Ing. Kováčová Eva

Gál, N., Hrubčín, L., Šagátová, A., Vanko, G., Kováčová, E., and Zaťko, B.:  High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C, Applied Surface Sci 635 (2023) 157708.

1. Wang, Z.W.: Surface Coat. Technol. 484 (2024) 130798.
2. Bai, S.Y.: Applied Phys. Lett. 125 (2024) 061102.
3. Yan, Y.T.: Composit. B-Engn. 282 (2024) 111557.

Zaťko, B., Hrubčín, L., Boháček, P., Gurov, Y.B., Rozov, S.V., Evseev, S.A., Bulavin, M.V., Zamiatin, N.I., Kopylov, Y.A., Sekáčová, M., and Kováčová, E.: Spectrometric performance of 4H-SiC detectors after neutron irradiation, AIP Conf. Proc. 2778 (2023) 060012.

1. Long, Z.: Nuclear Instrum. Methods Phys. Res. A 1064 (2024) 169326.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
2. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
3. Akyol, F.: Mater. Sci Semicond. Process. 170 (2024) 107968.
4. Saquib, T.: J. Applied Phys. 135 (2024) 065701.
5. Hu, Y.: Mater. Sci Semicond. Process. 178 (2024) 108453.
6. Ferdous, N.: Sci Rep. 14 (2024) 12748.
7. Su, J.: J. Mater. Sci Technol. 210 (2025) 20.

Dvurečenskij, A., Cigáň, A., Lobotka, P., Radnóczi, G., Škrátek, M., Benyó, J., Kováčová, E., Majerová, M., , and Maňka, J.: Colloids of HEA nanoparticles in an imidazolium-based ionic liquid prepared by magnetron sputtering: Structural and magnetic properties,  J. Alloys Compounds 896 (2022) 163089.

1. Tan, M.: Crystals 12 (2022) 1828.
2. Feng, J.: Front. Bioengn. Biotechnol. 10 (2022) 977282.
3. Babu, S.M.: J. Molecul. Liquids 364 (2022) 119989.
4. Biliak, K.: Nanoscale Adv. 5 (2023) 955.

Šagátová, A., Zaťko, B., Kováčová, E., and Nečas, V.: Gamma spectrometry of different energies by radiation-degraded SI GaAs detectors, AIP Conf. Proc. 2411 (2021) 080013.

#       1. Saymbetov, A. K.: Phys. Sci Technol. 10 (2023) 19.

Šagátová, A., Kováčová, E., Novák, A., Fulöp, M., and Zaťko, B.: Current-voltage characterization of GaAs detectors and their holders irradiated by high-energy electrons, Applied Surface Sci 552 (2021) 149474.

1. Moloi, S.J.: J. Mater. Sci-Mater. Electron. 34 (2023) Iss. 24.

Šagátová, A., Kršjak, V., Sojak, S., Riabukhin, O., Kováčová, E., and Zaťko, B.: Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy, J. Instrum. 16 (2021) C12032.

1. Barthel, A.: J. Applied Phys. 132 (2022) 184501.
2. Vrban, B.: Europ. Phys. J.-Spec. Top. 232 (2023) SI1645.
3. Chia, J.Y.: J. Applied Phys. 135 (2024) 025701.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: Study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

1. Ozdemir, A.F.: Physica B 616 (2021) 413125.
2. Gullu, H.H.: J. Electron. Mater. 50 (2021) 7044.
3. Wang, X.: J. Semicond. 42 (2021) 112802.
4. Kacha, A.H.: Semiconductors 55 (2021) S54.
5. Gao, R.: Sensors Actuators A 333 (2022) 113241.
6. Li, X.X.: J. Mater. Res. Technol.-JMR&T 18 (2022) 2152.
7. Capan, I.: Electronics 11 (2022) 532.
8. Napoli, M.D.: Front. Phys. 10 (2022) 898833.
9. Bernat, R.: Materials 16 (2023) 2202.
10. Huang, Z.: J. Mater. Sci-Mater. Electron. 34 (2023) 1046.
11. Mandal, K.C.: IEEE Trans. Nuclear Sci 70 (2023) 823.
12. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.
13. Long, Z.: Nuclear Instr. Methods in Phys. Res. A 1056 (2023) 168585.
14. Capan, I.: Materials 17 (2024) 1147.
15. Liu, L.Y.: Sensors Actuators A 369 (2024) 115204.
16. He, X.Y.: Physica Scripta 99 (2024) 075943.
17. Feng, J.C.: Materials 17 (2024) 3657.

