RNDr. Štefan HAŠČÍK, PhD.

  • 2025

Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., and Konstantinidis, G.: Growth and performance of n++ GaN cap layer for HEMTs applications, Mater. Sci Semicond. Process. 185 (2025) 108959.

  • 2024

Kuzmík, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M.P., Kret, S., and Ruterana, P.: InN/InAlN heterostructures for new generation of fast electronics, J. Applied Phys. 135 (2024) 245701.

  • 2023

Šichman, P., Stoklas, R., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., Hashizume, T., Chvála, A., Šatka, A., and Kuzmík, J.: Vertical GaN transistor with semi-insulating channel, Physica Status Solidi (a) 220 (2023) SI2200776.

  • 2022

Stoklas, R., Šichman, P., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., and Kuzmík, J.:  Interface states analysis of Al2O3/GaN MOS capacitors with semi-insulating C-doped GaN. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 15-16.

Izsák, T., Kováčová, E., Vanko, G., Haščík, Š., Zehetner, J., Vojs, M., and Zaťko, B.: Optimization of mask material for deep reactive ion etching of GaAs structures. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 169-172.

  • 2021

Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

Gregušová, D., Dobročka, E., Eliáš, P., Stoklas, R., Blaho, M., Pohorelec, O., Haščík, Š., Kučera, M., and Kúdela, R.: GaAs nanomembranes in the high electron mobility transistor technology, Materials 14 (2021) 3461.

Stoklas, R., Chvála,, Šichman, P., Hasenöhrl, S., Haščík, Š., Priesol, J., Šatka, A., and Kuzmík, J.: Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels, IEEE Trans. Electron Dev. 68 (2021) 2365.

Gregušová, D., Pohorelec, O., Ťapajna, M., Blaho, M., Gucmann, F., Stoklas, R., Hasenöhrl, S., Laurenčíková, A., Šichman, P., Haščík, Š., and Kuzmík, J.: Polarization engineering in GaN-based normally-off transistors. In: 2021 Inter. Meeting for Future of Electron Devices – IMFEDK2021. Kansai, Virtual 2021. Invited. IEEE: 2021, p. 1-4. ISBN 978-1-6654-4200-8.

Šichman, P., Haščík, Š., Gregušová, D., Hasenöhrl, S., and Kuzmík, J.: Optimalization of SiCl4 – based reactive ion etching and nickel hard mask for GaN on GaN vertical structures. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 163-166.

  • 2020

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

  • 2019

Eliáš, P. and Haščík, Š.: Fabrication of nanocones by RIE on GaP, J. Phys.: Conf. Ser. 1319 (2019) 012017.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

  • 2018

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dinesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 2018 22nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

  • 2017

Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J., : Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Applied Phys. Lett. 111 (2017) 033506.

Graff, A., Simon-Najasek, M., Altmann, F., Kuzmík, J., Gregušová, D., Haščík, Š.,  Jung, J., Baur, T., Grunenputt, J., and Blanck, H.: High resolution physical analysis of ohmic contact formation at GaN-HEMT devices, Microelectron. Reliab. 76-77 (2017) 338.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107.

Huran, J., Balalykin, N., Boháček, P., Nozdrin, M., Kováčová, E., Kobzev, A., Haščík, Š., Sekáčová, M., Arbet, J., Ryzá, J., : PECVD silicon carbide films on quartz glass as prospective transmission photocathodes In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 150-153.

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Würfl, H., Kuzmík, J., : Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. Physica Status Solidi a 214 (2017) 1700407.

  • 2016

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

Huran, J., Balalykin, N., Haščík, Š., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Dry etching of phosphorus doped SiC thin films prepared by PECVD technology for transmission photocathode In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 35-38.

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211.

Laurenčíková, A., Lettrichová, I., Pudiš, D., Hasenöhrl, S., Šušlik, Ľ., Haščík, Š., Dérer, J., Novák, J., : Integration of fresnel structure on AlGaAs/GaAs led devices In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 179-182.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011.

Hotový, I., Haščík, Š., Predanocy, M., Mikolášek, M., Řeháček, V., Kostič, I., Nemec, P., Benčurová, A., Rossberg, D., Spiess, L., : The effect of process parameters and annealing on the properties of Ti/Pt films for miniature temperature sensors In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 85-88.

  • 2015

Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A., : Elimination of surface band bending on N-polar InN with thin GaN capping,. Applied Phys. Lett. 107 (2015) 191605.

