Ing. František DUBECKÝ, CSc.

  • 2020

Dubecký, F., Hubík, P., Vanko, G., Zaťko, B., Boháček, P., Sekáčová, M., Šagátová, A., and Nečas, V.: Investigation of Mg contact on SI-GaAs. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 147-151.

  • 2019

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Role of contacts in metal/semi-insulating GaAs/metal structures: symmetrical geometry, AIP Conf. Proc. 2131 (2019) 020010.

Dubecký, F., Zaťko, B., Kolesár, V., Kindl, D., Hubík, P., Gombia, E., and Dubecký, M.: Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs, Applied Surface Sci 467-468 (2019) 1219-1225.

  • 2018

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Sekáčová, M., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Study of metal/semi-insulating GaAs/metal contacts: symmetrical geometry. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 17-20.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

Zaťko, B., Dubecký, F., Ryć, L., Šagátová, A., Sedlačková, K., Kováčová, E., and Nečas, V.:  The study of 4H-SiC alpha particle detectors with different Schottky contact metallization, AIP Conf. Proc. 1996 (2018) 020051.

  • 2017

Dubecký, F., Vanko, G., Zaťko, B., Kováč, J., Gombia, E., Ferrari, C., Šagátová, A., Nečas, V., : 4H-SiC radiation hard photodetector for UV photons and soft X-rays In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 23-27.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., Mudroň, J., : A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization. Applied Surface Sci 395 (2017) 131-135. (VEGA 2/0167/13). (VEGA 2/0152/16). (EURATOM/CU). (CENTE).

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., Fülöp, M., :Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons. Applied Surface Sci 395 (2017) 66-71. (APVV 0321-11). (VEGA 2/0152/16).

Dubecký, F., Hubík, P., Kindl, D., Gombia, E., Boháček, P., Sekáčová, M., Nečas, V., : Study of Mg contact on semi-insulating GaAs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 158-162.. (VEGA 2/0112/17). (APVV 0321-11). (ITMS 26220220170).

  • 2016

Zaťko, B., Šagátová, A., Sedlačková, K., Nečas, V., Dubecký, F., Solar, M., Granja, C., : Detection of fast neutrons from D-T nuclear reaction using 4H-SiC radiation detector. Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660235. (VEGA 2/0152/16). (APVV 0321-11). (ITMS 26220220170).

Ryć, L., Dobrzański, L., Dubecký, F., Jabłoński, S., Parys, P., Słysz, W., Rosiński, M., : Development of x-ray and ion diagnostics of plasma obtained with a 10-TW femtosecond laser. Physica Scripta 91 (2016) 074008.

Dubecký, F., Vanko, G., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., : Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 219-222. (VEGA 2/0167/13). (VEGA 2/0152/16). (APVV 0321-11). (ITMS 26220220170).

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144. (VEGA 2/0152/16). (APVV 0321-11). (APVV 0443-12). (ITMS 26220220170).

Dubecký, F., Oswald, J., Kindl, D., Hubík, P., Dubecký, M., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts. Solid-State Electr. 118 (2016) 30-35. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (EURATOM/CU). (CENTE).

Dubecký, F., Hubík, P., Kindl, D., Gombia, E., Boháček, P., Sekáčová, M., Nečas, V., : Unexpected current lowering of Mg contact on SI-GaAs. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 188-192. (VEGA 2/0152/16). (VEGA 2/0167/13). (CENTE II). (EURATOM/CU).

  • 2015

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., Fülöp, M., : GaAs radiation sensor improvement by low doses od gamma-rays, neutrons and electrons. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 142-144.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Ryć, L., : High resolution alpha particle detectors based on 4H-SiC epitaxial layer. J. Instrument. 10 (2015) C04009.. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (APVV 0443-12).

Dubecký, F., Kindl, D., Hubík, P., Oswald, J., Mičušík, M., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., Šagátová, A., : Peculiarities of metal contacts on semi-insulating GaAs: electrical, photoelectronic and XPS characterization In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 216-220.. (VEGA 2/0167/13). (VEGA 2/0175/13). (APVV 0321-11).

Dubecký, F., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., : Role of the metal contact in electrical transport through M/S-GaAs/M structures In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 112-115.(VEGA 2/0167/13). (VEGA 2/0175/13). (APVV 0321-11).

Dubecký, F., Kindl, D., Osvald, J., Hubík, P., Micusik, M., Boháček, P., Sekáčová, M., Gombia, E., Šagátová, A., : Study of novel metal contacts on semi-insulating GaAs: electrical, photoelectronic and XPS characterization. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 42-43.. (VEGA 2/0167/13). (VEGA 2/0175/13). (APVV 0321-11).

  • 2014

Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 65-68.. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (APVV 0443-12). (EURATOM FU-CT-2007-00051).

Šagátová, A., Zaťko, B., Pavlovič, M., Sedlačková, K., Hybler, P., Dubecký, F., Nečas, V., : GaAs detectors irradiated by low doses of electrons. J. Instrument. 9 (2014) C04036. (VEGA 2/0062/13). (APVV 0321-11).

Dubecký, F., Zaťko, B., Vanko, G., Hubík, P., Oswald, J., Kindl, D., Gombia, E., Kováč, J., Šagátová, A., Nečas, V., : M/SI-GaAs/M diode: role of the metal contact in electrical transport, ɑ-particle and photon detection In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 49-52.. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (EURATOM FU-CT-2007-00051).

Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., Mudroň, J., : Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 214-218. (VEGA 2/0175/13). (VEGA 2/0167/13). (EURATOM/CU). (APVV 0321-11).

Kosa, A., Benkovská, J., Stuchlíková, Ľ., Búc, D., Dubecký, F., Harmatha, L., : Radiation hardness of 4H-SiC structures In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 41-44.. (VEGA 2/0175/13).

Zaťko, B., Sedlačková, K., Dubecký, F., Šagátová, A., Boháček, P., Nečas, V., : Semiconductor detector based on 4H-SiC and analysis of its active region thickness. J. Instrument. 9 (2014) C05041. (ITMS 26220220170). (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (APVV 0443-12).

Boháček, P., Dubecký, F., Sekáčová, M., Zaťko, B., : Temperature dependences of current-voltage characteristics on metal/semi-insulating GaAs structures. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 145-148. (VEGA 2/0175/13). (VEGA 2/0062/13). (APVV 0443-12). (APVV 0321-11). (EURATOM/CU).

Dubecký, M., Dubecký, F., : The work functions of Au/Mg decorated Au(100), Mg(001), and AuMg alloy surfaces: a theoretical studies. J. Chem. Phys. 141 (2014) 094705. (VEGA 2/0167/13). (VEGA 2/0175/13).

