2005) 052504.(not IEE SAS).

Chen, D., Pardo, E., Sanchez, A., : Flux-flow critical-state susceptibility of superconductors. Applied Phys. Lett. 86 (2005) 242503.

Chen, D., Pardo, E., Sanchez, A., : Transverse ac susceptibility of superconducting bars with elliptical cross-section and constant critical-current density. Supercond. Sci Technol. 18 (2005) 997-1002.

Chen, D., Pardo, E., Gu, C., : Critical-state and eddy-current ac susceptibilities of conducting cylinders. Supercond. Sci Technol. 18 (2005) 1280-1289. (not IEE SAS).

Chovanec, F., Ušák, P., : Temperature oscillations in thin metallic tapes with transport current at liquid nitrogen temperature Cryogenics 45 (2005) 129-133.

Jakovenko, J., Husák, M., Lalinský, T., : Optimization of GaAs MEMS structures for microwave power sensor. In: Nanotechnology Conf. and Trade Show. Boston: Nano Sci Technol. Inst., 2005. ISBN 0-9767985-2-2. P. 606-609.

Kallel, N., Fröhlich, K., Pignard, S., Oumezzine, M., Vincent, H., : Structure, magnetic and magnetoresistive properties of La0.7Sr0.3Mn1−xSnxO3 samples (0 ≤ x ≤ 0.20). J. Alloys Compounds 399 (2005) 20-26.

Karapetrov, G., Fedor, J., Iavarone, M., Rosenmann, D., Kwok, W., : Direct observation of geometrical phase transitions in mesoscopic superconductors by scanning tunneling microscopy. Phys. Rev. Lett. 95 (2005) 167002.

Karapetrov, G., Fedor, J., Iavarone, M., Marshall, M., Divan, R., : Imaging of vortex states in mesoscopic superconductors. Applied Phys. Lett. 87 (2005) 162515.

Klinčok, B., Gömöry, F., Pardo, E., : The voltage signal on a superconducting wire in AC transport. Supercond. Sci Technol. 18 (2005) 694-700.

Kopera, Ľ., Melišek, T., Kováč, P., Pitel, J., : The design and performance of a Bi-2223/Ag magnet cooled by a single-stage cryocooler. Supercond. Sci Technol. 18 (2005) 977-984.

Kordoš, P., Heidelberg, G., Bernát, J., Fox, A., Marso, M., Lüth, H., : High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors. Applied Phys. Lett. 87 (2005) 143501-143504.

Kordoš, P., Bernát, J., Marso, M., : Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT. Microelectronics J. 36 (2005) 438-441.

Kordoš, P., Bernát, J., Marso, M., Lüth, H., Rampazzo, F., Tamiazzo, G., Pierobon, R., Meneghesso, G., : Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors. Applied Phys. Lett. 86 (2005) 253511.

Kordoš, P., Bernát, J., Heidelberg, G., Marso, M., : Performance of AlGaN/GaN heterostructure field-effect transistors for high-frequency and high-power electronics Advances in Electrical and Electronic Engn. 4 (2005) 67-70.

Korytár, D., Baumbach, T., Ferrari, C., Helfen, L., Verdi, N., Mikulík, P., Kubena, A., Vagovič, P., : Monolithic two-dimensional beam compressor for hard x-ray beams. J. Phys. D: Appl. Phys. 38 (2005) A208-A212.

Kováč, P., Melišek, T., Dhalle, M., den Ouden, A., Hušek, I., : Critical currents of MgB2 wires prepared in situ and ex situ subjected to axial stress. Supercond. Sci Technol. 18 (2005) 1374-1379.

Kováč, P., Melišek, T., Hušek, I., : Ic anisotropy of in situ made MgB2 tapes. Supercond. Sci Technol. 18 (2005) L45-L48.

Kováč, P., Hušek, I., Melišek, T., Štrbik, V., : Basic properties of rectangular MgB2/FeNiCo and MgB2/Fe wires made in situ. Supercond. Sci Technol. 18 (2005) 856-860.