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Benčurová, A., Nemec, P., Andok, R., Tomáška, M., : GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity. Sensors Actuators A 227 (2015) 55-62.

Hronec, P., Kuzma, A., Škriniarová, J., Kováč, J., Benčurová, A., Haščík, Š., Nemec, P., : Optical properties of LEDs with patterned 1D photonic crystal,. Proc. SPIE 9556 (2015) 95561A. (Not IEE SAS).

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090.

  • 2014

Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmík, J., : Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506.

Hotový, I., Haščík, Š., Gregor, M., Řeháček, V., Predanocy, M., Plecenik, A., : Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing. Vacuum 107 (2014) 20-22.

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Hashizume, T., Kuzmík, J., : Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations. J. Applied Phys. 116 (2014) 104501.

Kostič, I., Andok, R., Benčurová, A., Glezos, N., Haščík, Š., Konečníková, A., Nemec, P., Ritomský, A., Škriniarová, J., : Investigation of E-beam resits for structure patterning in the nanophotonic device fabrication In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 241-246.

Čičo, K., Adikimenakis, A., Mičušík, M., Haščík, Š., Georgakilas, A., Kuzmík, J., : Material and electrical properties of N-polar (GaN)/InN surfaces In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 271-274.

Hotový, I., Kostič, I., Haščík, Š., Řeháček, V., Predanocy, M., Benčurová, A., : Patterning of titanium oxide surfaces using inductively coupled plasma for gas sensing. Applied Surface Sci 312 (2014) 107-111.

Škriniarová, J., Andok, R., Benčurová, A., Nemec, P., Jakabovič, J., Haščík, Š., : Photonic structures patterned in AlGaAs/GaAs heterostructures by the EBDW lithography In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 196-199.

Hrkút, P., Andok, R., Benčurová, A., Nemec, P., Konečníková, A., Matay, L., Haščík, Š., : RIE plasma etching of GaAs in SiCl4 and CCl4 gases with different resists as etch masks. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 312-315.

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Nemec, P., Benčurová, A., Tomáška, M., : The GaN/SiC heterostructure-based hydrogen SAW sensor operating in GHz range. Procedia Engn. 87 (2014) 260-263.

  • 2013

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Kuzmík, J., : Bulk and interface trapping in the gate dielectric of GaN based metal–oxide–semiconductor high-electron mobility transistors. Applied Phys. Lett. 102 (2013) 243509.

Pudiš, D., Šušlik, Ľ., Škriniarová, J., Kováč, J., Kováč, J., Kubicová, I., Martinček, I., Haščík, Š., Schaaf, P., :Effect of 2D photonic structure patterned in the LED surface on emission properties,. Applied Surface Sci 267 (2013) 161-165.

Huran, J., Balalykin, N., Hotový, I., Šoltýs, J., Feshchenko, A., Haščík, Š., : GaAs mesh type transmission photocathode prepared by inductively oupled plasma CCl2F2 etching of GaAs substrate. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 233-236.

Blaho, M., Gregušová, D., Jurkovič, M., Haščík, Š., Fedor, J., Kordoš, P., Fröhlich, K., Brunner, F., Cho, E., Hilt, O., Würfl, H., Kuzmík, J., : Ni/Au-Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOSHEMTs. Microelectr. Engn. 112 (2013) 204-207.

Andok, R., Benčurová, A., Nemec, P., Hrkút, P., Matay, L., Konečníková, A., Škriniarová, J., Haščík, Š., : Photosensitive AZ 5214E resist used for e-beam lithography applications In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 50-53.

Jurkovič, M., Gregušová, D., Palankovski, V., Haščík, Š., Blaho, M., Čičo, K., Fröhlich, K., Carlin, J., Grandjean, N., Kuzmík, J., : Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region,. IEEE Electron Dev. Lett. 34 (2013) 432-434.

Hrkút, P., Haščík, Š., Matay, L., Kostič, I., Benčurová, A., Konečníková, A., Nemec, P., Andok, R., : Suitability of N2 plasma for the rie etching of thin Ag layers. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 54-57.

  • 2012

Pudiš, D., Kubicová, I., Škriniarová, J., Kováč, J., Jakabovič, J., Novák, J., Šušlik, Ľ., Haščík, Š., : 2D irregular structures patterning and analysis of LED by NSOM. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 167-170.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kubicová, I., Martinček, I., Novák, J., Haščík, Š., : 2D photonic structure with square symmetry in the GaAs/AlGaAs LED surface. In: Elektro 2012. Žilina: EF ŽU, 2012. ISBN 978-1-4673-1178-6. P. 523-526.