  • 2013

Dubecký, F., Kováč, J., Kováč, J., Zaťko, B., Osvald, J., Hubík, P., Kindl, D., Vanko, G., Gombia, E., Ferrari, C., Boháček, P., Šagátová, A., Nečas, V., Sekáčová, M., : 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: design, technology and performance testing, Proc. SPIE 8777B (2013) 8777-56.

Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of 4H-SiC Schottky diode as a detector of ionizing radiation. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 174-177. (APVV 0321-11). (KCMTE).

Dubecký, F., Zaťko, B., Gombia, E., Šagátová, A., Nečas, V., : Detection performance study of SI-GaAs detectors with novel electrode metallization. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 186-190. (VEGA 2/0167/13). (APVV 0321-11). (EURATOM/CU).

Benkovská, J., Kosa, A., Stuchlíková, Ľ., Dubecký, F., Harmatha, L., : DLTS study of neutron bombarded 4H-SiC detector. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P.274-277. (APVV 0321-11). (EURATOM/CU).

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., Chodák, I., : Semi-insulating GaAs detectors optimized for fast neutron detection,. J. Instrument. 8 (2013) C03016. (VEGA 2/0192/10). (APVV 0321-11).

Dubecký, F., Dubecký, M., Hubík, P., Kindl, D., Gombia, E., Baldini, M., Nečas, V., : Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs,. Solid-State Electr. 82 (2013) 72-76. (APVV 0450-10). (EURATOM/CU).

  • 2012

Príbytný, P., Dubecký, F., Donoval, D., Chvála, A., Marek, J., Molnár, M., : Analysis and optimization of silicon detector supported by electro-physical modeling and simulation. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 349-352.

Ryć, L., Calcagno, L., Dubecký, F., Margarone, D., Nowak, T., Parys, P., Pfeifer, M., Riesz, F., Tomisi, L., : Application of single-crystal CVD diamond and SiC detectors for diagnostics of ion emission from laser plasmas. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 255-258.

Dubecký, F., Dubecký, M., : Comment on “Simulation of Schottky and Ohmic contacts on CdTe” [J. Appl. Phys. 109, 014509 (2011)]. J. Applied Phys. 111 (2012) 026102. (APVV 0450-10).

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., Nečas, V., : Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005. (VEGA 2/0192/10). (VEGA 2/0153/10). (APVV 0450-10).

Šagátová, A., Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Nečas, V., : Influence of active volume on detection efficiency of GaAs neutron detectors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 147-150.

Dubecký, F., Hubík, P., Gombia, E., Kindl, D., Dubecký, M., Mudroň, J., Boháček, P., Sekáčová, M., : Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 143-146.

Dubecký, F., Príbytný, P., Vanko, G., Zaťko, B., Gombia, E., Baldini, M., Hrkút, P., Nečas, V., Donoval, D., : Novel concepts of soft X-ray detector based on semi-insulating GaAs. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 29-32.

Šagátová, A., Zaťko, B., Dubecký, F., Boháček, P., Sedlačková, K., Nečas, V., : Semi-insulating GAAS detectors of fast neutrons. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 59-62.

Zaťko, B., Šagátová, A., Dubecký, F., Sedlačková, K., Boháček, P., Nečas, V., : Study of particle detector based on SiC epitaxial layer. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 55-58.

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Zaťko, B., Kováč, P., Baček, D., Baldini, M., Ryć, L., Nečas, V., : Surface barrier 4H-SiC soft X-ray detector for hot plasmas diagnostic. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 247-250.

  • 2011

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047. (VEGA 2/0192/10). (VEGA 2/0153/10). (APVV 0713-07). (EURATOM/CU).

Zaťko, B., Dubecký, F., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using semi-insulating GaAs coated by high density polyethylene. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 244-247.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L. : Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics. Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133. (VEGA 2/0192/10).

Rybár, J., Kosa, A., Dubecký, F., Petruš, M., Stuchlíková, Ľ., Benkovská, J., Harmatha, L., Hrkút, P., Baček, D., Kováč, P., : DLTS study of neutron bombarded silicon detector. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 192-195.

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Baldini, M., Ryć, L., Zaťko, B., Nečas, V., : Characterization of epitaxial 4H-SiC as a material for spectrometric radiation detectors. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 240-243.

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Nečas, V., Mudroň, J., : Technology and performance study of a two-line monolithic X- and \gamma -ray detection chip Based on Semi-Insulating GaAs. IEEE Trans. Nuclear Sci 58 (2011) 3354-3358.

  • 2010

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Detection of soft X-rays using semi-insulating GaAs detector. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 219-222.

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Evaluation of semi-insulating GaAs detector in soft x-ray region. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 236-239.

Zápražný, Z., Korytár, D., Dubecký, F., Áč, V., Stachura, Z., Lekki, J., Bielecki, J., Mudroň, J., : Experience with imaging by using of microfocus x-ray source, J. Electrical Engn. 61 (2010) 287-290.

Zápražný, Z., Korytár, D., Dubecký, F., Áč, V., Lekki, J., Stachura, Z., Bielecki, J., Mudroň, J., : First experience with imaging using microfocus x-ray source. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 240-243.

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Šalát, T., Nečas, V., Mudroň, J., : Performance study of 2×64 pixel two-line monolithic x-ray detection chip on semi-insulating GaAs. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 244-247.

Dubecký, F., Kováč, J., Mudroň, J., Hubík, P., Dubecký, M., Gombia, E., : Photocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 29-32.

Dubecký, F., Ladzianský, M., Kindl, D., Nečas, V., : Semi-insulating GaAs radiation detectors: PICTS study of neutroninduced defects. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 207-210.

  • 2009

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134. (VEGA 2/7170/27).

Dubecký, F., Hubík, P., Gombia, E., Zaťko, B., Kindl, D., Boháček, P., : Anomalous charge current transport in semi-insulating GaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface. In: Progress in Applied Surface, Interface and Thin Film Sci 2009. Bratislava: Com. Univ. 2009. P. 19-22.

Ladzianský, M., Šagátová, A., Nečas, V., Dubecký, F., Linhart, V., : Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 135-137. (VEGA 2/7170/27).

Ladzianský, M., Šagátová, A., Nečas, V., Dubecký, F., Kindl, D., : Neutron irradiated detectors based on semi-insulating GaAs studied by means of picts. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 243-246.

Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Grybos, P., : Portable x-ray CT mini system based on monolithitic semiinsulating GaAs detectors using perspective imaging reconstruction techniques. In: IMEKO XIX World. Eds. P.S. Girao, P.M. Ramos. IMEKO, 2009. ISBN 978-963-88410-0-1. P. 1680-1683.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Ščepko, P., Mudroň, J., : Quantum imaging X–ray CT systems based on GaAs radiation detectors using perspective imaging reconstruction techniques, Measurement Sci Rev. 9, Sec. 3 (2009) 27-32.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., : Spectrometric performance study of semi-insulating GaAs radiation detector at reduced temperatures. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 231-234.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., : Two solutions of the quantum imaging x-ray CT system based on GaAs radiation detectors. In: Measurement 2009. Eds. M. Tyšler et al. Bratislava: IMS SAS 2009. ISBN 978-80-969672-1-6. P. 377-380.

  • 2008

Ryć, L., Dobrzański, L., Dubecký, F., Kaczmarczyk, J., Pfeifer, M., Riesz, F., Słysz, W., Surma, B., :Application of MSM InP detectors to the measurement of pulsed X-ray radiation. Radiation Effects Defects in Solids 163 (2008) 559-567.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Juráš, V., : Experiments with application of image reconstruction method based on perspective imaging techniques x-ray CT mini system. In: IWSSIP 2008. Eds. G. Rozinaj et al. Bratislava: FEI STU 2008. P. 33-36.

Ladzianský, M., Šagátová, A., Dubecký, F., Nečas, V., : Changes in deep level states of neutron damaged Semi-insulating GaAs detectors. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 125-128.

Boháček, P., Dubecký, F., Hubík, P., Zaťko, B., Chromik, Š., Sekáčová, M., : New kind of quasi-ohmic metallization in semi-insulating GaAs: Role in electrical charge transport. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 32-35.

Zaťko, B., Dubecký, F., Přibil, J., Mudroň, J., : On current development of quantum imaging X–CT system using GAAS radiation detectors. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 271-274.

Zaťko, B., Dubecký, F., Ščepko, P., Grybos, P., Mudroň, J., Maj, P., Szcygiel, R., Frollo, I., : On the detection performance of semi-insulating GaAs detectors coupled to multichannel ASIC DX64 for X-ray imaging applications. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 101-104. (APVV 51-0459-06). (VEGA 2/7170/27).

Zaťko, B., Dubecký, F., Ščepko, P., Grybos, P., Mudroň, J., : Preliminary tests of semi-insulating GaAs radiation detectors coupled to the multichannel ASIC DX64 readout chip. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 339-342.

Dubecký, F., Ryć, L., Kaczmarczyk, J., Scholz, M., Zaťko, B., Boháček, P., Huran, J., Ladzianský, M., : Registration of fast netrons emission from hot plasmas by bulk semi-insulating GaAs detectors. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 299-302.

Boháček, P., Zaťko, B., Dubecký, F., Chromik, Š., Huran, J., Sekáčová, M., : Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 105-108. (APVV 51-0459-06). (VEGA 2/7170/27).

Dubecký, F., Zaťko, B., Hubík, P., Boháček, P., Gombia, E., Chromik, Š., : Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 295-298.

  • 2007

Přibil, J., Frollo, I., Dubecký, F., Zaťko, B., Juráš, V., : Automated positional unit of testing x-ray CT mini system. In: Applied Electronics 2007. Pilsen: Univ. West Bohemia, 2007. ISBN: 987-80-7043-537-3. P. 163-166.

Šagátová-Perďochová, A., Dubecký, F., Zaťko, B., Chodák, I., Ladzianský, M., Nečas, V., : Detectors of fast netrons based on semi-insulating GaAs with neutron converter layers. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 56-69.

Zaťko, B., Dubecký, F., : First results with 64 channels readout chip DX64 connected to semi-insulating gallium arsenide radiation detectors. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 141-144.

Boháček, P., Dubecký, F., Sekáčová, M., : Charge carrier transport in semi-insulating GaAs M-S-M structures: role of electrode technology. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 175-178.

Zaťko, B., Dubecký, F., Ščepko, P., Mudroň, J., Stranovský, I., : Imaging performance study of the quantum X-ray scanner based on GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 66-69.

Dubecký, F., Ferrari, C., Korytár, D., Gombia, E., Nečas, V., : Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base mnaterials. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 27-31. (VEGA 2/7170/27).

Dubecký, F., Srnánek, R., Ferrari, C., Gombia, E., Kúdela, R., John, J., : Physical properties of low temperature GHaAs/InP strained heterojunction: micro-raman spectroscopy and x-ray diffraction study. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 187-190.

Šagátová-Perďochová, A., Ladzianský, M., Zaťko, B., Dubecký, F., Nečas, V., : Registration of neutrons by GaAs radiation detectors. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 149-152.

Dubecký, F., Boháček, P., Sekáčová, M., Zaťko, B., Lalinský, T., Linhart, V., Šagátová-Perďochová, A., Mudroň, J., Pospíšil, S., : Role of electrode metallization in performance of semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 87-89. (VEGA 2/7170/27).

Zaťko, B., Dubecký, F., Procházková, O., Nečas, V., : Role of electrode metalllization in the performance of bulk semi-insulating InP radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 98-102.

Šagátová-Perďochová, A., Zaťko, B., Dubecký, F., Nečas, V., : Sensors of gamma rays based on SI GaAs, Časopis pre elektrotechniku a energetiku 13 (2007) 140-142.

Boháček, P., Dubecký, F., Sekáčová, M., : Simulation of the reverse I-V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs. Semicond. Sci Technol. 22 (2007) 763-768. (VEGA 2/7170/27).

Dubecký, F., Nečas, V., : Study of radiation detectors based on semi-insulating GaAs and InP: aspects of material and electrode technology. Proc. SPIE 6706 (2007) 67061D.

  • 2006

Mudroň, J., Dubecký, F., : Comparison of optical properties of semi-insulating Gallium Arsenide and Indium Phosphide irradiated by neutrons. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 274-278.

Boháček, P., Dubecký, F., Sekáčová, M., : Current-voltage characteristics of semi-insulating GaAs Schottky barrier structures: measurement and simulation. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 169-172.

Srnánek, R., Dubecký, F., Zalusky, F., Irmer, G., Kúdela, R., Vincze, A., Novotný, I., John, J., : Diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 55-58.

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Linhart, V., : Etched trenches in technology of monolithic strip detectors based on semi-insulating GaAs. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 74-77.

Šagátová-Perďochová, A., Linhart, V., Dubecký, F., Zaťko, B., Nečas, V., Pospíšil, S., : Experimental analysis of the electric field distribution in GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 187-191.

Dubecký, F., Zaťko, B., Frollo, I., Juras, J., Přibil, J., Jakubek, J., Mudroň, J., : First results observed with test X-CT system using GaAs radiation detectors working in single photon counting regime. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 213-216.

Šagátová-Perďochová, A., Ladzianský, M., Zaťko, B., Žaťko, M., Dubecký, F., Nečas, V., : GaAs detectors of fast neutrons. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 70-73.

