Ing. Eva KOVÁČOVÁ

  • 2024

Kurucová, N., Šagátová, A., Pavlovič, M., Zaťko, B., Kováčová, E., Boháček,  P., Škriniarová, J., and Predanocy, M.: Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles, J. Instrument. 19 (2024) C03049.

Zaťko, B., Šagátová, A., Hrubčín, L., Kováčová, E., Novák, A., Kurucová, N., Polansky, Š., and Jakůbek, J.: Imaging and spectrometric performance of SiC Timepix3 radiation camera, J. Instrument. 19 (2024) C01003.

Kurucová, N., Šagátová, A., Kováčová, E., and Zaťko, B.: Influence of quasi-ohmic electrode on performance of semi-insulting GaAs detectors, AIP Conf. Proc. 3054 (2024) 050005.

Šagátová, A., Hrubčín, L., Kurucová, N., Nečas, V., Kováčová, E., Evseev, S.A., and Zaťko, B.: Electrical properties study of the 4H-SiC detectors based on thick epitaxial layer, AIP Conf. Proc. 3054 (2024) 050011.

Zaťko, B., Šagátová, A., and Kováčová, E.: Detection and spectrometric properties of the 4H-SiC Schottky detectors based on thick epitaxial layers, AIP Conf. Proc. 3251 (2024) 080006.

Hrubčín, L., Zaťko, B., and Kováčová, E.: Silicon radiation detectors with rectifier junction prepared by different technological procedures, AIP Conf. Proc. 3251 (2024) 080005.

Šagátová, A., Kováčová, E., Benčurová, A., Konečníková, A., Gregušová, D., Nečas, V., and Zaťko, B.: The bias effect on alpha spectrometry of very thin semi-insulating GaAs detectors, AIP Conf. Proc. 3251 (2024) 080010.

Huran, J., Skrypnik, A.V., Dujnič, V., Doroshkevich, A.S., Nozdrin, M. A., Kováčová, E, and Shirkov, G.D.: Photoelectron emission properties of very thin carbon films prepared by electron beam-plasma vacuum deposition and reactive magnetron sputtering. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 41-44. ISBN 978-80-554-2109-4.

  • 2023

Zaťko, B., Šagátová, A., Kováčová, E., Novák, A., Sýkora, R., Kohout, Z., and Polansky, Š.: Detection of fast neutrons using 4H-SiC radiation detectors, EPJ Web Conf. 288 (2023) 03004.

Šagátová, A., Kurucová, N., Kotorová, S., Kováčová, E., and Zaťko, : Influence of base material thickness on spectrometry of semiconductor detectors based on semi-insulating GaAs, EPJ Web Conf. 288 (2023) 10013.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

Gál, N., Hrubčín, L., Šagátová, A., Vanko, G., Kováčová, E., and Zaťko, B.:  High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C, Applied Surface Sci 635 (2023) 157708.

Selnekovič, D., Goffová, K., Šoltýs, J., Kováčová, E., and Kodada, J.: Mordellistena platypoda, a new species of tumbling flower beetle from the island of Ischia in Italy (Coleoptera, Mordellidae), ZooKeys 1148 (2023) 41-63.

Zaťko, B., Hrubčín, L., Boháček, P., Gurov, Y.B., Rozov, S.V., Evseev, S.A., Bulavin, M.V., Zamiatin, N.I., Kopylov, Y.A., Sekáčová, M., and Kováčová, E.: Spectrometric performance of 4H-SiC detectors after neutron irradiation, AIP Conf. Proc. 2778 (2023) 060012.

Šagátová, A., Novák, A., Kováčová, E., Riabukhin, O., Kotorová, S., and Zaťko, B.: Radiation-degraded SI GaAs detectors and their metallization, AIP Conf. Proc. 2778 (2023) 060009.

Huran, J., Skrypnik, A.V., Dujnič, V., Doroshkevich, A.S., Zaťko, B., Nozdrin, M.A., Kováčová, E., and Shirkov, G.D.: Raman spectroscopy study of very thin carbon films prepared by electron beam-plasma vacuum deposition. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 67-70.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Material properties of MOCVD-grown β- and κ-Ga2O3 thin films on 4H-SiC substrates. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 87-90.

  • 2022

Šagátová, A., Kováčová, E., Novák, A., Nečas, V., and Zaťko, B.: Alpha-spectrometry by radiation-degraded semi-insulating GaAs detectors, Mater. Today: Proc. 53 (2022) 293-298.

Šagátová, A., Gál, N., Novák, A., Kotorová, S., Riabukhin, O., Kováčová, E., and Zaťko, B.: GaAs radiation-degraded detectors: gamma spectrometry at lowered temperatures, J. Instrum. 17 (2022) C12018.

