doc. Ing. Jozef NOVÁK, DrSc.

  • 2024

Novák, J., Rosová, A., Hasenöhrl, S., Lettrichová, I., and Pudiš, D.: Nanoprobes based on 3D gap nanocones prepared by integration on single mode fiber. In Proc. 12th Inter. Conf. Adv. Electron. Photon. Technol. – ADEPT 2024. Žilina: EDIS 2024, pp. 25-28. ISBN 978-80-554-2109-4.

  • 2023

Novák, J., Eliáš, P., Hasenöhrl, S., Sojková, M., Laurenčíková, A., Kováč, J.jr., and Kováč, J.: Influence of thin Ga2Se3 interlayer on the properties of GaP/PtSe2 heterojunction. In Proc. 11th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 24-27.

Novák, J., Rosová, A., Pudiš, D., Hasenöhrl, S., Eliáš, P., and Lettrichová, I.: Integration of the three dimensional GaP nanocone onto single mode optical fibre. In: 6th Inter. Conf. on Optics, Photonics and Lasers (OPAL‘ 2023). Funchal (Madeira Island), Portugal 2023. Ed. S.Y.Yurish. – IFSA Publ., S. L., 2023, p. 107-108. ISBN 978-84-09-48335-8.

  • 2022

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J.jr., and Kováč, J.: Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode, AIP Adv. 12 (2022) 065004.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J.jr., and Kováč, J.: MOVPE growth of edge rich GaP surfaces for preparation of molybdenum disulphide. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 21-24.

  • 2021

Mikulics, M., Kordoš, P., Gregušová, D., Gaži, Š., Novák, J., Sofer, Z., Mayer, J., and Hardtdegen, H.: Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer, Sci Technol. 36 (2021) 095040.

Pudiš, D., Urbancová, P., Novák, J., Kuzma, A., Lettrichová, I., Goraus, M., Eliáš, P., Laurenčíková, A., Jandura, D., Šušlik, Ľ., and Hasenöhrl, S.: Near-field analysis of GaP nanocones, Applied Surface Sci 539 (2021) 148213.

Bruncko, J., Kováč, J., Michalka, M., Netrvalová, M., Kováč, J., Vincze, A., and Novák, J.: Electrical and optical properties of thin ZnO shell layers on GaP nanorods grown by pulsed laser deposition, Thin Solid Films 725 (2021) 138634.

Škriniarová, J., Hronec, P., Chlpík, J., Laurenčíková, A., Kováč, J.jr., Novák, J., and Andok, R.: Investigation of volume fraction of GaP nanowires by SEM characterization and spectroscopic ellipsometry, Optik 234 (2021) 166572.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., and Kováč, J.Jr.: Influence of edge rich surface on growth of MoS2 from thin molybdenum layer. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 5-8.

  • 2020

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Kováč, J.jr., Urbancová, P., and Pudiš, D.: Twinned nanoparticle structures for surface enhanced Raman scattering, Applied Surface Sci 528 (2020) 146548.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Novák, J., Kuzma, A., Goraus, M., Gaso, P., and Jandura, D.: Near and far-field analysis of Fresnel structures applied in the LED surface, Applied Surface Sci 531 (2020) 147300.

Ďurišová, J., Novák, J., Mizera, T., Pudiš, D., Eliáš, P., and Hasenöhrl, S.: Extinction measurement of gap nanocones. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 123-126.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J. jr., and Kováč, J.: MOS2/GAP heterojunction – formation and properties. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 21-24.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Novák, J., Kuzma, A., Goraus, M., Gaso, P., and Jandura, D.: Near and far field of LED with 1D fresnel structure. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 135-138.

  • 2019

Novák, J., Eliáš, P., Hasenöhrl, S., and Laurenčíková, A., Urbancová, P., and Pudiš, D.: Nanocone structures with limited interspace grown by MOVPE, Lithuanian J. Phys. 59 (2019) 179-184.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., and Novotný, I.: Raman enhancement of Ag nanoparticles. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 23-26.

  • 2018

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on 3D surfaces by interference lithography for SERS, Applied Surface Sci 461 (2018) 171-174.

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Vávra, I., Kováč, J.jr., and Kováč, J.: Deposition and properties of sulphide compunds on Gallium Phosphide nanocones. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 37-40.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J.jr., Szobolovszký, R., and Novák, J.: Ag decorated GaP nanocones for SERS. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 204-207.

Lettrichová, I., Pudiš, D., Gaso, P., Jandura, D., Kováč, J.jr., Laurenčíková, A., Novák, J., and Goraus, M.: Polymer-based 3D microcones for application in SERS, Proc. SPIE 10976 (2018) 109760V.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on GaP nanocones by interference lithography. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 41-44.

Pudiš, D., Goraus, M., Urbancová, P., Jandura, D., Gaso, P., Lettrichová, I., Martinček, I., Durisova, J., Suslik, L., Tlaczala, M., Novák, J., Kováč, J., Sciana, B., Škriniarová, J., and Kováč, J.jr.: 3D photonic technologies for applications on a chip and optical fiber. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 97-104.

Lettrichová, I., Pudiš, D., Gaso, P., Novák, J., Laurenčíková, A., Kováč, J.jr., Jandura, D., and Goraus, M.: GaP nanocones for SERS detection in lab-on-a-chip. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 57-60.

  • 2017

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165.

Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z., Kordoš, P., Hashizume, T., : Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction,. Semicond. Sci Technol. 32 (2017) 045018.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J., : Methanol sensor for integration with GaP nanowire photocathode. Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Novotný, I., Kováč, J., Valentin, M., Kováč, J., Ďurišová, J., Pudiš, D., : Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires. Applied Surface Sci 395 (2017) 180-184.

Laurenčíková, A., Dérer, J., Hasenöhrl, S., Eliáš, P., Novák, J., : Preparation of methanol concentration sensor with nanostructured surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 243-246.

Novák, J., Hasenöhrl, S., Eliáš, P., Laurenčíková, A., Kováč, J., Szobolovszký, R., Nevřela, J., : Preparation of nanocones for SERS applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 1-4.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gašo, P., Šušlik, Ľ., Jandura, D., Novák, J., : Radiation pattern of LED with 1D fresnel structure in the surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 247-250.

