RNDr. Pavol BOHÁČEK, CSc.

  • 2024

Kurucová, N., Šagátová, A., Pavlovič, M., Zaťko, B., Kováčová, E., Boháček,  P., Škriniarová, J., and Predanocy, M.: Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles, J. Instrument. 19 (2024) C03049.

  • 2023

Zaťko, B., Hrubčín, L., Boháček, P., Gurov, Y.B., Rozov, S.V., Evseev, S.A., Bulavin, M.V., Zamiatin, N.I., Kopylov, Y.A., Sekáčová, M., and Kováčová, E.: Spectrometric performance of 4H-SiC detectors after neutron irradiation, AIP Conf. Proc. 2778 (2023) 060012.

Kotorová, S., Šagátová, A., Vanko, G., Boháček, P., and Zaťko, B.: Effect of thermal annealing on 4H-SiC radiation detector, AIP Conf. Proc. 2778 (2023) 060004.

  • 2022

Gurov, J.B., Evseev, S.A., Zamyatin, N.I., Kopylov, Y.,A., Rozov, S.V., Sandukovsky, V.G., Streletskaia, E.A., Hrubčín, L., Zaťko, B., and Boháček, P.: Radiation Resistance of SiC Detectors after Neutron Irradiation, Phys. Particl. Nuclei Lett.19 (2022) 740-743.

Zaťko, B., Šagátová, A., Gál, N., Novák, A., Osvald, J., Boháček, P., Polansky, Š., Jakůbek, J., and Kováčová, E.: From a single silicon carbide detector to pixelated structure for radiation imaging camera, J. Instrum. 17 (2022) C12005.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., and Kobzev, A.P.: Amorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices, Current Applied Phys. 34 (2022) 101-106.

  • 2021

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: The study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Ivanov, O.M., Sekáčová, M., Kováčová, E., Gurov, Y.B., and Skuratov, V.A.: Study of the pulse height defect of 4H-SiC Schottky barrier detectors in heavy ion detection, AIP Conf. Proc. 2411 (2021) 070007.

  • 2020

Zaťko, B., Šagátová, A., Zápražný, Z., Boháček, P., Sekáčová, M., Kováčová, E., Žemlička, J., Jakůbek, J., Korytár, D., Gál, N., and Nečas, V.: Study of the contrast resolution of Timepix detector with a semi-insulating GaAs sensor, J. Instrument. 15 (2020) C04004.

Zaťko, B., Šagátová, A., Hrubčín, L., Boháček, P., Kováčová, E., and Gurov, Y. B.: The Schottky barrier detectors based on 4H-SiC epitaxial layer. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 143-146.

Dubecký, F., Hubík, P., Vanko, G., Zaťko, B., Boháček, P., Sekáčová, M., Šagátová, A., and Nečas, V.: Investigation of Mg contact on SI-GaAs. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 147-151.

  • 2019

Huran, J., Boháček, P., Perný, M., Mikolášek, M., Skuratov, V.A., Kobzev, A.P., Šály, V., and Arbet, J.: Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films, J. Phys.: Conf. Ser. 1319 (2019) 012016.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Role of contacts in metal/semi-insulating GaAs/metal structures: symmetrical geometry, AIP Conf. Proc. 2131 (2019) 020010.

Zaťko, B., Hrubčín, L., Boháček, P., Osvald, J., Šagátová, A., Sekáčová, M., Kováčová, E., and Nečas, V.: Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer, AIP Conf. Proc. 2131 (2019) 020054.

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023.

Huran, J., Hrubčín, L., Boháček, P., Skuratov, V.A., Kleinová, A., Sasinková, V., Kobzev, A.P., and Kováčová, E.: The effect of Xe ion irradiation on the properties of SiC(P) and SiC(B) film prepared by PECVD technology. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 155-160.

Hrubčín, L., Gurov, J.B., Zaťko, B., Boháček, P., Rozov, S.V., Rozov, I.E., Sandukovskij, V.G., a Skuratov, V.A.: The amplitude defect of SiC detectors during the recording of accelerated Xe ions, Yadernaya Fizika i Inzhiniring 10 (2019) no. 3, Phys. Atomic Nuclei 82 (2019) 1682-1685.

