Ing. Milan ŤAPAJNA, PhD.

  • 2024

Gucmann, F., Meng, B., Chvála, A., Kúdela, R., Yuan, C., Ťapajna, M., Florovič, M., Egyenes, F., Eliáš, P., Hrubišák, F., Kováč, J.Jr., Fedor, J., and Gregušová, D.: Improved thermal performance of InGaAs/GaAs nanomembrane HEMTs transferred onto various substrates by epitaxial lift-off, ACS Applied Electron. Mater. 6 (2024) 5651–5660.

Xiao, X., Mao, Y., Meng, B., Ma, G., Hušeková, K., Egyenes, F., Rosová, A., Dobročka, E., Eliáš, P., Ťapajna, M., Gucmann, F., and Yuan, C.: Phase-dependent phonon heat transport in nanoscale gallium oxide thin films, Small 20 (2024) 2309961.

Gucmann, F., Ťapajna, M., Hušeková, K., Dobročka, E., Rosová, A., Nádaždy, P., Eliáš, P., Egyenes, F., Hrubišák, F., Chouhan, H., Keshtkar, J., Zheng, X., Pomeroy, J.W., Kuball, M., Xiao, X., Mao, Y., Meng, B., Ma, G., and Yuan, C.: Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD, Proc. SPIE 12887 (2024) 1288705.

Gucmann, F., Hušeková, K., Rosová, A., Dobročka, E., Egyenes, F., Hrubišák, F., Keshtkar, J., Chouhan, H., Krettová, M., Eliáš, P., Nádaždy, P., Gregušová, D., Pohorelec, O., Kozak, A., and Ťapajna, M.: Gallium oxide for applications in electronics and optoelectronics. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 13-16. ISBN 978-80-554-2109-4.

Gucmann, F., Hušeková, K., Yuan, C., Xiao, X., Mao, Y., Meng, B., Ma, G., Rosová, A., Dobročka, E., Egyenes, F., Eliáš, P., and Ťapajna, M.: Phase-dependent phonon heat transport in thin-film gallium oxide. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 121-124. ISBN 978-80-554-2109-4.

Chouhan, H., Hušeková, K., Dobročka, E., Ťapajna, M., Keshtkar, J., Pohorelec, O., Hrubišák, F., Mikolášek, M., and Gucmann, F.: Effect of off-cut sapphire substrate on the structural and optical properties of (-201) ß-Ga2O3 grown by liquid-injection MOCVD. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 117-120-28. ISBN 978-80-554-2109-4.

Chouhan, H., Egyenes, F., Rosová, A., Hušeková, K., Dobročka, E., Nádaždy, P., Ťapajna, M., Xiao, X., Mao, Y., Meng, B., Ma, G., Yuan, C., and Gucmann, Filip.: Heteroepitaxial growth of (010) β-Ga2O3ON sapphire substrates using α-Ga2O3 template by liquid-injection MOCVD. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 73-76. ISBN 978-80-554-2109-4.

  • 2023

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

Šichman, P., Stoklas, R., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., Hashizume, T., Chvála, A., Šatka, A., and Kuzmík, J.: Vertical GaN transistor with semi-insulating channel, Physica Status Solidi (a) 220 (2023) SI2200776.

Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.

Gucmann, F., Nádaždy, P., Hušeková, K., Dobročka, E., Priesol, J., Egyenes, F., Šatka, A., Rosová, A., and Ťapajna, M.: Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD, Mater. Sci Semicond. Process. 156 (2023) 107289.

Egyenes, F., Gucmann, F., Rosová, A., Dobročka, E., Hušeková, K., Hrubišák, F., Keshtkar, J., and Ťapajna, M.: Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions, J. Phys. D: Appl Phys. 56 (2023) 045102.

Bystrický, , Škrátek, M., Rusnák, J., Precner, M., Ťapajna, M., Hnatko, M., and Šajgalík, P.: Electrical and magnetic properties of silicon carbide composites with titanium and niobium carbide as sintering aids, Ceram. Inter. 49 (2023) 5319-5326.

Ťapajna, M., Keshtkar, J., Szabó, O., Shagieva, E., Hušeková, K., Dobročka, E., Fedor, J., Dérer, J., Kromka, A., and Gucmann, F.: Growth of nanocrystalline diamond on gallium oxide using various interlayers. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 28-31.