Ďurišová, J., Pudiš, D., Laurenčíková, A., Novák, J., Šušlik, Ľ., : Reflectance suppression of ZnO coated GaP nanowires. Thin Solid Films 640 (2017) 88–92.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Reinforcement role of GaP nanowires in a ZnO layer prepared by RF sputtering,. Vacuum 138 (2017) 218-223.

  • 2016

Mikulics, M., Arango, Y., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D.,Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H., : Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Phys. Lett. 108 (2016) 061107.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gaso, P., Šušlik, Ľ., Jandura, D., Ďurišová, J., and Novák, J.: Optical properties of GaAs-based LED with Fresnel structure in the surface, Proc. SPIE 10142 (2016) 101421P.

Laurenčíková, A., Lettrichová, I., Pudiš, D., Hasenöhrl, S., Šušlik, Ľ., Haščík, Š., Dérer, J., Novák, J., : Integration of fresnel structure on AlGaAs/GaAs led devices In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 179-182.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gašo, P., Šušlik, Ľ., Jandura, D., Ďurišová, J., Novák, J., : LED with 1D and 2D Fresnel structure in the surface In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 87-90. ISBN 978-80-971179-7-9..

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., : Young modulus and microhardness of ZnO nanolayers prepared by RF sputtering In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 34-38. ISBN 978-80-971179-7-9.

  • 2015

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Novák, J., : Covering of GaP NW arrays with ZnO layer prepared at different sputering conditions In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 71-74.

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Kováč, J., Kováč, J., Eliáš, P., Novák, J., : Formation of compact covering of vertically standing GaP nanowire arrays by Ga-doped ZnO layer. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 93.

Šušlik, Ľ., Laurenčíková, A., Durisova, J., Novák, J., Lettrichová, I., Pudiš, D., : GaP nanowires organized in 2D PhC prepared by interference lithography In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 231-234.

Gucmann, F., Kúdela, R., Dobročka, E., Mičušík, M., Rosová, A., Novák, J., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide In: 18. Škola vákuovej techniky: Nanosvet s vákuom. Bratislava: SVS, 2015. ISBN 978-80-971179-6-2. S. 27-30.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Optical and mechanical properties of compact ZnO layer with embedded GaP nanowires. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 104.

Novák, J., Telek, P., Hasenöhrl, S., Laurenčíková, A., : Spin injection in AlGaAs/GaAs LED with an incorporated in MnAs layer In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 31-33.

Kováč, J., Hronec, P., Búc, D., Škriniarová, J., Šutta, P., Kováč, J., Novák, J., : Study of ZnO nanostructures grown by a hydrothermal process on GaP/ZnO nanowires. Applied Surface Sci 337 (2015) 254-258.

  • 2014

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J., Mikolášek, M., Vávra, I., Novák, J., : Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO. Solid-State Electr. 100 (2014) 7-10.

Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Rosová, A., Novák, J., : Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth. Phys. Status Solidi RRL 8 (2014) 321-324.

Novák, J., Šutta, P., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., : Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires. Applied Surface Sci 312 (2014) 162-166.

Laurenčíková, A., Hasenöhrl, S., Dérer, J., Eliáš, P., Hronec, P., Kováč, J., Novák, J., : Fabrication of GaP nanowire arrays on top InGaP solar cells In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 259-262.

Stoklas, R., Gregušová, D., Blaho, M., Čičo, K., Fröhlich, K., Novák, J., Kordoš, P., : Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 133-136.

Novák, J., Eliáš, P., Hasenöhrl, S., Vávra, I., Križanová, Z., Novotný, I., Kováč, J., : Growth and properties of core-shel GaP/ZnO nanowires. AIP Conf. Proc. 1598 (2014) 118.

Gucmann, F., Kúdela, R., Fröhlich, K., Liday, J., Vogrinčič, P., Gaži, Š., Stoklas, R., Kordoš, P., Novák, J., Gregušová, D., : III-As high electron mobility transistors with recessed ex-situ gate oxide In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 5-8.

Mikulics, M., Hardtdegen, H., Adam, R., Grützmacher, D., Gregušová, D., Novák, J., Kordoš, P., Sofer, Z., Serafini, J., Zhang, J., Sobolewski, R., Marso, M., : Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures. Semicond. Sci Technol. 29 (2014) 045022.

Blaho, M., Dérer, J., Liday, J., Vogrinčič, P., Kordoš, P., Novák, J., Gregušová, D., : Low temperature ohmic contacts for self/aligned GaN-based HEMTs In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 124-128.

Pudiš, D., Škriniarová, J., Lettrichová, I., Laurenčíková, A., Benčurová, A., Kováč, J., Novák, J., : Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning. Proc. SPIE 9441 (2014) 94410P.

Fox, A., Mikulics, M., Hardtdegen, H., Trellenkamp, S., Arango, Y., Grützmacher, D., Sofer, Z., Gregušová, D., Novák, J., Kordoš, P., Marso, M., : Novel double-level-gate technology In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 89-92.

Kováč, J., Bruncko, J., Búc, D., Novotný, I., Novák, J., Kováč, J., : Optical properties of ZnO thin films grown on GaP substrate by different growth techniques In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 172-175.

Kováč, J., Flickyngerová, S., Weis, M., Novotný, I., Laurenčíková, A., Novák, J., : Properties of polymer- GaP/ZnO nanowire hybrid organic photovoltaic devices In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 95-98.

Bruncko, J., Michalka, M., Novák, J., Kováč, J., : Pulsed laser deposition of thin ZnO layers on GaP nanorods In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 13-18.

Mikulics, M., Hardtdegen, H., Arango, Y., Adam, R., Fox, A., Grützmacher, D., Gregušová, D., Stanček, S.,Novák, J., Kordoš, P., Sofer, Z., Juul, L., Marso, M., : Reduction of skin effect losses in double-level-T-gate structure. Applied Phys. Lett. 105 (2014) 232102.

Búc, D., Kováč, J., Kutiš, V., Murín, J., Čaplovičová, M., Škriniarová, J., Novák, P., Novák, J., Hasenöhrl, S., Dobročka, E., : Residual stress in RF magnetron deposited ZnO/GaP thin films and nanowires In: Proc. of the jointly organized WCCM XI, ECCM V, ECFD VI. Eds. E. Oñate et al. Barcelona: CIMNE 2014. ISBN: 978-84-942844-7-2. P. 2846-2856.

