Xiao, X., Mao, Y., Meng, B., Ma, G., Hušeková, K., Egyenes, F., Rosová, A., Dobročka, E., Eliáš, P., Ťapajna, M., Gucmann, F., and Yuan, C.: Phase-dependent phonon heat transport in nanoscale gallium oxide thin films, Small 20 (2024) 2309961.
1. Yan, S.H.: Applied Phys. Lett. 125 (2024) 022202.
Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.
1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
2. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
3. Akyol, F.: Mater. Sci Semicond. Process. 170 (2024) 107968.
4. Saquib, T.: J. Applied Phys. 135 (2024) 065701.
5. Hu, Y.: Mater. Sci Semicond. Process. 178 (2024) 108453.
6. Ferdous, N.: Sci Rep. 14 (2024) 12748.
7. Su, J.: J. Mater. Sci Technol. 210 (2025) 20.
Gucmann, F., Nádaždy, P., Hušeková, K., Dobročka, E., Priesol, J., Egyenes, F., Šatka, A., Rosová, A., and Ťapajna, M.: Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD, Mater. Sci Semicond. Process. 156 (2023) 107289.
1. Jewel, M.U.: Physica Status Solidi A 220 (2023) 2300036.
2. He, H.: Electronics 12 (2023) 4315.
3. Zhang, Y.F.: Nanotechnol. 35 (2024) 165502.
4. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
5. Zhou, X.L.: Nanomater. 14 (2024) 978.
Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.
1. Girolami, M.: J. Mater. Chem. C 11 (2023) 3759.
2. Aarik, L.: Crystal Growth Design 23 (2023) 5899.
3. Chen, S.J.: J. Alloys Comp. 989 (2024) 174388.
4. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
5. He, Y.J.: Mater. 17 (2024) 1870.
6. Hu, Y.: Mater. Sci Semicond. Process. 178 (2024) 108453.
7. Aarik, L.: J. Mater. Chem. C 12 (2024) 10562.
Rosová, A., Maťko, I., and Dobročka, E.: BaZrO3 dopant interactions during MgB2 wire formation by modifed internal magnesium difusion process, Applied Phys. A 127 (2021) 152.
1. Durmus, H.: J. Mater Sci-Mater. Electron. 33 (2022) 17079.
Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M., Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.
1. Zhao, K.: Nanomater. 12 (2022) 172.
2. Goikhman, B.V.: J. Mater. Chem. A 10 (2022) 8413.
3. Singh, R.: J. Mater Sci-Mater. Electron. 33 (2022) 6969.
4. Fedorov, F.S.: Applied Surface Sci 606 (2022) 154717.
Bareli, G., Chromik, Š., Camerlingo, C., Talacko, M., Rosová, A., Španková, M., Štrbik, V., Sojková, M., and Jung, G.: Substrate influence on low energy electron beam processing of YBa2Cu3O7−δ thin films, Applied Surface Sci 535 (2021) 147624.
1. Ivanov, Y.F.: Phys. Mesomechan. 25 (2022) 18.
2. Karthikeyan, M.: J. Alloys Comp. 969 (2023) 172230.
3. Niu, X.H.: Ceramics Inter. 50 (2024) 10446.
4. Shi, Z.J.: Applied Phys. Lett. 124 (2024) 152602.
Hasenöhrl, S., Dobročka, E., Stoklas, R., Gucmann, F., Rosová, A., and Kuzmík, J.: Growth and Properties of N-polar InN/InAlN Heterostructures, Phys. Status Solidi A 217 (2020) 2000197.
1. Li, Y.Z.: Semicond. Sci Technol. 39 (2024) 075005.
Alpern, H., Periyasamy, M., Tannous, J., Jung, G., Zaytseva, I., Rosová, A., Chromik, Š., Štrbík, V., Talacko, M., Yochelis, S., Yacoby, Y., Millo, O., and Paltiel, Y.: Increasing the transition temperature of high-TC superconductor thin films by organic linking of gold nanoparticles, J. Supercond. Novel Magnet. 33 (2020) 1941–1948.
1. Bassaid, S.: Molecular Phys. 119 (2021) e1802073.
2. Prischepa, S.: Supercond. Sci Technol. 34 (2021) 115021.
3. Prischepa, S.L.: J. Phys.-Cond. Matt. 35 (2023) 313003.
Kováč, P., Hušek, I., Pérez, N., Rosová, A., Berek, D., Gelušiaková, B., Kopera, L., Melišek, T., and Nielsch, K.: Structure and properties of barrier-free MgB2 composite wires made by internal magnesium diffusion process, J. Alloys Comp. 829 (2020) 154543.
1. Yetis, H.: Physica B 593 (2020) 412277.
2. Kambe, H.: Applied Phys. Express 14 (2021) 025504.
3. Choi, S.: J. Alloys Comp. 864 (2021) 158867.
4. Liu, H.R.: J. Supercond. Novel Magnet. 35 (2022) 429.
5. Maeda, M.: Ceram. Inter. 48 (2022) 6539.
6. Yetis, H : Supercond. Sci Technol. 35 (2022) 045012.
* 7. Khan, M.R.U.K.: Adv. Mater. Res. 1166 (2021) 1.
8. Ozaki, T.: Cond. Matter 7 (2022) 48.
# 9. Guan, D.: Xiyou Jinshu/Chinese J. Rare Metals 46 (2022) 497.
10. Herbirowo, S.: Inter. J. Technol. 14 (2023) 1570.
11. Sene, F.C.D.: Mater. Today Comm. 38 (2024) 107618.
12. Jung, S.G.: J. Alloys Comp. 995 (2024) 174816.
Chauhan, P., Hasenöhrl, S., Vančo, Ľ., Šiffalovič, P., Dobročka, E., Machajdík, D., Rosová, A., Gucmann, F., Kováč, J.jr., Maťko, I., Kuball, M., and Kuzmík, J.: A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation, CrystEngComm 22 (2020) 130-141.
1. Chen, W.C.: Surface Topography-Metrol. Propert. 11 (2023) 024002.
Kováč, P., Hušek, I., Rosová, A., Melišek, T., Kováč, J., Kopera, L., Scheiter, J., and Haessler, W.: Strong no-barrier SS sheathed MgB2 composite wire, Physica C 560 (2019) 40-44.
1. Karaboga, F.: J. Mater. Sci-Mater. Electron. 31 (2020) 7141.
2. Liu, H.R.: J. Supercond. Novel Magnet. 35 (2022) 429.
3. Yetis, H : Supercond. Sci Technol. 35 (2022) 045012.
# 4. Guan, D.: Xiyou Jinshu/Chinese J. Rare Metals 46 (2022) 497.
Sojková, M., Végso, K., Mrkývkova, N., Hagara, J., Hutár, P., Rosová, A., Čaplovičová, M., Ludacka, U., Skákalová, V., Majková, E., Šiffalovič, P., and Hulman, M.: Tuning the orientation of few-layer MoS2 films using one-zone sulfurization, RSC Adv. 9 (2019) 29645-29651.
1. Balasubramanyam, S.: ACS Applied Mater. Interfaces 12 (2020) 3873.
2. Cichocka, M.O.: ACS Applied Mater. Interfaces 12 (2020) 15867.
3. Lee, J.: ACS Nano 14 (2020) 17114.
4. Navarro-Gamarra, K.E.: J. Phys. Chem. C 125 (2021) 2005.
5. Panasci, S.E.: Nanomater. 12 (2022) 182.
6. Krbal, M.: Applied Phys. Lett. 121 (2022) 192105.
7. Zulkifli, N’A.: Nanoscale Adv. 5 (2023) 879.
Rosová, A., Hušek, I., Kulich, M., Melišek, T., Kováč, P., Dobročka, E., Kopera, L., Scheiter, J., and Haessler, W.: Microstructure of undoped and C-doped MgB2 wires prepared by an internal magnesium diffusion technique using different B powders, J. Alloys Comp. 764 (2018) 437e445.
