Elektrotechnický ústav SAV, v.v.i.

2025

Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., and Konstantinidis, G.: Growth and performance of n++ GaN cap layer for HEMTs applications, Mater. Sci Semicond. Process. 185 (2025) 108959.

2024

Kuzmík, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M.P., Kret, S., and Ruterana, P.: InN/InAlN heterostructures for new generation of fast electronics, J. Applied Phys. 135 (2024) 245701.

Xiao, X., Mao, Y., Meng, B., Ma, G., Hušeková, K., Egyenes, F., Rosová, A., Dobročka, E., Eliáš, P., Ťapajna, M., Gucmann, F., and Yuan, C.: Phase-dependent phonon heat transport in nanoscale gallium oxide thin films, Small 20 (2024) 2309961.

Urbanová, L., Bujdoš, M., Matulová, M., Miglierini, M., Vyhnáleková, S., Orovčík, Ľ., Machata, P., Mičušík, M., Dobročka, E., Kollár, J., Matúš, P., and Urík, M.: Investigating the sorption behavior of selenite on commercial partially oxidized magnetite nanopowder under aerobic conditions: Characterization and mechanisms, Separation Purification Technol. 348 (2024) 127688.

Šoka, M., Ušáková, M., Dosoudil, R., Jančárik, V., Ušák, E., and Dobročka, E.: Ni/Zn ratio and La substitution effect on selected structural and magnetic properties of NiZn ferrites, J. Phys.: Condens. Matter 36 (2024) 265801.

Ušáková, M., Ušák, E., Ďurišová, E., Dosoudil, R., Dobročka, E., and Šoka, M.: Polymer composites with magnetically active Eu-substituted NiZn ferrite fillers, Mater. Today Chem. 38 (2024) 102056.

Hrdá, J., Moško, M., Píš, I., Vojteková, T., Pribusová Slušná, L., Hutár, P., Precner, M., Dobročka, E., Španková, M., Hulman, M., Chromik, Š., Šiffalovič, P., Bondino, F., and Sojková, M.: Investigating structural, optical, and electron-transport properties of lithium intercalated few-layer MoS₂ films: Unraveling the influence of disorder, Applied Phys. Lett. 124 (2024) 123101. (CEMEA ITMS 313021 T081, APVV-19-0365, 21-0231, VEGA2/0068/21, 2/0140/22)

Vyhnáleková, S., Miglierini, M., Dekan, J., Bujdoš, M., Dobročka, E., Farkas, B., Matúš, P., and Urík, M.: Encapsulating magnetite nanopowder with fungal biomass: Investigating effects on chemical and mineralogical stability, Separation Purification Technol. 333 (2024) 125899.

Gucmann, F., Ťapajna, M., Hušeková, K., Dobročka, E., Rosová, A., Nádaždy, P., Eliáš, P., Egyenes, F., Hrubišák, F., Chouhan, H., Keshtkar, J., Zheng, X., Pomeroy, J.W., Kuball, M., Xiao, X., Mao, Y., Meng, B., Ma, G., and Yuan, C.: Thermal properties of Ga₂O₃ thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD, Proc. SPIE 12887 (2024) 1288705.

Gucmann, F., Hušeková, K., Rosová, A., Dobročka, E., Egyenes, F., Hrubišák, F., Keshtkar, J., Chouhan, H., Krettová, M., Eliáš, P., Nádaždy, P., Gregušová, D., Pohorelec, O., Kozak, A., and Ťapajna, M.: Gallium oxide for applications in electronics and optoelectronics. In Proc. 12^th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 13-16. ISBN 978-80-554-2109-4.

Gucmann, F., Hušeková, K., Yuan, C., Xiao, X., Mao, Y., Meng, B., Ma, G., Rosová, A., Dobročka, E., Egyenes, F., Eliáš, P., and Ťapajna, M.: Phase-dependent phonon heat transport in thin-film gallium oxide. In Proc. 12^th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 121-124. ISBN 978-80-554-2109-4.

Chouhan, H., Hušeková, K., Dobročka, E., Ťapajna, M., Keshtkar, J., Pohorelec, O., Hrubišák, F., Mikolášek, M., and Gucmann, F.: Effect of off-cut sapphire substrate on the structural and optical properties of (-201) ß-Ga₂O₃ grown by liquid-injection MOCVD. In Proc. 12^th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 117-120-28. ISBN 978-80-554-2109-4.

Chouhan, H., Egyenes, F., Rosová, A., Hušeková, K., Dobročka, E., Nádaždy, P., Ťapajna, M., Xiao, X., Mao, Y., Meng, B., Ma, G., Yuan, C., and Gucmann, Filip.: Heteroepitaxial growth of (010) β-Ga₂O₃ON sapphire substrates using α-Ga2O3 template by liquid-injection MOCVD. In Proc. 12^th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 73-76. ISBN 978-80-554-2109-4.

2023

Vojteková, T., Pribusová Slušná, L., Dobročka, E., Precner, M., Sojková, M., Hrdá, J., Gregor, M., and Hulman, M.: Fourier-transform infrared spectroscopy of MoTe₂ thin films, Phys. Status Solidi B 260 (2023) 2300250.

Šimkovic, I., Gucmann, F., Hricovíni, M., Mendichi, R., Schieroni, A.G., Piovani, D., Zappia, S., Dobročka, E., Filip, J., and Hricovíni, M.: Properties of quaternized and crosslinked carboxymethylcellulose films, Cellulose 30 (2023) 2023-2036.

Španková, M., Chromik, Š., Dobročka, E., Pribusová Slušná, L., Talacko, M., Gregor, M., Pécz, B., Koos, A., Greco, G., Panasci, S.E., Fiorenza, P., Roccaforte, F., Cordier, Y., Frayssinet, E., and Giannazzo, F.: Large-area MoS₂ films grown on sapphire and GaN substrates by pulsed laser deposition, Nanomater. 13 (2023) 2837.

Pribusová Slušná, L., Vegso, K., Dobročka, E., Vojteková, T., Nádaždy, P., Halahovets, Y., Sojková, M., Hrdá, J., Precner, M., Šiffalovič, P., Chen, Z., Huang, Y., Ražnjević, S., Zhang, Z., and Hulman, M.: Ordered growth of hexagonal and monoclinic phases of MoTe₂ on a sapphire substrate, CrystEngComm 25 (2023) 5706-5713.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga₂O₃ on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga₂O₃ power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

Ernst, D., Kolenčík, M., Šebesta, M., Durišová, Ľ., Ďúranová, H., Kšiňan, S., Tomovičová, L., Kotlárová, N., Kalúzová, M.; Černý, I., Kratošová, G., Žitniak Čurná, V., Ivanič Porhajašová, J., Babošová, M., Dobročka, E., Qian, Y., Swamiappan, S., Illa, R., Radhakrishnan, S.G., Sunil, B.R., and Ducsay, L.: Significance of phosphate nano-fertilizers foliar application: a brief real-field study of quantitative, physiological parameters, and agro-ecological diversity in sunflower, Agronomy 13 (2023) 2606.

Ernst, D., Kolenčík, M., Šebesta, M., Durišová, Ľ., Ďúranová, H., Kšiňan, S., Illa, R., Safarik, I., Kratošová, G., Žitniak Čurná, V., Ivanič Porhajašová, J., Babošová, M., Feng, H., Dobročka, E., Bujdoš, M., Zelena Pospiskova, K., Afzal, S., Singh, N.K., Swamiappan, S., and Aydın, E.: Agronomic investigation of spray dispersion of metal-based nanoparticles on sunflowers in real-world environments, Plants 12 (2023) 1789.

Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga₂O₃ films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.

Sojková, M., Píš, I., Hrdá, J., Vojteková, T., Pribusová Slušná, L., Vegso, K., Šiffalovič, P., Nádaždy, P., Dobročka, E., Krbal, M., Fons, P.J., Munnik, F., Magnano, E., Hulman, M., and Bondino, F.: Lithium-induced reorientation of few-layer MoS₂ films, Chem. Mater. 35 (2023) 6246-6257.

