Ing. Blaho Michal, PhD.

Gregušová, D., Dobročka, E., Eliáš, P., Stoklas, R., Blaho, M., Pohorelec, O., Haščík, Š., Kučera, M., and Kúdela, R.: GaAs nanomembranes in the high electron mobility transistor technology, Materials 14 (2021) 3461.

1. Tian, W.W.: J. Phys.-Cond. Matt. 36 (2024) 345003.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Šatka, A., Blaho, M., Gregušová, D., and Kuzmík, J.: Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs, J. Circuits, Systems Computers 28 (2019) 1940009.

1. Lv, Z.: IEICE Electron. Express 18 (2021) 20.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

1. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.

Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 22nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

#       1. Saglam, B.: IEEE Energy Conv. Congress & Exposition – ECCE 2022, pp. 1-6.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O., and Škvarek, O.: Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions, J. Applied Phys. 124 (2018) 152109.

1. Aguirre, F.L.: IEEE Access 8 (2020)‏ 202174.
2. Aguirre, F.L.: J. Low Power Electron. Appl. 11 (2021) 9.
3. Aguirre, F.L.: Front. in Phys. 9 ( 2021) 735021.
4. Aguirre, F.L.: Micromach. 13 (2022) 2002.
5. Ge, P.Z.: Mater. Today Comm. 35 (2023) 105593.
6. Li, C.Y.: J. Alloys Comp. 961 (2023) 170987.

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

1. Sa, Z.X.: Adv. Functional Mater. 33 (2023) Iss. 38.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O., and Škvarek, O.: Performance of HfOx– and TaOx-based resistive switching structures in circuits for min and max functions implementation, MRS Adv. 3 (2018) Iss. 59, 3427-3432.

1. Garcia, H.: Microelectron. Engn. 216 (2019) 111083.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Vilhan, M., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Simulation analysis of InAlN/GaN monolithic NAND logic cell. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 167-171.

1. Ding, Y.: Applied Sci-Basel 9 (2019) 5196.
2. Palacios Rodriguez, S.: Revista De La Construc. 18 (2019) 398.
3. Gralow, M.: J. Laser Appl.‏ 32 (2020) 021201.
4. Gmeiner, F.: ACM Proc. Chi Conf. Human Factors in Comput. Systems 2023.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations, IEEE Trans. Electron Devices 65 (2018) 2666-2669.

1. Guan, H.: Coatings 9 (2019) 318.
2. Liao, B.: Electronics 8 (2019) 406.
3. Hwang, I.-T.: Applied Sci-Basel 9 (2019) 3610.
4. Lv, Z.: IEICE Electron. Express 18 (2021) 20.

Blaho, M., Gregušová, D.,  Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., and Kuzmík, J.: Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs, Applied Phys. Lett. 111 (2017) 033506.

1. Lee, C.-T.: AIP Adv. 4(2018) 045014.
2. Cui, P.: Sci Rep. 8 (2018) 9036.
3. Yahyazadeh, R.: J. Non-Oxide Glass. 11 (2019) 19.
4. Zhu, Q.: Chinese Phys. B 29 (2020) 047304.
5. Zhang, H.: Micro Nanostruct. 178 (2023) 207579.

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Wurfl, J., and Kuzmík, J.: Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs, Physica Status Solidi a 214 (2017) 1700407.

1. Tokuda, H.: Japan. J. Applied Phys. 59 (2020) 084002.
2. Tapajna, M.: Crystals 10 (2020) 1153.
3. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.
4. Li, J.L.: Superlatt. Microst. 161 (2022) 107064.

Matys, M., Stoklas, R., Blaho, M., and Adamowicz, B.: Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition, Applied Phys. Lett. 110 (2017) 243505.