1. Maeda, M.: J. Alloys Comp. 787 (2019) 1265.
2. Iida, K.: Supercond. Sci Technol. 33 (2020) 043001.
3. Olatunji, S.O.: Comput. Mater. Sci 192 (2021) 110392.
4. Guan, D.D.: Supercond. Sci Technol. 34 (2021) 115007.
# 5. Guan, D.: Xiyou Jinshu/Chinese J. Rare Metals 46 (2022) 497.
Balog, M., Rosová, A., Szundiová, B., Orovčík, Ľ., Krížik, P., Švec, P.Jr., Kulich, M., Kopera, L., Kováč, P., Hušek, I., and Ibrahim, A.M.H.: HITEMAL-an outer sheath material for MgB2 superconductor wires: The effect of annealing at 595–655 °C on the microstructure and properties, Mater. Design 157 (2018) 12–23.
1. Karaboga, F.: J. Mater. Sci-Mater. Electron. 31 (2020) 7141.
# 2. Prokhasko, L.: Inter. J. Adv. Sci Technol. 29 (2020) 2668.
# 3. Prokhasko, L.S.: IOP Conf. Ser.: Earth Environ. Sci 839 (2021) 052033.
4. Gao, T.: Mater. Design 215 (2022) 110432.
5. Sadeghi, B.: Mater. Character. 188 ( 2022) 111913.
6. Gao, T.: J. Alloys Comp. 920 (2022) 165985.
7. Gao, T.: Composit. Comm. 40 (2023) 101629.
8. Herbirowo, S.: Inter. J. Technol. 14 (2023) 1570.
Kováč, P., Hušek, I., Rosová, A., Kulich, M., Kováč, J., Melišek, T., Kopera, L., Balog, M., and Krížik, P.: Ultra-lightweight superconducting wire based on Mg, B, Ti and Al, Sci Reports 8 (2018) 11229.
1. Prikhna, T.A.: IEEE Trans. Applied Supercond. 29 (2019) 6200905.
2. Patel, D.: Scripta Mater. 178 (2020) 198.
3. Fujii, H.: Physica C 576 (2020) 1353704.
4. Bovone, G.: Supercond. Sci Technol. 33 (2020) 125003.
5. Patel, D.: ACS Applied Mater. Interf. 13 (2021) 3349.
6. Prikhna, T.: IEEE Trans. Applied Supercond. 31 (2021) 8000705.
# 7. Fujii, H.: Physica C 591 (2021) 1353972.
8. Kapolka, M.: Sci Rep. 12 (2022) 7030.
9. Patel, D.: ACS Applied Mater. Interf. 14 (2022) 3418.
10. Fujii, H.: Physica C 603 (2022) 1354172.
# 11. Guan, D.: Xiyou Jinshu/Chinese J. Rare Metals 46 (2022) 497.
12. Chen, W.W.: Supercond. Sci Technol. 37 (2024) 075005.
13. Miryala, M.: J. Magnesium Alloys 12 (2024) 1257.
Rosová, A., Kulich, M., Kováč, P., Brunner, B., Scheiter, J., and Haessler, W.: The effect of boron powder on the microstructure of MgB2 filaments prepared by the modified internal magnesium diffusion technique, Supercond. Sci Technol. 30 (2017) 055001.
1. Zhang, Z.: Supercond. Sci Technol. 32 (2019) 055009.
2. Arvapalli, S.S.: Supercond. Sci Technol. 33 (2020) 115009.
3. Arvapalli, S.S.: Mater. Sci Engn. B 265 (2021) 115030.
4. Yang, L.Q.: Crystals 11 (2021) 278.
5. Guan, D.D.: Supercond. Sci Technol. 34 (2021) 115007.
# 6. Guan, D.: Xiyou Jinshu/Chinese J. Rare Metals 46 (2022) 497.
7. Guo, C.: Mater. Today Phys. 37 (2023) 101217.
Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.
1. Toyoshima, R.: Chem. Comm. 56 (2020) 14905.
2. Wang, J.J.: Mater. Sci Semicond. Process. 159 (2023) 107372.
Kováč, P., Balog, M., Hušek, I., Kopera, L., Krížik, P., Rosová, A., Kováč, J., Kulich, M., and Čaplovičová, M.: Properties of near- and sub-micrometre Al matrix composites strengthened with nano-scale in-situ Al2O3 aimed for low temperature applications, Cryogenics 87 (2017) 58–65.
1. Kannan, C.: Mater. Today-Proc. 22 (2020) 1507.
2. Deschamps, I.S.: Metals 12 (2022) 2073.
# 3. Guan, D.: Xiyou Jinshu/Chinese J. Rare Metals 46 (2022) 497.
4. Kovacs, C.J.: IEEE Trans. Applied Supercond. 33 (2023) 3601206.
Hušek, I., Kováč, P., Melišek, T., Kulich, M., Rosová, A., Kopera, L., and Szundiová, B.: Superconducting MgB2 wires with vanadium diffusion barrier, Supercond. Sci Technol. 30 (2017) 105008.
1. Ahmad, I.: IEEE Trans. Applied Supercond. 30 (2020) Iss. 8.
2. Wang, Z.K.: Supercond. Sci Technol. 37 (2024) 085017.
Kováč, P., Hušek, I., Melišek, T., Kulich, M., Rosová, A., Kováč, J., Kopera, L., Balog, M., Krížik, P., and Orovčík, Ľ.: Lightweight Al-stabilized MgB2 conductor made by the IMD process, Supercond. Sci Technol. 30 (2017) 115001.
1. Fujii, H.: Physica C 576 (2020) 1353704.
2. Zhang, J.: Acta Microscop. 29 (2020) 1695.
# 3. Fujii, H.: Physica C 591 (2021) 1353972.
# 4. Guan, D.: Xiyou Jinshu/Chinese J. Rare Metals 46 (2022) 497.
Brunner, B., Kováč, P., Rosová, A., Reissner, M., and Dobročka, E.: Properties of MgB2 wires doped with BaZrO3 nanopowder made by a modified internal magnesium diffusion process, Supercond. Sci Technol. 30 (2017) 115003.
1. Yetis, H.: Physica B 593 (2020) 412277.
2. Zhang, D.: Physica C 578 (2020) 1353749.
Brunner, B., Rosová, A., Kováč, P., Reissner, M., and Dobročka, E.: Effect of Dy2O3 doping on phase formation and properties of MgB2 wires made by the modified internal magnesium diffusion process, Supercond. Sci Technol. 30 (2017) 025004.
1. Zhang, D.: IOP Conf. Ser. 279 (2017) UNSP 012025.
2. Li, W.: J. Rare Earths 37 (2019) 124.
Sojková, M., Chromik, Š., Rosová, A., Dobročka, E., Hutár, P., Machajdík, D., Kobzev, A.P., and Hulman, M.: MoS2 thin films prepared by sulfurization, Proc. SPIE 10354 (2017) 103541K-1.
1. Kokalj, D.: Coatings 10 (2020) 755.
2. Ghosh, S.: Energy 203 (2020) 117918.
3. Gupta, D.: Mater. Chem. Phys. 276 (2022) 125422.
Haessler, W., Kováč, P., Scheiter, J., Rosová, A., and Pachla, W.: MgB2 multicore wire prepared by IMD technology – investigation of the MgB2 layer formation during annealing , IEEE Trans. Applied Supercond. 27 (2017) 6200504.
1. Shimada, Y.: J. Alloys Compounds 740 (2018) 305.
2. Liu, H.: Mater. Lett. 227 (2018) 305.
3. Sarno da Silva, L.B.: IEEE Trans. Applied Supercond. 29 (2019) 6200505.
4. Liu, H.R.: J. Supercond. Novel Magnet. 35 (2022) 429.
5. Chen, W.W.: Supercond. Sci Technol. 37 (2024) 075005.
Chromik, Š., Sojková, M., Vretenár, V., Rosová, A., Dobročka, E., and Hulman, M.: Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition, Applied Surface Sci 395 (2017) 232-236.
