Ing. Karol ČIČO, PhD.

2012

Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., and Novák, J.: Aluminium oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition, Applied Phys. Lett. 100 (2012) 142113.

Čičo, K., Gregušová, D., Kuzmík, J., Jurkovič, M., Alexewicz, A., di Forte Poisson, M.-A., Pogany, D., Strasser, G., Delage, S., and Fröhlich, K.: Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al₂O₃ gate insulation and passivation, Solid-State Electr. 67 (2012) 74-78.

Kordoš, P., Stoklas, R., Čičo, K., and Mikulics, M.: Comparative study of InAlN/GaN HFETs with and without thermal oxidized InAlN of different composition. In: Proc. 18^thInter. Conf. on Applied Phys. of Cond. Matter (APCOM 2012). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 165-168.

2011

Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J.-F., Grandjean, N., Pogany, D., and Fröhlich, K.: Electrical properties of InAlN/GaN high electron mobility transistor with Al₂O₃, ZrO₂, and GdScO₃ gate dielectrics, J. Vacuum Sci Technol. B 29 (2011) 01A808.

Nemec, M., Benko, P., Neupauer, M., Čičo, K., Harmatha, L., and Fröhlich, K.: Preparation and characterization of thin ZrO₂ layers for gate insulation in MOSFET. In: 17^thInter. Conf. on Applied Physics of Condensed Matter – APCOM. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 98-101.

2010

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J.-F., Grandjean, N., Pogany, D., and Fröhlich, K.: Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Physica Status Solidi c 7 (2010) 108-111.

Kordoš, P., Mikulics, M., Fox, A., Gregušová, D., Čičo, K., Carlin, J.-F., Grandjean, N., Novák, J., and Fröhlich, K.: RF performance of InAlN/GaN HFETs and MOSHFETs with ƒ_T × L_G up to 21 GHz · µm, IEEE Electron Dev. Lett. 31 (2010) 180-182.

Kuzmík, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaqiere, C., DeJaeger, J.-C., Čičo,K., Frőhlich, K., Škriniarová, J., Kováč, J., Strasser, G., Pogany, D., and Gornik, E.: Proposal and performance analysis of normally-off n++ GaN/InAlN/AlN/GaN HEMTs with 1 nm thick InAlN barrier, IEEE Trans. Electron Dev. 57 (2010) 2144-2154.

Jurkovič, M., Hušeková, K., Čičo, K., Dobročka, E., Nemec, M., Fedor, J., and Fröhlich, K.: Characterization of high permittivity GdScO₃ films prepared by liquid injection MOCVD. In: ASDAM ’10. Smolenice 2010. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 247-250.

Kohn, E., Alomari, M., Denisenko, A., Dipalo, M., Maier, D., Medjoub, F., Pietzka, C., Delage, S., Di Forte Poisson, M.A., Morvan, E., Sarazin, N., Jacquet, J.-C., Dua, C., Carlin, J.-F., Grandjean, N., Py, M.A., Gonschorek, M., Kuzmík, J., Pogany, D., Pozzovivo, G., Ostermaier, C., Toth, L., Pécz, B., De Jaeger, J.-C., Gaquiere, C., Čičo, K., Fröhlich, K., Georgakilas, A., Iliopoulos, E., Konstantinidis, G., Giessen, C., Heuken, M., and Schineller, B.: InAlN/GaN heterostructures for microwave power and beyond. In: 2009 IEEE Inter. Electron Devices Meeting (IEDM). IEEE, 2010. ISBN 978-1-4244-5639-0. P. 173-176.

2009

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaqiere, C., DeJaeger, J.-C., Čičo, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., and Kuzmík, J.: Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation, IEEE Electron Dev. Lett. 30 (2009) 1030-1032.