  • 2013

Kubicová, I., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Jakabovič, J., Šušlik, Ľ., Novák, J., Kuzma, A., :2D irregular structure in the LED surface patterned by NSOM lithography,. Applied Surface Sci 267 (2013) 116-119.

Škriniarová, J., Búc, D., Kováč, J., Novák, J., : Deposition of ZnO:Al thin films on tilted GaP-NWs by RF reactive magnetron sputtering. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 282-286.

Pudiš, D., Hronec, P., Kováč, J., Lettrichová, I., Škriniarová, J., Jandura, D., Slabeyciusová, S., Šušlik, Ľ.,Novák, J., Kuzma, A., : Emission properties of surface patterned LEDs Proc. SPIE 8816 (2013) 8816-46.

Kováč, J., Kováč, J., Novák, J., Novotný, I., : Influence of thermal annealing on structural propertis of GaP/ZnO heterojunction In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 145-148.

Novák, J., Laurenčíková, A., Vávra, I., Hasenöhrl, S., Reiffers, M., : Magnetic properties of InMnAs nanodots prepared by MOVPE. J. Magnetism Magnetic Mater. 327 (2013) 20-23.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

Lettrichová, I., Pudiš, D., Šušlik, Ľ., Kováč, J., Kováč, J., Škriniarová, J., Novák, J., : Optical field of LED with predefined structure in the surface analyzed by NSOM. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 254-257.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Hasenöhrl, S., Novák, J., Škriniarová, J., Kováč, J., : Predefined planar structures in semiconductor surfaces patterned by NSOM lithography Proc. SPIE 8816 (2013) 8816-45.

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., Mikulics, M., Grünberg, P., : Properties of individual GaP/ZnO core-shell nanowires with radial PN junction, Proc. SPIE 8766 (2013) 8766-8.

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., Mikulics, M., : Structural and optical properties of individual GaP/ZnO core-shell nanowires. Vacuum 98 (2013) 106-110.

Kúdela, R., Šoltýs, J., Vincze, A., Novák, J., : Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy. Phys. Status Solidi RRL 7 (2013) 443–446.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76.

  • 2012

Pudiš, D., Kubicová, I., Škriniarová, J., Kováč, J., Jakabovič, J., Novák, J., Šušlik, Ľ., Haščík, Š., : 2D irregular structures patterning and analysis of LED by NSOM. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 167-170.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kubicová, I., Martinček, I., Novák, J., Haščík, Š., : 2D photonic structure with square symmetry in the GaAs/AlGaAs LED surface. In: Elektro 2012. Žilina: EF ŽU, 2012. ISBN 978-1-4673-1178-6. P. 523-526.

Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J., : Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113.

Stoklas, R., Gregušová, D., Novák, J., Kordoš, P., Tajima, M., Hashizume, T., : Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 36-40.

Pudiš, D., Šušlik, Ľ., Škriniarová, J., Kováč, J., Jakabovič, J., Kubicová, I., Kováč, J., Novák, J., Haščík, Š., : Effect of 2D PhC structure patterned in LED surface on emission properties. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 25-28.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Kubicová, I., Novák, J., Haščík, Š., : Emission and absorption properties of patterned LED with2D PhC. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 299-302.

Laurenčíková, A., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : GaP/ZnO nanowires with a radial pn heterojunction. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 115-118.

Kučera, M., Kúdela, R., Novák, J., : Kučera, M., Kúdela R., and Novák, J.: Photoreflectance study of the role of a thin AlOx layer in a GaAs surface passivation and the Schottky barrier forming. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 231-234.

Kubicová, I., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Jakabovič, J., Šušlik, Ľ., Novák, J., : LED with 2D irregular structure in the surface prepared by NSOM lithography. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 251-254.

Novák, J., Mikulics, M., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., : Photoluminescence of single GaP/ZnO core-shell nanowires. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 127-130.

Novotný, I., Tvarožek, V., Šutta, P., Netrvalová, M., Novák, J., Vávra, I., Eliáš, P., : Preparation of shell nanocrystalline Ga-doped ZnO ultra-thin films by sputtering. In: 28th Inter. Conf. Microelectr. Piscataway: IEEE, 2012. ISBN 978-1-4673-0235-7. P. 269-272.

Novák, J., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Križanová, Z., Vávra, I., Stoklas, R., : Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires. Applied Surface Sci 258 (2012) 7607-7611

Kováč, J., Čaplovičová, M., Búc, D., Brath, T., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : Properties of GaP/ZnO heterostructures for photovoltaics. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 263-266.

Križanová, Z., Vávra, I., Hasenöhrl, S., Novák, J., : TEM analysis of InMnAs layers and dots prepared by low pressure MOVPE. Vacuum 86 (2012) 657-660.

  • 2011

Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., Šatka, A., : Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kubicová, I., Tvarožek, V., Martinček, I., Novák, J., : GaAs/AlGaAs light emitting diode with 2D photonic structure in the surface, Proc. SPIE Metamaterials VI 8070 (2011) 807017-1-7.

Hasenöhrl, S., Eliáš, P., Vávra, I., Novotný, I., Kováč, J., Novák, J., : GaP/ZnO core-shell nanowires – growth and characterization. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 259-262.

Kováč, J., Brath, T., Novotný, I., Bruncko, J., Búc, D., Kadar, O., Hasenöhrl, S., Novák, J., : Growth and characterization of GaP/ZnO heterojunction properties. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 40-43.

Šoltýs, J., Kúdela, R., Kučera, M., Eliáš, P., Novák, J., Cambel, V., Vávra, I., Kostič, I., : Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape. J. Crystal Growth 316 (2011) 67-70.

Pudiš, D., Šušlik, Ľ., Škriniarová, J., Kováč, J., Martinček, I., Kováč, J., Haščík, Š., Kubicová, I., Novák, J., Veselý, M., : Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM. Optics Laser Technol. 43 (2011) 917-921.

Novák, J., Telek, P., Vávra, I., Hasenöhrl, S., Reiffers, M., : MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layer. J. Crystal Growth 315 (2011) 78-81.

Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., Kordoš, P., : Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering. J. Vacuum Sci Technol. B 29 (2011) 01A809.

Novák, J., Vávra, I., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., Magen, C., : Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE. J. Crystal Growth 318 (2011) 576-579.

  • 2010

Novák, J., Vávra, I., Križanová, Z., Hasenöhrl, S., Šoltýs, J., Reiffers, M., Štrichovanec, P., : Dependence of Curie temperature on surface strain in InMnAs epitaxial structures. Applied Surface Sci 256 (2010) 5672-5675.