1. Li, D.: Applied Surface Sci 421 (2017) 884.
2. Hao, L.: Nanoscale Research Lett. 12 (2017) 567.
3. Yao, J.: ACS Applied Mater. Interfaces 10 (2018) 38166.
4. Rozenfeld, S.: Bioelectrochem. 123 (2018) 201.
5. Wang, W.: J. Mater. Chem. C 6 (2018) 6641.
6. Banday, S.: J. Tribol.-Trans. ASME 141 (2019) 022003.
7. Wu, Z.: Mater. Today Nano 12 (2020) 100092.
8. Yang, G.: IEEE Photon. J. 13 (2021) 2200105.
9. Yadav, G.: Optical Mater. 131 ( 2022) 112603.
10. Giannazzo, F.: Applied Surface Sci 631 (2023) 157513.
11. Susanto, I.: Nanomater. 14 (2024) 732.
Kováč, P., Hušek, I., Pachla, W., Melišek, T., Kulich, M., Rosová, A., and Kopera, Ľ.: Effect of cold isostatic pressing on the transport current of filamentary of MgB2 wire made by the IMD process, Supercond. Sci Technol. 26 (2016) 075004.
1. Xu, D.: IEEE Trans. Applied Supercond. 27 (2017) 6200304.
2. Shimada, Y.: J. Alloys Compounds 740 (2018) 305.
3. Wang, Q.: Inter. J. Modern Phys. B 34 (2020) 2050012.
4. Wan, F.: Scripta Materialia 239 (2024) 115784.
Kulich, M., Kováč, P., Hain, M., Rosová, A., and Dobročka, E.: High density and connectivity of a MgB2 filament made using the internal magnesium diffusion technique, Supercond. Sci Technol. 29 (2016) 035004.
1. Xu, D.: IEEE Trans. Applied Supercond. 27 (2017) 6200304.
2. Liu H.: Rare Metal Mater. Engn. 47 (2018) 1020.
3. Liu, H.: Mater. Lett. 227 (2018) 305.
4. Yetis, H.: Physica B 593 (2020) 412277.
5. Bovone, G.: Supercond. Sci Technol. 33 (2020) 125003.
6. Yetis, H.: Physica C 581 (2021) 1353807.
7. Oh, S.H.: Progress in Supercond. Cryogen. 23 (2021) 14.
8. Oh, Y.S.: Metals Mater. Inter. 28 (2022) 1697.
Rosová, A., Kováč, P., Hušek, I., Brunner, B., and Dobročka, E.: Microstructure of MgB2 superconducting wire prepared by internal magnesium diffusion and in-situ powder-in-tube processes – Secondary phase intergrain nanolayers as an oxygen content indicator. Physica C 516 (2015) 1-9.
1. Wang, D.: Supercond. Sci Technol. 28 (2015) 105013.
2. Mackinnon, I.D.R. .: Supercond. Sci Technol. 30 (2017) 055004.
# 3. Herbirowo, S.: Mater. Sci Forum 929 (2018) 27.
Rosová, A., Hušek, I., Kováč, P., Dobročka, E., and Melišek, T.: Microstructure of MgB2 superconducting wire prepared by internal magnesium diffusion process. J. Alloys Comp. 619 (2015) 726-732.
1. Ye, S.J.: IEEE Trans. Applied Supercond. 25 (2015) 6200807.
2. Ye, S.: Supercond. Sci Technol. 29 (2016) 113004.
3. Yetis, H.: Physica B 593 (2020) 412277.
Kováč, P., Hušek, I., Rosová, A., Kulich, M., Melišek, T., Kopera, Ľ., and Brunner, B.: Properties of MgB2 wires made by internal magnesium diffusion into different boron powders. Supercond. Sci Technol. 28 (2015) 095014.
1. Xu, D.: Supercond. Sci Technol. 29 (2016) 045009.
2. Liu, Y.: J. Mater. Chem. 4 (2016) 9469.
3. Ye, S.: Supercond. Sci Technol. 29 (2016) 113004.
4. Xu, D.: Supercond. Sci Technol. 29 (2016) 105019.
5. Xu, D.: IEEE Trans. Applied Supercond. 27 (2017) 6200304.
6. Liu, Y.: J. Alloys Compounds 697 (2017) 37.
7. Karaboga, F.: IEEE Trans. Applied Supercond. 28 (2018) 6200805.
8. Savaskan, B.: J. Alloys Comp. 961 (2023) 170893.
Čičo, K., Jančovič, P., Dérer, J., Šmatko, V., Rosová, A., Blaho, M., Hudec, B., Gregušová, D., Fröhlich, K., :Resistive switching in nonplanar HfO2-based structures with variable series resistance. J. Vacuum Sci Technol. B 33 (2015) 01A108.
1. Hardtdegen, A.: IEEE Inter. Memory Workshop 2016.
2. Hardtdegen, A.: IEEE Trans. Electron Dev. 65 (2018) 3229.
3. Lin, Chih-Y.: J. Phys. D 52 (2019) 095108.
4. Cueppers, F.: APL Mater. 7 (2019) 091105.
# 5. Yang, J.: ACS Applied Mater. Interfaces 13 (2021) 33244.
6. Ostrovskii, V.: Nanomater. 12 (2022) 63.
7. Yan, J.Q.: IEEE Trans. Nuclear Sci 70 (2023) 807.
Španková, M., Rosová, A., Dobročka, E., Chromik, Š., Vávra, I., Štrbik, V., Machajdík, D., Kobzev, A., and Sojková, M.: Structural properties of epitaxial La0.67Sr0.33MnO3 films with increased temperature of metal-insulator transition grown on MgO substrates. Thin Solid Films 583 (2015) 19-24.
1. Wang, H.: Thin Solid Films 599 (2016) 27.
2. Wang, H.: Thin Solid Films 621 (2017) 1.
3. Zhou, H.: Mater. Research Express 5 (2018) 015001.
4. Xia, W.: Nanoscale Res. Lett. 15 (2020) 9.
5. Yan, F.: Thin Solid Films 698 (2020) 137872.
6. Prajapat, C.L.: ACS Applied Electron. Mater. 2 (2020) 2636.
7. Suresh, S.: Mater. Today Comm. 36 (2023) 106657.
8. Priyadarshinee, S.: J. Supercond. Novel Magnetism 37 (2024) 139.
9. Suresh, S.: J. Molecul. Struct. 1321 (2025) 139646.
Hušek, I., Kováč, P., Rosová, A., Melišek, T., Pachla, W., Hain, M., : Advanced MgB2 wire made by internal magnesium diffusion process. J. Alloys Comp. 588 (2014) 366-369.
1. Maeda, M.: J. Alloys Compounds 636 (2015) 29.
* 2. Kováč, J.: In MgB2 superconducting wires. Ed. R. Flückiger. New Jersey: World Sci Publ. 2016. ISBN978-981-4725-58-3. P. 419.
3. Liu, Y.: J. Mater. Chem. 4 (2016) 9469.
4. Xu, D.: IEEE Trans. Applied Supercond. 27 (2017) 6200304.
5. Liu, Y.: J. Alloys Compounds 697 (2017) 37.
6. Akdogan, M.: J. Alloys Compounds 702 (2017) 399.
7. Karaboga, F.: IEEE Trans. Applied Supercond. 28 (2018) 6200805.
8. Yetis, H.: Physica B 593 (2020) 412277.
9. Avci, D.: Supercond. Sci Technol. 36 (2023) 075004.
Chromik, Š., Štrbik, V., Dobročka, E., Roch, T., Rosová, A., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Ralbovský, M., and Choleva, P.: LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers, Applied Surface Sci 312 (2014) 30-33.