Kováč, P., Masti, M., Lehtonen, J., Kopera, Ľ., Kawano, K., Abell, S., Metz, B., Dhalle, M., : Comparison and analysis of Hall probe scanning, magneto-optical imaging and magnetic knife measurements of Bi-2223/Ag tape. Supercond. Sci Technol. 18 (2005) 805-812.

Kováč, P., Hušek, I., Melišek, T., Dhalle, M., Müller, M., den Ouden, A., : The effect of shape and deformation in ex situ MgB2–W/Fe composite wires. Supercond. Sci Technol. 18 (2005) 615-622.

Kuzmany, H., Pfeiffer, R., Simon, F., Kramberger, C., Hulman, M., Costa, P., : Physics and chemistry inside nanotubes. Fullerenes Nanotubes and Carbon Nanostr. 13 (SUPPL. 1) (2005) 179-188. (Not IEE SAS).

Kuzmík, J., Bychikhin, S., Neuburger, M., Dadgar, A., Krost, A., Kohn, E., Pogany, D., : Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon. IEEE Trans. Electron Dev. 52 (2005) 1698-1705.

Kuzmík, J., Carlin, J., Kostopoulos, T., Konstantinidis, G., Georgakilas, A., Pogany, D., : Technology, properties and limitations of state-of-the-art InAlN/GaN HEMTs. In: 63rd Device Research Conf. Santa Barbara 2005. Conf. Digest p. 57-58.

Lalinský, T., Držík, M., Chlpík, J., Krnáč, M., Haščík, Š., Mozolová, Ž., Kostič, I., : Thermo-mechanical characterization of micromachined GaAs-based thermal converter using contactless optical methods. Sensors Actuators 123-124 (2005) 99-105.

Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., Kordoš, P., : Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.

Li, X., Xu, Y., Chromik, Š., Štrbik, V., Odier, P., De Barros, D., Sobolewski, R., : Time-resolved carrier dynamics in Hg-based high-temperature superconducting photodetectors. IEEE Trans. Applied Supercond. 15 (2005) 622-625.

Lupták, R., Fröhlich, K., Rosová, A., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Growth of gadolinium oxide films for advanced MOS structure. Microelectr. Engn. 80 (2005) 154-157.

Lupták, R., Fröhlich, K., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Structure and electrical properties of the thin Gd2O3 films. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 200-203.

Machajdík, D., Kobzev, A., Fröhlich, K., : Complementarity of X-ray diffraction and RBS in thin film characterization. Vacuum 78 (2005) 455-461.

Majoros, M., Glowacki, B., Campbell, A., Levin, G., Barnes, P., Polák, M., : AC losses in striated YBCO coated conductors. IEEE Trans. Applied Supercond. 15 (2005) 2819-2822.

Morvic, M., Betko, J., : Planar Hall effect in Hall sensors made from InP/InGaAs heterostructure. Sensors Actuators A 120 (2005) 130-133.

Navau, C., Sanchez, A., Pardo, E., Chen, D., Bartolome, E., Granados, X., Puig, T., Obradors, X., : Critical state in finite type-II superconducting rings. Phys. Rev. B 71 (2005) 214507.(not IEE SAS).

Németh, R., Moško, M., : Hartree-Fock simulation of persistent current in rings with single scatterer. Acta Physica Polonica A 108 (2005) 795.

Nishida, A., Taka, C., Chromik, Š., Durný, R., : Critical properties of MgB2 thin films on NbN/Si substrate under perpendicular magnetic fields. Physica C 426-431 (2005) 340 – 344.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

Nurgaliev, T., Blagoev, B., Mozhaeva, J., Mozhaev, P., Miteva, S., Mateev, E., Donchev, I., Štrbik, V., Beňačka, Š., : Electrical characteristics of HTS YBCO films in superconducting-ferromagnetic structures deposited on LaAlO3 and NdGaO3 substrates Nanoscience & Nanotechnology 5 (2005) 1-3.