Ladzianský, M., Šagátová-Perďochová, A., Zaťko, B., Nečas, V., Dubecký, F., : Changes of GaAs neutron detectors properties after fast neutron irradiation. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 217-220.

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Haščík, Š., Sekáčová, M., Huran, J., : Investigation of etched trenches in technology of LEG semi-insulating GaAs monolithic linear detector array. Nuclear Physics B – Proc. Suppl. 150 (2006) 194-199.

Zaťko, B., Dubecký, F., : Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature. IEEE Trans. Nuclear Sci 53 (2006) 625-629.

Zaťko, B., Dubecký, F., Procházková, O., Nečas, V., : Performance study of bulk semi-insulating InP radiation detectors with different electrode metallization. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 161-164.

Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Performance study of semi-insulating GaAs radiation detectors I: role of key physical parameters of base material. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 326-330.

Dubecký, F., Makovník, M., Pivarč, J., Boháček, P., Sekáčová, M., Zaťko, B., Linhart, V., Šagátová-Perďochová, A., Pospíšil, S., : Performance study of semi-insulating GaAs radiation detectors II: role of electrode metallisation. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 331-334.

Ladzianský, M., Šagátová-Perďochová, A., Nečas, V., Zaťko, B., Dubecký, F., : Radiation damage of GaAs detectors by neutrons. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 46-49.

Zaťko, B., Dubecký, F., Nečas, V., Procházková, O., : Radiation detectors based on semi-insulating InP: role of electrode technology. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 65-69.

Ferrari, C., Dubecký, F., Kúdela, R., John, J., : X-ray diffraction characterization of low temperature grown GaAs/InP epilayers. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 143-146.

  • 2005

Šagátová-Perďochová, A., Melov, V., Bešše, I., Dubecký, F., Nečas, V., Haupt, L., : Active area of GaAs pad detector tested by x-ray beam. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 161-194.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., Huran, J., : Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images. Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Zaťko, B., : Guard-ring and charge collection efficiency of GaAs detector Advances in Electrical and Electronic Engn. 4 (2005) 75-78.

Zaťko, B., Dubecký, F., Ščepko, P., Melov, V., Herms, M., Haupt, L., : Performance study of monolithic line radiation detector based on semi-insulating GaAs using X-ray source. Nuclear Instr. and Methods in Phys. Res. A 551 (2005) 78-82.

Dubecký, F., Hulicius, E., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Sekáčová, M., Boháček, P., Pangrác, J., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with blocking electrode formed by P+ homo- and heterojunction. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 153-156.

Dubecký, F., Zaťko, B., Gombia, E., Sekáčová, M., Boháček, P., Huran, J., : Recent progress in development of monolithic strip line X-ray detectors based on semi-insulating InP. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 157-160.

  • 2004

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Digital X-ray scanner based on monolithic line of semi-insulating GaAs radiation detectors. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 21-24.

Ryć, L., Dubecký, F., Kozlowska, A., Krása, J., Králiková, B., Pfeifer, M., Parys, P., Pura, B., Riesz, F., Rohlena, K., Skála, J., Ullschmied, J., : Fast MSM InP detectors for measurement of X-ray emission from laser plasmas. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 183-186.

Zaťko, B., Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Melov, V., Škriniarová, J., Haupt, L., : First test of radiation line detector based on semi-insulating GaAs using x-ray source. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 299-302.

Šagátová-Perďochová, A., Nečas, V., Ly Anh, T., Dubecký, F., Boháček, P., Sekáčová, M., Pavlicová, V., :Influence of top contact topology on detection properties of semi-insulating GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 103-110.

Kaminskii, V., Pawlowski, M., Kozlowski, R., Surma, B., Dubecký, F., Yamada, M., Fukuzawa, M., :Investigation of compensation defect centres in semi-insulating InP crystals. Eur. Phys. J. Appl. Phys. 27 (2004) 171-175.

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Monolithic array of semi-insulating GaAs detectors: Technology, performance and application in digital x-ray scanner. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 255-258.

Huran, J., Hotový, I., Dubecký, F., Balalykin, N., : N-doped a-SiC:H films deposited by PECVD annealed by pulse electron beam. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 93-97.

Zaťko, B., Dubecký, F., Boháček, P., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Huran, J., Nečas, V., Sekáčová, M., Förster, A., Kordoš, P., : On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 111-120.

Dubecký, F., Ščepko, P., Nečas, V., Zaťko, B., Sekerka, V., Sekáčová, M., Hudec, M., Huran, J., : Quantum digital x-ray scanner based on SI GaAs detectors: overal description and first imaging results. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 46-51.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

Zaťko, B., Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Melov, V., Škriniarová, J., Haupt, L., : Test of 24 strip line radiation detector based on semi-insulating GaAs using X-ray source. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 243-246.

Šagátová-Perďochová, A., Ly Anh, T., Nečas, V., Dubecký, F., Pavlicová, V., : The influence of etched trenches around contacts of SI GaAs strip radiation detector on its properties. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 191-194.

Ly Anh, T., Šagátová-Perďochová, A., Nečas, V., Rusňák, T., Dubecký, F., : The property degradation of SI GaAs radiation detectors due to photon irradiation. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 154-158.

  • 2003

Zaťko, B., Dubecký, F., Gombia, E., Žďánský, K., Nečas, V., : Evaluation of semi-insulating GaAs detectors for nuclear radiation detection. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 111-114.

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Boháček, P., Šagátová-Perďochová, A., Hudec, M., Sekáčová, M., Huran, J., : Modular X-ray scanner based on GaAs detectors: status of development. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 115-119.

Ly Anh, T., Šagátová-Perďochová, A., Nečas, V., Rusňák, T., Dubecký, F., Dobrovodský, J., : Radiation hardness of SI GaAs detectors to gamma photons. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 101-106.

Šagátová-Perďochová, A., Ly Anh, T., Nečas, V., Dubecký, F., Pavlicová, V., : The influence of SI GaAs detector topology on detection properties. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 96-100.

  • 2002

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

Dubecký, F., Zaťko, B., Nečas, V., Ščepko, P., Gajtanská, M., Sekáčová, M., Šagátová-Perďochová, A., Sekerka, V., Huran, J., Boháček, P., Hudec, M., : Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in γ-ray computer tomograph for industrial purposes. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 258.

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

Boháček, P., Morvic, M., Betko, J., Dubecký, F., Huran, J., : Electrical properties of semi-insulating GaAs irradiated with neutrons. In: SIMC-XII-2002. Eds.: J. Breza et al. Piscataway: IEEE 2002. P. 31.