1. Zhao, S.: Adv. Applied Ceram. 116 (2017) 180.
2. Jiang, J.: Ceramics Inter. 44 (2018) 3915.
3. Galik, G.: AIP Conf. Proc. 1996 (2018) 020011.
4. Ji, F.: Mater. Res. Express 6 (2019) 086326.
5. Dong, G.: Ceramics Inter. 45 (2019) 12162.
6. Shi, Q.: Adv. Electron. Mater. 5 (2019) 1900020.
7. Liu, S.: J. Micromech. Microengn. 29 (2019) 065008.
8. Yu, X.: J. Sol-Gel Sci. Technol. 90 (2019) 221.
9. Liu, Y.: Ceramics Inter. A 45 (2019) 24070.
10. Li, H.: J. Alloys Comp. 810 (2019) UNSP 151908.
11. Pu, X.: J. Material. Sci-Mater. Electr. 30 (2019) 19862.
12. Li, H.: J. Alloys Comp. 847 (2020) 156417.
13. Chu, K.: J. Material. Sci-Mater. Electr. 31 (2020) 12389.
14. Chu, K.: Ceramics Inter. 46 (2020) 7568.
15. Liu, Y.: Ceramics Inter. 47 (2021) 7674.
16. Guan, X.L.: Ceramics Inter. 47 (2021) 18931.
17. Guan, X.: J. Alloys Comp. 876 (2021) 160173.
18. Yang, S.: Ceramics Inter. 47 (2021) 29631.
19. Yu, Z.: Ceramics Inter. 47 (2021) 33202.
20. Yu, X.: Applied Surface Sci 570 (2021) 151221.
21. Guan, X.: J. Alloys Comp. 895 (2022) 162555.
22. Chaluvadi, S.K.: Applied Surface Sci 579 (2022) 152095.
23. Guan, X.: Applied Phys. A 128 (2022) 362.
24. Guan, X.L.: Ceramics Inter. 48 (2022) 11094.
25. Chu, K.L.: J. Alloys Comp. 902 (2022) 163691.
26. Guan, X.L.: Applied Phys. Lett. 121 (2022) 202203.
27. Wu, K.K.: Ceramics Inter. 49 (2023) 1344.
28. Yan, Y.X.: Ceramics Inter. 49 (2023) 669.
29. Sarkar, N.: Electron. Mater. Lett. 19 (2023) 384.
30. Gu, X.: Ceramics Inter. 49 (2023) A22952.
31. Chatterjee, S.: J. Applied Phys. 134 (2023) 064301.
# 32. Kang, J.G.: New Physics: Sae Mulli 73 (2023) 1-6.
Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J., Lee, W., Song, S., Paskaleva, A., Bauer, A., Frey, L., Fröhlich, K., Aarik, J., and Hwang, C.: Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes. ACS Applied Mater. Interfaces 6 (2014) 2486-2492.
1. Azevedo, J.: Energy & Environmen. Sci 7 (2014) 4044.
2. Jeon, W.: ACS Applied Mater. Interfaces 6 (2014) 21632.
3. Azevedo, J.: Nano Energy 24 (2016) 10.
4. Chirakkara, S .: Mater. Res. Express 3 (2016) 045023.
5. Head, A.R .: J. Phys. Chem. C 120 (2016) 243.
6. Porti, M.: IEEE Trans. Nanotechnol. 15 (2016) 986.
7. Niemela, J.-P.: Semicond. Sci Technol. 32 (2017) 093005.
8. Nafria, M.: ECS Trans. 79 (2017) 139.
9. Croizier, G.: TRANSDUCERS 2017. P. 1237.
10. Ruiz, A.: Applied Phys. Lett. 114 (2019) 093502.
11. Ros, C.: ACS Applied Mater. Interfaces 11 (2019) 29725.
12. Ruiz, A.: Microelectron. Engn. 216 (2019) 111048.
13. Mitronika, M.: Applied Surface Sci 541 (2021) 148510.
14. Ruiz, A.: IEEE Access 9 (2021) 90568.
15. Miquelot, A.: J. Mater. Sci 56 (2021) 10458.
16. Ruiz, A.: Solid-State Electron. 186 (2021) 108061.
17. Claramunt, S.: IEEE Trans. Nanotechnol. 22 (2023) 28.
Hudec, B., Paskaleva, A., Jančovič, P., Dérer, J., Fedor, J., Rosová, A., Dobročka, E., Fröhlich, K., :Resistiveswitching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface. Thin Solid Films 563 (2014) 10-14.
1. Castan, H.: Thin Solid Films 591 (2015) 55.
# 2. Liu, P.: Key Engn. Mater. 645 (2015) 572.
3. Liu, P.: IEEE 10th NEMS 2015. P. 585.
4. Alekseeva, L.: Japan. J. Applied Phys. 55 (2016) 08PB02.
5. Duenas, S.: IEEE 32nd Conf. Design Circuits Integr. Systems -DCIS 2017.
6. Niemela, Janne-P.: Semicond. Sci Technol. 32 (2017) 093005.
7. Stathopoulos, S.: Sci Rep. 7 (2017) 17532.
8. Chen, X.: J. Semicond. 38 (2017) 084003.
9. Rylkov, V.V.: J. Experiment. Theoret. Phys. 126 (2018) 353.
10. Duenas, S.: J. Electron. Mater. 47 (2018) 4938.
11. Nikiruy, K.E.: J. Comm. Technol. Electron. 64 (2019) 1135.
12. Park, S.-J.: J. Alloys Comp. 825 (2020) 154086.
13. Nikolaev, S.N.: Techn. Phys. 65 (2020) 243.
14. Siegel, S.: Adv. Electr. Mater. 7 (2021) 2000815.
15. Basnet, P.: ACS Applied Electron. Mater. 5 (2023) 1859.
Rosová, A., Kováč, P., Hušek, I., Kopera, Ľ., : Composition changes in thin-filament MgB2/Ti/GlidCop® wires heat treated at variable periods,. J. Alloys Compounds 572 (2013) 25-30.
1. AlZayed, N.S.: J. Alloys Comp. 594 (2014) 60.
Hudec, B., Hušeková, K., Rosová, A., Šoltýs, J., Rammula, R., Kasikov, A., Uustare, T., Mičušík, M., Omastová, M., Aarik, J., and Fröhlich, K.: Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor, J. Phys. D 46 (2013) 385304.
1. Pointet, J.: J. Vacuum Sci Technol. A 32 (2014) 01A120.
2. Wang, W.: Sci Reports 4 (2014) 4452.
3. Jeon, W.: ACS Applied Mater. Interfac. 6 (2014) 21632.
4. Jeon, W.: J. Mater. Chem. C 2 (2014) 9993.
5. Seok, J.: Phys. Chem. Chem. Phys. 17 (2015) 3004.
6. Luo, W.-B.: Chemical Comm. 51 (2015) 8269.
7. Liu, C.: Adv. Mater. Interfac. 3 (2016) 1500503.
8. Chaker, A.: J. Applied Phys. 120 (2016) 085315.
9. Kim, H.: J. Nanosci Nanotechnol. 17 (2017) 2906.
10. Nabatame, T.: ECS Trans. 80 (2017) 365.
11. Sawada, T.: J. Vacuum Sci Technol. A 35 (2017) 061503.
12. Niemela, Janne-P.: Semicond. Sci Technol. 32 (2017) 093005.
13. Nong, S.: J. American Chem. Soc 140 (22018) 5719.
14. Li, M.: Applied Surface Sci 439 (2018) 612.
15. Li, X.: Applied Surface Sci 470 (2019) 306.
16. Bi, L.: J. Alloys Comp. 845 (2020) 156271.
17. Tsuji, R.: ACS Omega 5 (2020) 6090.
18. Zhang, J.: Catal. Sci Technol. 10 (2020) 1518.
19. Park, H.: Chemosphere 265 (2021) 129166.
20. Jung, E.Y.: Nanotechnol. 32 (2021) 045201.
21. dos Reis, M.N.G.: J. Electroanalyt. Chem. 895 (2021) 115461.
