Elektrotechnický ústav SAV, v.v.i.

Vidiš, M., Patrnčiak, M., Moško, M., Plecenik, A., Satrapinsky, L., Roch, T., Ďurina, P., and Plecenik, T.: Gas-triggered resistive switching and chemiresistive gas sensor with intrinsic memristive memory, Sensors Actuators B 389 (2023) 133878. (Not IEE SAS)

1. Lin, T.H.: Polymers 15 (2023) 4318.
2. Qiu, P.L.: Chem. Engn. J. 477 (2023) 146978.

Kundrata, I., Mošková, A., Moško, M., Mičušík, M., Dobročka, E., and Fröhlich, K.: Atomic layer deposition of lithium metaphosphate from H₃PO₄ and P₄O₁₀ facilitated via direct liquid injection: Experiment and theory, J. Vacuum Sci Technol. A 39 (2021) 062407.

1. Weber, M.: ACS Mater. AU 3 (2023) 274.
2. Jeon, Y.J.: J. Electrochem. Sci Technol. 15 (2024) 365.

Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M., Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

1. Zhao, K.: Nanomater. 12 (2022) 172.
2. Goikhman, B.V.: J. Mater. Chem. A 10 (2022) 8413.
3. Singh, R.: J. Mater Sci-Mater. Electron. 33 (2022) 6969.
4. Fedorov, F.S.: Applied Surface Sci 606 (2022) 154717.

Vidiš, M., Plecenik, T., Moško, M., Tomašec, S., Roch, T., Satrapinsky, L., Grančič, B., and Plecenik, A.: Gasistor: A memristor based gas-triggered switch and gas sensor with memory, Applied Phys. Lett. 115 (2019) 093504. (Not IEE SAS)

1. Weng, T.-F.: Applied Surface Sci 533 (2020) 147476.
2. Saylan, S.: Sci Rep. 10 (2020) 19541.
3. Erokhin, V.: BioNanoSci 10 (2020) 834.
4. Illarionov, G.A.: Front. in Chem. 8 (2020) 724.
# 5. Gupta, V.: 33rd IEEE Inter. Symp. Defect Fault Tolerance in VLSI and Nanotechnol. Systems – DFT 2020, no. 9250843.
6. Revadekar, C.C.: Mater. Res. Express 8 (2021) 076304.
7. Chen, X.T.: IEEE Trans. Nanotechnol. 20 (2021) 512.
8. Khandelwal, S.: IEEE Inter. On-Line Testing Symp. 2021.
9. Gupta, V.: 34^th IEEE Inter. Symp. Defect Fault Tolerance In VLSI Nanotechnol. Systems (DFT 2021).
10. Prinzie, J.: Nature Electron. 4 (2021) 243.
11. Zhang, Z.: J. Electron. Inf. Technol. 43 (2021) 1498.
12. Illarionov, G.A.: Nanosystems-Phys. Chem. Mathemat. 12 (2021) 783.
13. Lee, D.: ACS Sensors 6 (2021) 4217.
14. Humood, K.: IEEE Trans. Instrument. Measurem. 71 (2022) 2001409.
15. Khandelwal, S.: J. Comput. Electron. 21 (2022) 1005.
16. Lee, D.: J. Korean Phys. Soc 80 (2022) 1065.
17. Zhang, Y.Q.: Acta Physica Sinica 71 (2022) 148502.
18. Leturcq, R.: Adv. Phys.-X 7 (2022) 2044904.
19. Qiu, P.L.: Sensors Actuators B 373 (2022) 132730.
20. Lee, D.W.: Sensors Actuators B 376 (2023) 132993.
21. Guo, L.: Applied Phys. Lett. 123 (2023) 013901.
22. Wang, L.: Phys. Chem. Chem. Phys. 25 (2023) 18132.
23. Kundale, S.S.: Nanomater. 13 (2023) 1879.
24. Lee, D.: ACS Sensors 8 (2023) 2105.
25. Homsi, R.: IEEE Access 11 (2023) 19347.
26. Abuhamra, N.: IEEE Sensors J. 23 (2023) 30093.
27. Qiu, P.L.: Chem. Engn. J. 477 (2023) 146978.
28. Naik, S.G.: Mater. Adv. 4 (2023) 6312.
29. Tereshkov, M.: Chemosensors 12 (2024) 42.
30. Laera, A.M.: Chemosensors 12 (2024) 78.
31. Meng, Y.F.: Nanoscale 16 (2024) 11928.