Zaťko, B., Šagátová, A., Gál, N., Novák, A., Osvald, J., Boháček, P., Polansky, Š., Jakůbek, J., and Kováčová, E.: From a single silicon carbide detector to pixelated structure for radiation imaging camera, J. Instrum. 17 (2022) C12005.

Huran, J., Sasinková, V., Nozdrin, M.A., Kováčová, E., Kobzev, A.P., and Kleinová, A.: Photo-induced electron emission of nanostructured carbon thin film based transmission photocathodes at different electric field, Adv. Electr. Electron. Engn.  20 (2022) 108-114.

Zehetner, J., Vanko, G., Izsák, T., Kováčová, E., Držík, M., Dohnal, F., and Kromka, A.: Diamond cantilevers for MEMS sensor applications fabricated by laser abiation and optimized etching techniques. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 195-198.

Zaťko, B., Šagátová, A., Osvald, J., Gál, N., Hrubčín, L., and Kováčová, E., and Gurov, Y. B.: High-quality detectors based on 4H-SiC operated at different temperatures. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 203-206.

Huran, J., Skrypnik, A.V., Dujnič, V., Doroshkevičch, A.S., Zaťko, B., Nozdrin, M.A.,  Kováčová, E., and Shirkov, G.D.: Electron beam-plasma vacuum deposition of very thin carbon films: photocathode application. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 123-126.

Izsák, T., Kováčová, E., Vanko, G., Haščík, Š., Zehetner, J., Vojs, M., and Zaťko, B.: Optimization of mask material for deep reactive ion etching of GaAs structures. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 169-172.

Huran, J., Skrypnik, A.P., Sasinková, V., Doroshkevich, A.S., Nozdrin, M.A., Kováčová, E., and Shirkov, G.D.: Effect of electric field on the photoelectron emission properties of very thin carbon films prepared by electron beam-plasma vacuum deposition. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 129-132.

  • 2021

Šagátová, A., Kršjak, V., Sojak, S., Riabukhin, O., Kováčová, E., and Zaťko, B.: Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy, J. Instrum. 16 (2021) C12032.

Šagátová, A., Kováčová, E., Novák, A., Fulöp, M., and Zaťko, B.: Current-voltage characterization of GaAs detectors and their holders irradiated by high-energy electrons, Applied Surface Sci 552 (2021) 149474.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: The study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Ivanov, O.M., Sekáčová, M., Kováčová, E., Gurov, Y.B., and Skuratov, V.A.: Study of the pulse height defect of 4H-SiC Schottky barrier detectors in heavy ion detection, AIP Conf. Proc. 2411 (2021) 070007.

Šagátová, A., Zaťko, B., Kováčová, E., and Nečas, V.: Gamma spectrometry of different energies by radiation-degraded SI GaAs detectors, AIP Conf. Proc. 2411 (2021) 080013.

Huran, J., Balalykin, N.I., Skrypnik, A.P., Sasinková, V., Nozdrin, M.A., Kováčová, E., and Shirkov, G.D.: Electron beam-plasma vacuum deposition of very thin carbon films on quartz. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 13-16.

  • 2020

Huran, J., Balalykin, N.I., Sasinková, V., Kleinová, A., Nozdrin, M.A., Kobzev, A.P., and Kováčová, E.: Very thin N-doped nanostructured carbon films on quartz and sapphire substrate: Photoelectron emission properties, Thin Solid Films 709 (2020) 138200.

Balalykin, N.I., Huran, J., Nozdrin, M.A., Sasinková, V., Kováčová, E., Kobzev, A.P., and Shirkov, G.D.: Very thin carbon-based films for transmissive photocathodes, J. Phys.: Conf. Ser. 1492 (2020) 012034.

Zaťko, B., Šagátová, A., Zápražný, Z., Boháček, P., Sekáčová, M., Kováčová, E., Žemlička, J., Jakůbek, J., Korytár, D., Gál, N., and Nečas, V.: Study of the contrast resolution of Timepix detector with a semi-insulating GaAs sensor, J. Instrument. 15 (2020) C04004.

Huran, J., Balalykin, N.I., Sasinková, V., Nozdrin, M.A., Kováčová, E., Kobzev, A.P., Kleinová, A., and Shirkov, G.D.: Photo-induced electron emission at different electric field of nanostructured carbon thin film based transmission photocathodes. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 29-32.

Šagátová, A., Zaťko, B., Kováčová, E., and Nečas, V.: Gamma spectrometry of semi-insulating GaAs detectors degraded by 5 MeV electrons up to 2 MGy. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 139-142.

