Elektrotechnický ústav SAV, v.v.i.

2009

Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., and Vincze, A.: Impact of SF₆ plasma treatment on performance of AlGaN/GaN HEMT, Vacuum 84 (2009) 235-237.

Lalinský, T., Rýger, I., Rufer, L., Vanko, G., Haščík, Š., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., and Vincze, A.: Surface acoustic wave excitation on SF₆plasma-treated AlGaN/GaN heterostructure, Vacuum 84 (2009) 231-234.

2008

Lalinský, T., Rufer, L., Vanko, G., Mir, S., Haščík, Š., Mozolová, Ž., Vincze, A., and Uherek, F.: AlGaN/GaN heterostructure based surface acoustic wave structures for chemical sensors, Applied Surface Sci 255 (2008) 712-714.

Lalinský, T., Držík, M., Jakovenko, J., Vanko, G., Mozolová, Ž., Haščík, Š., Chlpík, J., Hotový, I., Řeháček, V., Kostič, I., Matay, L., and Husák, M.: GaAs based micromachined thermal converter for gas sensors, Sensors Actuators A 142 (2008) 147-152.

Lalinský, T., Rufer, L., Vanko, G., Rýger, I., Haščík, Š., Tomáška, M., Mozolová, Ž., and Vincze, A.: Surface acoustic wave excitation on SF₆ plasma treated AlGaN/GaN heterostructure. In: ASDAM 2008. The 7^th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 311-314.

Vanko, G., Lalinský, T., Tomáška, M., Haščík, Š., Mozolová, Ž., Škriniarová, J., Kostič, I., Vincze, A., and Uherek, F.: Impact of SF6 plasma on DC and microwave performance of AlGaN/GaN HEMT structures. In: ASDAM 2008. The 7^th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 335-338.

Lalinský, T., Vanko, G., Haščík, Š., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A.: DC and microwave performance of SF₆ plasma treated AlGaN/GaN HEMTs. In: Proc. 34^th Inter. Conf. Micro and Nano Engn. Athens: 2008. P. 478.

Lobotka, P., Lalinský, T., Španková, M., Vávra, I., Chromik, Š., Haščík, Š., Šmatko, V., Mozolová, Ž., Kováčová, E., Dérer, J., Gaži, Š., and Gierlowski, P.: Antenna-coupled uncooled THz microbolometer based on micromachined GaAs and LSMO thin film. In IEEE Sensors 2008. Lecce, pp. 604-607.

2007

Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., and Kostič, I.: Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN, Vacuum 82 (2007) 193-196.

Haščík, Š., Hotový, I., Lalinský, T., Vanko, G., Řeháček, V., and Mozolová, Ž.: Preparation of thin GaAs suspended membranes for gas microsensors using plasma etching, Vacuum 82 (2007) 236-239.

2006

Lalinský, T., Vanko, G., Grujbar, M., Mozolová, Ž., Haščík, Š., and Kostič, I.: Nb-Ti/Al/Ni/Au ohmic metallic system to AlGaN/GaN. In: ASDAM 2006. Proc. 6^th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 151-154.

Rufer, L., Lalinský, T., Grobelny, D., Mir, S., Vanko, G., Öszi, Zs., and Mozolová, Ž.: GaAs and GaN based SAW chemical sensors: acoustic part design and technology. In: ASDAM 2006. Proc. 6^th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 165-168.

2005

Lalinský, T., Držík, M., Chlpík, J., Krnáč, M., Haščík, Š., Mozolová, Ž., and Kostič, I.: Thermo-mechanical characterization of micromachined GaAs-based thermal converter using contactless optical methods, Sensors Actuators 123-124 (2005) 99-105.