Ryć, L., Dubecký, F., Pfeifer, M., Pura, B., Riesz, F., Słysz, W., : Evaluation of GaAs and InP MSM detectors for detection of pulsed x-ray emission from laser plasmas. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 280.

Dubecký, F., Zaťko, B., Boháček, P., Šmatko, V., Ferrari, C., : Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs as implanted and LT MBE GaAs interface Physik Mikrostrukturierter Halbleiter 27 (2002) 65-70.

Caria, M., Barberini, L., Cadeddu, S., Giannattasio, A., Rusani, A., Sesselego, A., Lai, A., D’Auria, S.,Dubecký, F., : Gallium arsenide photodetectors for imaging in the far ultraviolet region. Applied Phys. Lett. 81 (2002) 1506-1508.

Dubecký, F., Zaťko, B., Ferrari, C., Šmatko, V., Förster, A., Kordoš, P., : Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LTG MBE GaAs interface. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 169.

Zaťko, B., Dubecký, F., Nečas, V., : Influence of temperature in spectrometric performances of the radiation detector based on semi-insulating GaAs. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 269.

Dubecký, F., Zaťko, B., Sekáčová, M., Ferrari, C., Boháček, P., Nečas, V., : On the role of quasi-ohmic back contact in electrical charge transport of diodes based on semi-insulating GaAs. In: APCOM 2002. Eds.: J.Mudroň et al. Liptovský Mikuláš: Military Academy, 2002. ISBN: 80-8040-186-1. P. 90-94.

Šagátová-Perďochová, A., Ly Anh, T., Nečas, V., Dubecký, F., : Optimization of SI GaAs detector volume. In: APCOM 2002. Eds.: J.Mudroň et al. Liptovský Mikuláš: Military Academy, 2002. ISBN: 80-8040-186-1. P. 105-109.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., Pelfer, P., : Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP. Nuclear Instrum. Methods in Physics Research A 487 (2002) 27-32.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Huran, J., Boháček, P., Ferrari, C., Kordoš, P., Förster, A., : Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 145.

Ly Anh, T., Šagátová-Perďochová, A., Nečas, V., Dubecký, F., : SI GaAs detector performance after high doses of gamma radiation. In: APCOM 2002. Eds.: J.Mudroň et al. Liptovský Mikuláš: Military Academy, 2002. ISBN: 80-8040-186-1. P. 99-104.

Surma, B., Wnuk, A., Dubecký, F., Piersa, M., Hruban, A., : The photoluminiscence studies of high purity InP. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 177.

Šagátová-Perďochová, A., Dubecký, F., Ly Anh, T., Nečas, V., Boháček, P., Sekáčová, M., : The role of semi-insulating GaAs detector topology in detection performance. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 265.

Owens, A., Peacock, A., Bavdaz, M., Brammertz, G., Dubecký, F., Gostilo, V., Gryaznov, D., Haack, N., Krumrey, M., Loupilov, A., : The X-ray response of InP: Part B, synchrotron radiation measurements. Nuclear Instr. Methods in Phys. A 491 (2002) 444-451.

  • 2001

Darmo, J., Dubecký, F., Zaťko, B., Nečas, V., Pelfer, P., : An exploration of the semi-insulating GaAs-based particle detector at temperatures below 300 K. Nuclear Instr. Methods in Phys. A 458 (2001) 437-440.

Nečas, V., Ly Anh, T., Sekáčová, M., Darmo, J., Dubecký, F., Šagátová-Perďochová, A., : Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses. Nuclear Instr. Methods in Phys. A 458 (2001) 348-351.

Dubecký, F., Zaťko, B., Boháček, P., Nečas, V., Sekáčová, M., Krempasky, M., : On performance and radiation hardness of radiation detectors based on semi-insulating InP. In: APCOM 2001. Liptovský Mikuláš: Military Academy, 2001. P. 71-76.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

Šagátová-Perďochová, A., Ly Anh, T., Nečas, V., Dubecký, F., : Optimization of semi-insulating GaAs detector of ionizing radiation for modern digital radiography. In: APCOM 2001. Liptovský Mikuláš: Military Academy, 2001. P. 97-102.

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Darmo, J., Krempasky, M., Sekáčová, M., :Present status and perspectives of the radiation detectors based on InP materials. Nuclear Instr. Methods in Phys. A 458 (2001) 400-405.

Ly Anh, T., Šagátová-Perďochová, A., Nečas, V., Dubecký, F., : Stability of detection parameters of radiation detectors based on semi-insulating GaAs. In: APCOM 2001. Liptovský Mikuláš: Military Academy, 2001. P. 103-108.

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., Pelfer, P., : The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

  • 2000

Zaťko, B., Dubecký, F., Darmo, J., Euthymiou, P., Nečas, V., Krempasky, M., Sekáčová, M., Korytár, D., Csabay, O., Harmatha, L., Pelfer, P., : Electrical and detection performance of radiation detector based on bulk semi-insulating InP: Role of detector volume. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 429-432.

Zaťko, B., Dubecký, F., Darmo, J., Krempasky, M., Nečas, V., : Estimation of the active region in radiation detector based on semi-insulating GaAs, J. Electr. Engn. 51 (2000) 249-253.

Korytár, D., Ferrari, C., Surma, B., Strzelecka, S., Dubecký, F., Huran, J., Fornari, R., Pekárek, L., Procházková, O., Šmatko, V., Hruban, A., : On physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 183-186.

Dubecký, F., Zaťko, B., Darmo, J., Sekáčová, M., Krempasky, M., Nečas, V., Hlaváč, S., Ruček, M., Senderák, R., Szentpali, B., : On spectrometric performance of GaAs based radiation detectors. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 475-478.

Mudroň, J., Müllerová, J., Csabay, O., Dubecký, F., Euthymiou, P., Harmatha, L., Zardas, E., : Optical properties of Si-, and Zn-, doped epitaxial layers of InP grown by MOCVD on Fe- doped semi-insulating InP substrates. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 80-83.

Ryć, L., Dubecký, F., Surma, B., Dobrzański, L., Hruban, A., Strzelecka, S., Dresner, J., : Performance of GaAs photoconductive detectors fabricated from different starting materials. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 407-410.

Dubecký, F., Huran, J., Darmo, J., Zaťko, B., Krempasky, M., Boháček, P., Sekáčová, M., Bešše, I., Nečas, V., Hotový, I., Fornari, R., Gombia, E., Pelfer, P., : Performance of radiation detectors based on semiinsulating GaAs and InP. In: Sensors Microsystems. Singapore: World Sci 2000. P. 437-441.

Surma, B., Strzelecka, S., Gladysz, M., Jurkiewicz-Wagner, E., Hruban, A., Dubecký, F., : Photoluminiscence of active native-like shallow acceptor generated during annealing of semi-insulating GaAs. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 191-194.