Oboňa, J., Chromik, Š., Machajdík, D., Kostič, I., Kadlečíková, M., : Synthesis and electrical properties of thin films of fullerites on the various substrates Acta Physica Slovaca 55 (2005) 411-416.

Oemry, F., Diantoro, M., Sutjahja, I., Tjia, M., Kopera, Ľ., Bonfait, G., Kováč, P., : Variation of vortex structure characteristics of Bi-2223/Ag superconducting tapes with respect to applied magnetic field direction. Physica C 426-431 (2005) 396-401.

Osvald, J., : Electrical properties of inhomogeneous Schottky diodes In: New development in semiconductor research. Ed. T.S.Miller. New York: Nova Sci Publ. 2005. ISBN 1-59454-575-8. P. 113-138.

Osvald, J., : Ohmic contacts to moderately doped semiconductors—are they really Ohmic or low-barrier Schottky contacts?. Semicond. Sci Technol. 20 (2005) 611-614.

Osvald, J., Kuzmík, J., Konstantinidis, G., Lobotka, P., Georgakilas, A., : Temperature dependence of GaN Schottky diodes I–V characteristics. Microelectronic Engn. 81 (2005) 181-187.

Pachla, W., Kováč, P., Hušek, I., Melišek, T., Müller, M., Štrbik, V., Mazur, A., Presz, A., : The effect of hydrostatic extrusion on the Jc(B) characteristic of ex situ MgB2 wires. Supercond. Sci Technol. 18 (2005) 552-556.

Pardo, E., Sanchez, A., Chen, D., Navau, C., : Theoretical analysis of the transport critical-state ac loss in arrays of superconducting rectangular strips. Phys. Rev. B 71 (2005) 134517.(not IEE SAS).

Písečný, P., Harmatha, L., Jakabovič, J., Búc, D., Fröhlich, K., : Electrical characterization of Ni/La2O3 high-k dielectric gate stack for advanced CMOS technology. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 94-97.

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmík, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., Stecher, M., : A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique, IEEE Electron Device Lett. 26 (2005) 916-918.(Not IEE SAS).

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmík, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., Stecher, M., : Predictive device simulation for ESD protection structures validated with transient interferometric thermal – mapping experiments. In: ESSDERC’05. Eds. G. Ghibaudo et al. ISBN0-7803-9203-5. Piscataway, IEEE 2005. P. 411-414.

Rufer, L., Torres, A., Mir, S., Alam, A., Lalinský, T., Chan, Y., : SAW chemical sensors based on AlGaN/GaN piezoelectric material system: acoustic design and packaging considerations. In: EMAP 2005. Tokyo: Tokyo IT 2005. P. 204-208.

Sedlačková, K., Lobotka, P., Vávra, I., Radnóczi, G., : Structural, electrical and magnetic properties of carbon–nickel composite thin films. Carbon 43 (2005) 2192-2198.

Serényi, M., Betko, J., Nemcsics, A., Khanh, N., Basa, D., Morvic, M., : Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films. Microelectr. Reliability 45 (2005) 1252.

Šagátová-Perďochová, A., Melov, V., Bešše, I., Dubecký, F., Nečas, V., Haupt, L., : Active area of GaAs pad detector tested by x-ray beam. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 161-194.

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Zaťko, B., : Guard-ring and charge collection efficiency of GaAs detector Advances in Electrical and Electronic Engn. 4 (2005) 75-78.

Šouc, J., Gömöry, F., Vojenčiak, M., : Calibration free method for measurement of the AC magnetization loss. Supercond. Sci Technol. 18 (2005) 592-595.

Španková, M., Vávra, I., Chromik, Š., Harasek, S., Lupták, R., Šoltýs, J., Hušeková, K., : Structural properties of Y2O3 thin films grown on Si(1 0 0) and Si(1 1 1) substrates,. Materials Sci Engn. B 116 (2005) 30-33.