Ščepka, T., Gregušová, D., Gaži, Š., Haščík, Š., Fedor, J., Šoltýs, J., Kúdela, R., Cambel, V., : Detection elements for on-cantilever laboratory. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 91-94.

Pudiš, D., Šušlik, Ľ., Škriniarová, J., Kováč, J., Jakabovič, J., Kubicová, I., Kováč, J., Novák, J., Haščík, Š., : Effect of 2D PhC structure patterned in LED surface on emission properties. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 25-28.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Kubicová, I., Novák, J., Haščík, Š., : Emission and absorption properties of patterned LED with2D PhC. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 299-302.

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Molnár, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmík, J., : GaN/InAlN/AlN/GaN normally-off HEMT with etched access region. In: WOCSDICE-EXMATEC 2012.Eds. Y. Cordier and J.-Y. Duboz. Island of Porquerolles: CRHEA & CNRS 2012.

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Čičo, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmík, J., : Polarization engineered normally-off GaN/InAlN/AlN/GaN HEMT In: Inter. Workshop on Nitride Semicond. 2012 – IWN. Sapporo 2012..

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., Kováčová, E., :Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307.

  • 2011

Hotový, I., Kostič, I., Haščík, Š., Řeháček, V., Liday, J., Sitter, H., : Development and fabrication of TiO2 tip arrays for gas sensing, J. Electrical Engn. 62 (2011) 363-366.

Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I., : Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs. Microelectr. Engn. 88 (2011) 166-169.

Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M., : Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor. Sensors Actuators A 172 (2011) 386-391.

Pudiš, D., Šušlik, Ľ., Škriniarová, J., Kováč, J., Martinček, I., Kováč, J., Haščík, Š., Kubicová, I., Novák, J., Veselý, M., : Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM. Optics Laser Technol. 43 (2011) 917-921.

Valovič, A., Huran, J., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., : Nanocrystalline silicon carbide thin films prepared by plasma enhanced chemical vapor deposition Acta Technica 56 (2011) T291-T298.

Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M., :Piezoelectric response of AlGaN/GaN-based circular-HEMT structures. Microelectr. Engn. 88 (2011) 2424-2426.

  • 2010

Lalinský, T., Rýger, I., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : AlGaN/GaN based SAW-HEMT structures for chemical gas sensors, Procedia Engn. 5 (2010) 152-155.

Vallo, M., Lalinský, T., Vanko, G., Držík, M., Haščík, Š., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT for piezoelectric MEMS stress sensor appliocations. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 56-59.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures. Applied Surface Sci 257 (2010) 1254-1256.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures. Microelectr. Engn. 87 (2010) 2208-2210.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., Kordoš, P., Donoval, D., Kinder, R., Tomáška, M., : Electrical properties of Al0,3Ga0,7N/GaN heterostructure field effect transistor. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 205-209.

Hotový, I., Tengeri, A., Řeháček, V., Haščík, Š., Lalinský, T., : Gas sensing micromachined structure based on gallium arsenide. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 72-75.

Hotový, I., Tengeri, A., Řeháček, V., Haščík, Š., Lalinský, T., : Gas sensing micromachined structure based on gallium arsenide. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 72-75.

Rýger, I., Lalinský, T., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : HEMT-SAW structures for chemical gas sensors in harsh environment In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 131-134.

  • 2009

Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT. Vacuum 84 (2009) 235-237.

Florovič, M., Kováč, J., Škriniarová, J., Donoval, D., Kordoš, P., Paszkiewicz, R., Tlaczala, M., Lalinský, T.,Haščík, Š., : Influence of off-state stress on electrical properties of Al0,19Ga0,81N/GaN heterostructure field effect transistor. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 45-48.

Pudiš, D., Škriniarová, J., Martinček, I., Kováč, J., Tarjányi, N., Haščík, Š., : Periodic structures patterned on metal and III-V compound surfaces using two-beam interference method, J. Electr. Engn. 60 (2009) 166-169.

>Lalinský, T., Rýger, I., Rufer, L., Vanko, G., Haščík, Š., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure. Vacuum 84 (2009) 231-234.

Jacko, V., Schlosser, P., Roch, T., Zahoran, M., Kúš, P., Plecenik, A., Haščík, Š., : Thin-layer bolometric structures. In: Proc. 17th Conf. Slovak Physicists. Ed. M. Reiffers. Bratislava: Slovak Phys. Soc., 2009. ISBN 978-80-969124-7-6. P. 137-138.