Dvoranová, M., Plecenik, T., Moško, M., Vidiš, M., Gregor, M., Roch, T., Grančič, B., Satrapinsky, L., Kúš, P., and Plecenik, A.: Point contact spectroscopy of superconductors via nanometer scale point contacts formed by resistive switching, AIP Adv. 8 (2018) 125217. (Not IEE SAS)

1. Zhitlukhina, E.: Proc. IEEE NAP 2021.
2. Qiu, P.L.: Sensors Actuators B 373 (2022) 132730.
3. Liu, M.L.: Chinese Phys. Lett. 40 (2023) 067301.
4. Qiu, P.L.: Sensors Actuators B 392 (2023) 134038.

Mošková, A. and Moško, M.: Note on the Coulomb blockade of a weak tunnel junction with Nyquist noise: Conductance formula for a broad temperature range. Phys. Status Solidi C 14 (2017) 1700029.

1. Foong, Y.W.: J. Phys. Chem. C 125 (2021) 4343.
2. Morel, T.: Phys. Rev. B 104 (2021) 245417.

Krško, O., Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Highly sensitive hydrogen semiconductor gas sensor operating at room temperature, Procedia Engn. 120 (2015) 618-622.

1. Dascalu, I.: J. Sol-Gel Sci Technol. 86 (2018) 151.
2. Eensalu, Jako S.: Proc. Estonian Acad. Sci 67 (2018) 124.
3. Chachuli, Siti Amaniah M.: Sensors 18 (2018) 2483.
4. Chachuli, S.A.M.: IEEE Sensors Nano 2019, no. 8940042.
# 5. Swain, S.K.: In Handbook of Ecomater. vol. 2. Springer 2019 ISBN 978-331968255-6, pp. 1247-1266.
6. Chachuli, S.A.M.: J. Alloys Comp. 882 (2021) 160671.
7. Heya, A.: J. Photopolymer Sci Technol. 37 (2024) 415.

Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO2-Pt sandwich, Sensors Actuators B 207 (2015) 351-361.

