Mgr. Bohumír ZAŤKO, PhD.

  • 2024

Zaťko, B., Varga, M., Kováčová, E., and Šagátová, A.: A study of particle detectors based on single crystal diamond substrate, Instrument. 19 (2024) C11016.

Zaťko, B., Šagátová, A., Hrubčín, L., Kováčová, E., Novák, A., Kurucová, N., Polansky, Š., and Jakůbek, J.: Imaging and spectrometric performance of SiC Timepix3 radiation camera, J. Instrument. 19 (2024) C01003.

Granja, C., Barber, C., Barna, S., Chancellor, J., Chvatil, D., Grevillot, L., Inzalaco, D., Jakubek, J., Kohout, Z., Magrin, G., Marek, L., Mihai, R.,  Oancea, C., Olsansky, V., Olsen, T., Poklop, D., Pospisil, S., Resch, A.,  Šagátová, A., Sivertz, M., Stursa, J., Sykora, R., Wilhelm, I., Zach, V., and Zaťko, B.: Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons, Instrument. 19 (2024) C11007.

Šagátová, A., Zaťko, B., and Novák, A.: Perspective SiC sensor for radiation camera, Nuclear Phys. News 34 (2024) 27-30.

Šagátová, A., Fülöp, M., Novák, A., Vrban, B., Lüley, J., Čerba, Š., Benkovský, I., and Zaťko, B.: Conversion of fast neutrons for neutron radiography with TPX2 detector, Nukleonika 69 (2024) 135-140.

Kurucová, N., Šagátová, A., Pavlovič, M., Zaťko, B., Kováčová, E., Boháček,  P., Škriniarová, J., and Predanocy, M.: Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles, J. Instrument. 19 (2024) C03049.

Zaťko, B., Varga, M., Vanko, G., Izsák, T., Šagátová, A., and Kromka, A.: Polycrystalline CVD diamond-based structures for detection of charge particles, AIP Conf. Proc. 3054 (2024) 050013.

Kotorová, S., Šagátová, A., and Zaťko, B.: Analysis of CdTe detectors using I-V characteristics, AIP Conf. Proc. 3054 (2024) 050004.

Kurucová, N., Šagátová, A., Kováčová, E., and Zaťko, B.: Influence of quasi-ohmic electrode on performance of semi-insulting GaAs detectors, AIP Conf. Proc. 3054 (2024) 050005.

Šagátová, A., Hrubčín, L., Kurucová, N., Nečas, V., Kováčová, E., Evseev, S.A., and Zaťko, B.: Electrical properties study of the 4H-SiC detectors based on thick epitaxial layer, AIP Conf. Proc. 3054 (2024) 050011.

Zaťko, B., Šagátová, A., and Kováčová, E.: Detection and spectrometric properties of the 4H-SiC Schottky detectors based on thick epitaxial layers, AIP Conf. Proc. 3251 (2024) 080006.

Kurucová, N., Šagátová, A., Granja, C., Hladík,  D., and Zaťko, B.: Comparison of increased temperature on timepix3 detector with SiC vs Si sensor, AIP Conf. Proc. 3251 (2024) 070001.

Kotorová, S., Šagátová, A., and Zaťko, B.: Analysis of CdTe detectors via alpha and gamma spectrometry, AIP Conf. Proc. 3251 (2024) 080009.

Hrubčín, L., Zaťko, B., and Kováčová, E.: Silicon radiation detectors with rectifier junction prepared by different technological procedures, AIP Conf. Proc. 3251 (2024) 080005.

Šagátová, A., Kováčová, E., Benčurová, A., Konečníková, A., Gregušová, D., Nečas, V., and Zaťko, B.: The bias effect on alpha spectrometry of very thin semi-insulating GaAs detectors, AIP Conf. Proc. 3251 (2024) 080010.

  • 2023

Evseev, S.A., Chernyshev, B.A., Gurov, Y.B., Dovbnenko, M.S., Zamiatin, N.I., Kopylov, Y.A., Rozov, S.V., Sandukovsky, V.G., Hrubčín, L., and Zaťko, B.: Radiation damage of SiC detectors irradiated with Xe ions and neutrons, Phys. Atomic Nuclei 86 (2023) 841–844.

Zaťko, B., Šagátová, A., Kováčová, E., Novák, A., Sýkora, R., Kohout, Z., and Polansky, Š.: Detection of fast neutrons using 4H-SiC radiation detectors, EPJ Web Conf. 288 (2023) 03004.

Šagátová, A., Kurucová, N., Kotorová, S., Kováčová, E., and Zaťko, : Influence of base material thickness on spectrometry of semiconductor detectors based on semi-insulating GaAs, EPJ Web Conf. 288 (2023) 10013.

Zaťko, B., Hrubčín, L., Boháček, P., Gurov, Y.B., Rozov, S.V., Evseev, S.A., Bulavin, M.V., Zamiatin, N.I., Kopylov, Y.A., Sekáčová, M., and Kováčová, E.: Spectrometric performance of 4H-SiC detectors after neutron irradiation, AIP Conf. Proc. 2778 (2023) 060012. (APVV 18 0243, APVV 18-0273, VEGA 2/0084/20)

Novák, A., Granja, C., Šagátová, A., Jakubek, J., Zaťko, B., Vondracek, V., Andrlik, M., Zach, V., Polansky, Š., Rathi, A., Oancea, C.: Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view, J. Instrument. 18 (2023) C11004.

Gál, N., Hrubčín, L., Šagátová, A., Vanko, G., Kováčová, E., and Zaťko, B.:  High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C, Applied Surface Sci 635 (2023) 157708.

