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Babchenko, O., Remes, Z., Ižák, T., Rezek, B., Kromka, A., : Deposition of nanocrystalline diamond films on temperature sensitive substrates for infrared reflectance spectroscopy. Phys. Status Solidi B 248 (2011) 2736-2739. (Not IEE SAS).
Barančeková Husaníková, P., Kačmarčík, J., Cambel, V., Karapetrov, G., : Superconducting and normal state parameters of single crystal Cu0.10TiSe2. Solid State Comm. 151 (2011) 227-228.
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Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Nečas, V., Mudroň, J., : Technology and performance study of a two-line monolithic X- and \gamma -ray detection chip Based on Semi-Insulating GaAs. IEEE Trans. Nuclear Sci 58 (2011) 3354-3358.
Cambel, V., Gregušová, D., Eliáš, P., Fedor, J., Kostič, I., Maňka, J., Ballo, P., : Switching magnetization magnetic force microscopy – an alternative to conventional lift-mode MFM, J. Electr. Engn. 62 (2011) 37-43.
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Danilewsky, A., Wittge, J., Hess, A., Cröll, A., Allen, D., McNally, P., Vagovič, P., Rolo, T., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Garagorri, J., Elizalde, M., Fossati, M., Bowen, D., Tanner, B., : Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging. J. Crystal Growth 318 (2011) 1157.
Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Morvan, E., Dua, C., Sibboni, H., DiForte-Poisson, M., Kordoš, P., : Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes. J. Applied Phys. 109 (2011) 063711.
Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Baldini, M., Ryć, L., Zaťko, B., Nečas, V., : Characterization of epitaxial 4H-SiC as a material for spectrometric radiation detectors. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 240-243.
Eickelkamp, M., Weingarten, M., Khoshroo, R., Ketteniss, N., Behmenburg, H., Heuken, M., Donoval, D., Chvála, A., Kordoš, P., Kalisch, H., Vescan, A., : Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors. J. Applied Phys. 110 (2011) 084501. (VEGA 2/0098/09).
Eliáš, P., Kostič, I., Šoltýs, J., : Patterning of pyramidal recesses in (1 0 0)InP substrate. Microelectr. Engn. 88 (2011) 36-40. (VEGA 2/0081/09).
Feilhauer, J., Moško, M., : Quantum and Boltzmann transport in a quasi-one-dimensional wire with rough edges. Phys. Rev. B 83 (2011) 245328.
Feilhauer, J., Moško, M., : Conductance and persistent current in quasi-one-dimensional systems with grain boundaries: Effects of the strongly reflecting and columnar grains. Phys. Rev. B 84 (2011) 085454.
Fernandes, H., Gömöry, F., della Corte, A., Celentano, G., Šouc, J., Silva, C., Carvalho, I., Gomes, R., Di Zenobio, A., Messina, G., : Toroidal high temperature superconducting coils for ISTTOK. Fusion Engn. Design 86 (2011) 1458-1461.
Ferrari, C., Germini, F., Korytár, D., Mikulík, P., Peverini, L., : X-ray diffracted intensity for double-reflection channel-cut Ge monochromators at extremely asymmetric diffraction conditions. J. Applied Crystall. 44 (2011) 353-358.
Fröhlich, K., Fedor, J., Kostič, I., Maňka, J., Ballo, P., : Gadolinium scandate: next candidate for alternative gate dielelectric in CMOS technology?, J. Electr. Engn. 62 (2011) 54-56.
Fröhlich, K., Hudec, B., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Rammula, R., Vincze, A., : Low equivalent oxide thickness TiO2 based capacitors for DRAM applications, ECS Trans. 41 no. 2 (2011) 73.
Fröhlich, K., Hudec, B., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., Gaži, Š., : Post-deposition processing and oxygen content of TiO2-based capacitors. Microelectr. Engn. 88 (2011) 1525-1528. (APVV 0133-07).
Frolek, L., Šouc, J., : Measurement of AC transport current loss in different kinds of superconducting tapes and wires in liquid helium. Supercond. Sci Technol. 24 (2011) 105016.
Garcia-Barrientos, A., Palankovski, V., : Numerical simulations of space charge waves in InP films and microwave frequency conversion under negative differential conductivity. Applied Phys. Lett. 98 (2011) 072110. (Not IEE SAS).
