Elektrotechnický ústav SAV, v.v.i.

Stoklas, R., Hasenőhrl, S., Dobročka, E., Gucmann, F., and Kuzmík, J.: Electron transport properties in thin InN layers grown on InAlN, Mater. Sci Semicond. Process. 155 (2023) 107250.

1. He, Z.: Vacuum 220 (2024) 112833.

Šichman, P., Stoklas, R., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., Hashizume, T., Chvála, A., Šatka, A., and Kuzmík, J.: Vertical GaN transistor with semi-insulating channel, Physica Status Solidi (a) 220 (2023) SI2200776.

1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.

Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

1. Damas, G.B.: J. Chem. Phys. 158 (2023) 174313.
2. Loo, C.C.: Mater. Character. 205 (2023) 113279.
3. Enayati, H.: Crystals 14 (2024) 105.

Stoklas, R., Chvála, A., Šichman, P., Hasenöhrl, S., Haščík, Š., Priesol, J., Šatka, A., and Kuzmík, J.: Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels, IEEE Trans. Electron Dev. 68 (2021) 2365.

1. Kim, H.: J. Electron. Mater. 50 (2021) 6688.
2. Qin, Y.: J. Phys. D 56 (2023) 093001.
3. Liu, B.: Inter. J. Numeric. Modell.-Electron. Networks Dev. Fields 37 (2024) Iss. 2.

Chauhan, P., Hasenöhrl, S., Vančo, Ľ., Šiffalovič, P., Dobročka, E., Machajdík, D., Rosová, A., Gucmann, F., Kováč, J.jr., Maťko, I., Kuball, M., and Kuzmík, J.: A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation, CrystEngComm 22 (2020) 130-141.

1. Chen, W.C.: Surface Topography-Metrol. Propert. 11 (2023) 024002.

Adikimenakis, A., Chatzopoulou, P., Dimitrakopulos, G. P., Kehagias, Th., Tsagaraki, K., Androulidaki, M., Doundoulakis, G., Kuzmík, J., and Georgakilas, A.: Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE, ECS J. Solid State Sci Technol. 9 (2020) 015006.

1. Wang, S.: Coatings 10 (2020) 1185.
2. Pérez-Caro, M. .: J. Applied Phys. 128 (2020) 215304.
3. Lai, F.I.: Catalysts 11 (2021) 886.
4. Kudryavtsev, K.E.: ECS J. Solid State Sci Technol. 11 (2022) 014003.
5. Sakakita, H.: Applied Mater. Today 27 (2022) 101489.
6. Feng, Z.C.: J. Vacuum Sci Technol. A 41 (2023) 053401.
7. Loo, C.C.: Mater. Character. 205 (2023) 113279.

Chauhan, P., Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., and Kuzmík, J.: Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer, Applied Surface Sci 502 (2020) 144086.

1. Chen, L.: Crystal Growth Design 21 (2021) 2911.
2. Shih, H.J.: J. Alloys Comp. 890 (2022) 161797.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.
3. Qin, Y.: J. Phys. D 56 (2023) 093001.
4. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Hasenöhrl, S., Dobročka, E., Stoklas, R., Gucmann, F., Rosová, A., and Kuzmík, J.: Growth and Properties of N-polar InN/InAlN Heterostructures, Phys. Status Solidi A 217 (2020) 2000197.

1. Li, Y.Z.: Semicond. Sci Technol. 39 (2024) 075005.

1. Wang, S.: Coatings 10 (2020) 1185.
2. Pérez-Caro, M. .: J. Applied Phys. 128 (2020) 215304.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

1. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process. 91 (2019) 356-361.

1. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.
2. Kim, H.: IEEE Access 10 (2022) 68724.
3. Hsieh, H.J.: Mater. Sci Semicond. Process. 169 (2024) 107908.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo, Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík J.: Effect of temperature and carrier gas on the properties of thick In_xAl_1-xN layer, Applied Surface Sci 470 (2019) 1-7.

