Ing. Sobota Michal, PhD.

Feriancová, L., Cigáň, M., Kožíšek, J., Gmucová, K., Nádaždy, V., Dubaj, T., Sobota, M., Novota, M.,  Weis, M., and Putala, M.: Dithienylnaphthalenes and quaterthiophenes substituted with electron-withdrawing groups as n-type organic semiconductors for organic field-effect transistors J. Mater. Chem. C 10 (2022) 10058-10074. (Not IEE SAS)

1. Li, J.: Front. Chem. 11 (2023) 1280816.
2. Zhou, Y.: Materials 16 (2023) 6645
3. Akiyama, M.: Bull. Chem. Soc Japan 97 (2024) uoae025.

Egyenes-Pörsök, E., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.:Growth of α- and β-Ga₂O₃ epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002. (Not IEE SAS)

1. Tak, B.R.: J. Phys. D 54 (2021) 453002.
2. Zhou, J.G.: J. Mater. Res. 36 (2021) 4832.
3. Yang, D.: Electron. Mater. Lett. 18 (2022) 113.
4. Biswas, M.: APL Mater. 10 (2022) 060701.
5. Liu, Z.: J. Phys. D 56 (2023) 093002.
6. Jewel, M.U.: Physica Status Solidi A 220 (2023) 2300036.
#     7. Jewel M.U.: Proc. SPIE 12422 (2023) 1242204.
8. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
9. Wang, L.X.: ACS Omega 9 (2024) 25429.
10. Zeng, H.: Materials 17 (2024) 4008.
11. Myasoedov, A.V.: Mater. Sci Semicond. Process. 184 (2024) 108778.