Telek, P., Hasenöhrl, S., Šoltýs, J., Vávra, I., Držík, M., Novák, J., : Design, preparation and properties of spin-LED structures based on InMnAs. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 175-178.

Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P., :InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN. Applied Phys. Lett. 97 (2010) 173505.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Kubicová, I., Martinček, I., Jakabovič, J., Novák, J., : Light emitting diode with 2D PhC structure in the surface analysed by NSOM. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 21-24.

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., Kordoš, P., : Oxidized Al film as an insulation layer in AlGaN/GaN Metal–Oxide–Semiconductor heterostructure field effect transistors Japan. J. Applied Phys. 49 (2010) art. no. 046504.

Kordoš, P., Mikulics, M., Fox, A., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Novák, J., Fröhlich, K., :RF performance of InAlN/GaN HFETs and MOSHFETs with up to 21. IEEE Electron Dev. Lett. 31 (2010) 180-182.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.

Gregušová, D., Stoklas, R., Mizue, C., Hori, Y., Novák, J., Hashizume, T., Kordoš, P., : Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition. J. Applied Phys. 107 (2010) 106104.

Kordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., : Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurement. Applied Phys. Lett. 96 (2010) 013505.

Gregušová, D., Mizue, C., Hori, Y., Stoklas, R., Novák, J., Hashizume, T., Kordoš, P., : Trapping effects in Al2O3/AlGaN/GaN MOS structures with gate oxide prepared by different deposition techniques. . In: 10th Expert Evaluation & Control Compound Semicond Mater. & Technol. – EXMATEC 2010. Eds. D. Pavlidis et al. Darmstadt/Seeheim: TU Darmstadt 2010. ISBN: 978-3-00-030837-6. P. 139-140.

  • 2009

Novák, J., Vávra, I., Šoltýs, J., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., : Effect of nanodimension on the properties of III-V ferromagnetic semiconductors. In: Proc. 17th Conf. Slovak Physicists. Ed. M. Reiffers. Bratislava: Slovak Phys. Soc., 2009. ISBN 978-80-969124-7-6. P. 13-16.

Kordoš, P., Stoklas, R., Gregušová, D., Novák, J., : Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis. Applied Phys. Lett. 94 (2009) 223512.

Gregušová, D., Stoklas, R., Eickelkamp, M., Fox, A., Novák, J., Vescan, A., Grützmacher, D., Kordoš, P., :Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements. Semicond. Sci Technol. 24 (2009) 075014.

Kučera, M., Novák, J., : Radiative-recombination transitions in sulphur-doped GaSb. J. Luminiscence 129 (2009) 238-242.

  • 2008

Stoklas, R., Gaži, Š., Gregušová, D., Novák, J., Kordoš, P., : Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide. Physica Status Solidi c 5 (2008) 1935-1937.

Stoklas, R., Gregušová, D., Novák, J., Kordoš, P., : Influence of annealing on electrical properties of AlGaN/GaN HFETs and MOSHFETs using Al2O3. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 263-266.

Novák, J., Vávra, I., Hasenöhrl, S., Šoltýs, J., Štrichovanec, P., Balazsi, K., : Influence of GaAs cap layer on the relaxation of InMnAs dots. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 171-174.

Novák, J., Eliáš, P., Šoltýs, J., Hasenöhrl, S., Vávra, I., : InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 219-222.

Stoklas, R., Gregušová, D., Novák, J., Vescan, A., Kordoš, P., : Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis. Applied Phys. Lett. 93 (2008) 124103.

Eliáš, P., Kostič, I., Kúdela, R., Novák, J., : Localised etching of (100) GaAs via an AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 303-306.

Hasenöhrl, S., Kučera, M., Morvic, M., Novák, J., : OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 111-114.

Kordoš, P., Gregušová, D., Stoklas, R., Gaži, Š., Novák, J., : Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness,. Solid-State Electr. 52 (2008) 973-979.

  • 2007

Gregušová, D., Stoklas, R., Čičo, K., Heidelberg, G., Marso, M., Novák, J., Kordoš, P., : Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide, Physica Status Solidi c 4 (2007) 2720-2723.

>Štrichovanec, P., Kúdela, R., Vávra, I., Kováč, J., Šoltýs, J., Novák, J., : Characterization of corrugated MQW heterostructure prepared on patterned (001) GaAs substrate by MOVPE Physica Status Solidi c 4 (2007) 1499-1502.

Gregušová, D., Kučera, M., Hasenöhrl, S., Vávra, I., Štrichovanec, P., Martaus, J., Novák, J., : Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers. Physica Status Solidi c 4 (2007) 1419-1422.

Kordoš, P., Gregušová, D., Stoklas, R., Čičo, K., Novák, J., : Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect tranzistor. Applied Phys. Lett. 90 (2007) 123513.

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Influence of surface strain on the MOVPE growth on InGaP epitaxial layers. Applied Phys. 87 (2007) 511-516.

Hasenöhrl, S., Kučera, M., Morvic, M., Novák, J., : Manganese incorporation during the OMVPE growth of GaAs. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 117-120.

Reparaz, J., Bernardi, A., Goni, A., Alonso, M., Garriga, M., Novák, J., Vávra, I., : Phonon pressure coefficient as a probe of the strain status of self-assembled quantum dots. Applied Phys. Lett. 91 (2007) 081914.

Novák, J., Hasenöhrl, S., Kučera, M., Vávra, I., Štrichovanec, P., Kováč, J., Vincze, A., : Photoluminiscence and TEM characterization of (AlyGa1-y)1-x InxP layers grown on graded buffers. Physica Status Solidi c 4 (2007) 1503-1507.

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Fröhlich, K., Novák, J., Kordoš, P., : Preparation and properties of MOSHFETs based on MOVPE grown AlGaN/GaN heterostructure and MOCVD deposited Al2O3 gate oxide. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 85-88.

Novák, J., Hasenöhrl, S., Vávra, I., Sedlačková, K., Kučera, M., Radnóczi, G., : Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE. J. Crystal Growth 298 (2007) 76-80.

Kordoš, P., Gregušová, D., Stoklas, R., Lalinský, T., Novák, J., : Transconductance enhancement in AlGaN/GaN MOSHEFTs with Al2O3 gate oxide. In: Proc. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice: 2007. P. 381-384.