Ťapajna, M., Kuzmík, J., Čičo, K., Pogany, D., Pozzovivo, G., Strasser, G., Aberman, S., Bertagnoli, S.E., Carlin, J.-F., Grandjean, N., and Frőhlich, K.: Interface states and trapping effects in Al₂O₃– and ZrO₂/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures, Japan. J. Applied Phys. 48 (2009) 090201.

Ťapajna, M., Čičo, K., Kuzmík, J., Pogany, D., Pozzovivo, G., Strasser, G., Carlin, J.-F., Grandjean, N., and Frőhlich, K.: Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al₂O₃/InAlN/GaN heterostructures, Semicond. Sci Technol. 24 (2009) 035008.

Čičo, K., Kuzmík, J., Liday, J., Hušeková, K., Pozzovivo, G., Carlin, J.-F., Grandjean, N., Pogany, D., Vogrinčič, P., and Frőhlich, K.: InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al₂O₃ insulating films grown by metal organic chemical vapor deposition using Ar and NH₃ carrier gases, J. Vacuum Sci Technol. B 27(2009) 218-222.

Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Čičo, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., and Kuzmík, J.: Thermally stable InAlN/GaN enhancement-mode HEMTs with highly doped GaN Cap. In: 8^th Inter. Conf. on Nitride Semiconductors. Jeju (Korea) 2009. Abstract Book. P. 1052.

Hušeková, K., Jurkovič, M., Čičo, K., Machajdík, D., Dobročka, E., Lupták, R., Macková, A., and Frőhlich, K.: Preparation of high permitivity GdScO₃ films by liquid injection MOCVD, ECS Trans. 25 (2009) 1061.

Frőhlich, K., Vincze, A., Dobročka, E., Hušeková, K., Čičo, K., Uherek, F., Lupták, R., Ťapajna, M., and Machajdík, D.: Thermal stability of GdScO₃ dielectric films grown on Si and InAlN/GaN substrates, Mater. Res. Soc. Symp. Proc. 1155 (2009) C09-03.

2008

Pozzovivo, G. J., Kuzmík, J., Golka, K., Čičo, K., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Grandjean, N., Schrenk, G., Strasser, W., and Pogany, D.: Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al₂O₃ gate insulation grown by CVD, Physica Status Solidi c 5 (2008) 1956-1958.

Ťapajna, M., Čičo, K., Kuzmík, J., Pozzovivo, G., Pogany, D., Carlin, J.-F., Grandjean, N., and Fröhlich, K.: Characterization of semiconductor/oxide interface states in the Al₂O₃/InAlN/GaN MOS structures. In: The 32^nd Workshop on Compaund Semiconductor Devices and Integrated Circuits. Leuven 2008. Abstract Book pp. 117-118.

Čičo, K., Gregušová, D., Kuzmik, J., di Forte-Poisson, M.A., Lalinský, T., Pogany, D., Delage, S.L., and Fröhlich, K.: InAlN/GaN MOSHEMT with Al₂O₃ insulating film. In: ASDAM 2008. The 7^th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 87-91.

Ťapajna, M., Čičo, K., Kuzmík, J., Pozzovivo, G., Pogany, D., Abermann, S., Bertagnolli, E., Carlin, J.F., Grandjean, N., and Fröhlich, K.: Evaluation of the interface state density on Ni/ZrO₂/InAlN/GaN MOS contacts. In: Inter. Workshop on Nitride semiconductors. Book of Ext. Abstract Montreux 2008. P. 314.

2007

Čičo, K., Kuzmík, J., Gregušová, D., Stoklas, R., Lalinský, T., Georgakilas, A., Pogany, D., and Fröhlich, K.: Optimization and performance of Al₂O₃/GaN metal-oxide-semiconductor structures, Microelectr. Reliability 47 (2007) 790-793.

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., and Kordoš, P.: AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4nm thick Al₂O₃ gate oxide, Semicond. Sci Technol. 22 (2007) 947-951.