  • 2018

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., Boháček, P., and Sekáčová, M.: Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detector covered by LiF film for thermal neutron detection, Applied Surface Sci 461 (2018) 242-248.

Šagátová, A., Zaťko, B., Nečas, V., Sedláčková, K., Boháček, P., Fülöp, M., and Pavlovič, M.: Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons, J. Instrument. 13 (2018) C01006.

Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M Korytár, D., Nečas, V., Žemlička, J., Mora, Y., and Pichotka, M.: Imaging performance of Timepix detector based on semi-insulating GaAs, J. Instrument. 13 (2018) C01034.

Zaťko, B., Kubanda, D., Žemlička, J., Šagátová, A., Zápražný, Z., Boháček, P., Nečas, V., Mora, Y., Pichotka, M., and Dudák, J.: First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size, J. Instrument. 13 (2018) C02013.

Balalykin, N.I., Huran, J., Nozdrin, M.A., Feshchenko, A.A., Kobzev, A.P., Sasinková, V., Boháček, P., and Arbet, J.: Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications, J. Phys.: Conf. Ser. 992 (2018) 012031.

Šagátová, A., Zaťko, B., Kubanda, D., Boháček, P., Sekáčová, M., and Nečas, V.: Optimization of X-ray imaging by Timepix based radiation camera with SI GaAs sensor, AIP Conf. Proc. 1996 (2018) 020039.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Sekáčová, M., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Study of metal/semi-insulating GaAs/metal contacts: symmetrical geometry. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 17-20.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Sekáčová, M., and Arbet, J.: Amorphous silicon carbide films wit wide range of phosphorus concentration: Structural and electrical properties. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 216-219. ISBN 978-80-554-1450-8.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 39-42.

Kubanda, D., Zaťko, B., Žemlička, J., Šagátová, A., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 121-124.

Šagátová, A., Zaťko, B., Kubanda, D., Boháček, P., Sekáčová, M., and Nečas, V.: Optimal irradiation geometry for Timepix imaging detector with GaAs sensor compared with Si based sensor. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 149-152.

  • 2017

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., Mudroň, J., : A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization. Applied Surface Sci 395 (2017) 131-135.

Zaťko, B., Hrubčín, L., Sedlačková, K., Boháček, P., Šagátová, A., Sekáčová, M., Arbet, J., Skuratov, V., Nečas, V., : High energy ion detection using 4H-SiC semiconductor detector In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 154-157.

Huran, J., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Arbet, J., Kováčová, E., Sekáčová, M., : PECVD silicon carbide films for electromagnetic energy absorption in the 0.1-2.0THz frequency range In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 203-206.

Huran, J., Balalykin, N., Boháček, P., Nozdrin, M., Kováčová, E., Kobzev, A., Haščík, Š., Sekáčová, M., Arbet, J., Ryzá, J., : PECVD silicon carbide films on quartz glass as prospective transmission photocathodes In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 150-153.

Huran, J., Boháček, P., Hrubčín, L., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Kováčová, E., Arbet, J., : PECVD silicon carbide thin films for harsh environment applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 215-218.

Dubecký, F., Hubík, P., Kindl, D., Gombia, E., Boháček, P., Sekáčová, M., Nečas, V., : Study of Mg contact on semi-insulating GaAs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 158-162.

  • 2016

Szundiová, B., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Electrical and detection properties of bulk semi-insulating GaAs detectors. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 275-278.

Dubecký, F., Vanko, G., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., : Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 219-222.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Boháček, P., : Optimization of SI GaAs detector for thermal neutron detection In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 23-26.

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144.

Dubecký, F., Oswald, J., Kindl, D., Hubík, P., Dubecký, M., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts. Solid-State Electr. 118 (2016) 30-35.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., Nečas, V., :Radiation detector based on 4H-SiC used for thermal neutron detection. J. Instrument. 11 (2016) C11022.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Hrubčín, L., Arbet, J., Sekáčová, M., : Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 215-219.

Šagátová, A., Zaťko, B., Sedlačková, K., Boháček, P., Fülöp, M., Kubanda, M., Nečas, V., : Spectrometric properties of semi-insulating GaAs detectors irradiated by 5 MeV electrons at different dose rates. J. Instrument. 11 (2016) C12078.