Garcia-Barrientos, A., Palankovski, V., : Numerical simulation of amplification of space charge waves in n-InP films. Mater. Sci Engn. B 176 (2011) SI1368-1372. (Not IEE SAS).
Gendiar, A., Daniska, M., Lee, Y., Nishino, T., : Suppression of finite-size effects in one-dimensional correlated systems. Phys. Rev. A 83 (2011) 052118.
Gömöry, F., Šouc, J., Vojenčiak, M., : AC transport loss of coated conductors in anti-parallel arrangement. IEEE Trans. Applied Supercond. 21 (2011) 3307-3310.
Hasenöhrl, S., Eliáš, P., Vávra, I., Novotný, I., Kováč, J., Novák, J., : GaP/ZnO core-shell nanowires – growth and characterization. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 259-262.
Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., Šatka, A., : Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.
Hotový, I., Kostič, I., Haščík, Š., Řeháček, V., Liday, J., Sitter, H., : Development and fabrication of TiO2 tip arrays for gas sensing, J. Electrical Engn. 62 (2011) 363-366.
Hudec, B., Hušeková, K., Tarre, A., Han, J., Han, S., Rosová, A., Lee, W., Kasikov, A., Song, S., Aarik, J., Hwang, C., Fröhlich, K., : Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes. Microelectr. Engn. 88 (2011) 1514-1516. (CENTE II). (APVV 0133-07). (VEGA 2-0147-11).
Hudec, B., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., Fröhlich, K., : Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer. J. Vacuum Sci Technol. B 29 (2011) 01AC09. (APVV 0133-07). (VEGA 2/0031/08).
Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77. (APVV 0713-07).
Huran, J., Balalykin, N., Shirkov, G., Kobzev, A., Valovič, A., : Nanocrystalline diamond/amorphous composite carbon films prepared by plasma chemical vapor deposition Acta Technica 56 (2011) T278-T283. (APVV 0713-07).
Hušek, I., Kováč, P., Melišek, T., Kopera, Ľ., : Thermally stabilized MgB2 composite wires with different barriers. Cryogenics 51 (2011) 550-554. (APVV 0495-10). (VEGA 2/0037/09).
Iavarone, M., Karapetrov, G., Fedor, J., Rosenmann, D., : The spectroscopic signature of the Co magnetic state in CoxNbSe2 superconducting single crystals. Supercond. Sci Technol. 24 (2011) 024010.
Jakabovič, J., Vincze, A., Kováč, J., Srnánek, R., Kováč, J., Dobročka, E., Donoval, D., Heinemeyer, U., Schreiber, F., Machovic, V., Uherek, F., : Surface and interface analysis of iodine-doped pentacene structures for OTFTs, Surface Inteface Anal. 43 (2011) 518-521. (not IEE SAS).
Kalbacova, M., Broz, A., Kromka, A., Babchenko, O., Kalbac, M., : Controlled oxygen plasma treatment of single-walled carbon nanotube films improves osteoblastic cells attachment and enhances their proliferation. Carbon 49 (2011) 2926-2934. (Not IEE SAS).
Karapetrov, G., Belkin, A., Iavarone, M., Yefremenko, V., Pearson, J., Divan, R., Cambel, V., Novosad, V., : Dimensionality crossover in vortex dynamics of magnetically coupled F-S-F hybrids. Supercond. Sci Technol. 24 (2011) 024012.
Karapetrov, G., Belkin, A., Iavarone, M., Fedor, J., Novosad, V., Milošević, M., Peeters, F., : Anisotropy superconductivity and vortex dynamics in magnetically coupled F/S and F/S/F hybrids. J. Supercond. Novel Magn. 24 (2011) 905-910.
Killat, N., Ťapajna, M., Faqir, M., Palacios, T., Kuball, M., : Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier. Electronics Lett. 47 (2011) 405-U75. (not IEE SAS).
Kim, J., Kim, C., Patil, P., Kvitkovič, J., Pamidi, S., : Electrical characteristics of stacks of YBCO tapes in applied magnetic field. IEEE Trans. Applied Supercond. 21 (2011) 3230-3233.
Kim, J., Kim, C., Iyyani, G., Kvitkovič, J., Pamidi, S., : Transport AC loss measurements in superconducting coils. IEEE Trans. Applied Supercond. 21 (2011) 3269-3272.