22. Thakur, A.V.: Applied Phys. A 127 (2021) 910.
23. Gonzaga, I.M.D.: Electrochim. Acta 426 (2022) 140782.
24. Li, L.: ACS Applied Mater. Interfac. 14 (2022) 50783.
25. Doria, A.R.: Separat. Purificat. Technol. 319 (2023) 124053.
26. Modak, A.: J. Phys. Chem. Lett. 14 (2023) 10832.
27. Jiang, Y.: J. Mater. Chem. C 11 (2023) 11027.
28. Dória, A.R.: Applied Catal. B 339 (2023) 123092.
29. Li, Y.B.: IEEE Inter. Memory Workshop 2024.
30. Jeon, J.: Chem. Mater. 36 (2024) 3326.
31. Eun, S.M.: Korean J. Mater. Res. 34 (2024) 283.
Kováč, P., Hušek, I., Kopera, Ľ., Melišek, T., Rosová, A., and Dobročka, E.: Properties of in situ made MgB2 in Nb or Ti sheath, Supercond. Sci Technol. 26 (2013) 025007.
1. Li, G.Z.: Supercond. Sci Technol. 26 (2013) 095007.
2. Li, G.: IEEE Trans. Applied Supercond. 24 (2014) 6200105.
3. Sandu, V .: Supercond. Sci Technol. 29 (2016) 065012.
4. Burdusel, M.: Univ. Politeh. Bucharest Sci Bull. Ser. C 79 (2017) 155.
5. Abdyukhanov, I.: IEEE Trans. Applied Supercond. 28 (2018) 6200504.
6. Aldica, G.: J. Supercond. Novel Magnetism 31 (2018) 3423.
7. Ahmad, I.: Physica B 603 (2021) 412675.
8. He, Y.X.: IEEE Trans. Applied Supercond. 32 (2022) 6200105.
9. Wang, Z.K.: Supercond. Sci Technol. 37 (2024) 085017.
Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., and Bauer, A.: TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.
# 1. Schroeder, U.: In Thin Films on Silicon: Electronic and Photonic Appl. 8 (2016) 369.
# 2. Pešić, M.: J. Applied Phys. 119 (2016) 064101.
3. Austin, D.Z.: Chem. Mater.29 (2017) 1107.
4. Niemela, Janne-P.: Semicond. Sci Technol. 32 (2017) 093005.
5. Kozodaev, M.G.: J. Chem. Phys. 151 (2019) 204701.
6. Khalili, S.: Applied Phys. A 125 (2019) 661.
7. Maier, F.J.: J. Phys. Conf. Ser. 1837 (2021) 012009.
8. Hayes, M.: J. Vacuum Sci Technol. A 39 (2020) 052402.
9. Schneider, J.R.: Small 18 (2022) 2105513.
10. Lee, J.H.: Vacuum 220 (2024) 112776.
Rosová, A., Kováč, P., Hušek, I., and Kopera, L.: EDX and ion beam treatment studies of filamentary in situ MgB2 wires with Ti barrier, J. Alloys Compounds 509 (2011) 7961-7967.
1. Shahbazi, M.: IEEE Trans. Applied Supercond. 31 (2021) 6200305.
Hudec, B., Hušeková, K., Tarre, A., Han, J., Han, S., Rosová, A., Lee, W., Kasikov, A., Song, S., Aarik, J., Hwang, C., and Fröhlich, K.: Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes. Microelectr. Engn. 88 (2011) 1514-1516.
1. Kaczer, B.: J. Vacuum Sci Technol. B 31 (2013) 01A105.
2. Bayati, M.: J. Mater. Res. 28 (2013) SI1669.
3. Avril, L.: Applied Surface Sci 288 (2014) 201.
4. Wang, W.: Sci Reports 4 (2014) 4452.
5. Park, J.-Y.: J. Alloys Comp. 610 (2014) 529.
6. Padmanabhan, R.: Environmen. Sci Engn. (2014) 37.
7. Shkondin, E.: J. Vacuum Sci Technol. A 34 (2016) 031605.
8. Niemela, J.-P.: Semicond. Sci Technol. 32 (2017) 093005.
* 9. Chaker, A.: PhD thesis. Univ. Grenoble 2018.
* 10. Amiaud A.-Ch.: PhD thesis. Univ. Sorbonne 2018.
11. Yildirim, M.: J. Alloys Comp. 773 (2019) 890.
12. Jenkins, M.: ECS J. Solid State Sci Technol. 8(2019) N159.
13. Dollt, M.: Front. in Neurosci 14 (2020) 552876.
14. Qaid, M.M.: Mater. Chem. Phys. 259 (2021) 124054.
15. Lei, J.: J. Alloys Comp. 870 (2021) 159391.
16. Schneider, J.R.: Small 18 (2022) 2105513.
17. Maier, F.J.: J. Applied Phys. 131 (2022) 095301.
18. Xiong, L.: Molecules 27 (2022) 3951.
19. Lee, A.J.: Applied Surface Sci 590 (2022) 153082.
20. Mao, J.: J. Power Sources 619 (2024) 235196.
21. Amrani, R.: Physica Scripta 99 (2024) 065914.
22. Ambartsumov, M.G.: Applied Surface Sci 672 (2024) 160822.
Kováč, P., Hušek, I., Rosová, A., Melišek, T., and Kopera, Ľ.: Fine-filamentary in situ MgB2 wires, Supercond. Sci Technol. 23 (2010) 105006.
1. Hossain, M.S.A.: Supercond. Sci Technol. 24 (2011) 075013.
2. Wang Q.: Rare Metal Mater. Engn. 42 (2013) 881.
# 3. Yan, G.: Materials China 32 (2013) 550.
* 4. Schlachter, S.: In MgB2 superconducting wires. Ed. R. Flückiger. New Jersey: World Sci Publ. 2016. ISBN 978-981-4725-58-3. P. 549.
5. Yagai, T.: Cryogenics 96 (2018) 75.
6. Shahbazi, M.: IEEE Trans. Applied Supercond. 31 (2021) 6200305.
7. He, Y.X.: IEEE Trans. Applied Supercond. 32 (2022) 6200105.
Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.
1. Over, H.: Chemical Rev. 112 (2012) 3356.
2. Miikkulainen, V.: J. Applied Phys. 113 (2013) 021301.
3. Hamalainen, J.: Chem. Mater. 26 (2014) SI786.
4. Park, J.-Y.: J. Alloys Comp. 610 (2014) 529.
5. Gregorczyk, K.E.: ACS NANO 9 (2015) 464.
6. Sawada, T.: J. Vacuum Sci Technol. A 35 (2017) 061503.
7. Nabatame, T.: ECS Trans. 80 (2017) 365.
8. Lin, C.: J. Electrochem. Soc 166 (2019) D476.
9. Lee, J.H.: Thin Solid Films 701 (2020) 137950.
# 10. Winter, C.H.: Comprehensive Coordination Chem. III, ISBN 978-008102688-5. Elsevier 2021, p. 824.
11. Poonkottil, N.: Chem. Mater. 34 (2022) 8946.
12. Wang, Y.J.: Applied Surface Sci 657 (2024) 159728.
Fröhlich, K., Aarik, J., Ťapajna, M., Rosová, A., Aidla, A., Dobročka, E., and Hušeková, K.: Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes, J. Vacuum Sci Technol. B 27 (2009) 266-270.
1. Kim, S.K.: Adv. Functional Mater. 20 (2010) 2989.
2. Lee, S.W.: Chem. Mater. 23 (2011) 976.
3. Kim, S.K.: ACS Applied Mater. Interf. 4 (2012) 4726.
4. Kim, S.K.: J. Mater. Res. 28 (2013) 313.
5. Miikkulainen, V.: J. Applied Phys. 113 (2013) 021301.
6. Kaczer, B.: J. Vacuum Sci Technol. B 31 (2013) 01A105.
7. Wei, D.: ECS J. Solid State Sci Technol. 2 (2013) N110.
8. Clima, S.: IEEE Electron Device Lett. 34 (2013) 6425405.
# 9. Jithin, M.A.: Mater. Research Soc Symp. Proc. 1561 (2013) 13.
10. Popovici, M.: Applied Phys. Lett. 104 (2014) 082908.
11. Wang, C.: ACS Nano 8 (2014) 2658.
12. Jeon, W.: J. Mater. Chemistry C 2 (2014) 9993.
13. Jeon, W.: ACS Applied Mater. Interfac. 6 (2014) 21632.
14. Pessoa, R.S.: 29th Symp. Microelectr. Technol. Dev. 2014.
15. Xie, Y.: J. Alloys Compounds 683 (2016) 439.
16. Kassmi, M.: J. Applied Phys. 119 (2016) 244101.
17. Chaker, A.: J. Applied Phys. 120 (2016) 085315.
18. Agashe, K.: Nuclear Instrum. Methods in Phys. Res. B 403 (2017) 38.
19. Cho, C.J.: J. Mater. Chem. C 5 (2017) 9405.
20. Niemela, J.-P.: Semicond. Sci Technol. 32 (2017) 093005.
21. Kim, S.K.: MRS Bull. 43 (2018) 334.
22. Lee, W.: J. Mater. Chem. C 6 (2018) 13250.
23. Pessoa, R.S.: IEEE 33rd Symp. Microelectron. Technol. Devices 2017 (SBMICRO) 2018.
* 24. Chaker, A.: PhD thesis. Univ. Grenoble 2018.