Kuzmík, J., Pohorelec, O., Hasenöhrl, S., Blaho, M., Stoklas, R., Dobročka, E., Rosová, A., Kučera, M., Gucmann, F., Gregušová, D., Precner, M., and Vincze, A.: Mg doping of N-polar, in-rich InAlN, Materials, 16 (2023) 2250.

Gucmann, F., Nádaždy, P., Hušeková, K., Dobročka, E., Priesol, J., Egyenes, F., Šatka, A., Rosová, A., and Ťapajna, M.: Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD, Mater. Sci Semicond. Process. 156 (2023) 107289.

Egyenes, F., Gucmann, F., Rosová, A., Dobročka, E., Hušeková, K., Hrubišák, F., Keshtkar, J., and Ťapajna, M.: Conductance anisotropy of MOCVD-grown α-Ga₂O₃ films caused by (010) β-Ga₂O₃ filament-shaped inclusions, J. Phys. D: Appl Phys. 56 (2023) 045102.

Hasenöhrl, S., Blaho, M., Dobročka, E., Gucmann, F., Kučera, M., Nádaždy, P., Stoklas, R., Rosová, A., and Kuzmík, J.: Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire, Mater. Sci Semicond. Process. 156 (2023) 107290.

Stoklas, R., Hasenőhrl, S., Dobročka, E., Gucmann, , and Kuzmík, J.: Electron transport properties in thin InN layers grown on InAlN, Mater. Sci Semicond. Process. 155 (2023) 107250.

Ťapajna, M., Keshtkar, J., Szabó, O., Shagieva, E., Hušeková, K., Dobročka, E., Fedor, J., Dérer, J., Kromka, A., and Gucmann, F.: Growth of nanocrystalline diamond on gallium oxide using various interlayers. In Proc. 11^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 28-31.

Yuan, C., Mao, Y., Meng, B., Xiao, X., Hrubišák, F., Egyenes, F., Dobročka, E., Hušeková, K., Rosová, A., Eliáš, P., Keshtkar, J., Ťapajna, M., and Gucmann, F.: Thermal properties of Ga₂O₃ films and interfaces grown by MOCVD. In Proc. 11^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 36-39.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Material properties of MOCVD-grown β- and κ-Ga₂O₃ thin films on 4H-SiC substrates. In Proc. 11^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 87-90.

Gregušová, D., Pohorelec, O., Eliáš, P., Stoklas, R., Dobročka, E., Kučera, M., Blaho, M., and Kúdela, R.: III-V semiconductor nanomembranes in device technology. In Proc. 11^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 138-141.

Ťapajna, M., Egyenes, F., Hrubišák, F., Hušeková, K., Dobročka, E., Nádaždy, P., Rosová, A., Chouhan, H., Keshtkar, J., and Gucmann., F.: Liquid-injection MOCVD-grown Ga₂O₃ on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties. In: IMFEDK 2023: Inter. Meeting for Future of Electron Devices, Kansai. – IEEE, 2023, p. IN10. ISBN 979-8-3503-9378-1.

2022

Rosová, A., Dobročka, E., Eliáš, P., Hasenöhrl, S., Kučera, M., Gucmann, F., and Kuzmík, J.: In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD, Nanomater. 12 (2022) 3496.

Kolenčík, M., Urík, M., Lesňák, M., Čech Barabaszová, K., Bujdoš, M., Šebesta, M., Dobročka, E., Aydın, E., Duborská, E., Ernst, D., Juriga, M., Chakvavarthi, J., Qian, Y., Feng, H., Kratošová, G., Sunil, B.R., and Illa, R.: Effect of AC/DC electrical fields on ZnO nanoparticles kinetics, Acta fytotechn. zootechn. 25 (2022) 324–332.

Kozak, A., Sojková, M., Gucmann, F., Bodík, M., Vegso, K., Dobročka, E., Píš, I., Bondino, F., Hulman, M., Šiffalovič, P., and Ťapajna, M.: Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe₂, Applied Surface Sci 605 (2022) 154883.

Šimonová, Z., Porubová, L., Verner, A., Gabor, R., Vilamová, Z., Dobročka, E., Cieslar, M., Krbečková, V., Dědková, K.P., Svoboda, L., Bednář, J., Dvorský, R., and Seidlerová, J.: Simple fabrication of polycaprolactone-co-lactide membrane with silver nanowires: synthesis, characterization and cytotoxicity studies, Fibers Polymers 23 (2022) 2983-2993.

Šimonová, Z., Krbečková, V., Vilamová, Z., Dobročka, E., Klejdus, B., Cieslar, M., Svoboda, L., Dvorský, R., and Seidlerová, J.: The effects of nature-inspired synthesis on silver nanoparticle generation, ACS Omega 7 (2022) 4850–4858.

Dosoudil, R., Šoka, M., Ušáková, M., Ušák, E., Jančárik, V., and Dobročka, E.: Magnetic and structural sroperties analysis of Cerium substituted Nickel–Zinc ferrites, IEEE Trans. Magn. 58 (2022) 2200305.

Hrubišák, F., Hušeková, K., Egyenes, F., Gucmann, F., Dobročka, E., Keshtkar, J., and Ťapajna, M.: Effects of repeated annealing in different atmospheres on surface morphology of ε-/κ-Ga₂O₃ grown on c-plane sapphire using LI-MOCVD method. In: ELITECH´22: 24^th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Keshtkar, J., Gucmann, F., Hotový, I., Dobročka, E., Egyenes, F., and Ťapajna, M.: NiO thin films for solar-blind photodetectors:structure and electrical properties. In: ELITECH´22: 24^th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Hudec, B., Vanko, G., Precner, M., Dobročka, E., Seifertová, A., Fedor, J., Tóbik, J., and Fröhlich, K.: Piezoelectric thin film pressure sensor made by atomic layer deposition of 002-oriented ZnO on Si₃N₄ membrane. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 199-202.

Hrubišák, F., Hušeková, K., Egyenes, F., Rosová, A., Kubranská, A., Dobročka, E., Nádaždy, P., Keshtar, J., Gucmann, F., and Ťapajna, M.: Structural and electrical properties of Ga₂O₃ transistors grown on 4H-SiC substrates. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 115-118.

Egyenes, F., Gucmann, F., Dobročka, E., Mikolášek, M., Hušeková, K., and Ťapajna, M.: Transport properties of Si-doped ẞ-Ga₂O₃ grown by liquid-injection MOCVD. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 119-122.

Horský, M., Nádaždy, P., Dobročka, E., Gregušová, D., Seifertová, A., Dérer, J., Fedor, J., Ščepka, T., and Hudec, B.: Electrical properties of Pt/TiO₂/TiN structures grown by atomic layer deposition using TTIP and water. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 37-40.

Hrdá, J., Vojteková, T., Pribusová-Slušná, L., Dobročka, E., Hulman, M., Píš, I., and Sojková, M.: Influence of Li-doping on the structural properties of thin-layer MOS₂ films. In Proc. 10^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 85-88.

Hrubišák, F., Egyenes, F., Dobročka, E., Gucmann, F., Hušeková, K., Keshtkar, J., and Ťapajna, M.: Growth and properties of Ga₂O₃ on 4H-SiC using liquid-injection MOCVD. In Proc. 10^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 47-50.

Keshtkar, J., Hotovy, I., Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes, F., Mikolášek, M., and Ťapajna, M.: NiO thin films for solar-blind photodetectors: structure and electrical properties. In Proc. 10^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 113-116.

Chromik, Š., Španková, M., Rosová, A., Dobročka, E., Gregor, M., Vojteková, T., Cordier, Y., Pécz, B., and Giannazzo, F.: Structural properties of MoS2 and WS2 two-dimensional systems prepared by PLD method on some specific substrates. In: Proc. 12^th Inter. Conf. Solid State Surfaces Interfaces Conf. – SSSI 2022. Extend. Abstract Book. Ed. B. Brunner. Bratislava: Comenius Univ. 2022, p. 20-21. ISBN 978-80-223-5494-3.