Novák, A., Šagátová, A., and Zaťko, B.: Energy calibration of timepix detector with GaAs sensor, AIP Conf. Proc. 2778 (2023) 050004.

Sedlačková, K., Zaťko, B., and Nečas V.: Spectrometry of electron irradiated CdTe Schottky-barrier semiconductor detectors before polarization onset, AIP Conf. Proc. 2778 (2023) 060010.

Šagátová, A., Novák, A., Kováčová, E., Riabukhin, O., Kotorová, S., and Zaťko, B.: Radiation-degraded SI GaAs detectors and their metallization, AIP Conf. Proc. 2778 (2023) 060009.

Kotorová, S., Šagátová, A., Vanko, G., Boháček, P., and Zaťko, B.: Effect of thermal annealing on 4H-SiC radiation detector, AIP Conf. Proc. 2778 (2023) 060004.

Huran, J., Skrypnik, A.V., Dujnič, V., Doroshkevich, A.S., Zaťko, B., Nozdrin, M.A., Kováčová, E., and Shirkov, G.D.: Raman spectroscopy study of very thin carbon films prepared by electron beam-plasma vacuum deposition. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 67-70.

Sedlačková, K., Zaťko, B., Šagátová, A., and Nečas, V.: Effect of electron irradiation on spectroscopic properties of Schottky Barrier CdTe semiconductor detectors. In: High-Z Materials for X-ray Detection. Eds. L. Abbene, K. Iniewski. Springer, Cham. ISBN 2023 978-3-031-20954-3. P. 207–225. (Not IEE SAS)

  • 2022

Gurov, J.B., Evseev, S.A., Zamyatin, N.I., Kopylov, Y.,A., Rozov, S.V., Sandukovsky, V.G., Streletskaia, E.A., Hrubčín, L., Zaťko, B., and Boháček, P.: Radiation Resistance of SiC Detectors after Neutron Irradiation, Phys. Particl. Nuclei Lett.19 (2022) 740-743. (Not IEE SAS)

Šagátová, A., Kováčová, E., Novák, A., Nečas, V., and Zaťko, B.: Alpha-spectrometry by radiation-degraded semi-insulating GaAs detectors, Mater. Today: Proc. 53 (2022) 293-298.

Šagátová, A., Gál, N., Novák, A., Kotorová, S., Riabukhin, O., Kováčová, E., and Zaťko, B.: GaAs radiation-degraded detectors: gamma spectrometry at lowered temperatures, J. Instrum. 17 (2022) C12018.

Zaťko, B., Šagátová, A., Gál, N., Novák, A., Osvald, J., Boháček, P., Polansky, Š., Jakůbek, J., and Kováčová, E.: From a single silicon carbide detector to pixelated structure for radiation imaging camera, J. Instrum. 17 (2022) C12005.

Sedláčková, K., Zaťko, B., Šagátová, A., and Nečas, V.: Polarization effect of Schottky-barrier CdTe semiconductor detectors after electron irradiation, Nuclear Instr. Methods Phys. Res. A 1027 (2022) 166282.

Osvald, J., Hrubčín, L., and Zaťko, B.: Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes, Mater. Sci Semicond. Process. 140 (2022) 106413.

Izsák, T., Vanko, G., Babčenko, O., Zaťko, B., and Kromka, A.: Effects of metal layers on chemical vapor deposition of diamond films, J. Electr. Engn. 73 (2022) 350–354.

Osvald, J. and Zaťko, B.: Anomalous intersection point of Schottky diodes I-V curves measured at different temperatures. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 133-136.

Zaťko, B., Šagátová, A., Osvald, J., Gál, N., Hrubčín, L., and Kováčová, E., Gurov, Y. B.: High-quality detectors based on 4H-SiC operated at different temperatures. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 203-206.

Novák, A., Šagátová, A., Zaťko, B., Granja, C., and Chváti, D.: Spectral tracking in wide field-of-view of MeV electrons using timepix detector with GaAs sensor. In: ELITECH´22: 24th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Huran, J., Skrypnik, A.V., Dujnič, V., Doroshkevičch, A.S., Zaťko, B., Nozdrin, M.A.,  Kováčová, E., and Shirkov, G.D.: Electron beam-plasma vacuum deposition of very thin carbon films: photocathode application. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 123-126.

Izsák, T., Vanko, G., Babčenko, O., Zaťko, B., and Kromka, A.: Effects of metal layers on chemical vapor deposition of diamond films. In NANOCON 2022. Abstracts 14th Inter. Conf. Nanomater. – Res. & Appl. Ostrava, Tanger Ltd. 2022, p. 68. ISBN 978-80-88356-07-5.

Izsák, T., Kováčová, E., Vanko, G., Haščík, Š., Zehetner, J., Vojs, M., and Zaťko, B.: Optimization of mask material for deep reactive ion etching of GaAs structures. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 169-172.

  • 2021

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: The study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

Šagátová, A., Kršjak, V., Sojak, S., Riabukhin, O., Kováčová, E., and Zaťko, B.: Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy, J. Instrum. 16 (2021) C12032.

Izsák, T., Vanko, G., Babchenko, O., Vincze, A., Vojs, M., Zaťko,  B., and Kromka, A.: Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements, Mater. Sci Engn. B 273 (2021) 115434.

Zápražný, Z., Zaťko, B., Korytár, D., Gál,, Jergel, M., Halahovets, Y., and Ferrari, C.: Testing of thickness homogeneity of Si crystal membranes using GaAs Timepix detector,  J. Instrument. 16 (2021) P06015.

