Mgr. Peter NÁDAŽDY, PhD.

  • 2024

Held, V., Mrkyvkova, N., Halahovets, Y., Nádaždy, P., Vegso, K., Vlk, A., Ledinský, M., Jergel, M., Bernstorff, S., Keckes, J., Schreiber, F., and Šiffalovič, P.: Evolution of defects, morphology, and strain during FAMAPbI3 perovskite vacuum deposition: insights from in situ photoluminescence and X-ray scattering, ACS Applied Mater. Interfaces 16 (2024) 35723-35731.

Sahoo, P.P., Güneren, A., Hudec, B., Mikolášek, M., Nada, A., Precnerová, M., Mičušík, M., Lenčéš, Z., Nádaždy, P., and Fröhlich, K.: Stabilization of the solid-electrolyte-interphase layer and improvement of the performance of silicon−graphite anodes by nanometer-thick atomic-layer-deposited ZnO films, ACS Applied Nano Mater. 7 (2024) 18486–18498.

Salehtash, F., Annušová, A., Stepura, A., Soyka, Y., Halahovets, Y., Hofbauerová, M., Mičušík, M., Kotlár, M., Nádaždy, P., Albrycht, P., Šiffalovič, P., Jergel, M., Omastová, M., and Majková, E.: SERS performance of Ti3C2Tx MXene-based substrates correlates with surface morphology, Materials 17 (2024) 1385.

Gucmann, F., Ťapajna, M., Hušeková, K., Dobročka, E., Rosová, A., Nádaždy, P., Eliáš, P., Egyenes, F., Hrubišák, F., Chouhan, H., Keshtkar, J., Zheng, X., Pomeroy, J.W., Kuball, M., Xiao, X., Mao, Y., Meng, B., Ma, G., and Yuan, C.: Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD, Proc. SPIE 12887 (2024) 1288705.

Gucmann, F., Hušeková, K., Rosová, A., Dobročka, E., Egyenes, F., Hrubišák, F., Keshtkar, J., Chouhan, H., Krettová, M., Eliáš, P., Nádaždy, P., Gregušová, D., Pohorelec, O., Kozak, A., and Ťapajna, M.: Gallium oxide for applications in electronics and optoelectronics. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 13-16. ISBN 978-80-554-2109-4.

Chouhan, H., Egyenes, F., Rosová, A., Hušeková, K., Dobročka, E., Nádaždy, P., Ťapajna, M., Xiao, X., Mao, Y., Meng, B., Ma, G., Yuan, C., and Gucmann, Filip.: Heteroepitaxial growth of (010) β-Ga2O3ON sapphire substrates using α-Ga2O3 template by liquid-injection MOCVD. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 73-76. ISBN 978-80-554-2109-4.

  • 2023

Pribusová Slušná, L., Vegso, K., Dobročka, E., Vojteková, T., Nádaždy, P., Halahovets, Y., Sojková, M., Hrdá, J., Precner, M., Šiffalovič, P., Chen, Z., Huang, Y., Ražnjević, S., Zhang, Z., and Hulman, M.: Ordered growth of hexagonal and monoclinic phases of MoTe2 on a sapphire substrate, CrystEngComm 25 (2023) 5706-5713.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

Sojková, M., Píš, I., Hrdá, J., Vojteková, T., Pribusová Slušná, L., Vegso, K., Šiffalovič, P., Nádaždy, P., Dobročka, E., Krbal, M., Fons, P.J., Munnik, F., Magnano, E., Hulman, M., and Bondino, F.: Lithium-induced reorientation of few-layer MoS2 films, Chem. Mater. 35 (2023) 6246-6257.

Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.

Gucmann, F., Nádaždy, P., Hušeková, K., Dobročka, E., Priesol, J., Egyenes, F., Šatka, A., Rosová, A., and Ťapajna, M.: Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD, Mater. Sci Semicond. Process. 156 (2023) 107289.

Hasenöhrl, S., Blaho, M., Dobročka, E., Gucmann, F., Kučera, M., Nádaždy, P., Stoklas, R., Rosová, A., and Kuzmík, J.: Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire, Mater. Sci Semicond. Process. 156 (2023) 107290.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Material properties of MOCVD-grown β- and κ-Ga2O3 thin films on 4H-SiC substrates. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 87-90.

Ťapajna, M., Egyenes, F., Hrubišák, F., Hušeková, K., Dobročka, E., Nádaždy, P., Rosová, A., Chouhan, H., Keshtkar, J., and Gucmann., F.: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties. In: IMFEDK 2023: Inter. Meeting for Future of Electron Devices, Kansai. – IEEE, 2023, p. IN10. ISBN 979-8-3503-9378-1.

