Elektrotechnický ústav SAV, v.v.i.

2021

Rýger, I., Lobotka, P., Steiger, A., Chromik, Š., Lalinský, T., Raida, Z., Pítra, K., Zehetner, J., Španková, M., Gaži, Š., Sojková, M., and Vanko, G.: Uncooled antenna-coupled microbolometer for detection of terahertz radiation, J. Infrared, Millimet., Terahertz Waves 42 (2021) 462–478.

2020

Racko, J., Lalinský, T., Mikolášek, M., Benko, P., Thiele, S., Schwierz, F., and Breza, J.: Vertical current transport processes in MOS-HEMT heterostructures, Applied Surface Sci 527 (2020) 146605.

2018

Babchenko, O., Vanko, G., Gerboc, M., Ižák, T., Vojs, M., Lalinský, T., and Kromka, A.: Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C, Diamond Related Mater. 89 (2018) 266-272.

Chromik, Š., Španková, M., Talacko, M., Dobročka, E., and Lalinský, T.: Some peculiarities at preparation of Bi₄Ti₃O₁₂ films for bolometric applications, Applied Surface Sci 461 (2018) 39-43.

Racko, J., Mikolášek, M., Lalinský, T., Grmanová, A., Benko, P., Kadlečíková, M., Harmatha, L., and Breza, J.: High-field electron mobility model of vertical charge transport in Al/Al₂O₃/GaN/AlGaN/GaN heterostructures, AIP Conf. Proc. 1996 (2018) 020038.

2017

Osvald, J., Lalinský, T., Vanko, G., : Analysis of current transport in gate oxide based (MOS) Schottky diodes on GaN/AlGaN/GaN In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 52-55. (VEGA 2/0112/17). (APVV 14-0613). (CENTE II).

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, Ľ., Vogrinčič, P., and Vincze, A.: Ir/Al multilayer gates for high temperature operated AlGaN/GaN HEMTs, Phys. Status Solidi A 214 (2017) 1700691.

Zehetner, J., Kasemann, S., Vanko, G., Dzuba, J., Lalinský, T., Nürnberger, S., : Micro structuring of diaphragms for III-N MEMS using short pulsed laser ablation In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 287-290.. (SASPRO 0068/01/01). (APVV 14-0613). (VEGA 2/0150/17).

Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment,. Applied Surface Sci 395 (2017) 92-97. (SASPRO 0068/01/01). (APVV 0455-12). (CENTE).

Kutiš, V., Paulech, J., Gálik, G., Lalinský, T., Vanko, G., Hrabovský, J., Jakubec, J., : Thermal analysis of microbolometer In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 267-271.. (APVV 14-0613).

Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., Lobotka, P., :Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane. Sensors Actuators A 265 (2017) 321–328. (APVV 14-0613). (APVV 0450-10). (APVV 0455-12). (CENTE II).

2016

Lalinský, T., Vanko, G., Dzuba, J., Kutiš, V., Gálik, G., Paulech, J., Držík, M., Chromik, Š., and Lobotka, P.: Thermo-mechanical analysis of uncooled La_0.67Sr_0,33MnO₃ microbolometer made on circular SOI membrane, Procedia Engn. 168 (2016) 733-736.

Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., Lalinský, T., : Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors. Microsyst. Technol. 22 (2016) 1883-1892.

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., Lucki, M., Kraus, S., : Micro structuring of bulk SiC substrates by femtosecond laser ablation. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 302-305. (SK-AT-0019-10). (APVV 0450-10).

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., : Nanostructuring of bulk Si and SiC substrates by femtosecond laser ablation for membrane fabrication and surgace functionalization In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 223-226.

Babchenko, O., Vanko, G., Dzuba, J., Ižák, T., Vojs, M., Lalinský, T., Kromka, A., : Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 157-160. (SASPRO 0068/01/01). (APVV 0455-12).

Dzuba, J., Vanko, G., Babchenko, O., Lalinský, T., Horvát, F., Szarvas, M., Kováč, T., Hučko, B., : Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 227-230. (APVV 14-0613). (APVV 0455-12). (VEGA 1/0712/14).

2015

Chromik, Š., Štrbik, V., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Beňačka, Š., : Advanced perovskite thin films and structures for applications. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 64-67.. (APVV-0494-11). (APVV 14-0613). (VEGA 2/0120/14). (VEGA 2/0173/13).

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Kutiš, V., Zehetner, J., Lalinský, T., : AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism. Applied Phys. Lett. 107 (2015) 122102. (APVV 0455-12). (APVV 0450-10). (VEGA 1/0712/14).

Dzuba, J., Vanko, G., Vojs, M., Rýger, I., Ižák, T., Jirásek, V., Kutiš, V., Lalinský, T., : Finite element analysis of AlGaN/GaN micro-diaphragms with diamond Proc. SPIE 9517 (2015) 95171I.

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Benčurová, A., Nemec, P., Andok, R., Tomáška, M., : GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity. Sensors Actuators A 227 (2015) 55-62. (CENTE). (APVV 0199-10). (APVV 0450-10). (VEGA 1/0839/12).

Lalinský, T., Vanko, G., Dobročka, E., Vincze, A., Dzuba, J., Babchenko, O., : Ir/Al multilayer systems for high temperature stable gates of AlGaN/GaN HEMTs. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 91-92.. (VEGA 1/0839/12). (APVV 0455-12). (SASPRO 0068/01/01).

Zehetner, J., Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Benkler, M., Lucki, M., : Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions Proc. SPIE 9517 (2015) 951721.

Vanko, G., Dzuba, J., Rýger, I., Vallo, M., Lalinský, T., : MEMS pressure sensor with an AlGaN/GaN based high electron mobility transistor In: NSTI: Advanced Materials – TechConnect Briefs 2015. Eds. B. Romanowicz, M. Laudon. Taylor and Francis: 2015. ISBN: 978-149874730-1. P. 290-293.

Babchenko, O., Vojs, M., Dzuba, J., Lalinský, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 20-21..(APVV 0455-12). (SASPRO 0068/01/01).

Dzuba, J., Držík, M., Ižák, T., Vojs, M., Babchenko, O., Lalinský, T., Kutiš, V., Jirásek, V., Kromka, A., Vanko, G., : Stress analysis in diamond-coated AlGaN/GaN diaphragms for MEMS pressure sensors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 44.

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Kutiš, V., Haško, D., Choleva, P., Lalinský, T., : Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor. J. Micromech. Microengn. 25 (2015) 015001.. (APVV 0455-12). (APVV 0450-10). (VEGA 1/0712/14).