Šagátová, A., Kováčová, E., Novák, A., Fulöp, M., and Zaťko, B.: Current-voltage characterization of GaAs detectors and their holders irradiated by high-energy electrons, Applied Surface Sci 552 (2021) 149474.

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Ivanov, O.M., Sekáčová, M., Kováčová, E., Gurov, Y.B., and Skuratov, V.A.: Study of the pulse height defect of 4H-SiC Schottky barrier detectors in heavy ion detection, AIP Conf. Proc. 2411 (2021) 070007.

Šagátová, A., Zaťko, B., Kováčová, E., and Nečas, V.: Gamma spectrometry of different energies by radiation-degraded SI GaAs detectors, AIP Conf. Proc. 2411 (2021) 080013.

  • 2020

Sedlačková, K., Zaťko, B., Pavlovič, M., Šagátová, A., and Nečas, V.: Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors, Inter. J. Modern Phys.: Conf. Ser. 50 (2020) 2060017.

Osvald, J., Hrubčín, L., and Zaťko, B.: Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors, Applied Surface Sci 533 (2020) 147389.

Zaťko, B., Šagátová, A., Zápražný, Z., Boháček, P., Sekáčová, M., Kováčová, E., Žemlička, J., Jakůbek, J., Korytár, D., Gál, N., and Nečas, V.: Study of the contrast resolution of Timepix detector with a semi-insulating GaAs sensor, J. Instrument. 15 (2020) C04004.

Šagátová, A., Zaťko, B., Nečas, V., and Fülöp, M.: Radiation hardness limits in gamma spectrometry of semi-insulating GaAs detectors irradiated by 5MeV electrons, J. Instrument. 15 (2020) C01024.

Izsák, T., Vanko, G., Držík, M., Kasemann, S., Zehetner, J., Vojs, M., Zaťko,  B., Potocký, Š., and Kromka, A.: Direct deposition of CVD diamond layers on the top of GaN membranes, Proceedings 56 (2020), Iss 1, no. 35.

Izsák, T., Vanko, G., Držík, M., Kasemann, S., Zehetner, J., Vojs, M., Zaťko,  B., Potocký, Š., and Kromka, A.: Front-side diamond deposition on the GaN membranes. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 42-45.

Šagátová, A., Zaťko, B., Kováčová, E., and Nečas, V.: Gamma spectrometry of semi-insulating GaAs detectors degraded by 5 MeV electrons up to 2 MGy. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 139-142.

Zaťko, B., Šagátová, A., Hrubčín, L., Boháček, P., Kováčová, E., and Gurov, Y. B.: The Schottky barrier detectors based on 4H-SiC epitaxial layer. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 143-146.

Dubecký, F., Hubík, P., Vanko, G., Zaťko, B., Boháček, P., Sekáčová, M., Šagátová, A., and Nečas, V.: Investigation of Mg contact on SI-GaAs. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 147-151.

Zápražný, Z., Korytár, D., Zaťko, B., Jergel, M., Halahovets, Y., Dobrovodský, J., and  Noga, P.: Study of subsurface damage in Ge optics machined by SPDT. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 152-156.

  • 2019

Zaťko, B., Hrubčín, L., Boháček, P., Osvald, J., Šagátová, A., Sekáčová, M., Kováčová, E., and Nečas, V.: Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer, AIP Conf. Proc. 2131 (2019) 020054.

Šagátová, A., Zaťko, B., and Nečas, V.: Influence of holder quality on radiation hardness of SI GaAs detector, AIP Conf. Proc. 2131 (2019) 020038.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Role of contacts in metal/semi-insulating GaAs/metal structures: symmetrical geometry, AIP Conf. Proc. 2131 (2019) 020010.

Dubecký, F., Zaťko, B., Kolesár, V., Kindl, D., Hubík, P., Gombia, E., and Dubecký, M.: Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs, Applied Surface Sci 467-468 (2019) 1219-1225.

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023.

Hrubčín, L., Gurov, J.B., Zaťko, B., Boháček, P., Rozov, S.V., Rozov, I.E., Sandukovskij, V.G., a Skuratov, V.A.: The amplitude defect of SiC detectors during the recording of accelerated Xe ions, Yadernaya Fizika i Inzhiniring 10 (2019) no. 3, Phys. Atomic Nuclei 82 (2019) 1682-1685.

  • 2018

Hrubčín, L., Gurov, J.B., Zaťko, B., Mitrofanov, S.V. Rozov, S.V., Sedlačková, K., Sandukovskij, V.G. Semin, V.A., Nečas, V., and Skuratov, V.A.: Characteristics of Si and SiC detectors at registration of Xe ions, J. Instrument. 13 (2018) P11005.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., Boháček, P., and Sekáčová, M.: Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detector covered by LiF film for thermal neutron detection, Applied Surface Sci 461 (2018) 242-248.

Šagátová, A., Zaťko, B., Nečas, V., Sedláčková, K., Boháček, P., Fülöp, M., and Pavlovič, M.: Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons, J. Instrument. 13 (2018) C01006.

Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M Korytár, D., Nečas, V., Žemlička, J., Mora, Y., and Pichotka, M.: Imaging performance of Timepix detector based on semi-insulating GaAs, J. Instrument. 13 (2018) C01034.

Zaťko, B., Kubanda, D., Žemlička, J., Šagátová, A., Zápražný, Z., Boháček, P., Nečas, V., Mora, Y., Pichotka, M., and Dudák, J.: First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size, J. Instrument. 13 (2018) C02013.