Huran, J., Balalykin, N.I., Sasinková, V., Kleinová, A., Nozdrin, M.A., Kobzev, A.P., and Kováčová, E.: Very thin N-doped nanostructured carbon films on quartz and sapphire substrate: Photoelectron emission properties, Thin Solid Films 709 (2020) 138200.

1. Bokov, D.O.: Molecul. Simul. 48 (2022) 438.

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023.

#     1. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.

Zaťko, B., Dubecký, F., Ryć, L., Šagátová, A., Sedlačková, K., Kováčová, E., and Nečas, V.:  The study of 4H-SiC alpha particle detectors with different Schottky contact metallization, AIP Conf. Proc. 1996 (2018) 020051.

1. Long, Z.: Nuclear Instr. Methods in Phys. Res. A 1056 (2023) 168585.
2. Long, Z.: Nuclear Instr. Methods in Phys. Res. A 1050 (2023) 168170.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. IEEE 2018. ISBN 978-1-5386-7488-8. P. 41-44.

1. Slavicek, T.: J. Instrument. 15 (2020) C01036.

Kunzo, P., Lobotka, P., and Kováčová, E.: Modification of polyaniline-based gas sensor by electrophoretic deposition of metal nanoparticles in ionic liquids, Key Engn. Mater. 654 (2015) 224-229.

1. Pandey, S.: J. Sci-Adv. Mater. Dev. 1 (2016) 431.

Kunzo, P., Lobotka, P., Kováčová, E., Chrisstopoulou, K., Papoutsakis, L., Anastasiadis, S., Križanová, Z., and Vávra, I.: Nanocomposites of polyaniline and titania nanoparticles for gas sensors. Phys. Status Solidi a 210 (2013) 2341-2347.

1. McNally, T.: Phys. Status Solidi A 210 (2013) 2249.
2. Li, X.: J. Alloys Compounds 645 (2015) 553.
3. Bandgar, D. K.: RSC Adv. 5 (2015) 68964.
4. Tsizh, B.: Molecular Crystals Liquid Crystals 639 (2016) 19.
#     5. Pang, Z.: Colloids Surfaces A 494 (2016) 248.
6. Liu, C.: Sensors Actuators B 246 (2017) 85.
7. Pandey, S.: J. Sci-Adv. Mater. Dev. 1 (2016) 431.
8. Jha, R.K.: New J. Chem. 42 (2018) 735.
9. Wang, S.: Nano Energy 51 (2018) 231.
10. Aksimentyeva, O.I.: Molecular Crystals Liquid Cryst. 670 (2018) SI3.
#   11. Tsizh, B.: Proc. UkrMiCo 2018, pp. 9047579.
12. Kulkarni, S. B.: Sensors Actuators B 288 (2019) 279.
13. Tsizh, B.: Sensors Actuators A 315 (2020) 112273.
14. Rasool, A.: J. Alloys Comp. 854 (2021) 156661.
15. Tsizh, B.: Molecul. Cryst. Liquid Cryst. 716 (2021) 112.
16. Li, X.L.: Mater. Sci Engn. B 271 (2021) 115272.
17. Horbenko, Y.: Acta Phys. Polonica A 141 (2022) 386.

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., and Kováčová, E.: Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307.

#   1. Wan, M.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.
2. Nguyen, B.: Indust. Engn. Chem. Res. 62 (2023) 9474.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., and Sekáčová, M.: Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties, J. Electr. Engn. 65 (2012) 333-335.