Zaťko, B., Šagátová, A., Boháček, P., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., : The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs. J. Instrument. 11 (2016) C01076.

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Arbet, J., Nečas, V., : The thermal neutron detection using 4H-SiC detectors with 6LiF conversion layer. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 37-41.

Dubecký, F., Hubík, P., Kindl, D., Gombia, E., Boháček, P., Sekáčová, M., Nečas, V., : Unexpected current lowering of Mg contact on SI-GaAs. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 188-192.

  • 2015

Huran, J., Mikolášek, M., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Sekáčová, M., Arbet, J., : HWCD technology of silicon carbide thin films: properties In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 104-107. (APVV 0443-12). (APVV 0321-11). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

Boháček, P., Zaťko, B., Šagátová, A., Hybler, P., Sekáčová, M., : Influence of 5 MeV electron irradiation on galvanomagnetic parameters of semi-insulating GaAs In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 234-237.

Dubecký, F., Kindl, D., Hubík, P., Oswald, J., Mičušík, M., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., Šagátová, A., : Peculiarities of metal contacts on semi-insulating GaAs: electrical, photoelectronic and XPS characterization In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 216-220.

Huran, J., Boháček, P., Kučera, M., Kleinová, A., Sasinková, V., : Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons,. Bull. American Phys. Soc 60 (2015) IW.00005.

Huran, J., Boháček, P., Kobzev, A., Kleinová, A., Sasinková, V., Sekáčová, M., Arbet, J., : Plasma-enhanced chemical vapour deposition of B-doped silicon carbide thin films for heterojunction application. In: 22nd Inter. Symp. on Plasma Chemistry. Antwerpy 2015. Proc. Extend. Abstracts P-III-6-22.

Sasinková, V., Huran, J., Kleinová, A., Boháček, P., Arbet, J., Sekáčová, M., : Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment,. Proc. SPIE 9563 (2015) 95630V.

Dubecký, F., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., : Role of the metal contact in electrical transport through M/S-GaAs/M structures In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 112-115.

Dubecký, F., Kindl, D., Osvald, J., Hubík, P., Micusik, M., Boháček, P., Sekáčová, M., Gombia, E., Šagátová, A., : Study of novel metal contacts on semi-insulating GaAs: electrical, photoelectronic and XPS characterization. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 42-43.

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : The effect of high-energy electrons irradiation on the current-voltage characteristics of Schottky barriers detectors based on semi-insulating GaAs In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 154-157.

Huran, J., Hrubčín, L., Boháček, P., Borzakov, S., Skuratov, V., Kobzev, A., Kleinová, A., Sasinková, V., : The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. P. 399-403.

  • 2014

Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 65-68.

Boháček, P., Zaťko, B., Šagátová, A., Hybler, P., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 45-48.

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Fülöp, M., Boháček, P., Nečas, V., : GaAs detectors irradiated by electrons at different dose rates. J. Instrument. 9 (2014) C12050.

Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., Mudroň, J., : Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 214-218.

Huran, J., Kleinová, A., Sasinková, V., Kobzev, A., Boháček, P., Sekáčová, M., Arbet, J., : Plasma enhanced chemical vapor deposition of low-k a-SiC:H thin films:FTIR study of chemical bonding In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 168-171.

Huran, J., Boháček, P., Kulikov, S., Bulavin, M., Sasinková, V., Kleinová, A., Kobzev, A., Sekáčová, M., Arbet, J., : Radiation hardness investigation of PECVD silicon carbide layers for PV applications.. In: 40th IEEE Photovoltaic Specialist Conf. – PVSC. IEEE 2014. ISBN: 978-147994398-2. P. 1815-1820.

Zaťko, B., Sedlačková, K., Dubecký, F., Šagátová, A., Boháček, P., Nečas, V., : Semiconductor detector based on 4H-SiC and analysis of its active region thickness. J. Instrument. 9 (2014) C05041.

Boháček, P., Dubecký, F., Sekáčová, M., Zaťko, B., : Temperature dependences of current-voltage characteristics on metal/semi-insulating GaAs structures. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 145-148.