Dubecký, F., Zaťko, B., Darmo, J., Sekáčová, M., Nečas, V., Förster, A., Kordoš, P., : Radiation detector based on bulk semi-insulating GaAs: Role of detector geometry abnd electrode technology. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 187-190.

Zaťko, B., Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Nečas, V., Boháček, P., Ruček, M., : Role of electron technology in performance of radiation detectors based on bulk semi-insulating GaAs. In: APCOM 2000. Liptovský Mikuláš: Military Academy 2000. P. 133-136.

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Zaťko, B., Darmo, J., Krempasky, M., Sekáčová, M., : Semi-insulating InP detectors for solar neutrino experiment. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 99-104.

Boháček, P., Morvic, M., Betko, J., Dubecký, F., Huran, J., : Study of semi-insulating GaAs irradiated with neutrons using conductivity, Hall effect, and magnetoresistance measurement. In: APCOM 2000. Eds. J.Mudroň et al. Liptovský Mikuláš: Military Academy 2000. P. 129.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Boháček, P., Bešše, I., Ruček, M., Nečas, V., Pelfer, P., Senderák, R., Pinčík, E., Somora, M., Kolesár, F., Hudek, P., Kostič, I., : Technology and performance of x-and γ-ray 32 pixel line detector based on semi-insulating GaAs, J. Electrical Engn. 51 (2000) 30-35.

Dubecký, F., Darmo, J., Zaťko, B., Fornari, R., Nečas, V., Krempasky, M., Pelfer, P., Sekáčová, M., Boháček, P., : X-ray and gamma-ray detectors based on bulk semi-insulating GaAs&InP: Present status and prospects. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 151-158.

  • 1999

Dubecký, F., Darmo, J., Zaťko, B., Krempasky, M., Hasenöhrl, S., Procházková, O., Bešše, I., Sekáčová, M., Boháček, P., Pelfer, P., Nečas, V., : Investigation of X-ray and γ-ray detectors based on GaAs and InP with electrodes grown by MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 263.

Zaťko, B., Dubecký, F., : New generation of semiconductor materials for particle detector. In: ELITECH `99. Eds.: J.Tóbik, R.Redhammer. Bratislava: STU 1999. P. 27-30.

Darmo, J., Dubecký, F., : Particle detector grade bulk semi-insulating GaAs: deep-level states studied by admittance transient spectroscopy. In: SIMC-X. Eds.: Z.Liliental-Weber and C.Miner. Piscataway: IEEE 1999. P. 80-83.

Ivančo, J., Dubecký, F., Darmo, J., Krempasky, M., Bešše, I., Senderák, R., : Semi-insulating GaAs-based Schottky contacts for detector of ionising radiation: An effect of the interface treatment Nuclear Instr. Methods in Phys. Research A 434 (1999) 158-163.

Korytár, D., Ferrari, C., Strzelecka, S., Šatka, A., Darmo, J., Dubecký, F., Hruba, L., : Study of crystal defects in radiation detectors grade semi-insulating GaAs. In: SIMC-X. Eds.: Z.Liliental-Weber and C.Miner. Piscataway: IEEE 1999. P. 331-334.

Dubecký, F., Darmo, J., Krempasky, M., Nečas, V., Pelfer, P., Boháček, P., Sekáčová, M., : Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication. In: SIMC-X. Eds.: Z.Liliental-Weber and C.Miner. Piscataway: IEEE 1999. P. 149-152.

Dubecký, F., Krempasky, M., Darmo, J., Nečas, V., Hudek, P., Somora, M., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Kostič, I., : Study of performance of the first 32 pixel line chip for x-and γ-ray detection based on bulk semi-insulating GaAs. In: APCOM ’99. Eds. P. Macko et al. Lipt. Mikuláš: Military Acad. 1999. ISBN: 80-8040-098-9. P. 58.

Dubecký, F., Krempasky, M., Darmo, J., Somora, M., Nečas, V., Hlaváč, S., Hudek, P., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Belov, M., : The first results on GaAs 32 pixel line chip for x- and ç-ray detection. In: Proc. 3rd Inter. Symp. Microelectr. Technolog. Microsyst. Košice: FEI-TU 1999. P. 127-131.

  • 1998

Darmo, J., Dubecký, F., Kordoš, P., Förster, A., : Annealing effect on concentration of EL-6like deep-level state in low-temperature-grown molecular beam epitaxial GaAs Applied Phys. Lett. 72 (1998) 590.

Darmo, J., Dubecký, F., Hardtdegen, H., Hollfelder, M., Schmidt, R., : Deep-level states in MOVPE AlGaAs: The influence of carrier gas J. Crystal Growth 186 (1998) 13.

Dubecký, F., Fornari, R., Darmo, J., Pikna, M., Gombia, E., Krempasky, M., Sekáčová, M., Hudek, P., Ruček, M., : Electrical and detection properties of the particle detectors based on LEC semi-insulating InP Nuclear Instr. Methods in Phys. Research A 408 (1998) 491.

Zaťko, B., Dubecký, F., : New generation of semiconductor materials for particle detector. In: ELITECH 98. Bratislava: TU 1998. P. 222.

Pelfer, P., Dubecký, F., Fornari, R., Darmo, J., Pikna, M., Krempasky, M., Gombia, E., Sekáčová, M., Ruček, M., : On the electrical and detection performance of particle detectors based on bulk semi-insulating InP. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 335.

Mudroň, J., Müllerová, J., Dubecký, F., Huran, J., : Optical properties of InP:Fe irradiated by fast neutrons. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 235.

Mudroň, J., Müllerová, J., Dubecký, F., : Optical properties of semi-insulating GaAs irradiated by neutrons Solid State Electron. 42 (1998) 243.

Dubecký, F., Darmo, J., Krempasky, M., Pikna, M., Šatka, A., Nečas, V., Pelfer, P., Boháček, P., Sekáčová, M., : Role of physical parameters of bulk semi-insulating GaAs in detection performance of particle detectors. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 339.

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Krempasky, M., Gombia, E., Darmo, J., Mosca, R., Sekáčová, M., : Semi-insulating InP particle detectors for X- and gamma-ray detection, Mater. Res. Soc Symp. 487 (1998) 477.

  • 1997

Dubecký, F., Krempasky, M., Boháček, P., Sekáčová, M., Fornari, R., Gombia, E., Pikna, M., Pelfer, P., : Electrical and detection characteristics of improved particle detectors based on semi-insulating InP. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 269..

Dubecký, F., Krempasky, M., Pelfer, P., Darmo, J., Pikna, M., Šatka, A., Sekáčová, M., Ruček, M., : GaAs detectors for hard X-ray astronomy Nuclear Phys. (Proc. Suppl.) B 54 (1997) 368.