1. Gangopadhyay, U.: J. Renewable Sustainable Energy 5 (2013) 031607.
2. Ivashchenko, V.I.: Thin Solid Films 569 (2014) 57.
#   3. Kozak, A.O.: J. Nano- and Electron. Phys. 6 (2014) 04047.
4. Fainer, N. I.: J. Struct. Chem. 56 (2015) 163.
5. Fainer, N. I.: ECS J. Solid State Sci Technol. 4 (2015) SIN3153.
6. Haacke, M.: Europ. Phys. J.-Special Top. 224 (2015) 1935.
7. Porada, O. K.: J. Superhard Mater. 38 (2016) 263.
8. Khatami, Z.: Thin Solid Films 622 (2017) 1.
9. Fainer, N. I.: J. Struct. Chem. 58 (2017) 119.
10. Porada, O. K.: J. Nano- Electron. Phys. 9 (2017) 02022.
11. Fainer, N.I.: Glass Phys. Chem. 43 (2017) 410.
12. He, W.: J. Ceramic Soc Japan 126 (2018) 253.
13. Khatami, Z.: J. Luminesc.196 (2018) 504.
14. Khatami, Z.: ECS J. Solid State Sci Technol. 7 (2018) N7.
15. Fainer, N.I.: Glass Phys. Chem. 44 (2018) 607.
16. Porada, O. K.: J. Superhard Mater. 41 (2019) 32.
17. Sukach, A.V.: J. Non-Crystall. Solids 523 (2019) UNSP 119603.
18. Fainer, N.I.: J. Struct. Chem.‏ 61 (2020) 1865.
19. Ivashchenko, V.I.: Inter. J. Hydrogen Energy 47 (2022) 7263.
20. Sukach, A.V.:Mater. Sci Semicond. Process. 143(2022) 106515.
21. Kar, A.: Optical Mater. 155 (2024) 115795.

Kunzo, P., Lobotka, P., Micusik, M., and Kováčová, E.: Palladium-free hydrogen sensor based on oxygen-plasma-treated polyaniline thin film, Sensors Actuators B 171-172 (2012) 838-845.

1. Ouyang, Y.J.: Surface Engn. 29 (2013) 312.
2. Chen, C.: Electrochimica Acta 97 (2013) 112.
3. Ishpal, K.A.: J. Applied Phys. 113 (2013) 094504.
4. Seo, H.-K.: Talanta 104 (2013) 219.
5. Ciric-Marjanovic, G.: Synthetic Metals 177 (2013) 1.
6. Buzanovskii, V.A.: Instrum. Systems: Monitor., Control, Diagn. (2014) 28.
7. Sinha, M.: Mater. Res. Express 2 (2015) 076401.
8. Ameen, S.: In Advanced Functional Mater. Wiley 2015, ISBN: 978-111899897-7, pp. 3-57.
9. Puliyalil, H.: Frontiers Chem. Sci Engn. 10 (2016) 265.
10. Pandey, S.: J. Sci-Adv. Mater. Dev. 1 (2016) 431.
11. Kumar, L.: Sensors Actuators B 240 (2017) 408.
12. Rivera, M.: Materials 10 (2017) 986.
13. Rozemarie, M.L.: IOP Conf. Ser. 209 (2017) 012063.
14. Wang, S.: Applied Surface Sci 428 (2018) 1070.
15. Cvelbar, U.: Plasma Process. Polymer. 16 (2019) SIe1700228.
16. Bafandeh, N.: Polymer Bull. 77 (2020) 3697.
17. Nasresfahani, S.: Synthetic Metals 265 (2020) 116404.
18. Nami-Ana, S.F.: ACS Applied Mater. Interfaces 13 (2021) 39791.
19. Upadhye, D.S.: J. Mater. Sci-Mater. Electron. 33 (2022) 23016.
20. Jagtap, S.J. Macromolecul. Sci B 61 (2022) 942.

Lobotka, P., Kunzo, P., Kováčová, E., Vávra, I., Križanová, Z., Šmatko, V., Stejskal, J., Konyushenko, E., Omastová, M., Spitalsky, Z., Micusik, M., and Krupa, I.: Thin polyaniline and polyaniline/carbon nanocomposite films for gas sensing, Thin Solid Films 519 (2011) 4123-4127.