  • 2022

Shaji, A., Vegso, K., Sojková, M., Hulman, M., Nádaždy, P., Halahovets, Y., Pribusová Slušná, L., Vojteková, T., Hrdá, J., Jergel, M., Majková, E., Wiesmann, J., and Šiffalovič, P.: Stepwise sulfurization of MoO3 to MoS2 thin films studied by real-time X-ray scattering, Applied Surface Sci 606 (2022) 154772.

Held, V., Mrkývková Tesařová, N., Nádaždy, P.,Végso, K., Vlk, A., Ledinský, M., Jergel, M., Chumakov, A., Roth, S.V., Schreiber, F., and Šiffalovič, P.: Evolution of structure and optoelectronic properties during halide perovskite vapor deposition, J. Phys. Chem. Lett. 13 (2022) 11905-11912.(Not IEE SAS)

Prochazkova, E., Filo, J., Cechova, L.M., Dracinsky, M., Cisarova, I., Janeba, Z., Kawamura, I., Naito, A., Kubena, I., Nádaždy, P., Šiffalovič, P., and Cigan, M.: Photoswitching of 5-phenylazopyrimidines in crystalline powders and thin films, Dyes & Pigments 199 (2022) 110066. (Not IEE SAS)

Hrubišák, F., Hušeková, K., Egyenes, F., Rosová, A., Kubranská, A., Dobročka, E., Nádaždy, P., Keshtar, J., Gucmann, F., and Ťapajna, M.: Structural and electrical properties of Ga2O3 transistors grown on 4H-SiC substrates. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 115-118.

Horský, M., Nádaždy, P., Dobročka, E., Gregušová, D., Seifertová, A., Dérer, J., Fedor, J., Ščepka, T., and Hudec, B.: Electrical properties of Pt/TiO2/TiN structures grown by atomic layer deposition using TTIP and water. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 37-40.

  • 2021

Brunová, A., Végso, K., Nádaždy, V., Nádaždy, P., Subair, R., Jergel, M., Majková, E., Pandit, P., Roth, S.V., Krasnansky, A., Hinderhofer, A., Schreiber, F., Tian, J., and Šiffalovič, P.: Structural and trap-state density enhancement in flash-infrared annealed Perovskite layers, Adv. Mater. Interfaces 8 (2021) 2100355. (Not IEE SAS)

Gorfman, S., Spirito, D., Cohen, N., Šiffalovič, P., Nádaždy, P., and Li, Y.: Multipurpose diffractometer for in situ X-ray crystallography of functional materials, J. Applied Crystall. 54 (2021) 914-923. (Not IEE SAS)

Huss-Hansen, M.K., Hodas, M., Mrkývková, N., Hagara, J., Nádaždy, P., Sojková, M., Høegh, S.O. , Vlad, A., Pandit, P., Majková, E., Šiffalovič, P., Schreiber, F., Kjelstrup-Hansen, J., and Knaapila, M.: Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenes, Phys. Rev. Mater. 5 (2021) 053402. (Not IEE SAS)

Kovaricek, P., Nádaždy, P., Pluharova, E., Brunová, A., Subair, R., Végso, K., Guerra, Valentino Libero P., Volochanskyi, O., Kalbac, M., Krasnansky, A., Pandit, P., Roth, S.V., Hinderhofer, A., Majková, E., Jergel, M., Tian, J., Schreiber, F., and Šiffalovič, P.: Crystallization of 2D hybrid organic-inorganic Perovskites templated by conductive substrates, Adv. Funct. Mater. 31 (2021)  2009007. (Not IEE SAS)

Liu, G., Liu, J., Dunn, A.S., Nádaždy, P., Šiffalovič, P., Resel, R., Abbas, M., Wantz, G., and Geerts, Y.H.: Directional crystallization from the melt of an organic p-Type and n-Type semiconductor blend, Crystal Growth  Design 21 (2021) 5231-5239. (Not IEE SAS)

Majerčíková, M., Nádaždy, P., Chorvát, D. Jr., Satrapinskyy, L., Valentová, H., Kroneková, Z., Šiffalovič, P., Kronek, J., and Zahoranová, A.: Effect of dexamethasone on thermoresponsive behavior of poly(2-oxazoline) diblock copolymers, Polymers 13 (2021) 1357. (Not IEE SAS)