  • 2008

Lalinský, T., Rufer, L., Vanko, G., Mir, S., Haščík, Š., Mozolová, Ž., Vincze, A., Uherek, F., : AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors. Applied Surface Sci 255 (2008) 712-714.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., Kordoš, P., Donoval, D., Uherek, F., : Electrical properties of Al0.3Ga0.7N/GaN heterostructure field effect transistor. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 61-64.

Florovič, M., Kováč, J., Kordoš, P., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., Donoval, D., Uherek, F., : Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 103-106.

Lalinský, T., Držík, M., Jakovenko, J., Vanko, G., Mozolová, Ž., Haščík, Š., Chlpík, J., Hotový, I., Řeháček, V., Kostič, I., Matay, L., Husák, M., : GaAs based micromachined thermal converter for gas sensors. Sensors Actuators A 142 (2008) 147-152.

Hotový, I., Řeháček, V., Mika, F., Lalinský, T., Haščík, Š., Vanko, G., Držík, M., : Gallium arsenide suspended microheater for MEMS sensor arrays Microsyst. Technol. 14 (2008) 629-635.

Vanko, G., Lalinský, T., Tomáška, M., Haščík, Š., Mozolová, Ž., Škriniarová, J., Kostič, I., Vincze, A., Uherek, F., : Impact of SF6 plasma on DC and microwave performance of AlGaN/GaN HEMT structures. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 335-338.

Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., Kostič, I., :Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN. Vacuum 82 (2008) 193-196.

Tengeri, A., Pullmannová, A., Hotový, I., Řeháček, V., Haščík, Š., Lalinský, T., : Preparation and properties of micro-hotplates for gas sensors based on GaAs. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 323-326.

Schlosser, P., Vargova, M., Kubinec, M., Haščík, Š., Roch, T., Plecenik, A., Plesch, G., Hotový, I., : Preparation of micromaschined Gas sensor on thin membranes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 199-200.

Haščík, Š., Hotový, I., Lalinský, T., Vanko, G., Řeháček, V., Mozolová, Ž., : Preparation of thin GaAs suspended membranes for gas microsensors using plasma etching. Vacuum 82 (2008) 236-239.

Lalinský, T., Rufer, L., Vanko, G., Rýger, I., Haščík, Š., Tomáška, M., Mozolová, Ž., Vincze, A., : Surface acoustic wave excitation on SF6 plasma treated AlGaN/GaN heterostructure. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 311-314.

Lobotka, P., Lalinský, T., Španková, M., Vávra, I., Chromik, Š., Haščík, Š., Šmatko, V., Mozolová, Ž., Kováčová, E., Dérer, J., Gaži, Š., and Gierlowski, P.: Antenna-coupled uncooled THz microbolometer based on micromachined GaAs and LSMO thin film. In IEEE Sensors 2008. Lecce, pp. 604-607.

  • 2006

Haščík, Š., Eliáš, P., Šoltýs, J., Martaus, J., Hotový, I., : CCl4-based reactive ion etching of semi-insulating GaAs and InP. Czechoslov. J. Phys. B 56 (2006) S1169-S1173.

Eliáš, P., Haščík, Š., Martaus, J., Kostič, I., Šoltýs, J., Hotový, I., : CCl4-based RIE pattern transfer into facets of mesas formed by wet etching in InP(100). Electrochem. Solid-State Lett. 9 (2006) G27-G30.

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Haščík, Š., Sekáčová, M., Huran, J., : Investigation of etched trenches in technology of LEG semi-insulating GaAs monolithic linear detector array. Nuclear Physics B – Proc. Suppl. 150 (2006) 194-199.

Luby, Š., Chitu, L., Majková, E., Senderák, R., Kostič, I., Hrkút, P., Matay, L., Haščík, Š., Lalinský, T., Capek, I., Šatka, A., : Microelectromagnetic matrix for local assembling of magnetic nanoparticles. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 7-10.

Lalinský, T., Vanko, G., Grujbár, M., Mozolová, Ž., Haščík, Š., Kostič, I., : Nb-Ti/Al/Ni/Au ohmic metallic system to AlGaN/GaN. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 151-154.

Hotový, I., Donoval, D., Huran, J., Haščík, Š., Spiess, L., Gubisch, M., Capone, S., : NiO nanostructured films with Pt coating prepared by magnetron sputtering Czechoslov. J. Phys. B 56 (2006) S1192-S1198.