Španková, M., Dobročka, E., Pribusová-Slušná, L., Gregor, M., Pécz, B., Koos, A., Fiorenza, P., Giannazzo, F., Cordier, Y., Frayssinet, E., and Chromik, Š.: Structural properties of few monolayer thick MoS₂ films prepared on GaN and sapphire substrates. In: Proc. 12^th Inter. Conf. Solid State Surfaces Interfaces Conf. – SSSI 2022. Extend. Abstract Book. Ed. B. Brunner. Bratislava: Comenius Univ. 2022, p. 55-56. ISBN 978-80-223-5494-3.

2021

Dobročka, E., Španková, M., Sojková, M., and Chromik, Š.: Texture of YBCO layer grown on GaN/c-sapphire substrates, Applied Surface Sci 543 (2021) 148718.

Pribusová Slušná, L., Vojteková, T., Hrdá, J., Pálková, H., Šiffalovič, P., Sojková, M., Vegso, K., Hutár, P., Dobročka, E., Varga, M., and Hulman, M.: Optical characterisation of few-layer PtSe₂ nanosheet films, ACS Omega 6 (2021) 35398-35403.

Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

Kundrata, I., Mošková, A., Moško, M., Mičušík, M., Dobročka, E., and Fröhlich, K.: Atomic layer deposition of lithium metaphosphate from H₃PO₄ and P₄O₁₀ facilitated via direct liquid injection: Experiment and theory, J. Vacuum Sci Technol. A 39 (2021) 062407.

Sahoo, P.P., Mikolášek, M., Hušeková, K., Dobročka, E., Šoltýs, J., Ondrejka, P., Kemény, M., Harmatha, L., Mičušík, M., and Fröhlich, K.: Si-based metal-insulator-semiconductor structures with RuO₂-(IrO₂) films for photoelectrochemical water oxidation, ACS Applied Energy Mater. 4 (2021) 11162-11172.

Šimkovic, I., Gucmann, F., Mendichi, R., Schieroni, A.G., Piovani, D., Dobročka, E., and Hricovíni, M.: Extraction and characterization of polysaccharide films prepared from Furcellaria lumbricalis and Gigartina skottsbergii seaweeds, Cellulose 28 (2021) 9567–9588.

Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M., Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

Gucmann, F., Kučera, M., Hasenőhrl, S., Eliáš, P., Rosová, A., Dobročka, E., Stoklas, R., and Kuzmík, J.: InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures, Semicond. Sci Technol. 36 (2021) 075025.

Gregušová, D., Dobročka, E., Eliáš, P., Stoklas, R., Blaho, M., Pohorelec, O., Haščík, Š., Kučera, M., and Kúdela, R.: GaAs nanomembranes in the high electron mobility transistor technology, Materials 14 (2021) 3461.

Hrdá, J., Tašková, V., Vojteková, T., Pribusová Slušná, L., Dobročka, E., Píš, I., Bondino, F., Hulman, M., and Sojková, M.: Tuning the charge carrier mobility in few-layer PtSe₂ films by Se: Pt ratio, RSC Adv. 11 (2021) 27292.

Sojková, M., Hrdá, J., Volkov, S., Vegso, K., Shaji, A., Vojteková, T., Pribusová Slušná, L., Gál, N., Dobročka, E., Šiffalovič, P., Roch, T., Gregor, M., and Hulman, M.: Growth of PtSe₂ few-layer films on NbN superconducting substrate, Applied Phys. Lett. 119 (2021) 013101.

Kováč, P., Hušek, I., Melišek, T., Rosová, A., and Dobročka, E.: Effect of grain size selection in ex-situ made MgB₂ wires, Physica C 583 (2021) 1353826.

Rosová, A., Maťko, I., and Dobročka, E.: BaZrO₃ dopant interactions during MgB₂ wire formation by modifed internal magnesium difusion process, Applied Phys. A 127 (2021) 152.

Ábel, M., Záchenská, J., Dobročka, E., and Zemanová, M.: Electrocatalytic properties of pulse plated Ni-W alloy coatings in alkaline electrolytes, Trans. IMF 99 (2021) 23-28.

Španková, M., Sojková, M., Dobročka, E., Hutár, P., Bodík, M., Munnik, F., Hulman, M., and Chromik, Š.: Influence of precursor thin-film quality on the structural properties of large-area MoS₂ films grown by sulfurization of MoO₃ on c-sapphire, Applied Surface Sci 540 (2021) 148240.

Sojková, M., Dobročka, E., Hutár, P., Tašková, V., Pribusová Slušná, L., Stoklas, R., Píš, I., Bondino, F., Munnik, F., and Hulman, M.: High carrier mobility epitaxially aligned PtSe₂ films grown by one-zone selenization, Applied Surface Sci 538 (2021) 147936.

Egyenes-Pörsök, F., Hušeková, K., Dobročka, E., Gucmann, F., and Ťapajna, M.: Optimization of Ohmic contact formation for αlpha-Ga₂O₃ epitaxial layers grown by MOCVD. In Proc. 9^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 91-94.

Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes-Pörsök, F., and Ťapajna, M.: Growth and properties of ε-Ga₂O₃ on sapphire substrates. In Proc. 9^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 63-66.

Hrdá, J., Tašková, V., Vojteková, T., Pribusová Slušná, L., Dobročka, E., Píš, I.. Bondino, F., Hulman, M., and Sojková, M.: Selenium content influences the charge carrier mobility in few-layer PtSe₂ films. In Proc. 9^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 103-106.

Sojková, M., Hrdá, J., Volkov, S., Végso, K., Shaji, A., Vojteková, T., Pribusová Slušná, L., Gál, N., Dobročka, E., Šiffalovič, P., Roch, T., Gregor, M., and Hulman, M.: PtSe₂ few-layer films grown on NbN superconducting substrate. In Proc. 9^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 9-12.

Petrisková, P., Monfort, O., Satrapinskyy, L., Dobročka, E., Plecenik, T., Plesch, G., Papšík, R., Bermejo, R., and Lenčéš, Z.: Preparation and photocatalytic activity of TiO₂ nanotube arrays prepared on transparent spinel substrate, Ceramics Inter. 47 (2021) 12970-12980. (Not IEE SAS)

2020

Hasenöhrl, S., Dobročka, E., Stoklas, R., Gucmann, F., Rosová, A., and Kuzmík, J.: Growth and Properties of N-polar InN/InAlN Heterostructures, Phys. Stat. sol (a) 217 (2020) 2000197.

Farkas, B., Kolenčík, M., Hain, M., Dobročka, E., Kratošová, G., Bujdoš, M., Feng, H., Deng, Y., Yu, Q., Illa, R., Sunil, B.R., Kim, H., Matúš, P., and Urík, M.: Aspergillus niger decreases bioavailability of arsenic(V) via biotransformation of manganese oxide into biogenic oxalate minerals, J. Fungi 6 (2020) 270.

Duborská, E., Szabó, K., Bujdoš, M., Vojtková, H., Littera, P., Dobročka, E., Kim, H., and Urík, M.: Assessment of aspergillus niger strain’s suitability for arsenate-contaminated water treatment and adsorbent recycling via bioextraction in a laboratory-scale experiment, Microorgan. 8 (2020) 1668.

Egyenes-Pörsök, E., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.: Growth of α- and β-Ga₂O₃ epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002.

Nemček, L., Šebesta, M., Urík, M., Bujdoš, M., Dobročka, E., and Vávra, I.: Impact of bulk ZnO, ZnO nanoparticles and dissolved Zn on early growth stages of barley—a pot experiment, Plants 9 (2020) 1365.

Šebesta, M., Urík, M., Bujdoš, M., Kolenčík, M., Vávra, I., Dobročka, E., Kim, H., and Matúš, P.: Fungus aspergillus niger processes exogenous zinc nanoparticles into a biogenic oxalate mineral, J. Fungi 6 (2020) 210.