Gregušová, D., Stoklas, R., Čičo, K., Heidelberg, G., Marso, M., Novák, J., and Kordoš, P.: Characterization of AlGaN/GaN MOSHFETs with Al₂O₃ as gate oxide, Physica Status Solidi c 4 (2007) 2720-2723.

Pozzovivo, G., Kuzmík, J., Golka, S., Schrenk, W., Strasser, G., Pogany, D., Čičo, K., Ťapajna, M., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Feltin, E., and Grandjean, N.: Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors, Applied Phys. Lett. 91 (2007) 043509.

Kordoš, P., Gregušová, D., Stoklas, R., Čičo, K., and Novák, J.: Improved transport properties of Al₂O₃/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect tranzistor, Applied Phys. Lett. 90 (2007) art. no. 123513.

Kuzmík, J., Pozzovivo, G., Čičo, K., Golka, S., Schrenk, W., Carlin, J.-F., Gonschorek, M., Grandjean, N., Fröhlich, K., Strasser, G., and Pogany, D.: Technology and performance of Al₂O₃/InAlN/AlN/GaN MOS HEMTs. In: Proc. 31^st Workshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice 2007. P. 359-362.

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Fröhlich, K., Novák, J., and Kordoš, P.: Preparation and properties of MOSHFETs based on MOVPE grown AlGaN/GaN heterostructure and MOCVD deposited Al₂O₃ gate oxide. In: 12^th European Workshop on Metalorganic Vapour Phase Epitaxy – EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 85-88.

Písečný, P., Harmatha, L., Jakabovič, J., Ťapajna, M., Lupták, R., and Čičo, K.: The properties of oxygen plasma annealed La₂O₃ films for CMOS technology. In: APCOM 2007: Proc. 13^th Inter. Conf. on Applied Physics of Condensed Matter. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 243-246.

2006

Fröhlich, K., Lupták, R., Dobročka, E., Hušeková, K., Čičo, K., Rosová, A., Lukosius, M., Abrutis, A., Písečný, P., and Espinós, J.P.: Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition, Materials Sci Semicond Process. 9 (2006) 1065-1072.

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P.K., Lindner, J., and Espinós, J.P.: Properties of Ru/Hf_xSi_1-xO_y/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition, J. Electrochem. Soc. 153 (2006) F176-F179.

Čičo, K., Kuzmik, J., Gregušová, D., Lalinský, T., Georgakilas, A., Pogany, D., and Fröhlich, K.: Rapid thermal annealing and performance of Al₂O₃/GaN metal-oxide-semiconductor structures. In: ASDAM 2006. Proc. 6^th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 197-200.

Stoklas, R., Čičo, K., Gregušová, D., Novák, J., and Kordoš, P.: Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al₂O₃ as gate oxide. In: ASDAM 2006. Proc. 6^th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 249-252.

Čičo, K., Kuzmik, J., Gregušová, D., Lalinský, T., Pogany, D., and Fröhlich, K.: Optimization and performance of Al₂O₃/GaN metal-oxide-semiconductor structures. In: The 14^th Workshop on Dielectrics in Microelectronics (WoDim). Santa Tecla 2006. Book of abstracts. P. 209-210.

2005

Čičo, K., Rosová, A., Frőhlich, K., Hušeková, K., Valent, P., and Jergel, M.: Characterization of Al₂O₃ gate dielectric films grown on Si substrate. In: APCOM 2005: Proc. 11^th Inter. Workshop on Applied Physics of Condensed Matter. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 196-199.

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P.K., and Lindner, J.: Properties of Ru/Hf_xSi_1-xO_y/SI MOS gate stack structures grown by MOCVD. In: Proc. 207^th Electrochemical Soc. Meeting. Eds. Gusev, E.P. et al. Pennington: The Electrochemical Society, 2005. P. 339.

2004

Ťapajna, M., Čičo, K., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J.C., and Roozeboom, F.: Thermal stability of ruthenium MOS gate electrodes. In: ASDAM 2004. Piscataway: IEEE 2004. S. 167-170.