  • 2006

Eliáš, P., Štrichovanec, P., Kostič, I., Novák, J., : Conformal, planarizing and bridging AZ5214-E layers deposited by a ‚draping‘ technique on non-planar III–V substrates. J. Micromech. Microengn. 16 (2006) 2608–2617.

Novák, J., Foit, J., Janíček, V., : Coupling capacitances of connecting-lead systems in integrated circuits. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 39-42.

Štrichovanec, P., Kúdela, R., Vávra, I., Srnánek, R., Novák, J., : Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 233-236.

Eliáš, P., Gregušová, D., Štrichovanec, P., Kostič, I., Novák, J., : Deposition of AZ5214-E layers on non-planar substrates with a “draping” technique. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 97-100.

Štrichovanec, P., Kúdela, R., Vávra, I., Novák, J., : Characterization of QWIP structures prepared on GaAs-patterned substrates. Microeletr. J. 37 (2006) 888-891.

Peternai, L., Kováč, J., Irmer, G., Hasenöhrl, S., Novák, J., Srnánek, R., : Investigation of graded InxGa1-xP buffer by Raman scattering method. Microelectr. J. 37 (2006) 487-490.

Kučera, M., Novák, J., : Optical characterization of gallium antimonide highly doped with manganese. J. Phys. Chem. Solids. 67 (2006) 1724-1730.

Stoklas, R., Čičo, K., Gregušová, D., Novák, J., Kordoš, P., : Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide. In: ASDAM 2006. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 249-252.

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates. Applied Surface Sci 252 (2006) 4178-4184.

Novák, J., Štrichovanec, P., Vávra, I., Kúdela, R., Kučera, M., : Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces. Microelectron. J. 37 (2006) 1515-1518.

  • 2005

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

Gregušová, D., Bernát, J., Držík, M., Marso, M., Uherek, F., Novák, J., Kordoš, P., : Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs. Phys. Status Solidi c 2 (2005) 2619-2622.

Štrichovanec, P., Novák, J., Vávra, I., Kúdela, R., Kučera, M., Šoltýs, J., : QWIP structures prepared on wet-etched non-planar GaAs. Phys. Status Solidi c 2 (2005) 1384-1388.

  • 2004

Kordoš, P., Morvic, M., Betko, J., Novák, J., Flynn, J., Brandes, G., : Conductivity and Hall effect of free-standing highly resistive epitaxial GaN:Fe substrates. Applied Phys. Lett. 85 (2004) 5616-5620.

Hasenöhrl, S., Novák, J., Vávra, I., Šatka, A., : Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy. J. Crystal Growth 272 (2004) 633-641.

Kicin, S., Kromka, A., Kúdela, R., Hasenöhrl, S., Schwarz, A., Novák, J., : Micro-Raman study of InGaP composition grown on V-grooved substrates. Materials Sci Engn. B 113 (2004) 111-116.

Novák, J., Hasenöhrl, S., Kučera, M., Šoltýs, J., : Nano-patterning surfaces by the self-organized growth of ordered and strained epitaxial layers. Superlatt. Microstruct. 36 (2004) 123-131.

Kováč, J., Peternai, L., Jakabovič, J., Šatka, A., Hasenöhrl, S., Novák, J., Gottschalch, V., Rheinländer, B., : New development of LED structures directly grown on GaP substrate. In: Proc. Inter. Conf. Electroluminiscence 2004. Toronto: 2004. P. 236-240.

Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., Fedor, J., : Resistivity and mobility in ordered InGaP grown by MOVPE. Physica Status Solidi (c) 1 (2004) 382-387.

Gregušová, D., Novák, J., Hardtdegen, H., Šoltýs, J., Kostič, I., Greguš, J., : Smooth GaN recess wet photoelectrochemical etching. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 199-202.

  • 2003

Hasenöhrl, S., Novák, J., Kúdela, R., Betko, J., Morvic, M., Fedor, J., : Anisotropy in transport properties of ordered strained InGaP. J. Crystal Growth 248 (2003) 369.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Influence of ordered and random parts on properties of InGaP alloy grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 161.

Kúdela, R., Štrichovanec, P., Gregušová, D., Cambel, V., Šoltýs, J., Hasenöhrl, S., Novák, J., Kostič, I., Attolini, G., Pelosi, C., : MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates. In: EW MOVPE X. Univ. Lecce 2003. P. 219.

Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., Fedor, J., : Temperature dependent magnetoresistance characterization of ordered strained InGaP grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 163.

  • 2002

Hasenöhrl, S., Kúdela, R., Novák, J., Tuomi, T., Knuuttila, L., : Anisotropic surface structure in ordered strained InGaP. Materials Sci Engn. B 88 (2002) 134-138.

Novák, J., : Atomárny ordering v tuhých roztokoch AIIIBV polovodičov. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 17.

Novák, J., : Atomic ordering and its influence on the optical and electrical properties of InGaP grown by MOVPE. In: NATO ARW Workshop Atomistic Aspects of Epitaxial Growth. Dordrecht: Kluwer Acad. Publ., 2002. P. 285-288.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Effect of strain and ordering on the band-gap energy of InGaP. Materials Sci Engn. B 88 (2002) 139-142.

Kicin, S., Cambel, V., Kuliffayová, M., Gregušová, D., Kováčová, E., Novák, J., Kostič, I., Förster, A., :Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. J. Applied Physics 91 (2002) 878-880.

Kúdela, R., Kučera, M., Gregušová, D., Cambel, V., Novák, J., : MOVPE growth of 1220 nm (InGa)(AsP) LED structures. In: ASDAM ’02. Ed. J.Breza and D.Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 183.

Kučera, M., Novák, J., : Photoluminescence characterisation of Bismuth doped GaSb. In: ASDAM ’02. Ed. J.Breza and D.Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 149.

Cambel, V., Kicin, S., Kuliffayová, M., Kováčová, E., Novák, J., Kostič, I., Förster, A., : Preparation of patterned GaAs structures for MEMS and MOEMS. Materials Sci Engn. C 19 (2002) 161-165.

Kúdela, R., Kučera, M., Novák, J., Ferrari, C., Pelosi, C., : Study of narrow InGaP/(In)GaAs quantum wells. J. Crystal Growth 242 (2002) 132-140.

  • 2001

Novák, J., Hasenöhrl, S., Alonso, M., Garriga, M., : Influence of tensile and compressive strain on the band gap energy of ordered InGaP. Applied Phys. Lett. 79 (2001) 2758-2760.

Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., Meertens, D., : Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires. Materials Sci & Engn. B 80 (2001) 184-187.

  • 2000

Kúdela, R., Morvic, M., Kučera, M., Kicin, S., Novák, J., : Electrical properties of 2DEG in the GaAs/InGaP based structures. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 223-226.

Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.

Novák, J., Kicin, S., Hasenöhrl, S., Vávra, I., Kučera, M., Hudek, P., : InGaP/GaAs/InGaP quantum wires grown on pre-patterned substrates by MOVPE. Microelectr. Engn. 51-52 (2000) 11-17.

  • 1999

Novák, J., Hasenöhrl, S., Cambel, V., Kučera, M., Wehmann, H., Wuellner, D., : Electrical and morphological properties of InGaP Mater. Sci Engn. B 66 (1999) 102-105.

Kúdela, R., Kučera, M., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in MOVPE grown InGaP/GaAs structures. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: IP ASCR 1999. P. 131-133.

Mareš, J., Krištofik, J., Hubík, P., Feng, X., Novák, J., Hasenöhrl, S., : Highly disordered two-dimensional electron systém in a weak magnetic field Europhys. Lett. 45 (1999) 374-380.

Hasenöhrl, S., Novák, J., Kučera, M., Kúdela, R., : Influence of growth conditions on resistivity of ordered InxGa1-xP grown by LP-MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 127-130.

Kicin, S., Hasenöhrl, S., Novák, J., Vávra, I., Kučera, M., Hudek, P., : InGaP/GaAs/ InGaP quantum well OMVPE growth on pre-patterned GaAs substrates. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 135-138.

Betko, J., Morvic, M., Novák, J., Förster, A., Kordoš, P., : Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs J. Applied Phys. 86 (1999) 6243-6248.

Hudek, P., Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., : MOVPE growth of GaAs/InGaP low-dimensional structures on patterned GaAs substrates. In: ELITECH `99. Eds.: J.Tóbik, R.Redhammer. Bratislava: STU 1999. P. 125-126.

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR Materials Sci Engn. B 65 (1999) 106-110.

Eliáš, P., Cambel, V., Hasenöhrl, S., Hudek, P., Novák, J., : SEM and AFM characterisation of high MESA patterned InP subtrated prepared by wet etching Mater. Sci Engn. B 66 (1999) 15-20.

  • 1998

Kordoš, P., Novák, J., : (Eds.) Heterostructure epitaxy and devices – HEAD ’97. Dordrecht: Kluwer Acad. Pub 1998. ISBN 0-7923-5013-8.

Kicin, S., Novák, J., Eliáš, P., Hudek, P., : Fabrication of quantum wires structures. In: ELITECH 98. Bratislava: TU 1998. P. 153.

Cambel, V., Kúdela, R., Gregušová, D., Hasenöhrl, S., Eliáš, P., Novák, J., : Characterization of 2DEG Hall probes in high magnetic field at 4,2K. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 31.

Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Olejníková, B., Novák, J., Schaepers, T., Neurohr, K., Fox, A., : Characterization of InGaAs/InP microscopic Hall probe arrays with 2DEG active layer Mater. Sci Engn. B 51 (1998) 188.

Novák, J., : InGaP quantum wire structures grown by MOVPE technique. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 161.

Cambel, V., Olejníková, B., Eliáš, P., Kúdela, R., Novák, J., Kučera, M., : Microscopic 2DEG linear Hall probe arrays Superlattice Microstruct. 24 (1998) 181.

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators Solid State Electron. 42 (1998) 263.

Morvic, M., Betko, J., Hasenöhrl, S., Gregušová, D., Cambel, V., Eliáš, P., Novák, J., : On quantum Hall resistance and Shubnikov de Haas effect measurements on InP/InGaAs structures. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 285.

Morvic, M., Betko, J., Novák, J., Kordoš, P., Förster, A., : On the hopping and band conductivity in molecular beam epitaxial low-temperature grown GaAs Physica Status Solidi (b) 205 (1998) 125.

Mareš, J., Krištofik, J., Hubík, P., Hulicius, E., Melichar, K., Pangrác, J., Novák, J., Hasenöhrl, S., : Out-of-plane weak localization in two-dimensional electron structures Phys. Rev. Lett. 80 (1998) 4020.

Eliáš, P., Gregušová, D., Cambel, V., Hasenöhrl, S., Kúdela, R., Hudek, P., Novák, J., : Preparation of microscopic Hall probes and arrays. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 273.

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 203.

Cambel, V., Eliáš, P., Kúdela, R., Novák, J., Olejníková, B., Mozolová, Ž., Majoros, M., Kvitkovič, J., Hudek, P., : Preparation, characterization and application of microscopic Hall probe arrays Solid State Electron. 42 (1998) 247.

Novák, J., Hasenöhrl, S., Cambel, V., Kúdela, R., Kučera, M., : Resistivity anisotropy in ordered InGaP grown at 640C. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 23.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Resistivity anisotrophy in ordered InGaP grown at 640 C Applied Phys. Lett. 73 (1998) 369.

Novák, J., Hasenöhrl, S., Kučera, M., Hjelt, K., Tuomi, T., : Sulphur doping of GaSb grown by atmospheric pressure MOVPE J. Crystal Growth 183 (1998) 69.

Mareš, J., Krištofik, J., Hubík, P., Novák, J., Hasenöhrl, S., : Temperature dependent quasiplateaux of Hall effect in multi-d-layers. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 75.

  • 1997

Novák, J., Kučera, M., Morvic, M., Betko, J., Förster, A., Kordoš, P., : Characterization of low-temperature GaAs by galvanomagnetic and photoluminiscence measurements Mater. Sci Engn. B 44 (1997) 341.

Malacký, L., Kúdela, R., Morvic, M., Novák, J., Wehmann, H., : Properties of silicon-pulse-doped InGaP layers grown by LP- MOCVD Mater. Sci Engn. B 44 (1997) 33.

Kúdela, R., Novák, J., Kučera, M., : Zn-doped InGaP grown by the LP-MOCVD J. Electron. Mater. 25 (1997) 7.

  • 1996

Srnánek, R., Németh, Š., Kováč, J., Kicin, S., Grietens, B., Borghs, G., Novák, J., Šestáková, V., Pekárek, L., : Classification of morphological defects on GaAs/AlAsSb structures prepared by MBE J. Crystal Growth 165 (1996) 156.

