Ing. Ladislav HRUBČÍN, CSc.

  • 2024

Zaťko, B., Šagátová, A., Hrubčín, L., Kováčová, E., Novák, A., Kurucová, N., Polansky, Š., and Jakůbek, J.: Imaging and spectrometric performance of SiC Timepix3 radiation camera, J. Instrument. 19 (2024) C01003.

Šagátová, A., Hrubčín, L., Kurucová, N., Nečas, V., Kováčová, E., Evseev, S.A., and Zaťko, B.: Electrical properties study of the 4H-SiC detectors based on thick epitaxial layer, AIP Conf. Proc. 3054 (2024) 050011.

Hrubčín, L., Zaťko, B., and Kováčová, E.: Silicon radiation detectors with rectifier junction prepared by different technological procedures, AIP Conf. Proc. 3251 (2024) 080005.

  • 2023

Evseev, S.A., Chernyshev, B.A., Gurov, Y.B., Dovbnenko, M.S., Zamiatin, N.I., Kopylov, Y.A., Rozov, S.V., Sandukovsky, V.G., Hrubčín, L., and Zaťko, B.: Radiation damage of SiC detectors irradiated with Xe ions and neutrons, Phys. Atomic Nuclei 86 (2023) 841–844.

Gál, N., Hrubčín, L., Šagátová, A., Vanko, G., Kováčová, E., and Zaťko, B.:  High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C, Applied Surface Sci 635 (2023) 157708.

Zaťko, B., Hrubčín, L., Boháček, P., Gurov, Y.B., Rozov, S.V., Evseev, S.A., Bulavin, M.V., Zamiatin, N.I., Kopylov, Y.A., Sekáčová, M., and Kováčová, E.: Spectrometric performance of 4H-SiC detectors after neutron irradiation, AIP Conf. Proc. 2778 (2023) 060012.

  • 2022

Gurov, J.B., Evseev, S.A., Zamyatin, N.I., Kopylov, Y.,A., Rozov, S.V., Sandukovsky, V.G., Streletskaia, E.A., Hrubčín, L., Zaťko, B., and Boháček, P.: Radiation Resistance of SiC Detectors after Neutron Irradiation, Phys. Particl. Nuclei Lett.19 (2022) 740-743.

Osvald, J., Hrubčín, L., and Zaťko, B.: Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes, Mater. Sci Semicond. Process. 140 (2022) 106413.

Zaťko, B., Šagátová, A., Osvald, J., Gál, N., Hrubčín, L., and Kováčová, E., Gurov, Y. B.: High-quality detectors based on 4H-SiC operated at different temperatures. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 203-206.

  • 2021

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: The study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Ivanov, O.M., Sekáčová, M., Kováčová, E., Gurov, Y.B., and Skuratov, V.A.: Study of the pulse height defect of 4H-SiC Schottky barrier detectors in heavy ion detection, AIP Conf. Proc. 2411 (2021) 070007.

  • 2020

Osvald, J., Hrubčín, L., and Zaťko, B.: Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors, Applied Surface Sci 533 (2020) 147389.

Zaťko, B., Šagátová, A., Hrubčín, L., Boháček, P., Kováčová, E., and Gurov, Y. B.: The Schottky barrier detectors based on 4H-SiC epitaxial layer. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 143-146.

  • 2019

Hrubčín, L., Gurov, J.B., Zaťko, B., Boháček, P., Rozov, S.V., Rozov, I.E., Sandukovskij, V.G., a Skuratov, V.A.: The amplitude defect of SiC detectors during the recording of accelerated Xe ions, Yadernaya Fizika i Inzhiniring 10 (2019) no. 3, Phys. Atomic Nuclei 82 (2019) 1682-1685.

Zaťko, B., Hrubčín, L., Boháček, P., Osvald, J., Šagátová, A., Sekáčová, M., Kováčová, E., and Nečas, V.: Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer, AIP Conf. Proc. 2131 (2019) 020054.

Huran, J., Hrubčín, L., Boháček, P., Skuratov, V.A., Kleinová, A., Sasinková, V., Kobzev, A.P., and Kováčová, E.: The effect of Xe ion irradiation on the properties of SiC(P) and SiC(B) film prepared by PECVD technology. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 155-160.

  • 2018

Hrubčín, L., Gurov, J.B., Zaťko, B., Mitrofanov, S.V. Rozov, S.V., Sedlačková, K., Sandukovskij, V.G. Semin, V.A., Nečas, V., and Skuratov, V.A.: Characteristics of Si and SiC detectors at registration of Xe ions, J. Instrument. 13 (2018) P11005.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

Hrubčín, L., Gurov, J.B., Zaťko, B., Ivanov, O.M., Mitrofanov, S.V., Rozov, S.V., Sandukovskij, V.G., Semin, V.A., and Skuratov, V.A.: A study of the radiation hardness of Si and SiC detectors using a Xe ion beam, Instrum. Experiment. Techn. 61 (2018) 769-771.