Kováč, P., Hušek, I., Melišek, T., Kopera, Ľ., : Filamentary MgB2 wire twisted before and after heat treatment. Supercond. Sci Technol. 24 (2011) 115006.
Kováč, J., Šramatý, R., Chvála, A., Sibboni, H., Morvan, E., DiForte-Poisson, M., Donoval, D., Kordoš, P., : Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements. Applied Phys. Lett. 98 (2011) 162111.
Kováč, P., Hušek, I., Pachla, W., Kulczyk, M., Melišek, T., Dvorák, T., : As-deformed filament’s density and transport currents of MgB2/Ti/Glidcop wire. J. Alloys Compounds 509 (2011) 8783-8787. (APVV 0495-10).
Kováč, P., Martinez, E., Melišek, T., Kopera, Ľ., Hušek, I., : Stability of multi-core MgB2/Ti/Cu/SS wires. Cryogenics 51 (2011) 16-20.
Kováč, J., Brath, T., Novotný, I., Bruncko, J., Búc, D., Kadar, O., Hasenöhrl, S., Novák, J., : Growth and characterization of GaP/ZnO heterojunction properties. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 40-43.
Kováč, P., Hušek, I., Melišek, T., Kopera, Ľ., : Current densities of thin filament MgB2/Ti/GlidCop® wire. Supercond. Sci Technol. 24 (2011) 105006. (VEGA 2/0037/09).
Krawczyk, M., Mamica, S., Klos, J., Romero-Vivas, J., Mruczkiewicz, M., Barman, A., : Calculation of spin wave spectra in magnetic nanograins and patterned multilayers with perpendicular anisotropy. J. Applied Phys. 109 (2011) 113903. (Not IEE SAS).
Kromka, A., Babchenko, O., Ižák, T., Potocký, Š., Davydova, M., Neykova, N., Kozak, H., Remes, Z., Hruska, K., Rezek, B., : Pulsed linear antenna microwave plasma – a step ahead in large area material depositions and surface functionalization In: NANOCON 2011. P. 271-279. (Not IEE SAS).
Kuball, M., Ťapajna, M., Simms, R., Faqir, M., Mishra, U., : AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectr. Reliab. 51 (2011) 195.(not IEE SAS).
Kúdela, R., Gregušová, D., Ščepka, T., Eliáš, P., Gaži, Š., : MOVPE grown InGaP/(Al, Ga)As free standing structures. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 57-61.
Kulich, M., Kováč, P., Weber, H., Haessler, W., : SiC doped MgB2 wires in a Ti sheath prepared by stage formation. Supercond. Sci Technol. 24 (2011) 065025.
Kuzmík, J., Georgakilas, A., : Proposal of InN channel high electron-mobility transistors. IEEE Trans. Electron Dev. 58 (2011) 720.
Kuzmík, J., Bychikhin, S., Pogany, D., Pichonat, E., Lancry, O., Gaquiere, C., Tsiakatouras, G., Deligeorgis, G., Georgakilas, A., : Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. J. Applied Phys. 109 (2011) 086106.
Kvitkovič, J., Patil, P., Pamidi, S., Voccio, J., : Characterization of 2G superconductor magnetic shields at 40–77 K. IEEE Trans. Applied Supercond. 21 (2011) 1477-1480.
Lalinský, T., Hudek, P., Vanko, G., Choleva, P., Vallo, M., Matay, L., Kostič, I., Držík, M., : Micromachined pressure sensors based on AlGaN/GaN circular HEMT sensing devices In: 37th Inter. Conf. Micro Nano Engn. – MNE 2011. Berlin 2011..
Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I., : Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs. Microelectr. Engn. 88 (2011) 166-169.
Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M., : Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor. Sensors Actuators A 172 (2011) 386-391. (APVV 0655-07). (MORGaN). (VEGA-2-0163-09).
Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M., : Piezoelectric response of AlGaN/GaN-based circular-HEMT structures. Microelectr. Engn. 88 (2011) 2424-2426.
Lapin, J., Pelachová, T., Witusiewicz, V., Dobročka, E., : Effect of long-term ageing on microstructure stability and lattice parameters of coexisting phases in intermetallic Ti–46Al–8Ta alloy. Intermetallics 19 (2011) 121-124.