Lalinský, T., Haščík, Š., Držík, M., Mozolová, Ž., Lampel, G., Peretti, J., Lamine, D., Richter, M.C., Heckmann, O., Hricovini, K., Chlpík, J., and Kostič, I.: Very thin ferromagnetic Fe membranes nanomachined on GaAs substrates. In: Eurosensors XIX: proc. of the 19^th European Conference on Solid-State Transducers, Barcelona, 2005. Amsterdam: Elsevier, 2005. Wpa27.

Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., and Kordoš, P.: Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.

2004

Lalinský, T., Držík, M., Chlpík, J., Krnáč, M. Haščík, Š., and Mozolová, Ž.: Thermo-mechanical characterization of micromachined GaAs based thermal converter using contactless optical methods. In: Eurosensors XVIII. Roma 2004. P. 239.

2003

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Krnáč, M., Tomáška, M., Škriniarová, J., Držík, M., Kostič, I., and Matay, L.: Mechanically fixed and thermally insulated micromechanical structures for GaAs heterostructure based MEMS devices, Microelectronics Int. 20 (2003) 43-47.

Lalinský, T., Krnáč, M., Haščík, Š., Mozolová, Ž., Matay, L., Kostič, I., Hrkút, P., Jakovenko, J., and Husák, M.: Micromechanical thermal converter device based on polyimide-fixed island structure. In: The 2^nd Inter. Confer. on Materials for Advanced Technologies & IUMRS, ICMAT 2003, Singapore, p. 329, Inter. J. Computational Engn. Sci 4 (2003) 543-546.

Haščík, Š., Lalinský, T., Krnáč, M., Mozolová, Ž., Matay, L., Hrkút, P., and Hotový, I.: Polyimide-fixed GaAs island structure prepared using plasma etching technique, Czechoslov. J. Phys. 54 (2004) Suppl. C1001-1005.

Lalinský, T., Krnáč, M., Haščík, Š., Mozolová, Ž., Matay, L., Kostič, I., Hrkút, P., Andok, R., Držík, M., and Chlpík, J.: Micromechanical thermal converter device based on polyimide-fixed island structure. In: MME 2003 – 14^th MicroMechanics Europe Workshop. ISBN 90-808266-1-8. P. 45-48.

2002

Haščík, Š., Mozolová, Ž., Lalinský, T., Tomáška, M., and Kostič, I.: Patterning of a micromechanical coplanar waveguide using a dry etching technique. In: 12^th Int. School VEIT 01. Varna 2001. P. 67, Vacuum 69 (2002) 283-287.

Lalinský, T., Držík, M., Tomáška, M., Krnáč, M., Haščík, Š., Mozolová, Ž., Klasovity, M., and Kostic, I.: Coplanar waveguides supported by InGaP and GaAs/AlGaAs membrane-like bridges, J. of Micromechanics & Microengn. 12 (2002) 465-469.

Pogany, D., Kuzmik, J., Darmo, J., Litzenberger, S., Bychikhin, K., Unterrainer, Z., Mozolová, Ž., Haščík, Š., Lalinský, T., and Gornik, E.: Electrical field mapping in InGaPHEMTs and GaAs terahertz emitters using backside infrared OBIC technique, Microelectron. Reliability 42 (2002) 1673-1677.

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Tomáška, M., Krnáč, M., Škriniarová, J., Držík, M., Kostič, I., and Matay, L.: Mechanically fixed and thermally isolated micromechanical structures for GaAs heterostructures based MEMS devices. In: Proc. of the 2002 Int. Symp. on Microelectronics. Ed. J.R. Drehle. Denver, IMAPS 2002. ISBN 0-930815-66-1. P. 87.

Lalinský, T., Držík, M., Matay, L., Kostič, I., Mozolová, Ž., Haščík, Š., and Krajcer, A.: GaAs cantilever and bridge membrane-like structures fully compatible with AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs based HFETs. In: Materials & Process Integration for MEMS. Ed. F.E.H. Tay. Boston: Kluwer Acad. Publ. 2002.ISBN: 1-4020-7175-2. P. 53-79.