  • 2017

Zaťko, B., Hrubčín, L., Sedlačková, K., Boháček, P., Šagátová, A., Sekáčová, M., Arbet, J., Skuratov, V., Nečas, V., : High energy ion detection using 4H-SiC semiconductor detector In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 154-157.

Hrubčín, L., Gurov, J.B., Zaťko, B., Ivanov, O.M., Mitrofanov, S.V., Rozov, S.V., Sandukovskij, V.G., Semin, V.A., a Skuratov, V.A.: Issledovanije radiacionnoj stojkosti Si- i SiC-detektorov na pučke ionov Xe. Dubna: SÚJV 2017. Preprint P13-2017-81.

Perný, M., Šály, V., Packa, J., Mikolášek, M., Váry, M., Huran, J., Hrubčín, L., Skuratov, V., Arbet, J., :Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy. J. Phys.: Conf. Ser. 829 (2017) 012016.

Huran, J., Boháček, P., Hrubčín, L., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Kováčová, E., Arbet, J., : PECVD silicon carbide thin films for harsh environment applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 215-218.. (APVV 0443-12). (VEGA 1/0651/16). (ITMS 26220220170).

  • 2016

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Hrubčín, L., Arbet, J., Sekáčová, M., : Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 215-219.

Huran, J., Perný, M., Hrubčín, L., Skuratov, V., Šály, V., Mikolášek, M., Kobzev, A., Arbet, J., : Xe ion irradiation of heterojunction solar cell structures with ITO antireflection film In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 151-154.

  • 2015

Harmatha, L., Mikolášek, M., Stuchlíková, Ľ., Kosa, A., Žiška, M., Hrubčín, L., Skuratov, V., : Electrically active defects in solar cells based on amorphous silicon/crystalline silicon heterojunction after irradiation by heavy Xe ions. J. Electr. Engn. 66 (2015) 323-328.

Harmatha, L., Žiška, M., Stuchlíková, Ľ., Kosa, A., Mikolášek, M., Hrubčín, L., Skuratov, V., : Electrically active defects in the amorphous silicon/crystalline silicon heterojunction solar cell after heavy Xe ions irradiation In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 93-96.

Gurov, J., Rozov, S., Sandukovskij, V., Jakušev, E., Hrubčín, L., Zaťko, B., : Characteristics of silicon carbide detectors. Instrum. Experiment. Techn. 58 (2015) 22-24.

Huran, J., Hrubčín, L., Boháček, P., Borzakov, S., Skuratov, V., Kobzev, A., Kleinová, A., Sasinková, V., : The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. P. 399-403.

  • 2014

Harmatha, L., Mikolášek, M., Nemec, M., Janíček, F., Hrubčín, L., Skuratov, V., : Electrical properties of solar cells with a heterojunction of amorphous and crystalline silicon irradiated by heavy xenon ions J. Electr. Engn. 65 (2014) Suppl. 30-33.

Harmatha, L., Žiška, M., Jančovič, P., Fröhlich, K., Hrubčín, L., Mikolášek, M., Benko, P., Racko, J., Skuratov, V., : Electro-physical properties of mim structures after Xe heavy ion irradiation. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 44-47.

Hrubčín, L., Gurov, J., Zaťko, B., Rozov, S., Sandukovskij, V., Jakušev, E., : Charakteristiki detektorov na osnove karbida kremija Dubna: SÚJV 2014. Preprint P13-2014-23.

Harmatha, L., Mikolášek, M., Nemec, M., Hrubčín, L., Skuratov, V., : Radiation hardness of solar cells with a heterojunction of amorphous and crystalline silicon In: Renewable Energy Sources 2014: 5th Inter. Sci Conf. Eds. J. Cirák et al. Bratislava: FEI STU, 2014. ISBN 978-80-89402-74-8. P. 143-146.

Hrubčín, L., Huran, J., Gurov, J., Katulina, S., Rozov, S., Sandukovskij, V., : Silicon detectors for multilayered spectrometers of charged particles Bezpečnost jaderné energie 22 (2014) 87-92.

Huran, J., Balalykin, N., Feshchenko, A., Kobzev, A., Kleinová, A., Sasinková, V., Hrubčín, L., : Transmission photocathodes based on stainless steel mesh coated with deuterated diamond like carbon films. Nuclear Instr. Methods Phys. Res. A 753 (2014) 14-18.

  • 2013

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., Balalykin, N., : Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology. Phys. Status Solidi a 210 (2013) 2756-2761.

  • 1996

Dubecký, F., Betko, J., Morvic, M., Darmo, J., Bešše, I., Hrubčín, L., Benovič, M., Pelfer, P., Gombia, E., Mosca, R., : Neutron irradiated undoped LEC SI GaAs: I. Galvanomagnetic, I-V, PC and alpha detection study. In: Gallium Arsenide Related Comp. 1995. Ed. P.G.Pelfer. Singapore: World Sci 1996. P. 152-157.