2014

Gálik, G., Kutiš, V., Murín, J., Lalinský, T., : 3D FEM model of piezoelectric saw sensor. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 316-319. (APVV 0450-10).

Vanko, G., Vojs, M., Ižák, T., Potocký, P., Choleva, P., Marton, M., Rýger, I., Dzuba, J., Lalinský, T., : AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 263-266. (APVV 0455-12). (APVV 0199-10). (VEGA 2/0167/13).

Rýger, I., Vanko, G., Lalinský, T., Dzuba, J., Vallo, M., Kunzo, P., Vávra, I., : Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor Key Engn. Mater. 605 (2014) 491-494. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

Dzuba, J., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Influence of temperature on the sensitivity of the AlGaN/GaN C HEMT based piezoelectric pressure sensor In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 5-8.. (APVV 0455-12). (APVV 0450-10).

Chromik, Š., Štrbik, V., Dobročka, E., Roch, T., Rosová, A., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Ralbovský, M., Choleva, P., : LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers. Applied Surface Sci 312 (2014) 30-33. (APVV-0494-11). (SK-CN-0012-12). (VEGA 2/0120/14). (VEGA 2/0173/13). . (CENTE II).

Dzuba, J., Držík, M., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Modal analysis of Gallium Nitride membrane for pressure sensing device Key Engn. Mater. 605 (2014) 404-407. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Vojs, M., Vincze, A., Dobročka, E., : Processing technology of MEMS sensors using III-N material system In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 39-43. (APVV 0455-12). (APVV 0450-10).

Rýger, I., Vanko, G., Lalinský, T., Kunzo, P., Vallo, M., Vávra, I., Plecenik, T., : Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability. Sensors Actuators B 202 (2014) 1-8. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Lalinský, T., Kutiš, V., Haško, D., Srnánek, R., : The AlGaN/GaN C-HEMT diaphragm-based MEMS pressure sensor for harsh environment In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 142-145. (APVV 0455-12). (APVV 0450-10).

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Nemec, P., Benčurová, A., Tomáška, M., : The GaN/SiC heterostructure-based hydrogen SAW sensor operating in GHz range. Procedia Engn. 87 (2014) 260-263.(APVV 0199-10). (VEGA 1/0839/12).

Zehetner, J., Vanko, G., Choleva, P., Dzuba, J., Rýger, I., Lalinský, T., : Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 259-262.

2013

Vanko, G., Lalinský, T., Ižák, T., Vojs, M., Vincze, A., Dobročka, E., Vallo, M., Dzuba, J., Rýger, I., Kromka, A., : AlGaN/GaN high electron mobility transistors for high temperatures In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 55-59. (APVV 0455-12). (APVV 0199-10). (VEGA 1/0839/12).

Vanko, G., Hudek, P., Dzuba, J., Choleva, P., Kutiš, V., Vallo, M., Rýger, I., Lalinský, T., : Bulk micromachining of SiC substrate for MEMS sensor applications. Microelectron. Engn. 110 (2013) 260-264.(SK-AT-0019-10). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

Novák, P., Dobročka, E., Vallo, M., Lalinský, T., Ballo, P., : Depth distribution of chemical phase concentration determined by grazing incidence X-ray diffraction. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 96-98. (VEGA 2-0147-11). (CENTE II).

Le Boulbar, E., Edwards, M., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C., Allsopp, D., : Effect of bias conditions on pressure sensors based on AlGaN/GaN high electron mobility transistor. Sensors Actuators A 194 (2013) 247-251. (MORGaN).

Dobročka, E., Novák, P., Vallo, M., Lalinský, T., : Grazing incidence X-ray diffraction: study of depth distribution of chemical phase concentration. Mater. Struct. 20 (2013) 61-62.

Vallo, M., Lalinský, T., Dobročka, E., Vanko, G., Vincze, A., Rýger, I., : Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT,. Applied Surface Sci 267 (2013) 159-163. (MORGaN). (APVV 0450-10). (APVV 0655-07). (APVV 0199-10). (VEGA-2-0163-09).

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167. (APVV 0450-10). (APVV 0199-10). (VEGA 1/0839/12).

Vanko, G., Hudek, P., Zehetner, J., Dzuba, J., Choleva, P., Vallo, M., Rýger, I., Lalinský, T., : MEMS pressure sensor fabricated by advanced bulk micromachining techniques, Proc. SPIE 8763 (2013) 8763-101.

Kutiš, V., Gálik, G., Rýger, I., Paulech, J., Murín, J., Hrabovský, J., Lalinský, T., : Modal and transient analysis of SAW MEMS sensor. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 221-224. (APVV 0450-10).

Florovič, M., Kováč, J., Hronec, P., Škriniarová, J., Donoval, D., Lalinský, T., Vanko, G., : On-state stress investigation of AlGaN/GaN HEMT. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 44-47.

Kutiš, V., Dzuba, J., Paulech, J., Murín, J., Hrabovský, J., Lalinský, T., : Piezoelectric analysis of MEMS pressure sensor. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 225-228. (APVV 0450-10).

Vincze, A., Vallo, M., Dobročka, E., Rýger, I., Vanko, G., Lalinský, T., : SIMS and XRD analysis on Ir contact layers for AlGaN/GaN HEMT structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 295-298. (APVV 0450-10).

2012

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinskyy, L., Plecenik, T., :AlGaN/GaN HEMT based hydrogen sensors with gate absorption layers formed by high temperature oxidation. Procedia Engn. 47 (2012) 518-521. (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A., : AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation. Applied Phys. Lett. 100 (2012) 092105. (MORGaN). (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA-2-0163-09).

Rýger, I., Tomáška, M., Vanko, G., Lalinský, T., : An AlGaN/GaN based GHz-range surface acoustic wave oscillator for sensor applications. . In: Proc. 22nd Inter. Conf. Radioelektronika 2012. Eds. R. Balada et al. Brno: Univ. Technol. 2012. ISBN 978-80-214-4468-3. P. 279-282.

Vanko, G., Vallo, M., Rýger, I., Dzuba, J., Lalinský, T., : Conductive metal oxide based gates for self aligned technology of AlGaN/GaN HEMT. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 19-22.

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Dzuba, J., Vallo, M., Satrapinskyy, L., Plecenik, T., Chvála, A., : Gates of AlGaN/GaN HEMT for high temperature gas sensing applications. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 23-26.

Vanko, G., Vallo, M., Bruncko, J., Lalinský, T., : Laser ablated ZnO layers for ALGaN/GaN HEMT passivation. Vacuum 86 (2012) 672-674. (APVV 0655-07). (VEGA-2-0163-09).

