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Šichman, P., Stoklas, R., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., Hashizume, T., Chvála, A., Šatka, A., and Kuzmík, J.: Vertical GaN transistor with semi-insulating channel, Physica Status Solidi (a) 220 (2023) SI2200776.

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Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

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Gregušová, D., Dobročka, E., Eliáš, P., Stoklas, R., Blaho, M., Pohorelec, O., Haščík, Š., Kučera, M., and Kúdela, R.: GaAs nanomembranes in the high electron mobility transistor technology, Materials 14 (2021) 3461.

1. Tian, W.W.: J. Phys.-Cond. Matt. 36 (2024) 345003.

Mikulics, M., Kordoš, P., Gregušová, D., Gaži, Š., Novák, J., Sofer, Z., Mayer, J., and Hardtdegen, H.: Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer, Semicond. Sci Technol. 36 (2021) 095040.

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Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St., Moers, J., Mayer, J., and Hardtdegen, H.: Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement, Applied Phys. Lett. 118 (2021) 043101.

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Asubar, J.T., Yatabe, Z., Gregušová, D., and Hashizume, T.: Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation, J. Applied Phys. 129 (2021) 121102.

1. Shi, W.: IEEE Trans. Electron Dev. 68 (2021) 4274.
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Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

1. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

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Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Šatka, A., Blaho, M., Gregušová, D., and Kuzmík, J.: Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs, J. Circuits, Systems Computers 28 (2019) 1940009.

     1. Lv, Z.: IEICE Electron. Express 18 (2021) 20.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.

Brytavskyi, I., Hušeková, K., Myndrul, V., Pavlenko, M., Coy, E., Zaleski, K., Gregušová, D., Yate, L., Smyntyna, V., and Iatsunskyi, I.: Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers, Applied Surface Sci 471 (2019) 686-693.

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Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

1. Sa, Z.X.: Adv. Functional Mater. 33 (2023) Iss. 38.

Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 22nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

#       1. Saglam, B.: IEEE Energy Conv. Congress & Exposition – ECCE 2022, pp. 1-6.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

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Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144.

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Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations, IEEE Trans. Electron Devices 65 (2018) 2666-2669.

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Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Vilhan, M., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Simulation analysis of InAlN/GaN monolithic NAND logic cell. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 167-171.

1. Ding, Y.: Applied Sci-Basel 9 (2019) 5196.
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Graff, A., Simon-Najasek, M., Altmann, F., Kuzmík, J., Gregušová, D., Haščík, Š., Jung, J., Baur, T., Grunenputt, J., and Blanck, H.: High resolution physical analysis of ohmic contact formation at GaN-HEMT devices, Microelectr. Reliab. 76-77 (2017)  338.

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Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.

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Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., and Georgakilas, A.: Current conduction mechanism and electrical break-down in InN grown on GaN, Applied Phys. Lett. 110 (2017) 232103.

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Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

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Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B., and Kuzmík, J.: Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density, J. Vacuum Sci Technol. B 35 (2017) 01A107.

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Blaho, M., Gregušová, D.,  Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., and Kuzmík, J.: Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs, Applied Phys. Lett. 111 (2017) 033506.

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Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., and Kuzmík, J.: Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

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Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

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