MSc. Javad KESHTAR

  • 2024

Gucmann, F., Ťapajna, M., Hušeková, K., Dobročka, E., Rosová, A., Nádaždy, P., Eliáš, P., Egyenes, F., Hrubišák, F., Chouhan, H., Keshtkar, J., Zheng, X., Pomeroy, J.W., Kuball, M., Xiao, X., Mao, Y., Meng, B., Ma, G., and Yuan, C.: Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD, Proc. SPIE 12887 (2024) 1288705.

Gucmann, F., Hušeková, K., Rosová, A., Dobročka, E., Egyenes, F., Hrubišák, F., Keshtkar, J., Chouhan, H., Krettová, M., Eliáš, P., Nádaždy, P., Gregušová, D., Pohorelec, O., Kozak, A., and Ťapajna, M.: Gallium oxide for applications in electronics and optoelectronics. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 13-16. ISBN 978-80-554-2109-4.

Chouhan, H., Hušeková, K., Dobročka, E., Ťapajna, M., Keshtkar, J., Pohorelec, O., Hrubišák, F., Mikolášek, M., and Gucmann, F.: Effect of off-cut sapphire substrate on the structural and optical properties of (-201) ß-Ga2O3 grown by liquid-injection MOCVD. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 117-120-28. ISBN 978-80-554-2109-4.

  • 2023

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

Egyenes, F., Gucmann, F., Rosová, A., Dobročka, E., Hušeková, K., Hrubišák, F., Keshtkar, J., and Ťapajna, M.: Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions, J. Phys. D: Appl Phys. 56 (2023) 045102.

Ťapajna, M., Keshtkar, J., Szabó, O., Shagieva, E., Hušeková, K., Dobročka, E., Fedor, J., Dérer, J., Kromka, A., and Gucmann, F.: Growth of nanocrystalline diamond on gallium oxide using various interlayers. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 28-31.

Yuan, C., Mao, Y., Meng, B., Xiao, X., Hrubišák, F., Egyenes, F., Dobročka, E., Hušeková, K., Rosová, A., Eliáš, P., Keshtkar, J., Ťapajna, M., and Gucmann, F.: Thermal properties of Ga2O3 films and interfaces grown by MOCVD. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 36-39.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Material properties of MOCVD-grown β- and κ-Ga2O3 thin films on 4H-SiC substrates. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 87-90.

Ťapajna, M., Egyenes, F., Hrubišák, F., Hušeková, K., Dobročka, E., Nádaždy, P., Rosová, A., Chouhan, H., Keshtkar, J., and Gucmann., F.: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties. In: IMFEDK 2023: Inter. Meeting for Future of Electron Devices, Kansai. – IEEE, 2023, p. IN10. ISBN 979-8-3503-9378-1.

  • 2022

Keshtkar, J., Hotovy, I., Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes, F., Mikolášek, M., and Ťapajna, M.: NiO thin films for solar-blind photodetectors: structure and electrical properties. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 113-116.

Hrubišák, F., Hušeková, K., Egyenes, F., Gucmann, F., Dobročka, E., Keshtkar, J., and Ťapajna, M.: Effects of repeated annealing in different atmospheres on surface morphology of ε-/κ-Ga2O3 grown on c-plane sapphire using LI-MOCVD method. In: ELITECH´22: 24th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Keshtkar, J., Gucmann, F., Hotový, I., Dobročka, E., Egyenes, F., and Ťapajna, M.: NiO thin films for solar-blind photodetectors:structure and electrical properties. In: ELITECH´22: 24th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Hrubišák, F., Hušeková, K., Egyenes, F., Rosová, A., Kubranská, A., Dobročka, E., Nádaždy, P., Keshtar, J., Gucmann, F., and Ťapajna, M.: Structural and electrical properties of Ga2O3 transistors grown on 4H-SiC substrates. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 115-118.

Hrubišák, F., Egyenes, F., Dobročka, E., Gucmann, F., Hušeková, K., Keshtkar, J., and Ťapajna, M.: Growth and properties of Ga2O3 on 4H-SiC using liquid-injection MOCVD. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 47-50.