Mgr. Laurenčíková Agáta, PhD.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J.jr., and Kováč, J.: Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode, AIP Adv. 12 (2022) 065004.

1. Late, D.: AIP Adv. 12 (2022) 110401.

Škriniarová, J., Hronec, P., Chlpík, J., Laurenčíková, A., Kováč, J.jr., Novák, J., and Andok, R.: Investigation of volume fraction of GaP nanowires by SEM characterization and spectroscopic ellipsometry, Optik 234 (2021) 166572.

1. Zhao, R.N.: J. Nanopart. Res. 23 (2021) 269.
2. Yao, Z.H.: Inter. J. Fatigue 165 (2022) 107179.

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Kováč, J.jr., Urbancová, P., and Pudiš, D.: Twinned nanoparticle structures for surface enhanced Raman scattering, Applied Surface Sci 528 (2020) 146548.

1. Dumiszewska, E.: Crystals 13 (2023) 1539.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

1. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

1. Andreev, B.A.: Semiconductors 53 (2019) 1357.
2. Cross, G. B.: J. Crystal Growth 536 (2020) 125574.
3. Wang, S.: Coatings 10 (2020) 1185.
4. Damas, G.B.: Applied Surface Sci 592 (2022) 153290.
#    5. Cao, B.: Adv. Function. Mater. 32 (2022) 2110715.

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

1. Zeng, Y.: Applied Surface Sci 544 (2021) 148924.
2. Liu, Y.: Mater. Horizons ‏ 8 (2021)‏ 370.
3. Ge, K.: Sensors Actuators B 361 (2022) 131734.
4. Ge, K.: Analyt. Bioanalyt. Chem. 414 (2022) 2385.
5. Lee, J.Y.: J. Korean Phys. Soc 82 (2023) 473.
6. Dumiszewska, E.: Crystals 13 (2023) 1539.

Lettrichová, I., Pudiš, D., Gaso, P., Jandura, D., Kováč, J.jr., Laurenčíková, A., Novák, J., and Goraus, M.: Polymer-based 3D microcones for application in SERS, Proc. SPIE 10976 (2018) 109760V.

1. Kim, J.A.: Adv. Optical Mater.‏ 8 (2020) 1901934.
#    2. Kim, J.A.: Progress in Biomed. Engn. 2 (2020) 042001.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on 3D surfaces by interference lithography for SERS, Applied Surface Sci 461 (2018) 171-174.

1. Hofmann, M.: J. Vacuum Sci Technol. B 37 (2019) 061803.
2. Chen, L.S.: Acta Optica Sinica 41 (2021) 0823018.
3. Pangpaiboon, N.: J. Metals Mater. Minerals 31 (2021) 33.
#     4. Lu, C.: Guangxue Jingmi Gongcheng/Optics Precision Engn. 30 (2022) 1836.
5. Roa, S.: Surfac. Interfac. 39 (2023) 102948.
6. Nie, C.H.: J. Pharmaceut. Anal. 13 (2023) 1429.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

1. Rajkumar, C.: Results in Phys. 15 (2019) 102647.
2. Rajkumar, C.: Vacuum 168 (2019) UNSP 108856.
3. Chen, Y.: Adv. Mater. 32 (2021) 2001668.
4. Dumiszewska, E.: Crystals 13 (2023) 1539.

Ďurišová, J., Pudiš, D., Laurenčíková, A., Novák, J., and Šušlik, Ľ.: Reflectance suppression of ZnO coated GaP nanowires, Thin Solid Films 640 (2017) 88–92.

1. Tripathi, S.: Mapan-J. Metrol. Soc India 36 (2021) 97.
2. Vazinishayan, A.: Optik 234 (2021) 166545.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., and Kováč, J.:Methanol sensor for integration with GaP nanowire photocathode, Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

#       1. Zhao, T.: Lecture Notes in Electr. Engn. 567 (2020) 264.

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Wurfl, J., and Kuzmík, J.: Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs, Physica Status Solidi a 214 (2017) 1700407.

1. Tokuda, H.: Japan. J. Applied Phys. 59 (2020) 084002.
2. Tapajna, M.: Crystals 10 (2020) 1153.
3. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.
4. Li, J.L.: Superlatt. Microst. 161 (2022) 107064.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gaso, P., Šušlik, Ľ., Jandura, D., Ďurišová, J., and Novák, J.: Optical properties of GaAs-based LED with Fresnel structure in the surface, Proc. SPIE 10142 (2016) 101421P.

1. Chen, D.: Macromolecul. Rapid Comm. 42 (2021) 2000462.

Pudiš, D., Škriniarová, J., Lettrichová, I., Laurenčíková, A., Benčurová, A., Kováč, J., and Novák, J.: Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning, Proc. SPIE 9441 (2014) 94410P.

1. Suslik, L.: In 13th Inter. Conf. Elektro – ELEKTRO 2020.

Novák, J., Laurenčíková, A., Vávra, I., Hasenöhrl, S., and Reiffers, M.: Magnetic properties of InMnAs nanodots prepared by MOVPE, J. Magnetism Magnetic Mater. 327 (2013) 20-23.

1. Bouravleuv, A. D.: Nanotechnol. 27 (2016) 425706.
2. Bouravleuva, A.: J. Crystal Growth 468 (2017) 680.
3. Kodaira, R.: J. Crystal Growth 507 (2019) 241.
#     4. Sanygin, V.P.: Kondensir. Sredy Mezhfaznye Granitsy 23 (2021) 413.
5. Muneta, I.: Sci Rep 12 (2022) 17199.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., and Novák, J.:Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

1. Vidu, R.: Frontiers in Systems Neurosci 8 (2014) 91.
#     2. Opris, I.: In Recent advances on the modular organization of the cortex. Springer 2015 ISBN: 978-94-017-9899-0. P. 339.
3. Jahromi, K.E.: IEEE Electron Device Lett. 37 (2016) 43.
4. Pampaloni, N.P.: Front. Neurosci 12 (2019) 953.