1. Uedono, A.: J. Applied Phys. 123 (2018) 155302.
2. He, Z.: Semicond. Sci Technol. 34 (2019) 035020.
3. Tapajna, M.: Mater. Sci Semicond. Process. 91 (2019) 356.
4. Asubar, J.T.: IEEE Electron Device Lett. 41(2020) ‏ 693.
5. Zhao, Y.: Phys. Status Solidi a 217 (2020) 1900981.
6. Tapajna, M.: Crystals 10 (2020) 1153.
7. He, J.Q.:Adv. Electron. Mater. 7 (2021) 2001045.
8. Gong, J.R.: Japan. J. Applied Phys. 61 (2022) 011003.
9. Kohler, K.: Semicond. Sci Technol. 37 (2022) 025016.
10. Shibata, T.: Japan. J. Applied Phys. 61 (2022) 065502.
11. Lin, Y.S.: Sci Adv. Mater. 14 (2022) 1419.
12. Gong, J.R.: J. Applied Phys. 132 (2022) 135302.
13. Qiu, S.Y.: AIP Adv. 13 (2023) 055110.
14. Yang, Y.N.: Micromach.14 (2023) 1278.

Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z.,  Kordoš, P., and Hashizume, T.: Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction, Semicond. Sci Technol. 32 (2017) 045018.

1. Liang, X.: Semicond. Sci Technol. 32 (2017) 095010.
2. Yoon, S.-J.: J. Alloys Compounds 741 (2018) 999.
3. Bazaka, K.: Nanoscale 10 (2018) 17494.
4. Wang, C.: Phys. Status Solidi a 215 (2018) 1800092.
5. Gulseren, M.E.: Mater. Research Express 6 (2019) 095052.
6. Gokhan, K.: Solid-State Electron. 158 (2019) 22.
7. Xu, K.: Chemistry-Europ. J. 25 (2019) 5014.
8. Cai, Y.: ICICDT 2019.
9. Biswas, M.: J. Lumines. 222 (2020) 117123.
10. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
11. Cai, Y.: IEEE Access 8 (2020) 95642.
12. Abo-Kahla, D.A.M.: J. Optical Soc America B 37 (2020) A96.
#   13. Abo-Kahla, D.A.M.: Pramana – J. Phys. 94 (2020) 65.
14. Choi, S.: J. Alloys Compounds 854 (2021) 157186.
15. Akazawa, M.: Japan. J. Applied Phys. 60 (2021) 036503.
16. Izsak, T.: Mater. Sci Engn. B 273 (2021) 115434.
17. Schiliro, E.: ACS Applied Electr. Mater. 4 (2022) 406.
18. Wang, C.C.: Applied Phys. Express 17 (2024) 051002.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., :Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

1. Silva, J.C.F.: J. Molecular Model. 23 (2017) 204.
2. Kumar, J.: J. Alloys Compounds 727 (2017) 1089.
3. Sharma, I.: J. Alloys Compounds 723 (2017) 50.
4. Zhou, Y.: J. Colloid Interface Sci 560 (2020) 769.
#    5. Panda, S.: Proc. DevIC 2021, pp. 71-74.
6. Gil-Corrales, J.A.: Inter. J. Molecular Sci 23 (2022) 5169.
7. Panda, S.R.: Physica Scripta 97 (2022) 114006.
8. Panda, S.R.: Physica Scripta 98 (2023) 125984.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J.-F., Grandjean, N., Konstantinidis, G., and Kuzmík, J.: Technology of integrated self-aligned E/Dmode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics, Semicond. Sci Technol. 31 (2016) 065011.

1. Kumar, S.: IEEE Calcutta Conf. – CALCON 2020, pp.‏ 378.
2. Hofstetter, D.: Crystals 11 (2021) 1431.
#     3. Lee, D.: ACS Applied Nano Mater. 5 (2022) 18462.

Čičo, K., Jančovič, P., Dérer, J., Šmatko, V., Rosová, A., Blaho, M., Hudec, B., Gregušová, D., Fröhlich, K., :Resistive switching in nonplanar HfO2-based structures with variable series resistance. J. Vacuum Sci Technol. B 33 (2015) 01A108.