Vanko, G., Zehetner, J., Choleva, P., Lalinský, T., Hudek, P., : Laser ablation: A supporting technique to bulk micromachining of SiC. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 259-262.

Kutiš, V., Dzuba, J., Paulech, J., Murín, J., Lalinský, T., : MEMS piezoelectric pressure sensor-modelling and simulation. Procedia Engn. 48 (2012) 338-345. (APVV 0450-10).

Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I., : Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device. Microelectron. Engn. 98 (2012) 578–581. (APVV 0655-07). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

Dzuba, J., Lalinský, T., Vanko, G., Vallo, M., Rýger, I., Kutiš, V., Královič, V., : Modeling and simulation of AlGaN/GaN piezoelectric MEMS pressure sensor. In: 13th Mechatronics Forum Inter. Conf. – Mechatronics 2012. Linz 2012. P. 773-778.

Kutiš, V., Gálik, G., Královič, V., Rýger, I., Mojto, E., Lalinský, T., : Modelling and simulation of SAW sensor using FEM. Procedia Engn. 48 (2012) 332-337. (APVV 0450-10).

Chromik, Š., Lalinský, T., Dobročka, E., Gierlowski, P., Štrbik, V., Laurenčíková, A., Španková, M., : Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology. Supercond. Sci Technol. 25 (2012) 035008. (VEGA 2-0164-11). (VEGA 2/0144/10). (VEGA-2-0163-09). (APVV 0450-10). (APVV 51-040605).

Edwards, M., Le Boulbar, E., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C., Allsopp, D., : Pressure and temperature dependence of GaN/AlGaN HEMT based sensors on a sapphire membrane,. Phys. Status Solidi c 9 (2012) 960-963. (MORGaN).

Vincze, A., Držík, M., Michalka, M., Bruncko, J., Vallo, M., Vanko, G., Lalinský, T., : SIMS depth profiling of metallization contact layers for AlGaN/GaN heterostructures. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 231-234.

2011

Rýger, I., Vanko, G., Lalinský, T., Vallo, M., Tomáška, M., Ritomský, A., : AlGaN/GaN based SAW-HEMT devices for chemical gas sensors operating in GHz range. Procedia Engn. 25 (2011) 1101-1104. (APVV 0655-07). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Benčurová, A., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Sensors Actuators A 172 (2011) 98-102. (APVV 0655-07). (MORGaN). (VEGA-2-0163-09).

Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I., : Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs. Microelectr. Engn. 88 (2011) 166-169.

Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M., : Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor. Sensors Actuators A 172 (2011) 386-391. (APVV 0655-07). (MORGaN). (VEGA-2-0163-09).

Lalinský, T., Hudek, P., Vanko, G., Choleva, P., Vallo, M., Matay, L., Kostič, I., Držík, M., : Micromachined pressure sensors based on AlGaN/GaN circular HEMT sensing devices In: 37th Inter. Conf. Micro Nano Engn. – MNE 2011. Berlin 2011.

Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M., :Piezoelectric response of AlGaN/GaN-based circular-HEMT structures. Microelectr. Engn. 88 (2011) 2424-2426.

2010

Lalinský, T., Rýger, I., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : AlGaN/GaN based SAW-HEMT structures for chemical gas sensors, Procedia Engn. 5 (2010) 152-155.

Vallo, M., Lalinský, T., Vanko, G., Držík, M., Haščík, Š., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT for piezoelectric MEMS stress sensor appliocations. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 56-59.

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Procedia Engn. 5 (2010) 1405-1408.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures. Applied Surface Sci 257 (2010) 1254-1256.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures. Microelectr. Engn. 87 (2010) 2208-2210. (VEGA-2-0163-09).

Stuchlíková, Ľ., Šebok, J., Petruš, M., Harmatha, L., Benkovská, J., Kováč, J., Škriniarová, J., Lalinský, T., Paszkiewicz, R., Tlaczala, M., : Deep energy levels in Al0,19Ga0,81N/GaN single-quantum-well structures . In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 158-161.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., Kordoš, P., Donoval, D., Kinder, R., Tomáška, M., : Electrical properties of Al0,3Ga0,7N/GaN heterostructure field effect transistor. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 205-209.

Hotový, I., Tengeri, A., Řeháček, V., Haščík, Š., Lalinský, T., : Gas sensing micromachined structure based on gallium arsenide. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 72-75.

Rýger, I., Lalinský, T., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : HEMT-SAW structures for chemical gas sensors in harsh environment In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 131-134.

Hudec, B., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., Fröhlich, K., : High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

Stuchlíková, Ľ., Šebok, J., Rybár, J., Petruš, M., Nemec, M., Harmatha, L., Benkovská, J., Kováč, J., Škriniarová, J., Lalinský, T., Paszkiewicz, R., Tlaczala, M., : Investigation of deep energy levels in heterostructures based on GaN by DLTS. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 135-138.

Liday, J., Vogrinčič, P., Hotový, I., Bonanni, A., Sitter, H., Lalinský, T., Vanko, G., Řeháček, V., Breza, J., Ecke, G., : Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization. J. Electr. Engn. 61 (2010) 378-381.

Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbik, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J., : Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate. Applied Surface Sci 256 (2010) 5618-5622.

2009

Stuchlíková, Ľ., Harmatha, L., Šebok, J., Vallo, M., Šramatý, R., Petruš, M., Kováč, J., Benkovská, J., Škriniarová, J., Lalinský, T., Paszkiewicz, R., Tlaczala, M., : Electrical characterization of Al0,19Ga0,81N/GaN single-quantum-well structures. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 49-52.

Jakovenko, J., Lalinský, T., Držík, M., Ivanova, M., Vanko, G., Husák, M., : GaN, GaAs and silicon based micromechanical free standing hot plates for gas sensing. Procedia Chemistry 1 (2009) 804-807. (APVV 0655-07).

Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT. Vacuum 84 (2009) 235-237.(APVV 0655-07).

Florovič, M., Kováč, J., Škriniarová, J., Donoval, D., Kordoš, P., Paszkiewicz, R., Tlaczala, M., Lalinský, T., Haščík, Š., : Influence of off-state stress on electrical properties of Al0,19Ga0,81N/GaN heterostructure field effect transistor. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 45-48.

Lalinský, T., Rýger, I., Rufer, L., Vanko, G., Haščík, Š., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure. Vacuum 84 (2009) 231-234. (APVV 0655-07). (VEGA-2-0163-09).

