2008

Áč, V., Perichta, P., Korytár, D., Mikulík, P., : Thermal effects under synchrotron radiation power absorption. In: Modern Developments in X-Ray and Neutron Optics. Eds. A.Erko et al. Berlin: Springer 2008. ISBN: 978-3-540-74560-0. P. 513-524.

Belkin, A., Novosad, V., Iavarone, M., Fedor, J., Pearson, J., Petrean-Troncalli, A., Karapetrov, G., : Tunable transport in magnetically coupled MoGe/Permalloy hybrids. Applied Physics Lett. 93 (2008) 072510.

Benko, P., Ťapajna, M., Paskaleva, A., Atanassova, E., Fröhlich, K., : Measurement of electrical properties on MOS structure with Ta2O5 gate dielectric layer and Ru-based gate electrodes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 28-31.

Beňo, J., Weis, M., Dobročka, E., Haško, D., : Mixed 2D molecular systems: Mechanic, thermodynamic and dielectric properties. Applied Surface Sci 254 (2008) 6370-6375.

Boháček, P., Zaťko, B., Dubecký, F., Chromik, Š., Huran, J., Sekáčová, M., : Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 105-108. (APVV 51-0459-06). (VEGA 2/7170/27).

Boháček, P., Dubecký, F., Hubík, P., Zaťko, B., Chromik, Š., Sekáčová, M., : New kind of quasi-ohmic metallization in semi-insulating GaAs: Role in electrical charge transport. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 32-35.

Boháček, P., Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : PECVD silicon carbon nitrid thin films: properties. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 291-294.

Brunner, K., Kobayashi, H., Kučera, M., Takahashi, M., Jergel, M., Pinčík, E., : On the relation between structural and photoluminescence properties of passivated a-Si:H / glass samples Metallurg. Analysis 28 Suppl. 2 (2008) 1248-1253.

Cambel, V., Šoltýs, J., : Skenovacia sondová mikroskpia vo výskume povrchov materiálov. In: Rozprávanie o materiáloch. Bratislava: ÚMMS SAV, 2008. ISBN 978-80-970027-6-3. S. 81-92.

Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices. Ultramicroscopy 108 (2008) 1021-1024.

Čičo, K., Gregušová, D., Kuzmík, J., di Forte Poisson, M., Lalinský, T., Pogany, D., Delage, S., Fröhlich, K., : InAlN/GaN MOSHEMT with Al2O3 insulating film. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 87-91.

Donoval, D., Florovič, M., Gregušová, D., Kováč, J., Kordoš, P., : High-temperature performance of AlGaN/GaN HFETs and MOSHFETs. Microelectron. Reliab. 48 (2008) 1669.

Dubecký, F., Zaťko, B., Hubík, P., Boháček, P., Gombia, E., Chromik, Š., : Study of bulk semi-insulating GaAs radiation detectors: role of ohmic contact metallization in electrical charge transport and detection performance. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 295-298.

Dubecký, F., Ryć, L., Kaczmarczyk, J., Scholz, M., Zaťko, B., Boháček, P., Huran, J., Ladzianský, M., : Registration of fast netrons emission from hot plasmas by bulk semi-insulating GaAs detectors. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 299-302.

Džarová, A., Timko, M., Šprincová, A., Kopčanský, P., Kováč, J., Koneracká, M., Vaclaviková, M., Vávra, I., : Formation of magnetic properties of magnetosomes Mater. Struct. Chemistry, Biology, Phys. Technol. 15 (2008) 10.

Eliáš, P., Kostič, I., Kúdela, R., Novák, J., : Localised etching of (100) GaAs via an AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 303-306.

Feilhauer, J., Moško, M., : Persistent current in a disordered mesoscopic ring with many channels: Scattering-matrix based calculation. Physica E 40 (2008) 1582.

Florovič, M., Kordoš, P., Donoval, D., Gregušová, D., Kováč, J., : Performance of AlGaN/GaN heterostructure field – effect transistors at higher ambient temperatures. J. Electr. Engn. 59 (2008) 53-56.

Florovič, M., Kováč, J., Kordoš, P., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., Donoval, D., Uherek, F., : Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 103-106.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., Kordoš, P., Donoval, D., Uherek, F., : Electrical properties of Al0.3Ga0.7N/GaN heterostructure field effect transistor. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 61-64.

Fröhlich, K., : Ako polovodiče spôsobili informačnú revolúciu. In: Rozprávanie o materiáloch. Bratislava: ÚMMS SAV, 2008. ISBN 978-80-970027-6-3. S. 17-24.

Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., Aidla, A., : Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochem. Solid-State Lett. 11 (2008) G19-G21. (VEGA 2/0031/08).

Frolek, L., Gömöry, F., Seiler, E., : A special sample holder for AC susceptibility measurements of superconducting samples in high magnetic fields at various temperatures. Supercond. Sci Technol. 21 (2008) 105009. (APVV 51-045605).

Frolek, L., Oravec, J., Šouc, J., : Impulse measurement of dynamic current-voltage curves of superconducting tape at various lengths and shapes of current waves. J. Phys. – Conf. Series 97 (2008) 012085. (APVV 51-045605).

Gendiar, A., Krčmár, R., Ueda, H., Nishino, T., : Phase transition of clock models on a hyperbolic lattice studied by corner transfer matrix renormalization group method. Phys. Rev. E 77 (2008) art. no. 041123. (VEGA 2/6101/26).

Gömöry, F., Šouc, J., Seiler, E., Vojenčiak, M., Granados, X., : Modification of critical current in HTSC tape conductors by a ferromagnetic layer. J. Phys. – Conf. Series 97 (2008) 012096. (APVV 51-045605).

Gömöry, F., Vojenčiak, M., Šouc, J., Seiler, E., : Influence of ferromagnetic layer on critical current of a superconducting wire. Acta Physica Polonica 113 (2008) 605-608.

Gregor, M., Mičunek, R., Plecenik, T., Roch, T., Lugstein, A., Bertagnolli, E., Vávra, I., Štefečka, M., Kubinec, M., Leporis, M., Gašparík, V., Kúš, P., Plecenik, A., : Nano-bridges based on the superconducting MgB2 thin films. Physica C 468 (2008) 785-788.

Hasenöhrl, S., Kučera, M., Morvic, M., Novák, J., : OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 111-114.

Haščík, Š., Hotový, I., Lalinský, T., Vanko, G., Řeháček, V., Mozolová, Ž., : Preparation of thin GaAs suspended membranes for gas microsensors using plasma etching. Vacuum 82 (2008) 236-239.

Holúbek, T., Kováč, P., Hušek, I., : Relation between current transfer length and stability of Fe/ MgB2 and Fe/Nb/MgB2 conductors. Acta Physica Polonica A 113 (2008) 367-370.

Holúbek, T., Kováč, P., Takács, S., Hušek, I., Melišek, T., : Current sharing and the stability of composite MgB2 superconductors. Supercond. Sci Technol. 21 (2008) 065013. (APVV 0398-07).

Hotový, I., Řeháček, V., Mika, F., Lalinský, T., Haščík, Š., Vanko, G., Držík, M., : Gallium arsenide suspended microheater for MEMS sensor arrays Microsyst. Technol. 14 (2008) 629-635.

Hrabovcová, V., Rafajdus, P., Vojenčiak, M., Šušota, M., : Thermal analysis of superconducting traction transformer. In: Inter. Symp. Power Electronics, Electrical Drives, Automation and Motion, 2008 – SPEEDAM 2008. Piscataway: IEEE, 2008. P. 1223-1228. (APVV 51-045605).

Hudec, B., Ťapajna, M., Hušeková, K., Aarik, J., Aidla, A., Fröhlich, K., : Low equivalent oxide thickness metal/insulator/metal structures for DRAM applications. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 123-126.

Hulman, M., Haluška, M., Scalia, G., Obergfell, D., Roth, S., : Effects of charge impurities and laser energy on raman spectra of graphene. Nano Lett. 8 (2008) 3594–3597. (Not IEE SAS).

Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : Hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 127-130.

Hušek, I., Kováč, P., : Filament and interface structura of in-situ MgB2 wires. J. Phys. – Conf. Series 97 (2008) 012106.

Chromik, Š., Španková, M., Vávra, I., Liday, J., Vogrinčič, P., Lobotka, P., : Preparation and structural properties of MgO films grown on GaAs substrate. Applied Surface Sci 254 (2008) 3635-3637. (APVV 51-040605).

Chromik, Š., Sojková, M., Štrbik, V., Gaži, Š., Odier, P., Li, X., Xu, Y., Sobolewski, R., Hanic, F., Plesch, G., Beňačka, Š., : Hg-based cuprate superconducting films patterned into structures for ultrafast photodetectors. Applied Surface Sci 254 (2008) 3638-3641.

Indlekofer, K., Németh, R., Knoch, J., : Many-body approach to the terahertz response of Wigner molecules in gated nanowire structures. Phys.Rev. B 77 (2008) 125436.