25. Khan, M.S.: SMALL 16 (2020) 2003485.
26. Kim, H.: Nanoscale Res. Lett. 17 (2022) 28.
27. Maier, FJ.: J. Applied Phys. 131 (2022) 095301.
28. Kim, Y.W.: J. Mater. Chem. C 10 (2022) 12957.
29. Jeon, J.: Chem. Mater. 36 (2024) 3326.
30. Eun, S.M.: Korean J. Mater. Res. 34 (2024) 283.
31. Lee, S.: ACS Applied Mater. Interfaces 16 (2024) 34419.
Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., and Aidla, A.: Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes, Electrochem. Solid-State Lett. 11 (2008) G19-G21.
1. Niinisto, J.: Advanced Engn. Mater. 11 (2009) 223.
2. Han, J.H.: ECS Trans. 19 (2009) 717.
3. Kim, K.M.: Electrochem. Solid State Lett. 13 (2010) G1.
4. Wang, H.T.: Electrocem. Solid-State Lett. 13 (2010) G75.
5. Lee, W.J.: J. Phys. Chem. C 114 (2010) 6917.
6. Han, J.H.: Chem. Mater. 22 (2010) 5700.
7. Popovici, M.: Phys. Status Solidi-Rapid Res. Lett. 5 (2011) 19.
8. Han, J.H.: Applied Phys. Lett. 99 (2011) 022901.
9. Leskela, M.: MRS Bull. 36 (2011) 877.
10. Kim, S.K.: Phys. Status Solidi-Rapid Res. Lett. 5 (2011) 262.
11. Popovici, M.: Microelectr. Engn. 88 (2011) 1517.
# 12. Kim, M.-S.: IMW 2011. IEEE 2011, art. no. 5873203. ISBN 978-145770-2259.
13. Over, H.: Chem. Rev. 112 (2012) 3356.
14. Han, J. H.: Chem. Mater. 24 (2012) 1407.
15. Kim, S.K.: ACS Applied Mater. Interf. 4 (2012) 4726.
16. Miikkulainen, V.: J. Applied Phys. 113 (2013) 021301.
17. Zhu, L.: Solar Energy Mater. Solar Cells 111 (2013) 141.
18. Wang, X.: Crystal Growth & Design 13 (2013) 1316.
19. Popovici, M.: ECS J. Solid State Sci Technol. 2 (2013) N23.
20. Ko, C.-T.: J. Phys. Chem. C 117 (2013) 26204.
21. Van Den Berg, J.A.: Applied Surface Sci 281 (2013) 8.
22. Pu, H.: ECS Solid State Lett. 2 (2013) N35.
# 23. Hwang, C.S.: In Atomic Layer Deposition for Semiconductors. Springer 2013. ISBN: 978-1-4614-8053-22013. P. 73.
24. Yang, Z.: IEEE Electron Device Lett. 35 (2014) 557.
25. Park, J.-Y.: J. Alloys Comp.610 (2014) 529.
26. Hernandez-Torres, E.M.: Chem. Pap. 68 (2014) 1257.
27. Ko, C.-T.: ACS Applied Mater. Interfac. 6 (2014) 4179.
28. Jeon, W.: ACS Applied Mater. Interf. 6 (2014) 21632.
29. Peng, J.: J. Sol-Gel Sci Technol. 71 (2014) 458.
30. Hahn, H.: J. Applied Phys. 117 (2015) 214503.
31. Cho, K.: J. Semicond. Technol. Sci 16 (2016) 346.
32. Mondal, J.: Corrosion Sci 105 (2016) 161.
33. Head, A.R.: J. Phys. Chem. C 120 (2016) 243.
34. Wang, M.: RSC Adv. 6 (2016) 4867.
35. Saric, I.: Thin Solid Films 628 (2017) 142.
36. Nabatame, T.: ECS Trans. 80 (2017) 365.
37. Niemela, J.-P.: Semicond. Sci Technol. 32 (2017) 093005.
38. Sawada, T.: J. Vacuum Sci Technol. A 35 (2017) 061503.
39. Moehl, T.: ACS Applied Mater. Interf. 9 (2017) 43614.
40. Ben Elbahri, M.: J. Phys. D 51 (2018) 065101.
41. Wang, W.: Mater. Chem. Phys. 211 (2018) 172.
42. Song. H.: J. Wuhan Univ. Technol.-Mater. Sci Ed. 33 (2018) 1070.
43. Lau, W.S.: China Semicond. Technol. Inter. Conf. 2018 – CSTIC 2018, pp. 1-3.
* 44. Chaker, A.: PhD thesis. Univ. Grenoble 2018.
45. Kim, A.: ACS Applied Nano Mater. 2 (2019) 3220.
46. Choi, W.-H.: J. Vacuum Sci Technol. A 37 (2019) 020924.
47. Son, K.-H.: Coatings 10 (2020) 752.
48. Gants, O.Y.: Izv. Vyss. Ucheb. Zav. Khimiya Khim. Tekhnol. 63 (2020) 26.
49. Kim, B.: Nanotechnol. 33 (2022) 045705.
50. Kim, B.: Nanotechnol. 33 (2022) 115701.
51. Kim, B.: Vacuum 199 (2022) 110957.
52. Jeong, J.: J. Alloys Compounds 927 (2022) 166961.
53. Doan, H.T.: Surface Engn. Applied Electrochem. 59 (2023) 682.
54. Lee, J.H.: Vacuum 220 (2024) 112776.
55. Jeon, J.: Chem. Mater. 36 (2024) 3326.
56. Eun, S.M.: Korean J. Mater. Res. 34 (2024) 283.
57. Lee, S.: ACS Applied Mater. Interfaces 16 (2024) 34419.
Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.
1. Choi, C.: Applied Phys. Lett. 98 (2011) 083506.
2. Choi, C.: Applied Phys. Lett. 98 (2011) 123506.
3. Benkovska, J.: Phys. Status Solidi A 209 (2012) 1384.
4. Kaczmarski, J.: J. Display Technol. 11 (2015) 528.
5. Popovici, M.: Chem. Mater. 29 (2017) 4654.
# 6. Jung, W.: New Phys.: Sae Mulli 67 (2017) 696.
7. Chen, L.: Chinese J. Anal. Chem. 50 (2022) 100143.
8. Chernikova, A.G.: Applied Phys. Lett. 122 (2023) 021601.
Ťapajna, M., Rosová, A., Hušeková, K., Roozeboom, F., Dobročka, E., Fröhlich, K., : Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode. Microelectr. Engn. 84 (2007) 2366-2369.
1. Das, N.C.: J. Applied Phys. 110 (2011) 063527.
2. Zhang, H.Y.: Applied Surface Sci 311 (2014) 117.
3. Dementeva, E.V.: ACS Applied Nano Mater. 6 (2023) 16212.
Fröhlich, K., Lupták, R., Dobročka, E., Hušeková, K., Čičo, K., Rosová, A., Lukosius, M., Abrutis, A., Písečný, P., and Espinos, J.: Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition, Materials Sci Semicond Process. 9 (2006) 1065-1072.