Šagátová, A., Zaťko, B., Kubanda, D., Boháček, P., Sekáčová, M., and Nečas, V.: Optimization of X-ray imaging by Timepix based radiation camera with SI GaAs sensor, AIP Conf. Proc. 1996 (2018) 020039.

Zaťko, B., Dubecký, F., Ryć, L., Šagátová, A., Sedlačková, K., Kováčová, E., and Nečas, V.:  The study of 4H-SiC alpha particle detectors with different Schottky contact metallization, AIP Conf. Proc. 1996 (2018) 020051.

Hrubčín, L., Gurov, J.B., Zaťko, B., Ivanov, O.M., Mitrofanov, S.V., Rozov, S.V., Sandukovskij, V.G., Semin, V.A., and Skuratov, V.A.: A study of the radiation hardness of Si and SiC detectors using a Xe ion beam, Instrum. Experiment. Techn. 61 (2018) 769-771.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Sekáčová, M., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Study of metal/semi-insulating GaAs/metal contacts: symmetrical geometry. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 17-20.

Osvald, J. and Zaťko, B.: Inhomogeneous schottky barrier height in 4h-sic surface barrier detectors. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 208-211.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 39-42.

Kubanda, D., Zaťko, B., Žemlička, J., Šagátová, A., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 121-124.

Šagátová, A., Zaťko, B., Kubanda, D., Boháček, P., Sekáčová, M., and Nečas, V.: Optimal irradiation geometry for Timepix imaging detector with GaAs sensor compared with Si based sensor. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 149-152.

  • 2017

Dubecký, F., Vanko, G., Zaťko, B., Kováč, J., Gombia, E., Ferrari, C., Šagátová, A., Nečas, V., : 4H-SiC radiation hard photodetector for UV photons and soft X-rays In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 23-27.

Šagátová, A., Zaťko, B., Nečas, V., Sedlačková, K., Fülöp, M., : Evaluation of SI GaAs detectors after radiation degradation via alpha spectrometry In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 119-122.

Zaťko, B., Hrubčín, L., Sedlačková, K., Boháček, P., Šagátová, A., Sekáčová, M., Arbet, J., Skuratov, V., Nečas, V., : High energy ion detection using 4H-SiC semiconductor detector In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 154-157.

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., Fülöp, M., :Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons. Applied Surface Sci 395 (2017) 66-71.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., : The effect of the LiF film topology on detection properties of thermal neutron semiconductor detectors In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 125-129.

Hrubčín, L., Gurov, J.B., Zaťko, B., Ivanov, O.M., Mitrofanov, S.V., Rozov, S.V., Sandukovskij, V.G., Semin, V.A., a Skuratov, V.A.: Issledovanije radiacionnoj stojkosti Si- i SiC-detektorov na pučke ionov Xe. Dubna: SÚJV 2017. Preprint P13-2017-81.

  • 2016

Zaťko, B., Šagátová, A., Sedlačková, K., Nečas, V., Dubecký, F., Solar, M., Granja, C., : Detection of fast neutrons from D-T nuclear reaction using 4H-SiC radiation detector. Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660235.

Szundiová, B., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Electrical and detection properties of bulk semi-insulating GaAs detectors. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 275-278.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Daráţová, Ľ., : Gallium arsenide detectors with 6LiF layer for thermal neutron detection. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 45-49.

Dubecký, F., Vanko, G., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., : Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 219-222.

Sedlačková, K., Šagátová, A., Zaťko, B., Nečas, V., Solar, M., Granja, C., : MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction. Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660226.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Boháček, P., : Optimization of SI GaAs detector for thermal neutron detection In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 23-26.

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., Nečas, V., :Radiation detector based on 4H-SiC used for thermal neutron detection. J. Instrument. 11 (2016) C11022.

Šagátová, A., Kubanda, M., Zaťko, B., Sedlačková, K., Nečas, V., Solar, M., Granja, C., : Semi-insulating GaAs based detector of fast neutrons produced by D–T nuclear reaction. J. Instrument. 11 (2016) C12002

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Nečas, V., Fülöp, M., Solar, M., Granja, C., : Semi-insulating GaAs detectors with HDPE layer for detection of fast neutrons from D-T nuclear reaction. Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660233.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., : Simulation of the thermal neutron semiconductor detector response using MCNPX code. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 126-130.

Šagátová, A., Zaťko, B., Sedlačková, K., Boháček, P., Fülöp, M., Kubanda, M., Nečas, V., : Spectrometric properties of semi-insulating GaAs detectors irradiated by 5 MeV electrons at different dose rates. J. Instrument. 11 (2016) C12078.

Zaťko, B., Šagátová, A., Boháček, P., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., : The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs. J. Instrument. 11 (2016) C01076.

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Arbet, J., Nečas, V., : The thermal neutron detection using 4H-SiC detectors with 6LiF conversion layer. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 37-41.

  • 2015

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., Fülöp, M., : GaAs radiation sensor improvement by low doses od gamma-rays, neutrons and electrons. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 142-144.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Ryć, L., : High resolution alpha particle detectors based on 4H-SiC epitaxial layer. J. Instrument. 10 (2015) C04009.

Gurov, J., Rozov, S., Sandukovskij, V., Jakušev, E., Hrubčín, L., Zaťko, B., : Characteristics of silicon carbide detectors. Instrum. Experiment. Techn. 58 (2015) 22-24.

Boháček, P., Zaťko, B., Šagátová, A., Hybler, P., Sekáčová, M., : Influence of 5 MeV electron irradiation on galvanomagnetic parameters of semi-insulating GaAs In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 234-237.