1. Madhi, I.: Ceramics Inter. 41 (2015) 6552.
2. Lv, P.: J. Mater. Chem. A 3 (2015) 16089.
# 3. Hara, K.: IEEJ Trans. Sensors Micromachines 135 (2015) 270.
4. Xia, X.: Sensors Actuators B 234 (2016) 192.
5. Wu, J.: Solid State Ionics 292 (2016) 32.
6. Gurbuz, M.: Surface Engn. 32 (2016) 725.
7. Peng, X.: Sensors 16 (2016) 1249.
8. He, X.: Materials & Design 106 (2016) 74.
9. Yasuoka, H.: J. Statistical Phys. 165 (2016) 907.
10. Wang, H.: Inter. Conf. Manipul. Manufact. Measurem. Nanoscale (2016) 199.
# 11. Zheng, X.: Optoelectron. Lett. 12 (2016) 308.
# 12. Papanicolaou, G.C.: Ciencia e Tecnologia dos Materiais 28 (2016) 138.
13. Zhang, D.: Sensors Actuators B 245 (2017) 560.
14. Shao, S.: RSC Adv. 7 (2017) 39859.
15. Panta, R.: Inter. J. Hydrogen Energy 42 (2017) 19106.
16. Duran, C.: Electronics 7 (2018) 54.
17. Suga, K.: Phys. Rev. E 97 (2018) 053109.
18. Burratti, L.: Mater. Chem. Phys. 212 (2018) 274.
19. Arachchige, Hashitha M. M. Munasinghe: Sensors Actuators B 269 (2018) 331.
20. Zimnyakov, D.A.: Nanomater. 8 (2018) 915.
21. Burratti, L.: Materials 11 (2018) 1547.
22. Adeyemo, A.: J. Comput. Electron. 17 (2018) 1285.
#     23. Wu, T.: Gongneng Cailiao/J. Functional Mater. 49 (2018) 01197+01208.
24. Hsu, K.-C.: J. Alloys Compounds 794 (2019) 576.
25. Niu, M.: Industr. Engn. Chem. Res. 58 (2019) 10364.
26. Abu Talip, M. A.: J. Mater. Sci-Mater. Electron. 30 (2019) 4953.
27. Lee, J.-H.: Sensors Actuators B 310 (2020) 127870.
28. Francioso, L.: ACS Applied Nano Mater. 3 (2020) 3337.
29. Papanicolaou, G.C.: Polymers 12 (2020) 22.
30. Arenas-Hernandez, A.: Europ. Phys. J.-Applied Phys.‏ 90 (2020) 30102.
31. Ivanco, J.: Ceramics Inter. 46 (2020) 15876.
32. Ramanavicius, S.: Sensors 20 (2020) 6833.
33. Wu, J.: ACS Photonics 7 (2020)‏ 2923.
34. Gupta, V.: 33rd IEEE Inter. Symp. on Defect Fault Toleran. in VLSI Nanotechnol. Systems – DFT 2020, 9250843.
35. Wang, X.: Trends in Food Sci Technol. 110 (2021) 483.
36. Rodrigues, M.S.: Applied Sci 11 (2021) 5388.
37. Simonetti, E.A.N.: Ceramics Inter. 47 (2021) 17844.
#     38. Gorup, L.F.: Nanosensors for Smart Manufact. (2021) 445.
39. Li, X.L.: Sensors Actuators B 350 (2022) 130869.
40. Gupta, V.: IEEE Inter. Symp. Defect Fault Tolerance in VLSI Systems 2021.
41. Ramanavicius, S.: Coatings 12 (2022) 699.
42. Leturcq, R.: Adv. Phys.-X 7 (2022) 2044904.
*     43. Nemec, P.: In: SSSI 2022. Bratislava: Comenius Univ. 2022, p. 35-37. ISBN 978-80-223-5494-3.
44. Shaik, R.: Coord. Chem. Rev. 471 (2022) 214752.
45. Baran, N.: CHEMOSENSORS 10 (2022) 349.
46. Qiu, P.L.: Sensors Actuators B 373 (2022) 132730.
#     47. Horsky, M.: ASDAM 2022.
48. Zhao, J.T.: Inorganics 11 (2023) 366.
49. Tereshkov, M.: Chemosensors 12 (2024) 42.
50. Zhang, M.H.: Inter. J. Hydrogen Energy 74 (2024) 307.
51. Khojier, K.: Applied Phys. A 130 (2024) 478.

Durina, P., Plecenik, T., Moško, M., Haidry, A., Truchly, M., Mikula, M., Grančič, B., Roch, T., Gregor, M., Satrapinsky, L., Kúš, P., and Plecenik, A.: Properties of metal oxide gas sensors with electrodes placed below and on top of the sensing layer, Key Engn. Mater. 605 (2014) 527-530.

1. Sirjani, S.: J. Sensors 2024 (2024) 6696108.

Plecenik, A., Haidry, A.A., Plecenik, T., Durina, P., Truchly, M., Moško, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., and Kúš, P.: Metal oxide gas sensors on the nanoscale, Proc. SPIE 9083 (2014) 9083OY.

1. Eom, N.S.A.: Sensors 17 (2017) 2750.
2. Shepa, I.: Ceramics Inter. 44 (2018) 17925.
3. Umar, A.: Sensors Actuators B 304 (2020) 127352.
4. Shepa, I.: Mater. Today Chem. 21 (2021) 100543.
5. Bronusiene, A.: Coatings 14 (2024) 88.

