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2005
Morvic, M. and Betko, J.: Planar Hall effect in Hall sensors made from InP/InGaAs heterostructure, Sensors Actuators A 120 (2005) 130-133.
Serényi, M., Betko, J., Nemcsics, Á., Khanh, N.Q., Basa, D.K., and Morvic, M.: Study on the RF sputtered hydrogenated amorphous silicon–germanium thin films, Microelectr. Reliability 45 (2005) 1252.
2004
Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., and Fedor, J.: Resistivity and mobility in ordered InGaP grown by MOVPE, Physica Status Solidi (c) 1 (2004) 382-387.
2003
Hasenöhrl, S., Novák, J., Kúdela, R., Betko, J., Morvic, M., and Fedor, J.: Anisotropy in tran-sport properties of ordered strained InGaP, J. of Crystal Growth 248 (2003) 369.
Serenyi, M., Betko, J., Nemcsics, Khahn N.Q., and Morvic, M.: Fabrication of a-SiGe structure by RF sputtering for solar cell purpose, Physica Stat. Solidi (c) 0 (2003) 857-861.
Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., and Fedor, J.: Temperature dependent magnetoresistance characterization of ordered strained InGaP grown by MOVPE. In: Booklet of Extended Abstracts from 10th Int. Workshop on Metal-Organic Vapour Phase Epitaxy – EW MOVPE X. Univ. of Lecce 2003. P. 163.
2002
Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., and Sekáčová, M.: Electrical properties of semi-insulating GaAs irradiated with neutrons, Nuclear Instr. and Methods in Phys. Res. B 197 (2002) 240-246.
Boháček, P., Morvic, M., Betko, J., Dubecký, F., and Huran, J.: Electrical properties of semi-insulating GaAs irradiated with neutrons. In: SIMC-XII-2002. Piscataway: IEEE 2002. P. 31-34.
2000
Kordoš, P., Javorka, P., Morvic, M., Betko, J., Van Hove, J.M., Wowchak, A.M., and Chow, P.P.: Conductivity and Hall-effect in highly resistive GaN layers, Applied Phys. Letters 76 (2000) 3762-3764.
Betko, J. and Morvic, M.: Indication of mixed conductivity in III-V semiconductors using conductivity, Hall effect and magnetoresistance measurements, Physica Status Solidi A 181 (2000) 169-175.
Kordoš, P., Morvic, M., Betko, J., Van Hove, J.M., Wowchak, A.M., and Chow, P.P.:Conductivity and Hall effect characterization of highly resestive molecular-beam epitaxial GaN layers, J. of Applied Physics 88 (2000) 5821-5826.
Kordos, P., Alam, A., Betko, J., Chow, P.P., Heuken, M., Javorka, P., Kocan, M., Marso, M., Morvic, M., and Van Hove, J.M.: Material and device issues of GaN-based HEMTs. In: 8th IEEE Int. Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. IEEE 2000. P. 61-66.
Morvic, M., Betko, J., Javorka, P., Van Hove, J.M., and Kordoš, P.: Electrical transport in highly resistive GaN layers. In: WOCSDICE 2000 : 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe. P. II-5-6.
Kordoš, P., Betko, J., and Morvic, M.: Electrical transport in highly resistive GaN layers. In: Institut für Schicht- und Ionentechnik 2000. Jülich: Forschungszentrum, 2000. P. 28.
Boháček, P., Morvic, M., Betko, J., Dubecký, F., and Huran, J.: Study of semi-insulating GaAs irradiated with neutrons using conductivity, Hall effect, and magnetoresistance measurement. In: APCOM 2000. Proc. of the 6th Int. Workshop on Applied Phys. and Condensed Matter. Eds. J.Mudroň, P.Šutta, J.Vajda, D.Barančok. Liptovský Mikuláš, Military Academy 2000. P. 129.
1999
Betko, J., Morvic, M., Novák, J., Förster, A., and Kordoš, P.: Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs, J. of Applied Physics 86 (1999) 6243-6248.
1998
Morvic, M., Betko, J., Novák, J. and Kordoš, P.: On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs, Physica Status Solidi B 205 (1998) 125.