2008

Lalinský, T., Vanko, G., : Advanced microelectronic and micro-electro-mechanical structures based on AlGaN/GaN material systems. In: Vzájomná spolupráca pracovísk = kvalitný výskum, Zamerané na vákuové technológie. Škola vákuovej techniky. Bratislava: Slov. vákuová spoločnosť, 2008. ISBN 978-80-969435-4-8. P. 64-69.

Lalinský, T., Rufer, L., Vanko, G., Mir, S., Haščík, Š., Mozolová, Ž., Vincze, A., Uherek, F., : AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors. Applied Surface Sci 255 (2008) 712-714.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., Kordoš, P., Donoval, D., Uherek, F., : Electrical properties of Al0.3Ga0.7N/GaN heterostructure field effect transistor. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 61-64.

Florovič, M., Kováč, J., Kordoš, P., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., Donoval, D., Uherek, F., : Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 103-106.

Lalinský, T., Držík, M., Jakovenko, J., Vanko, G., Mozolová, Ž., Haščík, Š., Chlpík, J., Hotový, I., Řeháček, V., Kostič, I., Matay, L., Husák, M., : GaAs based micromachined thermal converter for gas sensors. Sensors Actuators A 142 (2008) 147-152. (VEGA 2/6097/26).

Hotový, I., Řeháček, V., Mika, F., Lalinský, T., Haščík, Š., Vanko, G., Držík, M., : Gallium arsenide suspended microheater for MEMS sensor arrays Microsyst. Technol. 14 (2008) 629-635.

Tomáška, M., Lalinský, T., Vanko, G., Mišun, M., : High frequency characterization and properties of AlGaN/GaN HEMT structures. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 331-334.

Vanko, G., Lalinský, T., Tomáška, M., Haščík, Š., Mozolová, Ž., Škriniarová, J., Kostič, I., Vincze, A., Uherek, F., : Impact of SF6 plasma on DC and microwave performance of AlGaN/GaN HEMT structures. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 335-338.

Čičo, K., Gregušová, D., Kuzmík, J., di Forte Poisson, M., Lalinský, T., Pogany, D., Delage, S., Fröhlich, K., : InAlN/GaN MOSHEMT with Al2O3 insulating film. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 87-91.

Tomáška, M., Lalinský, T., Vanko, G., Mišun, M., : Microwave characterization and properties of 2 µm gate length AlGaN/Gan HEMT structures. In: COMITE 2008 Praha: Čs. sekce IEEE, 2008. 350 p. ISBN 978-1-4244-2137-4. P. 317-320.

Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., Kostič, I., :Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN. Vacuum 82 (2008) 193-196.

Tengeri, A., Pullmannová, A., Hotový, I., Řeháček, V., Haščík, Š., Lalinský, T., : Preparation and properties of micro-hotplates for gas sensors based on GaAs. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 323-326.

Haščík, Š., Hotový, I., Lalinský, T., Vanko, G., Řeháček, V., Mozolová, Ž., : Preparation of thin GaAs suspended membranes for gas microsensors using plasma etching. Vacuum 82 (2008) 236-239.

Lalinský, T., Rufer, L., Vanko, G., Rýger, I., Haščík, Š., Tomáška, M., Mozolová, Ž., Vincze, A., : Surface acoustic wave excitation on SF6 plasma treated AlGaN/GaN heterostructure. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 311-314.

Lobotka, P., Lalinský, T., Španková, M., Vávra, I., Chromik, Š., Haščík, Š., Šmatko, V., Mozolová, Ž., Kováčová, E., Dérer, J., Gaži, Š., and Gierlowski, P.: Antenna-coupled uncooled THz microbolometer based on micromachined GaAs and LSMO thin film. In IEEE Sensors 2008. Lecce, pp. 604-607.

2007

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Kordoš, P., : AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4nm thick Al2O3 gate oxide. Semicond. Sci Technol. 22 (2007) 947-951.

Jakovenko, J., Husák, M., Lalinský, T., : Design and characterization of MEMS thermal converter Sensors & Transducers J., Special Iss. (2007) 101-110.

Jakovenko, J., Husák, M., Lalinský, T., : Design and characterization of new GaAs micromechanical thermal converter developed for microwave power sensor. In: Nanotech 2007. NSTI Nanotech. CRC Press, 2007. ISBN 1-4200-6349-9. P. 104-107.

Jakovenko, J., Husák, M., Lalinský, T., Držík, M., Vanko, G., : Design and modeling of GaAs based hot plate for Gas sensors. In: DTIP 2007. Ed. K.Chakrabarty et al. EDA Publishing, 2007. ISBN 978-2-35500-000-3. P. 147-150.

Jakovenko, J., Husák, M., Lalinský, T., Držík, M., : Micromechanical GaAs hot plates for Gas sensors Sensors & Transducers J., Special Iss. (2007) 84-92.

Čičo, K., Kuzmík, J., Gregušová, D., Stoklas, R., Lalinský, T., Georgakilas, A., Pogany, D., Fröhlich, K., :Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. Microelectr. Reliability 47 (2007) 790-793.

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Fröhlich, K., Novák, J., Kordoš, P., : Preparation and properties of MOSHFETs based on MOVPE grown AlGaN/GaN heterostructure and MOCVD deposited Al2O3 gate oxide. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 85-88.

Dubecký, F., Boháček, P., Sekáčová, M., Zaťko, B., Lalinský, T., Linhart, V., Šagátová-Perďochová, A., Mudroň, J., Pospíšil, S., : Role of electrode metallization in performance of semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 87-89. (VEGA 2/7170/27).

Držík, M., Chlpík, J., Lalinský, T., : Thermomechanical response of membrane-like MEMS component. Microelectr. Engn. 84 (2007) 1274–1277.

Kordoš, P., Gregušová, D., Stoklas, R., Lalinský, T., Novák, J., : Transconductance enhancement in AlGaN/GaN MOSHEFTs with Al2O3 gate oxide. In: Proc. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice: 2007. P. 381-384.

2006

Rufer, L., Lalinský, T., Grobelny, D., Mir, S., Vanko, G., Öszi, Z., Mozolová, Ž., : GaAs and GaN based SAW chemical sensors: acoustic part design and technology. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 165-168.

Lalinský, T., Držík, M., Jakovenko, J., Husák, M., : GaAs thermally based MEMS devices: fabrication techniques, characterization and modeling. In: MEMS/NEMS handbook: techniques and applications. Vol. 2. Ed. C. T. Leondes. New York: Springer 2006. ISBN: 0-387-24520-0. Chapter 3, pp. 49-109.