Feilhauer, J., Moško, M., : Coexistence of diffusive resistance and ballistic persistent current in disordered metallic rings with rough edges: possible origin of puzzling experimental values. Phys. Rev. B 88 (2013) 125424, also arXiv: 1203.6512v2 (2012).

1. Dietz, O.: Phys. Rev. B 86 (2012) 201106.
2. Doppler, J.: New J. Phys. 16 (2014) 053026.

Mošková, A., Moško, M., Tóbik, J., : Theoretical study of persistent current in a nanoring made of a band insulator. Phys. Status Solidi B 250 (2013) 147-159.

1. Shyu, F.L.: Solid State Comm. 188 (2014) 53.
2. Sankar, I.V.: Physica E 73 (2015) 175.
3. Ribeiro, A.V.: Phys. Status Solidi B 253 (2016) 545.
4. Lavanya, C.U.: Physica E‏ 126 (2021) 114500.
5. Tehrani, D.H.T.: Sci Rep 13 (2023) Iss. 1.

Feilhauer, J., Moško, M., : Conductance and persistent current in quasi-one-dimensional systems with grain boundaries: Effects of the strongly reflecting and columnar grains. Phys. Rev. B 84 (2011) 085454.

1. Tamura, R.: Phys. Rev. B 86 (2012) 205416.
2. Mil’nikov, G.: Phys. Rev. B 87 (2013) 035434.
3. Mil’nikov, G.: Phys. Rev. B 88 (2013) 155406.
4. Ying, L.: Phys. Rev. B 96 (2017) 165407.
5. Ding, Y.J.: Sci Rep. 13 (2023) Iss.1.

Feilhauer, J., Moško, M., : Quantum and Boltzmann transport in a quasi-one-dimensional wire with rough edges. Phys. Rev. B 83 (2011) 245328.

1. Tamura, R.: Phys. Rev. B 86 (2012) 205416.
2. Xiao, X.-B.: Chinese Phys. Lett. 29 (2012) 087202.
3. Xu, H.: J. Phys.-Cond. Matter 24 (2012) 455303.
4. Xiao, X. B.: Europ. Phys. J. B 85 (2012) 305.
5. Alcazar-Lopez, A.: Phys. Rev. E 87 (2013) 032904.
6. Mil’nikov, G.: Phys. Rev. B 87 (2013) 035434.
7. Mil’nikov, G.: Phys. Rev. B 88 (2013) 155406.
8. Doppler, J.: New J. Phys. 16 (2014) 053026.
9. Pena, A.: Nature Comm. 5 (2014) 3488.
10. Yepez, M.: AIP Conf. Proc. 1579 (2014) 31.
11. Yepez, M.: EPL 108 (2014) 17006.
12. Moors, K.: Microelectron. Engn.167 (2017) SI37.
13. Jafari, M.R.: J. Electronic Mater. 46 (2017) 573.
14. Marinyuk, V. V.: Phys. Rev. B 96 (2017) 155146.
15. Markos, P.: Phys. Rev. B 97 (2018) 085423.
16. Zheng, C.: Phys. Rev. B 103 (2021) 075401.
17. Bahrami, B.: Modern Phys. Lett. B 37 (2023) Iss. 27.

Moško, M., Németh, R., Krčmár, R., Indlekofer, K., : Luttinger liquid and persistent current in a continuous mesoscopic ring with a weak link. Phys. Rev. B 79 (2009) 245323.

1. Shakouri, Kh.: J. Phys.-Cond. Matter 23 (2011) 225801.
2. Dajka, J.: J. Phys.-Cond. Matt. 24 (2012) 495701.

Németh, R., Moško, M., : One-dimensional ring with Kronig–Penney periodic potential: Persistent currents at full filling. Physica E 40 (2008) 1498.