Kolenčík, M., Ernst, D., Urík, M., Ďurišová, Ľ., Bujdoš, M., Šebesta, M., Dobročka, E., Kšiňan, S., Illa, R., Qian, Y., Feng, H., Černý, I., Holišová, V., and Kratošová, G.: Foliar application of low concentrations of titanium dioxide and zinc oxide nanoparticles to the common sunflower under field conditions, Nanomater. 10 (2020) 1619.

Kováčová, Z., Orovčík, Ľ., Sedláček, J., Bača, Ľ., Dobročka, E., Kitzmantel, M., and Neubauer, E.: The effect of YB₄ addition in ZrB₂-SiC composites on the mechanical properties and oxidation performance tested up to 2000 °C, J. Europ. Cerami. Soc 40 (2020) 3829-3843.

Španková, M., Dobročka, E., Štrbík, V., Chromik, Š., Gál, N., Nedelko, N., Ślawska-Waniewska, A., and Gierlowski, P.: Structural characterization of epitaxial LSMO thin films grown on LSAT substrates, Acta Phys. Polonica A 137 (2020) 744-746.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

Hronec, M., Fulajtárová, K., Horváth, B., Liptaj, T., and Dobročka, E.: A facile conversion of furfural to novel tetrahydrofurfuryl hemiacetals, Applied Catal. A 594 (2020) 117471.

Zaytseva, I., Minikayev, R., Dobročka, E., Španková, M., Bruyant, N., and Cieplak, M.Z.: Structural properties and magnetoresistance of La_1.952Sr_0,048CuO₄ thin films, J. Applied Phys. 127 (2020) 073901.

Šebesta, M., Nemček, L., Urík, M., Kolenčík, M., Bujdoš, M., Vávra, I., Dobročka, E., and Matúš, P.: Partitioning and stability of ionic, nano- and microsized zinc in natural, Sci Total Environ. 700 (2020) 134445.

Chauhan, P., Hasenöhrl, S., Vančo, Ľ., Šiffalovič, P., Dobročka, E., Machajdík, D., Rosová, A., Gucmann, F., Kováč, J.jr., Maťko, I., Kuball, M., and Kuzmík, J.: A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation, CrystEngComm 22 (2020) 130-141.

Sojková, M., Dobročka, E., Hutár, P., Tašková, V., Pribusová Slušná, L., Stoklas, R., Píš, I., Bondino, F., Hulman, M., and Gregušová, D.: Epitaxially aligned PtSe₂ films grown by one-zone selenization. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 6-9.

Kučera, M., Hasenőhrl, S., Dobročka, E., Rosová, A., Eliáš, P., Gucmann, F., and Kuzmík, J.: Morphology, crystalline quality, and optical properties of MOCVDgrown InN/InAlN heterostructures. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 131-134.

2019

Hutár, P., Španková, M., Sojková, M., Dobročka, E., Végso, K., Hagara, J., Halahovets, Y., Majková, E., Šiffalovič, P., and Hulman, M.: Highly crystalline MoS₂ thin films fabricated by sulfurization, Phys. Status Solidi B 256 (2019) 1900342.

Kolenčík, M., Ernst, D., Komár, M., Urík, M., Šebesta, M., Dobročka, E., Černý, I., Illa, R., Kanike, R., Qian, Y., Feng, H., Orlová, D., and Kratošová, G.: Effect of foliar spray application of zinc oxide nanoparticles on quantitative, nutritional, and physiological parameters of foxtail millet (Setaria italica L.) under field conditions, Nanomaterials 9 (2019) 1559.

Vilamová, Z., Konvičková, Z., Mikeš, P., Holišová, V., Mančík, P., Dobročka, E., Kratošová, G., and Seidlerová, J.: Ag-AgCl nanoparticles fixation on electrospun PVA fibres: technological concept and progress, Sci Rep. 9 (2019) 15520.

Dobročka, E.: X-ray diffraction analysis of epitaxial layers with depth-dependent composition, Mater. Struct. 26 (2019) 148-150.

Branická, E., Ušáková, M., Ušák, E., Šoka, M., and Dobročka, E.: Effect of Eu substitution on magnetic behavior of spinel nickel ferrites, AIP Conf. Proc. 2131 (2019) 020003.

Zajkoska, S.M., Dobročka, E., Hansal, S., Mann, R., Hansal, W.E.G., and Kautek, W.: Tartrate-based electrolyte for electrodeposition of Fe–Sn alloys, Coatings 9 (2019) 313.

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E., Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grows thin MoS₂ layers on polycrystalline CVD diamond, Sci Rep. 9 (2019) 2001.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

Šebesta, M., Kolenčík, M., Urík, M., Bujdoš, M., Vávra, I., Dobročka, E., Smilek, J., Kalina, M., Diviš, P., Pavúk, M., Miglierini, M., Kratošová, G., and Matúš, P.: Increased colloidal stability and decreased solubility-sol-gel synthesis of zinc oxide nanoparticles with humanic acids, J. Nanosci Nanotechnol. 19 (2019) 3024-3030.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík, J.: Effect of temperature and carrier gas on the properties of thick In_xAl_1-xN layer, Applied Surface Sci 470 (2019) 1-7.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E., Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grown thin MOS2 layers on polycrystalline CVD diamond. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 281-284.

2018

Dobročka, E., Hasenöhrl, S., Chauhan, P., and Kuzmík, J.: Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems, Applied Surface Sci 461 (2018) 23-32.

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlO_x layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

Chromik, Š., Španková, M., Talacko, M., Dobročka, E., and Lalinský, T.: Some peculiarities at preparation of Bi₄Ti₃O₁₂ films for bolometric applications, Applied Surface Sci 461 (2018) 39-43.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

Neilinger, P., Ščepka, T., Mruczkiewicz, M., Dérer, J., Manca, D., Dobročka, E., Samardak, A.S., Grajcar, M., and Cambel, V.: Ferromagnetic resonance study of sputtered Pt/Co/Pt multilayers, Applied Surface Sci 461 (2018) 202-205.

Rosová, A., Hušek, I., Kulich, M., Melišek, T., Kováč, P., Dobročka, E., Kopera, L., Scheiter, J., and Haessler, W.: Microstructure of undoped and C-doped MgB₂ wires prepared by an internal magnesium diffusion technique using different B powders, J. Alloys Comp. 764 (2018) 437e445.

Ušák, E., Ušáková, M., Dosoudil, R., Šoka, M., and Dobročka, E.: Influence of iron substitution by selected rare-earth ions on the properties of NiZn ferrite fillers and PVC magneto-polymer composites, AIP Adv. 8 (2018) 047805.

Zápražný, Z., Korytár, D., Jergel, M., Halahovets, Yu., Ferrari, C., Frigeri, C., Dobročka, E., Keckes, J., and Hagara, J.: Towards x-ray crystal channel-cut monochromators prepared by nano-machining technique, Mater. Struct. 25 (2018) 75-78.

2017

Druga, J., Kašiarová, M., Dobročka, E., Zemanová, M., : Corrosion and tribological properties of nanocrystalline pulse electrodeposited Ni-W alloy coatings,. Trans. IMF 95 (2017) 39-45.

Dobročka, E.: Evaluation of threading dislocation density in III-nitride epitaxial layers, Mater. Struct. 24 (2017) 27-29.

Zápražný, Z., Korytár, D., Halahovets, Yu., Jergel, M., Ferrari, C., Hagara, J., and Dobročka, E.: Diffraction surfaces in x-ray crystal monochromators prepared by nano-machining technique, Mater. Struct. 24 (2017) 25-26.

Soták, T., Hronec, M., Gál, M., Dobročka, E., and Škriniarová, J.: Aqueous-phase oxidation of furfural to mateic acid catalyzed by copper phosphate catalysts, Catalysis Letters 147 (2017) 2714-2723.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103.

Brunner, B., Rosová, A., Kováč, P., Reissner, M., Dobročka, E., : Effect of Dy2O3 doping on phase formation and properties of MgB2 wires made by the modified internal magnesium diffusion process. Supercond. Sci Technol. 30 (2017) 025004.

