Ing. Juraj DARMO, CSc.

2001

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., and Pelfer, P.G.: The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results, Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

Darmo, J., Dubecký, F., Zaťko, B., Nečas, V., and Pelfer, P.G.: An exploration of the semi-insulating GaAs-based particle detector at temperatures below 300K, Nuclear Instr. Methods in Phys. A 458 (2001) 437-440.

Dubecký, F., Darmo, J., Krempaský, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P.G., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., and Ručk, M.: On technology and performance of SAMO: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP, Nuclear Instr. Methods in Phys. A 458 (2001) 152-157.

Pelfer, P.G., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Darmo, J., Krempaský, M., and Sekáčová, M.: Present status and perspectives of the radiation detectors based on InP materials, Nuclear Instr. Methods in Phys. A 458 (2001) 400-405.

Nečas, V., Ly Anh, T., Sekáčová, M., Darmo, J., Dubecký, F., and Perďochová, A.: Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses, Nuclear Instr. Methods in Phys. A 458 (2001) 348-351.

1999

Ivančo, J., Dubecký, F., Darmo, J., Krempaský, M.,Bešše, I., and Senderák, R.: Semi-insulating GaAs-based Schottky contacts for detector of ionising radiation: An effect of the interface treatment, Nuclear Instr. Methods in Phys. Research A 434 (1999) 158-163.

1998

Darmo, J., Dubecký, F., Hardtdegen, H., Hollfelder, M., and Schmidt, R.: Deep-level states in MOVPE AlGaAs: The influence of carrier gas, J. Crystal Growth 186 (1998) 13.

Darmo, J., Dubecký, F., Kordoš, P., and Förster, A.: Annealing effect on concentration of EL-6like deep-level state in low-temperature-grown molecular beam epitaxial GaAs, Applied Phys. Lett. 72 (1998) 590.

Dubecký, F., Fornari, R., Darmo, J., Pikna, M., Gombia, E., Krempaský, M., Sekáčová, M., Hudek, P., and Ruček, M.: Electrical and detection properties of the particle detectors based on LEC semi-insulating InP, Nuclear Instr. Methods in Phys. Research A 408 (1998) 491.

1997

Dubecký, F., Krempaský, M., Pelfer, P.G., Darmo, J., Pikna, M., Šatka, A., Sekáčová, M., and Ruček, M.: GaAs detectors for hard X-ray astronomy, Nuclear Physics (Proc. Suppl.) B 54 (1997) 368.

Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., and Nimtz, G.: Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs, Applied Phys. Lett. 71 (1997) 1118.

Kuzmík, J., Darmo, J., Kúdela, R., Haščík, Š., and Mozolová, Ž.: Schottky contacts on reactive-ion etched InGaP, J. Vacuum Sci Technol. B 15 (1997) 2016.

1996

Dubecký, F., Darmo, J., Hlaváč, S., Benovič, M., Pikna, M., Pelfer, P.G., Förster, A., and Kordoš, P.: Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration, Nuclear Instr. Methods in Phys. A 377 (1996) 475.

1995

Thurzo, I., Gmucová, K., Dubecký, F., and Darmo, J.: Thermal currents from undoped semi-insulating GaAs monitored by charge deep-level transient spectroscopy, Inter. J. Modern Phys. B 9 (1995) 3099-3114.

1994

Darmo, J., Dubecký, F., Kordoš, P., Förster, A., Lüth, H.: Electrical properties and deep-level states in MBE GaAs layer grown at 250⁰C, Materials Sci Engn. B 28 (1994) 393.

Dubecký, F., Darmo, J., Betko, J., Mozolová, Ž., and Pelfer, P.G.: On the C-V analysis of Schottky barrier in undoped semi-insulating GaAs, Semicond. Sci Technol. 9 (1994) 1654.

Malacký, L., Klockenbrink, R., Darmo, J., Wehmann, H., Zwinge, G., and Schlachetzki, A.: InGaAs Schottky contacts with iron-doped InP enhancement layer, J. of Phys. D 27 (1994) 2414.