1. Xiao, S.: Europ. Phys. J. B 86 (2013) 77.
2. Papp, E.: AIP Conf. Proc. 1796 (2017) UNSP 030003.

Feilhauer, J., Moško, M., : Persistent current in a disordered mesoscopic ring with many channels: Scattering-matrix based calculation. Physica E 40 (2008) 1582.

1. Gasparian, V.: J. Phys.-Cond. Matter. 21 (2009) 405302.
2. Shakouri, Kh.: J. Phys.-Condensed Matt. 23 (2011) 225801.
3. Luo, Z.-H.: Acta Phys. Sinica 60 (2011) 037303.
4. Luo, Z.-H.: Acta Phys. Sinica 61 (2012) 057303.

Krčmár, R., Gendiar, A., Moško, M., Németh, R., Vagner, P., Mitas, L., : Persistent current of correlated electrons in mesoscopic ring with impurity. Physica E 40 (2008) 1507-1509.

1. Reboredo, F.A.: J. Chem. Phys. 136 (2012) 204101.

Moško, M., Vagner, P., Gendiar, A., Németh, R., : Coherent transport of interacting electrons through a single scatterer. Physica B 378-380 (2006) 908.

1. Hinsche, N.F.: Phys. Rev. A 79 (2009) 023822.

Vagner, P., Moško, M., Németh, R., Wagner, L., and Mitas, L.: Hartree-Fock versus quantum Monte Carlo study of persistent current in a one-dimentional ring with single scatterer, Physica E 32 (2006) 350-353.

1. Mobini, A.: Physica E 101 (2018) 162.
2. Solaimani, M.: Optic. Quantum Electron. 54 (2022) 145.

Moško, M., Vagner, P., Bajdich, M., Schaepers, T., : Coherent „metallic“ resistance and medium localization in a disordered one-dimensional insulator. Phys. Rev. Lett. 91 (2003) 136803.

1. Gopar, V.: Europhys. Lett. 71 (2005) 966, also: arXiv: cond-mat 0507339.
2. Martens, H.C.F.: Phys. Rev. Lett. 96 (2006) 136803.
3. Foieri, F.: Phys. Rev. B 74 (2006) 165313, also arXiv: cond-mat 0606715.
4. Markoš, P.: Acta Physica Slovaca 56 (2006) 561.
5. Woloszyn, M.: Acta Phys. Polonica A 110 (2006) 523.
6. Foieri, F.: Physica B 398 (2007) 376.
7. Markoš, P.: Wave propagation: from electrons to photonic crystals and left-hauted materials. Princeton: Princeton Univ. Press 2008. ISBN 978-0-691-12003-3.
8. Baenninger, M.: Physica E 40 (2008) 1347.
9. Diez, E.: Phys. Rev. B 78 (2008) 035118.
10. Ren, W.: Phys. Rev. B 79 (2009) 161404.
11. Camjayi, A.: Phys. Rev. B 86 (2012) 235143.
12. Bhattacharya, D.P.: Superlatt. Microstr. 72 (2014) 126.
13. Nag, S.: Physica E 87 (2017) 237.

Vagner, P., Markoš, P., Moško, M., Schaepers, T., : Coherent resistance of a disordered one-dimensional wire: Expressions for all moments and evidence for non-Gaussian distribution. Phys. Rev. B 67 (2003) 165316.

1. Maksymovicz, A-Z.: J. Non-Crystalline Solids 352 (2006) 4200.
2. Woloszyn, M.: Acta Phys. Polonica A 110 (2006) 523.
3. Benhenni, R.: Physica A 389 (2010) 1002.
4. Culver, A.B.: Phys. Rev. B 109 (2024) 064201.

Mošková, A. and Moško, M.: Phase-shift analysis of two-dimensional carrier-carrier scattering in GaAs and GaN: Comparison with Born and classical approximations, Phys. Rev. B 61 (2000) 3048.