1. Bangolla, H.K.: Nanoscale Adv. 4 (2022) 4886.
# 2. He, X.: Huagong Xuebao/CIESC J. 74 (2023) 2800.
3. Yue, Z.: J. Alloys Comp. 1001 (2024) 175193.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Šatka, A., Blaho, M., Gregušová, D., and Kuzmík, J.: Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs, J. Circuits, Systems Computers 28 (2019) 1940009.

1. Lv, Z.: IEICE Electron. Express 18 (2021) 20.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

1. Andreev, B.A.: Semiconductors 53 (2019) 1357.
2. Cross, G. B.: J. Crystal Growth 536 (2020) 125574.
3. Wang, S.: Coatings 10 (2020) 1185.
4. Damas, G.B.: Applied Surface Sci 592 (2022) 153290.
# 5. Cao, B.: Adv. Function. Mater. 32 (2022) 2110715.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

1. Murugapandiyan, P.: J. Electronic Mater. ‏49 (2020) SI524.

1. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

1. Biswas, D.: J. Applied Phys. 125 (2019) 225707.
2. Toprak, A.: Mater. Res. Express 8 (2021) 126302.
# 3. Wang, X.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 42 (2022) 151.

Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 22^nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

# 1. Saglam, B.: IEEE Energy Conv. Congress & Exposition – ECCE 2022, pp. 1-6.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A 215 (2018) 1800090.

1. Song, K.: J. Phys. D 53 (2020) 345107.
2. Shi, Y.: IEEE Trans. Electron Dev. 67 (2020) 2290.
3. Duong D.N.: J. Applied Phys. 127 (2020) 094501.
4. Kaushik, P.K.: Nanoscale Res. Lett. 16 (2021) 159.

Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144.

1. Senevirathna, M.K.I.: J. Vacuum Sci Technol. B 38 (2020) 044002.
2. Hajek, F.: J. Lumin. 236 (2021) 118127.
3. Lagzdina, E.: Nuclear Instrum. Methods Phys. Res. B 538 (2023) 218.

Matys, M., Nishiguchi, K., Adamowicz, J.B., Kuzmík, J., and Hashizume, T.: Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors, J. Applied Phys. 124 (2018) 224502.

1. Mazumder, S.: Semicond. Sci Technol. 36 (2021) 095003.
2. Son, D.H.: Solid-State Electr. 184 (2021) 108079.
3. Glinkowski, M.: Acta Phys. Polonica A 140 (2021) 192.
4. Wang, A.S.: Semicond. Sci Technol. 38 (2023) 035022.
5. Dong, Q.Y.: IEEE Trans. Electron Dev. 71 (2024) 1798.
6. Chen, Y.L.: IEEE Trans. Electron Dev. 71 (2024) 1448.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂ gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

1. Ber, E.: IEEE Trans. Electron Dev. 66 (2019) 2100.
2. Zhang, X.-Y.: Nanoscale Res. Lett. 14 (2019) 83.
3. Liu, M.: Chinese Phys. B 29 (‏ 127101(2020.
4. Akkaya, A.: Mater. Today-Proc. 46 (2021) 6939.
5. Mohanty, S.: Applied Phys. Lett. 119 (2021) 042901.
6. Cheng, W.C.: J. Vacuum Sci Technol. B 40 (2022) 022212.
7. Shen, C.X.: Adv. Sci 9 (2022) 2104599.
8. Zhu, X.F.: J. Europ. Ceram. Soc 43 (2023) 4349.
9. Wu, N.T.: Semicond. Sci Technol. 38 (2023) 063002.
10. Wang, B.X.: J. Vacuum Sci Technol. A 42 (2024) 012401.
11. Long, P.X.: Nanotechnol. 35 (2024) 025204.
12. Lee, G.: Electronics 13 (2024) 2783.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations, IEEE Trans. Electron Devices 65 (2018) 2666-2669.