Chvála, A., Kováč, J., Gregušová, D., Ťapajna, M., Gucmann, F., Marek, J., and Florovič, M.: 3D thermal simulation of GaAs-based HEMT on foreign substrates. In: 5th Inter. Conf. Microelectr. Devices Technol. MicDAT 2023. IFSA Publ. 2023.  ISBN 978-84-09-53748-8, pp. 20-23.

Yuan, C., Mao, Y., Meng, B., Xiao, X., Hrubišák, F., Egyenes, F., Dobročka, E., Hušeková, K., Rosová, A., Eliáš, P., Keshtkar, J., Ťapajna, M., and Gucmann, F.: Thermal properties of Ga2O3 films and interfaces grown by MOCVD. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 36-39.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Material properties of MOCVD-grown β- and κ-Ga2O3 thin films on 4H-SiC substrates. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 87-90.

Ťapajna, M., Egyenes, F., Hrubišák, F., Hušeková, K., Dobročka, E., Nádaždy, P., Rosová, A., Chouhan, H., Keshtkar, J., and Gucmann., F.: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties. In: IMFEDK 2023: Inter. Meeting for Future of Electron Devices, Kansai. – IEEE, 2023, p. IN10. ISBN 979-8-3503-9378-1. (APVV 20-0220, 21-0231, VEGA 2/0100/21)

  • 2022

Kozak, A., Hofbauerová, M., Halahovets, Y., Pribusová-Slušná, L., Precner, M., Mičušík, M., Orovčík, L., Hulman, M., Stepura, A., Omastová, M., Šiffalovič, P., and Ťapajna, M.: Nanofriction properties of mono- and double-layer Ti3C2Tx MXenes, ACS Appl. Mater. Interfaces 14 (2022) 36815–36824.

Ivashchenko, V.I., Onoprienko, A.A., Scrynskyy, P.L., Kozaka, A.O., Shevchenko, V.I., Ťapajna, M., Orovčík, L., Lytvyn, P.M., and Medykh, N.R.: Structural, mechanical, optoelectronic and thermodynamic properties of bulk and film materials in Ti–Nb–C system: First-principles and experimental investigations, Physica B 646 (2022) 414311. (Not IEE SAS)

Kozak, A., Sojková, M., Gucmann, F., Bodík, M., Vegso, K., Dobročka, E., Píš, I., Bondino, F., Hulman, M., Šiffalovič, P., and Ťapajna, M.: Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe2, Applied Surface Sci 605 (2022) 154883.

Hrubišák, F., Hušeková, K., Egyenes, F., Gucmann, F., Dobročka, E., Keshtkar, J., and Ťapajna, M.: Effects of repeated annealing in different atmospheres on surface morphology of ε-/κ-Ga2O3 grown on c-plane sapphire using LI-MOCVD method. In: ELITECH´22: 24th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Keshtkar, J., Gucmann, F., Hotový, I., Dobročka, E., Egyenes, F., and Ťapajna, M.: NiO thin films for solar-blind photodetectors:structure and electrical properties. In: ELITECH´22: 24th Conf. Doctoral Students Ed. A. Kozáková. Bratislava: Spektrum STU, 2022. ISBN 978-80-227-5192-6.

Hrubišák, F., Hušeková, K., Egyenes, F., Rosová, A., Kubranská, A., Dobročka, E., Nádaždy, P., Keshtar, J., Gucmann, F., and Ťapajna, M.: Structural and electrical properties of Ga2O3 transistors grown on 4H-SiC substrates. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 115-118.

Egyenes, F., Gucmann, F., Dobročka, E., Mikolášek, M., Hušeková, K., and Ťapajna, M.: Transport properties of Si-doped ẞ-Ga2O3 grown by liquid-injection MOCVD. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 119-122.

Stoklas, R., Šichman, P., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., and Kuzmík, J.:  Interface states analysis of Al2O3/GaN MOS capacitors with semi-insulating C-doped GaN. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 15-16.

Hrubišák, F., Egyenes, F., Dobročka, E., Gucmann, F., Hušeková, K., Keshtkar, J., and Ťapajna, M.: Growth and properties of Ga2O3 on 4H-SiC using liquid-injection MOCVD. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 47-50.

Keshtkar, J., Hotovy, I., Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes, F., Mikolášek, M., and Ťapajna, M.: NiO thin films for solar-blind photodetectors: structure and electrical properties. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 113-116.

  • 2021

Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

Bodík, M., Sojková, M., Hulman, M., Ťapajna, M., Truchlý, M., Vegso, K., Jergel, M., Majková, E., Španková, M., and Šiffalovič, P.: Friction control by engineering the crystallographic orientation of the lubricating few-layer MoS2 films, Applied Surface Sci 540 (2021) 148328.