Morvic, M., Betko, J., Hasenöhrl, S., Gregušová, D., Cambel, V., Eliáš, P., and Novák, J.: On quantum Hall resistance and Shubnikov de Haas effect measurements on InP/InGaAs structures. In: Heterostructure Epitaxy and Devices – HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht, Kluwer Acad Pub 1998. P. 285.
1997
Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., Nimtz, G: Space-charge controlled conduction in low-temperature-grown molekular-beam epitaxial GaAs, Applied Physics Letters 72 (1997) 1118.
Novák, J., Kučera, M., Morvic, M., Betko, J., Förster, A., and Kordoš, P.: Characterization of low-temperature GaAs by galvanomagnetic and photoluminiscence measurements, Materials Sci & Engn. B 44 (1997) 341.
1996
Betko, J., Morvic, M., Novák, J., Förster, A., Kordoš, P.: Hall mobility analysis in low-teperature-grown molecular beam epitxial GaAs, Applied Physics Letters 69 (1996) 2563.
Novák, J., Morvic, M., Betko, J., Förster, A., and Kordoš, P.: Wet chemical separation of low-temperature GaAs layes from their GaAs substrate, Materials Sci & Engn. B 40 (1996) 58.
Morvic, M., Betko, J., Novák, J., Förster, A., and Kordoš, P.: Transport properties of MBE GaAs layers grown at 420oC. In : Heterostructure Epitaxy and Devices. Eds. J. Novák and A. Schlachetzki. NATO ASI Series 3, High Technology, Vol. 11. Dordrecht, Kluwer Academic Publ. 1996. P. 197.
Dubecký, F., Darmo, J., Krempaský, M., Betko, J., Pikna, M., Weber, E.R., and Pelfer, P.G.: On relation between detection parameters of SI GaAs particle detectors and physical properties of starting materials. In: The 9th Conference on Semiconducting and Insulating Materials. Toulouse, 1996. Ed. Ch.Fontaine. IEEE Publ. 1996. P.71.
Dubecký, F., Betko, J., Morvic, M., Darmo, J., and Bešše, I.: Neutron irradiated undoped LEC SI GaAs: I. Galvanomagnetic, I-V, PC and alpha detection study. In: Gallium Arsenide and Related Compounds. The 3th International Workshop, San Miniato 1995. Ed. P.G.Pelfer. Singapore, World Sci. 1996. P. 152-157.
1995
Kordoš, P., Förster, A., Betko, J., Morvic, M., and Novák, J.: Semi-insulating GaAs layers grown by molecular-beam epitaxy, Applied Physics Letters 67 (1995) 983.
Kordoš, P., Betko, J., Förster, A., Kuklovský, S., Dieker, Ch., Rüders, F.: Electrical and structural chatacterization of MBE grown at temperatures between 200 and 6000C. In: 21st Int. Symposium on Compound Semicond., San Diego 1994, Inst. Phys. Conf. Ser. No.141 (1995) 295.
1994
Betko, J. and Kuklovský, S.: On the determination of galvanomagnetic parameters of high resistance layers grown on semiinsulating GaAs substrates, Acta Physica Hungarica 74 (1994) 121.
Dubecký, F., Darmo, J., Betko, J ., Mozolová, Ž., an d Pelfer, P.G.: C-V analysis of the Schottky barrier in undoped semi-insulating GaAs, Semicond. Sci & Technology 9 (1994) 1654.
Betko, J., Kordoš, P., Kuklovský, S., Förster, A., Gregušová, D., Lüth, H.: Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature, Materials Sci & Engn. B 28 (1994) 147.
Dubecký, F., Darmo, J., Betko, J ., Bešše, I., Hrubčín, L., Hlaváč, S., and Benovič, M.: Detection properties of the first semi-insulating GaAs radiation detectors produced in Slovakia, Senzor 1 (1994) 5.
1993
Betko, J . and Měřínsky, K.: On the temperature dependence of the intrinsic concentration in semi-insulating InP determined from galvanomagnetic measurements, Physica Status Solidi A 135 (1993) K67.