1. Guan, H.: Coatings 9 (2019) 318.
2. Liao, B.: Electronics 8 (2019) 406.
3. Hwang, I.-T.: Applied Sci-Basel 9 (2019) 3610.
4. Lv, Z.: IEICE Electron. Express 18 (2021) 20.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Vilhan, M., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Simulation analysis of InAlN/GaN monolithic NAND logic cell. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 167-171.

1. Ding, Y.: Applied Sci-Basel 9 (2019) 5196.
2. Palacios Rodriguez, S.: Revista De La Construc. 18 (2019) 398.
3. Gralow, M.: J. Laser Appl.‏ 32 (2020) 021201.
4. Gmeiner, F.: ACM Proc. Chi Conf. Human Factors in Comput. Systems 2023.

Hashizume, T., Nishiguchi, K., Kaneki, S., Kuzmik, J., and Yatabe, Z.: State of the art on gate insulation and surface passivation for GaN-based power HEMTs, Mater. Sci in Semicond. Process. 78 (2018) 85-95.

1. Hentschel, R.: J. Crystal Growth 500 (2018) 1.
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8. Roccaforte, F.: Proc. Inter. Semicond. Conf. – CAS 2018, pp. 7-16.
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13. Hartmann, J.: Phys. Status Solidi B 256 (2019) SI1800477.
14. Lin, Y.-S.: IEICE Electron. Express 16 (2019) 20181046.
15. Gulseren, M.E.: Mater. Research Express 6 (2019) 095052.
16. Sabaghi, M.: HOLOS 35 (2019) UNSP e8192.
17. Kumar, S.: ACS Applied Electron. Mater. 1 (2019) 340.
18. Hosoi, T.: Japan. J. Applied Phys. 58 (2018) C SCCD16.
19. Nozaki, M.: Japan. J. Applied Phys. 58 (2018) C SCCD08.
20. Ajayan, J.: Microelectron. J. 92 (2019) 104604.
21. Hwang, I.-T.: Applied Sci-Basel 9 (2019) 3610.
22. Kumar, S.: J. Theoret. Applied Phys. 13 (2019) 299.
23. Susanto, I.: Applied Surface Sci 496 (2019) UNSP 143616.
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27. Uedono, A.: J. Applied Phys. 127 (2020) 054503.
28. Choi, U.: Phys. Status Solidi A 217 (2020) SI1900695.
29. Heuken, L.: Phys. Status Solidi A 217 (2020) SI1900697.
30. Zhang, Y.: IEEE Trans. Electron Dev. 67 (2020) 3960.
31. Zhao, Yao-P.: Chinese Phys. B 29 (2020) 087304.
32. Kotani, J.: J. Applied Phys. 127 (2020) Iss.‏ 23.
33. Khrapovitskaya, Yu. V.: Nanotechnol. in Russia 15 (2020) 169.
34. Matys, M.: AIP Adv.‏ 10 (2020) 105232.
35. Schiliro, E.: AIP Adv.‏ 10 (2020) 125017.
36. Tapajna, M.: Crystals 10 (2020) 1153.
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38. Lin, C.-Y.: IEEE Inter. Integrated Reliab. Workshop Final Rep. Vol. 2020, (2020) Art. no. 9312857.
39. Calzolaro, A.: Phys. Status Solidi A 218 (2021) 2000585.
40. He, J.Q.: Adv. Electron. Mater. 7 (2021) 2001045.
41. Matys, M.: Applied Phys. Lett. 118 (2021) 093502.
42. Laukkanen, P.: Applied Phys. Rev. 8 (2021) 011309.
43. Zhang, Y.H.: Semicond. Sci Technol. 36 (2021) 054001.
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45. Susanto, I.: Nanomater. 11 (2021) 1406.
46. Gupta, S.D.: J. Applied Phys. 130 (2021) 015701.
47. Turut, A.: J. Mater. Sci-Mater. Electron. 32 (2021) 22680.
48. Mikulics, M.: Semicond. Sci Technol. 36 (2021) 095040.
49. Nela, L.: IEEE J. Electron Dev. Soc 9 (2021) 1066.
50. Viswanathan, S.: Inter. J. Numer. Modell.-Electron. Networks Dev. Fields 35 (2022) 2936.
51. Fiorenza, P.: Applied Surface Sci 579 (2022) 152136.
52. Baby, R.: Semicond. Sci Technol. 37 (2022) 035005.
53. Ofiare, A.: Inter. J. Nanoelectron. Mater. 14 (2021) 29.
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55. Ye, R.: IEEE Access 10 (2022) 21759.
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58. Calzolaro, A.: Materials 15 (2022) 791.
59. Zhang, X.D.: Electronics 11(2022) 895.
60. Nela, L.: IEEE Trans. Electron Dev. 69 (2022) 1798.
61. Susanto, I.: Surface Coat. Technol. 434 (2022) 128199.
62. Ozaki, S.: Applied Phys. Express 15 (2022) 041001.
63. Zhao, Y.: Mater. Sci Semicond. Process. 143 (2022) 106535.
64. Cheng, C.A.: Mater. Sci Semicond. Process. 147 (2022) 106667.
65. Islam, N.: Crystals 12 (2022) 1581.
66. Wang, F.: IEEE Trans. Electron Dev. 69 (2022) 6485.
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68. Cheng, J.: AIP Adv. 12 (2022) 075123.
69. Haziq, M.: Micromach. 13 (2022) 2133.
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#          71. Vamsi, B.S.: Intelligent Green Technol. for Sustainable Smart Cities.
Scrivener Publ. LLC 2022, pp. 247-267. ISBN: 978-111-981-606-5.
#          72. Liang, Y.: IEEE 16^th Inter. Conf. Solid-State Integrated Circuit Technol. – ICSICT 2022.
#          73. Elangovan, S.: Proc. Inter. Symp. Phys. Failure Anal. Integrated Circuits – IPFA 2022.
74. Ozaki, S.: Japan. J. Applied Phys. 62 (2023) SC1033.
75. Deng, K.: Applied Surface Sci 638 (2023) 158000.
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79. Karmakar, C.: Applied Phys. Lett. 122 (2023) 201601
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81. Ding, X.: Mater. Sci Semicond. Process. 162 (2023) 107502.
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Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Wurfl, J., and Kuzmík, J.: Polarization-engineered n⁺GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs, Physica Status Solidi a 214 (2017) 1700407.

