Mgr. Pavol VAGNER, PhD.

2008

Krčmár, R., Gendiar, A., Moško, M., Németh, R., Vagner, P., and Mitas, L.: Persistent current of correlated electrons in mesoscopic ring with impurity, Physica E 40 (2008) 1507-1509.

2006

Vagner, P., Moško, M., Németh, R., Wagner, L., and Mitas, L.: Hartree-Fock versus quantum Monte Carlo study of persistent current in a one-dimentional ring with single scatterer, Physica E 32 (2006) 350-353.

Gendiar, A., Moško, M., Vagner, P., and Németh, R.: Tunneling of interacting one-dimensional electrons through a single scatterer: Luttinger-liquid behavior in the Hartree-Fock model, Physica E 34 (2006) 596.

Moško, M., Vagner, P., Gendiar, A., and Németh, R.: Coherent transport of interacting electrons through a single scatterer, Physica B 378-380 (2006) 908.

2005

Gendiar, A., Moško, M., Vagner, P., and Németh, R.: Tunneling of interacting fermions in 1D systems, Acta Phys. Polonica 108 (2005) 661-667.

2003

Vagner, P., Markoš, P., Moško, M., and Schäpers, Th.: Coherent resistance of a disordered one-dimensional wire: Expressions for all moments and evidence for non-Gaussian distribution , Phys. Rev. B 67 (2003) 165316.

Moško, M., Vagner, P., Bajdich, M., and Schaepers, Th.: Coherent „metallic“ resistance and medium localization in a disordered one-dimensional insulator , Phys. Rev. Letters 91 (2003) 136803.

2002

Vagner, P., Moško, M., Markoš, P., and Schäpers, Th.: Dephasing of coherent 1D transport in a disordered wire, Physica E 12 (2002) 703-707.

2001

Moško, M., Vagner, P., Markoš, P., and Schäpers, Th.: Decoherence of coherent transport in a disordered one-dimensional wire: Phenomenological model , Condensed Matter (2002) 0111116.

1999

Moško, M. and Vagner, P.: Born approximation versus the exact approach to carrier-impurity collisions in a one-dimensional semiconductor: Impact on the mobility, Physical Review B 59 (1999) R10445-R10448.

1998

Vagner, P. and Moško, M.: Carrier-impurity collisions in a narrow quantum wire: Born approximation versus exact solution. In: Heterostructure Epitaxy and Devices – HEAD’97, Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht, Kluwer Academic Publ. 1998. P. 91.

1997

Moško, M., Munzar, D. and Vagner, P.: Excitonic effects in free-standing ultrathin GaAs films, Physical Review B 55 (1997) 15 416.

Vagner, P. and Moško, M.: Electron-impurity scattering in free- standing quantum wires: effect of dielectric confinement, J. of Applied Physics 81 (1997) 3196.

Vagner, P., Munzar, D., Moško, M.: Calculation of excitonic absorption spectrum of GaAs quantum wire free-standing in vacuum, Acta Physica Polonica A 92 (1997) 1038.

1996

Vagner, P. and Moško, M. : Impurity-scattering limited electron mobility in free-standing quantum wires: image charge effect. In: 25^th Int. School on Physics of Semiconductor Compounds. Jaszowiec 1996, Acta Physica Polonica 90 (1996) 1103.