Zaťko, B., Šagátová, A., Hrubčín, L., Boháček, P., Kováčová, E., and Gurov, Y. B.: The Schottky barrier detectors based on 4H-SiC epitaxial layer. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 143-146.

  • 2019

Huran, J., Balalykin, N.I., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., and Kováčová, E.: Nitrogen-doped carbon-based very thin film on quartz or sapphire substrate as back-side illuminated transmission photocathode, Sensors & Transduc. 235, Iss. 7 (2019) 9-14.

Zaťko, B., Hrubčín, L., Boháček, P., Osvald, J., Šagátová, A., Sekáčová, M., Kováčová, E., and Nečas, V.: Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer, AIP Conf. Proc. 2131 (2019) 020054.

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023.

Huran, J., Hrubčín, L., Boháček, P., Skuratov, V.A., Kleinová, A., Sasinková, V., Kobzev, A.P., and Kováčová, E.: The effect of Xe ion irradiation on the properties of SiC(P) and SiC(B) film prepared by PECVD technology. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 155-160.

Huran, J., Balalykin, N.I., Sasinková, V., Nozdrin, M.A., Kováčová, E., Kobzev, A.P., and Kleinová, A.: Raman spectroscopy study of carbon-based very thin films prepared by magnetron sputtering. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 285-288.

  • 2018

Donchev, I., Šmatko, V., Briančin, J., Kupka, D., and Kováčová, E.: New experimental approach to measure the photocatalytic activity of the TiO2 nanosamples. In Nanostructured materials for the metection of CBRN. Springer 2018, p. 129-132. ISBN 978-94-024-1303-8.

Zaťko, B., Dubecký, F., Ryć, L., Šagátová, A., Sedlačková, K., Kováčová, E., and Nečas, V.:  The study of 4H-SiC alpha particle detectors with different Schottky contact metallization, AIP Conf. Proc. 1996 (2018) 020051.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Sekáčová, M., and Arbet, J.: Amorphous silicon carbide films wit wide range of phosphorus concentration: Structural and electrical properties. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 216-219. ISBN 978-80-554-1450-8.

Huran, J., Balalykin, N.I., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Laurenčíková, A., and Arbet, J.: Electron emission from N-doped carbon-based very thin films prepared by reactive magnetron sputtering. In Proc. 6th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 13-16. ISBN 978-80-554-1450-8.

Huran, J., Balalykin, N.I., Kováčová, E., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., and Laurenčíková, A.: Photo-induced electron emission properties of N-doped carbon-based very thin films. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 65-68.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 39-42.

Kubanda, D., Zaťko, B., Žemlička, J., Šagátová, A., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 121-124.

  • 2017

Huran, J., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Arbet, J., Kováčová, E., Sekáčová, M., : PECVD silicon carbide films for electromagnetic energy absorption in the 0.1-2.0THz frequency range In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 203-206.

Huran, J., Balalykin, N., Boháček, P., Nozdrin, M., Kováčová, E., Kobzev, A., Haščík, Š., Sekáčová, M., Arbet, J., Ryzá, J., : PECVD silicon carbide films on quartz glass as prospective transmission photocathodes In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 150-153.

Huran, J., Boháček, P., Hrubčín, L., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Kováčová, E., Arbet, J., : PECVD silicon carbide thin films for harsh environment applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 215-218.

  • 2015

Kunzo, P., Lobotka, P., Kováčová, E., : Modification of polyaniline-based gas sensor by electrophoretic deposition of metal nanoparticles in ionic liquids. Key Engn. Mater. 654 (2015) 224-229.

  • 2013

Kunzo, P., Lobotka, P., Kováčová, E., Chrisstopoulou, K., Papoutsakis, L., Anastasiadis, S., Križanová, Z., Vávra, I., : Nanocomposites of polyaniline and titania nanoparticles for gas sensors. Phys. Status Solidi a 210 (2013) 2341-2347.

  • 2012

Huran, J., Kučera, M., Boháček, P., Kobzev, A., Kleinová, A., Sekáčová, M., Kováčová, E., : Electron cyclotron resonance plasma technology of silicon carbon nitride thin films. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 267-270.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., Sekáčová, M., : Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties. J. Electr. Engn. 65 (2012) 333-335.

Kunzo, P., Lobotka, P., Micusik, M., Kováčová, E., : Palladium-free hydrogen sensor based on oxygen-plasma-treated polyaniline thin film. Sensors Actuators B 171-172 (2012) 838-845.

Huran, J., Kadlečíková, M., Zaťko, B., Feschenko, A., Kobzev, A., Vančo, L., Nozdrin, M., Kleinová, A.,Kováčová, E., : Photocathodes based on diamond like carbon films prepared by reactive magnetron sputtering and PECVD technology. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 263-266.