Kozak,A., Precner, M., Hutár, P., Bodík, M., Vegso, K., Halahovets, Y., Hulman, M., Siffalovic, P., and Ťapajna, M.: Angular dependence of nanofriction of mono- and few-layer MoSe2, Applied Surface Sci 567 (2021) 150807.

Gregušová, D., Pohorelec, O., Ťapajna, M., Blaho, M., Gucmann, F., Stoklas, R., Hasenöhrl, S., Laurenčíková, A., Šichman, P., Haščík, Š., and Kuzmík, J.: Polarization engineering in GaN-based normally-off transistors. In: 2021 Inter. Meeting for Future of Electron Devices – IMFEDK2021. Kansai, Virtual 2021. Invited. IEEE: 2021, p. 1-4. ISBN 978-1-6654-4200-8.

Egyenes-Pörsök, F., Hušeková, K., Dobročka, E., Gucmann, F., and Ťapajna, M.: Optimization of Ohmic contact formation for αlpha-Ga2O3 epitaxial layers grown by MOCVD. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 91-94.

Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes-Pörsök, F., and Ťapajna, M.: Growth and properties of ε-Ga2O3 on sapphire substrates. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 63-66.

Onoprienko, A.A., Ivashchenko, V.I., Scrynskyy, P.L., Kovalchenko, A.M., Kozaka, A.O., Sinelnichenko, A.K., OlifanaI., Ťapajna, M., and Orovčík, L.: Structural and mechanical properties of Ti-B-C coatings prepared by dual magnetron sputtering, Thin Solid Films 730 (2021) 138723. (Not IEE SAS)

  • 2020

Ťapajna, M. and Koller, C.: Reliability issues in GaN electronic devices. In: Nitride semiconductor technology: power electronics and optoelectronic devices. Eds. F. Roccaforte and M. Leszczynski. Weinheim: Wiley-VCH 2020. ISBN: 978-3-527-34710-0, pp. 199-253.

Ťapajna, M.: Current understanding of bias-temperature instabilities in GaN MIS transistors for power switching applications, Crystals 10 (2020) 1153.

Egyenes-Pörsök, E., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.: Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

  • 2019

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

Ťapajna, M., Egyenes-Pörsök, F., Hasenöhrl, S., Blaho, M., Pohorelec, O., Vincze, A., Muška, M., Noga, P., and Gregušová, D.: Investigation of GaN P-N junction processed by Mg ion implantation. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 43-46.

Pohorelec, O., Ťapajna, M., Gregušová, D., Fröhlich, K., and Kuzmík, J.: Investigation of threshold voltage instabilities in MOS-gated InGaN/AlGaN/GaN HEMTs. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 123-126.

  • 2018

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dinesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O.,  and Škvarek, O.: Performance of HfOx– and TaOx-based resistive switching structures in circuits for min and max functions implementation, MRS Adv. 3 (2018) Iss. 59, 3427-3432.

Mikolášek, M., Fröhlich, K., Hušeková, K., Racko, J., Rehacek, V., Chymo, F., Ťapajna, M., and Harmatha, L.: Silicon based MIS photoanode for water oxidation: a comparison of RuO2 and Ni Schottky contacts, Applied Surface Sci 461 (2018) 48-53.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O., and Škvarek, O.: Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions, J. Applied Phys. 124 (2018) 152109.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, , Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144.

  • 2017

Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J., : Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Applied Phys. Lett. 111 (2017) 033506.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103.

Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E., Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107.

Harmatha, L., Mikolášek, M., Racko, J., Fröhlich, K., Ťapajna, M., Benko, P., : Silicon based MOS structures with a Ti02 layer grown by atomic layer deposition for solar fuel generation In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 263-266.

  • 2016

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211.

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress. IEEE Electron Device Lett. 37 (2016) 385 – 388.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180.

Mikolášek, M., Racko, J., Řeháček, V., Harmatha, L., Ťapajna, M., Fröhlich, K., : Silicon based metal-insulator-semiconductor structures for photoelectrochemical solar fuel generation In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 45-48.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., Kuzmík, J., : Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

  • 2015

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors. Applied Phys. Lett. 107 (2015) 193506

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090.

Gregušová, D., Kúdela, R., Gucmann, F., Stoklas, R., Blaho, M., Ťapajna, M., Kordoš, P., Fröhlich, K., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 58.. (VEGA 2/0105/13).

