Ing. Hrubčín Ladislav, CSc.

Gál, N., Hrubčín, L., Šagátová, A., Vanko, G., Kováčová, E., and Zaťko, B.:  High-resolution alpha-particle detector based on Schottky barrier 4H-SiC detector operated at elevated temperatures up to 500 °C, Applied Surface Sci 635 (2023) 157708.

1. Wang, Z.W.: Surface Coat. Technol. 484 (2024) 130798.
2. Bai, S.Y.: Applied Phys. Lett. 125 (2024) 061102.
3. Yan, Y.T.: Composit. B-Engn. 282 (2024) 111557.

Evseev, S.A., Chernyshev, B.A., Gurov, Y.B., Dovbnenko, M.S., Zamiatin, N.I., Kopylov, Y.A., Rozov, S.V., Sandukovsky, V.G., Hrubčín, L., and Zaťko, B.: Radiation damage of SiC detectors irradiated with Xe ions and neutrons, Phys. Atomic Nuclei 86 (2023) 841–844.

1. Zhang, C.L.: J. Radiation Res. Applied Sci 17 (2024) 100883.

Zaťko, B., Hrubčín, L., Boháček, P., Gurov, Y.B., Rozov, S.V., Evseev, S.A., Bulavin, M.V., Zamiatin, N.I., Kopylov, Y.A., Sekáčová, M., and Kováčová, E.: Spectrometric performance of 4H-SiC detectors after neutron irradiation, AIP Conf. Proc. 2778 (2023) 060012.

1. Long, Z.: Nuclear Instrum. Methods Phys. Res. A 1064 (2024) 169326.

Osvald, J., Hrubčín, L., and Zaťko, B.: Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes, Mater. Sci Semicond. Process. 140 (2022) 106413.

1. Deniz, AR.: J. Mater. Sci-Mater. Electr. ‏ 33 (2022) 26954.
2. Efeoglu, H.: J. Electron. Mater. 52 (2023) 1410.
3. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.
4. Deniz, A.R.: Microelectron. Reliab. 147 (2023) 115114.
5. Capan, I.: Materials 17 (2024) 1147.
6. Turut, A.: J. Vacuum Sci. Technol. B 42 (2024) 032201.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: Study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

1. Ozdemir, A.F.: Physica B 616 (2021) 413125.
2. Gullu, H.H.: J. Electron. Mater. 50 (2021) 7044.
3. Wang, X.: J. Semicond. 42 (2021) 112802.
4. Kacha, A.H.: Semiconductors 55 (2021) S54.
5. Gao, R.: Sensors Actuators A 333 (2022) 113241.
6. Li, X.X.: J. Mater. Res. Technol.-JMR&T 18 (2022) 2152.
7. Capan, I.: Electronics 11 (2022) 532.
8. Napoli, M.D.: Front. Phys. 10 (2022) 898833.
9. Bernat, R.: Materials 16 (2023) 2202.
10. Huang, Z.: J. Mater. Sci-Mater. Electron. 34 (2023) 1046.
11. Mandal, K.C.: IEEE Trans. Nuclear Sci 70 (2023) 823.
12. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.
13. Long, Z.: Nuclear Instr. Methods in Phys. Res. A 1056 (2023) 168585.
14. Capan, I.: Materials 17 (2024) 1147.
15. Liu, L.Y.: Sensors Actuators A 369 (2024) 115204.
16. He, X.Y.: Physica Scripta 99 (2024) 075943.
17. Feng, J.C.: Materials 17 (2024) 3657.

Osvald, J., Hrubčín, L., and Zaťko, B.: Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors, Applied Surface Sci 533 (2020) 147389.

1. Feng, B.Y.: Applied Phys. Lett. 118 (2021) 181602.
2. Ozdemir, A.F.: Physica B 616 (2021) 413125.
3. Huang, L.Q.: Japan. J. Applied Phys. 61 (2022) 014003.
4. Yan, Q.L.: Applied Phys. Lett. 120 (2022) 092106.
5. Duman, S.: Sensors Actuators A 338 (2022) 113457.
6. Mallik, G.: Optic. Mater. 144 (2023) 114306.
7. Hassanien, A.M.: Physica Scripta 99 (2024) 055532.

Hrubčín, L., Gurov, J.B., Zaťko, B., Boháček, P., Rozov, S.V., Rozov, I.E., Sandukovskij, V.G., a Skuratov, V.A.: The amplitude defect of SiC detectors during the recording of accelerated Xe ions, Yadernaya Fizika i Inzhiniring 10 (2019) no. 3, Phys. Atomic Nuclei 82 (2019) 1682-1685.