  • 2013

Dubecký, F., Kováč, J., Kováč, J., Zaťko, B., Osvald, J., Hubík, P., Kindl, D., Vanko, G., Gombia, E., Ferrari, C., Boháček, P., Šagátová, A., Nečas, V., Sekáčová, M., : 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: design, technology and performance testing, Proc. SPIE 8777B (2013) 8777-56.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications.. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of 4H-SiC Schottky diode as a detector of ionizing radiation. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 174-177.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., Balalykin, N., : Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology. Phys. Status Solidi a 210 (2013) 2756-2761.

Huran, J., Balalykin, N., Feshchenko, A., Boháček, P., Kobzev, A., Sasinková, V., Kleinová, A., Zaťko, B., :Plasma enhanced chemical vapor deposition of deuterated diamond like carbon films for photocathode application. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., Chodák, I., : Semi-insulating GaAs detectors optimized for fast neutron detection,. J. Instrument. 8 (2013) C03016. (

Huran, J., Kováč, J., Boháček, P., Kováč, J., Kleinová, A., Mikolášek, M., Sekáčová, M., : Spectral response study of Schottky photodetectors based on nanocrystalline silicon carbide thin films prepared by PECVD technology at different conditions. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 93-96.

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M., Arbet, J., Sasinková, V., : The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition,. Applied Surface Sci 267 (2013) 88-91.

  • 2012

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

Huran, J., Kučera, M., Boháček, P., Kobzev, A., Kleinová, A., Sekáčová, M., Kováčová, E., : Electron cyclotron resonance plasma technology of silicon carbon nitride thin films. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 267-270.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., Sekáčová, M., : Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties. J. Electr. Engn. 65 (2012) 333-335.

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., :Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879.

Šagátová, A., Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Nečas, V., : Influence of active volume on detection efficiency of GaAs neutron detectors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 147-150.

Dubecký, F., Hubík, P., Gombia, E., Kindl, D., Dubecký, M., Mudroň, J., Boháček, P., Sekáčová, M., : Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 143-146.

Šagátová, A., Zaťko, B., Dubecký, F., Boháček, P., Sedlačková, K., Nečas, V., : Semi-insulating GAAS detectors of fast neutrons. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 59-62.

Zaťko, B., Šagátová, A., Dubecký, F., Sedlačková, K., Boháček, P., Nečas, V., : Study of particle detector based on SiC epitaxial layer. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 55-58.

  • 2011

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

Zaťko, B., Dubecký, F., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using semi-insulating GaAs coated by high density polyethylene. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 244-247.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L. : Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics. Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133. (VEGA 2/0192/10).

Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77.(APVV 0713-07).

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Nečas, V., Mudroň, J., : Technology and performance study of a two-line monolithic X- and \gamma -ray detection chip Based on Semi-Insulating GaAs. IEEE Trans. Nuclear Sci 58 (2011) 3354-3358.

  • 2010

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Detection of soft X-rays using semi-insulating GaAs detector. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 219-222.

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Evaluation of semi-insulating GaAs detector in soft x-ray region. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 236-239.

Boháček, P., Huran, J., Valovič, A., Kobzev, A., Shvetsov, V., Kučera, M., Malinovsky, L., : N-doped nanocrystalline silicon carbide films prepared by PECVD technology. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 81-84.

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., : Nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology for photocathode application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 77-80.

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Šalát, T., Nečas, V., Mudroň, J., : Performance study of 2×64 pixel two-line monolithic x-ray detection chip on semi-insulating GaAs. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 244-247.

Huran, J., Zaťko, B., Boháček, P., Kobzev, A., Vincze, A., Malinovsky, L., Valovič, A., : Properties of hydrogenated amorphous/nanocrystalline carbon films prepared by plasma enhanced chemical vapour deposition. IoP Conf. Series: Mater. Sci Engn. 12 (2010) 012005.

  • 2009

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

Dubecký, F., Hubík, P., Gombia, E., Zaťko, B., Kindl, D., Boháček, P., : Anomalous charge current transport in semi-insulating GaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface. In: Progress in Applied Surface, Interface and Thin Film Sci 2009. Bratislava: Com. Univ. 2009. P. 19-22.

Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., : Spectrometric performance study of semi-insulating GaAs radiation detector at reduced temperatures. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 231-234.

  • 2008

Boháček, P., Dubecký, F., Hubík, P., Zaťko, B., Chromik, Š., Sekáčová, M., : New kind of quasi-ohmic metallization in semi-insulating GaAs: Role in electrical charge transport. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 32-35.