  • 1996

Darmo, J., Dubecký, F., Kordoš, P., Förster, A., : Annealing characteristics of native defects in low-temperature-grown MBE GaAs. In: 9th Conf. Semicond. Insul. Mater. 1996. Ed. Ch.Fontaine. IEEE Publ. 1996. P.67.

Dubecký, F., Darmo, J., Hlaváč, S., Benovič, M., Pikna, M., Pelfer, P., Förster, A., Kordoš, P., : Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration Nuclear Instr. Methods in Phys. A 377 (1996) 475.

Dubecký, F., Krempasky, M., Darmo, J., Sekáčová, M., Pikna, M., Fornari, R., Gombia, E., Pelfer, P., Hudek, P., : Electrical and detection properties of particle detectors based on LEC semiinsulating InP. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 157.

Pelfer, P., Dubecký, F., Darmo, J., : GaAs radiation detector for physical research and applications. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 209.

Dubecký, F., Betko, J., Morvic, M., Darmo, J., Bešše, I., Hrubčín, L., Benovič, M., Pelfer, P., Gombia, E., Mosca, R., : Neutron irradiated undoped LEC SI GaAs: I. Galvanomagnetic, I-V, PC and alpha detection study. In: Gallium Arsenide Related Comp. 1995. Ed. P.G.Pelfer. Singapore: World Sci 1996. P. 152-157.

Darmo, J., Dubecký, F., Lalinský, T., : Neutron irradiated undoped LEC SI GaAs: II. C-V and deep-level state analysis. In: Gallium Arsenide Related Comp. 1995. Ed. P.G.Pelfer. Singapore: World Sci 1996. P. 158-163.

Darmo, J., Dubecký, F., Pelfer, P., : On problems of the semi-insulating GaAs based particle detector: A numerical simulation approach. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 213.

Dubecký, F., Darmo, J., Krempasky, M., Betko, J., Pikna, M., Weber, E., Pelfer, P., : On relation between detection parameters of SI GaAs particle detectors and physical properties of starting materials. In: 9th Conf. Semicond. Insul. Mater. 1996. Ed. Ch.Fontaine. IEEE Publ. 1996. P. 71.

Mudroň, J., Müllerová, J., Dubecký, F., Macko, P., Ballo, P., : Optical parameters of undoped sem-insulating GaAs. In: APCOM 1996. Eds. P.Ballo et al. Liptovsky Mikuláš: Military Acad. 1996. P. 112.

Mudroň, J., Müllerová, J., Dubecký, F., : Optical properties of semi-insulating GaAs irradiated by fast neutrons. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 245.

Dubecký, F., Darmo, J., : Semiconductor particle detectors of a new generation. In: APCOM 1996. Eds. P.Ballo et al. Liptovsky Mikuláš: Military Acad. 1996. P. 15.

Bešše, I., Dubecký, F., : Simulácia záverných V-A charakteristík SI GaAs detektorov ionizujúceho žiarenia, Senzor 2 (1996) 8.

  • 1995

Dubecký, F., Darmo, J., Lalinský, T., Hlaváč, S., Benovič, M., Pikna, M., : Detection properties of the Schottky-barrier radiation detectors based on LEC semi-insulating GaAs. In: Proc. Inter. Workshop Solid State Phys. Radioact. Irrad. Eds. P.Šutta and J. Mudroň. Liptov. Mikuláš: Military Acad. 1995. P. 113.

Mudroň, J., Müllerová, J., Šutta, P., Dubecký, F., Macko, P., Harmatha, L., : IR and VIS spectroscopy of undoped, semi-insulating GaAs irradiated by fast neutrons. In: Proc. Inter. Workshop Solid State Phys. Radioact. Irrad. Eds. P.Šutta and J. Mudroň. Liptov. Mikuláš: Military Acad. 1995. P. 131.

Krempasky, M., Sekáčová, M., Dubecký, F., Darmo, J., Senderák, R., Kostič, I., : The preparation of LEC SI GaAs radiation detectors. In: Proc. Inter. Workshop Solid State Phys. Radioact. Irrad. Eds. P.Šutta and J. Mudroň. Liptov. Mikuláš: Military Acad. 1995. P. 117.

Bešše, I., Dubecký, F., : The simulations of the reverse I-V characteristics of the Schottky barrier radiation detectors prepared on LEC semi-insulating GaAs. In: Proc. Inter. Workshop Solid State Phys. Radioact. Irrad. Eds. P.Šutta and J. Mudroň. Liptov. Mikuláš: Military Acad. 1995. P. 108.

Thurzo, I., Gmucová, K., Dubecký, F., Darmo, J., : Thermal currents from undoped semi-insulating GaAs monitored by charge deep-level transient spectroscopy Inter. J. Modern Phys. B 9 (1995) 3099-3114.

  • 1994

Dubecký, F., Darmo, J., Betko, J., Bešše, I., Hrubčín, L., Hlaváč, S., Benovič, M., : Detection properties of the first semi-insulating GaAs radiation detectors produced in Slovakia, Senzor 1 (1994) 5.

Darmo, J., Dubecký, F., Kordoš, P., Förster, A., Lüth, H., : Electrical properties and deep-level states in MBE GaAs layer grown at 250 C Materials Sci Engn. B 28 (1994) 393.

Dubecký, F., Darmo, J., Bešše, I., Pelfer, P., : I-V and C-V characteristics of the Schottky lanier radiation detectors based on LEC semiinsulating GaAs. In: Proc. Conf. on Semi-Insulating III-V Mater. Ed. M.Godlewski. Singapore: World Sci Ltd 1994. P. 183.

Dubecký, F., Darmo, J., Betko, J., Mozolová, Ž., Pelfer, P., : On the C-V analysis of Schottky barrier in undoped semi-insulating GaAs Semicond. Sci Technol. 9 (1994) 1654.

Darmo, J., Dubecký, F., : On the defect model of low temperature MBE GaAs. In: Proc. Conf. on Semi-Insulating III-V Mater. Ed. M.Godlewski. Singapore: World Sci Ltd 1994. P. 355.

  • 1993

Dubecký, F., Novák, J., Kordoš, P., : An efficient and low cost optical excitation system: Application to deep-level spectroscopy Measurement Sci Technol. 4 (1993) 538.

Dubecký, F., Novák, J., Kordoš, P., : An efficient and low cost optical excitation system: application to deep-level spectroscopy, Engn. Optics 1 (1993) 363.

Dubecký, F., Betko, J., Darmo, J., Lalinský, T., : Charakterizácia GaAs detektorov žiarenia s vysokou radiačnou odolnosťou. In: ECOMON 93. Žilina: INPEKO 1993. S. 74.

