Ing. Ján ČERVENÁK, DrSc.

1995

Jergel, M., Červenák, J., Šmatko, V., Štrbík, V., Hanic, F., Kubranová, M., Travěnec, I., and Kliment, V.: Cermet compact made from semiconducting InSb with constant electrical resistance in 4 to 400K range, J. Material Sci 30 (1995) 2628.

1994

Jergel, M., Červenák, J., Štrbík, V., and Hanic, F.: Heterogeneous ceramic system prepared from semiconducting compound InSb, Applied Phys. Lett. 64 (1994) 3255.

1991

Valentovič, D. and Červenák J.: The influence of illumination on the time voltage dependence measured on piezoelectret thin-film metal cdte metal structures, Thin Solid Films 205 (1991) 218-222.

1989

Majkova, E., Červenák, J., Krempasky, J., and Duhaj, P.: Temperature-dependence of the seebeck coefficient in insb prepared by rapid quenching, Physica Status Solidi B 153 (1989) K147-K149.

1986

Brailovskii, E.J., Matveeva, L.A., Melnikov, G.D., Mikhailov, J.F., Semenova, S.N., Tkhorik, J.A., Khazan, L.S., Laichter, V., and Červenák, J.: Si_xGe_1-xGaAs heterojunction impatt-diodes, Crystal Research Technol. 21 (1986)413-421.

Valentovič, D. and Červenák, J.: Piezoelectret effect on metal-CdTe-metal thin-film structures, Thin Solid Films 137 (1986) 17-25.

1983

Konakova, R.V., Tchorik, Ju.A., Zajcevskij, I.L., Benč, V., Kordoš, P., Morvic, M., and Červenák, J.: Electrical characteristics of GaAs LPE Schottky diodes, Crystal Res. Technol. 18 (1983) 1451.

Thurzo, I., Gmucová, K., Červenák, J., and Lalinský, T.: GaAs-anodic oxide interface examination by deep-level transient current spectroscopy, Phys. Status Solidi A 77(1983) 323.

Konakova, R.V., Tchorik, Ju.A., Zajcevskij, I.L., Kordoš, P., Morvic, M., and Červenák, J.: The influence of stress on the fine structure of Schottky diode I-V characteristics in the Breakdown region, Physica Status Solidi A 77 (1983) K125.

1981

Konakova, R.V., Tchorik, Y.A., Zajcevskij, I.L., Kordoš, P., Morvic, M., and Červenák, J.: Avalanche breakdoron pecularities of Al_xGa_1-xAs IMPATT diodes, Phys. Status Solidi A 63 (1981) K163.

1979

Valentovič, D., Červenák, J., Luby, Š., Aldea, M.L., and Botila, T.: Some non-equilibrium phenomena in sputtered CdTe thin films, Physica Status Solidi (A) 56 (1979), pp. 341-347.

1978

Buch, J. and Červenák, J.: Silicon nitride films prepared by reactive plasma sputtering, Thin Solid Films 55 (1978) 185-190.

1976

Rapoš, M., Ružinský, M., Luby, Š., and Červenák, J.: Dielectric properties of Me/CdTe/Me thin film structures, Thin Solid Films 36 (1976) 103-106.

1974

Červenák, J.: Electret and electretphotovoltaic effects: the new effects in thin films structures metal – CdTe – metal, Czechoslov. J. Phys. B 24 (1974) 925.

Červenák, J., Kneppo, I., and Luby, Š.: Electret effect in CdTe thin films, Acta Phys. Slov. 24 (1974) 71.

1973

Kneppo, I., Luby, Š., and Červenák, J.: Frequency dependence of the conductivity of amorphous germanium film between 20 Hz and 26 GHz, Thin Solid Films 17 (1973) 43.

1972

Kneppo, I. and Červenák, J.: Photodielectric effect in thin film metal-CdTe-metal structures, Solid State Electr. 15 (1972) 587.

1971

Krempaský, J., and Červenák, J.: The influence of contacts on the VA-characteristics of thin-layer systems with amorphous semiconductors, Czechoslov. J. Phys. B 21(1971) 285.

Krempaský, J., Červenák, J., Dieška, P., and Kubek, J.: The temperature hysteresis of the current-voltage characteristics of thin semiconducting films, Phys. Status Solidi A 6 (1971) 415.

1971

Luby, Š., Červenák, J., Kubek, J., Marcin, M., Schilder, J.: Switching phenomena in amorphous thin films of Ge, DcxTey and SbxGey, Czechoslov. J. Phys. B 21 (1971) 878.

1970

Červenák, J., Živčáková, A., and Buch, J.: Structures and electrical properties of InSb thin films prepared by plasmatic sputtering, Czechoslov. J. Phys. B 20 (1970) 84.

Červenák, J.: Dependence of the electrical conductivity on the electric field in fine-crystalline InSb thin films, Thin Solid Films 5 (1970) 277.

Luby, Š., Lovjagin, R.N., Doshsikova, N., Aleksandrov, L.N., and Červenák, J.: Temperature and fregmency dependencies of the effective density of surface states at silicon nitrides interface, Solid State Electr. 13 (1970)1097.

Luby, Š., Červenák, J. a Schilder, J.: Dependence of crystal structure and charge carrier mobility in Ge thin films on condensing atom energy, Fizika tvjordovo tela 12(1970) 1297.

1969

Červenák, J.: Space charged limited electric currents in thin-film metal-InSb-metal structures, Czechoslov. J. Phys. B 19 (1969) 8.

Červenák, J., Aleksandrov, L.N., Lovjagin, R.N., and Krivorotov, E.A.: Growth mechanism and some physical properties of silicon nitride thin films prepared by reactive sputtering in nitrogen, J. Vacuum Sci Technol. 6 (1969) 605.

Červenák, J., Aleksandrov, L.N., Lovjagin, R.N., and Krivorotov, E.A.: Some physical properties of Si–Si₃N₄ interfaces and silicon nitride thin films prepared by reactive sputtering in nitrogen , J. Vacuum Sci Technol. 6 (1969) 938.