Rehakova, A., Tengeri, A., Hotový, I., Lalinský, T., Řeháček, V., Spiess, L., Romanus, H., Haščík, Š., : Preparation and characterization of microhotplate for Gas sensors. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 279-282.

  • 2005

Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., Kordoš, P., : Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.

Lalinský, T., Držík, M., Chlpík, J., Krnáč, M., Haščík, Š., Mozolová, Ž., Kostič, I., : Thermo-mechanical characterization of micromachined GaAs-based thermal converter using contactless optical methods. Sensors Actuators 123-124 (2005) 99-105.

  • 2004

Haščík, Š., Lalinský, T., Krnáč, M., Mozolová, Ž., Matay, L., Hrkút, P., Hotový, I., : Polyimide-fixed GaAs island structure prepared using plasma etching technique Czechoslov. J. Phys. 54 (2004) Suppl. C1001-1005.

Hrkút, P., Držík, M., Mozolik, M., Kováč, P., Haščík, Š., Piller, W., Platzgumer, E., Löschner, H., : The influence of ion beam bombardment on the stress of carbon layers prepared by RF magnetron sputtering. Vacuum 76 (2004) 329-333.

Lalinský, T., Držík, M., Chlpík, J., Krnáč, M., Haščík, Š., Mozolová, Ž., : Thermo-mechanical characterization of micromachined GaAs based thermal converter using contactless optical methods. In: Eurosensors XVIII. Roma 2004. P. 239.

Kuzmík, J., Konstantinidis, G., Harasek, S., Haščík, Š., Bertagnolli, E., Georgakilas, A., Pogany, D., :ZrO2/(Al)GaN metal–oxide–semiconductor structures: characterization and application. Semiconductor Sci Techn. 19 (2004) 1364-1368.

Kuzmík, J., Harasek, S., Konstantinidis, G., Haščík, Š., Pogany, D., Bertagnolli, E., Georgakilas, A., : ZrO2/GaN metal oxide semiconductor structures characterization and application. In: 28th Workshop Compound Semicond. Devices Integrated Circuits. Eds. D.Pogany and A.Vincze. Bratislava: FEEIT STU 2004. P. 35-36.

  • 2003

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Krnáč, M., Tomáška, M., Škriniarová, J., Držík, M., Kostič, I., Matay, L., : Mechanically fixed and thermally insulated micromechanical structures for GaAs heterostructure based MEMS devices Microelectronics Inter. 20 (2003) 43-47.

Lalinský, T., Krnáč, M., Haščík, Š., Mozolová, Ž., Matay, L., Kostič, I., Hrkút, P., Jakovenko, J., Husák, M., : Micromechanical thermal converter device based on polyimide-fixed island structure Inter. J. Computational Engn. Sci 4 (2003) 543-546.

Lalinský, T., Krnáč, M., Haščík, Š., Mozolová, Ž., Matay, L., Kostič, I., Hrkút, P., Andok, R., Držík, M., Chlpík, J., : Micromechanical thermal converter device based on polyimide-fixed island structure. In: MME 2003. Delft: TUDelft, 2003. ISBN 90-808266-1-8. P. 45-48.

  • 2002

Lalinský, T., Držík, M., Tomáška, M., Krnáč, M., Haščík, Š., Mozolová, Ž., Klasovity, M., Kostič, I., : Coplanar waveguides supported by InGaP and GaAs/AlGaAs membrane-like bridges. J. Micromechanics Microengn. 12 (2002) 465-469.

Pogany, D., Kuzmík, J., Darmo, J., Litzenberger, S., Bychikhin, S., Unterrainer, K., Mozolová, Ž., Haščík, Š., Lalinský, T., Gornik, E., : Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. Microelectron. Reliability 42 (2002) 1673-1677.

Lalinský, T., Držík, M., Matay, L., Kostič, I., Mozolová, Ž., Haščík, Š., Krajcer, A., : GaAs cantilever and bridge membrane-like structures fully compatible with AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs based HFETs. In: Materials & process integration for MEMS. Ed. F.E.H. Tay. Boston: Kluwer Acad. Publ. 2002. ISBN: 1-4020-7175-2. P. 53-79.