1. Kukli, K.: Chemical Vapour Depos. 13 (2007) 546.
2. Dabrowski, J.: J. Electrochem. Soc. 155 (2008) G97
3. Losurdo, M.: J. Electrochem. Soc. 155 (2008) G44.
4. Milanov, A.P.: Chem. Mater. 21 (2009) 5443.
5. Milanov, A.P.: ECS Trans. 25 (2009) 143.
6. Ferreira, A.C.: J.Alloys Compounds 489 (2010) 316.
7. Geppert, I.: J. Applied Phys. 108 (2010) 024105.
8. Geppert, I.: ESC Trans. 28 (2010) 191.
9. Daly, S. R.: Inorganic Chem. 51 (2012) 7050.
10. Huang, L.-Y.: Microelectr. Engn. 94 (2012) 38.
11. Ahren, M.: J. Nanopart. Res. 14(2012) 1006.
# 12. Barquinha, P.: In Transparent Oxide Electronics: From Materials to Devices. Chichester: John Wiley 2012 ISBN 978-0-470-68373-6.
13. Fan, X.: Mater. Res. Express 1 (2014) 045005.
14. Zhuang, J.: ACS Applied Mater. & Interfaces 8 (2016) 31128.
15. Watkinson, E. J.: J. Nuclear Mater. 486 (2017) 308.
16. Goh, K.H.: Mater. Sci Semicond. Process. 68 (2017) 302.
17. Hetherin, K.: J. Mater. Sci-Mater. Electron. 28 (2017) 11994.
18. Hetherin, K.: Applied Phys. A 123 (2017) 510.
19. Morkoc, B.: J. Mater. Sci-Mater. Electron. 32 (2021) 9231.
20. Al-Esaifer, H.R.S.: Radiation Effects Defects in Solids 177 (2022) 783.
21. Ahmad, J.: J. Trace Elements in Medicine Biol. 73 (2022) 127029.
22. Morkoc, B.: Mater. Chem. Phys. 292 (2022) 126875.
23. Sawka, A.: Ceram. Inter. 49 (2023) 23835.
Franta, M., Rosová, A., Ťapajna, M., Dobročka, E., Fröhlich, K., : Microstructure of HfO2 and HfxSi1-xOy dielectric films prepared on Si for advanced CMOS application. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 47-50.
1. Chang, Y.-H.: Microelectr. Engn. 96 (2012) 61.
2. Correa-Mena, A. G.: ICCDCS 2017. P. 77.
Rossel, C., Rosová, A., Hušeková, K., Machajdík, D., Fröhlich, K., : Phase stability of La0.5Sr0.5CoO3−y films upon annealing in hydrogen atmosphere. J. Applied Phys. 100 (2006) 044501.
1. Li, G.: Applied Phys. Lett. 91 (2007) art. no. 163114.
2. Li, G.: J. Phys. D 42 (2009) 065006.
3. Li, Y.W.: Applied Phys. A 95 (2009) 721.
4. Hu, Z.G.: Applied Phys. Lett. 94 (2009) 221104.
5. Li, W.W.: Acs Applied Mater. Interfaces 2 (2010) 896.
6. Li, J.: Nanoscale 9 (2017) 13214.
Lupták, R., Fröhlich, K., Rosová, A., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., and Mansilla, C.: Growth of gadolinium oxide films for advanced MOS structure. Microelectr. Engn. 80 (2005) 154-157.
1. Kukli, K.: Chemical Vapour Depos. 13 (2007) 546.
2. Barreca1, D.: Surf. Sci. Spectra 14 (2007) 60.
3. Milanov, A.P.: ECS Trans. 25 (2009) 143.
4. Kao, C.H.: J. Electrochem. Soc 157 (2010) H915.
5. Laha, A.: Applied Phys. Lett. 99 (2011) 152902.
6. Yang, S.: Mater. Res. Bull. 48 (2013) 37.
7. Tien, C.-Y.: J. Electr. Engn. Technol. 10 (2015) 1720.
8. Mishra, M.: Surface Coat. Technol. 262 (2015) 56.
9. Goh, K.H.:Mater. Sci Semicond. Process. 68 (2017) 302.
10. Pattabi, M.: AIP Conf. Proc. 1832 (2017) 080020.
11. Stadler, D.: J. Nanostr.Chem. 8 (2018) 33.
12. Prasad, C.V.: Applied Surface Sci 427 (2018) 670.
13. Kahraman, A.: J. Mater. Sci-Mater. Electr. 29 (2018) 17473.
14. Accardo, G.: Inter. J. Hydrogen Energy 44 (2019) 12138.
15. Thilipan, G.A.K.: AIP Conf. Proc. 2265 (2020) 030334.
16. Thilipan, G.A.K.:Mater. Sci Semicond. Process. 121 (2021) 105408.
17. Rawat, A.: Thin Solid Films 742 (2022) 139047.
18. Devaray, P.: J. Mater. Sci-Mater. Electr. 33 (2022) 7313.
19. Sawka, A.: Ceram. Inter. 49 (2023) 23835.
Machajdík, D., Pevala, A., Rosová, A., Fröhlich, K., Šouc, J., Weiss, F., Figueras, A., : On the problem of overlopping ? scans measured on thin films deposited on monocrystal substrates J. Applied Crystall. 32 (1999) 736-743.
1. Boulle, A.: Thin Solid Films 434 (2003) 1.
Rosová, A., : Real domain structure originating in (110) mechanic twinning in YBa2Cu3O7-y. In: Studies High Temp. Supercond. Vol. 28. Ed. A. Narlikar. New York: Nova Sci Publ. 1999. P. 125-148.
1. Shlyk, L.: Applied Phys. Lett. 88 (2006) 062509.
2. Shlyk, L.: Supercond. Sci Technol. 19 (2006) S472.
Kováč, P., Hušek, I., Rosová, A., Pachla, W., : Thermomechanical treatment, structure and transport currents in multicore Bi(2223)/Ag tapes Physica C 312 (1999) 179-190.
1. Fabbricattore, P.: Supercond. Sci Technol. 13 (2000) 1327.
2. Tjia, M. O.: Advances in Supercond. XII. Ed. T. Yamashita. Tokyo: Springer-Verlag Tokyo 2000. P. 679.
3. Kasztler, A.: Inst. Phys. Conf. Ser. No 167 (2000) 519.
4. Fabbricatore, P.: Physical Rev. B 61 (2000) 6413
5. Tjia MO.: Adv. Supercond. XII (2000) 679.
6. Sneary, A.B.: Supercond. Sci Technol. 14 (2001) 433.
7. Farinon, S.: IEEE Trans. on Applied Supercond. 11 (2001) 2776-2779.
* 8. Stavrev, S.: PhD Thesis. Lausanne: EPFL 2002.
9. Yakinci, Z.D.: Physica C 408-410 (2004) 900.
10. Seiler, E.: Supercond. Sci Technol. 17 (2004) 549.
11. Grivel, J.C.: Supercond. Sci Technol. 18 (2005) 583.
* 12. Seiler, E.: PhD Thesis. Bratislava: ElÚ SAV 2005.
13. Gomory F.: Supercond. Sci. Technol. 20 (2007) S271.
14. Li, M.Y.: Rare Metal Mater. Engn. 37 (2008) 288.
15. Farinon, S.: Supercond. Sci Technol. 23 (2010) 115004.
Fröhlich, K., Machajdík, D., Vávra, I., Šouc, J., Rosová, A., Figueras, A., Weiss, F., Dahmen, K., : Growth of YBa2Cu3O7/CeO2/Al2O3 heteroepitaxial films by aerosol MOCVD J. Alloys Compounds 251 (1997) 284.
1. Becht, M.: Applied Supercond. 4 (1997) 475.
2. Zhao, P.: Surface Coatings Technol. 204 (2010) 3619.
3. Zhao, P.: J. American Ceramic Soc 99 (2016) 3104.
Fröhlich, K., Šouc, J., Rosová, A., Machajdík, D., Graboy, I., Svetchnikov, V., Figueras, A., and Weiss, F.: Superconducting YBa2Cu3O7 films prepared by aerosol metal organic chemical vapour deposition on Al2O3 substrate with CeO2 buffer layer, Supercond. Sci Technol. 10 (1997) 657.