1. Raichev, O.E.: J. of Physics – Cond. Matt. 12 (2000) 6859.
2. Kwong, N.H.: Phys. Rev. Lett. 87 (2001) 027402-1.
3. Kral, K.: Fortschritte der Physik 49 (2001) 1011.
4. Kral, K.: Inter. J. of Modern Physics B 15 (2001) 3503.
5. Král, K.: Physica E 12 (2002) 908.
6. Král, K.: Physica B 314 (2002) 490.
7. Král, K.: Molecular Low Dimensional and Nanostr. Mater. Advanced Appl. 59 (2002) 267.
8. Binder, R.: Proc. Conf. Progress in Nonequilibrium Green’s Functions II. (2003) P. 301.
9. Axt, V.M.: Reports on Progr. in Phys. 67 (2004) 433.
10. Bilykh, V.V.: J. Experiment. Theoret. Phys. 104 (2007) 814.
11. Reeder, R.: J. Applied Phys. 102 (2007) Art.No. 073715.
12. Kukushkin, V.: IEEE Trans. Nanotechnol. 7 (2008) 344.
13. Kukushkin, V.: Phys. Rev. A 78 (2008) 033838.
# 14. Kukushkin, V.: Bulletin Russian Acad. Sci: Physics 73 (2009) 101.
15. Bellotti, E.: J. Applied Phys. 105 (2009) 113103.
16. Nag, S.: Superlatt. Microstr. 48 (2010) 72.
17. Kukushkin, V.: IEEE J. Quantum Electr. 46 (2010) 666.
18. Kukushkin, V.: Semicond. Sci Technol. 25 (2010) 125008.
19. Kukushkin, V.: Semiconductors 44 (2010) 1435.
20. Marchetti, G.: J. Applied Phys. 116 (2014) 163702.

Moško, M. and Vagner, P.: Born approximation versus the exact approach to carrier-impurity collisions in a one-dimensional semiconductor: Impact on the mobility, Phys. Rev. B 59 (1999) R10445-R10448.

1. Guven, K.: J. Phys. – Cond. Matt. 12 (2000) 2031.
2. Schwartz, A.: Physica E 7 (2000) 760.
3. Burki, J.: Phys. Rev. B 62 (2000) 2956.
4. Kaluza, A.: J. Crystal Growth 221 (2000) 91.
5. Kral, K.: Fortschritte der Physik 49 (2001) 1011.
6. Kral, K.: Inter. J. Modern Phys. B 15 (2001) 3503.
* 7. Bronger, T.: Morphologische und optische Studien an V-Graben Quantendrähten: Einfluß der Quantentopfgeometrie auf die Quantenzustände im Draht. Aachen 2001.
8. Král, K.: Physica E 12 (2002) 908.
9. Král, K.: Physica B 314 (2002) 490.
10. Kral, K.: Molecular Low Dimensional and Nanostructured Materials for Advanced Applications. 59 (2002) 267.
11. Das, K.K.: J. Phys.-Cond. Matter 17 (2005) 6675.
12. Nag, S.: Superlatt. Microstr. 48 (2010) 72.
13. Salfi, J.: Nature Nanotechnol. 5 (2010) 737.
14. Salfi, J.: Phys. Rev. B 85 (2012) 235316.
15. Royo, M.: Phys. Rev. B 89 (2014) 155416.
16. Bhattacharya, D.P.: Superlatt. Microstr. 72 (2014) 126.
17. Sano, N.: J. Applied Phys. 118 (2015) 244302.
18. Nag, S.: Physica E 87 (2017) 237.

Moško, M. and Kálna, K.: Carrier capture into a GaAs quantum well with a separate confinement region: comment on quantum and classical aspects, Semicond. Sci Technol. 14 (1999) 790-796.

