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Gál, N., Hrubčín, L., Šagátová, A., Vanko, G., Kováčová, E., and Zaťko, B.: High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C, Applied Surface Sci 635 (2023) 157708.
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Kočí, M., Izsák, T., Vanko, G., Sojková, M., Hrdá, J., Szabó, O., Husák, M., Végsö, K., Varga, M., and Kromka, A.: Improved gas sensing capabilities of MoS2/diamond heterostructures at room temperature, ACS Applied Mater. Interfaces 15 (2023) 34206-34214.
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Hudec, B., Vanko, G., Precner, M., Dobročka, E., Seifertová, A., Fedor, J., Tóbik, J., and Fröhlich, K.: Piezoelectric thin film pressure sensor made by atomic layer deposition of 002-oriented ZnO on Si3N4 membrane. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 199-202.
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Kundrata, I., Barr, M.K.S., Tymek, S., Döhler, D., Hudec, B., Brüner, P., Vanko, G., Precner, M., Yokosawa, T., Spiecker, E., Plakhotnyuk, M., Fröhlich, K., and Bachmann, J.: Additive manufacturing in atomic layer processing mode, Small Methods (2022) 2101546.
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Izsák, T., Vanko, G., Babchenko, O., Vincze, A., Vojs, M., Zaťko, B., and Kromka, A.: Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements, Mater. Sci Engn. B 273 (2021) 115434.
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Rýger, I., Lobotka, P., Steiger, A., Chromik, Š., Lalinský, T., Raida, Z., Pítra, K., Zehetner, J., Španková, M., Gaži, Š., Sojková, M., and Vanko, G.: Uncooled antenna-coupled microbolometer for detection of terahertz radiation, J. Infrared, Millimet., Terahertz Waves 42 (2021) 462–478.
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Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E., Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond, Sci Rep. 9 (2019) 2001.
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Zehetner, J., Kasemann, S., Vanko, G., and Babchenko, O.: Black titanium dioxide in situ generated on femtosecond laser induced periodic surface structures. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 203-206.
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Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206.
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Babchenko, O., Vanko, G., Gerboc, M., Ižák, T., Vojs, M., Lalinský, T., and Kromka, A.: Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C, Diamond Related Mater. 89 (2018) 266-272.
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Zehetner, J., Vanko, G., Dzuba, J., and Lalinský, T.: Femtosecond laser processing of membranes for sensor devices on different bulk materials, Adv. Electr. Electron. Engn. 15 (2017) 561-568.
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Osvald, J., Vanko, G., Chow, L., Chen, N.C., and Chang, L.B.: Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas, Microelectron. Reliab. 78 (2017) 243–248.
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Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., and Lobotka, P.: Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane, Sensors Actuators A 265 (2017) 321–328.
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Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., and Mudroň, J.: A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization, Applied Surface Sci 395 (2017) 131-135.
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Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., and Vanko, G.: Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment, Applied Surface Sci 395 (2017) 92-97.
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Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., and Lalinský, T.: Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors, Microsyst. Technol. 22 (2016) 1883-1892.
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Zehetner, J., Vanko, G., Dzuba, J., and Lalinský, T.: Nanostructuring of bulk Si and SiC substrates by femtosecond laser ablation for membrane fabrication and surgace functionalization. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 223-226.
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Ižák, T., Jirásek, V., Vanko, G., Dzuba, J., and Kromka, A.: Temperature-dependent stress in diamond-coatewd AlGaN/GaN heterostructures, Mater. & Design 106 (2016) 305-312.
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Dzuba, J., Vanko, G., Vojs, M., Rýger, I., Ižák, T., Jirásek, V., Kutiš, V., and Lalinský, T.: Finite element analysis of AlGaN/GaN micro-diaphragms with diamond, Proc. SPIE 9517 (2015) 95171I.
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Vanko, G., Dzuba, J., Rýger, I., Vallo, M., and Lalinský, T.: MEMS pressure sensor with an AlGaN/GaN based high electron mobility transistor. In: NSTI: Advanced Materials – TechConnect Briefs 2015. Eds. B. Romanowicz, M. Laudon. Taylor and Francis: 2015. ISBN: 978-149874730-1. P. 290-293.
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Ižák, T., Babchenko, O., Jirásek, V., Vanko, G., Vojs, M., and Kromka, A.: Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface, Mater. Sci Forum 821-823 (2015) 982-985.
# 1. Francis, D.: Thermal Management of Gallium Nitride Electronics. Elsevier 2022, pp. 295-231. ISBN: 978-0-12-821084-0.
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Zehetner, J., Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Benkler, M., and Lucki, M.: Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions, Proc. SPIE 9517 (2015) 951721.
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