Tomáška, M., Krnáč, M., Klasovitý, M., Lalinský, T., Mozolová, Ž., Haščík, Š., and Kostič, I.: Micromachined coplanar waveguide on GaAs Based HFET heterostructures. In: Proc. Inter. Conf. Microwaves, Radar and Wireless Communications – MIKON 02. Vol. 3. Gdansk: 2002. P. 825-828.

2001

Gilabert, A., Plecenik, A., Fröhlich, K., Gaži, Š., Pripko, M., Mozolová, Ž., Machajdík, D., Beňačka, Š., Medici, M.G., Grajcar, M., and Kúš, P.: Photoinduced insulator-metal transition in La_0.81MnO₃/Al₂O₃/Nb tunnel junctions, Applied Physics Letters 78 (2001) 1712-1714.

Kuzmik, J., Hasenöhrl, S., Haščík, Š., Mozolová,Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., and Kordoš, P.:InGaAs/InGaP HEMTs: technological optimization and analytical modeling, Vacuum 61 (2001) 333-337.

Lalinský, T., Škriniarová, J., Kostič, I., Hart van der, A., Hrkút, P., Haščík, Š., Matay, L., Mozolová,Ž., and Kordoš, P.: T-shaped gates for heterostructure field effect transistors, Vacuum 61 (2001) 328-332.

Lalinský, T., Škriniarová, J., Kuzmík, J., Hasenöhrl, S., Fox, A., Tomáška, M., Mozolová, Ž., Kordoš, P., Kovačik, T., and Haščík, Š.: Technology and performance of 150 nm gate length InGaP/ InGaAs/GaAs pHEMT, Vacuum 61 (2001) 323-327.

Lalinský, T., Hrkút, P., Mozolová, Ž., Kováčik, T., and Krajcer, A.: Thermal performance and stability of poly Si/Pt(Ni) thin film temperature sensors on GaAs. In: Transducers ’01. Eurosensors XV : 11^th Int. Conf. on Solid-State Sensors and Actuators June 10-14, 2001, Munich, Germany. Heidelberg: Springer-Verlag, 2001. P. 1496-1499.

Lalinský, T., Matay, L., Burian, E., Mozolová, Ž., Haščík, Š., Kostič, I., and Držík, M.: InGaP/polyimide membrane-like bridges fully compatible with InGaP/InGaAs/GaAs based HFETs. In: Proc. of the Int. MEMS Workshop 2001 : iMEMS. 4-6 July 2001, National University of Singapore, Singapore. Singapore, 2001. P. 362-368.

Lalinský, T., Držík, M., Tomáška, M., Kostič, I., Matay, L., Mozolová, Ž., and Haščík, Š.: Coplanar waveguide supported by InGaP membrane-like bridge. In: 12^thMicromechanics Europe Workshop : MME 2001. Proceedings. Cork: Ireland’s ICT Research Centre, 2001. P. 273-276.

Tomáška, M., Lalinský, T., Krnáč, M., Klasovitý, M., Mozolová, Ž., Haščík, Š., and Kostič, I.: Micromechanical coplanar waveguide compatible with pseudomorphic AlGaAs/InGaAs/GaAs based HFETs. In: EDMO 2001 : Int. Symposium on Electron Devices for Microwave and Optoelectronic Applications. Vienna: Technical Univ. of Vienna, 2001. P. 211.

2000

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., and Hatzopoulos, Z.:Performance of GaAs micromachined microactuator, Sensors & Actuators A 85(2000) 365-370.

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., and Kuzmik, J.: Thermal actuation of a GaAs cantilever beam, J. of Micromechanics & Microengn. 10 (2000) 293-298.

Lalinský, T., Hrkút, P., Mozolová, Ž., and Kováčik, T.: Poly Si/Ni(Pt) thin film resistance temperature sensors on GaAs. In: ASDAM 2000 : 3^rd Int. EuroConf. on Advanced Semiconductor Devices and Microsystems. Piscataway, IEEE 2000. P.395-398.