1. Safonov, I.: Proc.LFNM 2005: 7th Inter. Conf. on Laser and Fiber-Optical Networks Modeling 2005, art. no. 1553178, pp. 16.
2. Safonov, I.: Proc. SPIE 6184 (2006) art. no. 61841K.
3. Talele, K.: Optoelectr. Advan. Mater. 1 (2007) 693.
4. Klymenko, M.V.: Superlatt. Microstruct. 46 (2009) 603.
5. Khalil, H.M.: Nanoscale Res. Lett. 9 (2014) 21.
6. Koziol, Z.: Optica Applicata 44 (2014) 135.
7. Vallone, M.: Phys. Status Solidi B 252 (2015) SI971.
# 8. Aeberhard, U.: In Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods. CRC Press 2017, ISBN 978-149874957-2 441-474.
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10. Kumar, M.: IEEE Trans. Electron Dev. 70 (2023) 5177.
11. Perlangeli, M.: J. Optic. Soc America B 41 (2024) 127.

Vagner, P., Munzar, L., and Moško, M.: Calculation of excitonic absorption spectrum of GaAs quantum wire free-standing in vacuum, Acta Physica Polonica A 92 (1997) 1038.

* 1. Klingshirn, C.: Quantum -wire structures. In: Optical properties I. Berlin: Springer 2001. ISBN: 978-3-540-61740-2. P. 264.
2. Li, Y.M.: Surface Sci 566 (2004) 1057.
3. Li, B.: Phys. Rev. B 77 (2008) 115335.
4. Li, B.: Phys. Rev. B 79 (2009) 085306.

Vagner, P. and Moško, M.: Electron-impurity scattering in free- standing quantum wires: effect of dielectric confinement, J. Applied Phys. 81 (1997) 3196.

1. Manaselyan, A.K.: Physica E 14 (2002) 366.
2. Gasparyan, S.G.: Key Engn. Mater. 277-278 (2005) 881.
3. Zhang, L.: Phys. Lett. A 366 (2007) 256.
4. Jin, S.H.: J. Applied Phys. 102 (2007) art.no. 083715.
5. Konar, A.: J. Applied Phys. 102 (2007) art.no. 123705.
* 6. Manaselyan, A.K.: J. Contemp. Phys. (Armenian AS) 42 (2007) 23.
7. Li, B.: Phys. Rev. B 77 (2008) 115335.
8. Li, B.: Phys. Rev. B 79 (2009) 085306.
9. Li, B.: Microelectr. J. 40 (2009) Sp. Is. 446.
10. Munch, S.: Nanotechnol. 21 (2010) 105711.
11. Yan, B.H.: Nano Lett. 10 (2010) 3791.

Moško, M., Munzar, L., and Vagner, P.: Excitonic effects in free-standing ultrathin GaAs films Phys. Rev. B 55 (1997) 15416.

1. Montes, A.: J. Applied Phys. 84 (1998) 1421.
2. Koh, T.S.: J. Phys.-Cond. Matt. 13 (2001) 1485.
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4. Li, Y.M.: Surface Sci 566 (2004) 1057.
5. Sellami, K.: Superlattice Microstruct. 37 (2005) 43.
6. Li, B.: Phys. Rev. B 77 (2008) 115335.
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8. Li, B.: Microelectr. J. 40 (2009) Sp. Is. 446.
9. Niculescu, E.C.: J. Luminiscence 132 (2012) 585.
10. Mahler, B.: J. American Phys. Soc 134 (2012) 18591.
11. Robert, C.: Phys. Rev. B 86 (2012) 205316.
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15. Wu, Z.-H.: Chinese Phys. B 25 (2016) 037310.
16. Wu, Z.: Acta Phys. Polonica A 134 (2018) 1158.

Kálna, K., Moško, M., and Peeters, F.: Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering, Applied Phys. Lett. 68 (1996) 117.

1. Gruppen, M.: IEEE J. Quantum Electr. 34 (1998) 120.
* 2. Register, L.F.: Inter. J. High Speed Electr. Systems 9 (1998) 1211.
3. Ryzhii, M.: Phys. Rev. B 61 (2000) 2742.
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doc. RNDr. Moško Martin, DrSc.