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Tomáška, M., Krnáč, M., Škriniarová, J., Držík, M., Kostič, I., Matay, L., : Mechanically fixed and thermally isolated micromechanical structures for GaAs heterostructures based MEMS devices. In: Inter. Symp. Microelectr. 2002. Ed. J.R. Drehle. Denver: IMAPS 2002. ISBN 0-930815-66-1. P. 87.

Tomáška, M., Krnáč, M., Klasovity, M., Lalinský, T., Mozolová, Ž., Haščík, Š., Kostič, I., : Micromachined coplanar waveguide on GaAs Based HFET heterostructures. In: MIKON 02. Vol. 3. Gdansk: 2002. P. 825-828.

Tomáška, M., Krnáč, M., Klasovity, M., Lalinský, T., Mozolová, Ž., Haščík, Š., Kostič, I., : Micromachined coplanar waveguide on GaAs Based HFET heterostructures. In: MIKON 02. Vol. 3. Gdansk: 2002. P. 825-828.

Haščík, Š., Mozolová, Ž., Lalinský, T., Tomáška, M., Kostič, I., : Patterning of a micromechanical coplanar waveguide using a dry etching technique. Vacuum 69 (2002) 283-287.

Hotový, I., Huran, J., Spiess, L., Liday, J., Sitter, H., Haščík, Š., : The influence of process parameters and annealing temperature on the physical properties of sputtered NiO thin films. Vacuum 69 (2002) 237-242.

  • 2001

Lalinský, T., Držík, M., Tomáška, M., Kostič, I., Matay, L., Mozolová, Ž., Haščík, Š., : Coplanar waveguide supported by InGaP membrane-like bridge. In: MME’01. 2001. P. 273.

Kuzmík, J., Hasenöhrl, S., Kúdela, R., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., Kordoš, P., : InGaAs/InGaP HEMTs: technological optimization and analytical modelling. Vacuum 61 (2001) 333-337.

Lalinský, T., Matay, L., Burian, E., Mozolová, Ž., Haščík, Š., Kostič, I., Držík, M., : InGaP/polyimide membrane-like bridges fully compatible with InGaP/InGaAs/GaAs based HFETs. In: MEMS Workshop 2001. Singapore: Nation. Univ. Singapore 2001. P. 362-368.

Lalinský, T., Matay, L., Haščík, Š., Mozolová, Ž., : Lalinský, T., Matay, L., Haščík, Š., and Mozolová, Ž.: Method of mechanical fixation and thermal insulation of micro(nano)mechanical structures of semiconductor based microsystems. Slov. Patent Appl. 2001. No. 1799-2001.

Jakovenko, J., Husák, M., Lalinský, T., Matay, L., Haščík, Š., Mozolová, Ž., : MEMCAD thermal simulation of GaAs based membrane bridge. In: MME’01. 2001. P. 186.

Tomáška, M., Lalinský, T., Krnáč, M., Klasovity, M., Mozolová, Ž., Haščík, Š., Kostič, I., : Micromechanical coplanar waveguide compatible with pseudomorphic AlGaAs/InGaAs/GaAs based HFETs. In: EDMO 2001. Vienna: TU Vienna, 2001. P. 211.

Haščík, Š., Mozolová, Ž., Lalinský, T., Tomáška, M., Kostič, I., : Pattering of micromechanical coplanar wavequide (MCPW) using dry etching technique. In: 12th Int. School VEIT 01. Varna 2001. P. 67.

Lalinský, T., Škriniarová, J., Kostič, I., van der Hart, A., Hrkút, P., Haščík, Š., Matay, L., Mozolová, Ž., Kordoš, P., : T-shaped gates for heterostructure field effect transistors. Vacuum 61 (2001) 329-332.

Lalinský, T., Škriniarová, J., Kuzmík, J., Hasenöhrl, S., Fox, A., Tomáška, M., Mozolová, Ž., Kordoš, P., Kovačik, T., Haščík, Š., : Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs. Vacuum 61 (2001) 323-327.

  • 2000

Haščík, Š., Hrkút, P., Kostič, I., Konečníková, A., : Dry etching of carbon layers in various etch gases. Vacuum 58 (2000) 434-439.

Huran, J., Hotový, I., Haščík, Š., Kobzev, A., Balalykin, N., : Investigation of radiation damage in N doped a-SiC : H films annealed by pulsed electron beam. Vacuum 58 (2000) 428-433.

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : Performance of GaAs micromachined microactuator. Sensors Actuators A 85 (2000) 365-370.