Štrichovanec, P., Novák, J., Vávra, I., Kúdela, R., Kučera, M., Šoltýs, J., : QWIP structures prepared on wet-etched non-planar GaAs. Phys. Status Solidi c 2 (2005) 1384-1388.

Takács, S., : The contribution of edge currents to coupling losses of flat superconducting cables. Supercond. Sci Techn. 18 (2005) 187-192.

Takács, S., Gömöry, F., : Hysteresis and coupling losses of superconducting cables at additional change of the applied magnetic field. Supercond. Sci Technol. 18 (2005) 340-345.

Ťapajna, M., Harmatha, L., Hušeková, K., Fröhlich, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor, Measurement Sci Rev. 5 (2005) 42.

Ťapajna, M., Harmatha, L., Fröhlich, K., Hušeková, K., De Gendt, S., Schram, T., : Electrical characterisation of Ru/Hf-based high-k dielectric gate stacks for advanced CMOS technology. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 98-101.

Ueda, H., Otani, R., Nishio, Y., Gendiar, A., Nishino, T., : Critical point of a symmetric vertex. J. Phys. Soc. Japan. 74 (2005) 1871-1872.

Ulbricht, A., Duchateau, J., Fietz, W., Ciazynski, D., Fillunger, H., Fink, S., Heller, R., Maix, R., Nicollet, S., Raff, S., Ricci, M., Salpietro, E., Zahn, G., Zanino, R., Bagnasco, M., Besette, D., Bobrov, E., Bonicelli, T., Bruzzone, P., Darweschsad, M., Decool, P., Dolgetta, N., della Corte, A., Formisano, A., Grünhagen, A., Hertout, P., Herz, W., Huguet, M., Hurd, F., Ilyin, Y., Komarek, P., Libeyre, P., Marchese, V., Marinucci, C., Martinez, A., Martone, R., Martovetsky, N., Michael, P., Mitchell, N., Nijhuis, A., Nöther, G., Nunoya, Y., Polák, M., Portone, A., Savoldi, R., Spadoni, M., Susser, M., Turtú, S., Vostner, A., Takahashi, Y., Wüchner, F., Zani, L., : The ITER toroidal field model coil project. Fusion Engn. Design 73 (2005) 189-327.

Zanino, R., Egorov, S., Kim, K., Martovetsky, N., Nunoya, Y., Okuno, K., Salpietro, E., Sborchia, C., Takahashi, Y., Weng, P., Bagnasco, M., Savoldi, R., Polák, M., Formisano, A., Zapretilina, E., Shikov, A., Vedernikov, G., Ciazynski, D., Zani, L., Muzzi, L., Ricci, M., della Corte, A., Sugimoto, M., Hamada, K., Portone, A., Hurd, F., Mitchell, N., Nijhuis, A., Ilyin, Y., : Preparation of the ITER poloidal field conductor insert (PFCI) test. IEEE Trans. Applied Supercond. 15 (2005) 1346-1350.

Zanino, R., Bagnasco, M., Bellina, F., Bonicelli, T., della Corte, A., Di Zenobio, A., Fietz, W., Formisano, A., Heller, R., Ilyin, Y., Marchese, V., Martone, R., Muzzi, L., Nijhuis, A., Polák, M., Ribani, P., Salpietro, E., Savoldi, R., Turtú, S., Verdini, L., Zahn, G., : Current distribution measurement on the ITER-type NbTi bus bar III. IEEE Trans. Applied Supercond. 15 (2005) 1407-1410.

Zaťko, B., Dubecký, F., Ščepko, P., Melov, V., Herms, M., Haupt, L., : Performance study of monolithic line radiation detector based on semi-insulating GaAs using X-ray source. Nuclear Instr. and Methods in Phys. Res. A 551 (2005) 78-82.

Zola, D., Gömöry, F., Polichetti, M., Strýček, F., Šouc, J., Kováč, P., Pace, S., : Analysis of coupling losses in multifilamentary untwisted BSCCO/Ag tapes through a.c. susceptibility measurements. IEEE Trans. Applied Supercond. 15 (2005) 2903-2906.