Držík, M., Löschner, H., Haugeneder, E., Fallman, W., Hudek, P., Rangelow, I., Sarov, Y., Lalinský, T., Chlpík, J., : Mechanical characterization of membrane like microelectronic components. Microelectr. Engn. 83 (2006) 1036-1042.

Luby, Š., Chitu, L., Majková, E., Senderák, R., Kostič, I., Hrkút, P., Matay, L., Haščík, Š., Lalinský, T., Capek, I., Šatka, A., : Microelectromagnetic matrix for local assembling of magnetic nanoparticles. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 7-10.

Lalinský, T., Vanko, G., Grujbár, M., Mozolová, Ž., Haščík, Š., Kostič, I., : Nb-Ti/Al/Ni/Au ohmic metallic system to AlGaN/GaN. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 151-154.

Rehakova, A., Tengeri, A., Hotový, I., Lalinský, T., Řeháček, V., Spiess, L., Romanus, H., Haščík, Š., : Preparation and characterization of microhotplate for Gas sensors. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 279-282.

Čičo, K., Kuzmík, J., Gregušová, D., Lalinský, T., Georgakilas, A., Pogany, D., Fröhlich, K., : Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 197-200.

2005

Jakovenko, J., Husák, M., Lalinský, T., : Optimization of GaAs MEMS structures for microwave power sensor. In: Nanotechnology Conf. and Trade Show. Boston: Nano Sci Technol. Inst., 2005. ISBN 0-9767985-2-2. P. 606-609.

Rufer, L., Torres, A., Mir, S., Alam, A., Lalinský, T., Chan, Y., : SAW chemical sensors based on AlGaN/GaN piezoelectric material system: acoustic design and packaging considerations. In: EMAP 2005. Tokyo: Tokyo IT 2005. P. 204-208.

Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., Kordoš, P., : Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.

Lalinský, T., Držík, M., Chlpík, J., Krnáč, M., Haščík, Š., Mozolová, Ž., Kostič, I., : Thermo-mechanical characterization of micromachined GaAs-based thermal converter using contactless optical methods. Sensors Actuators 123-124 (2005) 99-105.

2004

Chlpík, J., Držík, M., Lalinský, T., : 2-D thermo-mechanical simulation of the membrane MEMS components. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 319-322.

Jakovenko, J., Husák, M., Lalinský, T., : Design and simulation of micromechanical thermal converter for RF power sensor microsystem. Microelectr. Reliability 44 (2004) 141-148.

Haščík, Š., Lalinský, T., Krnáč, M., Mozolová, Ž., Matay, L., Hrkút, P., Hotový, I., : Polyimide-fixed GaAs island structure prepared using plasma etching technique Czechoslov. J. Phys. 54 (2004) Suppl. C1001-1005.

Jakovenko, J., Husák, M., Lalinský, T., : Thermally isolated MEMS thermo converter for RF power sensor, WSEAS Trans. Systems 3 (2004) 2716 – 2720.

Lalinský, T., Držík, M., Chlpík, J., Krnáč, M., Haščík, Š., Mozolová, Ž., : Thermo-mechanical characterization of micromachined GaAs based thermal converter using contactless optical methods. In: Eurosensors XVIII. Roma 2004. P. 239.

2003

Jakovenko, J., Husák, M., Lalinský, T., : Design and simulation of the GaAs micromechanical thermal converter for microwave transmitted power sensor. In: Proc. Nanotechnol. Conf. San Francisco 2003. P. 332-335.

Gregušová, D., Cambel, V., Fedor, J., Kúdela, R., Šoltýs, J., Lalinský, T., Kostič, I., Bending, S., :Fabrication of a vector Hall sensor for magnetic microscopy. Applied Phys. Lett. 82 (2003) 3704-3706.

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Krnáč, M., Tomáška, M., Škriniarová, J., Držík, M., Kostič, I., Matay, L., : Mechanically fixed and thermally insulated micromechanical structures for GaAs heterostructure based MEMS devices Microelectronics Inter. 20 (2003) 43-47.

Lalinský, T., Krnáč, M., Haščík, Š., Mozolová, Ž., Matay, L., Kostič, I., Hrkút, P., Jakovenko, J., Husák, M., : Micromechanical thermal converter device based on polyimide-fixed island structure Inter. J. Computational Engn. Sci 4 (2003) 543-546.

Lalinský, T., Krnáč, M., Haščík, Š., Mozolová, Ž., Matay, L., Kostič, I., Hrkút, P., Andok, R., Držík, M., Chlpík, J., : Micromechanical thermal converter device based on polyimide-fixed island structure. In: MME 2003. Delft: TUDelft, 2003. ISBN 90-808266-1-8. P. 45-48.

2002

Lalinský, T., Držík, M., Tomáška, M., Krnáč, M., Haščík, Š., Mozolová, Ž., Klasovity, M., Kostič, I., : Coplanar waveguides supported by InGaP and GaAs/AlGaAs membrane-like bridges. J. Micromechanics Microengn. 12 (2002) 465-469.

Burian, E., Lalinský, T., : Effect of polyimide fixation on thermal performance of GaAs cantilever based MEMS: A 3D numerical analysis with DEETEN. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 13.

Pogany, D., Kuzmík, J., Darmo, J., Litzenberger, S., Bychikhin, S., Unterrainer, K., Mozolová, Ž., Haščík, Š.,Lalinský, T., Gornik, E., : Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. Microelectron. Reliability 42 (2002) 1673-1677.

Lalinský, T., Držík, M., Matay, L., Kostič, I., Mozolová, Ž., Haščík, Š., Krajcer, A., : GaAs cantilever and bridge membrane-like structures fully compatible with AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs based HFETs. In: Materials & process integration for MEMS. Ed. F.E.H. Tay. Boston: Kluwer Acad. Publ. 2002. ISBN: 1-4020-7175-2. P. 53-79.

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Tomáška, M., Krnáč, M., Škriniarová, J., Držík, M., Kostič, I., Matay, L., : Mechanically fixed and thermally isolated micromechanical structures for GaAs heterostructures based MEMS devices. In: Inter. Symp. Microelectr. 2002. Ed. J.R. Drehle. Denver: IMAPS 2002. ISBN 0-930815-66-1. P. 87.

Tomáška, M., Krnáč, M., Klasovity, M., Lalinský, T., Mozolová, Ž., Haščík, Š., Kostič, I., : Micromachined coplanar waveguide on GaAs Based HFET heterostructures. In: MIKON 02. Vol. 3. Gdansk: 2002. P. 825-828.

Haščík, Š., Mozolová, Ž., Lalinský, T., Tomáška, M., Kostič, I., : Patterning of a micromechanical coplanar waveguide using a dry etching technique. Vacuum 69 (2002) 283-287.