Molnár, M., Donoval, D., Chvála, A., Marek, J., Príbytný, P., Ťapajna, M., Hilt, O., Brunner, F., Würfl, H., Kuzmík, J., : Thermal management in high-power GaN HEMTs: investigation of selected thermal issues by 3-D simulation approach In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 136-139.

  • 2014

Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmík, J., : Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506.

Kuzmík, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, E., Meneghesso, G., Würfl, H., :Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown. J. Applied Phys. 115 (2014) 164504.

Ťapajna, M., Killat, N., Palankovski, V., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Kuball, M., Kuzmík, J., : Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors,. IEEE Trans. Electron Dev. 61 (2014) 2793-2801.

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Hashizume, T., Kuzmík, J., : Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations. J. Applied Phys. 116 (2014) 104501.

Ťapajna, M., Válik, L., Kotara, P., Zhytnytska, R., Brunner, F., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 121-124.

Kuzmík, J., Ťapajna, M., Válik, L., Molnár, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., Würfl, H., : Self-heating in GaN transistors designed for high-power operation,. IEEE Trans. Electron Dev. 61 (2014) 3429-3434.

  • 2013

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Kuzmík, J., : Bulk and interface trapping in the gate dielectric of GaN based metal–oxide–semiconductor high-electron mobility transistors. Applied Phys. Lett. 102 (2013) 243509.

Ťapajna, M., Kuzmík, J., : Control of threshold voltage in GaN based metal–oxide–semiconductor high-electron mobility transistors towards the normally-off operation. Japan. J. Applied Phys. 52 (2013) 08JN08.

  • 2012

Ťapajna, M., Kuzmík, J., : A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors. Applied Phys. Lett. 100 (2012) 113509.

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.

Ťapajna, M., Gregušová, D., Čičo, K., Fedor, J., Carlin, J., Grandjean, N., Killat, N., Kuball, M., Kuzmík, J., : Early stage degradation of InAlN/GaN HEMTs during electrical stress. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 7-10.

Moereke, J., Ťapajna, M., Uren, M., Pei, Y., Mishra, U., Kuball, M., : Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability. Phys. Status Solidi A 209 (2012) 2646-2652.

Ťapajna, M., Killat, N., Moereke, J., Paskova, T., Evans, K., Leach, J., Li, X., Ozgur, U., Morkoc, H., Chabak, K., Crespo, A., Gillespie, J., Fitch, R., Kossler, M., Walker, D., Trejo, M., Via, G., Blevins, J., Kuball, M., : Non-arrhenius degradation of AlGaN/GaN HEMTs grown on bulk GaN substrates. IEEE Electron Device Lett. 33 (2012) 1126-1128.

Ťapajna, M., Jimenez, J., Kuball, M., : On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics. Phys. Status Solidi A 209 (2012) 386-389.

Ťapajna, M., Killat, N., Chowdhury, U., Jimenez, J., Kuball, M., : The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. Microelectr. Reliab. 52 (2012) 29-32.(not IEE SAS).

Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A., : TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.

  • 2011

Kuball, M., Ťapajna, M., Simms, R., Faqir, M., Mishra, U., : AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectr. Reliab. 51 (2011) 195.(not IEE SAS).

Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. J. Vacuum Sci Technol. B 29 (2011) 01A808.

Killat, N., Ťapajna, M., Faqir, M., Palacios, T., Kuball, M., : Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier. Electronics Lett. 47 (2011) 405-U75. (not IEE SAS).

Ťapajna, M., Kaun, S., Wong, M., Gao, F., Palacios, T., Mishra, U., Speck, J., Kuball, M., : Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors. Applied Phys. Lett. 99 (2011) 223501.(not IEE SAS).

Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., Fröhlich, K., : Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks. Applied Surface Sci 257 (2011) 7876-7880

  • 2010

Gong, Y., Ťapajna, M., Bakalova, S., Zhang, Y., Edgar, J., Dudley, M., Hopkins, M., Kuball, M., :Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device. Applied Phys. Lett. 96 (2010) 223506.(not IEE SAS).

Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., Fröhlich, K., : Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Semicond. Sci Technol. 25 (2010) 075007.

Ťapajna, M., Simms, R., Faqir, M., Kuball, M., Pei, Y., Mishra, U., : Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis. In: Inter. Reliability Phys. Symp. (2010) P. 152- 155. (Not IEE SAS).