Boháček, P., Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : PECVD silicon carbon nitrid thin films: properties. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 291-294.

Dubecký, F., Ryć, L., Kaczmarczyk, J., Scholz, M., Zaťko, B., Boháček, P., Huran, J., Ladzianský, M., : Registration of fast netrons emission from hot plasmas by bulk semi-insulating GaAs detectors. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 299-302.

Boháček, P., Zaťko, B., Dubecký, F., Chromik, Š., Huran, J., Sekáčová, M., : Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 105-108. (APVV 51-0459-06). (VEGA 2/7170/27).

Dubecký, F., Zaťko, B., Hubík, P., Boháček, P., Gombia, E., Chromik, Š., : Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 295-298.

  • 2007

Boháček, P., Dubecký, F., Sekáčová, M., : Charge carrier transport in semi-insulating GaAs M-S-M structures: role of electrode technology. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 175-178.

Dubecký, F., Boháček, P., Sekáčová, M., Zaťko, B., Lalinský, T., Linhart, V., Šagátová-Perďochová, A., Mudroň, J., Pospíšil, S., : Role of electrode metallization in performance of semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 87-89. (VEGA 2/7170/27).

Boháček, P., Dubecký, F., Sekáčová, M., : Simulation of the reverse I-V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs. Semicond. Sci Technol. 22 (2007) 763-768. (VEGA 2/7170/27).

  • 2006

Boháček, P., Dubecký, F., Sekáčová, M., : Current-voltage characteristics of semi-insulating GaAs Schottky barrier structures: measurement and simulation. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 169-172.

Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Performance study of semi-insulating GaAs radiation detectors I: role of key physical parameters of base material. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 326-330.

Dubecký, F., Makovník, M., Pivarč, J., Boháček, P., Sekáčová, M., Zaťko, B., Linhart, V., Šagátová-Perďochová, A., Pospíšil, S., : Performance study of semi-insulating GaAs radiation detectors II: role of electrode metallisation. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 331-334.

  • 2005

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., Huran, J., : Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images. Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

Dubecký, F., Hulicius, E., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Sekáčová, M., Boháček, P., Pangrác, J., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with blocking electrode formed by P+ homo- and heterojunction. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 153-156.

Dubecký, F., Zaťko, B., Gombia, E., Sekáčová, M., Boháček, P., Huran, J., : Recent progress in development of monolithic strip line X-ray detectors based on semi-insulating InP. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 157-160.

  • 2004

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Digital X-ray scanner based on monolithic line of semi-insulating GaAs radiation detectors. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 21-24.

Šagátová-Perďochová, A., Nečas, V., Ly Anh, T., Dubecký, F., Boháček, P., Sekáčová, M., Pavlicová, V., :Influence of top contact topology on detection properties of semi-insulating GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 103-110.

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Monolithic array of semi-insulating GaAs detectors: Technology, performance and application in digital x-ray scanner. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 255-258.

Zaťko, B., Dubecký, F., Boháček, P., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Huran, J., Nečas, V., Sekáčová, M., Förster, A., Kordoš, P., : On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 111-120.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

  • 2003

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Boháček, P., Šagátová-Perďochová, A., Hudec, M., Sekáčová, M., Huran, J., : Modular X-ray scanner based on GaAs detectors: status of development. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 115-119.

  • 2002

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

Dubecký, F., Zaťko, B., Nečas, V., Ščepko, P., Gajtanská, M., Sekáčová, M., Šagátová-Perďochová, A., Sekerka, V., Huran, J., Boháček, P., Hudec, M., : Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in γ-ray computer tomograph for industrial purposes. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 258.

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

Boháček, P., Morvic, M., Betko, J., Dubecký, F., Huran, J., : Electrical properties of semi-insulating GaAs irradiated with neutrons. In: SIMC-XII-2002. Eds.: J. Breza et al. Piscataway: IEEE 2002. P. 31.

Dubecký, F., Zaťko, B., Boháček, P., Šmatko, V., Ferrari, C., : Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs as implanted and LT MBE GaAs interface Physik Mikrostrukturierter Halbleiter 27 (2002) 65-70.