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, Ľ., Vogrinčič, P., and Vincze, A.: Ir/Al multilayer gates for high temperature operated AlGaN/GaN HEMTs, Phys. Status Solidi A 214 (2017) 1700691.

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165.

Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E., Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.

Chromik, Š., Sojková, M., Vretenár, V., Rosová, A., Dobročka, E., Hulman, M., : Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition. Applied Surface Sci 395 (2017) 232-236.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107.

Sojková, M., Chromik, Š., Rosová, A., Dobročka, E., Hutár, P., Machajdík, D., Kobzev, A., Hulman, M., : MoS2 thin films prepared by sulfurization Proc. SPIE 10354 (2017) 103541K-1.

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Micusik, M., Gregušová, D., : Optimization of UV-assisted wet oxidation of GaAs,. J. Vacuum Sci Technol. B 35 (2017) 01A116.

Kořenková, L., Šebesta, M., Urík, M., Kolenčík, M., Kratošová, G., Bujdoš, M., Vávra, I., Dobročka, E., :Physiological response of culture media-grown barley (Hordeum vulgare L.) to titanium oxide nanoparticles,. Acta Agricult. Scand. B 67 (2017) 285-291.

Brunner, B., Kováč, P., Rosová, A., Reissner, M., Dobročka, E., : Properties of MgB2 wires doped with BaZrO3 nanopowder made by a modified internal magnesium diffusion process. Supercond. Sci Technol. 30 (2017) 115003.

Novák, P., Dobročka, E., : Residual stress and optimization of lattice parameters in strongly textured ZnO thin films In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 276-279.

Dobročka, E., Novák, P., Búc, D., Harmatha, L., Murín, J., : X-ray diffraction analysis of residual stresses in textured ZnO thin films. Applied Surface Sci 395 (2017) 16-23.

Kováč, J., Florovič, M., Vincze, A., Dobročka, E., Novotný, I., Mikolášek, M., and Škriniarová, J.: Fabrication and characterization of Si/SiO₂/TiO₂ /ZnO heterostructures from sputtered and oxidized Ti-film, J. Electr. Engn. 68 (2017) 58-61.

2016

Hronec, M., Fulajtárová, K., Vávra, I., Soták, T., Dobročka, E., Micusik, M., : Carbon supported Pd-Cu catalysts for highly selective rearrangement of furfural to cyclopentanone. Applied Catal. B 181 (2016) 210-219.

Sojková, M., Štrbik, V., Nurgaliev, T., Chromik, Š., Dobročka, E., Španková, M., Blagoev, B., Gál, N., :Fabrication of hybrid thin film structures from HTS and CMR materials. J. Phys.:Conf. Ser. 700 (2016) 012022.

Kulich, M., Kováč, P., Hain, M., Rosová, A., Dobročka, E., : High density and connectivity of a MgB2 filament made using the internal magnesium diffusion technique. Supercond. Sci Technol. 29 (2016) 035004.

Španková, M., Štrbik, V., Dobročka, E., Chromik, Š., Sojková, M., Zheng, D., Li, J., : Characterization of epitaxial LSMO thin films with high Curie temperature prepared on different substrates. Vacuum 126 (2016) 24-28.

Zemanová, M., Druga, J., Szúnyogh, J., Dobročka, E., : Ni-W alloys for hydrogen evolution. Mater. Sci Forum 844 (2016) 167-171.

Soták, T., Hronec, M., Vávra, I., Dobročka, E., : Sputtering processed tungsten catalysts for aqueous phase reforming of cellulose. Inter. J. Hydrogen Energy 41 (2016) 21936-21944.

2015

Fulajtárová, K., Soták, T., Hronec, M., Vávra, I., Dobročka, E., Omastová, M., : Aqueous phase hydrogenation of furfural to furfural alcohol over Pd-Cu catalysts. Applied Catal. A 502 (2015) 78-85.

Zápražný, Z., Korytár, D., Jergel, M., Šiffalovič, P., Dobročka, E., Vagovič, P., Ferrari, C., Mikulík, P., Demydenko, M., Mikloška, M., : Calculations and surface quality measurements of high-asymmetry angle x-ray crystal monochromators for advanced x-ray imaging and metrological applications. Optical Engn. 54 (2015) 035101.

Novák, P., Dobročka, E., Slugeň, V., Gokhman, A., : Effect of irradiation on the structural propeties of ironchromium alloys investigated by GIXRD In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 277-281.

Šustek, M., Horváth, B., Vávra, I., Gál, M., Dobročka, E., Hronec, M., : Effects of structures of molybdenum catalysts on selectivity in gas-phase propylene oxidation. Chinese J. Catal. 36 (2015) 1900-1909.

Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A., : Elimination of surface band bending on N-polar InN with thin GaN capping,. Applied Phys. Lett. 107 (2015) 191605.

Gucmann, F., Kúdela, R., Dobročka, E., Mičušík, M., Rosová, A., Novák, J., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide In: 18. Škola vákuovej techniky: Nanosvet s vákuom. Bratislava: SVS, 2015. ISBN 978-80-971179-6-2. S. 27-30.

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap. J. Vacuum Sci Technol. B 33 (2015) 01A111.

Oriňaková, R., Oriňak, A., Kupková, M., Hrubovčáková, M., Markušová-Bučková, L., Giretová, M., Medvecký, Ľ., Dobročka, E., Petruš, O., Kaľavský, F., : In vitro degradation and cytotoxicity evaluation of iron biomaterials with hydroxyapatite film. Inter. J. Electrochem. Sci 10 (2015) 8158-8174.

Brndiarová, J., Fröhlich, K., Hulman, M., Rosová, A., Dobročka, E., Kahro, T., Aarik, J., : Integration of atomic layer deposited Al2O3 dielectrics with graphene In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 169-174.

Kováč, P., Hušek, I., Rosová, A., Kulich, M., Melišek, T., Kopera, Ľ., Dobročka, E., : Interface MgB2 layers made by magnesium diffusion into boron. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 84.

Novák, P., Gokhman, A., Dobročka, E., Bokor, J., Pecko, S., : Investigation of helium implanted Fe-Cr alloys by means of x-ray diffraction and positron annihilation spectroscopy,. J. Electr. Engn. 66 (2015) 334-338.

Lalinský, T., Vanko, G., Dobročka, E., Vincze, A., Dzuba, J., Babchenko, O., : Ir/Al multilayer systems for high temperature stable gates of AlGaN/GaN HEMTs. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 91-92.

Šoka, M., Ušáková, M., Dosoudil, R., Ušák, E., Dobročka, E., : Magnetic and structural properties of nickel zinc ferrites doped with yttrium. IEEE Trans. Magn. 51 (2015) 2000504.

Jakubisová, E., Višnovský, Š., Široký, P., Hrabovský, D., Pištora, J., Vávra, I., Dobročka, E., Krišťan, P., Štěpánková, H., Harward, I., Celinski, Z., : Magneto-optical studies of BaFe12O19 films grown by metallo-organic decomposition. Optical Mater. Express 5 (2015) 1323-1330.

Dobročka, E., Novák, P., Búc, D., : Measuring of residual stresses in strongly textured thin films Mater. Struct. 22 (2015) 171-172.

Rosová, A., Kováč, P., Hušek, I., Brunner, B., Dobročka, E., : Microstructure of MgB2 superconducting wire prepared by internal magnesium diffusion and in-situ powder-in-tube processes – Secondary phase intergrain nanolayers as an oxygen content indicator. Physica C 516 (2015) 1-9.

Rosová, A., Hušek, I., Kováč, P., Dobročka, E., Melišek, T., : Microstructure of MgB2 superconducting wire prepared by internal magnesium diffusion process. J. Alloys Comp. 619 (2015) 726-732.

Sojková, M., Hulman, M., Chromik, Š., Micusik, M., Dobročka, E., Gaži, Š., Španková, M., : MoS2 thin film fabrication. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 129.

Filo, J., Mišicák, R., Cigáň, M., Weis, M., Jakabovič, J., Gmucová, K., Pavúk, M., Dobročka, E., Putala, M., :Oligothiophenes with the naphthalene core for organic thin-film transistors: variation in positions of bithiophenyl attachment to the naphthalene. Synthetic Metals 202 (2015) 73-81.