Majling, J., Plesch, G., Pach, L., Šajgalík, P., Galušek, D., Pánek, Z., Lenceš, Z., Lalinský, T., Kákoš, J., Drábik, M., Znášik, P., Jesenák, K., : Technológia špeciálnych anorganických materiálov. Vysokoškolské skriptá. Bratislava: STU 2002. 243 s. ISBN 80-227-1734-7.

Jakovenko, J., Lalinský, T., Držík, M., Burian, E., Krnáč, M., Husák, M., : Thermal and thermo-mechanical modelling of GaAs micromechanical thermal converter. In: MME 2002. Bucharest: IMT 2002. ISBN 973-0-02472-3. P. 193.

Jakovenko, J., Husák, M., Lalinský, T., : Thermo-mechanical simulation and modeling of RF power sensor microsystem. In: Proc. 2002 Inter. Symp. Microelectr. Washington: IMAPS 2002. ISBN 0-930815-66-1. P. 886.

2001

Lalinský, T., Držík, M., Tomáška, M., Kostič, I., Matay, L., Mozolová, Ž., Haščík, Š., : Coplanar waveguide supported by InGaP membrane-like bridge. In: MME’01. 2001. P. 273.

Gurnik, P., Srnánek, R., McPhail, D., Chater, R., Fearn, S., Harmatha, L., Kordoš, P., Geurts, J., Lalinský, T., : Characterization of delta-doped GaAs grown by molecular beam epitaxy. In: EDMO 2001. Vienna: TU, 2001. P. 9.

Kuzmík, J., Hasenöhrl, S., Kúdela, R., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., Kordoš, P., : InGaAs/InGaP HEMTs: technological optimization and analytical modelling. Vacuum 61 (2001) 333-337.

Lalinský, T., Matay, L., Burian, E., Mozolová, Ž., Haščík, Š., Kostič, I., Držík, M., : InGaP/polyimide membrane-like bridges fully compatible with InGaP/InGaAs/GaAs based HFETs. In: MEMS Workshop 2001. Singapore: Nation. Univ. Singapore 2001. P. 362-368.

Lalinský, T., Matay, L., Haščík, Š., Mozolová, Ž., : Lalinský, T., Matay, L., Haščík, Š., and Mozolová, Ž.: Method of mechanical fixation and thermal insulation of micro(nano)mechanical structures of semiconductor based microsystems. Slov. Patent Appl. 2001. No. 1799-2001.

Jakovenko, J., Husák, M., Lalinský, T., Matay, L., Haščík, Š., Mozolová, Ž., : MEMCAD thermal simulation of GaAs based membrane bridge. In: MME’01. 2001. P. 186.

Tomáška, M., Lalinský, T., Krnáč, M., Klasovity, M., Mozolová, Ž., Haščík, Š., Kostič, I., : Micromechanical coplanar waveguide compatible with pseudomorphic AlGaAs/InGaAs/GaAs based HFETs. In: EDMO 2001. Vienna: TU Vienna, 2001. P. 211.

Haščík, Š., Mozolová, Ž., Lalinský, T., Tomáška, M., Kostič, I., : Pattering of micromechanical coplanar wavequide (MCPW) using dry etching technique. In: 12th Int. School VEIT 01. Varna 2001. P. 67.

Lalinský, T., Škriniarová, J., Kostič, I., van der Hart, A., Hrkút, P., Haščík, Š., Matay, L., Mozolová, Ž., Kordoš, P., : T-shaped gates for heterostructure field effect transistors. Vacuum 61 (2001) 329-332.

Lalinský, T., Škriniarová, J., Kuzmík, J., Hasenöhrl, S., Fox, A., Tomáška, M., Mozolová, Ž., Kordoš, P., Kovačik, T., Haščík, Š., : Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs. Vacuum 61 (2001) 323-327.

Lalinský, T., Hrkút, P., Mozolová, Ž., Kovačik, T., Krajcer, A., : Thermal performance and stability of poly Si/Pt(Ni) thin film temperature sensors on GaAs. In: Transducers ’01. Eurosensors XV. Heidelberg: Springer-Verlag, 2001. P. 1496-1499.

2000

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : Performance of GaAs micromachined microactuator. Sensors Actuators A 85 (2000) 365-370.

Lalinský, T., Hrkút, P., Mozolová, Ž., Kovačik, T., : Poly Si/Ni(Pt) thin film resistance temperature sensors on GaAs. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 395-398.

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., : Thermal actuation of a GaAs cantilever beam J. Micromechanics Microengn. 10 (2000) 293-298.

1999

Lalinský, T., Burian, E., Držík, M., Kuzmík, J., Haščík, Š., Mozolová, Ž., : GaAs cantilever based thermally excited microactuator. In: MME ’99. Orsay: Inst. d’Electronique Fondamentale, 1999. P. 219-222.

Burian, E., Lalinský, T., Držík, M., : Simulation of thermally excited GaAs micromachined microactuator. In: 5th Int. Workshop Thermal Investigations of ICs and Systems. Grenoble: TIMA Lab., 1999. P. 336-338.

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Držík, M., : The improved performance of GaAs micromachined power sensor microsystem Sensors Actuators A 76 (1999) 241-246.

1998

Pogany, D., Seliger, N., Gornik, E., Stoisiek, M., Lalinský, T., : Analysis of the temperature evolution from the time resolved thermo-optical interferometric measurements with few Fabry-Perot peaks J. Applied Phys. 84 (1998) 4495.

Lalinský, T., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : GaAs power sensor microsystem technology and characterization Sensors Mater. 10 (1998) 241.

Lalinský, T., Breza, J., Vogrinčič, P., Osvald, J., Mozolová, Ž., Šišolák, J., : Iridium-based multilayer contacts to n-GaAs Solid State Electron. 42 (1998) 205.

Lalinský, T., Haščík, Š., Mozolová, Ž., Držík, M., Hatzopoulos, Z., : Micro-machined power sensor microsystem. In: MME 98. Eds. P.Ohlchers et el. Ulwik: 1998. P. 139-142.

Lalinský, T., Hrkút, P., Matay, L., Kostič, I., Haščík, Š., Hudek, P., : Nanometer T-gates based on polysilicon/polyimide supported layers. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 183.

Haščík, Š., Lalinský, T., Mozolová, Ž., Kuzmík, J., : Patterning of cantilever for power sensor microsystem Vacuum 51 (1998) 307.

