Elektrotechnický ústav SAV, v.v.i.

2012

Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., and Vincze, A.: AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation, Applied Phys. Lett. 100 (2012) 092105.

Vanko, G., Vallo, M., Bruncko, J., and Lalinský, T.: Laser ablated ZnO layers for AlGaN/GaN HEMT passivation, Vacuum 86 (2012) 672-674.

Vincze, A., Držík, M., Michalka, M., Bruncko, J., Vallo, M., Vanko, G., and Lalinský, T.: SIMS depth profiling of metallization contact layers for AlGaN/GaN heterostructures. In: Proc. 18^th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2012). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 231-234.

2011

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., and Benčurová, A.: AlGaN/GaN C-HEMT structures for dynamic stress detection, Sensors Actuators A 172 (2011) 98-102.

Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., and Husák, M.: Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor, Sensors Actuators A 172 (2011) 386-391.

Lalinský, T., Držík, M., Vanko, G., Vallo, M., Bruncko, J., Haščík, Š., Jakovenko, J., and Husák, M.: Piezoelectric response of AlGaN/GaN based circular-HEMT structures, Microelectr. Engn. 88 (2011) 2424-2426.

Rýger, I., Vanko, G., Lalinský, T., Vallo, M., Tomáška, M., and Ritomský, A.: AlGaN/GaN based SAW-HEMT devices for chemical gas sensors operating in GHz range, Procedia Engn. 25 (2011) 1101-1104.

2010

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., and Kostič, I.: AlGaN/GaN C-HEMT structures for dynamic stress detection, Procedia Engn. 5(2010) 1405-1408.

Lalinský, T., Rýger, I., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., and Vallo, M.: AlGaN/GaN based SAW-HEMT structures for chemical gas sensors, Procedia Engn. 5(2010) 152-155.

Rýger, I., Lalinský, T., Vanko, G., Tomaska, M., Kostic, I., Haščík, Š., and Vallo, M.: HEMT-SAW structures for chemical gas sensors in harsh environment. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 131-134.

Vallo, M., Lalinský, T., Vanko, G., Držík, M., Haščík, Š., Rýger, I., and Kostič, I.: AlGaN/GaN C-HEMT for piezoelectric MEMS stress sensor appliocations. In.: 21^stMicromech. Micro Systems Europe Workshop – MME 2010. Enschede 2010. P. 56-59.

Ing. Martin VALLO, PhD.