1999

Lalinský, T., Haščík, Š., Mozolová, Ž ., Burian, E., and Držík, M .: The improved performance of GaAs micromachined power sensor microsystem, Sensors & Actuators A 76 (1999) 241-246.

Lalinský, T., Burian, E., Držík, M., Kuzmik, J., Haščík, Š., and Mozolová, Ž .: GaAs cantilever based thermally excited microactuator. In: Proc. of the 10^th Micromechanics Europe Workshop – MME ’99. Orsay, Institut d’Electronique Fondamentale 1999. P. 219-222.

1998

Lalinský, T., Breza, J., Vogrinčič, P., Osvald, J., Mozolová, Ž ., and Šišolák, J.: Iridium-based multilayer contacts to n-GaAs, Solid State Electronics 42 (1998) 205.

Cambel, V., Eliáš, P., Kúdela, R., Olejníková, B., Novák, J., Ďurica, M., Majoroš, M., Kvitkovič, J., Mozolová, Ž ., and Hudek, P.: Preparation, characterization and application of microscopic linear Hall probe arrays, Solid State Electronics 42 (1998) 247.

Haščík, Š., Lalinský, T., Mozolová, Ž ., and Kuzmík, J.: Patterning of cantilever for power sensor microsystem, Vacuum 51 (1998) 307.

La linský, T., Haščík, Š., Mozolová, Ž ., Kuzmík, J., and Hatzopoulos, Z.: GaAs power sensor microsystem technology and characterization, Sensors & Materials 10 (1998) 241.

Lalinsk ý, T., Držík, M., Haščík, Š., Mozolová, Ž ., Kuzmík, J., and Hatzopoulos, Z.: Study of bimetallic efekt in GaAs cantilever beam of power sensor microsystem. In: Proc. 2^ndInt. Conf. on Advanced Semiconductor Devices and Microsystems – ASDAM 98. Ed. J.Breza. Piscataway, IEEE 1998. P. 331.

Lalinský, T., Hotový, I., Haščík, Š., Mozolová, Ž ., Kuzmík, J., and Pogany, D.: Thin films resistence temperature sensor on GaAs. In: Proc. 2^nd Int. Conf. on Advanced Semiconductor Devices and Microsystems – ASDAM 98. Ed. J.Breza. Piscataway, IEEE 1998. P. 243.

Burian, E., Pogany, D., and Lalinský, T., Haščík, Š., and Mozolová, Ž .: Simulation and characterisation of thermal properties of GaAs micromachined power sensor microsystem. In: Heterostructure Epitaxy and Devices – HEAD’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht, Kluwer Academic Publ. 1998. P. 281.

Burian, E., Lalinský, T., Pogany, D ., Haščík, Š., and Mozolová, Ž .: Using semi-analytical solution to heat flow eguation in gaseous environment to obtain ambient-dependent thermal characteristics of a PSM cantilever beam. In: Proc. NEXUSPAN Workshop. Budapest (Hungary) 1998. P. 5.

Lalinský, T., Držík, M., Šišolák, J., Haščík, Š., Mozolová, Ž ., Burian, E., and Hatzopoulos, Z.: Study of thermal effects in a GaAs power sensor microsystems. In: Proc. NEXUSPAN Workshop. Budapest (Hungary) 1998. P. 170.

Lalinský, T., Haščík, Š., Mozolová, Ž. Držík, M., and Hatzopoulos, Z.: Micromachined power sensor microsystem. In: Proc. Micromechani c EUROPE Conf. Ulwik (Norway) 1998. P. 139.

Lalinský, T., Haščík, Š., Mozolová, Ž. Držík, M., and Hatzopoulos, Z.: The improved performance of a GaAs micromachined power sensor microsystem. In: EUROSENSORS XII Conf. Southampton (England) 1998. P. 739 .