Janovec, J., Dománková, M., Grgač, P., Gömöry, F., Kusý, M., : Progresívne materiály a technológie. Trnava: AlumniPress, 2008. 226 s. VŠ skriptá. ISBN 978-80-8096-076-6.(Not IEE SAS).

Kadlečíková, M., Breza, J., Jesenák, K., Pastorková, K., Luptáková, V., Kolmačka, M., Vojačková, A., Michalka, M., Vávra, I., Križanová, Z., : The growth of carbon nanotubes on montmorillonite and zeolite (clinoptilolite). Applied Surface Sci 254 (2008) 5073-5079.

Kopera, Ľ., Kováč, P., Melišek, T., : Electromechanical characterization of selected superconductors. Supercond. Sci Technol. 21 (2008) art. no. 115001. (APVV 0398-07).

Kopera, Ľ., Šmatko, V., Prusseit, W., Polák, M., Semerad, R., Štrbik, V., Šouc, J., : In situ patterning of filamentary YBCO coated conductors. Physica C 468 (2008) 2351-2355. (APVV 51-040605).

Kordoš, P., Donoval, D., Florovič, M., Kováč, J., Gregušová, D., : Investigation of trap effects in AlGaN/GaN field-effect transistors by temperature dependent threshold voltage analysis. Applied Phys. Lett. 92 (2008) 152113. (VEGA 2/6099/26).

Kordoš, P., Gregušová, D., Stoklas, R., Gaži, Š., Novák, J., : Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness,. Solid-State Electr. 52 (2008) 973-979. (VEGA 2/6099/26).

Kordoš, P., Florovič, M., Stoklas, R., Gregušová, D., Donoval, D., : Characterization of Al2O3/AlGaN/GaN MOSHFETs AND AlGaN/GaN HFET by measurements at elevated temperatures. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 109-112.

Korenko, M., Kucharík, M., Oboňa, J., Janičkovič, D., Córdoba, R., de Teresa, J., Kubíková, B., : Nanotubes made from deeply undercooled cryolite/alumina melts. Helvetica Chimica Acta 91 (2008) 1389-1399.

Korytár, D., Ferrari, C., Mikulík, P., Germini, F., Vagovič, P., Baumbach, T., : High resolution 1D and 2D crystal optics based on asymmetric diffractors. In: Modern Developments in X-Ray and Neutron Optics. Eds. A.Erko et al. Berlin: Springer 2008. ISBN: 978-3-540-74560-0. P. 501-512.

Kováč, P., Pachla, W., Hušek, I., Kulczyk, M., Melišek, T., Holúbek, T., Diduszko, R., Reissner, M., : Multicore MgB2 wires made by hydrostatic extrusion. Physica C 468 (2008) 2356- 2360. (APVV 0398-07).

Kováč, P., Hušek, I., Melišek, T., : MgB2 cable made from two-axially rolled wires. Supercond. Sci Technol. 21 (2008) 125003. (APVV 0398-07).

Kováč, P., Birajdar, B., Hušek, I., Holúbek, T., Eibl, O., : Stabilized in situ rectangular MgB2 wires: the effect of B purity and sheath materials. Supercond. Sci Technol. 21 (2008) 045011.

Kováč, P., Hušek, I., Dobročka, E., Melišek, T., Haessler, W., Herrmann, M., : MgB2 tapes made of mechanically alloyed precursor powder in different metallic sheaths. Supercond. Sci Technol. 21 (2008) 015004.

Kováč, P., : Supravodivé vláknité vodiče vytvárajúce silné magnetické polia. In: Rozprávanie o materiáloch. Bratislava: ÚMMS SAV, 2008. ISBN 978-80-970027-6-3. S. 107-116.

Krčmár, R., Iharagi, T., Gendiar, A., Nishino, T., : Tricritical point of the J1-J2 Ising model on a hyperbolic lattice. Phys. Rev. E 78 (2008) art. no. 061119.

Krčmár, R., Gendiar, A., Ueda, H., Nishino, T., : Ising model on a hyperbolic lattice studied by the corner transfer matrix renormalization group method. J. Phys. A 41 (2008) art. no. 125001. (VEGA 2/6101/26).

Krčmár, R., Gendiar, A., Moško, M., Németh, R., Vagner, P., Mitas, L., : Persistent current of correlated electrons in mesoscopic ring with impurity. Physica E 40 (2008) 1507-1509. (VEGA 2/6101/26).