1. Hardtdegen, A.: IEEE Inter. Memory Workshop 2016.
2. Hardtdegen, A.: IEEE Trans. Electron Dev. 65 (2018) 3229.
3. Lin, Chih-Y.: J. Phys. D 52 (2019) 095108.
4. Cueppers, F.: APL Mater. 7 (2019) 091105.
#     5. Yang, J.: ACS Applied Mater. Interfaces 13 (2021) 33244.
6. Ostrovskii, V.: Nanomater. 12 (2022) 63.
7. Yan, J.Q.: IEEE Trans. Nuclear Sci 70 (2023) 807.

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090.

1. Yeh, P.-C.: Applied Phys. Express 8 (2015) 084101.
2. Dutta, G.: IEEE Trans. Electron Dev. 63 (2016) 1450.
3. Freedsman, J.: IEEE Electron Device Lett. 38 (2017) 497.
4. Le, S.P.: J. Applied Phys. 123(2018) 034504.
5. Sato, T.: Applied Phys. Lett. 113 (2018) 063505.
6. Meneghini, M.: Mater. Sci Semicond. Process. 78 (2018) 118.
7. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.
8. Nguyen, D.D.: J. Applied Phys. 130 (2021) 014503.
9. Zhang, W.H.: Results in Phys. 24 (2021) 104209.
10. Lee, D.: ACS Applied Nano Mater. 5 (2022) 18462.
11. Hsieh, H.J.: Mater. Sci Semicond. Process. 169 (2024) 107908.

Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., and Kuzmík, J.: Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506.

1. Nagy, L.: IEEE Proc. 6828415 RADIOELEKTRONIKA 2014. ISBN: 978-1-4799-3714-1.
2. Hahn, H.: IEEE Trans. Electron Dev. 62 (2015) 538.
3. Hahn, H.: J. Applied Phys. 117 (2015) 214503.
4. Qin, X.: Applied Phys. Lett. 107 (2015) 081608.
5. Luekens, G.: J. Applied Phys. 119 (2016) 205705.
6. Dutta, G.: IEEE Trans. Electron Dev. 63 (2016) 1450.
7. Zhang, K.: IEEE SSLChina – IFWS 2016. P. 64.
8. Zhang, K.: Applied Phys. Express 10 (2017) 024101.
9. Duan, T. L.: Nanoscale Res. Lett. 12 (2017) 499.
10. Zhou, X. J.: Superlatt. Microstr. 112 (2017) 1.
#    12. Zhang, K.: Inter. Forum on Wide Bandgap Semiconductors China, IFWS 2016. Conf. Proc. (2017) 7803758, pp. 64-67.
#     13. Singh, P.: Comm. Computer Inf. Sci 892 (2019) 380.
14. Supardan, S. N.: J. Phys. D 53(2020) 075303.
15. Liu, Y.: Sci Rep. 11 (2021) 22431.
16. Liu, S.Y.: IEEE Electron Device Lett. 43 (2022) 1621.

Blaho, M., Gregušová, D., Jurkovič, M., Haščík, Š., Fedor, J., Kordoš, P., Fröhlich, K., Brunner, F., Cho, E., Hilt, O., Würfl, H., Kuzmík, J., : Ni/Au-Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOSHEMTs. Microelectr. Engn. 112 (2013) 204-207.

1. Moon, S.-W.: Japan. J. Applied Phys. 53 (2014) 08NH02.
2. Zhang, Z.: Electron. Lett. 51 (2015) 1201.
3. Zhang, Z.: IEEE Trans. Electron Dev. 63 (2016) 731.
4. Wang, Y.-P.: J. Mater. Chem. C 4 (2016) 11059.
5. Fisichella, G.: Beilstein J. Nanotechnol. 8 (2017) 467.
6. Lin, Y.S.: Micromachines 14 (2023) 1183.
7. Ye, Y.K.: J. Phys. D 57 (2024) 345101.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., : Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

1. Vidu, R.: Frontiers in Systems Neurosci 8 (2014) 91.
#     2. Opris, I.: In Recent advances on the modular organization of the cortex. Springer 2015 ISBN: 978-94-017-9899-0. P. 339.
3. Jahromi, K.E.: IEEE Electron Device Lett. 37 (2016) 43.
4. Pampaloni, N.P.: Front. Neurosci 12 (2019) 953.