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Nečas, V., : Influence of electron irradiation on properites of semi-insulating GaAs detectors. Radiation Effects Defects in Solid 170 (2015) SI192-198.

Dubecký, F., Kindl, D., Hubík, P., Oswald, J., Mičušík, M., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., Šagátová, A., : Peculiarities of metal contacts on semi-insulating GaAs: electrical, photoelectronic and XPS characterization In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 216-220.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., : The effect of contacts on energy resolution of SiC semiconductor detector in alpha-particle spectrometry In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 258-262.

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : The effect of high-energy electrons irradiation on the current-voltage characteristics of Schottky barriers detectors based on semi-insulating GaAs In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 154-157.

  • 2014

Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 65-68.

Boháček, P., Zaťko, B., Šagátová, A., Hybler, P., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 45-48.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Fülöp, M., : Electron irradiation effects on the spectrometric characteristics of GaAs detectors In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 61-64.

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Fülöp, M., Boháček, P., Nečas, V., : GaAs detectors irradiated by electrons at different dose rates. J. Instrument. 9 (2014) C12050.

Šagátová, A., Zaťko, B., Pavlovič, M., Sedlačková, K., Hybler, P., Dubecký, F., Nečas, V., : GaAs detectors irradiated by low doses of electrons. J. Instrument. 9 (2014) C04036.

Hrubčín, L., Gurov, J., Zaťko, B., Rozov, S., Sandukovskij, V., Jakušev, E., : Charakteristiki detektorov na osnove karbida kremija Dubna: SÚJV 2014. Preprint P13-2014-23.

Šagátová, A., Zaťko, B., Hybler, P., Sedlačková, K., Nečas, V., : Influence of electron irradiation on electrical properties of GaAs detectors. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 276-279.

Dubecký, F., Zaťko, B., Vanko, G., Hubík, P., Oswald, J., Kindl, D., Gombia, E., Kováč, J., Šagátová, A., Nečas, V., : M/SI-GaAs/M diode: role of the metal contact in electrical transport, ɑ-particle and photon detection In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 49-52.

Sedlačková, K., Šagátová, A., Zaťko, B., Nečas, V., : MCNPX calculations for electron irradiated semiconductor detectors. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 280-283.

Sedlačková, K., Zaťko, B., Šagátová, A., Pavlovič, M., Nečas, V., Stacho, M., : MCNPX Monte Carlo simulations of particle transport in SiC semiconductor detectors of fast neutrons. J. Instrument. 9 (2014) C05016.

Zaťko, B., Sedlačková, K., Dubecký, F., Šagátová, A., Boháček, P., Nečas, V., : Semiconductor detector based on 4H-SiC and analysis of its active region thickness. J. Instrument. 9 (2014) C05041.

Boháček, P., Dubecký, F., Sekáčová, M., Zaťko, B., : Temperature dependences of current-voltage characteristics on metal/semi-insulating GaAs structures. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 145-148.

  • 2013

Dubecký, F., Kováč, J., Kováč, J., Zaťko, B., Osvald, J., Hubík, P., Kindl, D., Vanko, G., Gombia, E., Ferrari, C., Boháček, P., Šagátová, A., Nečas, V., Sekáčová, M., : 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: design, technology and performance testing, Proc. SPIE 8777B (2013) 8777-56.

Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of 4H-SiC Schottky diode as a detector of ionizing radiation. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 174-177.

Dubecký, F., Zaťko, B., Gombia, E., Šagátová, A., Nečas, V., : Detection performance study of SI-GaAs detectors with novel electrode metallization. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 186-190.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., : Monte Carlo simulations of the particle transport in semiconductor detectors of fast neutrons,. Nuclear Instr. Methods Phys. Res. A 709 (2013) 63-67.

Huran, J., Balalykin, N., Feshchenko, A., Boháček, P., Kobzev, A., Sasinková, V., Kleinová, A., Zaťko, B., :Plasma enhanced chemical vapor deposition of deuterated diamond like carbon films for photocathode application. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., : Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 62-65.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., Chodák, I., : Semi-insulating GaAs detectors optimized for fast neutron detection,. J. Instrument. 8 (2013) C03016.

Šagátová, A., Pavlovič, M., Hybler, P., Sedlačková, K., Zaťko, B., Nečas, V., : Simulations for irradiation of silicon-based structures. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 182-185.

  • 2012

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., Nečas, V., : Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005.

Šagátová, A., Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Nečas, V., : Influence of active volume on detection efficiency of GaAs neutron detectors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 147-150.

Dubecký, F., Príbytný, P., Vanko, G., Zaťko, B., Gombia, E., Baldini, M., Hrkút, P., Nečas, V., Donoval, D., : Novel concepts of soft X-ray detector based on semi-insulating GaAs. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 29-32.

Sedlačková, K., Zaťko, B., Nečas, V., : Numerical study of the particle transport in fast neutron detectors with conversion layer. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 51-54.

Huran, J., Kadlečíková, M., Zaťko, B., Feschenko, A., Kobzev, A., Vančo, L., Nozdrin, M., Kleinová, A., Kováčová, E., : Photocathodes based on diamond like carbon films prepared by reactive magnetron sputtering and PECVD technology. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 263-266.

Šagátová, A., Zaťko, B., Dubecký, F., Boháček, P., Sedlačková, K., Nečas, V., : Semi-insulating GAAS detectors of fast neutrons. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 59-62.

Zaťko, B., Šagátová, A., Dubecký, F., Sedlačková, K., Boháček, P., Nečas, V., : Study of particle detector based on SiC epitaxial layer. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 55-58.