Sojková, M., Štrbik, V., Chromik, Š., Liday, J., Vogrinčič, P., Dobročka, E., Španková, M., Talacko, M., Gaži, Š., : Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication. Vacuum 119 (2015) 250-255.

Španková, M., Štrbik, V., Dobročka, E., Chromik, Š., Sojková, M., : Structural characterization of epitaxial LSMO thin films with high Curie temperature grown on LSAT substrates. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 154-155.

Španková, M., Rosová, A., Dobročka, E., Chromik, Š., Vávra, I., Štrbik, V., Machajdík, D., Kobzev, A., Sojková, M., : Structural properties of epitaxial La0.67Sr0.33MnO3 films with increased temperature of metal-insulator transition grown on MgO substrates. Thin Solid Films 583 (2015) 19-24.

Štrbik, V., Beňačka, Š., Gaži, Š., Španková, M., Šmatko, V., Chromik, Š., Gál, N., Sojková, M., Pisarčík, M.,Dobročka, E., Machajdík, D., : Superconductor-ferromagnet-superconductor nanojunctions. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 156-157.

Kúdela, R., Gregušová, D., Šoltýs, J., Kučera, M., Dobročka, E., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 87-88.

Dobročka, E., Novák, P., Búc, D., Harmatha, L., Murín, J., : X-ray diffraction analysis of residual stresses in textured ZnO thin films. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 38-41.

2014

Blagoev, B., Gostev, I., Nurgaliev, T., Štrbik, V., Bineva, I., Uspenskaya, L., Mateev, E., Neshkov, L.,Dobročka, E., Chromik, Š., : Deposition and characterization of thin HTS and magnetic perovskite films. J. Phys.: Conf. Ser. 514 (2014) 012041.

Novák, P., Dobročka, E., Búc, D., Kováč, J., : Determination of residual stress in thin film by GIXRD. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 300-303.

Grančič, B., Mikula, M., Roch, T., Zeman, P., Satrapinskyy, L., Gregor, M., Plecenik, T., Dobročka, E., Hájovská, Z., Mičušík, M., Šatka, A., Zahoran, M., Plecenik, A., Kúš, P., : Effect of Si addition on mechanical properties and high temperature oxidation resistance of Ti-B-Si hard coatings. Surface Coating Technol. 240 (2014) 48-54.

Štrbik, V., Reiffers, M., Dobročka, E., Šoltýs, J., Španková, M., Chromik, Š., : Epitaxial LSMO thin films with correlation of electrical and magnetic properties above 400K. Applied Surface Sci 312 (2014) 212-215.

Horváth, B., Šustek, M., Škriniarová, J., Omastová, M., Dobročka, E., Hronec, M., : Gas phase hydroxylation of benzene with air-ammonia mixture over copper-based phosphate catalysts. Applied Catal. A 481 (2014) 71-78.

Španková, M., Chromik, Š., Dobročka, E., Štrbik, V., Sojková, M., : LSMO films with increased temperature of MI transition. Acta Phys. Polonica A 126 (2014) 212-213.

Chromik, Š., Štrbik, V., Dobročka, E., Roch, T., Rosová, A., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Ralbovský, M., Choleva, P., : LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers. Applied Surface Sci 312 (2014) 30-33.

Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J., Lee, W., Song, S., Paskaleva, A., Bauer, A., Frey, L., Fröhlich, K., Aarik, J., Hwang, C., : Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes. ACS Applied Mater. Interfaces 6 (2014) 2486-2492.

Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Vojs, M., Vincze, A., Dobročka, E., : Processing technology of MEMS sensors using III-N material system In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 39-43.

Búc, D., Kováč, J., Kutiš, V., Murín, J., Čaplovičová, M., Škriniarová, J., Novák, P., Novák, J., Hasenöhrl, S.,Dobročka, E., : Residual stress in RF magnetron deposited ZnO/GaP thin films and nanowires In: Proc. of the jointly organized WCCM XI, ECCM V, ECFD VI. Eds. E. Oñate et al. Barcelona: CIMNE 2014. ISBN: 978-84-942844-7-2. P. 2846-2856.

Jančovič, P., Hudec, B., Dobročka, E., Dérer, J., Fedor, J., Fröhlich, K., : Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures. Applied Surface Sci 312 (2014) 112-116.

Hudec, B., Paskaleva, A., Jančovič, P., Dérer, J., Fedor, J., Rosová, A., Dobročka, E., Fröhlich, K., :Resistiveswitching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface. Thin Solid Films 563 (2014) 10-14.

Zápražný, Z., Korytár, D., Šiffalovič, P., Jergel, M., Demydenko, M., Mikulík, P., Dobročka, E., Ferrari, C., Vagovič, P., Mikloška, M., : Simulations and surface quality testing of high asymetry angle x-ray crystal monochromators for advanced x-ray imaging applications. Proc. SPIE 9207 (2014) 92070Y.

Červeň, I., Dobročka, E., Fejdi, P., Vančová, I., : Slovenská kryštalografická terminológia. Bratislava: Veda 2014. ISBN: 978-80-224-1361-9. 208 s.

Ušák, E., Šoka, M., Ušáková, M., Dobročka, E., : Structural and magnetic properties of nano-sized NiZn ferrites. Acta Phys. Polonica A 126 (2014) 68-69.

Trgala, M., Žemlička, M., Neilinger, P., Rehak, M., Leporis, M., Gaži, Š., Greguš, J., Plecenik, T., Roch, T.,Dobročka, E., Grajcar, M., : Superconducting MoC thin films with enhanced sheet resistance. Applied Surface Sci 312 (2014) 216-219.

2013

Vanko, G., Lalinský, T., Ižák, T., Vojs, M., Vincze, A., Dobročka, E., Vallo, M., Dzuba, J., Rýger, I., Kromka, A., : AlGaN/GaN high electron mobility transistors for high temperatures In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 55-59.

Novák, P., Dobročka, E., Vallo, M., Lalinský, T., Ballo, P., : Depth distribution of chemical phase concentration determined by grazing incidence X-ray diffraction. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 96-98.

Horváth, B., Hronec, M., Vávra, I., Šustek, M., Križanová, Z., Dérer, J., Dobročka, E., : Direct gas-phase epoxidation of propylene over nanostructured molybdenum oxide film catalysts,. Catal. Comm. 34 (2013) 16-21.

Dobročka, E., Novák, P., Vallo, M., Lalinský, T., : Grazing incidence X-ray diffraction: study of depth distribution of chemical phase concentration. Mater. Struct. 20 (2013) 61-62.

Vallo, M., Lalinský, T., Dobročka, E., Vanko, G., Vincze, A., Rýger, I., : Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT,. Applied Surface Sci 267 (2013) 159-163.

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167.

Korytár, D., Vagovič, P., Végsö, K., Šiffalovič, P., Dobročka, E., Jark, W., Áč, V., Zápražný, Z., Ferrari, C., Cecilia, A., Hamann, E., Mikulík, P., Baumbach, T., Fiederle, M., Jergel, M., : Potential use of V-channel Ge(220) monochromators in X-ray metrology and imaging. J. Applied Crystall. 46 (2013) 945-952.

Písečný, P., Chlpík, J., Chovan, J., Haško, D., Vincze, A., Hronec, P., Dobročka, E., Uherek, F., : Preparation and characterization of materials layers for photonic structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 258-261.

Lobotka, P., Radnóczi, G., Czigány, Z., Vávra, I., Držík, M., Micusik, M., Dobročka, E., Kunzo, P., :Preparation of nickel, nickel-iron, and silver-copper nanoparticles in ionic liquids.. In: IEEE Proc. 17th Inter. Conf. on Solid-State Sensors, Actuators and Microsyst. – Transducers 2013 & EUROSENSORS XXVII. IEEE 2013. ISBN: 978-1-4673-5981-8. P. 2021-2024.