Ťapajna, M., Mishra, U., Kuball, M., : Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress. Applied Phys. Lett. 97 (2010) 023503. (not IEE SAS).

Ťapajna, M., Simms, R., Pei, Y., Mishra, U., Kuball, M., : Integrated optical and electrical analysis: identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress. IEEE Electron Device Lett. 31 (2010) 662. (not IEE SAS).

Ťapajna, M., Simms, R., Pei, Y., Mishra, U., Kuball, M., : On the identification of trap location in AlGaN/GaN HEMTs during electrical stress. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 119-122. (Not IEE SAS).

  • 2009

Fröhlich, K., Aarik, J., Ťapajna, M., Rosová, A., Aidla, A., Dobročka, E., Hušeková, K., : Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes. J. Vacuum Sci Technol. B 27 (2009) 266-270.

Ťapajna, M., Kuzmík, J., Čičo, K., Pogany, D., Pozzovivo, G., Strasser, G., Abermann, S., Bertagnolli, E., Carlin, J., Grandjean, N., Fröhlich, K., : Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures. Japan. J. Applied Phys. 48 (2009) 090201.

Harmatha, L., Ballo, P., Ťapajna, M., Csabay, O., Nemec, M., : The effect of high temperature annealing on the properties of MOS structures on nitrogen doped silicon. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 156-159.

Fröhlich, K., Vincze, A., Dobročka, E., Hušeková, K., Čičo, K., Uherek, F., Lupták, R., Ťapajna, M., Machajdík, D., : Thermal stability of GdScO3 dielectric films grown on Si and InAlN/GaN substrates, Mater. Res. Soc. Symp. Proc. 1155 (2009) C09-03.

Ťapajna, M., Čičo, K., Kuzmík, J., Pogany, D., Pozzovivo, G., Strasser, G., Carlin, J., Grandjean, N., Fröhlich, K., : Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures. Semicond. Sci Technol. 24 (2009) 035008.

  • 2008

Paskaleva, A., Ťapajna, M., Atanassova, E., Fröhlich, K., Vincze, A., Dobročka, E., : Effect of Ti doping on Ta2O5 stacks with Ru and Al gates. Applied Surface Sci 254 (2008) 5879-5885.

Ťapajna, M., Dobročka, E., Paskaleva, A., Hušeková, K., Atanassova, E., Fröhlich, K., : Electrical characterization of Ru- and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 267-270.

Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., Aidla, A., : Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochem. Solid-State Lett. 11 (2008) G19-G21.

Hudec, B., Ťapajna, M., Hušeková, K., Aarik, J., Aidla, A., Fröhlich, K., : Low equivalent oxide thickness metal/insulator/metal structures for DRAM applications. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 123-126.

Benko, P., Ťapajna, M., Paskaleva, A., Atanassova, E., Fröhlich, K., : Measurement of electrical properties on MOS structure with Ta2O5 gate dielectric layer and Ru-based gate electrodes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 28-31.

Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.

  • 2007

Ťapajna, M., Rosová, A., Hušeková, K., Roozeboom, F., Dobročka, E., Fröhlich, K., : Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode. Microelectr. Engn. 84 (2007) 2366-2369.

Pozzovivo, G., Kuzmík, J., Golka, K., Schrenk, W., Strasser, G., Pogany, D., Čičo, K., Ťapajna, M., Fröhlich, K., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., : Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Phys. Lett. 91 (2007) 043509.

Písečný, P., Harmatha, L., Jakabovič, J., Ťapajna, M., Lupták, R., Čičo, K., : The properties of oxygen plasma annealed La2O3 films for CMOS technology. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 243-246.

Machajdík, D., Kobzev, A., Hušeková, K., Ťapajna, M., Fröhlich, K., Schram, T., : Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology. Vacuum 81 (2007) 1379-1384.

  • 2006

Harmatha, L., Ťapajna, M., Slugeň, V., Ballo, P., Písečný, P., Šik, J., Kögel, G., : Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. Microelectr. J. 37 (2006) 283-289.

Ťapajna, M., Hušeková, K., Machajdík, D., Kobzev, A., Schram, T., Lupták, R., Harmatha, L., Fröhlich, K., :Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology. Microelectr. Engn. 83 (2006) 2412.

Fröhlich, K., Espinos, J., Ťapajna, M., Hušeková, K., Lupták, R., : Energy band diagram of the Ru/Hf0.75Si0.25Oy/Si gate stack. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 29-32.