1. Tokuda, H.: Japan. J. Applied Phys. 59 (2020) 084002.
2. Tapajna, M.: Crystals 10 (2020) 1153.
3. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.
4. Li, J.L.: Superlatt. Microst. 161 (2022) 107064.

Graff, A., Simon-Najasek, M., Altmann, F., Kuzmík, J., Gregušová, D., Haščík, Š., Jung, J., Baur, T., Grunenputt, J., and Blanck, H.: High resolution physical analysis of ohmic contact formation at GaN-HEMT devices, Microelectr. Reliab. 76-77 (2017) 338.

1. Zeng, F.: Electronics 7 (2018) 377.
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3. Hou, M.: Chinese Phys. B 28 (2019) 037302.
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6. Zhang, Z.J.: Adv. Electron. Mater. 8 (2022) 2101401.
7. Günes, B.: J. Phys. D 57 (2024) 405305.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., and Georgakilas, A.: Current conduction mechanism and electrical break-down in InN grown on GaN, Applied Phys. Lett. 110 (2017) 232103.

1. Shen, L.: Applied Surface Sci 476 (2019) 418.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

1. Huang, H.: J. Phys. D 51(2018) 345102.
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8. Low, R.S.: Applied Phys. Express 14 (2021) 031004.
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Ing. Kuzmík Ján, DrSc.