Mgr. Fridrich EGYENES

  • 2024

Gucmann, F., Meng, B., Chvála, A., Kúdela, R., Yuan, C., Ťapajna, M., Florovič, M., Egyenes, F., Eliáš, P., Hrubišák, F., Kováč, J.Jr., Fedor, J., and Gregušová, D.: Improved thermal performance of InGaAs/GaAs nanomembrane HEMTs transferred onto various substrates by epitaxial lift-off, ACS Applied Electron. Mater. 6 (2024) 5651–5660.

Xiao, X., Mao, Y., Meng, B., Ma, G., Hušeková, K., Egyenes, F., Rosová, A., Dobročka, E., Eliáš, P., Ťapajna, M., Gucmann, F., and Yuan, C.: Phase-dependent phonon heat transport in nanoscale gallium oxide thin films, Small 20 (2024) 2309961.

Gucmann, F., Ťapajna, M., Hušeková, K., Dobročka, E., Rosová, A., Nádaždy, P., Eliáš, P., Egyenes, F., Hrubišák, F., Chouhan, H., Keshtkar, J., Zheng, X., Pomeroy, J.W., Kuball, M., Xiao, X., Mao, Y., Meng, B., Ma, G., and Yuan, C.: Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD, Proc. SPIE 12887 (2024) 1288705.

Gucmann, F., Hušeková, K., Rosová, A., Dobročka, E., Egyenes, F., Hrubišák, F., Keshtkar, J., Chouhan, H., Krettová, M., Eliáš, P., Nádaždy, P., Gregušová, D., Pohorelec, O., Kozak, A., and Ťapajna, M.: Gallium oxide for applications in electronics and optoelectronics. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 13-16. ISBN 978-80-554-2109-4.

Gucmann, F., Hušeková, K., Yuan, C., Xiao, X., Mao, Y., Meng, B., Ma, G., Rosová, A., Dobročka, E., Egyenes, F., Eliáš, P., and Ťapajna, M.: Phase-dependent phonon heat transport in thin-film gallium oxide. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 121-124. ISBN 978-80-554-2109-4.

Chouhan, H., Egyenes, F., Rosová, A., Hušeková, K., Dobročka, E., Nádaždy, P., Ťapajna, M., Xiao, X., Mao, Y., Meng, B., Ma, G., Yuan, C., and Gucmann, Filip.: Heteroepitaxial growth of (010) β-Ga2O3ON sapphire substrates using α-Ga2O3 template by liquid-injection MOCVD. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 73-76. ISBN 978-80-554-2109-4.

  • 2023

Egyenes, F., Gucmann, F., Rosová, A., Dobročka, E., Hušeková, K., Hrubišák, F., Keshtkar, J., and Ťapajna, M.: Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions, J. Phys. D: Appl Phys. 56 (2023) 045102.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.

Gucmann, F., Nádaždy, P., Hušeková, K., Dobročka, E., Priesol, J., Egyenes, F., Šatka, A., Rosová, A., and Ťapajna, M.: Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD, Mater. Sci Semicond. Process. 156 (2023) 107289.

Yuan, C., Mao, Y., Meng, B., Xiao, X., Hrubišák, F., Egyenes, F., Dobročka, E., Hušeková, K., Rosová, A., Eliáš, P., Keshtkar, J., Ťapajna, M., and Gucmann, F.: Thermal properties of Ga2O3 films and interfaces grown by MOCVD. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 36-39.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Material properties of MOCVD-grown β- and κ-Ga2O3 thin films on 4H-SiC substrates. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 87-90.

Ťapajna, M., Egyenes, F., Hrubišák, F., Hušeková, K., Dobročka, E., Nádaždy, P., Rosová, A., Chouhan, H., Keshtkar, J., and Gucmann., F.: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties. In: IMFEDK 2023: Inter. Meeting for Future of Electron Devices, Kansai. – IEEE, 2023, p. IN10. ISBN 979-8-3503-9378-1.

  • 2022

Hrubišák, F., Hušeková, K., Egyenes, F., Gucmann, F., Dobročka, E., Keshtkar, J., and Ťapajna, M.: Effects of repeated annealing in different atmospheres on surface morphology of ε-/κ-Ga2O3 grown on c-plane sapphire using LI-MOCVD method. In: ELITECH´22: 24th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Keshtkar, J., Gucmann, F., Hotový, I., Dobročka, E., Egyenes, F., and Ťapajna, M.: NiO thin films for solar-blind photodetectors:structure and electrical properties. In: ELITECH´22: 24th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Hrubišák, F., Hušeková, K., Egyenes, F., Rosová, A., Kubranská, A., Dobročka, E., Nádaždy, P., Keshtar, J., Gucmann, F., and Ťapajna, M.: Structural and electrical properties of Ga2O3 transistors grown on 4H-SiC substrates. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 115-118.

Egyenes, F., Gucmann, F., Dobročka, E., Mikolášek, M., Hušeková, K., and Ťapajna, M.: Transport properties of Si-doped ẞ-Ga2O3 grown by liquid-injection MOCVD. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 119-122.

Hrubišák, F., Egyenes, F., Dobročka, E., Gucmann, F., Hušeková, K., Keshtkar, J., and Ťapajna, M.: Growth and properties of Ga2O3 on 4H-SiC using liquid-injection MOCVD. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 47-50.

Keshtkar, J., Hotovy, I., Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes, F., Mikolášek, M., and Ťapajna, M.: NiO thin films for solar-blind photodetectors: structure and electrical properties. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 113-116.

  • 2021

Egyenes-Pörsök, F., Hušeková, K., Dobročka, E., Gucmann, F., and Ťapajna, M.: Optimization of Ohmic contact formation for αlpha-Ga2O3 epitaxial layers grown by MOCVD. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 91-94.

Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes-Pörsök, F., and Ťapajna, M.: Growth and properties of ε-Ga2O3 on sapphire substrates. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 63-66.

  • 2020

Egyenes-Pörsök, F., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.: Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002.

  • 2019

Ťapajna, M., Egyenes-Pörsök, F., Hasenöhrl, S., Blaho, M., Pohorelec, O., Vincze, A., Muška, M., Noga, P., and Gregušová, D.: Investigation of GaN P-N junction processed by Mg ion implantation. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 43-46.