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., and Mikulics, M.: Structural and optical properties of individual GaP/ZnO core-shell nanowires, Vacuum 98 (2013) 106-110.

1. Chee, C.Y.: Ceramics Inter. 40 (2014) 9997.
2. Karunakaran, C.: Powder Technol. 254 (2014) 480.

Chromik, Š., Štrbík, V., Dobročka, E., Dujavová, A., Reiffers, M., Liday, J., and Španková, M.: Significant increasing of onset temperature of FM transition in LSMO thin films, Applied Surface Sci 269 (2013) 98-101.

  1. Pei, H.: ACS Applied Mater. Interfaces 10 (2018) 30895.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., and Novák, J.: Zinc-doped gallium phosphide nanowires for photovoltaic structures, Applied Surface Sci 269 (2013) 72-76.

1. Chandiramouli, R.: Mater. Sci Engn. B 194 (2015) 55.
2. Lee, S.: ACS Applied Mater. & Interfaces 8 (2016) 16178.
3. Horley, P.: Physica E 83 (2016) 227.
4. Chen, J.-Y.: CRYSTENGCOMM 19 (2017) 975.
5. Mohammad, R.: Inter. J. Modern Phys. C 28 (2017) Iss. 3.
6. Kim, D.-H.: J. Electronic Mater. 46 (2017) 4750.
7. Sharov, V.: Scripta Materialia 248 (2024) 116128.
8. Singh, N.P.: Solid State Comm. 390 (2024) 115593.

Woch, W.M., Dujavová, A., Przewoznik, J., Zalecki, R., Kolodziejczyk, A., Sojková, M., and Chromik, Š.: Magnetization, susceptibility and critical currents of (Tl2-xRex)Ba2CaCu2Oy thin films, Acta Phys. Polonica A 121 (2012) 845-849.

#       1. Kong, W.: Solid State Phenom. 290 (2019) 227.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., and Mikulics, M.: Electrical and photoluminescence properties of individual GaP nanowires doped by zinc, Phys. Status Solidi a 209 (2012) 2505-2509.

1. Jiang, H.-B.: Chinese Sci Bull. 59 (2014) SI2135.
2. Wallentin, J.: Nano Lett. 14 (2014) 1707.
3. Tomioka, K.: J. Phys. D 47 (2014) SI394001.
4. Liao, G.: Sci Rep. 6 (2016) 28240.

Truchly, M., Plecenik, T., Krško, O., Gregor, M., Satrapinskyy, L., Roch, T., Grančič, B., Mikula, M.,Laurenčíková, A., Chromik, Š., Kúš, P., and Plecenik, A.: Studies of YBa2Cu3O6+x degradation and surface conductivity properties by scanning spreading resistance microscopy, Physica C 483 (2012) 61-66.

1. Vilimova, P.: Polymer Testing 52 (2016) 46.
2. Zhong, J.: RSC Adv. 6 (2016) 1103.
3. Il’in, A. I.: Phys. Solid State 62 (2020) 1725.
4. Choi, E.-M.: Nanoscale 12 (2020) 3157.
5. Sander, A.: Sci Rep. 11 (2021) 20788.

Štrbik, V., Beňačka, Š., Gaži, Š., Šmatko, V., Chromik, Š., Laurenčíková, A., and Vávra, I.: Effect of gallium focused ion beam irradiation on properties of YBa2Cu3Ox/La0,67Sr0,33MnO3 heterostructures, J. Electr. Engn. 62 (2011) 109-113.

1. Cui, A.: Sci Rep 3 (2013) 2429.
2. Popovic, Z.: J. Phys. Soc Japan 82 (2013) 114714.
3. Popovic, Z.: Europ. Phys. J. Plus 138 (2023) 767.

Laurenčíková, A., Sojková, M., Chromik, Š., Štrbik, V., and Kostič, I.: Tl-based patterned superconducting structures: fabrication and study, Supercond. Sci Technol. 23 (2010) 045007.

 1. Narasimhachar, V.: Nature Comm. 6 (2015) 7689.
#    2. Chen, M.: Key Engn. Mater. 773 (2018) 162.
3. Qin, B.Y.: Sustainab. Energy Technol. Assessments 69 (2024) 103925.

Laurenčíková, A., Sojková, M., Štrbik, V., Matkovičová, Z., Plesch, G., and Kostič, I.: Influence of the reaction conditions on the formation of Tl(Re)-Ba-Ca-Cu-O superconducting thin films by thallination in open system, Central European J. Phys. 5 (2007) 229-235.

   1. Chen, Y.F.: Supercond. Sci Technol. 21 (2008) 085005.

Matkovičová, Z., Štrbik, V., Plesch, G., Sojková, M., and Laurenčíková, A.: Tl-based superconducting films prepared by aerosol spray deposition and thallinated in an open system, Central European J. Phys. 5 (2007) 398-404.

1. Kalubarme, R.S.: J. Alloys Compounds 479 (2009) 732.
2. Kalubarme, R.S.: J. Supercond. Novel Magnetism 23 (2010) 1313.
3. Liang, X.L.: Ceram. Inter. 49 (2023) 15665.