Ing. Albín VALOVIČ

2011

Valovič, A., Huran, J., Kučera, M., Kobzev, A. P., and Gaži, Š.: Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology, European Phys. J. Applied Phys. 56 (2011) 24013.

Valovič, A., Huran, J., Kobzev, A. P., Balalykin, N. I., Kučera, M., and Haščík, Š.: Nanocrystalline silicon carbide thin films prepared by plasma enhanced chemical vapor deposition, Acta Technica 56 (2011) T291-T298.

Huran, J., Balalykin, N. I., Shirkov, G.D., Kobzev, A. P., and Valovič, A.: Nanocrystalline diamond/amorphous composite carbon films prepared by plasma chemical vapor deposition, Acta Technica 56 (2011) T278-T283.

Valovič, A., Huran, J., Kobzev, A.P., Boháček, P., and Sekáčová, M.: Application of ERD method for hydrogen determination in nanocrystalline silicon carbide thin films. In: ELITECH`11. 13th Conf. Doctoral Students FEI STU 2011. Ed. A. Kozáková. Bratislava: Nakl. STU 2011. 403 s. ISBN 978-80-227-3500-1. CD-Rom.

2010

Huran, J., Zaťko, B., Boháček, P., Kobzev, A.P., Vincze, A., Malinovský, Ľ., and Valovič, A.: Properties of hydrogenated amorphous/nanocrystalline carbon films prepared by plasma enhanced chemical vapour deposition, Inst. Phys. Conf. Series: Mater. Sci Engn. 12 (2010) 012005.

Huran, J., Boháček, P., Shvetsov, V. N., Kobzev, A. P., and Valovič, A.: Silicon carbon nitrid thin films prepared by PECVD technology. In: 7th ICRP & 63rd GEC – Conf. Proc. Neuveden: Japan Soc Applied Phys. 2010. Eds. M. Hori and W.G. Graham. ISBN 978-4-86348-101-5. LW4-003.

Huran, J., Shindov, H., Šmatko, V., Valovič, A., and Kobzev, A. P.: Electrical and optical characterization of PECVD silicon carbon nitride thin films, Annual J. Electr. 4(2010) 94.

Huran, J., Balalykin, N. I., Shirkov, G. D., Boháček, P., Kobzev, A. P., and Valovič, A.: Nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology for photocathode application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 77-80.

Boháček, P., Huran, J., Valovič, A., Kobzev, A. P., Shvetsov, V. N., Kučera, M., and Malinovsky, L.: N-doped nanocrystalline silicon carbide films prepared by PECVD technology. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 81-84.