Dubecký, F., Darmo, J., Darviras, M., Förster, A., Kordoš, P., Lüth, H., : Investigation of deep-level states in bulk and low- temperature MBE semi-insulating GaAs by admitance transient spectroscopy. In: Proc. 7th Conf. III-V Semi-Insulating Materials. Ed. C.J.Miner. Bristol: IoP Publ. 1993. P. 265.

Dubecký, F., Darmo, J., Betko, J., Papaioannou, G., Ioannou, V., Baumgartner, M., : Study of deep acceptor states in undoped semi-insulating GaAs with low carbon content by transient spectroscopy techniques. Proc. 7th Conf. III-V Semi-Insulating Materials. Ed. C.J.Miner. Bristol: IoP Publ. 1993. P. 247.

  • 1991

Dubecký, F., Olejníková, B., : C-V analysis of the Schottky barrier inmsemi-insulating semiconductors J. Applied Phys. 69 (1991) 1769.

Dubecký, F., Papaioannou, G., Ioannou, V., Baumgartner, M., : Study of electron and hole emission from deep states in undoped semi-insulating GaAs by PICTS and photo-DLTS Solid State Phenomena 19 (1991) 227.

Dubecký, F., Lalinský, T., : The influence of RTA on deep states in Si-implanted GaAs MESFET structures investigated by DLTS and ODLTS Solid State Phenomena 19 (1991) 221.

  • 1990

Dubecký, F., Olejníková, B., : Determination of the deep-state concentration in semi-insulating GaAs based on new capacitance and conductans DLTS. In: Defect Control in Semicond. Ed. K.Sumino. Amsterdam: Elsevier Sci Publ. 1990. P. 1599.

Dubecký, F., : Investigation of deep states in semi-insulating GaAs by new capacitance techniques Acta Phys. Polonica A 77 (1990) 83.

  • 1989

Dubecký, F., : Characterization of deep defects in semi-insulating GaAs by capacitance and conductance DLTS with electrical and optical excitations. In: Mater. Sci Forum Defects in Semicond. 38-41 (1989) 1301.

  • 1988

Borkovskaja, O., Gassanov, L., Gruša, S., Dmitruk, N., Dubecký, F., Evstinejev, A., Konakova, R., Tchorik, J., Chasan, L., Chakimov, T., Sachovcov, V., : Strukturalnaja relaksacija v mnogoslojnych poluprovodnikovych systemach. Preprint No. 25. Kijev: IF AN ZSSR 1988.

  • 1987

Dubecký, F., Šafránková, J., Olejníková, B., Szentpali, B., : DLTS, ODLTS and MCTS study of deep traps in the VPE GaAs Schottky barriers. In: Gallium Arsenide. Proc. 2nd Conf. Phys. Technol. GaAs and other III-V Semicond. Ed. E.Lendway. Aedermannsdorf: Trans. Techn. Publ. 1987. P. 147.

  • 1986

Dubecký, F., Šafránková, J., : DLTS and ODLTS study of deep traps in GaAs Schottky barriers. In: Proc. 7th Inter. School „Defects in Crystals“ Szczyrk 1985. Ed. E.Mizera. Singapore: World Sci. Publ. Co. 1986.

Kolchanova, N., Mikhailova, M., Reschikov, M., Morvic, M., Dubecký, F., Kordoš, P., : High-sensitive GaAs photodetector in the range of 0.6+1.6.µ. In: 12th Inter. Symp. on Photon-Detectors. Ed.: J.Schanda. Budapešť: OMIKK- TECHNOINFORM 1986. P. 168.

Dubecký, F., Šafránková, J., : Využitie DLTS a ODLTS metód na vyšetrovanie hlbokých záchytných centier v GaAs Schottkyho bariérach, Elektrotechn. časopis 37 (1986) 410.

Dubecký, F., : Základy kapacitnej spektroskopie. In: Experimentální metody fyziky pevních látek 6. Charakterizace polovodičových materiálú. Praha: UK 1986. S.79.

  • 1985

Thurzo, I., Dubecký, F., : On the role of the back contacts in DLTS experiments with Schottky diodes Phys. Status Solidi A 89 (1985) 689.

Dubecký, F., Měřínsky, K., : Vyšetrovanie hlbokých záchytných centier v epitaxných vrstvách GaAs metódou DLTS, Elektrotechn. časopis 36 (1985) 594.

  • 1983

Dubecký, F., Novák, J., Kordoš, P., : Observation of deep traps in LPE(p)AlGaAs-(n)GaAs heterojunctions for avalanche photodiode applications. In: 4th Int. Conf. Deep Level Impurities in Semicond. Eger 1983. P. 90.

  • 1982

Dubecký, F., Ružinský, M., Šimko, L., : Dielektrické vlastnosti poloizolačného GaAs /Cr/. In: Zborník 5. čs. konf. GaAs a príbuzné polovodičové zlúčeniny. Bratislava: EÚ CEFV SAV 1982. S.101.

Dubecký, F., Měřínsky, K., : Vplyv magnetického poľa na diferenciálnu impedanciu štruktúr z poloizolačného GaAs (Cr), Elektrotechn. časopis 33 (1982) 81.

  • 1980

Hrivnák, L., Dubecký, F., : The temperature and compensation dependence of the threshold voltage for switching effect due to the Poole-Frenkel and screening effects with application to chromium doped GaAs structures Acta Physica Slovaca 30 (1980) 233.

  • 1979

Dubecký, F., : Určovanie merného odporu vysokoodporového Si a GaAs(Cr) z frekvenčnej závislosti impedancie, Elektrotechn. čas. 30 (1979) 420.

  • 1976

Měřínsky, K., Betko, J., Dubecký, F., : Magnetodiódový jav v kremíku, Slaboproudý obzor 37 (1976) 517.

  • 1975

Betko, J., Dubecký, F., Měřínsky, K., Červenák, J., : Analýza C-V charakteristík MOS štruktúr na kremíku s vysokým meraným odporom, Elektrotechn. čas. 26 (1975) 365.

Měřínsky, K., Betko, J., Dubecký, F., : GaAs štruktúry so záporným diferenciálnym odporom, Elektrotechn. čas. 26 (1975) 305.

Červenák, J., Betko, J., Dubecký, F., Měřínsky, K., : Vplyv efektu poľa na elektrické vlastnosti kremíkových magnetidiód, Slaboproudý obzor 36 (1975) 165.

  • 1974

Betko, J., Dubecký, F., Měřínsky, K., Červenák, J., : Meranie a analýza MOS štruktúr na kremíku s vysokým meraným odporom. In: Zborník prác z II. celoštátneho seminára „Technológia a použitie IO typu MOS“. Kočovce 1974. S. 119.