Ly Anh, T., Šagátová-Perďochová, A., Nečas, V., Boháček, P., Sekáčová, M., : Gamma-radiation hardness of bulk semi-insulating GaAs. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 292.

Dubecký, F., Zaťko, B., Sekáčová, M., Ferrari, C., Boháček, P., Nečas, V., : On the role of quasi-ohmic back contact in electrical charge transport of diodes based on semi-insulating GaAs. In: APCOM 2002. Eds.: J.Mudroň et al. Liptovský Mikuláš: Military Academy, 2002. ISBN: 80-8040-186-1. P. 90-94.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., Pelfer, P., : Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP. Nuclear Instrum. Methods in Physics Research A 487 (2002) 27-32.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Huran, J., Boháček, P., Ferrari, C., Kordoš, P., Förster, A., : Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 145.

Šagátová-Perďochová, A., Dubecký, F., Ly Anh, T., Nečas, V., Boháček, P., Sekáčová, M., : The role of semi-insulating GaAs detector topology in detection performance. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 265.

  • 2001

Dubecký, F., Zaťko, B., Boháček, P., Nečas, V., Sekáčová, M., Krempasky, M., : On performance and radiation hardness of radiation detectors based on semi-insulating InP. In: APCOM 2001. Liptovský Mikuláš: Military Academy, 2001. P. 71-76.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., Pelfer, P., : The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

Korytár, D., Boháček, P., Ferrari, C., : X-ray flat diffractor optics II. Czechoslovak J. Phys. 51 (2001) 35-47.

  • 2000

Dubecký, F., Huran, J., Darmo, J., Zaťko, B., Krempasky, M., Boháček, P., Sekáčová, M., Bešše, I., Nečas, V., Hotový, I., Fornari, R., Gombia, E., Pelfer, P., : Performance of radiation detectors based on semiinsulating GaAs and InP. In: Sensors Microsystems. Singapore: World Sci 2000. P. 437-441.

Zaťko, B., Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Nečas, V., Boháček, P., Ruček, M., : Role of electron technology in performance of radiation detectors based on bulk semi-insulating GaAs. In: APCOM 2000. Liptovský Mikuláš: Military Academy 2000. P. 133-136.

Boháček, P., Morvic, M., Betko, J., Dubecký, F., Huran, J., : Study of semi-insulating GaAs irradiated with neutrons using conductivity, Hall effect, and magnetoresistance measurement. In: APCOM 2000. Eds. J.Mudroň et al. Liptovský Mikuláš: Military Academy 2000. P. 129.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Boháček, P., Bešše, I., Ruček, M., Nečas, V., Pelfer, P., Senderák, R., Pinčík, E., Somora, M., Kolesár, F., Hudek, P., Kostič, I., : Technology and performance of x-and γ-ray 32 pixel line detector based on semi-insulating GaAs, J. Electrical Engn. 51 (2000) 30-35.

Dubecký, F., Darmo, J., Zaťko, B., Fornari, R., Nečas, V., Krempasky, M., Pelfer, P., Sekáčová, M., Boháček, P., : X-ray and gamma-ray detectors based on bulk semi-insulating GaAs&InP: Present status and prospects. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 151-158.

Korytár, D., Boháček, P., Ferrari, C., : X-ray flat diffractor optics I. Czechoslovak J. Phys. 50 (2000) 841-849.

  • 1999

Dubecký, F., Darmo, J., Zaťko, B., Krempasky, M., Hasenöhrl, S., Procházková, O., Bešše, I., Sekáčová, M.,Boháček, P., Pelfer, P., Nečas, V., : Investigation of X-ray and γ-ray detectors based on GaAs and InP with electrodes grown by MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 263.

Dubecký, F., Darmo, J., Krempasky, M., Nečas, V., Pelfer, P., Boháček, P., Sekáčová, M., : Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication. In: SIMC-X. Eds.: Z.Liliental-Weber and C.Miner. Piscataway: IEEE 1999. P. 149-152.

Dubecký, F., Krempasky, M., Darmo, J., Nečas, V., Hudek, P., Somora, M., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Kostič, I., : Study of performance of the first 32 pixel line chip for x-and γ-ray detection based on bulk semi-insulating GaAs. In: APCOM ’99. Eds. P. Macko et al. Lipt. Mikuláš: Military Acad. 1999. ISBN: 80-8040-098-9. P. 58.