Mrkývková, N., Held, V., Nádaždy, P., Subair, R., Majková, E., Jergel, M., Vlk, A., Ledinský, M., Kotlár, M., Tian, J., and Šiffalovič, P.: Combined in situ photoluminescence and X-ray scattering reveals defect formation in Lead-Halide Perovskite films, J. Phys. Chem. Lett. 12 (2021) 10156-10162. (Not IEE SAS)

Nádaždy, P., Hagara, J., Mikulik, P., Zápražný, Z., Korytár, D., Majková, E., Jergel, M., and Šiffalovič, P.: A high-throughput assembly of beam-shaping channel-cut monochromators for laboratory high-resolution X-ray diffraction and small-angle X-ray scattering experiments, J. Applied Crystall. 54 (2021) 730-738. (Not IEE SAS)

Shaji, A., Vegso, K., Sojková, M., Hulman, M., Nádaždy, P., Hutár, P., Pribusová Slušná, L., Hrdá, J., Bodik, M., Hodas, M., Bernstorff, S., Jergel, M., Majková, E., Schreiber, F., and Šiffalovič, P.: Orientation of few-layer MoS2 films: in-situ x-ray scattering study during sulfurization, J. Phys. Chem. C 125 (2021) 9461–9468.

Tkalčević, M., Sancho-Parramon, J., Basioli, L., Bubaš, M., Dražić, G., Nádaždy, P., Šiffalovič, P., and Mičetić, M.: 3D networks of nanopores in alumina: Structural and optical properties, Micropor. Mesopor. Mater. 325 (2021) 111306. (Not IEE SAS)

  • 2020

Basioli, L., Tkalčević, M., Bogdanović-Radović, I., Dražić, G., Nádaždy, P., Šiffalovič, P., Salamon, K., and Mičetić, M.: 3D networks of ge quantum wires in amorphous alumina matrix, Nanomater. 10 (2020) 1363. (Not IEE SAS)

Bodik, M., Maxian, O., Hagara, J., Nádaždy, P., Jergel, M., Majková, E., and Šiffalovič, P.: Langmuir–scheaffer technique as a method for controlled alignment of 1d materials, Langmuir 36 (2020) 4540-4547. (Not IEE SAS)

Hagara, J.,  Mrkývková, N., Feriancová, L., Putala, M., Nádaždy, P., Hodas, M., Shaji, A., Nádaždy, V., Huss-Hansen, M.K., Knaapila, M., Hagenlocher, J., Russegger, N., Zwadlo, M., Merten, L., Sojková, M., Hulman, M., Vlad, A., Pandit, P., Roth, S., Jergel, M., Majková, E., Hinderhofer, A., Šiffalovič, P., and Schreiber, F.: Novel highly substituted thiophene-based n-type organic semiconductor: structural study, optical anisotropy and molecular control, Crystengcomm, 22 (2020) 7095-7103. (Not IEE SAS)

Hagara, J., Mrkývková, N., Nádaždy, P., Hodas, M., Bodik, M., Jergel, M., Majková, E., Tokár, K., Hutár, P., Sojková, M., Chumakov, A., Konovalov, O., Pandit, P., Roth, S., Hinderhofer, A., Hulman, M., Šiffalovič, P., and Schreiber, F.: Reorientation of π-conjugated molecules on few-layer MOS2 films, Phys. Chem. Chem. Phys. 22 (2020) 3097-3104. (Not IEE SAS)

Huang, F., Šiffalovič, P., Li, B., Yang, S., Zhang, L., Nádaždy, P., Cao, G., and Tian, J.: Controlled crystallinity and morphologies of 2d ruddlesden-popper perovskite films grown without anti-solvent for solar cells, Chem. Engn. J. 394 (2020) 124959. (Not IEE SAS)

Hutár, P., Sojková, M., Kundrata, I., Vegso, K., Shaji, A., Nádaždy, P., Pribusová Slušná, L., Majková, E., Siffalovic, P., and Hulman, M.: Correlation between the crystalline phase of molybdenum oxide and horizontal alignment in thin MoS2 films, J. Phys. Chem. C 124 (2020) 19362–19367. (Not IEE SAS)

Mrkývkova, N., Nádaždy, P., Hodas, M., Chai, J., Wang, S., Chi, D., Sojková, M., Hulman, M., Chumakov, A., Konovalov, O.V., Hinderhofer, A., Jergel, M., Majková, E., Šiffalovič, P., and Schreiber, F.: Simultaneous monitoring of molecular thin film morphology and crystal structure by x-ray scattering, Cryst. Growth Des. 20 (2020)  5269–5276. (Not IEE SAS)