Bujdák, M., Lalinský, T., Harman, R., Kostič, I., Hudek, P., Németh, Š., : Preparation and properties of edge QW delta doped InGaAs/GaAs FET. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 255-258.

Belyaev, A., Konakova, R., Milenin, V., Breza, J., Lalinský, T., : Radiation effects in surface-barrier Ir-Al/a-GaAs structures. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 231.

Hotový, I., Huran, J., Haščík, Š., Lalinský, T., : Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability Vacuum 50 (1998) 403.

Burian, E., Pogany, D., Lalinský, T., Haščík, Š., Mozolová, Ž., : Simulation and characterisation of thermal properties of GaAs micromachined power sensor microsystem. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 281.

Lalinský, T., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : Study of bimetallic efekt in GaAs cantilever beam of power sensor microsystem. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 331.

Lalinský, T., Držík, M., Šišolák, J., Haščík, Š., Mozolová, Ž., Burian, E., Hatzopoulos, Z., : Study of thermal effects in a GaAs power sensor microsystems. In: NEXUSPAN. Eds. V.Szekely et al. Budapest: 1998. P. 170.

Pogany, D., Lalinský, T., Kuzmík, J., Mozolová, Ž., : Study of thermall effects in GaAs micromachined power sensor microsystem by an optical interferometer technique Microelectron. J. 29 (1998) 191.

Lalinský, T., Haščík, Š., Mozolová, Ž., Držík, M., Hatzopoulos, Z., : The improved performance of a GaAs micromachined power sensor microsystem. In: EUROSENSORS XII. Ed. N.M.White. Vol. 1. Bristol: IOP Publ, 1998. P. 739.

Burian, E., Pogany, D., Lalinský, T., Seliger, N., Gornik, E., : Thermal simulation and characterization of GaAs micromachined power sensor microsystems Sensors Actuators 68 (1998) 372.

Lalinský, T., Hotový, I., Haščík, Š., Mozolová, Ž., Kuzmík, J., Pogany, D., : Thin films resistence temperature sensor on GaAs. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 243.

Burian, E., Lalinský, T., Pogany, D., Haščík, Š., Mozolová, Ž., : Using semi-analytical solution to heat flow eguation in gaseous environment to obtain ambient-dependent thermal characteristics of a PSM cantilever beam. In: NEXUSPAN. Eds. V.Szekely et al. Budapest: 1998. P. 55-58.

1997

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Kuzmík, J., : Micromachined power sensor microsystems based on GaAs cantilever beams, Nexus Academic Newslett. (1997) 13.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in GaAs power sensor microsystem technology and simulation. In: MICROSIM II: Simulation and Design of Microsystems and Microstructures. Eds. R.A.Adey and P.Renaud. Southamton: Comput. Mechan. Publ. 1997. ISBN-13: 978-1853125010. P. 43-51.

1996

Haščík, Š., Lalinský, T., Kuzmík, J., Porges, M., Mozolová, Ž., : Fabrication of thin GaAs cantilever beams for power sensor microsystem by RIE Vacuum 47 (1996) 1215-1217.

Lalinský, T., Kuzmík, J., Haščík, Š., Mozolová, Ž., Hatzopoulos, Z., : GaAs power sensor microsystem technology and characterization. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 301.

Lalinský, T., Osvald, J., Machajdík, D., Mozolová, Ž., Šišolák, J., Constantinidis, G., Kobzev, A., : High-temperature stable Ir-Al/n-GaAs Schottky diodes: Effect of the barrier height controlling J. Vacuum Sci Technol. 14 (1996) 657.

Lalinský, T., Šafránková, J., Mozolová, Ž., Harman, R., Németh, Š., Bujdák, M., : Characteristics of multiple d-doped GaAs structures. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 317.

Lalinský, T., Osvald, J., Breza, J., Vogrinčič, P., Mozolová, Ž., Šišolák, J., : Indium-based multilayer contact systems to n-GaAs. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 33.

Darmo, J., Dubecký, F., Lalinský, T., : Neutron irradiated undoped LEC SI GaAs: II. C-V and deep-level state analysis. In: Gallium Arsenide Related Comp. 1995. Ed. P.G.Pelfer. Singapore: World Sci 1996. P. 158-163.

Pogany, D., Lalinský, T., Seliger, N., Kuzmík, J., Habaš, P., Hrkút, P., Gornik, E., : Power sensor microsystems characterization using a contactless optical laser method. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 201.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in a GaAs power sensor microsystem technology and simulation. In: MICROSIM II. Ed. R.A.Adey. Southampton: Comput. Mechanics Publ. 1996. P. 43-51.

1995

Porges, M., Šafránková, J., Lalinský, T., Kostič, I., Rangelow, I., Tegude, F., : Asymmetric (Schottky — Ohmic) MSM photodetector Solid State Electr. 38 (1995) 425.

Dubecký, F., Darmo, J., Lalinský, T., Hlaváč, S., Benovič, M., Pikna, M., : Detection properties of the Schottky-barrier radiation detectors based on LEC semi-insulating GaAs. In: Proc. Inter. Workshop Solid State Phys. Radioact. Irrad. Eds. P.Šutta and J. Mudroň. Liptov. Mikuláš: Military Acad. 1995. P. 113.

Lalinský, T., Porges, M., Šafránková, J., Kuzmík, J., Boháček, P., Mozolová, Ž., Ďuríček, L., : GaAs submicron heterostructure devices. In: Miteko ’95. Pardubice 1995. P. 63.

Lalinský, T., Osvald, J., Mozolová, Ž., : Ir-Al bimetallic Schottky contact system on GaAs, Fizika A 4 (1995) 431-437.

Lalinský, T., Kuzmík, J., Porges, M., Haščík, Š., Mozolová, Ž., Grno, L., : Monolithic GaAs MESFET power sensor microsystem Electron. Lett. 31 (1995) 1914.

1994

Lalinský, T., Gregušová, D., Mozolová, Ž., Breza, J., : High temperature stable Ir-Al/n-GaAs Schottky diodes Applied Phys. Lett. 64 (1994) 1818.

Gregušová, D., Lalinský, T., Mozolová, Ž., Machajdík, D., Pochaba, I., Vávra, I., Porges, M., : Characterization of WN x metallization prepared by ion implantation of nitrogen Thin Solid Films 249 (1994) 250.

1993

Osvald, J., Lalinský, T., : Barrier height enhancement in WSix/GaAs Schottky diodes by rapid thermal anneali ng J. Mater. Sci 4 (1993) 267.

Kuzmík, J., Lalinský, T., Seidel, P., : Coimplantation of Mg and Si in GaAs MESFETs Solid State Electr. 36 (1993) 427.