Hotový, I., Huran, J., Spiess, L., Čapkovic, R., Haščík, Š., : Preparation and characterization of NiO thin films for gas sensor applications. Vacuum 58 (2000) 300-307.

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., : Thermal actuation of a GaAs cantilever beam J. Micromechanics Microengn. 10 (2000) 293-298.

  • 1999

Lalinský, T., Burian, E., Držík, M., Kuzmík, J., Haščík, Š., Mozolová, Ž., : GaAs cantilever based thermally excited microactuator. In: MME ’99. Orsay: Inst. d’Electronique Fondamentale, 1999. P. 219-222.

Hotový, I., Huran, J., Haščík, Š., Srnánek, R., : Characterization of magnetron sputtering process of nickel oxide by using flow modulation of oxygen . In: Proc. 14th Int. Symp. Plasma Chemistry. Vol. III. Prague: IPP AS CR 1999. P. 1579.

Hotový, I., Huran, J., Spiess, L., Haščík, Š., Řeháček, V., : Preparation of nickel oxide films for gas sensors applications Sensors Actuators B 57 (1999) 147-152.

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Držík, M., : The improved performance of GaAs micromachined power sensor microsystem Sensors Actuators A 76 (1999) 241-246.

  • 1998

Lalinský, T., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : GaAs power sensor microsystem technology and characterization Sensors Mater. 10 (1998) 241.

Hotový, I., Búc, D., Haščík, Š., Nennewitz, O., : Characterization of NiO thin films deposited by reactive sputtering Vacuum 50 (1998) 41.

Lalinský, T., Haščík, Š., Mozolová, Ž., Držík, M., Hatzopoulos, Z., : Micro-machined power sensor microsystem. In: MME 98. Eds. P.Ohlchers et el. Ulwik: 1998. P. 139-142.

Lalinský, T., Hrkút, P., Matay, L., Kostič, I., Haščík, Š., Hudek, P., : Nanometer T-gates based on polysilicon/polyimide supported layers. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 183.

Hotový, I., Řeháček, V., Janík, J., Srnánek, R., Huran, J., Haščík, Š., Kubenka, J., Spiess, L., : Nickel oxide films for gas sensor applications. In: NEXUSPAN. Eds. R.Ivanič and V.Tvarožek. Bratislava: STU 1998. P. 87.

Haščík, Š., Lalinský, T., Mozolová, Ž., Kuzmík, J., : Patterning of cantilever for power sensor microsystem Vacuum 51 (1998) 307.

Búc, D., Hotový, I., Haščík, Š., Červeň, I., : Reactive unbalanced magnetron sputtering of AlN thin films Vacuum 50 (1998) 121.

Hotový, I., Huran, J., Haščík, Š., Lalinský, T., : Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability Vacuum 50 (1998) 403.

Burian, E., Pogany, D., Lalinský, T., Haščík, Š., Mozolová, Ž., : Simulation and characterisation of thermal properties of GaAs micromachined power sensor microsystem. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 281.

Lalinský, T., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : Study of bimetallic efekt in GaAs cantilever beam of power sensor microsystem. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 331.

Lalinský, T., Držík, M., Šišolák, J., Haščík, Š., Mozolová, Ž., Burian, E., Hatzopoulos, Z., : Study of thermal effects in a GaAs power sensor microsystems. In: NEXUSPAN. Eds. V.Szekely et al. Budapest: 1998. P. 170.

Lalinský, T., Haščík, Š., Mozolová, Ž., Držík, M., Hatzopoulos, Z., : The improved performance of a GaAs micromachined power sensor microsystem. In: EUROSENSORS XII. Ed. N.M.White. Vol. 1. Bristol: IOP Publ, 1998. P. 739.

Lalinský, T., Hotový, I., Haščík, Š., Mozolová, Ž., Kuzmík, J., Pogany, D., : Thin films resistence temperature sensor on GaAs. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 243.

Burian, E., Lalinský, T., Pogany, D., Haščík, Š., Mozolová, Ž., : Using semi-analytical solution to heat flow eguation in gaseous environment to obtain ambient-dependent thermal characteristics of a PSM cantilever beam. In: NEXUSPAN. Eds. V.Szekely et al. Budapest: 1998. P. 55-58.

  • 1997

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Kuzmík, J., : Micromachined power sensor microsystems based on GaAs cantilever beams, Nexus Academic Newslett. (1997) 13.