1997

Kuzmik, J., Darmo, J., Kúdela, R., Haščík, Š., and Mozolová, Ž .: Schottky contacts on reactive-ion etched InGaP, J. of Vacuum Sci & Technology B 15 (1997) 2016.

Lalinský T., Haščík Š., Mozolová Ž ., Burian E., Kuzmik J.: Micromachined power sensor microsystems based on GaAs cantilever beams. In: Nexus Academic Newsletter 1997. P. 13.

Lalinský, T., Burian, E., Mozolová, Ž ., Haščík, Š., Kuzmík, J., Boháček, P., and Hatzopoulos, Z.: The improvement in GaAs power sensor microsystem technology ans simulation. In: Proc. MICROSIM II Lausanne, „Simulation and Design of Microsyste ms and Microstructures“. Eds. R.A. Adey, Ph. Renaud. Southamton 1997. P. 43.

Haščík, Š., Mozolová, Ž ., Lalinský, T., Kuzmík, J., Burian, E., Pogany, D., and Matay, L.: The properties of new GaAs power sensor microsystem (PSM) topology design. In: 7^th Joint Vacuum Conf. of Hungary, Austria, Croatia and Slovenia JVC-7. Debrecen (Hungary) 1997. P. 143.

1996

Lalinský, T., Osvald, J., Machajdík, D., Mozolová, Ž ., Šišolák, J., Constantinidis, G., and Kobzev, A.P.: High-temperature stable Ir-Al/n-GaAs Schottky diodes: Effect of the barrier height controlling, J. of Vacuum Sci & Technology 14 (1996) 657.

Haščík, Š., Lalinský, T., Kuzmík, J., Porges, M., and Mozolová, Ž. : Fabrication of thin GaAs cantilever beams for power sensor microsystem by RIE, Vacuum 47 (1996) 1215-1217.

Kuzmík, J. , Darmo, J., Haščík, Š., Kúdela, R., and Mozolová, Ž .: Study of Schottky contact formation on RIE-etched InGaP. In: Proc. Int. Conf. Advanced Semiconductor Devices and Microsystems – ASDAM 96. Ed. T.Lalinský. Bratislava 1996. P. 9.

Lalinský, T., Osva ld, J., Breza, J., Vogrinčič, P., Mozolová, Ž ., and Šišolák, J.: Indium-based multilayer contact systems to n-GaAs. In: Proc. Int. Conf. Advanced Semiconductor Devices and Microsystems – ASDAM 96. Ed. T.Lalinský. Bratislava 1996. P. 33.

Lalinský, T., Ku zmík, J., Haščík, Š., Mozolová, Ž ., and Hatzopoulos, Z.: GaAs power sensor microsystem technology and characterization. In: Proc. Int. Conf. Advanced Semiconductor Devices and Microsystems – ASDAM 96. Ed. T.Lalinský. Bratislava 1996. P. 301.

Cambel, V., Eliáš, P., Kúdela, R., Olejníková, B., Novák, J., Ďurica, M., Majoroš, M., Kvitkovič, J., Mozolová, Ž ., and Hudek, P.: Preparation, characterization and application of microscopic linear hall probe arrays. In: Proc. Int. Conf. Advanced Semiconductor Devices and Microsystems – ASDAM 96. Ed. T.Lalinský. Bratislava 1996. P. 153.

Malacký, L., Kuzmík, J., Mozolová, Ž., Kučera, M., Lubke, K., and Wehmann, H. : InGaAs/GaAs pseudomorphic double delta dopes Hemts. Some limitations of design. In: 2 ^nd Int. Workshop on Heterostructure Epitaxy and Devices, Eds. J. Novák and A. Schlachetzki, NATO ASI Series 3, High Technology 11, Kluwer Academic Publ. Dordrecht 1996. P. 277.