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Zaťko, B., Kováč, P., Baček, D., Baldini, M., Ryć, L., Nečas, V., : Surface barrier 4H-SiC soft X-ray detector for hot plasmas diagnostic. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 247-250.

  • 2011

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

Zaťko, B., Dubecký, F., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using semi-insulating GaAs coated by high density polyethylene. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 244-247.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L. : Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics. Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Baldini, M., Ryć, L., Zaťko, B., Nečas, V., : Characterization of epitaxial 4H-SiC as a material for spectrometric radiation detectors. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 240-243.

Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Nečas, V., Mudroň, J., : Technology and performance study of a two-line monolithic X- and \gamma -ray detection chip Based on Semi-Insulating GaAs. IEEE Trans. Nuclear Sci 58 (2011) 3354-3358.

  • 2010

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Detection of soft X-rays using semi-insulating GaAs detector. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 219-222.

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Evaluation of semi-insulating GaAs detector in soft x-ray region. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 236-239.

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Šalát, T., Nečas, V., Mudroň, J., : Performance study of 2×64 pixel two-line monolithic x-ray detection chip on semi-insulating GaAs. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 244-247.

Huran, J., Zaťko, B., Boháček, P., Kobzev, A., Vincze, A., Malinovsky, L., Valovič, A., : Properties of hydrogenated amorphous/nanocrystalline carbon films prepared by plasma enhanced chemical vapour deposition. IoP Conf. Series: Mater. Sci Engn. 12 (2010) 012005.

  • 2009

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

Dubecký, F., Hubík, P., Gombia, E., Zaťko, B., Kindl, D., Boháček, P., : Anomalous charge current transport in semi-insulating GaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface. In: Progress in Applied Surface, Interface and Thin Film Sci 2009. Bratislava: Com. Univ. 2009. P. 19-22.

Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Grybos, P., : Portable x-ray CT mini system based on monolithitic semiinsulating GaAs detectors using perspective imaging reconstruction techniques. In: IMEKO XIX World. Eds. P.S. Girao, P.M. Ramos. IMEKO, 2009. ISBN 978-963-88410-0-1. P. 1680-1683.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Ščepko, P., Mudroň, J., : Quantum imaging X–ray CT systems based on GaAs radiation detectors using perspective imaging reconstruction techniques, Measurement Sci Rev. 9, Sec. 3 (2009) 27-32.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., : Spectrometric performance study of semi-insulating GaAs radiation detector at reduced temperatures. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 231-234.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., : Two solutions of the quantum imaging x-ray CT system based on GaAs radiation detectors. In: Measurement 2009. Eds. M. Tyšler et al. Bratislava: IMS SAS 2009. ISBN 978-80-969672-1-6. P. 377-380.

  • 2008

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Juráš, V., : Experiments with application of image reconstruction method based on perspective imaging techniques x-ray CT mini system. In: IWSSIP 2008. Eds. G. Rozinaj et al. Bratislava: FEI STU 2008. P. 33-36.

Boháček, P., Dubecký, F., Hubík, P., Zaťko, B., Chromik, Š., Sekáčová, M., : New kind of quasi-ohmic metallization in semi-insulating GaAs: Role in electrical charge transport. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 32-35.

Zaťko, B., Dubecký, F., Přibil, J., Mudroň, J., : On current development of quantum imaging X–CT system using GAAS radiation detectors. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 271-274.

Zaťko, B., Dubecký, F., Ščepko, P., Grybos, P., Mudroň, J., Maj, P., Szcygiel, R., Frollo, I., : On the detection performance of semi-insulating GaAs detectors coupled to multichannel ASIC DX64 for X-ray imaging applications. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 101-104.

Zaťko, B., Dubecký, F., Ščepko, P., Grybos, P., Mudroň, J., : Preliminary tests of semi-insulating GaAs radiation detectors coupled to the multichannel ASIC DX64 readout chip. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 339-342.

Dubecký, F., Ryć, L., Kaczmarczyk, J., Scholz, M., Zaťko, B., Boháček, P., Huran, J., Ladzianský, M., : Registration of fast netrons emission from hot plasmas by bulk semi-insulating GaAs detectors. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 299-302.

Boháček, P., Zaťko, B., Dubecký, F., Chromik, Š., Huran, J., Sekáčová, M., : Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 105-108.

Dubecký, F., Zaťko, B., Hubík, P., Boháček, P., Gombia, E., Chromik, Š., : Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 295-298.

  • 2007

Přibil, J., Frollo, I., Dubecký, F., Zaťko, B., Juráš, V., : Automated positional unit of testing x-ray CT mini system. In: Applied Electronics 2007. Pilsen: Univ. West Bohemia, 2007. ISBN: 987-80-7043-537-3. P. 163-166.

Šagátová-Perďochová, A., Dubecký, F., Zaťko, B., Chodák, I., Ladzianský, M., Nečas, V., : Detectors of fast netrons based on semi-insulating GaAs with neutron converter layers. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 56-69.

Zaťko, B., Dubecký, F., : First results with 64 channels readout chip DX64 connected to semi-insulating gallium arsenide radiation detectors. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 141-144.

Zaťko, B., Dubecký, F., Ščepko, P., Mudroň, J., Stranovský, I., : Imaging performance study of the quantum X-ray scanner based on GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 66-69.

Šagátová-Perďochová, A., Ladzianský, M., Zaťko, B., Dubecký, F., Nečas, V., : Registration of neutrons by GaAs radiation detectors. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 149-152.