1. Gao, R.L.: IEEE Trans. Nuclear Sci 68 (2021) 1169.
2. Zhang, X.P.: J. Instrument. 18 (2023) P09038.

Hrubčín, L., Gurov, J.B., Zaťko, B., Ivanov, O.M., Mitrofanov, S.V., Rozov, S.V., Sandukovskij, V.G., Semin, V.A., and Skuratov, V.A.: A study of the radiation hardness of Si and SiC detectors using a Xe ion beam, Instrum. Experiment. Techn. 61 (2018) 769-771.

1. Kandlakunta, P.: Nuclear Instr. Methods in Phys. Res. A 953 (2020) 163110.
2. Gao, R.L.: Sensors Actuators A 333 (2022) 113241.
3. Tchamako, A.: IEEE Sensors J. 22 (2022) 2326.
4. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A 1027 (2022) 166330.
5. Zhang, L.L.: IEEE Sensors J. 23 (2023) 4302.

Hrubčín, L., Gurov, J.B., Zaťko, B., Mitrofanov, S.V. Rozov, S.V., Sedlačková, K., Sandukovskij, V.G. Semin, V.A., Nečas, V., and Skuratov, V.A.: Characteristics of Si and SiC detectors at registration of Xe ions, J. Instrument. 13 (2018) P11005.

1. Zhang, X.P.: J. Instrument. 18 (2023) P09038.
2. Liu, L.Y.: Sensors Actuators A 369 (2024) 115204.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.
4. Xie, X.-M.: Trans. Nonferr. Metals Soc China‏ 30 (2020)‏ 3058.
5. Jiang, L.: Nuclear Instr. Methods in Phys. Res. A 1048 (2023) 167917.
6. Chen, L.: Ceramics Inter. 50 (2024) 30560.

Huran,  J., Hrubčín, L., Boháček, P., Borzakov, S.B., Skuratov, V.A., Kobzev, A.P., Kleinová, A., and Sasinková, V.: The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology. In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. ISBN: 978-86-80300-01-6. P. 399-403.

1. Su, Q.: Acta Materialia 165 (2019) 587.

Harmatha, L., Mikolášek, M., Stuchlíková, Ľ., Kósa, A., Žiška, M., Hrubčín, L., and Skuratov, V.A.: Electrically active defects in solar cells based on amorphous silicon/crystalline silicon heterojunction after irradiation by heavy Xe ions, J. Electr. Engn. 66 (2015) 323-328.

1. Sanchez, Borja C.: Inter. Sci Conf. Electric Power Engn. 2017. P. 211.
2. Saly, V.: Renewable Energy Sources 2018, pp. 85.
#     3. Šály, V.: EEA Electrotehnica, Electronica, Automatica 3 (2018) 9.
4. Saly, V.: Inter. Sci Conf. Electric Power Engn. 2019,‏ pp. 183-187.
#       5. Ermachikhin, A.V.: Semicond. 54 (2020) 1254.

Gurov, J., Rozov, S., Sandukovskij, V., Jakušev, E., Hrubčín, L., and Zaťko, B.: Characteristics of silicon carbide detectors, Instrum. Experiment. Techn. 58 (2015) 22-24.

1. Torrisi, L.: J. Electronic Mater. 46 (2017) 4242.
2. Sciuto, A.: J. Electron. Mater. 46 (2017) 6403.
3. Rejhon, M.: Phys. Lett. A 405 (2021) 127433.4.
4. Fu, W.T.: AIP Adv. 12 (2022) no. 9.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., and Balalykin, N.: Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology, Phys. Status Solidi a 210 (2013) 2756-2761.

  1. Mutch, M.J.: Microelectron. Reliab. 63 (2016) 201.
2. Wei, J.: Ceramics Inter. 44 (2018) 20375.|
3. Su, Q.: Acta Materialia 165 (2019) 587.
#   4. Zhang, X.: In 4th ICREED 2021.

Dubecký, F., Betko, J., Morvic, M., Darmo, J., Bešše, I., Hrubčín, L., Benovič, M., Pelfer, P., Gombia, E., and Mosca, R.: Neutron irradiated undoped LEC SI GaAs: I. Galvanomagnetic, I-V, PC and alpha detection study. In: Gallium Arsenide Related Comp. 1995. Ed. P.G.Pelfer. Singapore: World Sci 1996. P. 152-157.