  1. Matejik, D.: Key Engn. Mater. 495 (2012) 83.
2. Sharma, A.L.: Polymer 51 (2012) 1382.
3. Wang, Y.: Applied Surface Sci 259 (2012) 486.
4. Kan, K.: Advan. Mater. Res. 554-556 (2012) 661.
5. Ghosh, P.: Smart Mater. Struct. 22 (2013) 035004.
6. Gu, Y.: Colloids Surfaces A 433 (2013) 166.
7. Ciric-Marjanovic, G.: Synthetic Metals 170 (2013) 31.
8. Singh, A.: RSC Adv. 3 (2013) 5506.
9. Yun, J.: J. Nanomater. (2013) 184345.
10. Mekki, A.: J. Colloid Interface Sci 418 (2014) 185.
11. Li, H.: J. Nanosci Nanotechnol. 14 (2014) 3087.
12. Merian, T.: Sensors Actuators B 203 (2014) 626.
13. Zhang, L.: Sensors Actuators B 216 (2015) 293.
14. Zhang, L.: Current Applied Phys. 15 (2015) 789.
15. Kaushik, A.: Chemical Rev. 115 (2015) 4571.
16. Sinha, M.: Mater. Research Express 2 (2015) 076401.
17. Jaisutti, R.: IEEE Sensors (2015) 1586.
18. Fennell, J.F.: Angewandte Chemie 55 (2016) 1266.
19. Liu, P.: J. Mater. Sci-Mater. in Electron. 27 (2016) 7776.
20. Bora, A.: Sensors Actuators B 253 (2017) 977.
21. Yoon, J.-W.: Lab on a Chip 17 (2017) 3537.
22. Mello, P.D.: Thin Solid Films 656 (2018) 14.
23. Tanguy, N.R.: Sensors Actuators B 257 (2018) 1044.
24. Her, S.-C.: J. Applied Biomater. Funct. Mater. 16 (2018) 10.
25. Zhao, T.: Nanotechnol. 29 (2018) 405504.
26. Saoudi, M.: Polymer Composites 40 (2019) SIE821.
27. Ansari, M.O.: Polymers Polymeric Comp.-Ref. Ser. (2019) 911.
28. Wong, Y.C.: J. Electrochem. Soc 167 (2019) 037503.
29. Ali, S.S.: Sensors Actuat. B‏ 320 (2020) 128364.
30. Taghizadeh, M.: Iran. J. Chem. Chem. Engn.-Inter. Eng. Ed. 39 (2020) 281.
31. Xuan, J.: RSC Adv. 10 (2020) 39786.
32. Matindoust, S.: React. Function. Polymers 165 (2021) 104962.
33. Saoudi, M.: Polymers 13 (2021 ) 2595.
34. Nahirniak, S.: Sensors 22 (2022) 972.
35. Pauly, A.: Polymers 14 (2022) 891.
#     36. Nellaiappan, S.: Engn. Mater. (2021) 159.
37. Majeed, A.H.H.: Inter. J. Polymer Sci 2022 (2022) 9047554.
38. Su, P.-G.: Analyt. Methods 14 (2022) 4113.
39. Mostafa, M.H.: Mater. Chem. Phys. 291 (2022) 126699.
40. Meroni, D.: Materials 16 (2023) 1304.
41. Pauly, A.: Polymers 14 (2022) 891.
42. Nahirniak, S.: Sensors 22 (2022) 972.

Lobotka, P., Lalinský, T., Španková, M., Vávra, I., Chromik, Š., Haščík, Š., Šmatko, V., Mozolová, Ž., Kováčová, E., Dérer, J., Gaži, Š., and Gierlowski, P.: Antenna-coupled uncooled THz microbolometer based on micromachined GaAs and LSMO thin film, IEEE Sensors (2008) 604-607.

