RNDr. Jaroslava ŠAFRÁNKOVÁ, CSc.

1998

Huran, J., Šafránková, J., and Kobzev, A.P.: Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition, Vacuum 50 (1998) 103.

Šafránková, J., Huran, J., Hotový, I., Kobzev, A.P., and Korenev, S.A.: Characterization of nitrogen-doped amorphous silicon carbide thin films, Vacuum 51 (1998) 165.

1995

Porges, M., Šafránková, J., Lalinský, T., Kostič, I., Rangelow, I.W., Tegude, F.J.: Asymmetric (Schottky — Ohmic) MSM photodetector, Solid State Electr. 38 (1995) 425.

1993

Šafránková, J., Porges, M., Lalinský, T., Mozolová, Ž., Hudek, P., Kostič, I., Kraus, J., von Wendorff, W., Tegude, F.J., and Jäger, D.: Photoelectrica l properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET, Physica Status Solidi A 140 (1993) K111.

Porges, M., Lalinský, T., Šafránková, J., Hudek, P., Kraus, J., Tegude, F.J., von Wendorff, W., and Jäger, D.: GaAs MSM photodiode using the highly doped channel layer of a heterostructure MESFET, Physica Status Solidi A 136 (1993) K65.

1992

Hrubčín, L., Šafránková, J., and Hudek, P.:Effect of proton bombardement on the dark current of GaAs MSM structures, Physica Status Solidi A 133 (1992) K53.

1987

Šafránková, J. and Kordoš, P.: Photocurrent multiplicaion in GaAs Schottky photodiodes, Solid-State Electr. 30 (1987) 93.