Kuzmík, J., Darmo, J., Kúdela, R., Haščík, Š., Mozolová, Ž., : Schottky contacts on reactive-ion etched InGaP J. Vacuum Sci Technol. B 15 (1997) 2016.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in GaAs power sensor microsystem technology and simulation. In: MICROSIM II: Simulation and Design of Microsystems and Microstructures. Eds. R.A.Adey and P.Renaud. Southamton: Comput. Mechan. Publ. 1997. ISBN-13: 978-1853125010. P. 43-51.

  • 1996

Haščík, Š., Lalinský, T., Kuzmík, J., Porges, M., Mozolová, Ž., : Fabrication of thin GaAs cantilever beams for power sensor microsystem by RIE Vacuum 47 (1996) 1215-1217.

Lalinský, T., Kuzmík, J., Haščík, Š., Mozolová, Ž., Hatzopoulos, Z., : GaAs power sensor microsystem technology and characterization. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 301.

Kuzmík, J., Darmo, J., Haščík, Š., Kúdela, R., Mozolová, Ž., : Study of Schottky contact formation on RIE-etched InGaP. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 9.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in a GaAs power sensor microsystem technology and simulation. In: MICROSIM II. Ed. R.A.Adey. Southampton: Comput. Mechanics Publ. 1996. P. 43-51.

Lalinský, T., Kuzmík, J., Porges, M., Haščík, Š., Mozolová, Ž., Grno, L., : Monolithic GaAs MESFET power sensor microsystem Electron. Lett. 31 (1995) 1914.

  • 1994

Haščík, Š., Horniaková, A., Huran, J., : Silicon trench etching multifrequency discharge reactor Vacuum 45 (1994) 915.

  • 1993

Horniaková, A., Huran, J., Haščík, Š., : Etching of GaAs in a multi-frequency discharge reactor Physica Status Solidi A 136 (1993) 93.

Haščík, Š., : Characterization of multi-frequency discharges in CCl2F2 by optical emission actinometry. In: Proc. 16th Symp. Plasma Phys. Technol. Praha: 1993. P. 320.

Horniaková, A., Huran, J., Haščík, Š., : Use of a CCl2F2/H2 plasma plasma for the reactive ion etching of GaAs Vacuum 44 (1993) 123.

  • 1992

Huran, J., Horniaková, A., Haščík, Š., : Deep plasma etching of Si in a CBrF 3 plasma through a submicron single layer electron-beam litographic mask Physica Status Solidi A 132 (1992) K81.

Lányi, L., Haščík, Š., : RF glow discharges intensity of spectral lines in Ar/CBrF3 mixtures. In: Proc. 10th Inter. Conf. Gas Discharges Their Appl. Ed. W.T.Williams. Swansea: 1992. P. 772.

  • 1991

Wöhl, G., Haščík, Š., : Characterization of a trench etching process using CBrF3 and optimal emission spectroscopy of the plasma Crystal Res. Technol. 26 (1991) 717.

Haščík, Š., Horniaková, A., Huran, J., : Influence of frequency of rf discharge on reactive ion etching of trench structures, Acta Physica Slovaca 41 (1991) 374.

Handke, R., Haščík, Š., Huran, J., : Plasma etching of deep Si-trencheswith CBrF3 and dilutions Acta Phys. Slovaca 41 (1991) 122.

Lányi, L., Haščík, Š., : Spatio-temporal measurements in low frequency discharge through Ar and CBrF3. In: Proc. Pentagonale Workshop Element. Process. Clusters, Lasers and Plasmas. Innsbruck 1991. P. 354.

  • 1990

Lányi, L., Haščík, Š., : Time resolved study of CBr3 and Ar RF plasmas at 15 kHz. In: 8th Symp. Chem. Reactions Elementary Process. Low Temp. Plasmas. Stará Lesná: 1990. P. 27.

Lányi, L., Haščík, Š., : Time resolved study of CBrF3 plasma. In: ESCAMPIG 90. Ed. K.Bethge. Orleans: EPS 1990. P. 318.

  • 1987

Mates, P., Guldan, A., Haščík, Š., Bugár, Š., : An etalon for checking the styles of contact profilometers (in Slovak), Jemná mechanika a optika 4 (1987) 105.

Lalinský, T., Mozolová, Ž., Haščík, Š., Guldan, A., Porges, M., Kuzmík, J., : Využitie plazmového leptania v technológii GaAs MESFET štruktúr. In: 6. čs. konf. o tenkých vrstvách 1987. Ed. Z.Hájek. Praha: JČSMF 1987. S. 92.