Lobotka, P., Kunzo, P., Kováčová, E., Vávra, I., Križanová, Z., Šmatko, V., Stejskal, J., Konyushenko, E., Omastová, M., Spitalsky, Z., Micusik, M., Krupa, I., : Thin polyaniline and polyaniline/carbon nanocomposite films for gas sensing. Thin Solid Films 519 (2011) 4123-4127. (APVV 0478-07).
Majoros, M., Sumption, M., Susner, M., Collings, E., Šouc, J., Gömöry, F., Vojenčiak, M., Fisher, L., Kalinov, A., Voloshin, I., : AC magnetization loss of a YBCO coated conductor measured uning three different techniques. IEEE Trans. Applied Supercond. 21 (2011) 3293-3296.
Mikolášek, M., Prusaková, L., Matay, L., Řeháček, V., Jakabovič, J., Vanko, G., Kotlár, M., Harmatha, L., : Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 184-187.
Mikula, M., Grančič, B., Roch, T., Plecenik, T., Vávra, I., Dobročka, E., Šatka, A., Buršíková, V., Držík, M., Zahoran, M., Plecenik, A., Kúš, P., : The influence of low-energy ion bombardment on the microstructure development and mechanical properties of TiBx coatings. Vacuum 85 (2011) 866-870.
Mikulics, M., Kordoš, P., Gregušová, D., Adam, R., Kočan, M., Wu, S., Zhang, J., Sobolewski, R., Grützmacher, D., Marso, M., : Monolithic integration of ultrafast photodetector and MESFET in the GaN material system. IEEE Photonics Technol. Lett. 23 (2011) 1189-1191.
Mitróová, Z., Tomašovičová, N., Timko, M., Koneracká, M., Kováč, J., Jadzyn, J., Vávra, I., Éber, N., Tóth-Katona, T., Beaugnon, E., Chaud, X., Kopčanský, P., : The sensitivity of liquid crystal doped with functionalized carbon nanotubes to external magnetic fields New J. Chem. 35 (2011) 1260-1264..
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Nemec, M., Benko, P., Neupauer, M., Čičo, K., Harmatha, L., Fröhlich, K., : Preparation and characterization of thin ZrO2 layers for gate insulation in MOSFET. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 98-101.
Novák, J., Vávra, I., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., Magen, C., : Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE. J. Crystal Growth 318 (2011) 576-579. (VEGA 2/0081/09).
Novák, J., Telek, P., Vávra, I., Hasenöhrl, S., Reiffers, M., : MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layer. J. Crystal Growth 315 (2011) 78-81. (VEGA 2/0081/09).
Nozdrin, M., Balalykin, N., Feschenko, A., Minashkin, V., Shirkov, G., Trubnikov, G., Gaži, Š., Huran, J., : Hollow photocathode prototype for e-gun. In: 10th Europ. Workshop on Beam Diagnostics and Instrument. for Particle Accelerators (DIPAC2011). Eds. M. Marx et al. Hamburg 2011. P. 242-244.
Ondic, L., Dohnalova, K., Ledinsky, M., Kromka, A., Babchenko, O., Rezek, B., : Effective extraction of photoluminescence from a diamond layer with a photonic crystal. ACS Nano 5 (2011) 346-350. (Not IEE SAS).
Ondic, L., Kusova, K., Cibulka, O., Pelant, I., Dohnalova, K., Rezek, B., Babchenko, O., Kromka, A., Ganesh, N., : Enhanced photoluminescence extraction efficiency from a diamond photonic crystal via leaky modes. New J. Phys. 13 (2011) 063005. (Not IEE SAS).
Ostermaier, C., Pozzovivo, G., Carlin, J., Basnar, B., Schrenk, W., Ahn, S., Detz, H., Klang, P., Andrews, A., Douvry, Y., Gaquiere, C., De Jaeger, J., Tóth, L., Pecz, B., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Kuzmík, J., : Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering, AIP Conf. Proc. 1399 (2011) 905-906.
Osvald, J., : Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures. J. Applied Phys. 110 (2011) 073702.
Osvald, J., : Possibility to detect deep levels in AlGaN/GaN heterostructures by C-V measurement. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 147-150.
Pardo, E., Vojenčiak, M., Gömöry, F., Šouc, J., : Low-magnetic-field dependence and anisotropy od the critical current density in coated conductors. Supercond. Sci Technol. 24 (2011) 065007.
Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., Fröhlich, K., : Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks. Applied Surface Sci 257 (2011) 7876-7880. (APVV 0133-07). (VEGA 2/0031/08).