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., Kováčová, E., :Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307.

Šmatko, V., Donchev, I., Kováčová, E., Štrbik, V., Zyryn, S., : Surface modification for novel nanosensors creation. In: Nanodevices and Nanomaterials for Ecological Security, NATO Sci Peace and Security Series B: Physics and Biophysics. ISBN 978-94-007-4118-8. Dordrecht: Springer Science+Business Media 2012. P. 263.

  • 2008

Lobotka, P., Lalinský, T., Španková, M., Vávra, I., Chromik, Š., Haščík, Š., Šmatko, V., Mozolová, Ž., Kováčová, E., Dérer, J., Gaži, Š., and Gierlowski, P.: Antenna-coupled uncooled THz microbolometer based on micromachined GaAs and LSMO thin film. In IEEE Sensors 2008. Lecce, pp. 604-607.

  • 2011

Lobotka, P., Kunzo, P., Kováčová, E., Vávra, I., Križanová, Z., Šmatko, V., Stejskal, J., Konyushenko, E., Omastová, M., Spitalsky, Z., Micusik, M., Krupa, I., : Thin polyaniline and polyaniline/carbon nanocomposite films for gas sensing. Thin Solid Films 519 (2011) 4123-4127.

  • 2004

Vávra, O., Gaži, Š., Vávra, I., Dérer, J., Kováčová, E., : High efficiency Andreev reflection observed in Nb/Fe0.5Si0.5/Nb Josephson junctions. Physica C 404 (2004) 395-399.

  • 2003

Pištora, J., Yamaguchi, T., Vlček, J., Mistrík, J., Horie, M., Šmatko, V., Kováčová, E., Postava, K., Aoyama, M., : Spectral ellipsometry of binary optic gratings. Optica Applicata 33 (2003) 251-262, Proc. SPIE 5259 (2003) 415-422.

  • 2002

Kicin, S., Cambel, V., Kuliffayová, M., Gregušová, D., Kováčová, E., Novák, J., Kostič, I., Förster, A., :Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. J. Applied Physics 91 (2002) 878-880.

Cambel, V., Kicin, S., Kuliffayová, M., Kováčová, E., Novák, J., Kostič, I., Förster, A., : Preparation of patterned GaAs structures for MEMS and MOEMS. Materials Sci Engn. C 19 (2002) 161-165.

Vávra, O., Gaži, Š., Bydžovský, J., Dérer, J., Kováčová, E., Frait, Z., Marysko, M., Vávra, I., : Study of the proximity effect in the Nb′/FexSi1−x/Nb tunnel junctions. J. Magnetism Magnetic Mater. 240 (2002) 583-585.

  • 2001

Pištora, J., Bárta, O., Vlček, J., Ciprian, D., Hrabovský, D., Vávra, I., Šmatko, V., Kováčová, E., Postava, K., Kopřiva, I., : 2D optical gratings with magnetic ordering. In: ISMOT 2001. Montreal: Polytechnic Int. Press, 2001. P. 437-442.

Bydžovský, J., Vávra, I., Fröhlich, K., Polák, M., Šmatko, V., Kováčová, E., Paškevic, P., : Application of La1−xMnO3 giant magnetoresistance sensors for testing of high-TC superconducting tapes. Sensors & Actuators A 91 (2001) 21-25.

Vávra, I., Bydžovský, J., Flachbart, K., Tejada, J., Kopera, Ľ., Kováčová, E., Temst, K., Bruynseraede, Y., :Fe/Cr sensor for the milliKelvin temperature range. Sensors & Actuators A 91 (2001) 177-179.

  • 1999

Šmatko, V., Cigáň, A., Šouc, J., Hanic, F., Maňka, J., Kováčová, E., : RF SQUID prepared by SEG technology. In: Measurement ’99. Eds. I.Frollo, A.Plačková. Bratislava: IMS SAS 1999. P. 347-350.

  • 1998

Šmatko, V., Hanic, F., Šouc, J., Kováčová, E., Štrbik, V., : Selective deposition of epitaxial ybco films on Al2O3 / CeO2 substrate and titanium oxide mask applicable for patterning of stable microbridges Supercond. Sci Technol. 11 (1998) 458.

  • 1996

Chromik, Š., Beňovič, D., Kováčová, E., : Influence of ion implantation on physical properties of YBaCuO Czechoslovak J. Phys. 46 (1996) 1479.

Šmatko, V., Čičmanec, P., Hanic, F., Štrbik, V., Beňačka, Š., Chromik, Š., Beňovič, D., Kováčová, E., : Influence of ion implantation on physical properties of YbaCuO Czechoslovak J. Phys. 46 (1996) 1479.