Dubecký, F., Boháček, P., Sekáčová, M., Zaťko, B., Lalinský, T., Linhart, V., Šagátová-Perďochová, A., Mudroň, J., Pospíšil, S., : Role of electrode metallization in performance of semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 87-89.

Zaťko, B., Dubecký, F., Procházková, O., Nečas, V., : Role of electrode metalllization in the performance of bulk semi-insulating InP radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 98-102.

Šagátová-Perďochová, A., Zaťko, B., Dubecký, F., Nečas, V., : Sensors of gamma rays based on SI GaAs, Časopis pre elektrotechniku a energetiku 13 (2007) 140-142.

  • 2006

Šagátová-Perďochová, A., Linhart, V., Dubecký, F., Zaťko, B., Nečas, V., Pospíšil, S., : Experimental analysis of the electric field distribution in GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 187-191.

Dubecký, F., Zaťko, B., Frollo, I., Juras, J., Přibil, J., Jakubek, J., Mudroň, J., : First results observed with test X-CT system using GaAs radiation detectors working in single photon counting regime. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 213-216.

Šagátová-Perďochová, A., Ladzianský, M., Zaťko, B., Žaťko, M., Dubecký, F., Nečas, V., : GaAs detectors of fast neutrons. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 70-73.

Ladzianský, M., Šagátová-Perďochová, A., Zaťko, B., Nečas, V., Dubecký, F., : Changes of GaAs neutron detectors properties after fast neutron irradiation. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 217-220.

Huran, J., Zaťko, B., Hotový, I., Petzold, J., Kobzev, A., Balalykin, N., : PECVD silicon carbide deposited at different temperatures Czechoslov. J. Phys. B 56 (2006) S1207-S1211.

Zaťko, B., Dubecký, F., : Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature. IEEE Trans. Nuclear Sci 53 (2006) 625-629.

Zaťko, B., Dubecký, F., Procházková, O., Nečas, V., : Performance study of bulk semi-insulating InP radiation detectors with different electrode metallization. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 161-164.

Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Performance study of semi-insulating GaAs radiation detectors I: role of key physical parameters of base material. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 326-330.

Dubecký, F., Makovník, M., Pivarč, J., Boháček, P., Sekáčová, M., Zaťko, B., Linhart, V., Šagátová-Perďochová, A., Pospíšil, S., : Performance study of semi-insulating GaAs radiation detectors II: role of electrode metallisation. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 331-334.

Ladzianský, M., Šagátová-Perďochová, A., Nečas, V., Zaťko, B., Dubecký, F., : Radiation damage of GaAs detectors by neutrons. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 46-49.

Zaťko, B., Dubecký, F., Nečas, V., Procházková, O., : Radiation detectors based on semi-insulating InP: role of electrode technology. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 65-69.

  • 2005

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., Huran, J., : Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images. Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Zaťko, B., : Guard-ring and charge collection efficiency of GaAs detector Advances in Electrical and Electronic Engn. 4 (2005) 75-78.

Zaťko, B., Dubecký, F., Ščepko, P., Melov, V., Herms, M., Haupt, L., : Performance study of monolithic line radiation detector based on semi-insulating GaAs using X-ray source. Nuclear Instr. and Methods in Phys. Res. A 551 (2005) 78-82.

Dubecký, F., Hulicius, E., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Sekáčová, M., Boháček, P., Pangrác, J., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with blocking electrode formed by P+ homo- and heterojunction. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 153-156.

Dubecký, F., Zaťko, B., Gombia, E., Sekáčová, M., Boháček, P., Huran, J., : Recent progress in development of monolithic strip line X-ray detectors based on semi-insulating InP. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 157-160.

  • 2004

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Digital X-ray scanner based on monolithic line of semi-insulating GaAs radiation detectors. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 21-24.

Zaťko, B., Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Melov, V., Škriniarová, J., Haupt, L., : First test of radiation line detector based on semi-insulating GaAs using x-ray source. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 299-302.

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Monolithic array of semi-insulating GaAs detectors: Technology, performance and application in digital x-ray scanner. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 255-258.

Zaťko, B., Dubecký, F., Boháček, P., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Huran, J., Nečas, V., Sekáčová, M., Förster, A., Kordoš, P., : On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 111-120.

Dubecký, F., Ščepko, P., Nečas, V., Zaťko, B., Sekerka, V., Sekáčová, M., Hudec, M., Huran, J., : Quantum digital x-ray scanner based on SI GaAs detectors: overal description and first imaging results. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 46-51.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

Zaťko, B., Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Melov, V., Škriniarová, J., Haupt, L., : Test of 24 strip line radiation detector based on semi-insulating GaAs using X-ray source. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 243-246.

  • 2003

Zaťko, B., Dubecký, F., Gombia, E., Žďánský, K., Nečas, V., : Evaluation of semi-insulating GaAs detectors for nuclear radiation detection. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 111-114.

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Boháček, P., Šagátová-Perďochová, A., Hudec, M., Sekáčová, M., Huran, J., : Modular X-ray scanner based on GaAs detectors: status of development. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 115-119.

  • 2002

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

Dubecký, F., Zaťko, B., Nečas, V., Ščepko, P., Gajtanská, M., Sekáčová, M., Šagátová-Perďochová, A., Sekerka, V., Huran, J., Boháček, P., Hudec, M., : Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in γ-ray computer tomograph for industrial purposes. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 258.

Dubecký, F., Zaťko, B., Boháček, P., Šmatko, V., Ferrari, C., : Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs as implanted and LT MBE GaAs interface Physik Mikrostrukturierter Halbleiter 27 (2002) 65-70.