Fröhlich, K., Lupták, R., Ťapajna, M., Hušeková, K., Weber, U., Baumann, P., Lindner, J., : Fixed oxide charge in Ru-based chemical vapour deposited high-κ gate stacks In: Defects in high-κ gate dielectric stacks. Ed. E.P. Gusev. Springer 2006. P. 277-286.

Manke, C., Boissiere, O., Weber, U., Barbar, G., Baumann, P., Lindner, J., Ťapajna, M., Fröhlich, K., :Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures. Microelectr. Engn. 83 (2006) 2277.

Ťapajna, M., Hušeková, K., Fröhlich, K., Dobročka, E., Roozeboom, F., : Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 21-24.

Ťapajna, M., Harmatha, L., Hušeková, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor. Solid-State Electr. 50 (2006) 177-180.

Franta, M., Rosová, A., Ťapajna, M., Dobročka, E., Fröhlich, K., : Microstructure of HfO2 and HfxSi1-xOy dielectric films prepared on Si for advanced CMOS application. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 47-50.

Ťapajna, M., Hušeková, K., Espinos, J., Harmatha, L., Fröhlich, K., : Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric. Materials Sci Semicond Process. 9 (2006) 969-974.

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., Espinos, J., : Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition. J. Electrochem. Soc. 153 (2006) F176-F179.

Stuchlíková, Ľ., Harmatha, L., Ťapajna, M., Ballo, P., Písečný, P., Benkovič, M., Jakabovič, J., : The effect of rapid thermal annealing on oxygen precipitation in nitrogen doped silicon substrate. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 43-46.

Harmatha, L., Ballo, P., Breza, J., Písečný, P., and Ťapajna, M.: Properties of Si-SiO2 Interfaces in MOS structures with nitrogen-doped silicon, Adv. Electrical Electron. Engn. 5 (2006) 334-336.

  • 2005

Ťapajna, M., Harmatha, L., Fröhlich, K., Hušeková, K., De Gendt, S., Schram, T., : Electrical characterisation of Ru/Hf-based high-k dielectric gate stacks for advanced CMOS technology. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 98-101.

Lupták, R., Fröhlich, K., Rosová, A., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Growth of gadolinium oxide films for advanced MOS structure. Microelectr. Engn. 80 (2005) 154-157.

Ťapajna, M., Harmatha, L., Hušeková, K., Fröhlich, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor, Measurement Sci Rev. 5 (2005) 42.

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., : Properties of Ru/HfxSi1-xOy/SI MOS gate stack structures grown by MOCVD. In: Proc. 207th Electrochemical Soc Meeting. Eds. E.P.Gusev et al. Pennington: The Electrochem. Soc, 2005. P. 339.

Lupták, R., Fröhlich, K., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Structure and electrical properties of the thin Gd2O3 films. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 200-203.

  • 2004

Ťapajna, M., Písečný, P., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., Jergel, M., : Application of Ru-based gate materials for CMOS technology. Materials Sci Semicond. Process. 7 (2004) 271-276.

Ťapajna, M., Harmatha, L., : Determining the generation lifetime in a MOS capacitor using linear sweep techniques, Solid-State Electr. 48 (2004) 2339-2342. (Not IEE SAS).

Ťapajna, M., Pjenčák, J., Vrbický, A., Harmatha, L., Kúdela, P., : Determining the generation lifetime in a MOS capacitor using linear sweep techniques, J. Electr. Engn. 55 (2004) 239-244. (Not IEE SAS).

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., : Growth and properties of ruthenium based metal gates for pMOS devices. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 163-166.

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., Roozeboom, F., Kobzev, A., Wiemer, C., Ferrari, C., Fanciulli, M., Rossel, C., Cabral, C., : Preparation of SrRuO3 films for advanced CMOS metal gates. Materials Sci Semicond. Process. 7 (2004) 265-269.

Ťapajna, M., Písečný, P., Harmatha, L., Fröhlich, K., Hušeková, K., Lupták, R., Hooker, J., Jakabovič, J., : Ruthenium-based gate materials for advanced MOS technology. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 270-273.

Ťapajna, M., Čičo, K., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., : Thermal stability of ruthenium MOS gate electrodes. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 167-170.

Písečný, P., Ťapajna, M., Harmatha, L., and Vrbicky, A.: Determination of interface trap density in unipolar structures using quasistatic C–V method, J. Electr.  Engn. 55 (2004) 95–99. (Not IEE SAS)