Shaji, A., Micetic, M., Halahovets, Y., Nádaždy, P., Maťko, I., Jergel, M., Majková, E., and Šiffalovič, P.: Real-time tracking of the self-assembled growth of a 3d ge quantum dot lattice in an alumina matrix, J. Applied Crystall. 53 (2020) 1029-1038. (Not IEE SAS)

  • 2019

Benkovičová, M., Hološ, A., Nádaždy, P., Halahovets, Y., Kotlár, M., Kollár, J., Šiffalovič, P., Jergel, M., Majková, E., Mosnáček, J., and Ivančo, J.: Tailoring the interparticle distance in langmuir nanoparticle films, Phys. Chem. Chem. Phys. 21 (2019) 9553-9563. (Not IEE SAS)

Mrkývková, N., Hodas, M., Hagara, J., Nádaždy, P., Halahovets, Y., Bodik, M., Tokár, K., Chai, J. W., Wang, S. J., Chi, D. Z., Chumakov, A., Konovalov, O., Hinderhofer, A., Jergel, M., Majková, E., Šiffalovič, P., and Schreiber, F.: Diindenoperylene thin-film structure on MOS2 monolayer, Applied Phys. Lett. 114 (2019) 251906. (Not IEE SAS)

Nádaždy, P., Hagara, J., Jergel, M., Majková, E., Mikulík, P., Zápražný, Z., Korytár, D., and Šiffalovič, P.: Exploiting the potential of beam-compressing channel-cut monochromators for laboratory high-resolution small-angle x-ray scattering experiments, J. Applied Crystall. 52 (2019)  498-506. (Not IEE SAS)

Subair, R., Di Girolamo, D., Bodik, M., Nádaždy, V., Li, B., Nádaždy, P., Markovic, Z.,  Benkovičová, M., Chlpik, J., Kotlar, M., Halahovets, Y., Šiffalovič, P., Jergel, M., Tian, J., Brunetti, F., and Majková, E.: Effect of the doping of pc61bm electron transport layer with carbon nanodots on the performance of inverted planar mapbi(3) perovskite solar cells, Solar Energy 189 (2019) 426-434. (Not IEE SAS)

Urbánek, P., Kuřitka, I., Ševčík, J., Toušková, J., Toušek, J., Nádaždy, V., Nádaždy, P., Végso, K., Šiffalovič, P., Rutsch, R., and Urbánek, M.: An experimental and theoretical study of the structural ordering of the ptb7 polymer at a mesoscopic scale, Polymer 169 (2019) 243-254. (Not IEE SAS)

  • 2018

Bodik, M., Šiffalovič, P., Nádaždy, P., Benkovičová, M., Marković, Z.M., Chlpik, J., Cirak, J., Kotlár, M., Mičušík, M., Jergel, M., and Majková, E.: On the formation of hydrophobic carbon quantum dots Langmuir films and their transfer onto solid substrates, Diamond Relat. Mater. 83 (2018) 170-176. (Not IEE SAS)

Jergel, M., Halahovets, Y., Maťko, I., Korytár, D., Zápražný, Z., Hagara, J., Nádaždy, P., Šiffalovič, P., Kečkéš, J., and Majková, E.: Finishing of Ge nanomachined surfaces for x-ray crystal optics, Inter. J. Adv. Manufact. Technol. 96 (2018) 3603-3617. (Not IEE SAS)

Nádaždy, V., Gmucová, K., Nádaždy, P., Šiffalovič, P., Végso, K., Jergel, M., Schauer, F., and Majková, E.: Thickness effect on structural defect-related density of states and crystallinity in P3Ht thin films on ito substrates, J. Phys. Chem. C 122 (2018) 5881-5887. (Not IEE SAS)

  • 2017

Mišicák, R., Novota, M., Weis, M., Gigáň, M., Šiffalovič, P., Nádaždy, P., Kožíšek, J., Kožíšková, J., Pavúk, M., and Putala, M.: Effect of alkyl side chains on properties and organic transistor performance of 2,6-bis(2,2´-bithiophen-5yl)Naphthalene, Synthet. Metals 233 (2017) 1-14. (Not IEE SAS)

Végso, K., Šiffalovič, P., Jergel, M., Nádaždy, P., Nádaždy, V., and Majková, E.: Kinetics of polymer-fullerene phase separation during solvent annealing studied by table-top x-ray scattering, ACS Applied Mater. Interfaces 9 (2017) 8241-8247. (Not IEE SAS)