Perný, M., Šály, V., Huran, J., : Electric and dielectric properties of amorphous silicon carbide thin films produced at high temperature. In: Proc. 26th Europ. Photovoltaic Solar Energy Conf. Eds. H. Ossenbrink et al. München: WIP 2011. ISBN 3-936338-27-2. P. 317-320.
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Perný, M., Šály, V., Váry, M., Huran, J., : Electrical structural properties of amorphous nitride-doped silicon carbide and its application for photovoltaics. In: 2nd Inter. Conf. Renewable Energy Sources. Eds. J. Cirák et al. Bratislava: STU 2011. ISBN 978-80-89402-38-0. P. 208-209.
Perný, M., Šály, V., Mikolášek, M., Huran, J., Országh, J., : Electronic and structural properties of amorphous N-doped silicone carbide. In: 34th ISSE. Eds. M.Franz et al. Piscataway: IEEE 2011. ISBN: 978-1-4577-2112-0. P. 212-215.
Pitel, J., Kováč, P., : On some consequences of an external magnetic field applied to HTS coils. Physica C 471 (2011) 1680-1688. (APVV 0495-10).
Polák, M., Demenčík, E., Hušek, I., Kopera, Ľ., Kováč, P., Mozola, P., Takács, S., : AC losses and transverse resistivity in filamentary MgB2 tape with Ti barriers. Physica C 471 (2011) 389-394. (VEGA 2/0037/09). (APVV 0398-07).
Prnová, A., Galušek, D., Hnatko, M., Kozánková, J., Vávra, I., : Composites with eutectic microstructure by hot pressing of Al2O3 – Y2O3 glass microspheres, Ceramics – Silikáty 55 (2011) 208-213.
Pudiš, D., Šušlik, Ľ., Škriniarová, J., Kováč, J., Martinček, I., Kováč, J., Haščík, Š., Kubicová, I., Novák, J., Veselý, M., : Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM. Optics Laser Technol. 43 (2011) 917-921.
Racko, J., Mikolášek, M., Harmatha, L., Breza, J., Hudec, B., Fröhlich, K., Aarik, J., Tarre, A., Granzner, R., Schwierz, F., : Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures. J. Vacuum Sci Technol. B 29 (2011) 01AC08.
Racko, J., Mikolášek, M., Granzner, R., Breza, J., Donoval, D., Grmanová, A., Harmatha, L., Schwierz, F., Fröhlich, K., : Trap-assisted tunnelling current in MIM structures. Central Europ. J. Phys. 9 (2011) 230-241.
Remes, Z., Babchenko, O., Neykova, N., Varga, M., : Photothermal spectroscopy of wide band gap nanocrystalline semiconductors In: NANOCON 2011. P. 719-725. (Not IEE SAS).
Remes, Z., Kozak, H., Babchenko, O., Potocký, Š., Ukraintsev, E., Rezek, B., Kromka, A., : Grazing angle reflectance spectroscopy of organic monolayers on nanocrystalline diamond films. Diamond Related Mater. 20 (2011) 882-885. (Not IEE SAS).
Rezek, B., Kratka, M., Ukraintsev, E., Babchenko, O., Kromka, A., Broz, A., Kalbacova, M., : Diamond as functional material for bioelectronics and biotechnology. In: New Perspectives in Biosensors Technology and Applications. InTech -Vienna: 2011. Chapter 8, pp. 176-196. (Not IEE SAS).
Rosová, A., Kováč, P., Hušek, I., Kopera, Ľ., : EDX and ion beam treatment studies of filamentary in situ MgB2 wires with Ti barrier. J. Alloys Compounds 509 (2011) 7961-7967. (VEGA 2/0037/09).
Rostila, L., Demenčík, E., Šouc, J., Brisigotti, S., Kováč, P., Polák, M., Grasso, G., Lyly, M., Stenvall, A., Tumino, A., Kopera, Ľ., : Magnesium diboride wires with nonmagnetic matrices – AC loss measurements and numerical calculations. IEEE Trans. Applied Supercond. 21 (2011) 3338-3341.
Rybár, J., Kosa, A., Dubecký, F., Petruš, M., Stuchlíková, Ľ., Benkovská, J., Harmatha, L., Hrkút, P., Baček, D., Kováč, P., : DLTS study of neutron bombarded silicon detector. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 192-195.
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