Kordoš, P., Betko, J., Morvic, M., Novák, J., Förster, A., : Conductance properties of as-grown and annealed MBE GaAs layers grown at temperatures between 200 and 420oC. In: SIMC ´96. Ed. C. Fontaine. Toulouse: IEEE 1996. P. 37.

Kúdela, R., Vávra, I., Novák, J., Kučera, M., : Dependence of properties of LP MOCVD InGaP layers on growth conditions. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 29.

Betko, J., Morvic, M., Novák, J., Förster, A., Kordoš, P., : Hall mobility analysis in low-temperature-grown molecular beam epitaxial GaAs Applied Phys. Lett. 69 (1996) 2563.

Srnánek, R., Németh, Š., Kováč, J., Šatka, A., Uherek, F., Škriniarová, J., Jakabovič, J., Hotový, I., Kicin, S., Borghs, G., Grietens, B., Novák, J., Šestáková, V., Pekárek, L., Perotin, M., : Characterisation of GaAs/AlAsSb/GaSb heterostructures prepared by MBE In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 181-184.

Novák, J., : Characterization of epitaxial layers using lift-off technique. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 173.

Kováč, J., Uherek, F., Šatka, A., Waclawek, J., Jakabovič, J., Srnánek, R., Rheinländer, B., Gottschalch, V., Hasenöhrl, S., Novák, J., Barna, A., Wood, J., : InAlGaAS-InGaAs-InP RCE PIN Photodiode for 1300nm wavelength region. In: 8th Inter. Conf. Indium Phosphide Related Materials – IPRM ’96. Ed. J.Lorenzo. Piscataway: IEEE 1996. P. 219.

Cambel, V., Eliáš, P., Kúdela, R., Ďurica, M., Novák, J., : Microscopic linear Hall probe arrays Electron. Lett. 32 (1996) 1236.

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum welland superlattice structures for quantum modulators. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 149.

Novák, J., Kučera, M., Lauer, S., Benz, K., : Photoluminiscence characterization of sulphur-doped GaSb grown by liquid phase electroepitaxy J. Crystal Growth 158 (1996) 1-5.

Cambel, V., Eliáš, P., Kúdela, R., Olejníková, B., Novák, J., Ďurica, M., Majoros, M., Kvitkovič, J., Mozolová, Ž., Hudek, P., : Preparation, characterization and application of microscopic linear hall probe arrays. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 153.

Morvic, M., Betko, J., Novák, J., Förster, A., Kordoš, P., : Transport properties of MBE GaAs layers grown at 420 oC. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 197.

Novák, J., Morvic, M., Betko, J., Förster, A., Kordoš, P., : Wet chemical separation of low-temperature GaAs layes from their GaAs substrate Materials Sci Engn. B 40 (1996) 58.

  • 1995

Novák, J., Eliáš, P., : A silicon-InGaAs tandem photodetector for radiation thermometry Measurement Sci Technol. 6 (1995) 1547.

Kordoš, P., Förster, A., Betko, J., Morvic, M., Novák, J., : Semi-insulating GaAs layers grown by molecular-beam epitaxy Applied Phys. Lett. 67 (1995) 983.

  • 1994

Malacký, L., Klobenbrink, R., Zwinge, G., Novák, J., Schlachetzki, A., : InGaAs metal-semiconductor-metal photodetedtor with p+/n-InP barrier enhancement layer, J. Electr. Engn. 45 (1994) 105.

Novák, J., Klaus, M., Benz, K., : Sulphur incorporation in GaSb layers grown by liquid phase electroepitaxy J. Crystal Growth 139 (1994) 206.

  • 1993

Dubecký, F., Novák, J., Kordoš, P., : An efficient and low cost optical excitation system: Application to deep-level spectroscopy Measurement Sci Technol. 4 (1993) 538.

Dubecký, F., Novák, J., Kordoš, P., : An efficient and low cost optical excitation system: application to deep-level spectroscopy, Engn. Optics 1 (1993) 363.

Novák, J., Hasenöhrl, S., Malacký, L., : Large activation of praseodymium in In0.53Ga0.47As Semicond. Sci Technol. 8 (1993) 747.

  • 1992

Novák, J., Eliáš, P., : The InP based photodiodes as sensors for radiation thermometry Proc. SPIE 1712 (1992) 430.

  • 1991

Malacký, L., Novák, J., Mikhailova, M., : Electrical properties of Al/GaInAsSb contacts Physica Status Solidi A 123 (1991) K25.

Novák, J., Hasenöhrl, S., Kuliffayová, M., : Gettering properties of PrO2 in In0.53Ga0.47As LPE growth J. Crystal Growth 110 (1991) 862.

Kuliffayová, M., Novák, J., Hasenöhrl, S., Kacerovský, P., : Growth and properties of the n-type In0.53Ga0.47As LPE layers using rare-earth element oxide, Crystal Propert. Preparation 32-34 (1991) 607.

Kordoš, P., Novák, J., Kayser, O., Heime, K., : Schottky barrier enhancement of /n/ GaInAs with GaInP layer, Phys. Status Solidi A 127 (1991) 25.

Kourkoustas, C., Novák, J., Kuliffayová, M., Papaioannou, G., Kordoš, P., Ioannou-Sougleridis, V., : Transport properties of praseodymium doped p-type In0.53Ga0.47As layers Solid State Comm. 78 (1991) 543.

  • 1990

Novák, J., Malacký, L., : Metal-semiconductor-metal photodetector on p-type In0.53Ga0.47As Electronics Lett. 26 (1990) 704.

Malacký, L., Kordoš, P., Novák, J., : Schottky barrier contacts on /p/ -GaInAs Solid-State Electr. 33 (1990) 273.

Ondrejička, D., Novák, J., : Určenie nespojitosti vodivostného pása Ec v heteropriechode N-In0.53Ga0.47As/N-InP, Elektrotechn. časopis 41 (1990) 193.

  • 1989

Novák, J., Kuliffayová, M., Morvic, M., Kordoš, P., : Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare earth oxides J. Crystal Growth 96 (1989) 645.

Malacký, L., Novák, J., Kordoš, P., : Characterization of InGaAs double Schottky barrier photodetector. In: Inter. Meeting on Advanced Processing and Characterization Technologies APCT 89. Tokyo: Technical Dig. P. 139-142.