1. Selbmann, D.: J. de Physique IV 10 (2000) 27.
2. Jung, K.R.: IEEE Trans. Applied Supercond. 13 (2003) 291.
* 3. Van Driessche, I.: IoP Conf. Ser. No 181 (2004) 1462.
4. Kaul, A.R.: Uspekhi Khimii 73 (2004) 932.
# 5. Xiong, J.: J. Chinese Ceramic Soc. 33 (2005) 149.
# 6. Xiong, J.: J. Chinese Ceramic Soc. 33 (2005) 159.
7. Wei, M.: J. Crystal Growth 284 (2005) 464.
8. Wei, M.: Materials Lett. 60 (2006) 1519.
9. Petrova, N.L.: Solid State Ionics 177 (2006) 613.
10. Tang, M.H.: Trans. Nonferrous Metals Soc. China 17 (2007) S741.
* 11. Hung, V.V.: Mater. Sci Appl. 9 (2018) 949.
12. Lo Presti, F.: Adv. Mater. Interfaces 9 (2022) 2102501.
Španková, M., Gaži, Š., Chromik, Š., Rosová, A., Vávra, I., Beňačka, Š., : The problems of native SiO2 removing for epitaxial growth of YSZ film on Si J. Low Phys. 106 (1997) 439.
1. Hartmanová, M.: Thin Solid Films 345 (1999) 330.
2. Hartmanová, M.: Solid State Ionics 130 (2000) 105.
3. Ishigaki, H.: J. Ceramic Soc Japan 109 (2001) 766.
4. Ishigaki, H.: J. Ceramic Soc Japan 110 (2002) 333.
Didier, N., Dubourdieu, C., Rosová, A., Chenevier, B., Senateur, J., Thomas, O., : Twinning behaviour in YBCO and PBCO thin films and in (PBCO/YBCO) superlattices, J. Alloys Compounds 251 (1997) 322-327. (Not IEE SAS).
1. Komissinski, P.V.: Europhys. Lett. 57 (2002) 585.
2. Komissinski, P.V.: Physica C 368 (2002) 271.
# 3. Berenov, A.: J. Mater. Research 18 (2003) 956.
4. Komissinski, F.V.: Low Temperature Phys. 30 (2004) 599.
5. Caldwell, W.A.: Phys. Rev. Lett. 92 (2004) 216105.
6. Kawashima, K.: J. Supercond. Novel Magnet. 28 (2015) 1993.
Fröhlich, K., Machajdík, D., Rosová, A., Vávra, I., Weiss, F., Bochu, B., Senateur, J., : Growth of SrTiO3 thin epitaxial films by aerosol MOCVD Thin Solid Films 260 (1995) 187-191.
1. Pena, J.: Solid State Ionics 101 (1997) 183.
2. Kruis, F.E.: J. Aerosol Sci 29 (1998) 511.
3. Wang, X.: J. Vacuum Sci Technol. A 17 (1999) 564.
4. Gibbons, B.J.: Materials Research Soc Symp. Proc. 603 (2000) 57.
5. Gibbons, B.J.: J. Vacuum Sci Technol. A 19 (2001) 56.
6. He, J.Q.: J. Applied Phys. 92 (2002) 7200.
7. Borra, J.P.: J. Phys. D 39 (2006) R19.
8. Hou, X.H.: Chemical Vapor Deposition 12 (2006) 583.
9. Weiss, C.V.: J. Applied Phys. 111 (2012) 054108.
10. Parkhomenko, R.: J. Coord. Chem. 65 (2012) 3227.
11. Sun, F.: J. Mater. Sci 49 (2014) 5978.
12. Chen, J.: Ceramics Inter. 42 (2016) 9981.
13. Chen, J.: Mater. Today-Proc. 4 (2017) 11461.
14. Lo Presti, F.: Adv. Mater. Interfaces 9 (2022) 2102501.
15. Dandre, A.: J. Supercritic. Fluids 213 (2024) 106353.
Rosová, A., Chromik, Š., Beňačka, Š., Wuyts, B., : Study of superconducting a-axis oriented YBa2Cu3O7- thin films deposited on Y2O3/YSZ/Si with PrBa2Cu3O7- seed layer Physica C 253 (1995) 39.
1. Hashimoto, T.: Adv. Supercond. XII. Tokyo: Springer-Verlag Tokyo 2000. P. 909.
Dèchamps, M., Favre-Nicolin, E., Rosová, A., : Twins and domain structure of YBaCuO Key Engn. Materials 101-102 (1995) 217.
1. Bezák, V.: J. Mathem. Phys. 37 (1996) 5939.
2. Sacuto, A.: Supercond. Sci Technol. 9 (1996) 483.
3. Hinkov, V.: European Phys. J.-Special Top. 188 (2010) 113.
Chromik, Š., Wuyts, B., Vávra, I., Rosová, A., Hanic, F., Beňačka, Š., and Bruynseraede, Y.: Epitaxial YBa2Cu3O7 superconducting films, without twin planes on Y2O3/YSZ/Si, Physica C 226 (1994) 153.
1. Hartmanová, M.: Thin Solid Films 345 (1999) 330.
2. Hartmanová, M.: Solid State Ionics 119 (1999) 85.
3. Hartmanová, M.: Solid State Ionics 130 (2000) 105.
4. Kundracik, F.: Materials Sci Engn. B 84 (2001) 167.
5. Kundracik, F.: Ionics 7 (2001) 224.
6. Gmucova, K.: Ceramics Inter. 32 (2006) 105.
Rosová, A., Vávra, I., Boulesteix, C., Darriet, B., Chaminade, J., : Domain structure of YBaCuO „single crystals“ Ferroelastics 141 (1993) 73.
1. Wurster, K.: Physica C 235 (1994) 2701.
2. Schranz, W.: Diffusionless Phase Transit. 101-102 (1995) 41.
3. Machajdík, D.: European Powder Diffraction 228 (1996) 901-906.
4. Bezák, V.: J. Math. Phys. 37 (1996) 5939-5937.
Rosová, A., Boulesteix, C., Vávra, I., : Role of microtwins in twin lamella intersections and interconnections in YBa2Cu3O7-y Physica C 214 (1993) 247.
1. Chrosch, J.: Physica C 225 (1994) 111.
2. Wurster, K.: Physica C 235 (1994) 2701.
3. Wosik, J.: IEEE Trans. Applied Supercond. 5 (1995) 2392.
4. Wosik, J.: Phys. Rev. B 51 (1995) 16289.
# 5. Mironova, M.: Phil. Magazine A 71 (1995) 855.
6. Bezak, V.: J. Math. Phys. 37 (1996) 5939-5957.
7. Salje, E.K.H.: J. Phys. Condes. Matt. 8 (1996) 8477-8495.
8. Salje, E.K.H.: Ferroelectr. 183 (1996) 85.
9. . Machajdík, D.: Mat. Sci. Forum 228 (1996) 901-906.
10. Salje, E.K.H.: Phase Transit. 55 (1996) 37.
11. Feder, D.L.: Phys. Rev. B 56 (1997) R5751.
12. Novak, J.: European Physical Journal B 4 (1998) 279
13. Liang, R.X.: Physica C 336 (2000) 57.
14. Muralidhar, M.: Phys. Rev. Lett. 89 (2002) 237001.
15. Paturi, P.: Supercond. Sci Techn. 17 (2004) 564.
16. Paturi, P.: Physica C 433 (2005) 123.
17. Palonen, H.: Thin Solid Films 519 (2011) 8058.
# 18. Muralidhar, M.: Recent Patents Mater. Sci 5 (2012) 4.
19. Jian, H.: Physica C 488 (2013) 39.
Rosová, A., Krekels, T., van Tendeloo, G., Darriet, B., Chambon, M., : Twin boundary structure of Au-doped YBa2Cu3O7-x single crystals Ferroelectrics 141 (1993) 87.
1. Mannstaedt, S.: Phys. Rev. B 62 (2000) 4169.