Dubecký, F., Zaťko, B., Ferrari, C., Šmatko, V., Förster, A., Kordoš, P., : Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LTG MBE GaAs interface. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 169.

Zaťko, B., Dubecký, F., Nečas, V., : Influence of temperature in spectrometric performances of the radiation detector based on semi-insulating GaAs. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 269.

Dubecký, F., Zaťko, B., Sekáčová, M., Ferrari, C., Boháček, P., Nečas, V., : On the role of quasi-ohmic back contact in electrical charge transport of diodes based on semi-insulating GaAs. In: APCOM 2002. Eds.: J.Mudroň et al. Liptovský Mikuláš: Military Academy, 2002. ISBN: 80-8040-186-1. P. 90-94.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., Pelfer, P., : Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP. Nuclear Instrum. Methods in Physics Research A 487 (2002) 27-32.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Huran, J., Boháček, P., Ferrari, C., Kordoš, P., Förster, A., : Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 145.

  • 2001

Darmo, J., Dubecký, F., Zaťko, B., Nečas, V., Pelfer, P., : An exploration of the semi-insulating GaAs-based particle detector at temperatures below 300 K. Nuclear Instr. Methods in Phys. A 458 (2001) 437-440.

Dubecký, F., Zaťko, B., Boháček, P., Nečas, V., Sekáčová, M., Krempasky, M., : On performance and radiation hardness of radiation detectors based on semi-insulating InP. In: APCOM 2001. Liptovský Mikuláš: Military Academy, 2001. P. 71-76.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., Pelfer, P., : The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

  • 2000

Zaťko, B., Dubecký, F., Darmo, J., Euthymiou, P., Nečas, V., Krempasky, M., Sekáčová, M., Korytár, D., Csabay, O., Harmatha, L., Pelfer, P., : Electrical and detection performance of radiation detector based on bulk semi-insulating InP: Role of detector volume. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 429-432.

Zaťko, B., Dubecký, F., Darmo, J., Krempasky, M., Nečas, V., : Estimation of the active region in radiation detector based on semi-insulating GaAs, J. Electr. Engn. 51 (2000) 249-253.

Dubecký, F., Zaťko, B., Darmo, J., Sekáčová, M., Krempasky, M., Nečas, V., Hlaváč, S., Ruček, M., Senderák, R., Szentpali, B., : On spectrometric performance of GaAs based radiation detectors. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 475-478.

Dubecký, F., Huran, J., Darmo, J., Zaťko, B., Krempasky, M., Boháček, P., Sekáčová, M., Bešše, I., Nečas, V., Hotový, I., Fornari, R., Gombia, E., Pelfer, P., : Performance of radiation detectors based on semiinsulating GaAs and InP. In: Sensors Microsystems. Singapore: World Sci 2000. P. 437-441.

Dubecký, F., Zaťko, B., Darmo, J., Sekáčová, M., Nečas, V., Förster, A., Kordoš, P., : Radiation detector based on bulk semi-insulating GaAs: Role of detector geometry abnd electrode technology. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 187-190.

Zaťko, B., Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Nečas, V., Boháček, P., Ruček, M., : Role of electron technology in performance of radiation detectors based on bulk semi-insulating GaAs. In: APCOM 2000. Liptovský Mikuláš: Military Academy 2000. P. 133-136.

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Zaťko, B., Darmo, J., Krempasky, M., Sekáčová, M., : Semi-insulating InP detectors for solar neutrino experiment. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 99-104.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Boháček, P., Bešše, I., Ruček, M., Nečas, V., Pelfer, P., Senderák, R., Pinčík, E., Somora, M., Kolesár, F., Hudek, P., Kostič, I., : Technology and performance of x-and γ-ray 32 pixel line detector based on semi-insulating GaAs, J. Electrical Engn. 51 (2000) 30-35.

Dubecký, F., Darmo, J., Zaťko, B., Fornari, R., Nečas, V., Krempasky, M., Pelfer, P., Sekáčová, M., Boháček, P., : X-ray and gamma-ray detectors based on bulk semi-insulating GaAs&InP: Present status and prospects. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 151-158.

  • 1999

Dubecký, F., Darmo, J., Zaťko, B., Krempasky, M., Hasenöhrl, S., Procházková, O., Bešše, I., Sekáčová, M., Boháček, P., Pelfer, P., Nečas, V., : Investigation of X-ray and γ-ray detectors based on GaAs and InP with electrodes grown by MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 263.

Zaťko, B., Dubecký, F., : New generation of semiconductor materials for particle detector. In: ELITECH `99. Eds.: J.Tóbik, R.Redhammer. Bratislava: STU 1999. P. 27-30.

Dubecký, F., Krempasky, M., Darmo, J., Nečas, V., Hudek, P., Somora, M., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Kostič, I., : Study of performance of the first 32 pixel line chip for x-and γ-ray detection based on bulk semi-insulating GaAs. In: APCOM ’99. Eds. P. Macko et al. Lipt. Mikuláš: Military Acad. 1999. ISBN: 80-8040-098-9. P. 58.

Dubecký, F., Krempasky, M., Darmo, J., Somora, M., Nečas, V., Hlaváč, S., Hudek, P., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Belov, M., : The first results on GaAs 32 pixel line chip for x- and ç-ray detection. In: Proc. 3rd Inter. Symp. Microelectr. Technolog. Microsyst. Košice: FEI-TU 1999. P. 127-131.

  • 1998

Zaťko, B., Dubecký, F., : New generation of semiconductor materials for particle detector. In: ELITECH 98. Bratislava: TU 1998. P. 222.