2025

Gömöry, F., Šouc, J., Solovyov, M., Ries, R., Hintze, C., Landvogt, S., Pekarčíková, M., Christensen, J.J., Bahl, C.R.H., Jørgensen, N.O., and Wulff, A.C.: Hysteresis and coupling loss in filamentized REBCO tapes, IEEE Trans. Applied Supercond. 35 (2025) 5900205. (VEGA  2/0098/24, APVV 20-0056, EUREKA Eurostars-2 project E! 115264, FILAMENTS4FUSION)

Kordoš, P., Gregušová, D., Mikulics, M., and Hardtdegen, H.: Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator, AIP Adv. 15 (2025) 025028. (VEGA 2/0068/21, APVV 21-0365 )

Kozak, A.O., Porada, O.K., Manzhara, V.S., Bratus, V.Y., Ivashchenko, V.I., Ivashchenko, L.A., Orovčík, Ľ., Pribusová Slušná, L., Piryatinski, Y.P., Bukivskij, P.M., Tolochko, A.S., and Shynkarenko, V.K.: The low-temperature photoluminescence of thin PECVD Si-C-N-H films: an effect of hydrogenation, Optical Mater. 160 (2025) 116751.

Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., and Konstantinidis, G.: Growth and performance of n++ GaN cap layer for HEMTs applications, Mater. Sci Semicond. Process. 185 (2025) 108959.

Babčenko, O., Sojková, M., Hulman, M., Čermák, J., Kromka, A., Claerbout, V.E.P., Nicolini, P., López-Carballeira, D., Kuliček, J., and Rezek, B.: Self-oriented MoS₂ nanosheets on microcrystalline diamond layers: controlled synthesis and optoelectronic effects, ACS Applied Electron. Mater. 7 (2025) 1004-1018. (APVV 21-0231, 19-0365, 23-0564, VEGA 2/0059/21, 2/0046/23)