Huran, J., Hrubčín, L., Kobzev, A., Liday, J., : Properties of amorphous silicon carbide films prepared by PECVDtechnology Vaccum 47 (1996) 1223.

  • 1995

Huran, J., Hotový, I., Hrubčín, L., : Evaluation of hydrogen content in PECVD silicon nitride prepared in multi-freequency plasma deposition system, Acta Phys. Univ. Comenianae 1 (1995) 73.

  • 1994

Hrubčín, L., Huran, J., Šándrik, R., Kobzev, A., Shirokov, D., : Application of the ERD method for hydrogen determination in silicon (oxy)nitride thin films prepared by ECR plasma deposition Nuclear Instrum. Methods in Phys. Research B 85 (1994) 60.

Hrubčín, L., Huran, J., Guldan, A., : Bariérové pásikové detektory ionizujúceho žiarenia vyrobené planárnou technológiou, Sensor 1 (1994) 14.

Dubecký, F., Darmo, J., Betko, J., Bešše, I., Hrubčín, L., Hlaváč, S., Benovič, M., : Detection properties of the first semi-insulating GaAs radiation detectors produced in Slovakia, Senzor 1 (1994) 5.

Dobrovodský, J., Bešše, I., Hrubčín, L., Kováč, P., : Shallow P+N junction silicon nuclear radiation detectors Sensors Actuators A 42 (1994) 558-561.

  • 1993

Thurzo, I., Hrubčín, L., Bartoš, J., Pinčík, E., : Current-voltage characteristics and charge dlts spectra of proton-bombarded schottky diodes on semiinsulating GaAs Nuclear Instrum. Methods in Phys. Research B 83 (1993) 145-152.

Huran, J., Szulényi, F., Hrubčín, L., Turanská, E., : ECR plasma deposition of SiNx and SiNxOx thin films. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 46.

Hrubčín, L., Horniaková, A., Huran, J., : Electrical characteristics of reactive ion etched GaAs Schottky structures. In: Proc. 16th Symp. Plasma Phys. Technol. Praha: CTU 1993. P. 292.

Huran, J., Szulényi, F., Hrubčín, L., : Physical properties of silicon (oxy) nitride thin films prepared by electron cyclotron resonance (ECR) plasma deposition. In: Proc. 16th Symp. Plasma Phys. Technol. Praha: CTU 1993. P. 283.

Adam, R., Štrbik, V., Beňačka, Š., Chromik, Š., Tomáš, P., Gaži, Š., Darula, M., Šmatko, V., Hrubčín, L., Hudek, P., Kostič, I., Pinčík, E., : YBa2Cu3Ox step edge junctions on buffered substrates. In: EUCAS 93. Ed. H.C.Freyhardt. Oberursel: DGM, 1993. P. 1147.

  • 1992

Hrubčín, L., Šafránková, J., Hudek, P., : Effect of proton bombardement on the dark current of GaAs MSM structures Physica Status Solidi A 133 (1992) K53.

Guldan, A., Hrubčín, L., Huran, J., : Experimental surface barrier microscopic detector, Elektrotechn. časopis 43 (1992) 126.

  • 1991

Hrubčín, L., Huran, J., Guldan, A., : Kremíkové bariérové detektory s povrchovou ochranou, Jaderná energie 37 (1991) 409.

  • 1989

Hrubčín, L., Huran, J., : Kremíkové bariérové pásikové detektory ionizujúceho žiarenia. In: Senzory a senzor. systémy. Košice: DT ČSVTS 1989. S. 19.

Hrubčín, L., Huran, J., Guldan, A., Vajcík, S., : Senzor síl vyrobený planárnou technológiou. In: Senzory a senzor. systémy. Košice: DT ČSVTS 1989. S. 280.

  • 1987

Huran, J., Guldan, A., Hrubčín, L., : Znižovanie rozptylových prúdov povrchových bariérových detektorov ionizujúceho žiarenia povrchovou pasiváciou. In: Senzory a senzorové systémy. Ed. J.Felix. Košice: Dom ČSVTS 1987. S. 58.

  • 1986

Hrubčín, L., Guldan, A., : Annular transmission surface-barrier detector Sensors Actuators 9 (1986) 271.

  • 1983

Guldan, A., Hrubčín, L., Kubek, J., : New method of nahing viaconnections in semiconductor wafers IEEE Trans. Electr. Devices 30 (1983) 1402.

  • 1975

Guldan, A., Luby, Š., Hrubčín, L., Vávra, I., : Molybdenum films in the MIS integrated circuit technology. In: Proc. XX. Inter. Wissenschaft. Koloqium. Ilmenau: TH 1975. Heft 5, p.45.