Porges, M., Lalinský, T., Šafránková, J., Hudek, P., Kraus, J., Tegude, F., von Wendorff, W., Jäger, D., : GaAs MSM photodiode using the highly doped channel layer of a heterostructure MESFET Physica Status Solidi A 136 (1993) K65.

Dubecký, F., Betko, J., Darmo, J., Lalinský, T., : Charakterizácia GaAs detektorov žiarenia s vysokou radiačnou odolnosťou. In: ECOMON 93. Žilina: INPEKO 1993. S. 74.

Šafránková, J., Porges, M., Lalinský, T., Mozolová, Ž., Hudek, P., Kostič, I., Kraus, J., von Wendorff, W., Tegude, F., Jäger, D., : Photoelectrica l properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET Physica Status Solidi A 140 (1993) K111.

Gregušová, D., Lalinský, T., Mozolová, Ž., Breza, J., Vogrinčič, P., : The effect of oxygen in WN films on thermal stability of WN /GaAs interface J. Mater. Sci 4 (1993) 197.

Gregušová, D., Lalinský, T., Machajdík, D., Pochaba, I., Porges, M., : The characterization of WNo films prepared by ion implantation of nitrogen. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 93.

Osvald, J., Lalinský, T., : The influence of rapid thermal annealing on the WSix/GaAs Schottky barrier height. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 165.

1992

Porges, M., Lalinský, T., : Characterization of planar ohmic contacts – the effect of position of probes on contact area Solid State Electr. 35 (1992) 157-158.

Lalinský, T., Kuzmík, J., Gregušová, D., Mozolová, Ž., Breza, J., Feciško, M., Seidel, P., : Properties of WN x/GaAs Schottky contacts prepared by ion implantation of nitrogen J. Materials Sci 3 (1992) 157.

Papaioannou, G., Ioannou-Sougleridis, V., Lalinský, T., Kuzmík, J., Porges, M., Kourkoustas, C., : The PHOTOFET method in submicrometer GaAs MESFETs: substrate leakage current effect Semicond. Sci Technol. 7 (1992) 935.

1991

Dubecký, F., Lalinský, T., : The influence of RTA on deep states in Si-implanted GaAs MESFET structures investigated by DLTS and ODLTS Solid State Phenomena 19 (1991) 221.

1990

Porges, M., Lalinský, T., Mozolová, Ž., Kuzmík, J., : A three layer model of p lanar alloyed ohmic contacts to n-GaAs Solid-State Electr. 33 (1990) 1531.

Kuzmík, J., Lalinský, T., : Correlation between the Backgating effect and the gate lenght shortening on GaAs MESFETs Physica Status Solidi A 119 (1990) K185.

Kuzmík, J., Lalinský, T., Mozolová, Ž., Porges, M., : DC performance of short ion-implanted GaAsMESFETs, the role of gate length shortening Solid-State Electr. 33 (1990) 1223.

Bartoš, J., Pinčík, E., Thurzo, I., Matatko, B., Lalinský, T., : Characterization of MAOS structures on GaAs Physica Status Solidi A 122(1990) 715-722.

1989

Šafránková, J., Lalinský, T., Kuzmík, J., Mozolová, Ž., Porges, M., Gregušová, D., : Preparation and properties of GaAs double-Schottky-interdigitated photodetectors, Crystal Propert. Preparation 19-20 (1989) 315.

Lalinský, T., Kuzmík, J., Porges, M., Mozolová, Ž., Gregušová, D., : Technology and characterization of a submicrometer GaAs length GaAs MESFETs, Crystal Propert. Preparation 19-20 (1989) 259.

Huran, J., Szulényi, F., Lalinský, T., Liday, J., Fapšo, L., : The silicon nitride layers prepared by PE CVD for GaAs IC technology. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 161.

1987

Lalinský, T., Gregušová, D., Moštenický, I., Měřínsky, K., : Technology and electrical characterization of GaAs MESFET structures. In: Gallium Arsenide. Proc. 2nd Conf. Phys. Technol. GaAs and other III-V Semicond. Ed. E.Lendway. Aedermannsdorf: Trans. Techn. Publ. 1987. P. 297.

Lalinský, T., Mozolová, Ž., Haščík, Š., Guldan, A., Porges, M., Kuzmík, J., : Využitie plazmového leptania v technológii GaAs MESFET štruktúr. In: 6. čs. konf. o tenkých vrstvách 1987. Ed. Z.Hájek. Praha: JČSMF 1987. S. 92.

1986

Lalinský, T., Chromik, Š., Porges, M., Gregušová, D., Kuzmík, J., Breza, J., : Problémy technológie, elektrickej charakterizácie a spoľahlivosti ohmických kontaktov na GaAs, Elektrotechn. časopis 37 (1986) 354.

1985

Lalinský, T., Kordoš, P., Kovács, B., Mojzes, I., Racz, A., Szentpali, B., : Optimization of heat treatment for forming AuGe based contacts to n-GaAs Phys. Status Solidi 88 (1985) K87.

1983

Lalinský, T., Měřínsky, K., : Elektrická charakterizácia GaAs štruktúr so Schottkyho bariérou analýzou V-A charakteristík, Elektrotechn. časopis 34 (1983) 161.

Thurzo, I., Gmucová, K., Červenák, J., Lalinský, T., : GaAs-anodic oxide interface examination by deep-level transient current spectroscopy Phys. Status Solidi A 77 (1983) 323.

Lalinský, T., Breza, J., : Technológia prípravy dielektrických pasivačných vrstiev na GaAs metódou anodickej oxidácie Al-GaAs štruktúr, Elektrotechn. časopis 34 (1983) 108.

1982

Thurzo, I., Kresáková, K., Červenák, J., Lalinský, T., : Niektoré problémy interpretácie DLTS MOS štruktúr pripravených oxidáciou GaAs. In: Zborník 5. čs. konf. GaAs a príbuzné polovodičové zlúčeniny. Bratislava: EÚ CEFV SAV 1982. S. 51.

Thurzo, I., Lalinský, T., : On the relationship between charge and current based DLTS Phys. Status Solidi A 71 (1982) K83.

strong>Lalinský, T., Měřínsky, K., : Vyšetrovanie tepelnej stability Schottkyho rozhrania Al-GaAs analýzou V-A charakteristík v exponenciálnej a lineárnej oblasti. In: Zborník 5. čs. konf. GaAs a príbuzné polovodičové zlúčeniny. Bratislava: EÚ CEFV SAV 1982. S. 35.

Ing. Tibor LALINSKÝ, DrSc.