*    1. Nečas, V.: APCOM 1999. Liptovský Mikuláš: Military Acad. 1999. P. 134.
2. Islam, N.E.: Ultra-Wideband, Short-Pulse Electromagn. 5 (2002) 461.

Huran, J., Hrubčín, L., Kobzev, A., and Liday, J.: Properties of amorphous silicon carbide films prepared by PECVDtechnology Vaccum 47 (1996) 1223.

1. Mccurdy, P.R.: J. Vacuum Sci Technol. A 17 (1999) 2475.
2. Nainaparampil, J.J.: J. Vacuum Sci Technol. A 17 (1999) 909.
3. Kikuchi, N.: Surface Coatings Technol. 149 (2002) 76.
4. Melinon, P.: Phys. Rev. B 65 (2002) 125321.
5. An, Z.H.: J. Vacuum Sci Technol. B 21 (2003) 1375.
6. Bau, S.: Proc. 3rd World Conf. Photovoltaic Energy Conversion 2003. P. 1178.
7. An, Z.H.: Thin Solid Films 447 (2004) 153.
8. Poon, R.W.Y.: Biomaterials 26 (2005) 2265.
9. Lin, G.-R.: J. Electrochem. Soc. 159 (2012) K35.
10. Li, M.: Applied Surface Sci 258 (2012) 3074.
11. Lo, T.-C.: J. Non-Crystall. Solids 358 (2012) 2126.
12. Cheng, C.-H.: Optics InfoBase Conf. Papers 2014. OSA ISBN 155752999X.
13. Cheng, C.-H.: Sci Rep 5 (2015) 16463.
14. Cheng, C.-H.: J. Mater. Chem. C 3 (2015) 10164.
15. Wu, C.-L.: River Publ. Ser. Optics Photon. 1 (2016) 179.
16. Deku, F.: J. Biomed. Mater. Research B 107 (2019) 1654.
17. Hassan, S.: Carbon Lett. 33 (2023) 1171.

Hrubčín, L., Huran, J., Šándrik, R., Kobzev, A., and Shirokov, D.: Application of the ERD method for hydrogen determination in silicon (oxy)nitride thin films prepared by ECR plasma deposition Nuclear Instrum. Methods in Phys. Research B 85 (1994) 60.

1. Dreer, S.: Mikrochimica Acta 130 (1999) 281.
2. Dreer, S.: Pure Applied Chemis. 76 (2004) 1161.
3. Didyk, A.Yu.: Doklady Phys. 57 (2012) 7.
#    4. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 253.
#    5. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 186.
#    6. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 80.
#    7. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 86.
#    8. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 96.
#    9. Didyk, A.Y.: J. Surface Investigation 8 (2014) 814.
10. Didyk, A. Y.: J. Surface Investigation 9 (2015) 859.

Thurzo, I., Hrubčín, L., Bartoš, J., and Pinčík, E.: Current-voltage characteristics and charge dlts spectra of proton-bombarded schottky diodes on semiinsulating GaAs Nuclear Instrum. Methods in Phys. Research B 83 (1993) 145-152.

1. Jayavel, P.: Materials Sci Semicond. Process. 3 (2000) 195.
2. Jayavel, P.: Radiation Effects Defects in Solids 152 (2000) 39.
3. Jayavel, P.: Vacuum 57 (2000) 51.
4. Jayavel, P.: J. Crystal Growth 210 (2000) 268.
5. Singh, R.: Radiation Effects Defects in Solids 157 (2002) 367.
6. Jayavel, P.: Physica B 315 (2002) 88.
7. Cankaya, G.: Indian J. Pure Applied Phys. 41 (2003) 36.
8. Heredia-Avalos, S.: Nuclear Instrum. Methods in Phys. Res. B 230 (2005) 118.
9. Karatas, S.: Nuclear Instrum. Methods in Phys. Research A 566 (2006) 584.
10. Kumar, S.: Applied Surface Sci 254 (2008) 3277.
11. Aydogan, S.: Solid State Sci 13 (2011) 1369.

Adam, R., Štrbik, V., Beňačka, Š., Chromik, Š., Tomáš, P., Gaži, Š., Darula, M., Šmatko, V., Hrubčín, L., Hudek, P., Kostič, I., and Pinčík, E.: YBa2Cu3Ox step edge junctions on buffered substrates. In: EUCAS 93. Ed. H.C.Freyhardt. Oberursel: DGM, 1993. P. 1147.

*    1. Seidel, P.: Weak Superconductivity. Bratislava: IEE SAS 1994. P. 13.