Dubecký, F., Krempasky, M., Darmo, J., Somora, M., Nečas, V., Hlaváč, S., Hudek, P., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Belov, M., : The first results on GaAs 32 pixel line chip for x- and ç-ray detection. In: Proc. 3rd Inter. Symp. Microelectr. Technolog. Microsyst. Košice: FEI-TU 1999. P. 127-131.

  • 1998

Dubecký, F., Darmo, J., Krempasky, M., Pikna, M., Šatka, A., Nečas, V., Pelfer, P., Boháček, P., Sekáčová, M., : Role of physical parameters of bulk semi-insulating GaAs in detection performance of particle detectors. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 339.

  • 1997

Dubecký, F., Krempasky, M., Boháček, P., Sekáčová, M., Fornari, R., Gombia, E., Pikna, M., Pelfer, P., : Electrical and detection characteristics of improved particle detectors based on semi-insulating InP. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 269.

Korytár, D., Boháček, P., Bešše, I., Francesco, L., Mikula, M., : Monolithic devices for high-resolution X-ray diffractometry and topography Il Nuovo Cimento D 19 (1997) 481.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in GaAs power sensor microsystem technology and simulation. In: MICROSIM II: Simulation and Design of Microsystems and Microstructures. Eds. R.A.Adey and P.Renaud. Southamton: Comput. Mechan. Publ. 1997. ISBN-13: 978-1853125010. P. 43-51.

  • 1996

Boháček, P., Krempasky, M., Korytár, D., Sekáčová, M., Senderák, R., : Mapping of the recidual voltage of Hall devices fabriced by P+Si coinplantation on GaAs wafers Physica Status Solidi A 155 (1996) 381.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in a GaAs power sensor microsystem technology and simulation. In: MICROSIM II. Ed. R.A.Adey. Southampton: Comput. Mechanics Publ. 1996. P. 43-51.

Korytár, D., Bešše, I., Boháček, P., : Two-beam dynamical approach to multiple successive diffractors in x-ray crystal optics Czechoslovak J. Phys. 46 (1996) 1011-1026.

  • 1995

Lalinský, T., Porges, M., Šafránková, J., Kuzmík, J., Boháček, P., Mozolová, Ž., Ďuríček, L., : GaAs submicron heterostructure devices. In: Miteko ’95. Pardubice 1995. P. 63.

  • 1994

Boháček, P., Ďuríček, L., Tonkó, P., : Correction of electron drift mobility depth profiles for parasitic resistances in ion-implanted GaAs MESFET structures Elektrotechn. časopis 45 (1994) 75.

  • 1993

Ďuríček, L., Bunčiak, M., Boháček, P., : Comparison of electrical characteristics of P+Si and B+Si coimplanted active layers in SI GaAs. Phys. Status Solidi A 139 (1993) 413.

  • 1990

Betko, J., Měřínsky, K., Boháček, P., Cisar, M., : Určovanie hĺbkových profilov elektrónovej pohyblivosti a koncentrácie v ionovo-implantovaných vrstvách GaAs s využitím geometrickej magnetoresistencie Slaboproudý obzor 51 (1990) 64.

  • 1988

Boháček, P., Měřínsky, K., : Temperature dependence of electron Hall mobilities of Si-implanted GaAs layers. In: Proc. 3rd Conf. Phys. Technol. GaAs and other III-V Semicond. Bratislava: EÚ SAV 1988. P. 83.

Betko, J., Krempaský, J., Měřínsky, K., Boháček, P., : Určovanie Hallovho faktora v epitaxnej vrstve GaAs typu N pomocou Hallových meraní do vysokých magnetických polí. Elektrotechn. časopis 39 (1988) 526.

  • 1982

Měřínsky, K., Boháček, P., Kordoš, P., Betko, J., : Hĺbkové profily koncentrácií nosičov náboja a Hallových pohyblivostí v implantovaných vrstvách GaAs (Si). Elektrotechn. časopis 33 (1982) 409.

  • 1981

Bezák, V., Boháček, P., : Topological discussion of the critical points in selected electronic bands of crystalline silicon, germanium and gallium arsenide. Acta Physica Slovaca 31 (1981) 359..