Juraj ARBET

• 2019

Huran, J., Boháček, P., Perný, M., Mikolášek, M., Skuratov, V.A., Kobzev, A.P., Šály, V., and Arbet, J.: Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films, J. Phys.: Conf. Ser. 1319 (2019) 012016.

• 2018

Balalykin, N.I., Huran, J., Nozdrin, M.A., Feshchenko, A.A., Kobzev, A.P., Sasinková, V., Boháček, P., and Arbet, J.: Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications, J. Phys.: Conf. Ser. 992 (2018) 012031.

• 2017

Huran, J., Mikolášek, M., Perný, M., Šály, V., Kleinová, A., Sasinková, V., Kobzev, A.P., and Arbet, J.: HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology, J. Integrated Ferroelectr. 184 (2017) 23-31.

Zaťko, B., Hrubčín, L., Sedlačková, K., Boháček, P., Šagátová, A., Sekáčová, M., Arbet, J., Skuratov, V., Nečas, V., : High energy ion detection using 4H-SiC semiconductor detector In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 154-157.

Perný, M., Šály, V., Packa, J., Mikolášek, M., Váry, M., Huran, J., Hrubčín, L., Skuratov, V., Arbet, J., :Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy. J. Phys.: Conf. Ser. 829 (2017) 012016.

Huran, J., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Arbet, J., Kováčová, E., Sekáčová, M., : PECVD silicon carbide films for electromagnetic energy absorption in the 0.1-2.0THz frequency range In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 203-206.

Huran, J., Balalykin, N., Boháček, P., Nozdrin, M., Kováčová, E., Kobzev, A., Haščík, Š., Sekáčová, M., Arbet, J., Ryzá, J., : PECVD silicon carbide films on quartz glass as prospective transmission photocathodes In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 150-153.

Huran, J., Boháček, P., Hrubčín, L., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Kováčová, E.,Arbet, J., : PECVD silicon carbide thin films for harsh environment applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 215-218.

• 2016

Huran, J., Balalykin, N., Haščík, Š., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Dry etching of phosphorus doped SiC thin films prepared by PECVD technology for transmission photocathode In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 35-38.

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Hrubčín, L., Arbet, J., Sekáčová, M., : Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 215-219.

Zaťko, B., Šagátová, A., Boháček, P., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., : The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs. J. Instrument. 11 (2016) C01076.

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Arbet, J., Nečas, V., : The thermal neutron detection using 4H-SiC detectors with 6LiF conversion layer. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 37-41.

Balalykin, N., Huran, J., Nozdrin, M., Feshchenko, A., Kobzev, A., Arbet, J., : Transmission photocathodes based on stainless steel mesh and quartz glass coated with n doped DLC thin films prepared by reactive magnetron sputtering. J. Phys.:Conf. Ser. 700 (2016) 012050.

Huran, J., Perný, M., Hrubčín, L., Skuratov, V., Šály, V., Mikolášek, M., Kobzev, A., Arbet, J., : Xe ion irradiation of heterojunction solar cell structures with ITO antireflection film In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 151-154.

• 2015

Huran, J., Mikolášek, M., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Sekáčová, M., Arbet, J., : HWCD technology of silicon carbide thin films: properties In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 104-107.

Huran, J., Boháček, P., Kobzev, A., Kleinová, A., Sasinková, V., Sekáčová, M., Arbet, J., : Plasma-enhanced chemical vapour deposition of B-doped silicon carbide thin films for heterojunction application. In: 22nd Inter. Symp. on Plasma Chemistry. Antwerpy 2015. Proc. Extend. Abstracts P-III-6-22.

Sasinková, V., Huran, J., Kleinová, A., Boháček, P., Arbet, J., Sekáčová, M., : Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment,. Proc. SPIE 9563 (2015) 95630V.

Huran, J., Balalykin, N., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Transmission photocathodes based on quartz glass coated with N or P-doped SiC thin films prepared by HWCVD technology In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 186-189.

• 2014

Huran, J., Balalykin, N., Feshchenko, A., Kováč, J., Kobzev, A., Arbet, J., : Deuterated diamond like carbon films prepared by reactive magnetron sputtering for transmission photocathode application In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 247-250.

Huran, J., Kleinová, A., Sasinková, V., Kobzev, A., Boháček, P., Sekáčová, M., Arbet, J., : Plasma enhanced chemical vapor deposition of low-k a-SiC:H thin films:FTIR study of chemical bonding In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 168-171.

Huran, J., Boháček, P., Kulikov, S., Bulavin, M., Sasinková, V., Kleinová, A., Kobzev, A., Sekáčová, M., Arbet, J., : Radiation hardness investigation of PECVD silicon carbide layers for PV applications.. In: 40th IEEE Photovoltaic Specialist Conf. – PVSC. IEEE 2014. ISBN: 978-147994398-2. P. 1815-1820.

• 2013

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M.,Arbet, J., Sasinková, V., : The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition,. Applied Surface Sci 267 (2013) 88-91.