1. Paul, N.: IEEE EDKCON 2018, p. 55.

Vávra, O., Gaži, Š., Vávra, I., Dérer, J., Kováčová, E., : High efficiency Andreev reflection observed in Nb/Fe0.5Si0.5/Nb Josephson junctions. Physica C 404 (2004) 395-399.

1. Balaev, D.A.: Phys. Solid State 48 (2006) 2046.
2. Zikic, R.: Phys. Rev. B 75 (2007) art. no. 100502(R).
3. Zikic, R.: Supercond. Sci Technol. 22 (2009) 075022.
4. Popovic, Z.: Phys. Rev. B 85 (2012) 174510.
5. Dalouji, V.: Optik 156 (2018) 338.
6. Gul, Z.: J. Phys. A 52 (2019) Iss. 1.
7. Lee, K.-H.: Nano Lett. 19 (2020) 8287.

Pištora, J., Yamaguchi, T., Vlček, J., Mistrík, J., Horie, M., Šmatko, V., Kováčová, E., Postava, K., Aoyama, M., : Spectral ellipsometry of binary optic gratings. Optica Applicata 33 (2003) 251-262, Proc. SPIE 5259 (2003) 415-422.

#      1. Jaroslav, V.: Proc.SPIE 5945 (2005) 59450A, pp. 1.

Kicin, S., Cambel, V., Kuliffayová, M., Gregušová, D., Kováčová, E., Novák, J., Kostič, I., Förster, A., :Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. J. Applied Physics 91 (2002) 878-880.

1. Deneke, C.: Physica E 23 (2004) 269.
2. Golod, S.V.: Thin Solid Films 489 (2005) 169.
3. Da Silva, F.C.S.: Applied Phys. Lett. 92 (2008) 142502.
4. Liang, Z.W.: J. Applied Phys. 108 (2010) 074313.
5. Nelson, G.T.: Solar Energy Mater. Solar Cells 242 (2022) 111757.

Cambel, V., Kicin, S., Kuliffayová, M., Kováčová, E., Novák, J., Kostič, I., Förster, A., : Preparation of patterned GaAs structures for MEMS and MOEMS. Materials Sci Engn. C 19 (2002) 161-165.

      1. Pirzada, D.: J. Applied Phys. 102 (2007) 013519.
*    2. Gopal, M.: PhD Thesis. Nat. Univ. Singapore 2008.
3. Jiang, S.: IEEE Sensors J. 16 (2016) 4816.

Vávra, O., Gaži, Š., Bydžovský, J., Dérer, J., Kováčová, E., Frait, Z., Marysko, M., Vávra, I., : Study of the proximity effect in the Nb′/FexSi1−x/Nb tunnel junctions. J. Magnetism Magnetic Mater. 240 (2002) 583-585.

      1. Halterman, K.: Phys. Rev. B 70 (2004) 104516.

Bydžovský, J., Vávra, I., Fröhlich, K., Polák, M., Šmatko, V., Kováčová, E., Paškevic, P., : Application of La1−xMnO3 giant magnetoresistance sensors for testing of high-TC superconducting tapes. Sensors & Actuators A 91 (2001) 21-25.

     1. Zou, G.: Materials Lett. 62 (2008) 1785.

Vávra, I., Bydžovský, J., Flachbart, K., Tejada, J., Kopera, Ľ., Kováčová, E., Temst, K., Bruynseraede, Y., :Fe/Cr sensor for the milliKelvin temperature range. Sensors & Actuators A 91 (2001) 177-179.

#     1. Al-Hawari, T.: Jordan J. Mechan. Industrial Engn. 5 (2011) 451.
#     2. Al-Hawari, T.: Inter. J. Computer Applic. Technol. 44 (2012) 198.

Šmatko, V., Hanic, F., Šouc, J., Kováčová, E., Štrbik, V., : Selective deposition of epitaxial ybco films on Al2O3 / CeO2 substrate and titanium oxide mask applicable for patterning of stable microbridges Supercond. Sci Technol. 11 (1998) 458.

     1. Stevens, C.J.: Supercond. Sci Technol. 13 (2000) L31.