Dubecký, F., Darmo, J., Betko, J., Papaioannou, G., Ioannou, V., and Baumgartner, M.: Study of deep acceptor states in undoped semi- insulating GaAs with low carbon content by transient spectroscopy techniques. In: Proc. 7th Conf. on III-V Semi-Insulating Materials. Ed.:C.J.Miner. Bristol, IOP Publ. 1993. P.247.
1991
Betko, J.: On the determination of the intrinsic concentration in semi-insulating GaAs/Cr/ and InP/Fe/ using resistivity and Hall measurements, Physica Status Solidi A 127 (1991) 451.
Betko, J .: Metody opredelenija električeskich parametrov poluizolirujuščevo arsenida gallija s pomoščju izmerenijprovodimosti i effekta Cholla v slabych magnitnych poljach, Optoelektronika i poluprovodnikovaja technika 20 (1991) 60.
1986
Betko, J . and Měřínsky, K.: Temperature dependences of electrical parameters of semi-insulating GaAs determined from galvanomagnetic measurements, Physica Status Solidi A 93 (1986) K205.
1985
Betko, J . and Měřínsky, K.: Analysis of galvanomagnetic parameters in semi-insulating GaAs with respect to the three-band model, Physica Status Solidi A 87 (1985) 683.
1983
Betko, J . and Měřínsky, K.: Geometrical magnetoresistance effect in semiconductors with mixed conductivity, determination of the electron Hall mobility in semiinsulating GaAs, Physica Status Solidi A 77 (1983) 331.
1982
Hrivnák, L. and Betko, J.: On the relation between electron and hole mobilities in semi-insulating GaAs, Physica Status Solidi B 112 (1982) K143.
Hrivnák, L., Betko, J ., and Měřínsky, K.: Determination of carrier mobilities and concentration in semi-insulating GaAs at room temperature and above. In: Proc. Sem. Ins. III-V Mater., Evian 1982. Nantwich, Shiva 1982. P. 139.
1981
Hrivnák, L. and Betko, J.: Influence of the magnetic field on the currentvoltage characteristics distinguished by the satured voltage, Acta Physica Slovaca 31 (1981) 257.
1979
Betko, J . and Měřínsky, K.: Determination of the electrical properties of semi-insulating GaAs, J. of Applied Physics 50 (1979) 4212.
1977
Hrivnák, L., Morvic, M., and Betko, J.: Current-voltage characteristics of GaAs p-i-n and n-i-n diodes, Solid State Electronics 20 (1977) 417.
1973
Betko, J ., Boguslavskij, I.V., Hlásnik, I., Žernin, J.D. Morvic, M., Polák, M., and Štofanik, F.: Izmerenije vektora magnitnoj indukcii pri pomošči trech datčikov Cholla. Deponirovannaja publ. SÚJV B2-13-7464. Dubna 1973.
1971
Betko, J. and Morvic, M.: On the frequency response of Ge-magnetodiodes, Solid State Electronics 14 (1971) 1059.
1968
Měřínsky, K., Betko, J., Morvic, M., and Kordoš, P.: Über dieelektrischen eigenschaften von Ge-Magnetodioden, Solid State Electronics 11 (1968) 187.
1967
Betko, J ., Hlásnik, I., and Měřínsky, K.: Ge-Magnetodioden in flüssigem Helium, Zeitschrift für Naturforschung 22a (1967) 2121.
1965
Betko, J. and Morvic, M.: p-n junction structures. In: Proc. of the Symposium on Test Methods & Measurements of Semicond. Devices. Budapest 1967. P.501.
Betko, J., Hlásnik, I., Polák, M., and Puzjak, I.: Issledovanije magnitnych polej v elementach ionno-optičeskoj sistemy antiprotonnovo kanala 5 GeV. Preprint SÚJV Dubna R-1945. Dubna 1965.
1964
Betko, J., Hlásnik,I., Polák, M., and Puzjak, I.: Razbor odnoj schemy dľa magnitnych izmerenij pri pomošči datčikov cholla. Preprint SÚJV Dubna, R-1689, Dubna 1964.