Jurkovič, M., Gregušová, D., Palankovski, V., Haščík, Š., Blaho, M., Čičo, K., Fröhlich, K., Carlin, J., Grandjean, N., and Kuzmík, J.: Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region,. IEEE Electron Dev. Lett. 34 (2013) 432-434.

1. Ahmadi, E.: Applied Phys. Lett. 104 (2014) 072107.
#       2. Marek, J.: ASDAM 2014. P. 153.
3. Dimitrijev, S.: MRS Bull. 40 (2015) 399.
4. Lee, K.B.: Applied Phys. Express 8 (2015) 036502.
5. Jebalin, B.K.: Superlatt. Microstr. 78 (2015) 210.
6. Chiu, H.-C.: Microelectron. Reliab. 55 (2015) 48.
7. Huang, H.: Solid-State Electr. 114 (2015) 148.
8. Zaidi, Z. H.: Semicond. Sci Technol. 30 (2015) 105007.
9. Nagy, L.: Inter. Conf. Applied Electron. 2015. 7011707, p. 225.
10. Lee, G.-Y.: Applied Phys. Express 8 (2015) 064102.
#      11. Nagy, L.: IEEE 18th DDECS 2015. 7195673, p. 83.
12. Smith, M. D.: Semicond. Sci Technol. 31 (2016) 025008.
13. Chen, P.-G.: Solid-State Electr. 129 (2017) 206.
14. Jena, K.: Region 10 Annual Inter. Conf. TENCON. IEEE 2017. Art.no. 7848652, p. 3253.
15. Freedsman, J.J.: IEEE Electron Device Lett. 38 (2017) 497.
16. Chander, S.: IEEE ICIEEIMT 2017. P.293.
17. Tiwari, N.: IEMENTECH 2017.
#      18. Gupta, S.: SCOPES 2016. Proc. 2017. Art.no. 7955748, pp. 1777.
19. Wei, L.-C.: J. Nanosci Nanotechnol. 18 (2018) 7400.
20. Chen, P.-G.: Sensors 18 (2018) 2795.
21. Smith, M.D.: Applied Surface Sci 521 (2020) 146297.
22. Toprak, A.: Mater. Res. Express 8 (2021) 126302.
#      23. Jiang Y.: Proc. Inter. Conf. ASIC 2021.
24. Sarkar, S.: Microelectr. Engn. 258 (2022) 111756.
25. Singh, J.: Silicon 14 (2022) 6311.
26. Nie, Z.R.: Micromachines 15 (2024) 571.

Gregušová, D., Hušeková, K., Stoklas, R., Blaho, M., Jurkovič, M., Carlin, J., Grandjean, N., and Kordoš, P.:Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions. Japan. J. Applied Phys. 52 (2013) 08JN07.

1. Schaefer, A.: Semicond. Sci Technol. 29 (2014) 075005.
2. Freedsman, J. J.: Applied Phys. Lett. 107 (2015) 103506.
3. Liu, H.-Y.: IEEE J. Electron Devices Soc 4 (2016) 358.
4. Duan, T.: In Gallium Nitride Power Devices. Pan Stanford 2017. ISBN 978-981-4774-09-3. P. 145-191.
5. Chen, F.: J. Electron Mater. 48 (2019) Iss. SI11.
6. Cui, P.: Japan. J. Applied Phys. 59 (2020) 020901.

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Molnár, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmík, J., : GaN/InAlN/AlN/GaN normally-off HEMT with etched access region. In: WOCSDICE-EXMATEC 2012.Eds. Y. Cordier and J.-Y. Duboz. Island of Porquerolles: CRHEA & CNRS 2012.

     1. Mizutani, T.: J. Applied Phys. 113 (2013) 034502.

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Čičo, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmík, J., : Polarization engineered normally-off GaN/InAlN/AlN/GaN HEMT In: Inter. Workshop on Nitride Semicond. 2012 – IWN. Sapporo 2012..

      1. Mizutani, T.: J. Applied Phys. 113 (2013) 034502.