Korytár, D., Vagovič, P., Ferrari, C., Šiffalovič, P., Jergel, M., Dobročka, E., Zápražný, Z., Áč, V., Mikulík, P., : Process-induced inhomogeneities in higher asymmetry angle x-ray monochromators. Proc. SPIE 8848 (2013) 8848-28.

Kováč, P., Hušek, I., Kopera, Ľ., Melišek, T., Rosová, A., Dobročka, E., : Properties of in situ made MgB2 in Nb or Ti sheath. Supercond. Sci Technol. 26 (2013) 025007.

Chromik, Š., Štrbik, V., Dobročka, E., Laurenčíková, A., Reiffers, M., Liday, J., Španková, M., : Significant increasing of onset temperature of FM transition in LSMO thin films,. Applied Surface Sci 269 (2013) 98-101.

Vincze, A., Vallo, M., Dobročka, E., Rýger, I., Vanko, G., Lalinský, T., : SIMS and XRD analysis on Ir contact layers for AlGaN/GaN HEMT structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 295-298.

Červeň, I., Dobročka, E., Fejdi, P., : Súpis základných termínov z kryštalografie Kultúra slova 47 (2013) 72-84.

2012

Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A., : AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation. Applied Phys. Lett. 100 (2012) 092105.

Viljamaa, J., Kario, A., Dobročka, E., Reissner, M., Kulich, M., Kováč, P., Haessler, W., : Effect of heat treatment temperature on superconducting performance of B4C added MgB2/Nb conductors. Physica C 473 (2012) 34-40.

Srnánek, R., Jakabovič, J., Kováč, J., Kováč, J., Haško, D., Šatka, A., Dobročka, E., Donoval, D., :Identification of the crystalline-phases in thin pentacene layers by Raman spectroscopy. Vacuum 86 (2012) 627-629.

Kuzma, A., Weis, M., Flickyngerová, S., Jakabovič, J., Šatka, A., Dobročka, E., Chlpík, J., Cirák, J., Donoval, M., Telek, P., Uherek, F., Donoval, D., : Influence of surface oxidation on plasmon resonance in monolayer of gold and silver nanoparticles. J. Applied Phys. 112 (2012) 103531.

Chromik, Š., Lalinský, T., Dobročka, E., Gierlowski, P., Štrbik, V., Laurenčíková, A., Španková, M., : Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology. Supercond. Sci Technol. 25 (2012) 035008.

Azimi, H., Fournier, D., Wirix, M., Dobročka, E., Ameri, T., Machui, F., Rodman, S., Dennler, G., Scharber, M., Hingerl, K., Loos, J., Brabec, C., Morana, M., : Nano-morphology characterization of organic bulk heterojunctions based on mono and bis-adduct fullerenes. Organic Electr. 13 (2012) 1315-1321.

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., Fedor, J., : Properties of Al2O3 thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

Roch, T., Dobročka, E., Mikula, M., Pidík, A., Durina, P., Haidry, A., Plecenik, T., Truchly, M., Grančič, B., Plecenik, A., Kúš, P., : Strong biaxial texture and polymorph nature in TiO2 thin film formed by ex-situ annealing on c-plane Al2O3 surface. J. Crystal Growth 338 (2012) 118-124.

Cirák, J., Sokolský, M., Weis, M., Dobročka, E., : The Langmuir monolayer: an efficient model for studying interfacial properties of biomembranes. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 157-160. (not IEE SAS).

2011

Hudec, B., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., Fröhlich, K., : Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer. J. Vacuum Sci Technol. B 29 (2011) 01AC09.

Schröfel, A., Kratošová, G., Bohunická, M., Dobročka, E., Vávra, I., : Biosynthesis of gold nanoparticles using diatoms-silica-gold and EPS-gold bionanocomposite formation, J. Nanopart. Res. 13 (2011) 3207-3216.

Vincze, A., Michniak, P., Varga, M., Dobročka, E., Uherek, F., : Development of diamond thin films on various substrates. In: APCOM 2011. Eds. D.Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 82-85.

Lapin, J., Pelachová, T., Witusiewicz, V., Dobročka, E., : Effect of long-term ageing on microstructure stability and lattice parameters of coexisting phases in intermetallic Ti–46Al–8Ta alloy. Intermetallics 19 (2011) 121-124.

Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., Fröhlich, K., : Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks. Applied Surface Sci 257 (2011) 7876-7880.

Jakabovič, J., Vincze, A., Kováč, J., Srnánek, R., Kováč, J., Dobročka, E., Donoval, D., Heinemeyer, U., Schreiber, F., Machovic, V., Uherek, F., : Surface and interface analysis of iodine-doped pentacene structures for OTFTs, Surface Inteface Anal. 43 (2011) 518-521. (not IEE SAS).

Mikula, M., Grančič, B., Roch, T., Plecenik, T., Vávra, I., Dobročka, E., Šatka, A., Buršíková, V., Držík, M., Zahoran, M., Plecenik, A., Kúš, P., : The influence of low-energy ion bombardment on the microstructure development and mechanical properties of TiBx coatings. Vacuum 85 (2011) 866-870.

Srnánek, R., Jakabovič, J., Kováč, J., Dobročka, E., Donoval, D., : Thin pentacene layer under pressure. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 296-299.

2010

Korytár, D., Ferrari, C., Mikulík, P., Vagovič, P., Dobročka, E., Áč, V., Konopka, P., Erko, A., Abrosimov, N., Zápražný, Z., : 1D X‐ray Beam Compressing Monochromators. AIP Conf. Proc. 1221 (2010) 59-62.

Viljamaa, J., Kováč, P., Hušek, I., Melišek, T., Štrbik, V., Dobročka, E., : Effect of fabrication route on density and connectivity of MgB2 filaments J. Phys.: Conf. Series 234 (2010) 022041.

Kováč, P., Hušek, I., Kulich, M., Hušeková, K., Melišek, T., Dobročka, E., : Effects influencing the grain connectivity in ex-situ MgB2 wires. Physica C 470 (2010) 340-344. (VEGA 2/0037/09).

Srnánek, R., Jakabovič, J., Dobročka, E., Irmer, G., Heinemeyer, U., Broch, K., Schreiber, F., Vincze, A., Machovic, V., Kováč, J., Donoval, D., : Evidence of pentacene bulk and thin film phase transformation into an orthorhombic phase by iodine diffusion. Chemical Phys. Lett. 484 (2010) 299-303.

Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., Fröhlich, K., : Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Semicond. Sci Technol. 25 (2010) 075007.

Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

Hudec, B., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., Fröhlich, K., : High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

Jurkovič, M., Hušeková, K., Čičo, K., Dobročka, E., Nemec, M., Fedor, J., Fröhlich, K., : Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 247-250.

Korytár, D., Ferrari, C., Mikulík, P., Vagovič, P., Dobročka, E., Áč, V., Konopka, P., Erko, A., Abrosimov, N., : Linearly graded GeSi beam-expanding/compressing X-ray monochromator J. Applied Crystall. 43 (2010) 176-178.

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., Kordoš, P., : Oxidized Al film as an insulation layer in AlGaN/GaN Metal–Oxide–Semiconductor heterostructure field effect transistors Japan. J. Applied Phys. 49 (2010) art. no. 046504. (VEGA 2/0098/09).

Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbik, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J., : Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate. Applied Surface Sci 256 (2010) 5618-5622.

Hušeková, K., Hušek, I., Kováč, P., Kulich, M., Dobročka, E., Štrbik, V., : Properties of MgB2 superconductor chemically treated by accetic acid. Physica C 470 (2010) 331-335. (VEGA 2/0037/09).

Áč, V., Korytár, D., Zápražný, Z., Dobročka, E., : Thermally tuned x-ray V-shaped monochromator – simulations and experimental results. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 93-96.

Dobročka, E., Jergel, M., : X-ray laboratory with rotating anode of the Consortium MULTIDISC of SAS – capabilities of the diffractometer Bruker D8 DISCOVER SSS, Materials Struct. 17 (2010) k12-k17.

2009

Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129. (APVV 51-045705).