Kuzmík, J., Pozzovivo, G., Abermann, S., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Bertagnolli, E., Strasser, G., Pogany, D., : Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2. IEEE Trans Electron Devices 55 (2008) 937-941.

Kuzmík, J., : Advances and prospects of InAlN/GaN HEMTs. In: 17th Inter. Workshop Heterostruct. Technol. Ed. G. Meneghesso. Venice 2008. P. 141-144.

Kvitkovič, J., Polák, M., Mozola, P., : Distribution of magnetic field inside the winding of a BSCCO coil. IEEE Trans. Applied Supercond. 18 (2008) 1621-1624. (APVV 51-002305).

Ladzianský, M., Šagátová, A., Dubecký, F., Nečas, V., : Changes in deep level states of neutron damaged Semi-insulating GaAs detectors. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 125-128.

Lalinský, T., Vanko, G., : Advanced microelectronic and micro-electro-mechanical structures based on AlGaN/GaN material systems. In: Vzájomná spolupráca pracovísk = kvalitný výskum, Zamerané na vákuové technológie. Škola vákuovej techniky. Bratislava: Slov. vákuová spoločnosť, 2008. ISBN 978-80-969435-4-8. P. 64-69.

Lalinský, T., Rufer, L., Vanko, G., Rýger, I., Haščík, Š., Tomáška, M., Mozolová, Ž., Vincze, A., : Surface acoustic wave excitation on SF6 plasma treated AlGaN/GaN heterostructure. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 311-314.

Lalinský, T., Rufer, L., Vanko, G., Mir, S., Haščík, Š., Mozolová, Ž., Vincze, A., Uherek, F., : AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors. Applied Surface Sci 255 (2008) 712-714.

Lalinský, T., Držík, M., Jakovenko, J., Vanko, G., Mozolová, Ž., Haščík, Š., Chlpík, J., Hotový, I., Řeháček, V., Kostič, I., Matay, L., Husák, M., : GaAs based micromachined thermal converter for gas sensors. Sensors Actuators A 142 (2008) 147-152. (VEGA 2/6097/26).

Liday, J., Hotový, I., Sitter, H., Vogrinčič, P., Vincze, A., Vávra, I., Šatka, A., Ecke, G., Bonanni, A., Breza, J., Simbrunner, C., Plochberger, B., : Investigation of NiO x -based contacts on p-GaN. J. Materials Sci – Mater. Electr. 19 (2008) 855-862.

Malliakas, C., Iavarone, M., Fedor, J., Kanatzidis, M., : Coexistence and Coupling of Two Distinct Charge Density Waves in Sm2Te5 J. Am. Chem. Soc. 130 (2008) 3310–3312. (Not IEE SAS).

Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., : Sub-micron Hall probes prepared by tip-induced local anodic oxidation. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 195-198.

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : New approach to local anodic oxidation of semiconductor heterostructures. Ultramicroscopy 108 (2008) 1086-1089.

Mikula, M., Grančič, B., Vávra, I., Šatka, A., Buršíková, V., Plecenik, A., Kúš, P., : TiB2 vrstvy pripraveneé dc magnetrrónovým naprašovaním. In: Vzájomná spolupráca pracovísk = kvalitný výskum, zamerané na vákuové technológie. Bratislava: Slov. vákuová spol., 2008. ISBN 978-80-969435-4-8. S. 108-112.

Mikulics, M., Marso, M., Wu, S., Fox, A., Lepsa, M., Grützmacher, D., Sobolewski, R., Kordoš, P., : Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts. IEEE Photon. Technol. Lett. 20 (2008) 1054.

Mošková, A., Moško, M., Gendiar, A., : Possible persistent current in a ring made of the perfect crystalline insulator. Physica E 40 (2008) 1991-1993.

Németh, R., Moško, M., : One-dimensional ring with Kronig–Penney periodic potential: Persistent currents at full filling. Physica E 40 (2008) 1498.

Novák, J., Eliáš, P., Šoltýs, J., Hasenöhrl, S., Vávra, I., : InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 219-222.

Novák, J., Vávra, I., Hasenöhrl, S., Šoltýs, J., Štrichovanec, P., Balazsi, K., : Influence of GaAs cap layer on the relaxation of InMnAs dots. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 171-174.

Orlický, O., Funaki, M., Dobročka, E., : Magnetomineralogical and the domain structure observations of the low-temperature oxidized titanomagnetite bearing basalts from southern Slovakia, Contrib. Geophys. Geodesy. Spec. Iss. 38 (2008) 89.