Moško, M., Novák, J., : Monte Carlo study of real space electron transfer. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 107.

Hasenöhrl, S., Novák, J., : Nízkoteplotná difúzia Zn do InO.53Ga0.47As, Elektrotechn. časopis 40 (1989) 251.

Morvic, M., Novák, J., Kúdela, R., Malacký, L., : Planar detector-construction and properties. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 319.

Kuliffayová, M., Novák, J., Morvic, M., Hasenöhrl, S., : Preparation of the undoped InGaAs/InP LPE layers, Crystal Propert. Preparation 19-20 (1989) 227.

Malacký, L., Novák, J., : Schottky barrier height of metal-/p/Ga0.47In0.53As diodes. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 295.

Malacký, L., Novák, J., : Výška Schotkyho bariéry Au/p/Ga0.47In0.53As, Elektrotechn. časopis 40 (1989) 687.

Hasenöhrl, S., Novák, J., Morvic, M., : Zn difussion in GaInAs, Crystal Proper. Preparation 19-20 (1989) 235.

  • 1988

Morvic, M., Malacký, L., Cambel, V., Novák, J., Kordoš, P., : Základné vlastnosti polohovocitlivých fotodetektorov, Slaboproudý obzor 49 (1988) 312.

Malacký, L., Morvic, M., Cambel, V., Novák, J., : Základné vlastnosti dvojsúradnicových polohovocitlivých fotodetektorov. In: Fotonika ’88. Bratislava: ČSVTS pri ČSMU 1988. S. 86.

  • 1987

Novák, J., Malacký, L., Morvic, M., Kordoš, P., : Dependence of InGaAs photodiode characteristics on the composition of the ternary, Crystal Propert. Preparation 12 (1987) 307.

Morvic, M., Malacký, L., Cambel, V., Novák, J., Kordoš, P., : Niektoré parametre polohovocitlivých detektorov. In: Senzory a senzorové systémy. Ed. J.Felix. Košice: Dom ČSVTS 1987. S.111.

Malacký, L., Novák, J., Kordoš, P., : Study of dark current in Ga1-xInxAs/GaAs diodes, Crystal Propert. Preparation 12 (1987) 303.

  • 1985

Novák, J., Morvic, M., Kordoš, P., Stejskal, J., Zoul, A., : Fotodetekčné prvky pre pásmo 1 – 1,6µ na báze GaInAs. In: Elektronické a optoelektronické senzory. Bratislava: ElÚ SAV 1985. S. 112.

Morvic, M., Novák, J., Kordoš, P., : Fotodetektory GaInAs/InP pre pásmo 1,3-1,5µ. In: 6. konf. GaAs. České Budějovice: ČSVTS 1985. S. 107.

Novák, J., Morvic, M., Malacký, L., : Vplyv zloženia InxGa1-xAs na vlastnosti fotodiod. In: 6. konf. GaAs. České Budějovice: ČSVTS 1985. S. 106.

  • 1984

Morvic, M., Štofanik, F., Novák, J., Kordoš, P., : Fotodetektory pre optickú komunikáciu v rozsahu 1,3µm. In: Optické komunikácie 84. Praha: ČSVTS 1984. S. 98.

Novák, J., Kúdela, R., Morvic, M., : Fototranzistor pre pásma 1,0-1,2µm. In: Optické komunikácie 84. Praha: ČSVTS 1984. S. 73.

Kordoš, P., Novák, J., Alakša, S., : Photodetectors for optical communication system (in Slovak), Slaboproudý obzor 45 (1984) 218.

  • 1983

Novák, J., Morvic, M., : Application of the GaAs diodes in op tical coupling elements (in Slovak), Slaboproudý obzor 44 (1983) 334.

Kordoš, P., Benč, V., Morvic, M., Novák, J., : Niektoré vlastnosti fotodiod GaInAs/InP, Elektrotechn. časopis 34 (1983) 708.

Dubecký, F., Novák, J., Kordoš, P., : Observation of deep traps in LPE(p)AlGaAs-(n)GaAs heterojunctions for avalanche photodiode applications. In: 4th Int. Conf. Deep Level Impurities in Semicond. Eger 1983. P. 90.

  • 1982

Kordoš, P., Morvic, M., Benč, V., Novák, J., : Epitaxné vrstvy Ga1-xInxAs pre fotoelektrické aplikácie, Elektrotechn. časopis 33 (1982) 29.

Novák, J., Morvic, M., Kordoš, P., : High gain (p) AlGaAs-(n) GaAs heterojunction avalanele photodiodes Solid-State Electr. 25 (1982) 82.

Morvic, M., Benč, V., Novák, J., Kordoš, P., : Príprava a vlastnosti fotodiodových štruktúr GaInAs/InP. In: 5. čs. konf. o GaAs. Bratislava: ElÚ SAV 1982. S. 201.

Novák, J., Morvic, M., Štofanik, F., : Vplyv mriežkových porúch na vlastnosti fotodiod. In: 5. čs. konf. o GaAs. Bratislava: ElÚ SAV 1982. S. 144.

Novák, J., Morvic, M., Kordoš, P., : Vyšetrovanie detekčných prvkov pomocou riadkovania laserového lúča. In: Optické komunikácie 82. Praha: ČSVTS 1982. S. 47.

  • 1981

Morvic, M., Novák, J., Štofanik, F., Lajda, J., : Mapovanie citlivosti fotodiod pomocou zariadenia na riadkovanie laserového lúča, Elektrotechn. časopis 32 (1981) 920.

  • 1980

Kordoš, P., Novák, J., Morvic, M., Benč, V., : GaAs based optoelectronic coupling element (in Slovak), Electrotechn. časopis 31 (1980) 731.

Kordoš, P., Morvic, M., Benč, V., Novák, J., Kúdela, R., Šafránková, J., : Príprava a vlastnosti epitaxných vrstiev Ga1-xInxAs na substrátoch GaAs, Elektrotechn. časopis 31 (1980) 427-429.

  • 1979

Novák, J., Kordoš, P., Morvic, M., : GaAs Photodiodes (in Slovak), Electrotechn. časopis 30 (1979) 382.

Novák, J., : Lavínové fotodiody heteropriechodom GaAs/GaAlAs. In: 4. čs. konf. o GaAs. Praha: ČSVTS 1979. S. 72.