Srnánek, R., Jakabovič, J., Dobročka, E., Kováč, J., Kytka, M., Donoval, D., : Diffusion of iodine in thin pentacene layers. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 100-103.

Šebo, P., Moser, Z., Švec, P., Janičkovič, D., Dobročka, E., Gasior, W., Pstruś, J., : Effect of indium on the microstructure of the interface between Sn3.13Ag0.74CuIn solder and Cu substrate. J. Alloys Compounds 480 (2009) 409-415.

Fröhlich, K., Aarik, J., Ťapajna, M., Rosová, A., Aidla, A., Dobročka, E., Hušeková, K., : Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes. J. Vacuum Sci Technol. B 27 (2009) 266-270. (APVV 0133-07). (VEGA 2/0031/08).

Kúdela, R., Gregušová, D., Stoklas, R., Šoltýs, J., Kučera, M., Dobročka, E., Kordoš, P., : HEMT transistors with aluminum oxide and InGaP layers. In: EW-MOVPE XIII. Ulm Univ. 2009. P. 225-228.

Hušeková, K., Jurkovič, M., Čičo, K., Machajdík, D., Dobročka, E., Lupták, R., Fröhlich, K., : Preparation of high permitivity GdScO3 films by liquid injection MOCVD, ECS Trans. 25 (2009) 1061.

Vincze, A., Lupták, R., Hušeková, K., Dobročka, E., Fröhlich, K., : Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD. Vacuum 84 (2009) 170. (VEGA 2/0031/08).

Fröhlich, K., Vincze, A., Dobročka, E., Hušeková, K., Čičo, K., Uherek, F., Lupták, R., Ťapajna, M., Machajdík, D., : Thermal stability of GdScO3 dielectric films grown on Si and InAlN/GaN substrates, Mater. Res. Soc. Symp. Proc. 1155 (2009) C09-03.

2008

Paskaleva, A., Ťapajna, M., Atanassova, E., Fröhlich, K., Vincze, A., Dobročka, E., : Effect of Ti doping on Ta2O5 stacks with Ru and Al gates. Applied Surface Sci 254 (2008) 5879-5885.

Ťapajna, M., Dobročka, E., Paskaleva, A., Hušeková, K., Atanassova, E., Fröhlich, K., : Electrical characterization of Ru- and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 267-270.

Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., Aidla, A., : Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochem. Solid-State Lett. 11 (2008) G19-G21.

Srnánek, R., Kováč, J., Jakabovič, J., Kováč, J., Irmer, G., Dobročka, E., Haško, D., : Characterization of organic field effect transistor structures by micro-Raman. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 255-258.

Orlický, O., Funaki, M., Dobročka, E., : Magnetomineralogical and the domain structure observations of the low-temperature oxidized titanomagnetite bearing basalts from southern Slovakia, Contrib. Geophys. Geodesy. Spec. Iss. 38 (2008) 89.

Kováč, P., Hušek, I., Dobročka, E., Melišek, T., Haessler, W., Herrmann, M., : MgB2 tapes made of mechanically alloyed precursor powder in different metallic sheaths. Supercond. Sci Technol. 21 (2008) 015004.

Beňo, J., Weis, M., Dobročka, E., Haško, D., : Mixed 2D molecular systems: Mechanic, thermodynamic and dielectric properties. Applied Surface Sci 254 (2008) 6370-6375.

Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.

2007

Ťapajna, M., Rosová, A., Hušeková, K., Roozeboom, F., Dobročka, E., Fröhlich, K., : Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode. Microelectr. Engn. 84 (2007) 2366-2369.

Kúdela, R., Martaus, J., Cambel, V., Kučera, M., Dobročka, E., : Novel MOVPE grown 2DEG structures for local anodic oxidation. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 49-52.

Kováč, P., Hušek, I., Skákalová, V., Meyer, J., Dobročka, E., Hirscher, M., Roth, S., : Transport current improvements of in-situ MgB2 tapes by the addition of carbon nanotubes, silicon carbide or graphite. Supercond. Sci Technol. 20 (2007) 105-111.

2006

Fröhlich, K., Lupták, R., Dobročka, E., Hušeková, K., Čičo, K., Rosová, A., Lukosius, M., Abrutis, A., Písečný, P., Espinos, J., : Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition. Materials Sci Semicond Process. 9 (2006) 1065-1072.

Ťapajna, M., Hušeková, K., Fröhlich, K., Dobročka, E., Roozeboom, F., : Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 21-24.

Franta, M., Rosová, A., Ťapajna, M., Dobročka, E., Fröhlich, K., : Microstructure of HfO2 and HfxSi1-xOy dielectric films prepared on Si for advanced CMOS application. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 47-50.

2005

Grančič, B., Mikula, M., Hruba, L., Gregor, M., Štefečka, M., Csuba, A., Dobročka, E., Plecenik, A., Kúš, P., : The influence of deposition parameters on TiB2 thin films prepared by DC magnetron sputtering, Vacuum 80 (2005) 174. (not IEE SAS).

2002

Horváth, D., Gmitra, M., Vávra, I., Dobročka, E., Brutovsky, B., : The evolutionary approach to the optimization of finite-size effects in magnetic dot arrays Czechosl. J. Physics 52 (2002) 123-126.

2001

Dobročka, E., Vávra, I., Wallenberg, L., : Simulation of electron diffraction patterns from III–V alloys with CuPt ordering: Effect of clusters and antiphase boundaries. J. Applied Phys. 89 (2001) 2653-2665.

1998

Harvanka, M., Dobročka, E., Vávra, I., : Antiphase boundaries in the ordered InGaP epitaxial layers prepared by MO CVD. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad Publ 1998. P. 115.

Munzar, L., Dobročka, E., Vávra, I., Kúdela, R., Harvanka, M., Christensen, N., : Antiphasing mechanism of ordered InGaP layers grown on GaAs Phys. Rev. B 57 (1998) 4642.

Dobročka, E., Vávra, I., Harvanka, M., : The stability of the misfit dislocation array at the substrate-epitaxial layer interface. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 63.

1996

Osvald, J., Dobročka, E., : Generalized approach to the parameter extraction from Schttky diodes I.-V. characteristics Semicond. Sci Technol. 11 (1996) 1198-1202.

Dobročka, E., Vávra, I., Kúdela, R., Harvanka, M., : Ordering in InGaP prepared by MOCVD. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 217.

1995

Dobročka, E., Osvald, J., : Response to „Comment on Influence of barrier height distribution on the parameters of Schottky diodes“ Applied Phys. Lett. 66 (1995) 3069.

Vávra, I., Dobročka, E., Wallenberg, L., : Transmission electron microscopy of superlattices. In: Proc. Multinat. Congress Electron Microscopy 1995. Bratislava: VÚ SAV 1995. P. 81.

1994

Dobročka, E., Osvald, J., : Influence of barrier height distribution on the parameters of Schottky diodes Applied Phys. Lett. 65 (1994) 575.

Ožvold, M., Tuscher, L., Čičmanec, P., Dobročka, E., Hurtová, ., Kopačková, ., Vávra, I., : Solid phase recrystallization of thin polycrystalline silicon films implanted with Si ions, Acta Phys. Slovaca 44 (1994) 207.

1991

Dobročka, E., : Geometrical principles of the monolithic x-ray magnifier, J. Applied Crystall. 24 (1991) 212-221. (not IEE SAS).

Dobročka, E., Gleichmann, R., : The evolution of prismatic dislocation loops in heavily Si-doped GaAs, IoP Conf. Series 117 (1991) 343-346. (not IEE SAS).

1990

Dobročka, E., : The effect of growth orientation on the resolved shear stresses for horizontal bridgman grown gaas crystals J. Crystal Growth 104 (1990) 428-434.

Dobročka, E., Sladek, J., : Thermal-stress analysis in horizontal bridgman grown crystals J. Crystal Growth 104 (1990) 419-427.

1989

Osvald, J., Dobročka, E., : The influence of postimplantation annealing on stresses in GaAs waters. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 219.

doc. RNDr. Edmund DOBROČKA, CSc.