Osvald, J., : Numerical analysis of gate leakage current in AlGaN Schottky diodes. Applied Surface Sci 255 (2008) 793-795.

Osvald, J., : Temperature dependence of ideality factor of inhomogeneous Schottky diodes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 175-178.

Osvald, J., : Simulation of influence of AlGaN/GaN heterojunction parameters on its capacitance curves. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 319-322.

Pardo, E., : Modeling of coated conductor pancake coils with a large number of turns. Supercond. Sci Technol. 21 (2008) 065014.

Paskaleva, A., Ťapajna, M., Atanassova, E., Fröhlich, K., Vincze, A., Dobročka, E., : Effect of Ti doping on Ta2O5 stacks with Ru and Al gates. Applied Surface Sci 254 (2008) 5879-5885.

Pinčík, E., Brunner, K., Kobayashi, H., Takahashi, M., Kučera, M., : Photoluminescence of very thin oxide/a-Si:H structures passivated in HCN solutions. Applied Surface Sci 254 (2008) 3710-3714.

Pinčík, E., Kobayashi, H., Brunner, K., Takahashi, M., Kučera, M., Rusnák, J., Jergel, M., : Electrical, optical and structural properties of different si-based structures prepared on a-Si:H/c-Si, porous Silicon/c-Si, and c-Si Metallurg. Analysis 28 Suppl. 2 (2008) 1229-1237.

Plank, W., Hulman, M., Kuzmany, H., Kock, A., Roppert, K., Kukovecz, A., Krenn, J., Bischof, R., : Surface enhanced Raman spectroscopy of the liquid crystal 8CB using chip structures. Phys. Status Solidi B 245 (2008) 2193–2196. (Not IEE SAS).

Polák, M., Barnes, P., Kvitkovič, J., Levin, G., Mozola, P., Ušák, P., : Properties of an experimental coil wound with YBCO coated conductor carrying an AC current with frequencies up to 864 Hz. IEEE Trans. Applied Supercond. 18 (2008) 1240-1244.

Pozzovivo, G., Kuzmík, J., Golka, K., Čičo, K., Fröhlich, K., Carlin, J., Gonschorek, M., Grandjean, N., Schrenk, W., Strasser, G., Pogany, D., : Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD. Physica Status Solidi c 5 (2008) 1956-1958.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Juráš, V., : Experiments with application of image reconstruction method based on perspective imaging techniques x-ray CT mini system. In: IWSSIP 2008. Eds. G. Rozinaj et al. Bratislava: FEI STU 2008. P. 33-36.

Rafajdus, P., Hrabovcová, V., Šušota, M., Vojenčiak, M., : Design of superconducting traction transformer and its thermal analysis. In: 18th Inter. Conf. on Electr. Machines 2008 – ICEM 2008. Piscataway: IEEE, 2008. P. 1-6. (APVV 51-045605).

Ryć, L., Dobrzański, L., Dubecký, F., Kaczmarczyk, J., Pfeifer, M., Riesz, F., Słysz, W., Surma, B., : Application of MSM InP detectors to the measurement of pulsed X-ray radiation. Radiation Effects Defects in Solids 163 (2008) 559-567.

Seiler, E., Frolek, L., : AC susceptibility of the YBa2Cu3O7 coated conductor in high magnetic fields. Acta Physica Polonica 113 (2008) 379-382. .

Seiler, E., Frolek, L., : AC loss of the YBCO coated conductor in high magnetic fields. J. Phys. – Conf. Series 97 (2008) 012028. .

Schlosser, P., Vargova, M., Kubinec, M., Haščík, Š., Roch, T., Plecenik, A., Plesch, G., Hotový, I., : Preparation of micromaschined Gas sensor on thin membranes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 199-200.

Sojková, M., : Diamanty. In: Rozprávanie o materiáloch. Bratislava: ÚMMS SAV, 2008. ISBN 978-80-970027-6-3. S. 99-106.

Srnánek, R., Kováč, J., Jakabovič, J., Kováč, J., Irmer, G., Dobročka, E., Haško, D., : Characterization of organic field effect transistor structures by micro-Raman. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 255-258.

Srnánek, R., Irmer, G., Donoval, D., Osvald, J., McPhail, D., Christoffi, A., Sciana, B., Radziewicz, D., Tlaczala, M., : Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures. Microelectr. J. 39 (2008) 1439-1443.

Stoklas, R., Gregušová, D., Novák, J., Vescan, A., Kordoš, P., : Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis. Applied Phys. Lett. 93 (2008) 124103.

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