Lalinský, T., Šafránková, J., Mozolová, Ž ., Harman R., Németh Š., and Bujdák M.: Characteristics of multiple d-doped GaAs structures. In: Heterostructure Epitaxy and Devices, Eds. J. Novák and A. Schlachetzki, NATO ASI Series 3, High Technology 11. Dordrecht, Kluwer Acad. Publ. 1996. P. 317.

1995

Lalinský, T., Kuzmik, J., Porges, M., Haščík, Š., Mozolová, Ž ., and Grno, L.: Monolithic GaAs MESFET power sensor microsystem, Electronics Lett. 31 (1995) 1914.

Lalinský, T., Osvald, J., Mozolová, Ž ., Šišolák, J., and Constantinidis, G.: Ir-Al bimetallic Schottky contact system on GaAs. In: Slovenian-Hungarian-Croatian-Austrian 6^thJoint Vacuum Conf. Bled (Slovinsko) 1995, Fizika A 4 (1995) 191.

Lalinský , T., Porges, M., Šafránková, J., Kuzmík, J., Boháček, P., Mozolová, Ž., and Ďuríček, Ľ.: GaAs submicron heterostructure devices. In: Proc. of the 6 ^thNational Conf. on Microwave Techniques Miteko ’95 Pardubice 1995. P. 63.

1994

Dubecký, F., Darmo, J., Betko, J., Mozolová, Ž ., and Pelfer, P.G.: C-V analysis of the Schottky barrier in undoped semi-insulating GaAs, Semicond. Sci & Technology 9 (1994) 1654.

Lalinský, T., Gregušová, D., Mozoľová , Ž., Breza, J., and Vogrinčič, P.: High-temperature stable In-Al/n-GaAs Schottky diodes, Applied Physics Lett. 64 (1994) 1818.

Gregušová, D., Lalinský, T., Mozolová, Ž ., Machajdík, D., Pochaba, I., Vávra, I., and Porges, M.: Characterization of WN_x metallization prepared by ion implantation of nitrogen, Thin Solid Films 249 (1994) 250.

1993

Gregušová, D., Lalinský, T., Mozolová, Ž., Breza, J., Vogrinčič, J.: The effect of oxygen in WN films on thermal s tability of WN /GaAs interface, J. of Materials Sci 4 (1993) 197.

Šafránková, J., Porges, M., Lalinský, T., Mozolová, Ž., Hudek, P., Kostič, I., Kraus, J., von Wendorff, W., Tegude, F.J., and Jäger, D.: Photoelectrical properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET, Physica Status Solidi A 140 (1993) K111.

1992

Lalinský, T., Kuzmík, J., Gregušová, D., Mozoľová , Ž ., Breza, J., Feciško, M., and Seidl, P.: Properties of WN_x/GaAs Schottky contacts prepared by ion implantation of nitrogen, J. of Materials Sci 3 (1992) 157.

1990

Kuzmik, J., Lalinský, T., Mozoľová , Ž ., and Porges, M.: DC performance of short ion-implanted GaAsMESFETs, the role of gate length shortening, Solid State Electronics 33 (1990) 1223.

Porges, M., Lalinský, T., Mozoľová , Ž ., and Kuzmík, J.: A three layer model of planar alloyed ohmic contacts to n-GaAs, Solid State Electronics 33 (1990) 1531.

1989

Lalinský, T., Kuzmík, J., Porges, M., Mozoľová , Ž ., and Gregušová, D.: Technology and characterization of a submicrometer GaAs length GaAs MESFETs, Crystal Properties & Preparation 19-20 (1989) 259.

Šafránková, J., Lalinský, T., Kuzmík, J., Mozoľová , Ž ., Porges, M., and Gregušová, D.: Preparation and Properties of GaAs double-Schottky-interdigitated photodetectors, Crystal Properties & Preparation 19-20 (1989) 315.

Ing. Želmíra MOZOLOVÁ